CN105283948A - 底部填充材料以及采用底部填充材料的半导体装置的制造方法 - Google Patents

底部填充材料以及采用底部填充材料的半导体装置的制造方法 Download PDF

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CN105283948A
CN105283948A CN201480002131.1A CN201480002131A CN105283948A CN 105283948 A CN105283948 A CN 105283948A CN 201480002131 A CN201480002131 A CN 201480002131A CN 105283948 A CN105283948 A CN 105283948A
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underfill
electrode
epoxy resin
resin
angular frequency
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CN201480002131.1A
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CN105283948B (zh
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小山太一
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Dexerials Corp
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Dexerials Corp
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    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C08G59/4215—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof cycloaliphatic
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    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Organic Chemistry (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Wire Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Adhesive Tapes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

提供一种能够实现无空隙安装及良好的焊料接合性的底部填充材料以及使用该底部填充材料的半导体装置的制造方法。采用一种底部填充材料，其含有环氧树脂、酸酐、丙烯树脂和有机过氧化物，在60℃以上100℃以下的任意温度，显示非宾厄姆流动性，动态粘弹性测定中的储存弹性率G’在10E＋02rad/s以下的角频率区域具有拐点，该拐点以下的角频率中的储存弹性率G’为10E＋05Pa以上10E＋06Pa以下。由此，能够实现无空隙安装及良好的焊料接合性。

Description

底部填充材料以及采用底部填充材料的半导体装置的制造方法
技术领域
本发明涉及用于半导体芯片的安装的底部填充材料以及采用该底部填充材料的半导体装置的制造方法。本申请以在日本于2013年9月11日申请的日本专利申请号特愿2013－187980为基础主张优先权，通过参照该申请，引用到本申请。
背景技术
近年来，在半导体芯片的安装方法中，以工序缩短为目的，研究在半导体IC（IntegratedCircuit，集成电路）电极上粘贴底部填充膜的“预供给型底部填充膜（PUF：Pre－appliedUnderfillFilm）”的使用。
使用该预供给型底部填充膜的安装方法，例如，如以下那样进行（例如，参照专利文献1。）。
工序A：向晶圆粘贴底部填充膜，并切片而得到半导体芯片。
工序B：在贴合底部填充膜的状态下，使半导体芯片对位而搭载。
工序C：将半导体芯片热压接，通过焊料凸点的金属结合进行导通确保，并且通过底部填充膜的硬化进行粘接。
预供给型底部填充膜以预先层压在晶圆的状态下使用，因此对于向基板的安装，为了实现良好的焊料连接性，熔化粘度被设定得低。例如，大多将储存弹性率G’设定为10E＋04Pa以下、损耗弹性率G”设定为10E＋03Pa左右，而且熔化状态的流动性未显示非宾厄姆流动性，因此安装时空气的排除不充分，成为内有空隙的安装体。
现有技术文献
专利文献
专利文献1：日本特开2005－28734号公报。
发明内容
发明要解决的课题
本发明鉴于这样的以往情况而提出，提供能够实现无空隙安装及良好的焊料接合性的底部填充材料，以及使用该底部填充材料的半导体装置的制造方法。
用于解决课题的方案
为了解决上述的课题，本发明是一种底部填充材料，在将形成带焊料的电极的半导体芯片搭载于形成与带焊料的电极对置的对置电极的电子部件之前，预先贴合在半导体芯片，其特征在于，含有环氧树脂、酸酐、丙烯树脂和有机过氧化物，在60℃以上100℃以下的任意温度下，显示非宾厄姆流动性，动态粘弹性测定中的储存弹性率G’在10E＋02rad/s以下的角频率区域具有拐点，该拐点以下的角频率中的储存弹性率G’为10E＋05Pa以上10E＋06Pa以下。
另外，本发明所涉及的半导体装置的制造方法，其特征在于，包括：搭载工序，将形成有带焊料的电极并且在该电极面贴合底部填充材料的半导体芯片，搭载于形成有与所述带焊料的电极对置的对置电极的电子部件；以及热压接工序，将所述半导体芯片和所述电子部件热压接，所述底部填充材料含有环氧树脂、酸酐、丙烯树脂和有机过氧化物，在60℃以上100℃以下的任意温度下，显示非宾厄姆流动性，动态粘弹性测定中的储存弹性率G’在10E＋02rad/s以下的角频率区域具有拐点，该拐点以下的角频率中的储存弹性率G’为10E＋05Pa以上10E＋06Pa以下。
发明效果
依据本发明，由于在熔化时显示非宾厄姆流动性，并且具有既定储存弹性率G’，所以能够实现无空隙安装及良好的焊料接合性。
附图说明
图1是示意性示出搭载前的半导体芯片和电路基板的截面图。
图2是示意性示出搭载时的半导体芯片和电路基板的截面图。
图3是示意性示出热压接后的半导体芯片和电路基板的截面图。
图4是示出熔化状态的主曲线的一个例子的图表。
图5是示出本实施方式中的半导体装置的制造方法的流程图。
图6是示意性示出在晶圆上粘贴底部填充膜的工序的立体图。
图7是示意性示出将晶圆切片的工序的立体图。
图8是示意性示出拾取半导体芯片的工序的立体图。
具体实施方式
以下，按照下述顺序对本发明的实施方式进行详细说明。
1.底部填充材料；
2.半导体装置的制造方法；
3.实施例。
＜1.底部填充材料＞
本实施方式所涉及的底部填充材料，在将形成有带焊料的电极的半导体芯片搭载于形成有与带焊料的电极对置的对置电极的电子部件之前，预先贴合在半导体芯片。
图1是示意性示出搭载前的半导体芯片和电路基板的截面图，图2是示意性示出搭载时的半导体芯片和电路基板的截面图，以及图3是示意性示出热压接后的半导体芯片和电路基板的截面图。
如图1～图3所示，本实施方式中的底部填充材料20预先贴合在形成有带焊料的电极的半导体芯片10的电极面而使用，通过底部填充材料20硬化后的粘接层21，接合半导体芯片10和形成与带焊料的电极对置的对置电极的电路基板30。
半导体芯片10在硅等半导体11表面形成有集成电路，具有称为凸点的连接用的带焊料的电极。带焊料的电极是在由铜等构成的电极12上接合了焊料13，具有合计电极12的厚度和焊料13的厚度的厚度。
作为焊料，能够使用Sn－37Pb共晶焊料（熔点183℃）、Sn－Bi焊料（熔点139℃）、Sn－3.5Ag（熔点221℃）、Sn－3.0Ag－0.5Cu（熔点217℃）、Sn－5.0Sb（熔点240℃）等。
电路基板30在例如刚性基板、柔性基板等基体材料31形成有电路。另外，在搭载半导体芯片10的安装部中，在半导体芯片10的与带焊料的电极对置的位置形成有具有既定厚度的对置电极32。
底部填充材料20含有膜形成树脂、环氧树脂、酸酐、丙烯树脂和有机过氧化物。
膜形成树脂相当于重量平均分子量为10×104以上的高分子量树脂，从膜形成性的观点来看，优选为10×104～100×104的重量平均分子量。作为膜形成树脂，能够使用丙烯酸酯橡胶聚合物、苯氧基树脂、环氧树脂、改性环氧树脂、尿烷树脂等各种树脂。这些膜形成树脂可以单独使用1种，也可以组合使用2种以上。这些之中，出于膜强度及粘接性的观点，在本实施方式中，适合使用具有缩水甘油基的丙烯酸酯橡胶聚合物。另外，丙烯酸酯橡胶聚合物的玻化温度Tg优选为－30℃以上20℃以下。由此，能够提高底部填充材料20的挠性。
作为环氧树脂，能够举出例如四对（缩水甘油基氧基苯基）乙烷、四对（缩水甘油基氧基甲基苯基）乙烷、四对（缩水甘油基氧基苯基）甲烷、三对（缩水甘油基氧基苯基）乙烷、三对（缩水甘油基氧基苯基）甲烷等缩水甘油基醚型环氧树脂；双环戊二烯型环氧树脂；缩水甘油胺型环氧树脂；双酚A型环氧树脂；双酚F型环氧树脂；双酚S型环氧树脂；螺环型环氧树脂；萘型环氧树脂；联苯型环氧树脂；萜烯型环氧树脂；四溴双酚A型环氧树脂；邻甲酚醛型环氧树脂；苯酚酚醛型环氧树脂；α－萘酚酚醛型环氧树脂；溴化苯酚酚醛型环氧树脂等。这些环氧树脂可以单独使用1种，也可以组合使用2种以上。这些之中，出于高粘接性、耐热性的观点，在本实施方式中，优选使用缩水甘油基醚型环氧树脂。
酸酐具有除去焊料表面的氧化膜的焊剂功能，因此能够得到优异的连接可靠性。作为酸酐，能够举出例如六氢邻苯二甲酸酐、甲基四氢苯酐等的脂环式酸酐；十二烯基丁二酸酐（テトラプロペニル無水コハク酸）、十二碳烯基丁二酸酐（ドデセニル無水コハク酸）等脂肪族酸酐；邻苯二甲酸酐、偏苯三酸酐、均苯四酸二酐等芳香族酸酐等。这些环氧硬化剂可以单独使用1种，也可以组合使用2种以上。出于焊料连接性的观点，在这些环氧硬化剂之中也优选使用脂环式酸酐。
另外，优选添加硬化促进剂。作为硬化促进剂的具体例，可举出1，8－二氮杂环（5，4，0）十一烯－7盐（DBU盐）、2－甲基咪唑、2－乙基咪唑、2－乙基－4－甲基咪唑等的咪唑类；2－（二甲胺基甲基）苯酚等的叔胺类；三苯基膦等膦类；辛酸锡等金属化合物等。
作为丙烯树脂，能够使用单官能（甲基）丙烯酸酯、2官能以上的（甲基）丙烯酸酯。作为单官能（甲基）丙烯酸酯，能举出甲基（甲基）丙烯酸酯、乙基（甲基）丙烯酸酯、n－丙基（甲基）丙烯酸酯、i－丙基（甲基）丙烯酸酯、n－丁基（甲基）丙烯酸酯等。作为2官能以上的（甲基）丙烯酸酯，能够举出芴类丙烯酸酯、双酚F－EO改性二（甲基）丙烯酸酯、双酚A－EO改性二（甲基）丙烯酸酯、三羟甲基丙烷PO改性（甲基）丙烯酸酯、多官能尿烷（甲基）丙烯酸酯等。这些丙烯树脂可以单独使用，也可以组合使用2种以上。这些之中，本实施方式适合使用芴类丙烯酸酯。
作为有机过氧化物，能够举出例如过氧缩酮、过氧酯、氢过氧化物、二烷基过氧化物、二酰基过氧化物、过氧化二碳酸酯等。这些有机过氧化物可以单独使用，也可以组合使用2种以上。这些之中，本实施方式适合使用过氧缩酮。
另外，作为其他的添加组合物，优选含有无机填充剂。通过含有无机填充剂，能够调整压接时的树脂层的流动性。作为无机填充剂，能够使用硅石、滑石、氧化钛、碳酸钙、氧化镁等。
进而，根据需要，也可以添加环氧类、胺类、巯基/硫化物类、酰脲类等硅烷偶联剂。
通过并用这样硬化反应比较慢的环氧类和硬化反应比较快的丙烯类，能够实现无空隙安装及良好的焊料接合性。
另外，底部填充材料在60℃以上100℃以下的任意温度中，示出表示如果不提供某一固定以上的应力（屈服应力）就不会引起流动的举动的非宾厄姆流动性。例如，从动态粘弹性测定中的动态粘性率η’相对于角频率以10的一次方的斜率反比例的关系，能够知道非宾厄姆流动性。
图4是示出动态粘弹性测定的熔化状态的主曲线的一个例子的图表。关于底部填充材料，在图4所示的主曲线中，储存弹性率G’在10E＋02rad/s以下的角频率区域具有拐点，拐点以下的角频率中的储存弹性率G’在10E＋05Pa以上10E＋06Pa以下的范围成为恒定值。由此，能够实现无空隙安装及良好的焊料接合性。
另外，丙烯树脂和有机过氧化物的总质量与环氧树脂和酸酐的总质量之比，优选为7：3～4：6。由此，能够得到实现无空隙安装及良好的焊料接合性的底部填充材料。
接着，对前述的底部填充材料以膜状形成的预供给型底部填充膜的制造方法进行说明。首先，使包含膜形成树脂、环氧树脂、酸酐、丙烯树脂和有机过氧化物的粘接剂组合物溶解到溶剂中。作为溶剂，能够使用甲苯、醋酸乙酯等，或者这些的混合溶剂。在调整树脂组合物后，利用棒涂机、涂敷装置等涂敷到剥离基体材料上。
剥离基体材料例如由将硅酮等的剥离剂涂敷在PET（聚对苯二甲酸乙二醇酯：PolyEthyleneTerephthalate）、OPP（定向聚丙烯：OrientedPolypropylene）、PMP（聚4－甲基戊烯－1：Poly－4－methylpentene－1）、PTFE（聚四氟乙烯：Polytetrafluoroethylene）等的层叠构造构成，防止组合物的干燥，并且维持组合物的形状。
接着，利用热烘箱、加热干燥装置等，使涂敷在剥离基体材料上的树脂组合物干燥。由此，能够得到既定厚度的预供给型底部填充膜。
＜2.半导体装置的制造方法＞
接着，对使用前述的预供给型底部填充膜的半导体装置的制造方法进行说明。
图5是示出本实施方式中的半导体装置的制造方法的流程图。如图5所示，本实施方式中的半导体装置的制造方法包括：底部填充膜粘贴工序S1；切片工序S2；半导体芯片搭载工序S3；以及热压接工序S4。
图6是示意性示出向晶圆上粘贴底部填充膜的工序的立体图。如图6所示，在底部填充膜粘贴工序S1中，利用具有直径比晶圆1的直径大的环状或框状的框架的夹具3，固定晶圆1，在晶圆1上粘贴底部填充膜2。底部填充膜2在将晶圆1切片时保护并固定晶圆1，在拾取时作为保持的切片带起作用。此外，对晶圆1制作多个IC（IntegratedCircuit），在晶圆1的粘接面，如图1所示按照由划线区分的每个半导体芯片10设有带焊料的电极。
图7是示意性示出将晶圆切片的工序的立体图。如图7所示，在切片工序S2中，沿着划线按压切刀4，从而切削晶圆1，分割为各个半导体芯片。
图8是示意性示出拾取半导体芯片的工序的立体图。如图8所示，各带底部填充膜的半导体芯片10，被保持在底部填充膜从而被拾取。
在半导体芯片搭载工序S3中，如图2所示，隔着底部填充膜配置带底部填充膜的半导体芯片10和电路基板30。另外，将带底部填充膜的半导体芯片10以使带焊料的电极和对置电极32对置的方式对位并配置。而且，通过加热焊接机，在底部填充膜出现流动性，但是以不发生真硬化的程度的既定温度、压力、时间的条件进行加热按压并搭载。
搭载时的温度条件，优选为30℃以上155℃以下。另外，压力条件优选为50N以下，更优选为40N以下。另外，时间条件优选为0.1秒以上10秒以下，更优选为0.1秒以上1.0秒以下。由此，能够使带焊料的电极不熔化而处于与电路基板30侧的电极相接的状态，并能使底部填充膜处于不完全硬化的状态。另外，由于在低的温度下固定，所以抑制空隙的发生，能够减少对半导体芯片10的损伤。
在接着的热压接工序S4中，在例如从第1温度以既定升温速度升温到第2温度的接合条件下，使带焊料的电极的焊料熔化并形成金属结合，并且使底部填充膜完全硬化。
另外，焊接机头通过树脂的弹性率保持在一定的高度，直至搭载后的底部填充膜的熔化开始温度为止，然后，根据伴随升温的树脂熔化一下子下降，达到头的最底点。该最底点取决于头的下降速度和树脂的硬化速度的关系。树脂硬化进一步进行后，头的高度因树脂和头的热膨胀而缓缓上升。这样，在从第1温度升温到第2温度的时间内使焊接机头下降到最底点为止，从而能够抑制伴随树脂熔化的空隙的发生。
第1温度优选为与底部填充材料的最低熔化粘度到达温度大致相同，即优选为50℃以上150℃以下。由此能够使底部填充材料的硬化动作与接合条件一致，能够抑制空隙的发生。另外，升温速度优选为50℃/sec以上150℃/sec以下。另外，第2温度根据焊料的种类，优选为200℃以上280℃以下，更优选为220℃以上260℃以下。由此，使带焊料的电极和基板电极金属结合，并且使底部填充膜完全硬化，能够使半导体芯片10的电极与电路基板30的电极电气、机械连接。
这样本实施方式中的半导体装置的制造方法，使含有环氧树脂、酸酐、丙烯树脂和有机过氧化物、并且在60℃以上100℃以下的任意温度下显示非宾厄姆流动性、动态粘弹性测定中的储存弹性率G’在10E＋02rad/s以下的角频率区域具有拐点、在该拐点以下的角频率中的储存弹性率G’为10E＋05Pa以上10E＋06Pa以下的底部填充材料20，预先粘合在形成有带焊料的电极的半导体芯片10，从而能够实现无空隙安装及良好的焊料接合性。
此外，在上述的实施方式中，使底部填充膜作为切片带起作用，但并不限于此，将切片带用于别处，在切片后使用底部填充膜进行倒装芯片安装也可。
[其他实施方式]
另外，本技术也可以适用在通过向设置在半导体芯片的小孔填充金属来电连接以三明治状叠置的多个芯片基板的TSV（穿透硅通孔：ThroughSiliconVia）技术。
即，也可以适用在层叠具有形成带焊料的电极的第1面和在第1面的相反侧形成与带焊料的电极对置的对置电极的第2面的多个芯片基板的半导体装置的制造方法。
在该情况下，以在第1芯片基板的第1面侧粘贴底部填充膜的状态，搭载于第2芯片基板的第2面。然后，在带焊料的电极的焊料的熔点以上的温度下将第1芯片基板的第1面和第2芯片基板的第2面进行热压接，从而能够得到层叠多个芯片基板的半导体装置。
[实施例]
＜3.实施例＞
以下，对本发明的实施例进行说明。在本实施例中，制作预供给型的底部填充膜，并进行了动态粘弹性测定。而且，利用底部填充膜使具有带焊料的电极的IC芯片和具有与之对置的电极的IC基板连接而制作安装体，并评价了空隙及焊料接合状态。此外，本发明并不限定于这些实施例。
动态粘弹性测定、安装体的制作、空隙的评价及焊料接合的评价，如下那样进行。
[动态粘弹性测定]
对于各底部填充膜，使用流变仪（TA社制ARES），设定温度为80℃，作成相对于角频率的动态粘性率η’以及相对于角频率的储存弹性率G’的主曲线，求出拐点（塑性屈服点）、拐点以下的角频率中的储存弹性率G’以及相对于拐点以下的角频率的动态粘性率η’的斜率。
[安装体的制作]
用压力机在50℃－0.5MPa的条件下将底部填充膜粘合在晶圆上，并切片而得到具有带焊料的电极的IC芯片。
IC芯片的大小为7mm□、厚度为200μm，具有在厚度20μm的由Cu构成的电极的前端形成有厚度16μm的焊料（Sn－3.5Ag，熔点221℃）的外围配置的凸点（φ30μm、85μm间距、280管脚）。
另外，与之对置的IC基板，同样地，其大小为7mm□、厚度为200μm，具有形成有厚度20μm的由Cu构成的电极的外围配置的凸点（φ30μm、85μm间距、280管脚）。
接着，利用倒装芯片焊接机，在80℃－0.5秒－30N的条件下将IC芯片搭载在IC基板上。
然后，利用倒装芯片焊接机，从80℃到250℃以50℃/sec的升温速度进行热压接。另外，在从80℃升温到250℃的时间内使焊接机头下降到最底点（30N）。而且，在150℃－2小时的条件下固化（cure），从而得到安装体。此外，在使用倒装芯片焊接机时的温度是通过热电偶测定的样本的实际温度。
[空隙的评价]
利用SAT（ScanningAcousticTomograph，超声波影像装置）观察了安装体。将不发生空隙的情况评价为“○”，在安装体发生空隙的情况评价为“×”。一般而言，产生空隙时，对长期可靠性带来负面影响的可能性高。
[焊料接合的评价]
切断安装体的样本，进行截面研磨，SEM（扫描电子显微镜：ScanningElectronMicroscope）观察IC芯片的电极与IC基板的电极之间的焊料的状态。将焊料连接和焊料润湿都良好的状态评价为“○”，将安装体的焊料连接或焊料润湿不充分的状态评价为“×”。
＜实施例1＞
混合40质量份的作为膜形成树脂的丙烯酸酯橡胶聚合物（品名：TeisanresinSG－P3，NAGASECHEMTEX公司制）、30质量份的环氧树脂（品名：JER1031S，三菱化学公司制）、20质量份的酸酐（品名：RIKASHIDDOHNA－100，新日本理化公司制）、1质量份的作为硬化促进剂的咪唑（品名：U－CAT－5002，SAN－APRO公司制）、49质量份的丙烯树脂（品名：OXZORUEA－0200，大阪有机化学公司制）、1质量份的有机过氧化物（品名：PERHEXAV，日油公司制）、和15质量份的填充剂（品名：AEROSILR202，日本AEROSIL公司制），调制了丙烯/环氧树脂为50/50的树脂组合物。用棒涂机向剥离处理后的PET（Polyethyleneterephthalate）涂敷该树脂组合物，在80℃的烘箱中干燥3分钟，制作了厚度50μm的底部填充膜（盖剥离PET（25μm）/底部填充膜（50μm）/基底剥离PET（50μm））。
表1中示出底部填充膜的动态粘弹性测定的结果以及安装体的评价结果。拐点为10E＋1.9rad/s、储存弹性率G’为10E＋5.3Pa、η’的斜率为10的一次方，底部填充膜显示非宾厄姆流动性。利用该底部填充膜制作的安装体的空隙的评价为“○”，焊料接合的评价为“○”。
＜比较例1＞
混合40质量份的作为膜形成树脂的丙烯酸酯橡胶聚合物（品名：TeisanresinSG－P3，NAGASECHEMTEX公司制）、55质量份的环氧树脂（品名：JER1031S，三菱化学公司制）、44质量份的酸酐（品名：RIKASHIDDOHNA－100，新日本理化公司制）、2质量份的作为硬化促进剂的咪唑（品名：U－CAT－5002，SAN－APRO公司制）和15质量份的填充剂（品名：AEROSILR202，日本AEROSIL公司制），调制了丙烯/环氧树脂为50/50的树脂组合物。用棒涂机向剥离处理后的PET（Polyethyleneterephthalate）涂敷该树脂组合物，在80℃的烘箱中干燥3分钟，制作了厚度50μm的底部填充膜（盖剥离PET（25μm）/底部填充膜（50μm）/基底剥离PET（50μm））。
表1中示出底部填充膜的动态粘弹性测定的结果以及安装体的评价结果。拐点为10E＋4.0rad/s、储存弹性率G’为10E＋4.3Pa、η’的斜率不到10的一次方，底部填充膜未显示非宾厄姆流动性。利用该底部填充膜制作的安装体的空隙的评价为“○”，焊料接合的评价为“×”。
＜比较例2＞
混合40质量份的作为膜形成树脂的丙烯酸酯橡胶聚合物（品名：TeisanresinSG－P3，NAGASECHEMTEX公司制）、96质量份的丙烯树脂（品名：OXZORUEA－0200，大阪有机化学公司制）、5质量份的有机过氧化物（品名：PERHEXAV，日油公司制）和15质量份的填充剂（品名：AEROSILR202，日本AEROSIL公司制），调制了丙烯/环氧树脂为50/50的树脂组合物。用棒涂机向剥离处理后的PET（Polyethyleneterephthalate）涂敷该树脂组合物，在80℃的烘箱中干燥3分钟，制作了厚度50μm的底部填充膜（盖剥离PET（25μm）/底部填充膜（50μm）/基底剥离PET（50μm））。
表1中示出底部填充膜的动态粘弹性测定的结果以及安装体的评价结果。拐点并不明确，10E＋02rad/s以下的储存弹性率G’为10E＋6.5Pa，10E＋02rad/s以下的η’的斜率超过10的一次方，底部填充膜未显示非宾厄姆流动性。利用该底部填充膜制作的安装体的空隙的评价为“×”，焊料接合的评价为“×”。
[表1]
如实施例那样通过使用熔化时显示非宾厄姆流动性的底部填充膜，能够实现无空隙安装及良好的焊料接合性。
标号说明
1晶圆；2底部填充膜；3夹具；4切刀；10半导体芯片；11半导体；12电极；13焊料；20底部填充材料；21第1粘接剂层；22第2粘接剂层；30电路基板；31基体材料；32对置电极。

Claims (9)

1.一种底部填充材料，在将形成有带焊料的电极的半导体芯片搭载于形成有与带焊料的电极对置的对置电极的电子部件之前，预先将所述半导体芯片贴合在半导体芯片，
所述底部填充材料含有环氧树脂、酸酐、丙烯树脂和有机过氧化物，
所述底部填充材料在60℃以上100℃以下的任意温度下，显示非宾厄姆流动性，
所述底部填充材料的动态粘弹性测定中的储存弹性率G’在10E＋02rad/s以下的角频率区域具有拐点，该拐点以下的角频率中的储存弹性率G’为10E＋05Pa以上10E＋06Pa以下。
2.如权利要求1所述的底部填充材料，其中，所述动态粘弹性测定中的动态粘性率η’以10的一次方的斜率对所述拐点以下的角频率成反比例。
3.如权利要求1或2所述的底部填充材料，其中，所述拐点以下的角频率中的储存弹性率G’为恒定值。
4.如权利要求1或2所述的底部填充材料，其中，
所述环氧树脂为缩水甘油基醚型环氧树脂，
所述酸酐为脂环式酸酐。
5.如权利要求3所述的底部填充材料，其中，
所述环氧树脂为缩水甘油基醚型环氧树脂，
所述酸酐为脂环式酸酐。
6.如权利要求1或2所述的底部填充材料，其中，
所述丙烯树脂为芴类丙烯酸酯，
所述有机过氧化物为过氧缩酮。
7.如权利要求3所述的底部填充材料，其中，
所述丙烯树脂为芴类丙烯酸酯，
所述有机过氧化物为过氧缩酮。
8.如权利要求4所述的底部填充材料，其中，
所述丙烯树脂为芴类丙烯酸酯，
所述有机过氧化物为过氧缩酮。
9.一种半导体装置的制造方法，其中包括：
搭载工序，将形成有带焊料的电极并且在该电极面贴合底部填充材料的半导体芯片，搭载于形成有与所述带焊料的电极对置的对置电极的电子部件；以及
热压接工序，将所述半导体芯片和所述电子部件热压接，
所述底部填充材料含有环氧树脂、酸酐、丙烯树脂和有机过氧化物，在60℃以上100℃以下的任意温度，显示非宾厄姆流动性，动态粘弹性测定中的储存弹性率G’在10E＋02rad/s以下的角频率区域具有拐点，该拐点以下的角频率中的储存弹性率G’为10E＋05Pa以上10E＋06Pa以下。
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CN105283948B (zh) 2019-07-16
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US9840645B2 (en) 2017-12-12
TW201528452A (zh) 2015-07-16
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JP2015056464A (ja) 2015-03-23
US20160017191A1 (en) 2016-01-21

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