CN105277576B - Tem样品安放布局 - Google Patents

Tem样品安放布局 Download PDF

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Publication number
CN105277576B
CN105277576B CN201510551041.4A CN201510551041A CN105277576B CN 105277576 B CN105277576 B CN 105277576B CN 201510551041 A CN201510551041 A CN 201510551041A CN 105277576 B CN105277576 B CN 105277576B
Authority
CN
China
Prior art keywords
sample
needle
support device
rotatable
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201510551041.4A
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English (en)
Chinese (zh)
Other versions
CN105277576A (zh
Inventor
D·富尔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of CN105277576A publication Critical patent/CN105277576A/zh
Application granted granted Critical
Publication of CN105277576B publication Critical patent/CN105277576B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202Movement
    • H01J2237/20207Tilt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202Movement
    • H01J2237/20214Rotation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22Treatment of data
    • H01J2237/226Image reconstruction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN201510551041.4A 2014-07-21 2015-07-20 Tem样品安放布局 Expired - Fee Related CN105277576B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462027035P 2014-07-21 2014-07-21
US62/027035 2014-07-21

Publications (2)

Publication Number Publication Date
CN105277576A CN105277576A (zh) 2016-01-27
CN105277576B true CN105277576B (zh) 2019-08-27

Family

ID=55075144

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510551041.4A Expired - Fee Related CN105277576B (zh) 2014-07-21 2015-07-20 Tem样品安放布局

Country Status (3)

Country Link
US (1) US9514913B2 (enExample)
JP (1) JP6385899B2 (enExample)
CN (1) CN105277576B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015215323A1 (de) * 2015-08-11 2017-02-16 Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts Technik zur tomografischen Bilderfassung
CN110118791B (zh) * 2019-05-21 2020-03-03 山东省分析测试中心 用于获取裂纹/晶界三维信息的ebsd设备样品台及方法
CN110672881A (zh) * 2019-09-30 2020-01-10 上海华力集成电路制造有限公司 金属栅结构及其制造方法
CN111208155B (zh) * 2020-03-13 2024-12-27 康湃医疗科技(苏州)有限公司 一种多角度摆放样品的x射线样品托架
CN113063967B (zh) * 2021-02-18 2023-02-10 上海大学 可实现三维原子探针微尖阵列样品转动的旋转样品台装置
US11476079B1 (en) * 2021-03-31 2022-10-18 Fei Company Method and system for imaging a multi-pillar sample
CN115047016A (zh) * 2022-08-16 2022-09-13 合肥晶合集成电路股份有限公司 立体tem样品结构及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200982932Y (zh) * 2006-11-03 2007-11-28 中国科学院金属研究所 一种用离子束加工样品界面实现背散射表征的装置

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JPS62281349A (ja) 1986-05-29 1987-12-07 Seiko Instr & Electronics Ltd 金属パタ−ン膜の形成方法及びその装置
US5104684A (en) 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
BE1007675A3 (nl) 1993-10-28 1995-09-12 Philips Electronics Nv Werkwijze voor het vervaardigen van preparaten voor een elektronenmicroscoop.
JPH08304243A (ja) * 1995-05-11 1996-11-22 Nippon Steel Corp 断面薄膜試料及びその作製方法及び断面薄膜試料用ホルダ
US8723144B2 (en) 2004-07-14 2014-05-13 Applied Materials Israel, Ltd. Apparatus for sample formation and microanalysis in a vacuum chamber
US7442924B2 (en) 2005-02-23 2008-10-28 Fei, Company Repetitive circumferential milling for sample preparation
JP4851804B2 (ja) 2006-02-13 2012-01-11 株式会社日立ハイテクノロジーズ 集束イオンビーム加工観察装置、集束イオンビーム加工観察システム及び加工観察方法
JP4923716B2 (ja) * 2006-05-11 2012-04-25 株式会社日立製作所 試料分析装置および試料分析方法
EP1890136A1 (en) 2006-08-16 2008-02-20 FEI Company Method for obtaining images from slices of a specimen
US7884326B2 (en) 2007-01-22 2011-02-08 Fei Company Manipulator for rotating and translating a sample holder
EP2051280A1 (en) 2007-10-18 2009-04-22 The Regents of the University of California Motorized manipulator for positioning a TEM specimen
JP5268324B2 (ja) * 2007-10-29 2013-08-21 株式会社日立ハイテクノロジーズ 荷電粒子線顕微装置及び顕微方法
JP2009192341A (ja) 2008-02-14 2009-08-27 Sumitomo Metal Mining Co Ltd 透過電子顕微鏡用薄片試料の作製方法、及びそれに用いる試料台
TWI372859B (en) 2008-10-03 2012-09-21 Inotera Memories Inc Method for manufacturing an electron tomography specimen with fiducial markers and method for constructing 3d image
JP5883658B2 (ja) * 2012-01-20 2016-03-15 株式会社日立ハイテクノロジーズ 荷電粒子線顕微鏡、荷電粒子線顕微鏡用試料ホルダ及び荷電粒子線顕微方法
US8502172B1 (en) 2012-06-26 2013-08-06 Fei Company Three dimensional fiducial
WO2014195998A1 (ja) * 2013-06-03 2014-12-11 株式会社日立製作所 荷電粒子線顕微鏡、荷電粒子線顕微鏡用試料ホルダ及び荷電粒子線顕微方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200982932Y (zh) * 2006-11-03 2007-11-28 中国科学院金属研究所 一种用离子束加工样品界面实现背散射表征的装置

Also Published As

Publication number Publication date
US9514913B2 (en) 2016-12-06
US20160020065A1 (en) 2016-01-21
JP6385899B2 (ja) 2018-09-05
CN105277576A (zh) 2016-01-27
JP2016025085A (ja) 2016-02-08

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Granted publication date: 20190827

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