CN105204691B - A kind of touch screen single side disappears the processing method of shadow electro-conductive glass - Google Patents
A kind of touch screen single side disappears the processing method of shadow electro-conductive glass Download PDFInfo
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- CN105204691B CN105204691B CN201510697129.7A CN201510697129A CN105204691B CN 105204691 B CN105204691 B CN 105204691B CN 201510697129 A CN201510697129 A CN 201510697129A CN 105204691 B CN105204691 B CN 105204691B
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Abstract
A kind of touch screen single side disappears the processing method of shadow electro-conductive glass, and the first step handles top glass substrate and lower glass substrate, second step, to top glass substrate and the upper interfering layer one of lower glass substrate sputtering, upper transparent passivating layer, lower interfering layer；Third walks, and upper interfering layer two and ito film sputtering are carried out on the basis of top glass substrate and lower glass substrate second step sputter；With good electromagnetic shielding, electrostatic protection and the shadow effect that disappears, and existing conventional conductive glass can be replaced completely, for downstream client provide low power consuming, high uniformity, low cost making capacitance plate electro-conductive glass.
Description
Technical field
The present invention relates to electro-conductive glass technical field, especially a kind of touch screen single side disappears the processing side of shadow electro-conductive glass
Method.
Background technology
Currently, capacitance screen products use widely, and the two-sided plating electro-conductive glass in capacitance plate is its main devices, double
Face plate electro-conductive glass conductive film required in aspect of performance it is tighter such as uniformity, heat resistance, acid-proof alkaline, resistance to
High temperature and humidity performance etc.；When making transparent circuitry, since technology difficulty increases, when making circuit frequently with harsh electricity
Road.In the production process, the position readily etched away that should not be etched, and there are the erosion trace track of circuit etch, influence it
Electromagnetic shielding, electrostatic protection function, existing erosion trace track can have an impact viewing graphic pattern.
In view of the foregoing, a kind of touch screen single side is now developed to disappear the processing method of shadow electro-conductive glass.
Invention content
Purpose of the invention is to overcome the shortcomings in the prior art, provides a kind of touch screen single side and disappears shadow electro-conductive glass
Processing method, there is good electromagnetic shielding, electrostatic protection and the shadow effect that disappears, and existing conventional pilot can be replaced completely
Electric glass, for downstream client provide low power consuming, high uniformity, low cost making capacitance plate electro-conductive glass.
The present invention to achieve the goals above, adopts the following technical scheme that：A kind of touch screen single side disappears shadow electro-conductive glass
Processing method, the touch screen single side shadow electro-conductive glass that disappears is by top glass substrate, tin face, air surface, upper interfering layer one, upper
Bright passivation layer, upper interfering layer two, lower glass substrate, lower interfering layer, ito film are constituted；The two of top glass substrate and lower glass substrate
A surface is tin face and air surface, the air surface correspondence fitting of top glass substrate and lower glass substrate, the tin of top glass substrate
Upper interfering layer one is arranged in face top, the upper transparent passivating layer of setting between upper interfering layer one and upper interfering layer two, on upper interfering layer two
Lower interfering layer is arranged in the tin face lower section of side's setting ito film, lower glass substrate, and ito film is arranged below lower interfering layer；
The upper transparent passivating layer uses transparent silica or transparent silicon oxynitride；
The upper interfering layer one, upper interfering layer two, lower interfering layer are all made of niobium pentaoxide.
The first step handles top glass substrate and lower glass substrate,
A, top glass substrate and lower glass substrate are cut, is first cut in X direction, then cut along Y-direction, then again
Break piece processing；
B, to after cutting top glass substrate and lower glass substrate carry out edging and chamfering, first edging chamfering again in X direction,
After being rotated by 90 °, then along Y-direction edging and chamfering；
C, scrub drying；
D, to after edging and chamfering top glass substrate and lower glass substrate be polished；
E, drying is scrubbed again；
Second step, to top glass substrate and the upper interfering layer one of lower glass substrate sputtering, upper transparent passivating layer, lower interfering layer；
A, top glass substrate and lower glass substrate after being dried up to polishing scrub are bonded together along air surface and heat；
The heating temperature used is 150-280 degree Celsius；
B, using magnetic control sputtering vacuum coating equipment in sputtering above the tin face of the top glass substrate upper surface after heating
Interfering layer one, upper interfering layer one use niobium pentaoxide, the one upper transparent passivating layer of top sputtering of upper interfering layer, upper transparent passivating layer
Using transparent silica or transparent silicon oxynitride, the lower interfering layer of sputtering below the tin face of lower glass substrate lower surface, under
Interfering layer uses niobium pentaoxide；
Third walks, and upper interfering layer two and ITO are carried out on the basis of top glass substrate and lower glass substrate second step sputter
Film sputters；
A, top glass substrate and lower glass substrate after being sputtered to second step heat；Heating temperature uses 280-380
Degree Celsius；
B, using magnetic control sputtering vacuum coating equipment, to after heating top glass substrate and lower glass substrate sputter, upper
The upper interfering layer two of sputtering, upper interfering layer two use niobium pentaoxide, upper interfering layer two above the upper transparent passivating layer of glass substrate
Top sputters ito film, and ito film is sputtered below lower interfering layer；
C, to the top glass substrate and lower glass substrate after sputtering ito film, buffered room makes annealing treatment：First it is cooled to
200 degrees Celsius, then 300 degrees Celsius of stabilizations are heated up to, complete the plated film to top glass substrate and lower glass substrate.
The beneficial effects of the invention are as follows：The present invention can protect indium tin oxide conductive film to etch circuit, not by manufacturing process
The etching of acid solution in technique avoids etching away the position that etch in the production process, makes oxygen in the production process
Change indium tin conductive film etching circuit and reach design requirement, there is good electromagnetic shielding, electrostatic protection and the shadow effect that disappears, and energy
It is enough to replace existing conventional conductive glass completely, for downstream client provide low power consuming, high uniformity, low cost making capacitance plate
Use electro-conductive glass.
Description of the drawings
The invention will be further described below in conjunction with the accompanying drawings：
Fig. 1 is general assembly structural schematic diagram；
In Fig. 1：Top glass substrate 1, tin face 2, air surface 3, upper interfering layer 1, upper transparent passivating layer 5, upper interfering layer two
6, lower glass substrate 7, lower interfering layer 8, ito film 9.
Specific implementation mode
With reference to embodiment, invention is further described in detail with specific implementation mode：
Embodiment 1
Two surfaces of top glass substrate 1 and lower glass substrate 7 are tin face 2 and air surface 3, and top glass substrate 1 is under
The air surface 3 of glass substrate 7 corresponds to fitting, the 2 upper interfering layer 1 of top setting of tin face of top glass substrate 1, upper interfering layer 1
Upper transparent passivating layer 5 is set between upper interfering layer 26, and ito film 9, the tin of lower glass substrate 7 is arranged in 26 top of upper interfering layer
The lower interfering layer 8 of 2 lower section setting of face, ito film 9 is arranged in 8 lower section of lower interfering layer；
The upper transparent passivating layer 5 uses transparent silica or transparent silicon oxynitride；
The upper interfering layer 1, upper interfering layer 26, lower interfering layer 8 are all made of niobium pentaoxide.
Embodiment 2
The first step handles top glass substrate 1 and lower glass substrate 7,
A, top glass substrate 1 and lower glass substrate 7 are cut, is first cut in X direction, then cut along Y-direction, then
Piece processing is broken again；
B, to after cutting top glass substrate 1 and lower glass substrate 7 carry out edging and chamfering, first edging in X direction, then fall
Angle, after being rotated by 90 °, then along Y-direction edging and chamfering；
C, scrub drying；
D, to after edging and chamfering top glass substrate 1 and lower glass substrate 7 be polished；
E, drying is scrubbed again；
Second step is to top glass substrate 1 and the upper interfering layer 1 of the sputtering of lower glass substrate 7, upper transparent passivating layer 5, lower interference
Layer 8；
A, top glass substrate 1 and lower glass substrate 7 after being dried up to polishing scrub are bonded together along air surface 3 and add
Heat；The heating temperature used is 150-280 degree Celsius；
B, 2 top of tin face of 1 upper surface of top glass substrate after heating is sputtered using magnetic control sputtering vacuum coating equipment
Upper interfering layer 1, upper interfering layer 1 use niobium pentaoxide, the one 4 upper transparent passivating layer 5 of top sputtering of upper interfering layer upper transparent
Passivation layer 5 uses transparent silica or transparent silicon oxynitride, under the 2 lower section sputtering of tin face of 7 lower surface of lower glass substrate
Interfering layer 8, lower interfering layer 8 use niobium pentaoxide；
Third walks, and on the basis of top glass substrate 1 and 7 second step of lower glass substrate sputter, carries out 26 He of interfering layer
Ito film 9 sputters；
A, top glass substrate 1 and lower glass substrate 7 after being sputtered to second step heat；Heating temperature uses 280-
380 degrees Celsius；
B, using magnetic control sputtering vacuum coating equipment, to after heating top glass substrate 1 and lower glass substrate 7 sputter,
The 5 upper interfering layer 26 of top sputtering of upper transparent passivating layer of top glass substrate 1, upper interfering layer 26 uses niobium pentaoxide, upper dry
It relates to 26 top of layer and sputters ito film 9,8 lower section of lower interfering layer sputters ito film 9；
C, to sputtering ito film 9 after top glass substrate 1 and lower glass substrate 7, buffered room make annealing treatment：First cool down
To 200 degrees Celsius, then 300 degrees Celsius of stabilizations are heated up to, complete the plated film to top glass substrate 1 and lower glass substrate 7.
Claims (1)
- The processing method of shadow electro-conductive glass 1. a kind of touch screen single side disappears, the touch screen single side shadow electro-conductive glass that disappears is by upper glass Glass substrate (1), tin face (2), air surface (3), upper interfering layer one (4), upper transparent passivating layer (5), upper interfering layer two (6), lower glass Glass substrate (7), lower interfering layer (8), ito film (9) are constituted；It is characterized in that：Top glass substrate (1) and lower glass substrate (7) Two surfaces are tin face (2) and air surface (3), the corresponding patch of air surface (3) of top glass substrate (1) and lower glass substrate (7) Close, the upper interfering layer one (4) of setting above the tin face (2) of top glass substrate (1), upper interfering layer one (4) and upper interfering layer two (6) it Between upper transparent passivating layer (5) is set, setting ito film (9) above upper interfering layer two (6), under the tin face (2) of lower glass substrate (7) The lower interfering layer (8) of side's setting, lower interfering layer (8) lower section setting ito film (9)；The upper transparent passivating layer (5) uses transparent silica or transparent silicon oxynitride；The upper interfering layer one (4), upper interfering layer two (6), lower interfering layer (8) are all made of niobium pentaoxide；A kind of touch screen single side disappears the processing method of shadow electro-conductive glass, and concrete operation step is as follows：The first step handles top glass substrate (1) and lower glass substrate (7),A, top glass substrate (1) and lower glass substrate (7) are cut, is first cut in X direction, then cut along Y-direction, then Piece processing is broken again；B, to after cutting top glass substrate (1) and lower glass substrate (7) carry out edging and chamfering, first edging in X direction, then fall Angle, after being rotated by 90 °, then along Y-direction edging and chamfering；C, scrub drying；D, to after edging and chamfering top glass substrate (1) and lower glass substrate (7) be polished；E, drying is scrubbed again；Second step, to interfering layer one (4) in top glass substrate (1) and lower glass substrate (7) sputtering, upper transparent passivating layer (5), under Interfering layer (8)；A, to after polishing scrub drying top glass substrate (1) and lower glass substrate (7) be bonded together progress along air surface (3) Heating；The heating temperature used is 150-280 degree Celsius；B, using magnetic control sputtering vacuum coating equipment to sputtering above the tin face (2) of top glass substrate (1) upper surface after heating Upper interfering layer one (4), upper interfering layer one (4) use niobium pentaoxide, upper transparent passivating layer are sputtered above upper interfering layer one (4) (5), upper transparent passivating layer (5) uses transparent silica or transparent silicon oxynitride, the tin of lower glass substrate (7) lower surface The lower interfering layer (8) of sputtering, lower interfering layer (8) use niobium pentaoxide below face (2)；Third walks, and on the basis of top glass substrate (1) and lower glass substrate (7) second step sputter, carries out interfering layer two (6) It is sputtered with ito film (9)；A, top glass substrate (1) and lower glass substrate (7) after being sputtered to second step heat；Heating temperature uses 280- 380 degrees Celsius；B, using magnetic control sputtering vacuum coating equipment, to after heating top glass substrate (1) and lower glass substrate (7) sputter, The upper interfering layer two (6) of sputtering above the upper transparent passivating layer (5) of top glass substrate (1), upper interfering layer two (6) is using five oxidations two Niobium, upper interfering layer two (6) top sputtering ito film (9), lower interfering layer (8) lower section sputtering ito film (9)；C, to after sputtering ito film (9) top glass substrate (1) and lower glass substrate (7), buffered room make annealing treatment：First drop Temperature is to 200 degrees Celsius, then is heated up to 300 degrees Celsius of stabilizations, completes the plated film to top glass substrate (1) and lower glass substrate (7).
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| CN201510697129.7A CN105204691B (en) | 2015-10-19 | 2015-10-19 | A kind of touch screen single side disappears the processing method of shadow electro-conductive glass |
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| CN201510697129.7A CN105204691B (en) | 2015-10-19 | 2015-10-19 | A kind of touch screen single side disappears the processing method of shadow electro-conductive glass |
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| CN105204691B true CN105204691B (en) | 2018-08-10 |
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| CN106095213A (en) * | 2016-08-09 | 2016-11-09 | 洛阳康耀电子有限公司 | A kind of half-reflection and half-transmission touch screen disappears the processing method of shadow electro-conductive glass |
| CN106095212A (en) * | 2016-08-09 | 2016-11-09 | 洛阳康耀电子有限公司 | A kind of full impregnated touch screen disappears the processing method of shadow electro-conductive glass |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103218102A (en) * | 2013-05-10 | 2013-07-24 | 洛阳恒兆电子有限公司 | Method for machining double-sided coated glass for capacitive screen and double-sided coated glass |
| CN104205021A (en) * | 2012-03-30 | 2014-12-10 | 应用材料公司 | Transparent body for use in a touch screen panel manufacturing method and system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2863291A1 (en) * | 2013-10-18 | 2015-04-22 | Applied Materials, Inc. | Transparent body for a touch panel manufacturing method and system for manufacturing a transparent body for a touch screen panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104205021A (en) * | 2012-03-30 | 2014-12-10 | 应用材料公司 | Transparent body for use in a touch screen panel manufacturing method and system |
| CN103218102A (en) * | 2013-05-10 | 2013-07-24 | 洛阳恒兆电子有限公司 | Method for machining double-sided coated glass for capacitive screen and double-sided coated glass |
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