CN203338277U - Improved structure of film sensor - Google Patents
Improved structure of film sensor Download PDFInfo
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- CN203338277U CN203338277U CN2013202496553U CN201320249655U CN203338277U CN 203338277 U CN203338277 U CN 203338277U CN 2013202496553 U CN2013202496553 U CN 2013202496553U CN 201320249655 U CN201320249655 U CN 201320249655U CN 203338277 U CN203338277 U CN 203338277U
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- film sensor
- transparent electrode
- plastic base
- electrode layer
- touch
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Abstract
The utility model discloses an improved structure of a film sensor. The improved structure of the film sensor comprises a plastic base plate, a flexible printed circuit board (FPC) with a touch integrated circuit (IC) chip, wherein transparent electrode layers are arranged on the two surfaces of the plastic base plate, buffer layers are arranged between the plastic base plate and the two transparent electrode layers, and the FPC with the touch IC chip is connected onto pins of the transparent electrode layers by overheating. The improved structure of the film sensor can solve the problem that an existing film sensor is low in hot pressing yield, improves product performance of the film sensor, and has strong practicability.
Description
Technical field
The utility model relates to the technical field of touch-screen, refers more particularly to the structure of a kind of FILM SENSOR.
Background technology
Touch-screen is as a kind of intelligentized human-computer interaction interface product, a lot of fields in social production and life have obtained application more and more widely at present, especially with the fastest developing speed in consumer electronics sector (as fields such as smart mobile phone, panel computers).
Touch screen technology is of a great variety, mainly comprises resistance-type, condenser type, infrared type, table sound wave type etc.Capacitive touch screen not only shows and is quick on the draw, and support multi-point touch, and the life-span is long, and the maturation along with controlling the IC technology, become mainstream technology in the market.
Ripe capacitive touch screen technology is generally the GG structure at present, as shown in Figure 1, inductor (sensor) 12 generally is produced on glass substrate 11 surfaces, to carry out electricity with the electrode pin of sensor with the FPC 13 of touch-control IC chip 14 by hot pressing and be connected, and finally glass sensor and glass cover-plate 11 be fitted and form touch panel.The advantage of GG structure touch-screen is that touch sensible is highly sensitive, and properties of product are stable, and reliability is high; But this structural thickness is thicker, cost is higher, is unfavorable for the lightening and cost degradation of product.
If the glass substrate 11 in Fig. 1 is changed into to film substrate (as the PET film), be about to the surface that sensor pattern electrodes layer 12 is produced on the PET film, so just formed existing GF structure touch-screen.Due to PET film very thin (~ 0.2mm), and cost is lower, and therefore this structure can be so that the integral thickness of touch-screen reduces, and cost is minimized.There is a very large problem in existing GF structure touch-screen, and the hot pressing yield that is exactly FPC is not high.Analyze reason, this is the thermal expansivity higher (thermal linear expansion coefficient is 60x10-6 m/ (m.k)) due to the PET film, and there are differences with the thermal expansivity of FPC, therefore the problems such as contraposition skew, loose contact easily occur in FPC hot pressing, greatly affected the hot pressing yield of FPC.
The utility model content
The purpose of this utility model is exactly for existing film sensor and the low problem of FPC hot pressing yield, proposes the structure of a kind of improved film sensor.
The technical solution of the utility model is:
The structure of a kind of improved film sensor, it is characterized in that: include plastic base, with the FPC of touch-control IC chip, the two sides of plastic base is equipped with transparent electrode layer, be equipped with cushion between plastic base and two-layer transparent electrode layer, be connected on the pin of transparent electrode layer by hot pressing with the FPC of touch-control IC chip.
The structure of described improved film sensor is characterized in that: described plastic base adopts the PET transparent organic film.
The structure of described improved film sensor is characterized in that: described cushion is a kind of high temperature resistant, thermal insulation good, thermal expansivity is low transparent oxide film, can adopt the films such as silicon dioxide or magnesium oxide.
The structure of described improved film sensor is characterized in that: described transparent electrode layer is the tin indium oxide material.
Cushion and transparent electrode layer are all to make by the method for vacuum magnetic-control sputtering.
Graphically completing by laser ablation of transparent electrode layer.
With respect to existing technology, the utility model has the advantages that:
Owing to having increased cushion (as the SiO2 film) between PET film and ITO electrode layer, the effect of cushion, be for the ITO electrode layer provides even curface more on the one hand, contribute to improve the performance (as square resistance, homogeneity, adhesion etc.) of ITO electrode layer; On the other hand, due to cushion have advantages of high temperature resistant, thermal insulation good, thermal expansivity low (thermal expansivity of SiO2 only have 0.5 * 10 ~-6/K), therefore, when FPC hot pressing, insulation course plays the effect of protection plastics (PET) substrate.Because heat pressing process has been avoided contacting with the direct of plastic base, therefore can effectively solve the not high problem of prior art hot pressing yield, product hot pressing yield is promoted greatly.
The accompanying drawing explanation
Fig. 1 is existing film sensor structural representation.
Fig. 2 is improved film sensor structural representation.
Embodiment
For technical matters, the technical scheme that the utility model is solved makes those of ordinary skill in the art clearer, below in conjunction with the accompanying drawing explanation, the present invention is described in further detail.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
The structure of a kind of improved film sensor, include plastic base 21, with the FPC 23 of touch-control IC chip 24, the two sides of plastic base 21 is equipped with transparent electrode layer 22, be equipped with cushion 25 between plastic base 21 and two-layer transparent electrode layer 22, be connected on the pin of transparent electrode layer 22 by hot pressing with the FPC 23 of touch-control IC chip 24.
Cushion 25 is a kind of high temperature resistant, thermal insulation good, thermal expansivity is low transparent oxide film, can adopt the films such as silicon dioxide or magnesium oxide.
Concrete making step:
1, make cushion and transparent electrode layer on the PET film
At room temperature, utilize the method for vacuum magnetic-control sputtering to make respectively SiO2 film cushion and ITO transparent conductive film on the two sides of PET film, then vacuum annealing at 150 ℃ of temperature, annealing time is 1 hour.Cushion and electrode layer carry out on the same coating film production line, can save great amount of cost.The THICKNESS CONTROL of SiO2 is at 10 ~ 30nm, and the square resistance of ITO electrode layer is between 100 ~ 200 Ω/sqr.
2, the ito transparent electrode layer is graphical
Utilize etching laser machining to carry out graphically the ITO electrode layer, regulate laser energy and bundle spot size, the ITO electrode layer is formed to certain electrode pattern.To note controlling laser energy when wanting the ITO etching, not damage cushion.
3, the connection of FPC
Utilize heat pressing process, at first anisotropy conductiving glue (ACF) is pressed on the pin of ITO electrode layer, hot pressing temperature is 90 ℃ of left and right, then will press on ACF with the FPC of touch-control IC chip, and hot pressing temperature is between 250 ~ 300 ℃.
Claims (4)
1. the structure of an improved film sensor, it is characterized in that: include plastic base, with the FPC of touch-control IC chip, the two sides of plastic base is equipped with transparent electrode layer, be equipped with cushion between plastic base and two-layer transparent electrode layer, be connected on the pin of transparent electrode layer by hot pressing with the FPC of touch-control IC chip.
2. the structure of improved film sensor as claimed in claim 1, is characterized in that: described plastic base employing PET transparent organic film.
3. the structure of improved film sensor as claimed in claim 1, it is characterized in that: described cushion is a kind of transparent oxide film, can adopt the films such as silicon dioxide or magnesium oxide.
4. the structure of improved film sensor as claimed in claim 1, it is characterized in that: described transparent electrode layer is the tin indium oxide material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202496553U CN203338277U (en) | 2013-05-09 | 2013-05-09 | Improved structure of film sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202496553U CN203338277U (en) | 2013-05-09 | 2013-05-09 | Improved structure of film sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203338277U true CN203338277U (en) | 2013-12-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013202496553U Expired - Fee Related CN203338277U (en) | 2013-05-09 | 2013-05-09 | Improved structure of film sensor |
Country Status (1)
| Country | Link |
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| CN (1) | CN203338277U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105183246A (en) * | 2014-06-12 | 2015-12-23 | 宸鸿科技(厦门)有限公司 | Capacitive touch control panel |
| CN105204695A (en) * | 2014-06-12 | 2015-12-30 | 宸鸿科技(厦门)有限公司 | Nanometer silver line conductive overlapping structure and capacitive touch panel |
| CN105242801A (en) * | 2014-07-09 | 2016-01-13 | 章晶晶 | Touch sensor and display apparatus |
| CN105589584A (en) * | 2014-10-21 | 2016-05-18 | 宸鸿科技(厦门)有限公司 | Touch device and production method thereof |
-
2013
- 2013-05-09 CN CN2013202496553U patent/CN203338277U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105183246A (en) * | 2014-06-12 | 2015-12-23 | 宸鸿科技(厦门)有限公司 | Capacitive touch control panel |
| CN105204695A (en) * | 2014-06-12 | 2015-12-30 | 宸鸿科技(厦门)有限公司 | Nanometer silver line conductive overlapping structure and capacitive touch panel |
| CN105242801A (en) * | 2014-07-09 | 2016-01-13 | 章晶晶 | Touch sensor and display apparatus |
| CN105589584A (en) * | 2014-10-21 | 2016-05-18 | 宸鸿科技(厦门)有限公司 | Touch device and production method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131211 Termination date: 20210509 |