CN105204691A - Method for processing single-sided shadow mark vanishing conductive glass - Google Patents
Method for processing single-sided shadow mark vanishing conductive glass Download PDFInfo
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- CN105204691A CN105204691A CN201510697129.7A CN201510697129A CN105204691A CN 105204691 A CN105204691 A CN 105204691A CN 201510697129 A CN201510697129 A CN 201510697129A CN 105204691 A CN105204691 A CN 105204691A
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Abstract
The invention discloses a method for processing single-sided shadow mark vanishing conductive glass. The method comprises the following steps: step 1, treating an upper glass substrate and a lower glass substrate; step 2, sputtering an intervention layer I, an upper transparent passivation layer and a lower intervention layer on the upper glass substrate and the lower glass substrate; step 3, on the basis of sputtering in step 2, sputtering an intervention layer II and ITO films on the upper glass substrate and the lower glass substrate. The glass processed according to the method is good in electromagnetic shielding effect, electrostatic protection effect and shadow mark vanishing effect, and can replace the conventional conductive glass completely; through adoption of the method, low-energy, high-homogeneity and low-cost conductive glass for capacitive screen production is provided for downstream customers.
Description
Technical field
The present invention relates to electro-conductive glass technical field, especially a kind of touch-screen one side disappears the job operation of shadow electro-conductive glass.
Background technology
At present, capacitance plate product uses widely, and the two-sided plating electro-conductive glass in capacitance plate is its main devices, the conductive film of two-sided plating electro-conductive glass requires relatively tighter at aspect of performance, such as homogeneity, heat resistance, acid-proof alkaline, high-temp resisting high-humidity resisting performance etc.; When making transparent circuitry, because technology difficulty increases, often adopt harsh circuit at making circuit.In manufacturing process, easily etch away the position that should not etch, and there is the erosion trace track of circuit etch, affect its electromagnetic screen, electrostatic protection function, the erosion trace track of existence can have an impact to viewing graphic pattern.
In view of the foregoing, now develop a kind of touch-screen one side to disappear the job operation of shadow electro-conductive glass.
Summary of the invention
The object of the invention is to overcome deficiency of the prior art, the job operation that a kind of touch-screen one side disappears shadow electro-conductive glass is provided, there is good electromagnetic screen, electrostatic defending and the shadow effect that disappears, and existing conventional conductive glass can be replaced completely, for downstream client provides the making capacitance plate electro-conductive glass of low power consuming, high uniformity, low cost.
The present invention to achieve these goals, adopt following technical scheme: a kind of touch-screen one side disappears the job operation of shadow electro-conductive glass, the described touch-screen one side shadow electro-conductive glass that disappears is made up of top glass substrate, tin face, air surface, upper interfering layer one, upper transparent passivating layer, upper interfering layer two, lower glass substrate, lower interfering layer, ito film; Two surfaces of top glass substrate and lower glass substrate are tin face and air surface, the air surface correspondence laminating of top glass substrate and lower glass substrate, above the tin face of top glass substrate, interfering layer one is set, between upper interfering layer one and upper interfering layer two, transparent passivating layer is set, above upper interfering layer two, ito film is set, below the tin face of lower glass substrate, lower interfering layer is set, below lower interfering layer, ito film is set;
Described upper transparent passivating layer adopts transparent silicon dioxide or transparent silicon oxynitride;
Described upper interfering layer one, upper interfering layer two, lower interfering layer all adopt niobium pentaoxide.
The first step, processes top glass substrate and lower glass substrate,
A, top glass substrate and lower glass substrate to be cut, first X cutting, then Y cutting, and then break sheet process;
B, to cutting after top glass substrate and lower glass substrate carry out edging and chamfering, first X edging chamfering again, half-twist is again to Y edging and chamfering;
C, scrub and dry up;
D, polishing is carried out to the top glass substrate after edging and chamfering and lower glass substrate;
E, scrub and dry up again;
Second step, to top glass substrate and lower glass substrate sputtering upper interfering layer one, upper transparent passivating layer, lower interfering layer; .
A, polishing scrubbed dry up rear top glass substrate and lower glass substrate and to be bonded together along air surface and to heat; The heating-up temperature adopted is 150-280 degree Celsius;
B, utilize magnetic control sputtering vacuum coating equipment to the upper interfering layer one of sputtering above the tin face of the top glass substrate upper surface after heating, upper interfering layer one adopts niobium pentaoxide, the upper transparent passivating layer of sputtering above upper interfering layer one, upper transparent passivating layer adopts transparent silicon dioxide or transparent silicon oxynitride, the lower interfering layer of sputtering below the tin face of lower glass substrate lower surface, lower interfering layer adopts niobium pentaoxide;
3rd step, interfering layer two and ito film sputtering on the basis that top glass substrate and lower glass substrate second step sputter is carried out;
A, to second step sputtering after top glass substrate and lower glass substrate heat; Heating-up temperature adopts 280-380 degree Celsius;
B, utilize magnetic control sputtering vacuum coating equipment, to the top glass substrate after heating and lower glass substrate sputtering, interfering layer two in sputtering above the upper transparent passivating layer of top glass substrate, upper interfering layer two adopts niobium pentaoxide, sputtering ITO film above upper interfering layer two, sputtering ITO film below lower interfering layer;
C, to the top glass substrate after sputtering ITO film and lower glass substrate, do annealing in process through surge chamber: be first cooled to 200 degrees Celsius, then heat to 300 degrees Celsius and stablize, complete the plated film to top glass substrate and lower glass substrate.
The invention has the beneficial effects as follows: the present invention can protect indium tin oxide conductive film to etch circuit; not by the etching of the acid solution made in process; avoid in manufacturing process, etch away the position that should not etch; in manufacturing process, make indium tin oxide conductive film etch circuit reach designing requirement; there is good electromagnetic screen, electrostatic defending and the shadow effect that disappears; and existing conventional conductive glass can be replaced completely, for downstream client provides the making capacitance plate electro-conductive glass of low power consuming, high uniformity, low cost.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the invention will be further described:
Fig. 1 is, general assembly structural representation;
In Fig. 1: top glass substrate 1, tin face 2, air surface 3, upper interfering layer 1, upper transparent passivating layer 5, upper interfering layer 26, lower glass substrate 7, lower interfering layer 8, ito film 9.
Embodiment
Below in conjunction with embodiment and embodiment, the present invention is described in further detail:
Embodiment 1
Two surfaces of top glass substrate 1 and lower glass substrate 7 are tin face 2 and air surface 3, the air surface 3 correspondence laminating of top glass substrate 1 and lower glass substrate 7, above the tin face 2 of top glass substrate 1, interfering layer 1 is set, between upper interfering layer 1 and upper interfering layer 26, transparent passivating layer 5 is set, above upper interfering layer 26, ito film 9 is set, below the tin face 2 of lower glass substrate 7, lower interfering layer 8 is set, below lower interfering layer 8, ito film 9 is set;
Described upper transparent passivating layer 5 adopts transparent silicon dioxide or transparent silicon oxynitride;
Described upper interfering layer 1, upper interfering layer 26, lower interfering layer 8 all adopt niobium pentaoxide.
Embodiment 2
The first step, processes top glass substrate 1 and lower glass substrate 7,
A, top glass substrate 1 and lower glass substrate 7 to be cut, first X cutting, then Y cutting, and then break sheet process;
B, to cutting after top glass substrate 1 and lower glass substrate 7 carry out edging and chamfering, first X edging, then chamfering, half-twist is again to Y edging and chamfering;
C, scrub and dry up;
D, polishing is carried out to the top glass substrate 1 after edging and chamfering and lower glass substrate 7;
E, scrub and dry up again;
Second step sputters upper interfering layer 1, upper transparent passivating layer 5, lower interfering layer 8 to top glass substrate 1 and lower glass substrate 7;
A, polishing scrubbed dry up rear top glass substrate 1 and lower glass substrate 7 and to be bonded together along air surface 3 and to heat; The heating-up temperature adopted is 150-280 degree Celsius;
B, utilize magnetic control sputtering vacuum coating equipment to the upper interfering layer 1 of sputtering above the tin face 2 of top glass substrate 1 upper surface after heating, upper interfering layer 1 adopts niobium pentaoxide, the upper transparent passivating layer 5 of sputtering above upper interfering layer 1, upper transparent passivating layer 5 adopts transparent silicon dioxide or transparent silicon oxynitride, the lower interfering layer 8 of sputtering below the tin face 2 of lower glass substrate 7 lower surface, lower interfering layer 8 adopts niobium pentaoxide;
3rd step, on the basis of top glass substrate 1 and the sputtering of lower glass substrate 7 second step, carries out upper interfering layer 26 and ito film 9 sputters;
A, to second step sputtering after top glass substrate 1 and lower glass substrate 7 heat; Heating-up temperature adopts 280-380 degree Celsius;
B, utilize magnetic control sputtering vacuum coating equipment, top glass substrate 1 after heating and lower glass substrate 7 are sputtered, interfering layer 26 in sputtering above the upper transparent passivating layer 5 of top glass substrate 1, upper interfering layer 26 adopts niobium pentaoxide, sputtering ITO film 9 above upper interfering layer 26, sputtering ITO film 9 below lower interfering layer 8;
C, to the top glass substrate 1 after sputtering ITO film 9 and lower glass substrate 7, do annealing in process through surge chamber: be first cooled to 200 degrees Celsius, then heat to 300 degrees Celsius and stablize, complete the plated film to top glass substrate 1 and lower glass substrate 7.
Claims (2)
1. touch-screen one side disappears a job operation for shadow electro-conductive glass, and the described touch-screen one side shadow electro-conductive glass that disappears is made up of top glass substrate (1), tin face (2), air surface (3), upper interfering layer one (4), upper transparent passivating layer (5), upper interfering layer two (6), lower glass substrate (7), lower interfering layer (8), ito film (9), it is characterized in that: two surfaces of top glass substrate (1) and lower glass substrate (7) are tin face (2) and air surface (3), air surface (3) the correspondence laminating of top glass substrate (1) and lower glass substrate (7), the top, tin face (2) of top glass substrate (1) arranges interfering layer one (4), transparent passivating layer (5) is set between upper interfering layer one (4) and upper interfering layer two (6), upper interfering layer two (6) top arranges ito film (9), the below, tin face (2) of lower glass substrate (7) arranges lower interfering layer (8), lower interfering layer (8) below arranges ito film (9),
Described upper transparent passivating layer (5) adopts transparent silicon dioxide or transparent silicon oxynitride;
Described upper interfering layer one (4), upper interfering layer two (6), lower interfering layer (8) all adopt niobium pentaoxide.
2. touch-screen one side disappears a job operation for shadow electro-conductive glass, it is characterized in that:
The first step, processes top glass substrate (1) and lower glass substrate (7),
A, top glass substrate (1) and lower glass substrate (7) to be cut, first X cutting, then Y cutting, and then break sheet process;
B, to cutting after top glass substrate (1) and lower glass substrate (7) carry out edging and chamfering, first X edging, then chamfering, half-twist is again to Y edging and chamfering;
C, scrub and dry up;
D, polishing is carried out to the top glass substrate (1) after edging and chamfering and lower glass substrate (7);
E, scrub and dry up again;
Second step, to interfering layer one (4), upper transparent passivating layer (5), lower interfering layer (8) in top glass substrate (1) and lower glass substrate (7) sputtering;
A, polishing scrubbed dry up rear top glass substrate (1) and lower glass substrate (7) and to be bonded together along air surface (3) and to heat; The heating-up temperature adopted is 150-280 degree Celsius;
B, utilize magnetic control sputtering vacuum coating equipment to the upper interfering layer one (4) of top, tin face (2) sputtering of top glass substrate (1) upper surface after heating, upper interfering layer one (4) adopts niobium pentaoxide, the upper transparent passivating layer (5) of upper interfering layer one (4) top sputtering, upper transparent passivating layer (5) adopts transparent silicon dioxide or transparent silicon oxynitride, the lower interfering layer (8) of below, tin face (2) sputtering of lower glass substrate (7) lower surface, lower interfering layer (8) adopts niobium pentaoxide;
3rd step, on the basis that top glass substrate (1) and lower glass substrate (7) second step sputter, carries out upper interfering layer two (6) and ito film (9) sputtering;
A, to second step sputtering after top glass substrate (1) and lower glass substrate (7) heat; Heating-up temperature adopts 280-380 degree Celsius;
B, utilize magnetic control sputtering vacuum coating equipment, to the top glass substrate (1) after heating and lower glass substrate (7) sputtering, at the upper interfering layer two (6) of upper transparent passivating layer (5) top sputtering of top glass substrate (1), upper interfering layer two (6) adopts niobium pentaoxide, upper interfering layer two (6) top sputtering ITO film (9), lower interfering layer (8) below sputtering ITO film (9);
C, to the top glass substrate (1) after sputtering ITO film (9) and lower glass substrate (7), annealing in process is done: be first cooled to 200 degrees Celsius through surge chamber, heat again to 300 degrees Celsius stablize, complete the plated film to top glass substrate (1) and lower glass substrate (7).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510697129.7A CN105204691B (en) | 2015-10-19 | 2015-10-19 | A kind of touch screen single side disappears the processing method of shadow electro-conductive glass |
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| CN201510697129.7A CN105204691B (en) | 2015-10-19 | 2015-10-19 | A kind of touch screen single side disappears the processing method of shadow electro-conductive glass |
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| CN105204691B CN105204691B (en) | 2018-08-10 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106095212A (en) * | 2016-08-09 | 2016-11-09 | 洛阳康耀电子有限公司 | A kind of full impregnated touch screen disappears the processing method of shadow electro-conductive glass |
| CN106095213A (en) * | 2016-08-09 | 2016-11-09 | 洛阳康耀电子有限公司 | A kind of half-reflection and half-transmission touch screen disappears the processing method of shadow electro-conductive glass |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103218102A (en) * | 2013-05-10 | 2013-07-24 | 洛阳恒兆电子有限公司 | Method for machining double-sided coated glass for capacitive screen and double-sided coated glass |
| CN104205021A (en) * | 2012-03-30 | 2014-12-10 | 应用材料公司 | Transparent body for use in a touch screen panel manufacturing method and system |
| US20150109234A1 (en) * | 2013-10-18 | 2015-04-23 | Applied Materials, Inc. | Transparent body for a touch panel manufacturing method and system for manufacturing a transparent body for a touch screen panel |
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- 2015-10-19 CN CN201510697129.7A patent/CN105204691B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104205021A (en) * | 2012-03-30 | 2014-12-10 | 应用材料公司 | Transparent body for use in a touch screen panel manufacturing method and system |
| CN103218102A (en) * | 2013-05-10 | 2013-07-24 | 洛阳恒兆电子有限公司 | Method for machining double-sided coated glass for capacitive screen and double-sided coated glass |
| US20150109234A1 (en) * | 2013-10-18 | 2015-04-23 | Applied Materials, Inc. | Transparent body for a touch panel manufacturing method and system for manufacturing a transparent body for a touch screen panel |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106095212A (en) * | 2016-08-09 | 2016-11-09 | 洛阳康耀电子有限公司 | A kind of full impregnated touch screen disappears the processing method of shadow electro-conductive glass |
| CN106095213A (en) * | 2016-08-09 | 2016-11-09 | 洛阳康耀电子有限公司 | A kind of half-reflection and half-transmission touch screen disappears the processing method of shadow electro-conductive glass |
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