CN105197983B - 采用化学气相沉积法制备Zn掺杂p型β‑Ga2O3纳米线的方法 - Google Patents
采用化学气相沉积法制备Zn掺杂p型β‑Ga2O3纳米线的方法 Download PDFInfo
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- CN105197983B CN105197983B CN201510453146.6A CN201510453146A CN105197983B CN 105197983 B CN105197983 B CN 105197983B CN 201510453146 A CN201510453146 A CN 201510453146A CN 105197983 B CN105197983 B CN 105197983B
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000002070 nanowire Substances 0.000 title claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 9
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 title abstract description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000001301 oxygen Substances 0.000 claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 37
- 229910052786 argon Inorganic materials 0.000 claims abstract description 36
- 239000010453 quartz Substances 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000008020 evaporation Effects 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000012159 carrier gas Substances 0.000 claims abstract description 12
- 239000011701 zinc Substances 0.000 claims description 47
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 40
- 229910052725 zinc Inorganic materials 0.000 claims description 38
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 36
- 229910052733 gallium Inorganic materials 0.000 claims description 36
- 239000003863 metallic catalyst Substances 0.000 claims description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- 239000000428 dust Substances 0.000 claims description 23
- 239000000843 powder Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 239000011812 mixed powder Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 239000007789 gas Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract 3
- 239000003054 catalyst Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000001000 micrograph Methods 0.000 description 18
- 239000000126 substance Substances 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 239000012071 phase Substances 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 239000002086 nanomaterial Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 239000007792 gaseous phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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CN201510453146.6A CN105197983B (zh) | 2015-07-29 | 2015-07-29 | 采用化学气相沉积法制备Zn掺杂p型β‑Ga2O3纳米线的方法 |
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CN201510453146.6A CN105197983B (zh) | 2015-07-29 | 2015-07-29 | 采用化学气相沉积法制备Zn掺杂p型β‑Ga2O3纳米线的方法 |
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CN105197983A CN105197983A (zh) | 2015-12-30 |
CN105197983B true CN105197983B (zh) | 2017-03-22 |
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CN201510453146.6A Expired - Fee Related CN105197983B (zh) | 2015-07-29 | 2015-07-29 | 采用化学气相沉积法制备Zn掺杂p型β‑Ga2O3纳米线的方法 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106115771A (zh) * | 2016-06-14 | 2016-11-16 | 南京大学 | 一种In2O3多面体微米晶的制备方法 |
CN106409963B (zh) * | 2016-09-21 | 2018-06-15 | 浙江理工大学 | 一种Zn:Ga2O3薄膜基MSM结构日盲紫外光电探测器及其制备方法 |
CN109384258B (zh) * | 2018-12-17 | 2021-01-05 | 辽宁师范大学 | 采用化学气相沉积法生长β-Ga2O3微米线的方法 |
CN109813760A (zh) * | 2019-02-28 | 2019-05-28 | 江苏理工学院 | 一种氧化锌纳米线气体传感器及其制备方法 |
CN109957759A (zh) * | 2019-05-13 | 2019-07-02 | 北京镓族科技有限公司 | Cu掺杂β-Ga2O3薄膜的制备方法及相应的结构 |
CN110217815A (zh) * | 2019-07-10 | 2019-09-10 | 合肥工业大学 | 一种无催化剂生长β-Ga2O3纳米线的方法 |
CN110429147A (zh) * | 2019-08-01 | 2019-11-08 | 上海芯物科技有限公司 | 一种金属氧化物合金纳米线、及其制备方法和用途 |
CN110923665B (zh) * | 2019-11-27 | 2021-08-24 | 太原理工大学 | 一种具有择优取向的Ga2O3和SnO2混相膜的制备方法 |
CN112850780B (zh) * | 2021-01-08 | 2022-11-08 | 辽宁师范大学 | 磷掺杂β-Ga2O3微米线的制备方法 |
CN114291839B (zh) * | 2022-01-07 | 2024-02-02 | 辽宁师范大学 | 一种低成本超细β-Ga2O3纳米线的制备方法 |
CN115636435A (zh) * | 2022-09-05 | 2023-01-24 | 西安邮电大学 | 一种由锌、镓和氧组成的化合物的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004182547A (ja) * | 2002-12-04 | 2004-07-02 | National Institute For Materials Science | 酸化ガリウムナノワイヤーとその製造方法 |
CN101993110A (zh) * | 2010-11-14 | 2011-03-30 | 青岛理工大学 | 一种微波水热法制备β-氧化镓的方法 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004182547A (ja) * | 2002-12-04 | 2004-07-02 | National Institute For Materials Science | 酸化ガリウムナノワイヤーとその製造方法 |
CN101993110A (zh) * | 2010-11-14 | 2011-03-30 | 青岛理工大学 | 一种微波水热法制备β-氧化镓的方法 |
Non-Patent Citations (1)
Title |
---|
β-Ga2O3 nanowires: Synthesis, characterization, and p –channel field-effect transistor;Pai-Chun Chang et al.;《Applied Physics Letters》;20051121;第87卷;第1页左栏第2段和右栏第2段 * |
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