CN105091788B - 自动实时快速检测晶片基底二维形貌的装置 - Google Patents
自动实时快速检测晶片基底二维形貌的装置 Download PDFInfo
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- CN105091788B CN105091788B CN201410188236.2A CN201410188236A CN105091788B CN 105091788 B CN105091788 B CN 105091788B CN 201410188236 A CN201410188236 A CN 201410188236A CN 105091788 B CN105091788 B CN 105091788B
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/255—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/245—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using a plurality of fixed, simultaneously operating transducers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Abstract
Description
Claims (14)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410188236.2A CN105091788B (zh) | 2014-05-06 | 2014-05-06 | 自动实时快速检测晶片基底二维形貌的装置 |
US16/319,322 US10731973B2 (en) | 2014-05-06 | 2014-08-19 | Apparatus for automatically and quickly detecting two-dimensional morphology for wafer substrate in real time |
PCT/CN2014/084684 WO2015169007A1 (zh) | 2014-05-06 | 2014-08-19 | 自动实时快速检测晶片基底二维形貌的装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410188236.2A CN105091788B (zh) | 2014-05-06 | 2014-05-06 | 自动实时快速检测晶片基底二维形貌的装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105091788A CN105091788A (zh) | 2015-11-25 |
CN105091788B true CN105091788B (zh) | 2017-11-07 |
Family
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Family Applications (1)
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CN201410188236.2A Active CN105091788B (zh) | 2014-05-06 | 2014-05-06 | 自动实时快速检测晶片基底二维形貌的装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10731973B2 (zh) |
CN (1) | CN105091788B (zh) |
WO (1) | WO2015169007A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104697645B (zh) * | 2013-12-05 | 2017-11-03 | 北京智朗芯光科技有限公司 | 一种在线实时检测外延片温度的装置及方法 |
CN112735993B (zh) * | 2021-04-01 | 2022-01-18 | 中山德华芯片技术有限公司 | 一种晶圆表面温度探测器及其应用 |
CN114608482B (zh) * | 2022-05-11 | 2022-08-05 | 南昌昂坤半导体设备有限公司 | 曲率测量方法、系统、可读存储介质及计算机设备 |
Citations (5)
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---|---|---|---|---|
CN1403783A (zh) * | 2002-09-18 | 2003-03-19 | 清华大学 | 一种非球面镜顶点曲率半径测量方法及装置 |
EP1606577B1 (de) * | 2003-03-25 | 2008-10-15 | Gutehoffnungshütte Radsatz GmbH | Verfahren zur berührungslosen dynamischen erfassung des profils eines festkörpers |
CN101373134A (zh) * | 2008-10-24 | 2009-02-25 | 天津大学 | 一种线状激光窄带滤光psd热辐射板厚测量方法 |
CN102023068A (zh) * | 2010-10-10 | 2011-04-20 | 徐建康 | 薄膜应力测量设备及其测量方法 |
CN102620868A (zh) * | 2012-03-10 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 具有垂直光路结构的薄膜应力测量装置及其应用 |
Family Cites Families (17)
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JPH04340405A (ja) * | 1991-05-17 | 1992-11-26 | Fujitsu Ltd | 高さ検査装置 |
US5912738A (en) * | 1996-11-25 | 1999-06-15 | Sandia Corporation | Measurement of the curvature of a surface using parallel light beams |
US6618155B2 (en) * | 2000-08-23 | 2003-09-09 | Lmi Technologies Inc. | Method and apparatus for scanning lumber and other objects |
US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US7359045B2 (en) * | 2002-05-06 | 2008-04-15 | Applied Materials, Israel, Ltd. | High speed laser scanning inspection system |
US7570368B2 (en) * | 2004-05-12 | 2009-08-04 | Veeco Instruments Inc. | Method and apparatus for measuring the curvature of reflective surfaces |
US7452793B2 (en) * | 2005-03-30 | 2008-11-18 | Tokyo Electron Limited | Wafer curvature estimation, monitoring, and compensation |
US7505150B2 (en) * | 2005-05-13 | 2009-03-17 | Laytec Gmbh | Device and method for the measurement of the curvature of a surface |
EP2299236B1 (en) * | 2009-09-17 | 2013-04-10 | LayTec Aktiengesellschaft | Method and apparatus for real-time determination of curvature and azimuthal asymmetry of a surface |
EP2546600B1 (en) * | 2011-07-11 | 2014-07-30 | LayTec AG | Method and apparatus for real-time determination of spherical and non-spherical curvature of a surface |
CN103985652B (zh) * | 2013-02-07 | 2016-09-21 | 北京智朗芯光科技有限公司 | 一种晶片应力测量装置及测量方法 |
CN103985653B (zh) * | 2013-02-07 | 2017-03-08 | 北京智朗芯光科技有限公司 | 一种晶片应力测量方法 |
KR102225232B1 (ko) * | 2014-07-30 | 2021-03-08 | 유우겐가이샤 와이시스템즈 | 표면 형상의 측정방법 및 측정장치 |
TWI506242B (zh) * | 2014-12-12 | 2015-11-01 | Ind Tech Res Inst | 薄膜曲率量測裝置及其方法 |
US9921152B2 (en) * | 2016-01-15 | 2018-03-20 | Kla-Tencor Corporation | Systems and methods for extended infrared spectroscopic ellipsometry |
TWI624643B (zh) * | 2016-08-19 | 2018-05-21 | 財團法人工業技術研究院 | 一種薄膜曲率量測裝置及其方法 |
US10690602B2 (en) * | 2017-02-17 | 2020-06-23 | Kla-Tencor Corporation | Methods and systems for measurement of thick films and high aspect ratio structures |
-
2014
- 2014-05-06 CN CN201410188236.2A patent/CN105091788B/zh active Active
- 2014-08-19 US US16/319,322 patent/US10731973B2/en active Active
- 2014-08-19 WO PCT/CN2014/084684 patent/WO2015169007A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1403783A (zh) * | 2002-09-18 | 2003-03-19 | 清华大学 | 一种非球面镜顶点曲率半径测量方法及装置 |
EP1606577B1 (de) * | 2003-03-25 | 2008-10-15 | Gutehoffnungshütte Radsatz GmbH | Verfahren zur berührungslosen dynamischen erfassung des profils eines festkörpers |
CN101373134A (zh) * | 2008-10-24 | 2009-02-25 | 天津大学 | 一种线状激光窄带滤光psd热辐射板厚测量方法 |
CN102023068A (zh) * | 2010-10-10 | 2011-04-20 | 徐建康 | 薄膜应力测量设备及其测量方法 |
CN102620868A (zh) * | 2012-03-10 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 具有垂直光路结构的薄膜应力测量装置及其应用 |
Also Published As
Publication number | Publication date |
---|---|
CN105091788A (zh) | 2015-11-25 |
WO2015169007A1 (zh) | 2015-11-12 |
US20190162527A1 (en) | 2019-05-30 |
US10731973B2 (en) | 2020-08-04 |
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