CN104697645B - 一种在线实时检测外延片温度的装置及方法 - Google Patents
一种在线实时检测外延片温度的装置及方法 Download PDFInfo
- Publication number
- CN104697645B CN104697645B CN201310651743.0A CN201310651743A CN104697645B CN 104697645 B CN104697645 B CN 104697645B CN 201310651743 A CN201310651743 A CN 201310651743A CN 104697645 B CN104697645 B CN 104697645B
- Authority
- CN
- China
- Prior art keywords
- epitaxial wafer
- mrow
- reaction chamber
- reflectivity
- chamber window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 63
- 238000002310 reflectometry Methods 0.000 claims abstract description 57
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 11
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 230000005457 Black-body radiation Effects 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910002804 graphite Inorganic materials 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000003379 elimination reaction Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0896—Optical arrangements using a light source, e.g. for illuminating a surface
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
- G01J5/53—Reference sources, e.g. standard lamps; Black bodies
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/58—Radiation pyrometry, e.g. infrared or optical thermometry using absorption; using extinction effect
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/80—Calibration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/80—Calibration
- G01J5/806—Calibration by correcting for reflection of the emitter radiation
Abstract
Description
Claims (6)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310651743.0A CN104697645B (zh) | 2013-12-05 | 2013-12-05 | 一种在线实时检测外延片温度的装置及方法 |
PCT/CN2014/084685 WO2015081728A1 (zh) | 2013-12-05 | 2014-08-19 | 一种在线实时检测外延片温度的装置及方法 |
US16/317,024 US10908024B2 (en) | 2013-12-05 | 2014-08-19 | Apparatus and method for online and real-time detection of temperature of epitaxial wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310651743.0A CN104697645B (zh) | 2013-12-05 | 2013-12-05 | 一种在线实时检测外延片温度的装置及方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104697645A CN104697645A (zh) | 2015-06-10 |
CN104697645B true CN104697645B (zh) | 2017-11-03 |
Family
ID=53272839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310651743.0A Active CN104697645B (zh) | 2013-12-05 | 2013-12-05 | 一种在线实时检测外延片温度的装置及方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10908024B2 (zh) |
CN (1) | CN104697645B (zh) |
WO (1) | WO2015081728A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104697645B (zh) * | 2013-12-05 | 2017-11-03 | 北京智朗芯光科技有限公司 | 一种在线实时检测外延片温度的装置及方法 |
CN105136310B (zh) * | 2015-09-06 | 2018-07-27 | 电子科技大学 | Mocvd外延片表面温度测量的紫外测温方法及装置 |
CN105506733A (zh) * | 2015-12-23 | 2016-04-20 | 圆融光电科技股份有限公司 | 外延生长设备 |
CN107611049B (zh) * | 2017-09-18 | 2019-10-01 | 佛山科学技术学院 | 一种基于实时光谱的外延片多参数原位监测方法和装置 |
KR101990793B1 (ko) * | 2019-01-17 | 2019-06-19 | 대한민국 | 수산물양식을 위한 스마트 수질측정시스템 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0708318A1 (en) * | 1994-10-17 | 1996-04-24 | International Business Machines Corporation | Radiance measurement by angular filtering for use in temperature determination of radiant object |
CN102455222A (zh) * | 2010-10-21 | 2012-05-16 | 甘志银 | 金属有机物化学气相沉积设备中实时测量薄膜温度的方法及测量装置 |
CN102620833A (zh) * | 2011-02-01 | 2012-08-01 | 田乃良 | 红外测温方法和红外测温系统 |
CN103411684A (zh) * | 2013-07-17 | 2013-11-27 | 中微半导体设备(上海)有限公司 | 测量反应腔室内薄膜温度的方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USH1264H (en) * | 1988-04-04 | 1993-12-07 | Xerox Corporation | Method of in situ stoiciometric and geometrical photo induced modifications to compound thin films during epitaxial growth and applications thereof |
JP2554735B2 (ja) * | 1989-02-14 | 1996-11-13 | 日本電信電話株式会社 | 基板表面温度の測定方法およびそれを利用した半導体薄膜の結晶成長法と成長装置 |
JP2007088420A (ja) * | 2005-08-25 | 2007-04-05 | Sharp Corp | 半導体発光素子の製造方法 |
CN101906622B (zh) * | 2010-08-20 | 2013-03-20 | 江苏中晟半导体设备有限公司 | 用于mocvd系统中控制外延片温度及均匀性的装置与方法 |
CN102879125A (zh) * | 2011-07-15 | 2013-01-16 | 光达光电设备科技(嘉兴)有限公司 | 原位温度测试装置及方法 |
CN103389170B (zh) * | 2012-05-07 | 2015-08-19 | 中微半导体设备(上海)有限公司 | 一种真空处理装置的基片温度测量方法和装置 |
CN102778295B (zh) * | 2012-08-21 | 2014-05-28 | 南昌黄绿照明有限公司 | 在线测量发光二极管外延片光致发光光谱装置 |
CN104697645B (zh) * | 2013-12-05 | 2017-11-03 | 北京智朗芯光科技有限公司 | 一种在线实时检测外延片温度的装置及方法 |
CN104697639B (zh) * | 2013-12-06 | 2018-12-07 | 北京智朗芯光科技有限公司 | 一种mocvd设备实时测温系统自校准装置及方法 |
CN105091788B (zh) * | 2014-05-06 | 2017-11-07 | 北京智朗芯光科技有限公司 | 自动实时快速检测晶片基底二维形貌的装置 |
-
2013
- 2013-12-05 CN CN201310651743.0A patent/CN104697645B/zh active Active
-
2014
- 2014-08-19 WO PCT/CN2014/084685 patent/WO2015081728A1/zh active Application Filing
- 2014-08-19 US US16/317,024 patent/US10908024B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0708318A1 (en) * | 1994-10-17 | 1996-04-24 | International Business Machines Corporation | Radiance measurement by angular filtering for use in temperature determination of radiant object |
CN102455222A (zh) * | 2010-10-21 | 2012-05-16 | 甘志银 | 金属有机物化学气相沉积设备中实时测量薄膜温度的方法及测量装置 |
CN102620833A (zh) * | 2011-02-01 | 2012-08-01 | 田乃良 | 红外测温方法和红外测温系统 |
CN103411684A (zh) * | 2013-07-17 | 2013-11-27 | 中微半导体设备(上海)有限公司 | 测量反应腔室内薄膜温度的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104697645A (zh) | 2015-06-10 |
US10908024B2 (en) | 2021-02-02 |
WO2015081728A1 (zh) | 2015-06-11 |
US20190346308A1 (en) | 2019-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104697645B (zh) | 一种在线实时检测外延片温度的装置及方法 | |
CN107611049B (zh) | 一种基于实时光谱的外延片多参数原位监测方法和装置 | |
CN104697639B (zh) | 一种mocvd设备实时测温系统自校准装置及方法 | |
Greppmair et al. | Measurement of the in-plane thermal conductivity by steady-state infrared thermography | |
Lazzez et al. | A Boubaker polynomials expansion scheme (BPES)-related protocol for measuring sprayed thin films thermal characteristics | |
Stiedl et al. | Auger electron spectroscopy and UV–Vis spectroscopy in combination with multivariate curve resolution analysis to determine the Cu2O/CuO ratios in oxide layers on technical copper surfaces | |
WO2019144974A1 (zh) | 一种氮化物外延生长过程中薄膜纵向温度场的测量装置及方法 | |
Ibdah et al. | Optical simulation of external quantum efficiency spectra of CuIn1− xGaxSe2 solar cells from spectroscopic ellipsometry inputs | |
CN104807754B (zh) | 一种监测晶片生长薄膜特性的装置 | |
Reichel et al. | Temperature measurement in rapid thermal processing with focus on the application to flash lamp annealing | |
CN105806819A (zh) | 一种基于纳米荧光显微高光谱成像技术的多种食源性微生物同时检测方法 | |
CN104697643B (zh) | 一种在线实时检测外延片温度的方法 | |
Wang et al. | Theoretical and experimental study on the heat transport in metallic nanofilms heated by ultra-short pulsed laser | |
CN104701200B (zh) | 一种在线实时检测外延片温度的装置 | |
CN104697637B (zh) | 一种薄膜生长的实时测温方法 | |
CN104697666B (zh) | 一种mocvd反应腔测温方法 | |
Shi et al. | A new experimental apparatus for measurement of spectral emissivity of opaque materials using a reflector as the dummy light source | |
JPH05149720A (ja) | 酸化物超電導膜の検査方法および検査装置 | |
CN104807495B (zh) | 一种监测晶片生长薄膜特性的装置及其用途 | |
Riech et al. | Evaluation of thin films intermixing by photoacoustic spectroscopy | |
CN110376136A (zh) | 高温加载下测量薄膜光学常数及形貌参数的装置及方法 | |
CN104697638B (zh) | 一种mocvd设备实时测温系统自校准方法 | |
Gozhyk et al. | Plasma emission correction in reflectivity spectroscopy during sputtering deposition | |
Chen et al. | The measurement and modeling investigation on the BRDF of brass under variable temperature | |
Azarov et al. | Polarization pyrometry of layered semiconductor structures under conditions of low-temperature technological processes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 102206 Beijing City, Changping District Changping Road No. 97 Xinyuan Science Park B building room 503 Applicant after: BEI OPTICS TECHNOLOGY Co.,Ltd. Address before: 100191, Beijing, Zhichun Road, Haidian District No. 27 quantum core 402 room Applicant before: BEI OPTICS TECHNOLOGY Co.,Ltd. |
|
CB03 | Change of inventor or designer information |
Inventor after: Yan Dong Inventor after: Ma Tiezhong Inventor after: Wang Linzi Inventor after: Liu Jianpeng Inventor before: Yan Dong Inventor before: Li Chengmin Inventor before: Wang Linzi Inventor before: Liu Jianpeng Inventor before: Ye Longmao |
|
COR | Change of bibliographic data | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190709 Address after: Room 503, Block B, Xinyuan Science Park, 97 Changping Road, Changping District, Beijing 102206 Patentee after: Ongkun Vision (Beijing) Technology Co.,Ltd. Address before: Room 503, Block B, Xinyuan Science Park, 97 Changping Road, Changping District, Beijing 102206 Patentee before: BEI OPTICS TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20230627 Address after: B701, Building 8, No. 97, Changping Road, Shahe Town, Changping District, Beijing 102200 (Changping Demonstration Park) Patentee after: Beijing Airui Haotai Information Technology Co.,Ltd. Address before: Room 503, Block B, Xinyuan Science Park, 97 Changping Road, Changping District, Beijing 102206 Patentee before: Ongkun Vision (Beijing) Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |