WO2015169007A1 - 自动实时快速检测晶片基底二维形貌的装置 - Google Patents

自动实时快速检测晶片基底二维形貌的装置 Download PDF

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Publication number
WO2015169007A1
WO2015169007A1 PCT/CN2014/084684 CN2014084684W WO2015169007A1 WO 2015169007 A1 WO2015169007 A1 WO 2015169007A1 CN 2014084684 W CN2014084684 W CN 2014084684W WO 2015169007 A1 WO2015169007 A1 WO 2015169007A1
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Prior art keywords
wafer substrate
substrate
incident
light
reflected
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PCT/CN2014/084684
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English (en)
French (fr)
Inventor
刘健鹏
张塘
李成敏
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北京智朗芯光科技有限公司
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Priority to US16/319,322 priority Critical patent/US10731973B2/en
Publication of WO2015169007A1 publication Critical patent/WO2015169007A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/255—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/245—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using a plurality of fixed, simultaneously operating transducers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Definitions

  • the present invention relates to the field of non-destructive testing of semiconductor materials, and more particularly to an apparatus for automatically and automatically detecting the two-dimensional topography of a wafer substrate in real time. Background technique
  • the main process for producing LEDs today is the use of metal organic chemical vapor deposition (MOCVD).
  • MOCVD metal organic chemical vapor deposition
  • the method is to grow a quantum well film on a sapphire substrate at a number of higher temperatures.
  • the size of the substrate limits the efficiency of LED production.
  • the current mature technology is to grow quantum well films on 2-inch substrates. If the size of the sapphire substrate is increased from 2 inches to 6 inches, LED productivity will increase by 30%.
  • the thermal expansion coefficients of the quantum well film and the sapphire substrate are inconsistent, when the size of the sapphire substrate is increased, the large-sized sapphire substrate is significantly deformed at a high temperature growth. This obvious deformation causes the sapphire substrate to not completely contact the graphite disk, resulting in uneven temperature distribution of the sapphire substrate.
  • the maximum temperature difference can reach 10 ° C.
  • the difference in temperature will eventually lead to the growth of quantum slabs at different positions on the sapphire substrate.
  • the spectrum of the radiation is different, and the spectral difference that can be caused according to the temperature difference reaches 14 nm. This pair of LED lighting is unacceptable.
  • there are many methods for detecting the two-dimensional shape of the sapphire substrate but only the laser macroscopic deformation analysis method can be used for real-time rapid detection of the two-dimensional shape of the sapphire substrate.
  • the method uses two parallel laser beams of known distance to strike the surface of the sapphire substrate. Due to the different surface types of the sapphire substrate, the reflection angles of the two laser beams are different. At a known distance from the point of incidence of the laser The two lasers are respectively received by a CCD, and the CCD can acquire the positions of the two laser spots. The image processing method is used to obtain the distance D between the two spots, and then the curvature of the arc between the incident points of the two laser beams on the sapphire substrate can be calculated according to the distance d before the two lasers are incident and the distance Z from the incident point. .
  • the present invention proposes an apparatus capable of automatically detecting a two-dimensional topography of a wafer substrate in real time in accordance with a sapphire substrate on a high speed rotating graphite disk.
  • the device for automatically detecting the two-dimensional shape of the wafer substrate in real time by the invention comprises a first operation module, a second operation module and an analysis module,
  • the first operation module calculates a curvature c x along the X direction of the substrate to be tested between any two incident points on the wafer substrate according to the position signals of the N spots.
  • the second operation module calculates a curvature C Y of any incident point on the wafer substrate in the Y direction of the substrate to be tested according to the position signals of the N spots,
  • N is a natural number of 3 or more, and the N spots are incident on the wafer substrate by the N laser beam in the radial direction of the wafer substrate, that is, the X direction, and then respectively reflected to the PSD corresponding to the incident light (position sensitive detection) Formed on the Position Sensitive Device),
  • the analysis module obtains a two-dimensional topography of the substrate according to the calculation results of the respective C x and C Y .
  • the device for automatically detecting the two-dimensional topography of the wafer substrate in real time by using the PSD is used as the photoelectric conversion device. With the movement of the substrate, it is possible to obtain any incident point on the wafer substrate in the Y direction of the substrate to be tested.
  • the curvature C Y can also obtain the curvature C x between the two spots in the direction along the incident light, that is, the X direction. According to the calculation results of the respective C x and C Y , the two-dimensional topography of the wafer substrate can be finally obtained.
  • FIG. 1 is a schematic diagram showing the relationship between modules of an apparatus for automatically detecting a two-dimensional topography of a wafer substrate in real time in real time according to the present invention
  • FIG. 2 is a schematic view showing an optical path of a first device for realizing an automatic real-time rapid detection of a two-dimensional topography of a wafer substrate provided by the present invention
  • FIG. 3 is a schematic view of a second device optical path for implementing an apparatus for automatically detecting a two-dimensional topography of a wafer substrate in real time in accordance with the present invention
  • FIG. 4 is a third apparatus for implementing the apparatus for automatically detecting the two-dimensional topography of a wafer substrate in an automatic real-time manner provided by the present invention, in which a mirror disposed in the light-passing aperture causes the optical path to be inverted 90. Schematic diagram of the light path. detailed description
  • an apparatus for automatically detecting a two-dimensional topography of a wafer substrate in an automatic real-time manner includes a first operation module, a second operation module, and an analysis module.
  • the first operation module calculates the curvature along the X direction of the substrate to be tested between any two incident points on the wafer substrate according to the position signals of the N spots.
  • the second operation module calculates the curvature C y of any incident point on the wafer substrate in the Y direction of the substrate to be tested according to the position signals of the N spots,
  • N is a natural number of 3 or more
  • the N spots are formed by the N laser beam incident on the wafer substrate in the radial direction of the wafer substrate, that is, the X direction, and then respectively reflected onto the PSD corresponding to the incident light, and the analysis module according to each The calculation results of C x and C Y obtain the two-dimensional morphology of the substrate.
  • the device for automatically detecting the two-dimensional topography of the wafer substrate in real time may further comprise a data collection module, wherein the data collection module is configured to collect the abscissa of each spot, and transmit the abscissa of each spot to the first operation module. And the second arithmetic module.
  • the abscissa of the spots does not require manual input, so that the apparatus for automatically detecting the two-dimensional shape of the wafer substrate in real time in the present invention is more automated.
  • the device for automatically detecting the two-dimensional shape of the wafer substrate in real time further comprises a data collection module, wherein the data collection module is configured to collect the horizontal and vertical coordinates of each spot, and the abscissa and the longitudinal direction of each spot.
  • the coordinates are respectively delivered to the first arithmetic module and the second operational module. Due to the introduction of the data collection module, the abscissa of each spot can be automatically delivered to the first operation module and the second operation module, thereby avoiding manual input, and the automation degree is higher and the accuracy is higher.
  • FIG. 1 For ease of understanding, Figure 1 only shows an optical path diagram of one of the spots.
  • an apparatus for rapidly detecting a two-dimensional topography of a wafer substrate in real time includes N PSD1, N-beam lasers and a first beam splitting element 4, wherein the N-beam lasers are arranged in a straight line, wherein N is 3 or more natural numbers, N PSD1 and N beam lasers - corresponding,
  • the N-beam laser is first directed to the 10th position of the first beam splitting element 4, and after passing through the first beam splitting element 4, incident light is formed, the incident light is incident on the wafer substrate, and N incident points are formed on the wafer substrate in the radial direction, and the incident light is incident. After being reflected by the substrate, N beams of the first reflected beam are formed, and each of the first reflected beams is transmitted through the first beam splitting element, and then incident on the PSD 1 corresponding to the N laser beams to form N spots.
  • the N-beam laser is emitted from the N first lasers 3, and the N first lasers 3 constitute a laser array.
  • N is a natural number of 5 or more, and when N is a natural number of 5 or more, the number of spots that can be formed also increases.
  • PSD B PSD C , PSD D , PSD E.
  • the plane reflection surface is used instead of the wafer for calibration, so that the laser beam is incident on the plane reflection surface and then reflected to the PSD A.
  • the abscissa of the spot formed by the laser beam is 1 ()
  • the laser beam is reflected on the plane reflection surface and then reflected on the PSD B.
  • the abscissa of the spot is JC 2 .
  • the abscissa of the spot formed by the first reflected beam transmitted through the first beam splitting element and projected onto the PSD A is JC u
  • the horizontal beam formed by the first reflected beam transmitted through the first beam splitting element and projected onto the PSD B is transversely formed.
  • the distance from PSD A to the substrate is y 10
  • the distance from PSD B to the epitaxial growth film substrate is y 20 .
  • the curvature in the direction along the incident light, i.e., the X direction, between any two incident points on the wafer substrate can be obtained separately.
  • 10 , 0 , dAB x ; yio and dAB x y 2 o need to be calibrated when calculating the curvature c x in the direction along the incident light, that is, the X direction, between any two incident points on the sample.
  • d AB - y 2 can be obtained.
  • ⁇ i AB ⁇ The true value at the time of detecting the substrate.
  • the sampling frequency of PSD1 be /, and the number of revolutions per minute of the graphite disk carrying the substrate is RPMA.
  • the slope of the ordinate of the spot on PSD1 is linearly fitted with time.
  • the calibration coefficient is ⁇ . Any one of the incident points can be calculated.
  • the curvature of the substrate in the Y direction is:
  • the calibration coefficient ⁇ needs to be calibrated when calculating the curvature of any incident point on the wafer substrate in the Y direction of the substrate to be tested.
  • a standard sample of known curvature is placed on the graphite disk, rotated at a hook speed, and the slope corresponding to the standard sample is measured, and the calibration coefficient ⁇ can be calculated.
  • ⁇ is a calibrated true value, system error is avoided.
  • the two-dimensional topography of the substrate to be tested can be determined.
  • the device for real-time rapid detection of the two-dimensional topography of the wafer substrate uses the PSD as the photoelectric conversion device, and as the substrate moves, both incident points on the wafer substrate can be obtained at the base to be tested.
  • the bottom movement direction that is, the curvature C Y in the Y direction
  • C Y in the Y direction can obtain the curvature c x between the two spots in the direction along the incident light, that is, the X direction.
  • the wafer base can be finally obtained.
  • the PSD data read frequency is F, so the total read frequency is F/15, and for the CCD, according to the pixels of the general CCD,
  • Figure 2 only shows an optical path diagram of one of the spots.
  • the device for detecting the two-dimensional topography of the wafer substrate in real time according to the second embodiment of the present invention is different from the device for detecting the two-dimensional shape of the wafer substrate in real time according to the first embodiment of the present invention, and further includes The second beam splitting element 14, and a temperature measuring device.
  • the N-beam laser is reflected by the first beam splitting element 4 and then incident on the second beam splitting element 14, passes through the second beam splitting element 14 to form incident light, and the incident light is incident on the wafer substrate, and N incidents are formed on the wafer substrate in the radial direction.
  • the incident light is reflected by the substrate to form an N-beam first reflected beam
  • each of the first reflected beams passes through the second beam splitting element 14 and the first beam splitting element 4, and is incident on the PSD1 corresponding to the N-beam laser to form N spots.
  • the temperature measuring device includes a laser emitting device, a third beam splitting element 17, and a laser receiving device.
  • the first parallel light emitted by the laser emitting device is transmitted through the third beam splitting element 17, and then transmitted through the second beam splitting element 14 to be directed to the wafer substrate. And reflected by the substrate to form a second reflected beam, the second After the reflected beam is transmitted through the second beam splitting element 14, it is reflected by the third beam splitting element 17 to form a second parallel beam, and the second parallel beam is received by the laser receiving device.
  • the device for detecting the two-dimensional topography of the wafer substrate in real time after adding the above components by the coupling action of the second beam splitting element 14, can detect the two-dimensional shape of the epitaxially grown film substrate in real time. It can also be used to quickly detect the temperature of the wafer epitaxial growth film substrate in real time, thereby obtaining the two-dimensional morphology of the substrate at different temperatures during wafer epitaxial growth, and providing data for finding the relationship between the morphology of the substrate and the temperature distribution of the substrate.
  • the laser emitting device comprises a second laser, an emitting fiber 15 and a first lens 16, and the transmitting fiber 15 is at the focus of the transmitting end of the first lens 16, so that the transmitting fiber 15
  • the emitted divergent light is refracted by the first lens 16 to become the first parallel light
  • the laser receiving device includes the second lens 18, the receiving fiber 19 and the detector, and the receiving fiber 19 At the focus of the receiving end of the second lens 18, the second parallel light is condensed by the second lens 18 and condensed to the receiving fiber 19 for detection by the detector.
  • the core diameter of the receiving fiber 19 is larger than the core diameter of the transmitting fiber 15. The larger the core diameter of the fiber, the greater the intensity of light that can be received. When the core diameter of the receiving fiber 19 is larger than the core diameter of the transmitting fiber, the receiving fiber It is ensured that the light obtained by refracting the second parallel beam through the second lens 18 can be completely received by the receiving fiber 19, so that the system stability is better.
  • the split ratio of the first beam splitting element 4 is 50% transmittance and 50% reflectance.
  • the reflected light obtained by the first beam splitting element 4 is light for incident on the substrate, and passes through the first beam splitting element 4 Transmitted light is used
  • the light projected onto the PSD1 is equally important for the first beam splitting element 4, and therefore, the first beam splitting element 4 needs to be designed to have a 50% transmittance and a 50% reflectance.
  • the split ratio of the second beam splitting element 14 is 92% transmittance and 8% reflectance.
  • the second beam splitting element is a medium coupled as a device for rapidly detecting the two-dimensional topography of the wafer substrate in real time and a device for detecting the temperature of the epitaxial growth film substrate of the wafer. Only the light incident on the substrate is strong enough to facilitate the collection of the black body heat radiation values P b ( ⁇ , 7 and the substrate heat radiation intensity L , T) of the substrate, thereby detecting the wafer epitaxial growth film substrate temperature. Therefore, the second beam splitting element 14 needs to be designed to have a transmittance of 92% and a reflectance of 8%.
  • the split ratio of the third beam splitting element 17 is 50% transmittance and 50% reflectance.
  • the third beam splitting element 17 is first used to transmit incident light for detecting the temperature of the epitaxial growth film substrate after transmitting the first parallel light beam, and is also used for reflecting the second reflected light to form a receivable.
  • the second parallel beam received by the optical fiber 19 is equally important for the third beam splitting element 17 to reflect and transmit. Therefore, the third beam splitting element 17 needs to be designed to have a 50% transmittance and a 50% reflectance.
  • the third beam splitting element 17 is a beam splitting prism or a beam splitting sheet.
  • the wavelength of the N-beam laser is selected from any of the wavelengths of all common semiconductor lasers such as 405 nm, 532 nm, 633 nm, and 650 nm, 780 nm, and 980 nm. Since the light corresponding to these wavelengths is mostly visible light, debugging of the laser is more convenient. Since the light emitted by the laser is visible light, the spot formed on the PSD1 is also the same as the wavelength of the visible light, that is, it is easier to find the position of the spot at this time, thereby making it easier to detect the two-dimensional topography of the film substrate by epitaxial growth.
  • the apparatus for automatically detecting the two-dimensional topography of the wafer substrate in real time may further include a third operation module, and the laser receiving device transmits the detected light intensity signal to the third operation module.
  • the third operation module calculates the real-time temperature of the wafer substrate based on the light intensity signal.
  • the distribution relationship between the two-dimensional topography of the wafer substrate and the real-time temperature of the wafer substrate is obtained.
  • the device for detecting the two-dimensional topography of the wafer substrate in real time according to the third embodiment of the present invention is different from the first embodiment and the second embodiment of the present invention in that the device for detecting the two-dimensional shape of the wafer substrate in real time according to the third embodiment of the present invention is provided.
  • the light-passing device may further comprise an optical path through which the incident light and the first reflected beam pass together, the light-passing device is provided with N light-passing holes, and the N light-passing holes correspond to the N-beam laser.
  • the light-passing holes are provided with mirrors 11 for inverting the direction of the corresponding passing beam by 90°, so that the corresponding PSD is turned to the other direction, thereby saving the space for placement.
  • Figure 3 only shows an optical path diagram of one of the spots.
  • the light beams emitted by the first lasers 3 in the laser array are reflected by the first beam splitting element 4 and then incident on the mirror 11, which is reflected by the mirror 11 to form incident light, and the incident light is incident on the wafer substrate.
  • N incident points are formed on the wafer substrate in the radial direction, and the incident light to the bottom is reflected to form an N-beam first reflected beam, and each of the first reflected beams is reflected by the mirror 11 and then transmitted through the first beam splitting element 4. Thereafter, it is incident on the PSD 1 corresponding to each of the first lasers 3 to form N spots.
  • the mirror 11 can function to change the optical path, and the structure of the device for quickly detecting the two-dimensional shape of the wafer substrate in real time provided by the second embodiment of the present invention can be made more compact.

Abstract

一种自动实时快速检测晶片基底二维形貌的装置。包括第一运算模块、第二运算模块和分析模块，第一运算模块根据N个光斑的位置信号，计算晶片基底上任意两个入射点之间在待测基底沿X方向的曲率C X，第二运算模块根据N个光斑的位置信号，计算晶片基底上任意一个入射点在待测基底移动方向即Y方向的曲率C Y，其中，N为3以上的自然数，N个光斑是由N束激光沿晶片基底径向即X方向入射到晶片基底后又分别反射到与入射光一一对应的PSD上形成的，分析模块根据各C X、C Y的计算结果，得到基底的二维形貌。该装置能够与高速旋转的石墨盘上的蓝宝石基底相适应。

Description

自动实时快速检测晶片基底二维形貌的装置
技术领域
本发明涉及半导体材料无损检测技术领域，特别涉及一种自动自动实时快 速检测晶片基底二维形貌的装置。 背景技术
目前生产 LED 的主要工艺是釆用金属有机化合物化学气相沉淀 ( MOCVD )的方法。 该方法是在某几个较高温度下， 在蓝宝石基底上生长量 子阱薄膜。 基底的尺寸限制了 LED的生产效率， 目前成熟的技术是在 2英寸 基底上生长量子阱薄膜。如果蓝宝石基底的尺寸从 2英寸提高到 6英寸， LED 生产率将提高 30%。然而，由于量子阱薄膜与蓝宝石基底的热膨胀系数不一致， 当蓝宝石基底的尺寸增大时，导致高温生长时大尺寸的蓝宝石基底发生明显形 变。这种明显的形变导致蓝宝石基底不能完全与石墨盘接触，使蓝宝石基底的 出现温度分布不均的现象， 温度最大差异能够达到 10°C， 温度的差异最终会 导致蓝宝石基底不同位置生长的量子阱所辐射的光谱不同，根据温度差异能够 导致的光谱差异达到 14nm。 这对 LED照明是不能接受的。 为了获得均匀厚度 的量子阱薄膜， 就需要研究蓝宝石基底的二维形貌， 并确定该二维形貌与蓝宝 石基底温度分布的数值关系。目前，可以检测蓝宝石基底二维形貌的方法很多， 但能用于实时快速检测蓝宝石基底二维形貌的只有激光宏观变形分析法。该方 法是用两束已知距离的平行的激光射在蓝宝石基底表面，由于该蓝宝石基底表 面面型不同， 这两束激光的反射角度就不同。在离激光入射点某一已知距离处 分别用一 CCD接收这两束激光， CCD就可以获取两束激光光斑的位置。 利用 图像处理方法获取两束光斑的距离 D，再根据两束激光入射前的距离 d和入射 点距 CCD的距离 Z就可以计算出两束激光在蓝宝石基底上的入射点间的圓弧 的曲率。
然而， MOCVD 工艺中， 随着承载晶片外延薄膜生长的基底的石墨盘转 速的提高， 量子阱薄膜的生长率有了较大幅度的提高， 而由于 CCD最小积分 时间和读取速度的限制， 目前基于 CCD的检测技术在检测高速旋转的石墨盘 上的蓝宝石基底已经略显不足。 发明内容
为了解决上述问题，本发明提出了一种能够与高速旋转的石墨盘上的蓝宝 石基底相适应的自动实时快速检测晶片基底二维形貌的装置。
本发明提供的自动实时快速检测晶片基底二维形貌的装置包括第一运算 模块、 第二运算模块和分析模块，
所述第一运算模块根据 N个光斑的位置信号， 计算晶片基底上任意两个 入射点之间在待测基底沿 X方向的曲率 cx，
所述第二运算模块根据 N个光斑的位置信号， 计算晶片基底上任意一个 入射点在待测基底移动方向即 Y方向的曲率 CY,
其中， N为 3以上的自然数， 所述 N个光斑是由 N束激光沿晶片基底径 向即 X方向入射到晶片基底后又分别反射到与所述入射光——对应的 PSD (位 置灵敏探测器 Position Sensitive Device)上形成的，
所述分析模块根据各所述 Cx、 CY的计算结果， 得到基底的二维形貌。 本发明提供的自动实时快速检测晶片基底二维形貌的装置釆用 PSD作为 光电转换器件， 随着基底的移动， 既可以获得晶片基底上任意一个入射点在待 测基底移动方向即 Y方向的曲率 CY, 又可以获得两光斑之间在沿入射光排列 方向即 X方向的曲率 Cx， 根据各 Cx、 CY的计算结果， 最终可以得到晶片基 底的二维形貌。 由于 PSD是基于硅光电二极管制成， 所以光电转换是实时的， 因此本方案的数据读出速度取决于数据釆集卡的读出速度。以沿入射光排列方 向有 5个测试点为例， 对于同样的电路， PSD数据读出频率为 F， 所以总的读 出频率是 F/15， 而对于 CCD， 根据一般 CCD的像素， 欲达到 PSD的效果， 最少也需要 512 512=262144， 所以基于 CCD的读出频率是 F/262144, 所以 理论上 PSD方案的数据读出速度是 CCD方案的数据读出速度的 17476倍。能 够与高速旋转的石墨盘上的蓝宝石基底相适应。 附图说明
图 1 为本发明提供的自动实时快速检测晶片基底二维形貌的装置各模块 之间的关系示意图；
图 2 为用于实现本发明提供的自动实时快速检测晶片基底二维形貌的装 置的第一种装置光路示意图；
图 3 为用于实现本发明提供的自动实时快速检测晶片基底二维形貌的装 置的第二种装置光路示意图；
图 4 为用于实现本发明提供的自动实时快速检测晶片基底二维形貌的装 置的第三种装置中， 当通光孔内设置的反射镜使得光路翻转 90。 时的光路示 意图。 具体实施方式
为了深入了解本发明， 下面结合附图及具体实施例对本发明进行详细说 明。
参见附图 1， 本发明提供的自动实时快速检测晶片基底二维形貌的装置包 括第一运算模块、 第二运算模块和分析模块，
第一运算模块根据 N个光斑的位置信号， 计算晶片基底上任意两个入射 点之间在待测基底沿 X方向的曲率 Q
第二运算模块根据 N个光斑的位置信号， 计算晶片基底上任意一个入射 点在待测基底移动方向即 Y方向的曲率 Cy，
其中， N为 3以上的自然数， N个光斑是由 N束激光沿晶片基底径向即 X 方向入射到晶片基底后又分别反射到与入射光——对应的 PSD上形成的， 分析模块根据各 Cx、 CY的计算结果， 得到基底的二维形貌。
其中，该自动实时快速检测晶片基底二维形貌的装置还可以包括数据釆集 模块，数据釆集模块用于釆集各光斑的横坐标， 并将各光斑的横坐标输送到第 一运算模块和第二运算模块。 从而， 个光斑的横坐标无需人工输入， 使得本发 明提供的自动实时快速检测晶片基底二维形貌的装置自动化程度更高。
其中，本发明提供的自动实时快速检测晶片基底二维形貌的装置还包括数 据釆集模块， 数据釆集模块用于釆集各光斑的横、 纵坐标， 并将各光斑的横坐 标和纵坐标分别输送到第一运算模块和第二运算模块。由于该数据釆集模块的 引入，各光斑的横坐标可以自动输送到第一运算模块和第二运算模块，避免了 人工输入， 自动化程度更高且准确率更高。
实施例一 为了便于理解， 附图 1仅给出了其中一个光斑的光路图。
参见附图 1， 本发明实施例一提供的实时快速检测晶片基底二维形貌的装 置包括 N个 PSD1， N束激光和第一分光元件 4， N束激光沿直线排布， 其中， N为 3以上的自然数， N个 PSD1与 N束激光——对应，
N束激光首先射向第一分光元件 4的 10位置， 经过第一分光元件 4后形 成入射光， 入射光入射到晶片基底上， 并在晶片基底上沿径向形成 N个入射 点， 入射光被基底反射后形成 N束第一种反射光束， 各第一种反射光束经过 第一分光元件透射后， 入射到与 N束激光相对应的 PSD1上， 形成 N个光斑。
其中， 作为 N束激光的一种具体的形成方式， N束激光由 N个第一种激 光器 3射出， N个第一种激光器 3构成的激光器阵列。
其中， N为 5以上的自然数， 当 N为 5以上的自然数时， 可以形成的光 斑的数量也增大。
为了便于理解， 仅以 N=5为例说明晶片外延生长薄膜基底二维形貌的检 测方法如下：
N=5时，形成五个光斑 A、 B、 C、 D、 E，其各自对应的 PSD分别为 PSDA、
PSDB、 PSDC、 PSDD、 PSDE。
先用平面反射面代替晶片进行校准， 令激光射到平面反射面后又反射到 PSDA上形成的光斑的横坐标为 1()， 激光射到平面反射面后又反射到 PSDB上 形成的光斑的横坐标为 JC2。， 第一种反射光束经过第一分光元件透射后投射到 PSDA上形成的光斑的横坐标为 JCu， 第一种反射光束经过第一分光元件透射后 投射到 PSDB上形成的光斑的横坐标为 JC21， dAB= JC2。- JC1()， PSDA到基底的距离 为 y10， PSDB到晶片外延生长薄膜基底的距离为 y20， 根据上述各参数包括 10、 20、 11、 21、 ^10、 yiO和 dAB， 可以计算得到在 光斑 A和 B之间， 在入射光排列方向， 即 X方向的曲率为：
Q _ ( _ ·½) ) (- ^11 ~ -^IQ)
2. dAB · y20 2 · dAB · yl0
以此类推，即可以分别得到在晶片基底上任意两个入射点之间在沿入射光 排列方向即 X方向的曲率。
另外， 计算样品上任意两个入射点之间在沿入射光排列方向， 即 X方向 的曲率 cx时， 10、 0、 dAB x ;yio和 dAB x y2o需要校准。 此时， 可以在用于承 载待测基底的石墨盘上首先放置一平面反射镜（cx=o， cy=o )，即可以得到 JC10、 0的值， 然后再依次放置两片已知曲率 Cx的反射镜进行校准， 又可以得到 dAB - y2。和 <iAB · 。在检测基底时的真值。 检测时， 由于 1()、 。、 dAB · 0和 dAB ·； y1()都是经过校准得到的真值， 避免了系统误差的产生。
令 PSD1的釆样频率为 /，承载基底的石墨盘每分钟转数为 RPMA是 PSD1 上光斑的纵坐标随时间变化按线性拟合的斜率，校准系数为 ^ 可以计算得到 任意一个入射点在待测基底移动方向即 Y方向的曲率为：
CY L ^^。
π RPM · a
另外， 在计算得到晶片基底上任意一个入射点在待测基底移动方向即 Y 方向的曲率时， 校准系数 α需要校准。 此时， 将一片已知曲率的标准样品放在 石墨盘上， 以勾速旋转， 测量得到该标准样品对应的斜率 ， 就可以计算出校 准系数 α。 检测时， 由于 α是经过校准得到的真值， 避免了系统误差的产生。
根据上述各 Cx和各 Cy数据即可判断待测基底的二维形貌。
本发明提供的实时快速检测晶片基底二维形貌的装置釆用 PSD作为光电 转换器件， 随着基底的移动， 既可以获得晶片基底上任意一个入射点在待测基 底移动方向即 Y方向的曲率 CY, 又可以获得两光斑之间在沿入射光排列方向 即 X方向的曲率 cx， 根据各 cx、 CY的计算结果， 最终可以得到晶片基底的 二维形貌。 由于 PSD是基于硅光电二极管制成， 所以光电转换是实时的， 因 此本方案的数据读出速度取决于数据釆集卡的读出速度。以沿入射光排列方向 有 5个测试点为例， 对于同样的电路， PSD数据读出频率为F， 所以总的读出 频率是 F/15， 而对于 CCD， 根据一般 CCD的像素， 欲达到 PSD的效果， 最 少也需要 512 512=262144， 所以基于 CCD的读出频率是 F/262144, 所以理 论上 PSD方案的数据读出速度是 CCD方案的数据读出速度的 17476倍。能够 与高速旋转的石墨盘上的蓝宝石基底相适应。
实时例二
为了便于理解， 附图 2仅给出了其中一个光斑的光路图。
参见附图 2， 本发明实施例二提供的实时快速检测晶片基底二维形貌的 装置与本发明实施例一提供的实时快速检测晶片基底二维形貌的装置的不同 之处在于， 还包括第二分光元件 14， 以及温度测量装置。 N束激光经过第一 分光元件 4反射后入射到第二分光元件 14， 经过第二分光元件 14后形成入射 光， 入射光入射到晶片基底上， 并在晶片基底上沿径向形成 N个入射点， 入 射光被基底反射后形成 N束第一种反射光束， 各第一种反射光束经过第二分 光元件 14和第一分光元件 4后， 入射到与 N束激光相对应的 PSD1上， 形成 N个光斑。
温度测量装置包括激光发射装置， 第三分光元件 17， 激光接收装置， 激 光发射装置发出的第一平行光经过第三分光元件 17透射后， 又经过第二分光 元件 14透射后， 射向晶片基底并被基底反射后形成第二种反射光束， 第二种 反射光束经过第二分光元件 14透射后， 又经过第三分光元件 17反射后形成第 二平行光束， 第二平行光束被激光接收装置接收。
本发明实施例二提供的实时快速检测晶片基底二维形貌的装置借助第二 分光元件 14的耦合作用增设了上述各元件之后， 除能够实时快速检测晶片外 延生长薄膜基底二维形貌之外，还能够用于实时快速检测晶片外延生长薄膜基 底的温度，从而得到晶片外延生长过程中不同温度下的基底二维形貌， 为寻找 基底的形貌与基底的温度分布关系提供数据。
其中，作为激光发射装置的一种具体的实现方式， 激光发射装置包括第二 种激光器、 发射光纤 15和第一透镜 16， 发射光纤 15处于第一透镜 16的发射 端焦点上，使得发射光纤 15发射出的发散光经过第一透镜 16的折射后成为第 一平行光； 作为激光接收装置的一种具体的实现方式， 激光接收装置包括第二 透镜 18、 接收光纤 19和探测器， 接收光纤 19处于第二透镜 18接收端的焦点 上， 使得第二平行光经过第二透镜 18的折射后汇聚至接收光纤 19， 便于探测 器的探测。
其中， 接收光纤 19的芯径大于发射光纤 15的芯径， 光纤芯径越大， 能够 接收的光的光强就越大， 当接收光纤 19的芯径大于发射光纤的芯径时， 接收 光纤能够保证第二平行光束经过第二透镜 18折射后得到的光能够完全被接收 光纤 19接收， 从而， 系统稳定性更好。
此外，
第一分光元件 4的分光比是 50%透射率和 50%反射率。 在本发明实施例 一 ~二提供的实时快速检测晶片基底二维形貌的装置中， 经过第一分光元件 4 得到的反射光是用于入射到基底的光，而经过第一分光元件 4的透射光是用于 投射到 PSDl上的光， 对第一分光元件 4而言， 反射和透射作用同样重要， 因 此， 第一分光元件 4需要设计成 50%透射率和 50%反射率。
第二分光元件 14的分光比是 92%透射率和 8%反射率。 在本发明实施例 二中，第二分光元件是作为将实时快速检测晶片基底二维形貌的装置与检测晶 片外延生长薄膜基底温度的装置耦合的媒介，在检测晶片外延生长薄膜基底温 度时， 只有入射到基底的光线足够强， 才能有利于釆集基底的黑体热辐射值 Pb ( λ , 7 和基底的热辐射强度 L ， T), 从而检测到晶片外延生长薄膜 基底温度。 因此， 第二分光元件 14需要设计成 92%透射率和 8%反射率。
第三分光元件 17的分光比是 50%透射率和 50%反射率。 在本发明实施例 二中， 第三分光元件 17首先用于透射第一平行光束后形成用于检测晶片外延 生长薄膜基底温度的入射光，还用于反射第二种反射光后形成能够被接收光纤 19接收的第二平行光束， 对第三分光元件 17而言， 反射和透射的作用同样重 要， 因此， 第三分光元件 17需要设计成 50%透射率和 50%反射率。
作为第三分光元件 17具体的实现方式，第三分光元件 17是分光棱镜或者 分光平片。
其中， N束激光波长选自 405nm、 532nm、 633nm和 650nm、 780nm、 980nm 等所有常见半导体激光器的波长中的任一，由于这些波长对应的光大都是可见 光， 因此， 对激光器的调试更加方便， 由于激光器发出的光是可见光， 最终投 射到 PSD1上形成的光斑也与该可见光的波长相同， 即， 此时比较容易寻找光 斑的位置， 从而使检测晶片外延生长薄膜基底二维形貌更加容易。
本实施例二提供的自动实时快速检测晶片基底二维形貌的装置还可以包 括第三运算模块， 激光接收装置将探测得到的光强信号输送到第三运算模块， 第三运算模块根据光强信号计算得到晶片基底的实时温度。
此时， 根据多次测量得到的晶片基底的二维形貌和晶片基底的实时温度， 得到晶片基底的二维形貌和晶片基底的实时温度之间的分布关系。
实施例三
本发明实施例三提供的实时快速检测晶片基底二维形貌的装置与本发明 实施例一和实施例二的区别在于，本发明实施例三提供的实时快速检测晶片基 底二维形貌的装置还可以包括通光装置，通光装置设置在入射光和第一种反射 光束共同经过的光路上， 通光装置上设有 N个通光孔， N个通光孔与 N束激 光——对应， 通光孔间隔地设有反射镜 11， 用于使对应经过的光束方向翻转 90° ， 从而使对应的 PSD转到另一方向， 节省摆放空间。
为了便于理解， 附图 3仅给出了其中一个光斑的光路图。
参见附图 3， 由激光器阵列中各第一种激光器 3发出的光束经过第一分光 元件 4反射后入射到反射镜 11， 经过反射镜 11反射后形成入射光， 入射光入 射到晶片基底上， 并在晶片基底上沿径向形成 N个入射点， 入射光 to底反 射后形成 N束第一种反射光束， 各第一种反射光束经过反射镜 11反射后， 又 经过第一分光元件 4透射后， 入射到与各第一种激光器 3相对应的 PSD1上， 形成 N个光斑。
本实施例中， 反射镜 11能够起到改变光路的作用， 能够使本发明实施例 二提供的实时快速检测晶片基底二维形貌的装置的结构更加紧凑。
以上的具体实施方式， 对本发明的目的、 技术方案和有益效果进行了进 一步详细说明， 所应理解的是， 以上仅为本发明的具体实施方式而已， 并不 用于限制本发明， 凡在本发明的精神和原则之内， 所做的任何修改、 等同替 换、 改进等， 均应包含在本发明的保护范围之内。

Claims

权 利 要 求
1、 自动实时快速检测晶片基底二维形貌的装置， 其特征在于， 包括第一 运算模块、 第二运算模块和分析模块，
所述第一运算模块根据 N个光斑的位置信号， 计算晶片基底上任意两个 入射点之间在待测基底沿 X方向的曲率 Cx,
所述第二运算模块根据 N个光斑的位置信号， 计算晶片基底上任意一个 入射点在待测基底移动方向即 Y方向的曲率 Cy，
其中， N为 3以上的自然数， 所述 N个光斑是由 N束激光沿晶片基底径 向即 X方向入射到晶片基底后又分别反射到与所述入射光——对应的 PSD上 形成的，
所述分析模块根据各所述 cx、 CY的计算结果， 得到基底的二维形貌。
2、 根据权利要求 1所述的自动实时快速检测晶片基底二维形貌的装置， 其特征在于，还包括数据釆集模块， 所述数据釆集模块用于釆集所述各光斑的 坐标， 并将所述各光斑的坐标输送到所述第一运算模块和第二运算模块。
3、 根据权利要求 1或 2所述的自动实时快速检测晶片基底二维形貌的装 置， 其特征在于， 所述 (^的计算公式为：
Q _ ( ~ ¾Q ) (·½ ~ -^lp )
2. dAB . 2 · dAB .； y10
其中，
JC10, 激光射到平面反射面后又反射到第一 PSD上形成的光斑的横坐标， JC2。， 激光射到平面反射面后又反射到第二 PSD上形成的光斑的横坐标， jcn , 光线射到晶片基底后又反射到第一 PSD上形成的光斑的横坐标， ¾1 , 光线射到晶片基底后又反射到第二 PSD上形成的光斑的横坐标， y10， 第一 PSD到晶片基底的距离， y20， 第二 PSD到晶片基底的距离，
dAB- 20— 10 °
4、 根据权利要求 1或 2所述的自动实时快速检测晶片基底二维形貌的装 置， 其特征在于， 所述 Cy的计算公式为：
^ 15/ k
π RPM · a
其中，
α， 校准系数，
f, 所述各 PSD的釆样频率，
RPM, 承载晶片基底的石墨盘每分钟转数。
5、 根据权利要求 1所述的自动实时快速检测晶片基底二维形貌的装置， 其特征在于， 还包括 N个 PSD， N束激光和第一分光元件， 所述 N束激光沿 直线排布， 其中， 所述 N为 3以上的自然数， 所述 N个 PSD与 N束激光—— 对应，
所述 N束激光首先射向所述第一分光元件， 经过所述第一分光元件后形 成入射光， 所述入射光入射到晶片基底上， 并在晶片基底上沿径向形成 N个 入射点， 所述入射光被所述基底反射后形成 N束第一种反射光束， 所述各第 一种反射光束经过所述第一分光元件透射后， 入射到与所述 N束激光相对应 的 PSD上， 形成 N个光斑。
6、 根据权利要求 5所述的自动实时快速检测晶片基底二维形貌的装置， 其特征在于， 所述 N束激光由 N个第一种激光器射出， 所述 N个第一种激光 器构成的激光器阵列。
7、 根据权利要求 5所述的自动实时快速检测晶片基底二维形貌的装置， 其特征在于， 所述 N为 5以上的自然数。
8、 根据权利要求 5所述的自动实时快速检测晶片基底二维形貌的装置， 其特征在于， 还包括第二分光元件， 以及温度测量装置；
所述 N束激光经过第一分光元件反射后入射到第二分光元件， 经过所述 第二分光元件后形成入射光， 所述入射光入射到晶片基底上， 并在晶片基底 上沿径向形成 N个入射点， 所述入射光被所述基底反射后形成 N束第一种反 射光束， 所述各第一种反射光束经过所述第二分光元件和所述第一分光元件 后， 入射到与所述 N束激光相对应的 PSD上， 形成 N个光斑；
所述温度测量装置包括激光发射装置， 第三分光元件和激光接收装置， 所述激光发射装置发出的第一平行光经过所述第三分光元件透射后，又经 过所述第二分光元件透射后，射向晶片基底并被所述基底反射后形成第二种反 射光束， 所述第二种反射光束经过所述第二分光元件透射后， 又经过所述第三 分光元件反射后形成第二平行光束，所述第二平行光束被所述激光接收装置接 收。
9、 根据权利要求 8所述的自动实时快速检测晶片基底二维形貌的装置， 其特征在于，
所述激光发射装置包括第二种激光器、发射光纤和第一透镜， 所述发射光 纤处于所述第一透镜的发射端焦点上；
所述激光接收装置包括第二透镜、接收光纤和探测器， 所述接收光纤处于 所述第二透镜接收端的焦点上。 10、 根据权利要求 9所述的自动实时快速检测晶片基底二维形貌的装置， 其特征在于， 所述接收光纤的芯径大于所述发射光纤的芯径。
11、根据权利要求 5或 8所述的自动实时快速检测晶片基底二维形貌的装 置， 其特征在于， 所述第一分光元件的分光比是 50%透射率和 50%反射率。
12、 根据权利要求 8所述的自动实时快速检测晶片基底二维形貌的装置， 其特征在于， 所述第二分光元件的分光比是 92%透射率和 8%反射率； 所述第 三分光元件的分光比是 50%透射率和 50%反射率。
13、 根据权利要求 8所述的自动实时快速检测晶片基底二维形貌的装置， 其特征在于， 所述第三分光元件是分光棱镜或者分光平片。
14、根据权利要求 5或 8所述的自动实时快速检测晶片基底二维形貌的装 置，其特征在于，所述 N束激光的波长选自 405nm、 532nm、 633nm和 650nm、 780nm、 980nm的所有常见半导体激光器的波长中的任一。
15、根据权利要求 5或 8所述的自动实时快速检测晶片基底二维形貌的装 置， 其特征在于， 还包括通光装置， 所述通光装置设置在所述入射光和第一种 反射光束共同经过的光路上， 所述通光装置上设有 N个通光孔， 所述 N个通 光孔与所述 N束激光——对应， 所述通光孔间隔地设有反射镜， 用于使对应 经过的光束方向翻转 90。 。
16、根据权利要求 8所述自动实时快速检测晶片基底二维形貌的装置， 其 特征在于， 还包括第三运算模块，
所述激光接收装置将探测得到的光强信号输送到所述第三运算模块，所述 第三运算模块根据所述光强信号计算得到所述晶片基底的实时温度。
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