CN105091777B - 实时快速检测晶片基底二维形貌的方法 - Google Patents
实时快速检测晶片基底二维形貌的方法 Download PDFInfo
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CN108254912B (zh) * | 2018-01-23 | 2020-03-27 | 电子科技大学 | 一种用于氮化物mocvd外延生长模式的实时显微监测系统 |
CN114061477B (zh) * | 2021-11-19 | 2022-09-23 | 楚赟精工科技(上海)有限公司 | 翘曲测量方法、翘曲测量装置及成膜系统 |
CN115325956B (zh) * | 2022-10-17 | 2023-02-03 | 南昌昂坤半导体设备有限公司 | 晶圆翘曲度测量方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US5523582A (en) * | 1992-04-30 | 1996-06-04 | Ann F. Koo | Method and apparatus for measuring the curvature of wafers with a laser source selecting device |
US5912738A (en) * | 1996-11-25 | 1999-06-15 | Sandia Corporation | Measurement of the curvature of a surface using parallel light beams |
CN101275825A (zh) * | 2008-01-11 | 2008-10-01 | 浙江工业大学 | Cmp过程中晶圆下液体薄膜中间变量的测量装置 |
CN101636696A (zh) * | 2007-02-06 | 2010-01-27 | 卡尔蔡司Smt股份公司 | 微光刻投射曝光设备的照明系统中多镜阵列的监测方法和设备 |
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JPH07234115A (ja) * | 1994-02-23 | 1995-09-05 | Nippon Steel Corp | 板材の反り量測定方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US5523582A (en) * | 1992-04-30 | 1996-06-04 | Ann F. Koo | Method and apparatus for measuring the curvature of wafers with a laser source selecting device |
US5912738A (en) * | 1996-11-25 | 1999-06-15 | Sandia Corporation | Measurement of the curvature of a surface using parallel light beams |
CN101636696A (zh) * | 2007-02-06 | 2010-01-27 | 卡尔蔡司Smt股份公司 | 微光刻投射曝光设备的照明系统中多镜阵列的监测方法和设备 |
CN101275825A (zh) * | 2008-01-11 | 2008-10-01 | 浙江工业大学 | Cmp过程中晶圆下液体薄膜中间变量的测量装置 |
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