CN103985653B - 一种晶片应力测量方法 - Google Patents
一种晶片应力测量方法 Download PDFInfo
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- CN103985653B CN103985653B CN201310271765.4A CN201310271765A CN103985653B CN 103985653 B CN103985653 B CN 103985653B CN 201310271765 A CN201310271765 A CN 201310271765A CN 103985653 B CN103985653 B CN 103985653B
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000005259 measurement Methods 0.000 claims abstract description 22
- 241000478345 Afer Species 0.000 claims abstract description 6
- 239000000523 sample Substances 0.000 claims description 41
- 238000001514 detection method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000205 computational method Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000013074 reference sample Substances 0.000 claims description 2
- 229920000535 Tan II Polymers 0.000 claims 2
- 238000004364 calculation method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/255—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310271765.4A CN103985653B (zh) | 2013-02-07 | 2013-02-07 | 一种晶片应力测量方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310271765.4A CN103985653B (zh) | 2013-02-07 | 2013-02-07 | 一种晶片应力测量方法 |
CN201310049375.2A CN103985652B (zh) | 2013-02-07 | 2013-02-07 | 一种晶片应力测量装置及测量方法 |
Related Parent Applications (1)
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CN201310049375.2A Division CN103985652B (zh) | 2013-02-07 | 2013-02-07 | 一种晶片应力测量装置及测量方法 |
Publications (2)
Publication Number | Publication Date |
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CN103985653A CN103985653A (zh) | 2014-08-13 |
CN103985653B true CN103985653B (zh) | 2017-03-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201310271765.4A Active CN103985653B (zh) | 2013-02-07 | 2013-02-07 | 一种晶片应力测量方法 |
Country Status (1)
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CN (1) | CN103985653B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103985652B (zh) * | 2013-02-07 | 2016-09-21 | 北京智朗芯光科技有限公司 | 一种晶片应力测量装置及测量方法 |
CN105091788B (zh) * | 2014-05-06 | 2017-11-07 | 北京智朗芯光科技有限公司 | 自动实时快速检测晶片基底二维形貌的装置 |
CN105698706B (zh) * | 2014-11-26 | 2018-03-30 | 北京智朗芯光科技有限公司 | 自动检测晶片基底二维形貌的装置 |
EP3502615A1 (en) * | 2017-12-21 | 2019-06-26 | EpiGan NV | A wafer surface curvature determining system |
CN111063634A (zh) * | 2019-11-12 | 2020-04-24 | 度亘激光技术(苏州)有限公司 | 监测装置和方法 |
CN111430257B (zh) * | 2020-04-02 | 2023-04-07 | 长江存储科技有限责任公司 | 测量装置及方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103985652A (zh) * | 2013-02-07 | 2014-08-13 | 北京智朗芯光科技有限公司 | 一种晶片应力测量装置及测量方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102023068A (zh) * | 2010-10-10 | 2011-04-20 | 徐建康 | 薄膜应力测量设备及其测量方法 |
US8264675B1 (en) * | 2011-05-12 | 2012-09-11 | Georgia Tech Research Corporation | Polariscope stress measurement tool and method of use |
CN102620868B (zh) * | 2012-03-10 | 2013-12-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 具有垂直光路结构的薄膜应力测量装置及其应用 |
CN102709211A (zh) * | 2012-06-21 | 2012-10-03 | 上海华力微电子有限公司 | 二氧化硅膜应力监测方法以及半导体器件制造方法 |
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2013
- 2013-02-07 CN CN201310271765.4A patent/CN103985653B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103985652A (zh) * | 2013-02-07 | 2014-08-13 | 北京智朗芯光科技有限公司 | 一种晶片应力测量装置及测量方法 |
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Address after: 102206 Beijing City, Changping District Changping Road No. 97 Xinyuan Science Park B building room 503 Applicant after: BEI OPTICS TECHNOLOGY Co.,Ltd. Address before: 100191, Beijing, Zhichun Road, Haidian District No. 27 quantum core 402 room Applicant before: BEI OPTICS TECHNOLOGY Co.,Ltd. |
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CB03 | Change of inventor or designer information |
Inventor after: Ma Tiezhong Inventor after: Liu Jianpeng Inventor after: Yan Dong Inventor after: Wang Linzi Inventor after: Jiao Hongda Inventor before: Li Chengmin Inventor before: Liu Jianpeng Inventor before: Yan Dong Inventor before: Ye Longmao Inventor before: Chen Yaqin Inventor before: Wang Linzi Inventor before: Jiao Hongda |
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Effective date of registration: 20190703 Address after: Room 503, Block B, Xinyuan Science Park, 97 Changping Road, Changping District, Beijing 102206 Patentee after: Ongkun Vision (Beijing) Technology Co.,Ltd. Address before: Room 503, Block B, Xinyuan Science Park, 97 Changping Road, Changping District, Beijing 102206 Patentee before: BEI OPTICS TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230627 Address after: B701, Building 8, No. 97, Changping Road, Shahe Town, Changping District, Beijing 102200 (Changping Demonstration Park) Patentee after: Beijing Airui Haotai Information Technology Co.,Ltd. Address before: Room 503, Block B, Xinyuan Science Park, 97 Changping Road, Changping District, Beijing 102206 Patentee before: Ongkun Vision (Beijing) Technology Co.,Ltd. |
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