WO2019144974A1 - 一种氮化物外延生长过程中薄膜纵向温度场的测量装置及方法 - Google Patents

一种氮化物外延生长过程中薄膜纵向温度场的测量装置及方法 Download PDF

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WO2019144974A1
WO2019144974A1 PCT/CN2019/079371 CN2019079371W WO2019144974A1 WO 2019144974 A1 WO2019144974 A1 WO 2019144974A1 CN 2019079371 W CN2019079371 W CN 2019079371W WO 2019144974 A1 WO2019144974 A1 WO 2019144974A1
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detector
optical
temperature
ultraviolet
light
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French (fr)
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王超
段英
姜晶
胡俊
张泽展
杨洋
苟学科
吴从均
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电子科技大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/141—Beam splitting or combining systems operating by reflection only using dichroic mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/30—Collimators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Definitions

  • the invention belongs to the field of semiconductor measurement technology, and discloses a method for measuring the longitudinal temperature of nitride epitaxial growth.
  • nitride materials have become an important material for the preparation of optoelectronic devices due to their absolute advantages such as high stability, high photoelectric conversion capability, low energy loss, and high breakdown field strength.
  • MOCVD metal organic chemical vapor deposition
  • the epitaxial wafer is placed on the graphite disk above the heating device.
  • the graphite disk is rotated by the rotating shaft at a high speed, and the reactant is carried by the carrier gas ( Generally, hydrogen and nitrogen are transported through the pipeline, enter the chamber through the shower plate, and are deposited on the surface of the epitaxial substrate by reaction.
  • the growth temperature of the epitaxial layer is a key parameter for the control of the production performance of the thin film growth reaction chamber. Due to the strict reaction conditions of the thin film growth reaction chamber, high temperature, chemically active growth environment, high-speed rotating substrate, and strict equipment space arrangement are adopted. Direct temperature measurement techniques such as thermocouples are almost impossible, so the growth temperature of the epitaxial layer must be measured by non-contact temperature measurement.
  • the temperature difference When there is a large stress between the epitaxial layer and the substrate, the temperature difference will increase to several tens of degrees, for real-time growth. The temperature of the collected heating plate as the epitaxial layer growth temperature will cause a great error. At the same time, the temperature drift of the epitaxial layer will cause the wavelength of the nitride to drift, resulting in a decrease in product yield. Although there is an ultraviolet temperature measurement method specifically for the surface of the epitaxial wafer of the infrared transparent substrate, the longitudinal temperature measurement from the substrate to the epitaxial layer cannot be achieved, and the temperature regulation of the different growth stages of the epitaxial layer is achieved.
  • the technical problem to be solved by the present invention is to realize the longitudinal temperature field measurement of the substrate to the epitaxial layer during the growth of the nitride, thereby achieving the regulation of the growth temperature of the epitaxial layer at different stages of the nitride.
  • the nitride is epitaxially grown on the substrate, placed on a graphite carrier for heating, and then rotated together at a high speed to obtain an epitaxial layer having a uniform temperature distribution.
  • the positional relationship between the substrate and the graphite carrier is as shown in FIG.
  • the whole measurement process is carried out in two steps.
  • the first step is to measure the temperature of the graphite disk and the surface of the epitaxial layer on the bottom surface of the substrate.
  • the second step is to perform thermal field analysis to obtain the longitudinal temperature field of the substrate to the epitaxial layer.
  • Infrared temperature measurement technology estimates the actual temperature of the object by detecting the thermal radiation intensity of the object in the near-infrared band, but the sapphire, silicon carbide and silicon substrates commonly used in the preparation of nitride devices cannot produce near due to the large forbidden band width. Infrared radiation. However, such substrates are substantially incapable of transmitting to the ultraviolet spectrum.
  • the surface temperature (epitaxial growth temperature) measurement of the epitaxial wafer can be inverted by testing the spectral intensity in the near-ultraviolet wavelength band, and the graphite disk temperature (substrate heating temperature) on the bottom surface of the substrate can be obtained by spectral measurement in the near-infrared region.
  • the temperature of the intermediate layer is calculated by a finite element analysis method to obtain a vertical distribution image of the temperature of the epitaxial layer to the graphite heating plate.
  • the technical solution of the present invention is a device for measuring a longitudinal temperature field of a nitride epitaxial growth, the device comprising an infrared detecting optical path and an ultraviolet detecting optical path;
  • the infrared detecting optical path includes an infrared radiation detecting optical path and an infrared reflecting detecting optical path
  • the infrared radiation detecting optical path includes: an optical probe, a second optical fiber, a second optical fiber coupler, a collimating mirror group, a second color separation piece, and a second focusing a mirror, a second filter, and a third detector, wherein the object to be measured radiates infrared light through the optical probe, the second optical fiber, the second optical fiber coupler, the collimating lens group, the second color separation film, the second focusing lens,
  • the second filter reaches the third detector
  • the infrared reflection detecting optical path comprises: a 940-1050 nm light source, a first collimating lens, a first beam splitter, a first detector, a first color separation sheet, and a first fiber coupling , first optical fiber, optical probe, second optical fiber, second optical fiber coupler, collimating lens group, second color separation piece, second focusing lens
  • the object to be tested is irradiated ,
  • the reflected light object to be measured and then sequentially passes through an optical probe, a second optical fiber, second fiber coupler, a collimator lens group, the second color separations, the second focusing lens, the second optical filter reaches the third detector;
  • the ultraviolet detecting optical path includes an ultraviolet radiation detecting optical path and an ultraviolet reflective detecting optical path
  • the ultraviolet radiation detecting optical path includes: an optical probe, a second optical fiber, a second optical fiber coupler, a collimating mirror group, a second color separation sheet, and a first focusing mirror
  • the first filter, the fourth detector, and the ultraviolet light radiated by the object to be tested sequentially passes through the optical probe, the second optical fiber, the second optical fiber coupler, the collimating mirror group, the second color separation sheet, the first focusing mirror,
  • the first filter reaches a fourth detector;
  • the ultraviolet reflection detecting optical path comprises a 400-450 nm light source, a second collimating lens, a second beam splitter, a second detector, a first color separation sheet, and a first fiber coupler a first optical fiber, an optical probe, a second optical fiber, a second optical fiber coupler, a collimating mirror group, a second color separation sheet, a first focusing mirror, a first filter, and
  • the reflected light of the object to be tested passes through the optical probe, the second optical fiber, the second optical fiber coupler, the collimating mirror group, passes through the second color separation sheet, and then passes through the first focusing mirror and the first filter.
  • Fourth detector After detector.
  • the 940-1050 nm light source, the 400-450 nm light source, the first detector, the second detector, the third detector, and the fourth detector are controlled by a calculator.
  • a method for measuring a longitudinal temperature field of nitride epitaxial growth comprising:
  • Step 1 measuring the infrared radiation intensity of the graphite disk
  • Step 2 irradiating the graphite disk with infrared light, measuring the reflectance of the graphite disk to the irradiated infrared light, and using 1 minus the reflectance to obtain the data is considered to be the emissivity of the graphite disk;
  • Step 3 measuring the surface ultraviolet radiation intensity of the epitaxial layer
  • Step 4 irradiating the epitaxial layer with ultraviolet light, measuring the reflectance of the epitaxial layer on the irradiated ultraviolet light, and using 1 minus the reflectance to obtain the data is considered to be the emissivity of the epitaxial layer;
  • Step 6 Calculate the temperature of the graphite disk and the epitaxial layer by using the following formula
  • M is the radiation intensity of the object to be measured
  • ⁇ is the measurement wavelength
  • T is the temperature
  • ⁇ ( ⁇ , T) is the emissivity of the object to be measured at the wavelength ⁇ and temperature T
  • C 1 , C 2 are known First and second radiation constants
  • Step 7 Establish an epitaxial growth longitudinal temperature field based on the temperature of the bottom graphite disk and the top epitaxial layer.
  • the invention relates to a device and a method for measuring a longitudinal temperature field of a nitride epitaxial growth, which respectively measure the temperature of the epitaxial layer of the bottom graphite disk and the top by using infrared and ultraviolet radiation, and then establish a longitudinal temperature field of nitride epitaxial growth, which is established.
  • the nitride epitaxial growth longitudinal temperature field has the advantages of high precision and good real-time performance.
  • Figure 1 is a schematic diagram of the overall optical path
  • Figure 2 is a probe optical system
  • Figure 3 is a schematic view of the structure of the turntable
  • Figure 5 is a simulation diagram of the longitudinal temperature field of the substrate-epoxy sheet.
  • the measurement of the longitudinal temperature field of the present invention is carried out in two steps.
  • the temperature of the bottom surface of the substrate (graphar disk) and the surface temperature of the epitaxial layer were measured.
  • sapphire Al 2 O 3
  • gallium nitride LED epitaxial wafer is grown thereon.
  • the near-ultraviolet band 400-450nm is selected. Since the growth temperature of the gallium nitride epitaxial layer is about 1000 °C, according to the Wien's displacement theorem, the maximum response wavelength is 1700 nm, so the selected band must be below 1700 nm.
  • the gas in the reaction chamber such as CO 2 and H 2 O absorbs less radiation.
  • the LED light sources respectively select the light sources of the corresponding bands.
  • FIG. 1 The specific optical path of the present invention is shown in FIG. 1
  • the infrared radiation emitted by the graphite disk is focused by the optical probe, and the radiation signal is transmitted to the PD3 infrared detector through the optical fiber coupler through the optical fiber 2, and the focusing band 2 is used to collect the light and the color separation film 2 filters the certain wavelength band.
  • the infrared radiation M emitted by the graphite disk at this temperature is received by the PD3.
  • the emissivity of the surface of the graphite disk is measured next.
  • the beam splitter 1 Open the infrared 940-1050nm LED light source, the beam splitter 1, a portion of the incident light intensity measured PD1 M received into another portion 1 through an optical fiber coupler into the optical path of the optical fiber 1, the optical probe hit the top disc graphite, reflected back
  • the radiation is transmitted to the optical fiber 2 through the optical probe, and then received by the PD3 through the optical coupler 2, the collimating mirror group, the color separation sheet 2, the focusing mirror 2, and the filter 2 to measure the reflected light intensity M inverse .
  • the surface temperature of the graphite disk is calculated, that is, the temperature T 1 of the bottom surface of the substrate.
  • the process of measuring the surface temperature of the epitaxial wafer is almost the same as that of the graphite disk.
  • the difference is that the gallium nitride has a large width and cannot emit infrared radiation. Therefore, we use the ultraviolet detector to measure the ultraviolet radiation emitted by the surface due to the temperature rise. In the measurement of emissivity, the LED light source in the ultraviolet band is also used.
  • the ultraviolet radiation emitted by the epitaxial wafer is received by the optical probe, and the radiation signal is transmitted to the PD4 ultraviolet detector through the optical fiber coupler via the optical fiber 2, and the concentrated mirror 1 is used to collect the light and the filter 1 filters the certain wavelength band.
  • the ultraviolet radiation M emitted by the gallium nitride epitaxial wafer at this temperature is received by the PD4.
  • the emissivity of the surface of the epitaxial wafer is measured.
  • the second step is performed, and the longitudinal temperature field from the bottom surface of the substrate to the surface of the epitaxial wafer is obtained by the thermal field analysis software ansys.
  • a gallium nitride epitaxial layer grown on a sapphire substrate is taken as an example to illustrate a longitudinal temperature field measurement method of the thin film during epitaxial growth.
  • the model is built as shown in Figure 4.
  • Substrate The material was sapphire (Al 2 O 3 ), the diameter was 2 inches, the thickness was 430 ⁇ m, and the lower surface temperature value was the graphite disk temperature T 1 .
  • Epitaxial wafer The epitaxial layer is composed of a buffer layer, a quantum germanium layer, an electrode contact layer, etc., and its specific material and thickness parameters are as shown in FIG. 2, and the diameter is 2 inches, and the upper surface temperature value is T 2 .
  • the epitaxial growth process is: the epitaxial substrate is mounted on the reactor of the carrier, carrying the gas to carry the dopant in the flask to the surface of the substrate of the reactor, and the computer passes parameters such as temperature, gas flow and time. Precise control to grow an epitaxial layer of a certain thickness and quality on the substrate. Therefore, it is necessary to provide parameters such as the environment inside the reaction chamber and the gas flow rate.
  • the wall is envisioned as having no slip, so the speed on the wall is zero. Because the wall is a double-layer quartz glass tube with circulating cooling water, the wall temperature is fixed at 300K.
  • the initial temperature inside the chamber should be set to 295K and the pressure should be 0.2 atm.
  • the gas inlet velocity was set to 0.1 m/s, and it was confirmed that the gas flow in the reaction chamber was laminar, and the initial temperature of the inflow gas was set to 300K.
  • the above parameters and thermal conductivity of the material, thermal properties such as specific heat, etc. are input into the ansys software to obtain a longitudinal temperature field from the bottom surface of the substrate to the surface of the epitaxial wafer, as shown in FIG. After obtaining the longitudinal temperature field, the temperature value information of the epitaxial growth layer can be read out layer by layer to achieve the purpose of macroscopically controlling the epitaxial growth temperature.

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Abstract

一种氮化物外延生长过程中薄膜纵向温度的测量装置及方法，分别采用紫外与红外辐射测温方法测量外延层表面的温度和衬底底面石墨盘的温度，采用有限元仿真的方法对衬底底面到外延层表面进行了热场分析，得到从衬底到外延层的纵向温度场，为氮化物生长过程中温度的调控提供了有利依据。

Description

一种氮化物外延生长过程中薄膜纵向温度场的测量装置及方法 技术领域
本发明属于半导体测量技术领域，公布了一种氮化物外延生长纵向温度测量方法。
背景技术
以氮化物材料为代表的第三代宽禁带半导体因具有高稳定性、高光电转化能力、低能量损耗，高击穿场强等绝对优势，成为制备光电子器件的重要材料。目前氮化物常用的生长设备是MOCVD(metal organic chemical vapor deposition，即金属有机化学气相沉积),外延片置于加热设备上面的石墨盘上，石墨盘由转轴带动高速旋转，反应物由载气(一般是氢气、氮气)通过管道运输，经由喷淋板进入腔室，通过反应沉积到外延衬底表面。外延层生长温度是薄膜生长反应腔生产性能控制的关键参数，由于薄膜生长反应腔的反应条件严格，需要高温、化学性质活泼的生长环境，高速旋转的衬底，以及严格的设备空间布置，采用热电偶等直接测温的技术几乎是不可能的，因此，必须依赖于非接触测温法对外延层生长温度进行测量。现有技术中，对于红外光透明的衬底材料，大部分辐射测温仪所采用的近红外波段(如900-1000nm)都能穿过外延层(氮化镓)以及其衬底材料(通常是蓝宝石)，仪器测得的近红外辐射为衬底下部的石墨加热盘发出，由此推算出的温度为加热盘温度，而非外延层本身的表面温度。通常，外延片与加热盘之间存在3℃～5℃的温差，当外延层与衬底之间存在较大应力导致外延片翘曲时，这个温差将增大至几十度，对于实时生长采集的加热盘温度作为外延层生长温度将导致极大的误差。同时，外延层的温度漂移将引起氮化物的发光波长漂移，导致产品良率降低。虽有专门针对对红外光透明衬底的外延片表面的紫外测温方法，但是依然无法实现从衬底到外延层的纵向温度测量，达到对外延层不同生长阶段的温度调控。
发明内容
本发明所要解决的技术问题是实现氮化物生长过程中衬底到外延层的纵向温度场测量，进而达到调控氮化物不同阶段外延层的生长温度。其中，氮化物是在衬底上面外延生长得到，置于用于加热的石墨载盘上并随之一起高速旋转，获得温度分布均匀的外延层。衬底与石墨载盘的位置关系如图3所示。
整个测量过程分两步进行，第一步先测量衬底底面石墨盘和外延层表面的温度，第二步进行热场分析得到衬底到外延层的纵向温度场。红外测温技术均通过探测物体在近红外波段的热辐射强度推算物体实际温度，但是制备氮化物器件所常用的蓝宝石、碳化硅和硅衬底由于禁带宽度较大的原因，均不能产生近红外辐射。但是这类衬底对于紫外光谱基本不能透射。鉴于上述原因，外延片的表层温度(外延层生长温度)测量可以通过测试近紫外波段的光谱强度进行反演，通近红外波段的光谱测量可以得到衬底底面石墨盘温度(衬底加热温度)；得到衬底底面和外延层表面的温度之后，利用有限元分析的方法对中间层的温度进行计算，得到外延层到石墨加热盘的温度垂直分布图像。
本发明技术方案为一种氮化物外延生长纵向温度场的测量装置，该装置包括红外探测光路和紫外探测光路；
其中红外探测光路包括红外辐射探测光路和红外反射探测光路，所述红外辐射探测光路包括：光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第二聚焦镜、第二滤光片、第三探测器，待测物体辐射红外光线依次经过光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第二聚焦镜、第二滤光片到达第三探测器；所述红外反射探测光路包括：940-1050nm光源、第一准直透镜、第一分光镜、第一探测器、第一分色片、第一光纤耦合器、第一光纤、光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第二聚焦 镜、第二滤光片、第三探测器，由940-1050nm光源发出的光线经过第一准直透镜后又第一分光镜分为两束，一束由第一探测器探测，另一束依次经过第一分色片、第一光纤耦合器、第一光纤、光学探头后照射待测物体，待测物体的反射光再依次经过光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第二聚焦镜、第二滤光片到达第三探测器；
紫外探测光路包括紫外辐射探测光路和紫外反射探测光路，所述紫外辐射探测光路包括：光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第一聚焦镜、第一滤光片、第四探测器，待测物体辐射的紫外光依次经过光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第一聚焦镜、第一滤光片达到第四探测器；所述紫外反射探测光路包括400-450nm光源、第二准直透镜、第二分光镜、第二探测器、第一分色片、第一光纤耦合器、第一光纤、光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第一聚焦镜、第一滤光片、第四探测器，由400-450nm光源发射的紫外光:首先经过第二准直透镜后被第二分光镜分为两束，一束由第二探测器探测，另一束经过第一分色片反射后一次经过第一光纤耦合器、第一光纤、光学探头后照射待测物体，待测物体的反射光依次经过光学探头、第二光纤、第二光纤耦合器、准直镜组后经过第二分色片，再经过第一聚焦镜、第一滤光片达到第四探测器。
所述的940-1050nm光源、400-450nm光源、第一探测器、第二探测器、第三探测器、第四探测器由计算器控制。
其中，探头具体光学系统如图2所示。
一种氮化物外延生长纵向温度场的测量方法，该方法包括：
步骤1：测量石墨盘的红外辐射强度；
步骤2：采用红外光照射石墨盘，测量石墨盘对照射的红外光的反射率，采用1减去该反射率得到的数据认为是该石墨盘的发射率；
步骤3：测量外延层表面紫外辐射强度；
步骤4：采用紫外光照射外延层，测量外延层对照射的紫外光的反射率，采用1减去该反射率得到的数据认为是该外延层的发射率；
步骤6：采用如下公式计算石墨盘和外延层的温度；
Figure PCTCN2019079371-appb-000001
其中M为待测物体的辐射强度，λ为测量波长，T为温度，ε(λ,T)为在波长为λ和温度为T时待测物体的发射率，C 1,C 2为已知的第一和第二辐射常数；
步骤7：根据底部石墨盘和顶部外延层的温度，建立外延生长纵向温度场。
本发明一种氮化物外延生长纵向温度场的测量装置及方法，采用红外和紫外辐射光分别测量出底部的石墨盘和顶部的外延层的温度，再建立氮化物外延生长纵向温度场，该建立的氮化物外延生长纵向温度场具有精度高，实时性好的优点。
附图说明
图1为整体光路原理图；
图2为探头光学系统；
图3为转盘结构示意图；
图4为外延生长结构示意图；
图5为衬底-外延片纵向温度场仿真图。
具体实施方式
本发明测量纵向温度场分两步进行。
第一步，测量衬底底面(石墨盘)的温度和外延层表面温度。
本例具体实施方式选用蓝宝石(Al 2O 3)为衬底材料，在其上生长氮化镓LED外延片。对于近紫外波段选择400-450nm，由于氮化镓外延层生长温度为1000℃左右，根据维恩位移定理，得到最大响应波长为1700nm，所以所选波段必须在1700nm以下。结合其在1000nm附近，CO 2，H 2O等反应室内的气体对辐射吸收较小，我们选择940-1050nm红外波段进行辐射接收。LED光源分别选择对应波段的光源。
本发明具体光路如图1所示。
测量石墨盘温度时，石墨盘发出的红外辐射通过光学探头聚焦，经光纤2由光纤耦合器将辐射信号传输到PD3红外探测器，此前经过聚焦镜2聚光和分色片2过滤一定波段的光，由PD3接收石墨盘在此温度下发出的红外辐射M。得到石墨盘热辐射之后，接下来要测量石墨盘表面的发射率。打开红外940-1050nm LED光源，经分光镜1，一部分被PD1接收测量其入射光强M 入，另一部分经光纤耦合器1将光路转入光纤1，经光学探头打在石墨盘上面，反射回去的辐射经过光学探头传入光纤2，再经光纤耦合器2、准直镜组、分色片2、聚焦镜2、滤光片2被PD3接收测量其反射光强M 反。则石墨盘表面的反射率
Figure PCTCN2019079371-appb-000002
则石墨盘表面发射率ε＝1-ρ。将得到的热辐射M与发射率ε代入亮度测温公式
Figure PCTCN2019079371-appb-000003
计算得出石墨盘表面温度，即是衬底底面的温度T 1。
测量外延片表面温度流程与石墨盘温度测量大致相同，不同的都是由于氮化镓尽带宽度较大，无法发出红外辐射，于是我们采用紫外波段探测器测量其由于 温度上升表面发出的紫外辐射，在测量发射率时也采用了紫外波段的LED光源。
测量外延片温度时，外延片发出的紫外辐射被光学探头接收，经光纤2由光纤耦合器将辐射信号传输到PD4紫外探测器，此前经过聚焦镜1聚光和滤光片1过滤一定波段的光，由PD4接收氮化镓外延片在此温度下发出的紫外辐射M。得到外延片热辐射之后，接下来要测量外延片表面的发射率。打开紫外400-450nm LED光源，经分光镜2，一部分被PD2接收测量其入射光强M 入，另一部分经光纤耦合器1将光路转入光纤1，经光学探头打在外延片上面，反射回去的辐射经过光学探头传入光纤2，再经光纤耦合器2、准直镜组、分色片2、聚焦镜1、滤光片1被PD4接收测量其反射光强M 反。则外延片表面的反射率
Figure PCTCN2019079371-appb-000004
则外延片表面发射率ε＝1-ρ。将得到的热辐射M与发射率ε代入亮度测温公式
Figure PCTCN2019079371-appb-000005
计算得出外延片表面温度T 2。
得到两个温度值以后，进行第二步，采用热场分析软件ansys得到从衬底底面到外延片表面的纵向温度场。
本例具体实施方式以蓝宝石衬底上生长氮化镓外延层为例，说明氮化物外延生长过程中薄膜的纵向温度场测量方法。
建立模型如图4所示。
衬底：材料为蓝宝石(Al 2O 3)，直径为2英寸，厚度430μm，下表面温度值为石墨盘温度T 1。
外延片：外延层由缓冲层、量子肼层、电极接触层等构成，其具体材料与厚度参数如图2所示，直径为2英寸，上表面温度值T 2。
边界条件：
外延生长过程为：外延的衬底装在承片架的反应器上,携带气体将料瓶中的掺杂料携带到反应器的衬底表面,计算机通过对温度、气体流量和时间等参数的精确控制,使衬底上生长出一定厚度及质量的外延层。所以需要提供反应室内部环境以及气体流量等参数。
(1)反应器壁面条件：
壁面设想为无滑移，所以壁面上的速度都为零。因为壁面为双层石英玻璃管，通有循环冷却水，所以壁面温度为固定值300K。
(2)反应器内部条件：
应室内部初始温度设置为295K，压强为0.2atm。
(3)气体入口条件：
气体入口速度设置为0.1m/s，可以认定反应腔内气流为层流，流入气体的初始温度设定为300K。
将上述参数以及材料的热导率、比热等热物性参数等输入ansys软件中，得到从衬底底面到外延片表面的纵向温度场，如图5所示。得到纵向温度场以后就可以逐层读出外延生长层的温度值信息，达到宏观调控外延生长温度的目的。

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  1. 一种氮化物外延生长纵向温度场的测量装置，该装置包括红外探测光路、紫外探测光路和计算器；其中红外探测光路包括红外辐射探测光路和红外反射探测光路，所述红外辐射探测光路包括：光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第二聚焦镜、第二滤光片、第三探测器，待测物体辐射红外光线依次经过光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第二聚焦镜、第二滤光片到达第三探测器；所述红外反射探测光路包括：940-1050nm光源、第一准直透镜、第一分光镜、第一探测器、第一分色片、第一光纤耦合器、第一光纤、光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第二聚焦镜、第二滤光片、第三探测器，由940-1050nm光源发出的光线经过第一准直透镜后被第一分光镜分为两束，一束由第一探测器探测，另一束依次经过第一分色片、第一光纤耦合器、第一光纤、光学探头后照射待测物体，待测物体的反射光再依次经过光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第二聚焦镜、第二滤光片到达第三探测器；紫外探测光路包括紫外辐射探测光路和紫外反射探测光路，所述紫外辐射探测光路包括：光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第一聚焦镜、第一滤光片、第四探测器，待测物体辐射的紫外光依次经过光学探头、第二光纤、第二光纤耦合器、准直镜组、第二分色片、第一聚焦镜、第一滤光片达到第四探测器；所述紫外反射探测光路包括400-450nm光源、第二准直透镜、第二分光镜、第二探测器、第一分色片、第一光纤耦合器、第一光纤、光学探头、第二光纤、 第二光纤耦合器、准直镜组、第二分色片、第一聚焦镜、第一滤光片、第四探测器，由400-450nm光源发射的紫外光:首先经过第二准直透镜后被第二分光镜分为两束，一束由第二探测器探测，另一束经过第一分色片反射后一次经过第一光纤耦合器、第一光纤、光学探头后照射待测物体，待测物体的反射光依次经过光学探头、第二光纤、第二光纤耦合器、准直镜组后经过第二分色片，再经过第一聚焦镜、第一滤光片达到第四探测器；所述的940-1050nm光源、400-450nm光源、第一探测器、第二探测器、第三探测器、第探测器由计算器控制。
  2. 一种氮化物外延生长纵向温度场的测量方法，该方法包括：
    步骤1：测量石墨盘的红外辐射强度；
    步骤2：采用红外光照射石墨盘，测量石墨盘对照射的红外光的反射率，采用1减去该反射率得到的数据认为是该石墨盘的发射率；
    步骤3：测量外延层表面紫外辐射强度；
    步骤4：采用紫外光照射外延层，测量外延层对照射的紫外光的反射率，采用1减去该反射率得到的数据认为是该外延层的发射率；
    步骤6：采用如下公式计算石墨盘和外延层的温度；其中M为待测物体的辐射强度，λ为测量波长，T为温度，ε(λ,T)为在波长为λ和温度为T时待测物体的发射率，C1,C2为已知的第一和第二辐射常数；
    Figure PCTCN2019079371-appb-100001
    步骤7：根据底部石墨盘和顶部外延层的温度，建立外延生长纵向温度场。
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DE102014114220A1 (de) * 2014-09-30 2016-03-31 Osram Opto Semiconductors Gmbh Verfahren für das Aufwachsen von Halbleiterschichten und Träger zum Aufwachsen von Halbleiterschichten
CN108400099A (zh) * 2018-01-23 2018-08-14 电子科技大学 一种氮化物外延生长过程中薄膜纵向温度场的测量装置及方法

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