CN105047573A - 一种半导体封装打线工艺中焊锡防腐蚀的处理方法 - Google Patents

一种半导体封装打线工艺中焊锡防腐蚀的处理方法 Download PDF

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CN105047573A
CN105047573A CN201510375588.3A CN201510375588A CN105047573A CN 105047573 A CN105047573 A CN 105047573A CN 201510375588 A CN201510375588 A CN 201510375588A CN 105047573 A CN105047573 A CN 105047573A
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scolding tin
wire bonding
semiconductor packaging
bonding process
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石磊
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Nantong Fujitsu Microelectronics Co Ltd
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Abstract

本发明提供了一种半导体封装打线工艺中焊锡防腐蚀的处理方法，包括以下步骤：1)提供一完成焊接的半导体封装件；2)对半导体封装件的焊锡涂覆保护层，将焊锡裸露的焊锡覆盖起来；3)半导体封装件进行清洗，除去多余的助焊剂；4)填充塑封材料。本发明提供的半导体封装打线工艺中焊锡防腐蚀的处理方法，可有效避免半导体封装打线工艺中焊锡的腐蚀问题，提高半导体封装芯片的良率，而且工艺简单，操作方便，成本低，适合工业化推广应用。

Description

一种半导体封装打线工艺中焊锡防腐蚀的处理方法
技术领域
本发明涉及半导体封装技术领域，尤其涉及一种半导体封装打线工艺中焊锡防腐蚀的处理方法。
背景技术
在半导体封装工艺中，在进行塑封前，需要对工件表面进行处理，被清除的污染物主要为助焊剂，也有少部分有机物、环氧树脂、光刻胶、氧化物、微颗粒污染物等。在清洗的过程中，只要存在这水分子，就会在半导体上的焊料(大多是铅锡焊料)与铝基层之间构成架桥，形成原电池反应。这样，焊锡的一端就会有Pb4+迁移到铝基层上，就会发生两种现象：键合点/焊盘腐蚀、金属迁移现象。对于键合点/焊盘腐蚀而言，可能会导致引线一端或两端完全断开,从而使引线在封装内自由活动并造成短路。潮湿和污物是造成腐蚀的主要原因。严格意义上说，只要存在这质子、电子，就会发生键合点/焊盘腐蚀现象和金属迁移现象。这对封装工件的威胁是致命的，因为焊锡上的焊锡会变得疏松多孔，导致电阻增大，直至器件失效，甚至是烧坏电路。
在键合点/焊盘腐蚀的同时也会发生金属迁移，从键合焊盘处产生金属枝晶生长。这是一个金属离子从阳极区向阴极区迁移的电解过程,与金属的可获得性、离子种类、电势差等相关。金属迁移将导致桥连区的泄露电流增加,如果桥连完全形成则造成短路。最为广泛报道的是Ag迁移，其它金属,如Pb、Sn、Ni、Au和Cu也存在迁移现象。金属迁移会导致键合的失效。即便是没有发生芯片失效现象，但这类封装工件依然存在这安全隐患。例如，如果应用于汽车控制电路，在汽车的颠簸震动条件下，封装例的芯片电路很可能会失效，甚至是电路开裂，从而造成汽车失灵，给驾驶员带来生命危险。所以，如何避免半导体封装打线工艺中焊锡的腐蚀问题，来提高封装芯片的良率，已是一个有待解决是技术问题。
中国专利201010187399.0公开了一种半导体封装打线表面的预氧化处理方法及其预氧化层结构，提供一氧化气体于所述打线结合部，使所述打线结合部上的所述打线接合表面及/或所述导线的表面形成一预氧化层；在后续进行封装程序时，所述预氧化层可防止所述导线及/或打线接合表面进一步产生腐蚀现象，因而可减少封装程序中产生氧化缺陷的风险，以提高所述打线结合部的焊接质量，并且可有效提高半导体封装的良品率。该现有技术虽然也在一定程度解决上述技术问题，但该方法需要使用氧化气体，操作不便，成本高，难以推广应用。
发明内容
为了解决半导体封装打线工艺中焊锡的腐蚀问题，本发明提供了一种半导体封装打线工艺中焊锡防腐蚀的处理方法，包括以下步骤：
1)提供一完成焊接的半导体封装件；
2)对半导体封装件的焊锡涂覆保护层，将焊锡裸露面覆盖起来；
3)半导体封装件进行清洗，除去多余的助焊剂；
4)填充塑封材料。
所述保护层为油墨、薄膜、蜡膜中的一种，所述保护层的厚度为15-120μm。
所述步骤2)中进行涂覆时，可使用喷枪，所述喷枪的喷嘴口径为0.5mm-1.0mm。
所述步骤2)中也可采用毛刷进行涂覆，所述毛刷直径为0.5-2mm，所述毛刷的刷毛的直径为0.01-0.05mm。
所述步骤2)中涂覆焊锡的裸露点包括芯片上封装金属片与铝层的焊锡、硅层与集成电路层之间的焊锡、封装金属片与引脚之间的焊锡、栅极的焊锡、栅极引脚的焊锡。
作为本发明一种可选的实施方式，所述步骤2)中保护层为UV油墨，所述步骤2)还包括：UV油墨涂覆覆盖焊锡后，进行紫外灯光照射，照射时间为3-10分钟。所述UV油墨的组分为：环氧树脂30％，氨基丙烯酸树脂35％，羟基丙烯酸树脂8％，环氧丙烯酸树脂5％，醇酸树脂15％，色墨7％。
作为本发明一种可选的实施方式，所述步骤2)中的保护层为有机硅胶薄膜，所述步骤2)还包括：有机硅胶覆盖焊锡后，于空气中静置5-10分钟。
作为本发明一种可选的实施方式，所述步骤2)中的保护层为防护蜡膜，所述防护蜡的成分为：石蜡20-50％，硬脂酸5-10％，三乙醇胺15-20％，余量为乙醇。所述涂覆防护蜡膜的步骤还包括：将防护蜡加热到40℃，涂覆后防护蜡后，在常温下静置30分钟。
作为本发明一种可选的实施方式，所述步骤2)中的保护层为双丙酮丙烯酰胺和己二酸二酰肼的混合体，所述己二酸二酰肼的含量占混合物总重量的1.5％，所述步骤2)还包括：涂覆焊锡后，于空气中静置10-20分钟。
进一步，所述步骤3)的清洗方法可以为等离子体清洗，所述使用的等离子气体为85％Ar+15％O2。
所述步骤3)的清洗方法也可以为紫外-臭氧清洗。
进一步，所述步骤4)采用环氧树脂进行塑封。
与现有技术相比，本发明的有益效果是：本发明提供的半导体封装打线工艺中焊锡防腐蚀的处理方法，可有效避免半导体封装打线工艺中焊锡的腐蚀问题，提高半导体封装芯片的良率，而且工艺简单，操作方便，成本低，适合工业化推广应用。
附图说明
图1是一种半导体封装件的结构剖面图；
图中附图标记说明：封装金属片2-1，丝线键接引脚2-3，栅极2-4，丝线2-5，高介电材料层2-6，集成电路层(DiePad)2-7，硅层(Si)2-8，铝层(Al)2-9，焊料层(solder)2-10。
具体实施方式
以下结合附图和实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
实施例1
图1为半导体封装件打线完毕的结构剖面图，从下至上包括集成电路层2-7、硅层2-8、铝层2-9、封装金属片2-1，集成电路层2-7与硅层2-8之间通过焊料层2-10连接；铝层2-9与硅层2-8邻接；封装金属片2-1与铝层2-9之间通过焊料层连接。封装金属片2-1一端与芯片漏极、源极的焊盘焊接，另一端与封装外引脚焊盘焊接，封装金属片2-1覆盖电晶体的漏极、源极、栅极。图中半导体件完成焊接后，焊料层2-10有一部分裸露的，比如焊料固化后的四周侧表面。在进行下一步塑封之前，需要先对封装件进行清洗。在清洗过程中，会产生键合点/焊盘腐蚀和金属迁移(详见背景技术)。导致焊盘受到腐蚀产生焊接质量下降，造成安全隐患。本发明的内容就是要解决这一技术问题。下述为其中一种解决方式：
该实施例提供了半导体封装打线工艺中焊锡防腐蚀的处理方法，包括以下步骤：
1)提供已完成焊接的半导体封装件；
2)采用喷嘴口径为0.5mm的自动喷枪，在半导体封装件裸露的焊锡，涂覆UV油墨保护层，保护层的厚度为15μm。涂覆的焊锡点包括集成电路层2-7与硅层2-8之间的焊料层2-10、封装金属片2-1与铝层2-9之间的焊料层2-10封装金属片2-1与引脚之间的焊锡、栅极2-4的焊锡、栅极引脚的焊锡。
焊锡涂覆UV油墨后，进行紫外灯光照射，照射时间8分钟，使UV油墨固化。UV油墨的组分为：环氧树脂30％，氨基丙烯酸树脂35％，羟基丙烯酸树脂8％，环氧丙烯酸树脂5％，醇酸树脂15％，色墨7％。
3)采用体积比为85％Ar+15％O2的等离子气体例，对半导体封装件进行清洗，除去多余的助焊剂；等离子气体清洗法是所有清洗方法中最为彻底的剥离式清洗，其最大优势在于清洗后无废液，最大特点是对金属、半导体、氧化物和大多数高分子材料等都能很好地处理，可实现整体和局部以及复杂结构的清洗，不损伤材料又能实现高效清理。
4)用环氧树脂填充半导体封装件，完成塑封。
实施例2
该实施例提供了半导体封装打线工艺中焊锡防腐蚀的处理方法，包括以下步骤：
1)提供如图1所示的已经完成焊接的半导体封装件。
2)用喷嘴口径为0.8mm的自动喷枪，在半导体封装件裸露的焊锡点，喷涂有机硅胶保护层，保护层的厚度为120μm。于空气中静置5-10分钟，使有机硅胶固化；可选用的有机硅胶有很多种，比如703硅胶、704硅胶、705硅胶、706硅胶等。被涂覆焊锡点的位置同实施例1。
3)采用紫外-臭氧清洗法，对半导体封装件进行清洗，除去多余的助焊剂。
4)用环氧树脂填充半导体封装件，完成塑封。
实施例3
该实施例提供了半导体封装打线工艺中焊锡防腐蚀的处理方法，包括以下步骤：
1)提供如图1所示的已经完成焊接的半导体封装件。
2)用喷嘴口径为1.0mm的自动喷枪，在半导体封装件裸露的焊锡点，喷涂双丙酮丙烯酰胺和己二酸二酰肼的混合体，其中己二酸二酰肼的含量占混合物含量的1.5％，混合体层的厚度为35μm。步骤2)还包括：涂覆焊锡后，于空气中静置10-20分钟，使混合体固化。被涂覆焊锡点的位置同实施例1。
3)采用体积比为85％Ar+15％O2的等离子气体例，对半导体封装件进行清洗，除去多余的助焊剂。
4)用环氧树脂填充半导体封装件，完成塑封。
实施例4
该实施例提供了半导体封装打线工艺中焊锡防腐蚀的处理方法，包括以下步骤：
1)提供如图1所示的已经完成焊接的半导体封装件。
2)将防护蜡加热到40℃，用喷嘴口径为0.6mm的自动喷枪，在半导体封装件裸露的焊锡喷涂防护蜡，在常温下静置30分钟；防护蜡的成分为：石蜡20-50％，硬脂酸5-10％，三乙醇胺15-20％，余量为乙醇。防护蜡层的厚度为90μm。被涂覆焊锡点的位置同实施例1。
3)采用体积比为85％Ar+15％O2的等离子气体例，对半导体封装件进行清洗，除去多余的助焊剂。
4)用环氧树脂填充半导体封装件，完成塑封。
实施例5
该实施例提供了半导体封装打线工艺中焊锡防腐蚀的处理方法，包括以下步骤：
1)提供如图1所示的已经完成焊接的半导体封装件。
2)中采用毛刷进行涂覆，所述毛刷直径为0.5mm，所述毛刷的刷毛的直径为0.01。焊锡涂覆UV油墨后，进行紫外灯光照射，照射时间8分钟，使UV油墨固化。UV保护层的厚度为60μm。被涂覆焊锡点的位置同实施例1。
3)采用体积比为85％Ar+15％O2的等离子气体例，对半导体封装件进行清洗，除去多余的助焊剂。
采用紫外-臭氧清洗法，对半导体封装件进行清洗，除去多余的助焊剂。
4)用环氧树脂填充半导体封装件，完成塑封。
实施例6
该实施例提供了半导体封装打线工艺中焊锡防腐蚀的处理方法，具体步骤同实施例5，不同之处在于步骤2)中采用的毛刷直径为2mm，毛刷的刷毛直径为0.05mm。
本发明提供的半导体封装打线工艺中焊锡防腐蚀的处理方法，可有效避免半导体封装打线工艺中焊锡的腐蚀问题，提高封装芯片的良率，而且工艺简单，操作方便，成本低，适合工业化推广应用。
上述说明示出并描述了本发明的优选实施例，如前所述，应当理解本发明并非局限于本文所披露的形式，不应看作是对其他实施例的排除，而可用于各种其他组合、修改和环境，并能够在本文所述发明构想范围内，通过上述教导或相关领域的技术或知识进行改动。而本领域人员所进行的改动和变化不脱离本发明的精神和范围，则都应在本发明所附权利要求的保护范围内。

Claims (10)

1.一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于，包括以下步骤：
1）提供一完成焊接的半导体封装件；
2）对半导体封装件的焊锡涂覆保护层，将焊锡裸露面覆盖起来；
3）半导体封装件进行清洗，除去多余的助焊剂；
4）填充塑封材料。
2.根据权利要求1所述的一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于：所述步骤2）中进行涂覆使用的是喷枪，喷枪的喷嘴口径为0.5mm-1.0mm。
3.根据权利要求1所述的一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于：所述步骤2）采用毛刷进行涂覆，所述毛刷直径为0.5mm-2mm，所述毛刷的刷毛直径为0.01mm-0.05mm。
4.根据权利要求1所述的一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于：所述步骤3）的清洗方法为等离子体清洗，所述使用的等离子气体为85%Ar+15%O2。
5.根据权利要求1所述的一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于：所述步骤3）的清洗方法为紫外-臭氧清洗。
6.根据权利要求1-3所述的一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于：所述保护层为油墨、薄膜、蜡膜中的一种，所述保护层的厚度为15-120μm。
7.根据权利要求6所述的一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于：所述油墨为UV油墨；所述步骤2）还包括：UV油墨覆盖焊锡后，进行紫外灯光照射，照射时间为3-10分钟。
8.根据权利要求6所述的一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于：所述薄膜为有机硅胶；所述步骤2）还包括：有机硅胶覆盖焊锡后，于空气中静置5-10分钟。
9.根据权利要求6所述的一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于：所述蜡膜的成分为：石蜡20-50%，硬脂酸5-10%，三乙醇胺15-20%，余量为乙醇；所述喷涂防护蜡的步骤还包括：将防护蜡加热到40℃，喷涂后防护蜡后，在常温下静置30分钟。
10.根据权利要求2或3所述的一种半导体封装打线工艺中焊锡防腐蚀的处理方法，其特征在于：所述步骤2）中所述保护层为双丙酮丙烯酰胺和己二酸二酰肼的混合体，所述己二酸二酰肼的含量占混合物总重量的1.5%，所述步骤2）还包括：涂覆盖焊锡后，于空气中静置10-20分钟。
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