CN104966738B - 主动元件结构及其制作方法 - Google Patents
主动元件结构及其制作方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 306
- 238000000137 annealing Methods 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 238000005286 illumination Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 19
- 238000000151 deposition Methods 0.000 description 16
- 239000007769 metal material Substances 0.000 description 11
- 239000010409 thin film Substances 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
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- 230000035515 penetration Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 239000002356 single layer Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- -1 Mo) Chemical compound 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 239000004411 aluminium Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000276425 Xiphophorus maculatus Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical class [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开一种主动元件结构及制作方法,其中主动元件结构包括栅极、氧化物通道层、源极、漏极、与高能量绝缘层。氧化物通道层与栅极上下叠置,其中氧化物通道包括一上层与一下层,且上层的晶格结构与下层的晶格结构不同。源极及漏极都与氧化物通道层接触,其中源极与漏极以氧化物通道层相隔一间距并定义出一通道区。高能量与绝缘层氧化物通道层的上层接触。氧化物通道层的上层结构可以提供挡光效果,进而改善氧化物通道层照光而产生的临界电压偏移问题。
Description
技术领域
本发明涉及一种主动元件及其制造方法,且特别是涉及一种具有氧化物通道层的主动元件结构及其制作方法。
背景技术
近年来,使用铟(In)-镓(Ga)-锌(Zn)-氧(O)系(以下称作IGZO)的氧化物半导体薄膜作为薄膜晶体管的通道层已有许多研究与实际的应用开发。然而,氧化物半导体薄膜虽然可作为薄膜晶体管的通道层,但氧化物半导体薄膜受光照射之后,电性特性会发生改变(例如,载流子容易跃迁至导电带),致使薄膜晶体管的临界电压(threshold voltage)发生偏移。故使用氧化物半导体薄膜作为通道层的主动元件会有稳定性不佳的问题。
发明内容
本发明的目的在于提供一种主动元件结构,其具有较佳的稳定性。
本发明的再一目的在于提供一种主动元件结构的制作方法,其可以制作出稳定性较佳的主动元件结构。
为达上述目的,本发明提供一种主动元件结构,包括栅极、氧化物通道层、源极、漏极以及高能量绝缘层。氧化物通道层与栅极上下叠置,其中氧化物通道层包括上层与下层,且上层的晶格结构与下层的晶格结构不同。源极及漏极都与氧化物通道层接触,其中源极与漏极相隔一间距以在氧化物通道层定义出一通道区。高能量绝缘层接触氧化物通道层的上层。
在本发明的一实施例中,上述高能量绝缘层的材质包括氧化硅。
在本发明的一实施例中,上述上层的厚度与下层的厚度的比为1:5至1:9。
在本发明的一实施例中,上述上层的晶格结构为体心立方(BCC)结晶或面心立方(FCC)结晶。
在本发明的一实施例中,上述下层为非晶质的晶格结构。
在本发明的一实施例中,上述上层的氧含量低于下层的氧含量。
在本发明的一实施例中,上述主动元件结构还包括栅极绝缘层,其中栅极绝缘层位于栅极与氧化物通道层之间,且氧化物通道层、源极与漏极位于高能量绝缘层与栅极绝缘层之间。
在本发明的一实施例中,上述主动元件结构还包括保护层,其中高能量绝缘层位于栅极与氧化物通道层之间。
在本发明的一实施例中,上述氧化物通道层的上层与下层的材质包括铟镓锌氧化物。
在本发明的一实施例中,上述氧化物通道层的上层的面积大致相同该氧化物通道层与高能量绝缘层的接触面积。
本发明提供一种主动元件结构的制作方法,包括先形成栅极、氧化物通道层、源极与漏极,其中栅极与氧化物通道层上下叠置。源极与漏极都与氧化物通道层接触,并相隔一间距以在氧化物通道层定义出一通道区。再来,进行高能量沉积步骤以形成接触氧化物通道层的高能量绝缘层。高能量沉积步骤的能量密度由0.14瓦/平方厘米(W/cm2)至0.37瓦/平方厘米(W/cm2)。之后,进行退火步骤使氧化物通道层包括接触于高能量绝缘层的上层与下层,且上层的晶格结构与下层的晶格结构不同。退火步骤的制作工艺温度由200℃至300℃。
在本发明的一实施例中,上述高能量沉积步骤的能量密度由0.21瓦/平方厘米(W/cm2)至0.28瓦/平方厘米(W/cm2)。
在本发明的一实施例中,上述退火步骤在大气环境下进行。
在本发明的一实施例中,上述退火步骤的制作工艺温度为230℃,且进行时间为120分钟。
在本发明的一实施例中,上述退火步骤在高能量沉积步骤之后进行。
在本发明的一实施例中,上述高能量绝缘层形成于栅极与氧化物通道层之间。
在本发明的一实施例中,上述主动元件结构的制作方法还包括于栅极与氧化物通道层之间形成栅极绝缘层。氧化物通道层、源极与漏极都形成于栅极绝缘层与高能量绝缘层之间。
在本发明的一实施例中,上述高能量绝缘层的材质包括氧化硅。
基于上述,本发明的主动元件结构及其制作方法可让接触于高能量绝缘层的氧化物通道层划分为不同晶格结构的上层与下层,且上层可以提供阻挡光线的作用。由此,本发明实施例的设计可改善氧化物通道层受光照射后载流子(例如电子)提早跳跃至导电带的情形。换言之,本发明实施例的主动元件结构不容易产生临界电压的偏移,进而使主动元件结构具有较佳的稳定性。
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附的附图作详细说明如下。
附图说明
图1A至图1F为本发明的一实施例的一种主动元件结构的制作流程示意图;
图2A为一具体范例的主动元件结构的局部区域的穿透式电子显微图(照片);
图2B为图2A中区域E的局部放大图(照片);
图2C为图2B中氧化物通道层的上层经由穿透式电子显微镜所分析的绕射图(照片);
图2D为另一具体范例的主动元件结构的局部区域的穿透式电子显微图(照片);
图2E为图2D中区域F的局部放大图(照片);
图2F为图2E中氧化物通道层的上层经由穿透式电子显微镜所分析的绕射图(照片);
图3为本发明第二实施例的主动元件结构的剖面示意图;
图4为本发明第三实施例的主动元件结构的剖面示意图;
图5为本发明第四实施例的主动元件结构的剖面示意图。
符号说明
10、10’、10”、20、30、40:主动元件结构
100:基板
102、102’、102”、302:栅极
104、104’、104”:栅极绝缘层
106、106’、106”、206、306、406:氧化物通道层
106B、106B’、106B”、206B、306B、406B:下层
106S1:第一侧
106S2:第二侧
106T、106T’、106T”、206T、306T、406T:上层
108:金属材料层
108’、108”:电极
108a、208a、308a、408a:源极
108b、208b、308b、408b:漏极
110:图案化光致抗蚀剂层
110A:开口
112、112’、112”、312:高能量绝缘层
314:保护层
AN:箭头
CH:通道区
E、F:区域
G:间距
P:晶格点
具体实施方式
图1A至图1F是依照本发明一实施例的主动元件的制造流程示意图。首先,请参照图1A。提供基板100,并于基板100上形成栅极102。在本实施例中,基板100例如为硬质基板(rigid substrate)或可挠式基板(flexible substrate)等。举例而言,基板100的材质可为玻璃、塑胶、复合材质或其他可以提供支撑且可制作板状结构的材质。此外,栅极102的材质为导电材料。举例而言,栅极102的材质可为单层或多层堆叠的金属材料,例如选自由铜(Copper,Cu)、钼(Molybdenum,Mo)、钛(Titanium,Ti)、铝(Aluminum,Al)、钨(Tungsten,W)、银(Silver,Ag)、金(Gold,Au)及其合金所组成的族群中的至少之一。在本实施例中,栅极102可通过光刻蚀刻制作工艺来图案化金属材料而制作,但不需以此为限。
接着,请参照图1B。在基板100以及栅极102上形成栅极绝缘层104,其中栅极绝缘层104同时覆盖基板100以及栅极102。也就是说,栅极102位于基板100与栅极绝缘层104之间。在本实施例中,栅极绝缘层104可为单层结构或多层堆叠的复合结构,且栅极绝缘层104的材质例如是氮化硅、氧化硅、氮氧化硅或其他合适的介电材料。
请继续参照图1B。在完成栅极绝缘层104的制作之后,在栅极绝缘层104上形成氧化物通道层106。氧化物通道层106与栅极102上下叠置且通过栅极绝缘层104彼此分隔而不接触。也就是说,氧化物通道层106投影至基板100上的面积重叠于栅极102投影至基板100上的面积。在本实施例中,氧化物通道层106的材质可包括含锡、铟、镓、锌中至少一者的氧化物。以下将以氧化物通道层106的材质为铟锡锌氧化物为例说明,但本发明不限定于此。
然后,请参照图1C。在完成氧化物通道层106的制作后,在氧化物通道层106上形成金属材料层108。金属材料层108可以为单层结构或多层堆叠的复合结构,且其材质例如是铝(Al)、钼(Mo)、银(Ag)、钯(Palladium,Pd)或其合金等金属材料。金属材料层108的材质可与栅极102的材质相同或不同。
之后,请参照图1D。在金属材料层108上形成图案化光致抗蚀剂层110,此图案化光致抗蚀剂层110是用以定义后续欲形成的源极108a与漏极108b的图案。如图1D所示,图案化光致抗蚀剂层110配置在金属材料层108上,且图案化光致抗蚀剂层110对应于氧化物通道层106上方具有一开口110A以暴露出部分的金属材料层108。
其后,请参照图1D与图1E。在形成图案化光致抗蚀剂层110之后,通过蚀刻方式移除未被图案化光致抗蚀剂层110所覆盖的金属材料层108,以完成源极108a与漏极108b的制作。在此,如图1E所示,源极108a与漏极108b相隔一间距G,以在对应于间距G的氧化物通道层106定义出一通道区CH。具体而言,在本发明的一实施例中,源极108a以及漏极108b可通过湿式蚀刻剂(etchant)蚀刻所形成,湿式蚀刻剂例如为硫酸、磷酸、硝酸与醋酸或至少上述二者的混合。在其他实施例中,湿式蚀刻剂也可为铝酸蚀刻液。
由图1E可知,源极108a与漏极108b都接触于氧化物通道层106并且位于通道区CH的两侧。栅极102位于氧化物通道层106的第一侧106S1,源极108a与漏极108b位于氧化物通道层106的第二侧106S2,且第一侧106S1与第二侧106S2相对。同时,栅极102位于氧化物通道层106与基板100之间而构成底栅型结构。
之后,请参照图1F,在源极108a及漏极108b形成之后,进行高能量沉积步骤以于氧化物通道层106上形成高能量绝缘层112。在本实施例中,所谓高能量沉积步骤的能量密度可以落在0.14瓦/平方厘米(W/cm2)至0.37瓦/平方厘米(W/cm2)之间,或是落在0.21瓦/平方厘米(W/cm2)至0.28瓦/平方厘米(W/cm2)之间。高能量沉积步骤是采用化学气相沉积法(CVD),且化学气相沉积法中的反应气体包括氧化二氮(N2O)与四氧化硅(SiH4)。同时,高能量沉积步骤中的氧化二氮(N2O)与四氧化硅(SiH4)的体积比例如落在55~70之间。因此,高能量绝缘层112的材质包括氧化硅、氮氧化硅或其组合。
在本实施例中,在高能量沉积步骤之后还进行退火步骤(以箭头AN表示),其中退火步骤的制作工艺温度例如落在200℃至300℃之间,且退火步骤是在大气环境下进行。高能量沉积步骤与退火步骤的执行,使得氧化物通道层106中接触于高能量绝缘层112的部分接受到足够的能量使晶格结构发生变化。因此,接触于高能量绝缘层112的氧化物通道层106的结构会发生变化而划分成上层106T与下层106B,其中上层106T的分布面积大致上相同于高能量绝缘层112与氧化物通道层106的接触面积。上层106T的晶格结构与下层106B的晶格结构不同,并且上层106T相较于下层106B更接近高能量绝缘层112,也就是说,上层106T会位于下层106B与高能绝缘层112之间。
氧化物通道层106的上层106T与下层106B的材质都是铟锡锌化物,不过上层106T的含氧量低于下层106B。上层106T的厚度与下层106B的厚度的比为1:5至1:9。在本实施例中,上层106T的结晶度高于下层106B。举例而言,氧化物通道层106的上层106T的晶格结构例如为体心立方(BCC)结晶或面心立方(FCC)结晶的结构,下层106B则为非晶质的晶格结构。
图2A为一具体范例的主动元件结构的局部区域的穿透式电子显微照片,图2B为图2A中区域E的局部放大图,而图2C为图2B中氧化物通道层的上层经由穿透式电子显微镜所分析的绕射图案。具体来说,图2A中显示了主动元件结构10’的栅极102’、栅极绝缘层104’、氧化物通道层106’、作为源极或漏极的电极108’以及高能量绝缘层112’。在此具体范例中,高能量绝缘层112’的沉积步骤中,能量密度为0.21瓦/平方厘米(W/cm2)。制作完高能量绝缘层112’之后所执行的退火步骤的制作工艺温度约为230℃,且退火步骤的进行时间约为120分钟。由图2A至图2C可知,特别是图2B,接触于高能量绝缘层112’的氧化物通道层106’明显划分为上下两层其中上层106T’接触于高能量绝缘层112’且具有较不平整的结构,而下层106B’较接近于栅极绝缘层104’且具有较为平整的结构。由图2C的绕射图案中所呈现的晶格点P还可知道,上层106T’的结晶晶格大致上为体心立方(BCC)结晶。
图2D为另一具体范例的主动元件结构的局部区域的穿透式电子显微照片,图2E为图2D中区域F的局部放大图,而图2F为图2E中氧化物通道层的上层经由穿透式电子显微镜所分析的绕射图案。具体来说,图2D中显示了主动元件结构10”的栅极102”、栅极绝缘层104”、氧化物通道层106”、作为源极或漏极的电极108”以及高能量绝缘层112”。在此具体范例中,高能量绝缘层112”的沉积步骤中,能量密度为0.28瓦/平方厘米(W/cm2)。制作完高能量绝缘层112”之后所执行的退火步骤的制作工艺温度约为230℃,且退火步骤的进行时间约为120分钟。由图2D至图2F可知,特别是图2E,接触于高能量绝缘层112”的氧化物通道层106”明显划分为上下两层,其中上层106T”接触于高能量绝缘层112”且具有较不平整的结构,而下层106B”较接近于栅极绝缘层104”且具有较为平整的结构。由图2F的绕射图案中所呈现的晶格点P更可知道,上层106T”的结晶晶格大致上为面心立方(FCC)结晶。
由图2A至图2F得知,当依序进行高能量沉积步骤以及退火步骤后,氧化物通道层106、106’或106”中接近高能量氧化层112、112’或112”的晶格结构会发生变化而构成不同晶格结构的上层与下层。由于进行高能量沉积步骤以及退火步骤后形成的上层106T、106T’或106T”具有结晶度较高的结晶相,可以阻挡光线。因此,本实施例的主动元件结构10、10’或10”中氧化物通道层106、106’或106”不容易因照光而使电子提早跳跃至导电带。由此,主动元件结构10、10’或10”不容易发生临界电压的偏移,进而具有较佳的稳定性。
图3是本发明第二实施例的主动元件结构的剖面示意图。本实施例为底栅型结构的另一种设计。请参照图3,主动元件结构20包括在基板100上形成的栅极102、栅极绝缘层104、氧化物通道层206、源极208a、漏极208b、以及高能量绝缘层112。在此,氧化物通道206与栅极102上下叠置。源极208a与漏极208b都与氧化物通道层206接触,并以氧化物通道层206相隔一间距G而定义出一通道区CH。并且,源极208a与漏极208b位于氧化物通道层206与栅极102之间。高能量绝缘层112则覆盖氧化物通道层206。本实施例中,栅极102、源极208a与漏极208b都位于氧化物通道层206与基板100之间。
主动元件结构20的制作方法大致上相同于前述主动元件结构10的制作方法,其中主动元件结构20的制作过程中,是先在栅极绝缘层104上制作源极208a与漏极208b,再接着制作氧化物通道层206。此时,制作源极208a与漏极208b所使用的蚀刻剂不会影响氧化物通道层206。因此,有助于降低氧化物通道层206在制作过程中接触到蚀刻剂的机率。另外,高能量绝缘层112的制作方法如所述,并且高能量绝缘层112制作完成之后,会进行依退火步骤。因此,氧化物通道层206包括上层206T与下层206B且上层206T位于高能量绝缘层112与下层206B之间,其中上层206T的晶格结构不同于下层206B的晶格结构。特别是,上层206T的晶格结构具有较高的结晶度,而下层206B的晶格结构具有较低的结晶度。因此,在本实施例中,上层206T可以提供遮光效果以降低氧化物通道层206在主动元件结构20中发生照光而使电子提早跳跃至导电带的现象。由此,主动元件结构20不容易发生临界电压的偏移,进而具有较佳的稳定性。
图4是本发明第三实施例的主动元件结构的剖面示意图。请参照图4本实施例为顶栅型(top gate)结构的一种设计,也就是主动元件结构30的栅极302位于氧化物通道层306上方。具体来说,主动元件结构30包括在基板100上形成的源极308a、漏极308b、氧化物通道层306、高能量绝缘层312、栅极302以及保护层314。栅极302与氧化物通道层306上下叠置。源极308a与漏极308b都与氧化物通道层306接触,并以氧化物通道层306相隔一间距G以定义出一通道区CH。高能量绝缘层312位于栅极302与氧化物通道层306之间。保护层314形成于栅极302上方。此时,保护层314覆盖栅极302与高能量绝缘层312。在本实施例中,高能量绝缘层312位于栅极302与氧化物通道层306之间,因此高能量绝缘层312可以视为栅极绝缘层。
主动元件结构30的制作方法中,是先在基板100上制作源极308a与漏极308b,再接着制作氧化物通道层306、栅极302与保护层314,其中高能量绝缘层312的制作工艺条件可以参照前述实施例中高能量绝缘层112的制作工艺条件。在高能量绝缘层312制作完成后以及制作栅极302之前,本实施例的制作方法会进行退火步骤,其中退火步骤的具体制作工艺条件可以参照图1F的相关说明。并且,氧化物通道层306可在执行完高能量沉积步骤与退火步骤之后划分成上层306T与下层306B且上层306T位于高能量绝缘层312与下层306B之间,其中上层306T的晶格结构不同于下层306B的晶格结构。特别是,上层306T的晶格结构具有较高的结晶度,而下层306B的晶格结构具有较低的结晶度。因此,在本实施例中,上层306T可以提供遮光效果以降低氧化物通道层306在主动元件结构30中发生照光而使电子提早跳跃至导电带的现象。由此,主动元件结构30不容易发生临界电压的偏移,进而具有较佳的稳定性。
图5是本发明第四实施例的主动元件结构的剖面示意图。本实施例为顶栅型结构的另一种设计。请参照图5,主动元件结构40的元件配置关系大致相似于主动元件结构30,但是氧化物通道层406的制作步骤优先于源极408a与漏极408b的制作步骤,因此主动元件结构40的源极408a与漏极408b位于氧化物通道层406与高能量绝缘层312之间。氧化物通道层406如前述实施例般可以划分成结晶度较高的上层406T与结晶度较低的下层406B,且上层406T位于下层406B与作为栅极绝缘层的高能量绝缘层312之间。因此,主动元件结构40的各构件的制作方法、配置关系与功能可以参照前述实施例的描述而不另赘述。
综上所述,在本发明的实施例的主动元件结构中,由于在制作氧化物通道层后依序进行高能量沉积步骤以及退火步骤来制作接触氧化物通道层的高能量绝缘层,使只接触于高能量绝缘层的氧化物通道层的晶格结构局部的改变排列而划分成上下两层,其中上层结构较接近高能量绝缘层并具有结晶度较佳的晶格结构。此时,因为结晶度较佳的上层可以提供挡光效果,进而有效改善氧化物通道层因照光而载流子容易跃迁所导致主动元件结构的临界电压的偏移问题,以提高主动元件结构的稳定性。
虽然结合以上实施例公开了本发明,然而其并非用以限定本发明,任何所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,可作些许的更动与润饰,故本发明的保护范围应当以附上的权利要求所界定的为准。
Claims (16)
1.一种主动元件结构,包括:
栅极;
氧化物通道层,与该栅极上下叠置,其中该氧化物通道层包括一上层与一下层,且该上层的晶格结构与该下层的晶格结构不同;
源极,接触该氧化物通道层;
漏极,接触该氧化物通道层,其中该源极与该漏极相隔一间距以在该氧化物通道层定义出一通道区;以及
高能量绝缘层,接触该氧化物通道层的该上层,该高能量绝缘层是通过能量密度由0.14瓦/平方厘米(W/cm2)至0.37瓦/平方厘米(W/cm2)之间的一高能量沉积步骤来形成,
其中该上层的氧含量低于该下层的氧含量,且该上层的晶格结构为体心立方(BCC)结晶或面心立方(FCC)结晶。
2.如权利要求1所述的主动元件结构,其中该高能量绝缘层的材质包括氧化硅。
3.如权利要求1所述的主动元件结构,其中该上层的厚度与该下层的厚度的比为1:5至1:9。
4.如权利要求1所述的主动元件结构,其中该下层为非晶质的晶格结构。
5.如权利要求1所述的主动元件结构,还包括栅极绝缘层,其中该栅极绝缘层位于该栅极与该氧化物通道层之间,且该氧化物通道层、该源极与该漏极位于该高能量绝缘层与该栅极绝缘层之间。
6.如权利要求1所述的主动元件结构,还包括保护层,其中该高能量绝缘层位于该栅极与该氧化物通道层之间。
7.如权利要求1所述的主动元件结构,其中该氧化物通道层的该上层与该下层的材质包括铟镓锌氧化物。
8.如权利要求1所述的主动元件结构,其中该氧化物通道层的该上层的面积大致相同于该氧化物通道层与该高能量绝缘层的接触面积。
9.一种主动元件结构的制作方法,包括:
形成一栅极、一氧化物通道层、一源极与一漏极,其中该栅极与该氧化物通道层上下叠置,该源极与该漏极接触该氧化物通道层并相隔一间距以在该氧化物通道层定义出一通道区;
进行一高能量沉积步骤以形成接触该氧化物通道层的一高能量绝缘层,其中该高能量沉积步骤的能量密度由0.14瓦/平方厘米(W/cm2)至0.37瓦/平方厘米(W/cm2);以及
进行一退火步骤,以使该氧化物通道层包括接触于该高能量绝缘层的一上层与一下层,且该上层的晶格结构与该下层的晶格结构不同,该上层形成为具有体心立方结晶或面心立方结晶的结晶度较高的结晶相,其中该退火步骤的制作工艺温度由200℃至300℃。
10.如权利要求9所述的主动元件结构的制作方法,其中该高能量沉积步骤的能量密度由0.21瓦/平方厘米(W/cm2)至0.28瓦/平方厘米(W/cm2)。
11.如权利要求9所述的主动元件结构的制作方法,其中该退火步骤在大气环境下进行。
12.如权利要求9所述的主动元件结构的制作方法,其中该退火步骤的制作工艺温度为230℃,且进行时间为120分钟。
13.如权利要求9所述的主动元件结构的制作方法,其中该退火步骤在该高能量沉积步骤之后进行。
14.如权利要求9所述的主动元件结构的制作方法,其中该高能量绝缘层形成于该栅极与该氧化物通道层之间。
15.如权利要求9所述的主动元件结构的制作方法,还包括形成一栅极绝缘层于该栅极与该氧化物通道层之间,且该氧化物通道层、该源极与该漏极都形成于该栅极绝缘层与该高能量绝缘层之间。
16.如权利要求9所述的主动元件结构的制作方法,其中该高能量绝缘层的材质包括氧化硅。
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