CN104966696A - Tft基板的制作方法及其结构 - Google Patents

Tft基板的制作方法及其结构 Download PDF

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CN104966696A
CN104966696A CN201510227686.2A CN201510227686A CN104966696A CN 104966696 A CN104966696 A CN 104966696A CN 201510227686 A CN201510227686 A CN 201510227686A CN 104966696 A CN104966696 A CN 104966696A
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hole
layer
semiconductor layer
electrode
tft
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CN104966696B (zh
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石龙强
韩佰祥
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/759,190 priority patent/US9978778B2/en
Priority to PCT/CN2015/079907 priority patent/WO2016176884A1/zh
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Abstract

本发明提供一种TFT基板的制作方法及其结构。该TFT基板的制作方法通过将连接两双栅极TFT的连接电极(83)设置于第三金属层，避免了现有设计中将连接电极与数据线、供电压线等讯号线共同设置于第二金属层从而导致该连接电极与第二金属层的设计规则变小的问题，有利于提高显示面板的开口率、及分辨率。本发明提供的一种TFT基板结构，其结构简单，具有高开口率及高分辨率。

Description

TFT基板的制作方法及其结构
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板结构及其制作方法。
背景技术
在显示技术领域，液晶显示器(Liquid Crystal Display，LCD)与有机发光二极管显示器(Organic Light Emitting Diode，OLED)等平板显示技术已经逐步取代CRT显示器。其中，OLED具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动类型可分为无源OLED(PMOLED)和有源OLED(AMOLED)；其中，AMOLED器件为电流驱动，其对薄膜晶体管(Thin FilmTransistor，TFT)电流的要求非常严格。所以，AMOLED产品必须采用像素补偿电路来减少整个驱动过程中由于TFT不稳定导致的电流变化。双栅极(Dual gate)TFT由于良好的电学稳定性广泛应用于电路驱动中。
现有的AMOLED像素补偿电路通常涉及到多个TFT串联，如图1所示的一种双栅极TFT像素补偿电路，在数据线Vdata与供电压线Vdd这两条讯号线之间串联了两个双栅极TFT：TFT1与TFT2；图2为对应图1所示的双栅极TFT像素补偿电路的TFT基板结构，图3为图2所示的TFT基板结构中TFT组件与数据线、及供电压线的分布及连接示意图。
如图2和图3所示，所述TFT基板结构包括从下到上依次设置的基板100、第一金属层、栅极绝缘层300、半导体层、刻蚀阻挡层500、第二金属层、钝化层700、及第三金属层；所述第一金属层包括间隔设置的第一底栅极210、及第二底栅极230；所述半导体层包括间隔设置的第一半导体层420、及第二半导体层440；所述第二金属层包括间隔设置的第一源极610、连接电极620、及第二漏极630；所述第三金属层包括间隔设置的第一顶栅极820、及第二顶栅极840。
所述刻蚀阻挡层500上设有第一通孔510、第二通孔520、第三通孔530、及第四通孔540；所述第一源极610通过第一通孔510与所述第一半导体层420的一端相接触；所述连接电极620通过第二通孔520与所述第一半导体层420的另外一端相接触，同时通过第三通孔530与所述第二半导体层440的一端相接触；所述第二漏极630通过第四通孔540与所述第二半导体层440的另外一端相接触。
所述第一底栅极210、第一半导体层420、第一源极610、连接电极620、及第一顶栅极820构成第一双栅极TFT；所述第二底栅极230、第二半导体层440、连接电极620、第二漏极630、及第二顶栅极840构成第二双栅极TFT。
从图2和图3中可见，所述连接电极620同时充当第一双栅极TFT的第一漏极、以及第二双栅极TFT的第二源极，从而将第一双栅极TFT与第二双栅极TFT串连起来，然而，由于该连接电极620所在的第二金属层还分布有数据线Vdata、供电压线Vdd等讯号线，使得该连接电极620的设计规则(design rule)很小，而两个双栅极TFT之间再通过连接电极620桥接会导致该第二金属层的设计规则变得更小，不利于高开口率、及高分辨率的显示面板的制作。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，通过将连接两双栅极TFT的连接电极设置于第三金属层，避免了现有设计中将连接电极与数据线、供电压线等讯号线共同设置于第二金属层从而导致该连接电极与第二金属层的设计规则变小的问题，有利于高开口率、及高分辨率的显示面板的制作。
本发明的目的还在于提供一种TFT基板结构，其结构简单，具有高开口率及高分辨率。
为实现上述目的，本发明首先提供一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一基板，在所述基板上沉积第一金属层，并通过一道光刻制程图案化该第一金属层，形成间隔设置的第一底栅极、及与第二底栅极；
步骤2、在所述第一底栅极、第二底栅极、及基板上沉积栅极绝缘层；
步骤3、在所述栅极绝缘层上沉积一金属氧化物层，并通过一道光刻制程对该金属氧化物层进行图案化，形成间隔设置的第一半导体层、及第二半导体层；
所述第一半导体层包括第一沟道区、及分别位于该第一沟道区两侧的第一源极接触区与第一漏极接触区；所述第二半导体层包括第二沟道区、及分别位于该第二沟道区两侧的第二源极接触区与第二漏极接触区；
步骤4、在所述第一半导体层、第二半导体层、及栅极绝缘层上沉积一刻蚀阻挡层，并通过一道光刻制程在该刻蚀阻挡层上分别形成第一通孔与第二通孔，分别用于暴露第一源极接触区与第二漏极接触区；
步骤5、在所述刻蚀阻挡层上沉积第二金属层，并通过一道光刻制程图案化该第二金属层，形成间隔设置的第一源极、及第二漏极；
所述第一源极通过第一通孔与第一源极接触区相接触；所述第二漏极通过第二通孔与第二漏极接触区相接触；
步骤6、在所述第一源极、第二漏极、及刻蚀阻挡层上沉积一钝化层，并通过一道光刻制程在该钝化层和刻蚀阻挡层上分别形成第三通孔与第四通孔，用于暴露第一漏极接触区与第二源极接触区；
步骤7、在所述钝化层上沉积第三金属层，并通过一道光刻制程图案化该第三金属层，形成间隔设置的第一顶栅极、连接电极、及第二顶栅极；
所述连接电极分别通过第三通孔、及第四通孔与第一漏极接触区、及第二源极接触区相接触。
所述步骤1采用物理气相沉积法沉积所述第一金属层，所述第一金属层的材料为铜、铝、或钼，所述步骤1中的光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程；所述步骤2采用等离子增强化学气相沉积法沉积所述栅极绝缘层，所述栅极绝缘层的材料为氧化硅或氮化硅。
所述步骤3采用物理气相沉积法沉积所述该金属氧化物层，所述金属氧化物层的材料为铟镓锌氧化物；所述步骤3中的光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
所述步骤4采用化学气相沉积法沉积所述刻蚀阻挡层，所述刻蚀阻挡层的材料为氧化硅或氮化硅，所述步骤4中的光刻制程包括涂光阻、曝光、显影、干蚀刻、及去光阻制程；所述步骤5采用物理气相沉积法沉积所述第二金属层，所述第二金属层的材料为铜、铝、或钼，所述步骤5中的光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
所述步骤6采用化学气相沉积法沉积所述钝化层，所述钝化层的材料为氧化硅或氮化硅，所述步骤6中的光刻制程包括涂光阻、曝光、显影、干蚀刻、及去光阻制程；所述步骤7采用物理气相沉积法沉积所述第三金属层，所述第三金属层的材料为铜、铝、或钼，所述步骤7中的光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
本发明还提供一种TFT基板结构，其包括从下到上依次设置的：基板、第一金属层、栅极绝缘层、半导体层、刻蚀阻挡层、第二金属层、钝化层、及第三金属层；所述第一金属层包括间隔设置的第一底栅极、及第二底栅极；所述半导体层包括间隔设置的第一半导体层、及第二半导体层；所述第二金属层包括间隔设置的第一源极、及第二漏极；所述第三金属层包括间隔设置的第一顶栅极、连接电极、及第二顶栅极；
所述刻蚀阻挡层上形成有第一通孔与第二通孔；所述钝化层和刻蚀阻挡层上形成有第三通孔、及第四通孔；所述第一源极通过第一通孔与第一半导体层的一端相接触，所述连接电极通过第三通孔与第一半导体层的另外一端相接触，同时通过第四通孔与第二半导体层的一端相接触；所述第二漏极通过第二通孔与所述第二半导体层的另外一端相接触；
所述第一底栅极、第一半导体层、第一源极、连接电极、及第一顶栅极构成第一双栅极TFT；所述第二底栅极、第二半导体层、连接电极、第二漏极、及第二顶栅极构成第二双栅极TFT；所述连接电极同时充当第一双栅极TFT的第一漏极、及第二双栅极TFT的第二源极，从而将第一双栅极TFT与第二双栅极TFT串联起来。
所述第一半导体层包括第一沟道区、及分别位于该第一沟道区两侧的第一源极接触区与第一漏极接触区；所述第二半导体层包括第二沟道区、及分别位于该第二沟道区两侧的第二源极接触区与第二漏极接触区。
所述第一通孔、第三通孔、第四通孔、及第二通孔分别用于暴露第一源极接触区、第一漏极接触区、第二源极接触区、及第二漏极接触区。
所述第一源极通过第一通孔与第一源极接触区相接触，所述连接电极分别通过第三通孔、及第四通孔与第一漏极接触区、及第二源极接触区相接触，所述第二漏极通过第二通孔与所述第二漏极接触区相接触。
所述半导体层的材料为金属氧化物。
本发明的有益效果：本发明提供的一种TFT基板的制作方法，通过将连接两双栅极TFT的连接电极设置于第三金属层，避免了现有设计中将连接电极与数据线、供电压线等讯号线共同设置于第二金属层从而导致该连接电极与第二金属层的设计规则变小的问题，有利于提高显示面板的开口率、及分辨率。本发明提供的一种TFT基板结构，其结构简单，具有高开口率及高分辨率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的一种双栅极TFT像素补偿电路的电路图；
图2为对应图1所示的双栅极TFT像素补偿电路的TFT基板结构的示意图；
图3为图2所示的TFT基板结构中TFT组件与数据线、及供电压线的分布及连接示意图；
图4为本发明的TFT基板的制作方法步骤1的示意图；
图5为本发明的TFT基板的制作方法步骤2的示意图；
图6为本发明的TFT基板的制作方法步骤3的示意图；
图7为本发明的TFT基板的制作方法步骤4的示意图；
图8为本发明的TFT基板的制作方法步骤5的示意图；
图9为本发明的TFT基板的制作方法步骤6的示意图；
图10为本发明的TFT基板的制作方法步骤7的示意图暨本发明的TFT基板结构的剖面示意图；
图11为图10所示的TFT基板结构中TFT组件与数据线、及供电压线的分布及连接示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图4至图11，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤1、如图4所示，提供一基板1，在所述基板1上沉积第一金属层，并通过一道光刻制程图案化该第一金属层，形成间隔设置的第一底栅极21、及与第二底栅极23。
优选的，所述基板1为玻璃基板。
具体地，该步骤1采用物理气相沉积法(Physical Vapor Deposition，PVD)沉积所述第一金属层；优选的，所述第一金属层的材料为铜、铝、或钼。
所述光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
步骤2、如图5所示，在所述第一底栅极21、第二底栅极23、及基板1上沉积栅极绝缘层3。
具体地，该步骤2采用等离子增强化学气相沉积法(Plasma EnhancedChemical Vapor Deposition，PECVD)沉积所述栅极绝缘层3；优选的，所述栅极绝缘层3的材料为氧化硅或氮化硅。
步骤3、如图6所示，在所述栅极绝缘层3上沉积一金属氧化物层，并通过一道光刻制程对该金属氧化物层进行图案化，形成间隔设置的第一半导体层41、及第二半导体层43。
所述第一半导体层41包括第一沟道区412、及分别位于该第一沟道区412两侧的第一源极接触区414与第一漏极接触区416；所述第二半导体层43包括第二沟道区432、及分别位于该第二沟道区432两侧的第二源极接触区434与第二漏极接触区436。
具体地，该步骤3采用物理气相沉积法沉积所述金属氧化物层，优选的，所述金属氧化物层的材料为铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)。
所述光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
步骤4、如图7所示，在所述第一半导体层41、第二半导体层43、及栅极绝缘层3上沉积一刻蚀阻挡层5，并通过一道光刻制程在该刻蚀阻挡层5上分别形成第一通孔51与第二通孔52，分别用于暴露第一源极接触区414与第二漏极接触区436。
具体地，该步骤4采用化学气相沉积法(Chemical Vapor Deposition，CVD)沉积所述刻蚀阻挡层5。
所述光刻制程包括涂光阻、曝光、显影、干蚀刻、及去光阻制程。
步骤5、如图8所示，在所述刻蚀阻挡层5上沉积第二金属层，并通过一道光刻制程图案化该第二金属层，形成间隔设置的第一源极61、及第二漏极62。
所述第一源极61通过第一通孔51与第一源极接触区414相接触；所述第二漏极62通过第二通孔52与第二漏极接触区436相接触。
具体地，该步骤5采用物理气相沉积法沉积所述第二金属层；优选的，所述第二金属层的材料为铜、铝、或钼。
所述光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
步骤6、如图9所示，在所述第一源极61、第二漏极62、及刻蚀阻挡层5上沉积一钝化层7，并通过一道光刻制程在该钝化层7和刻蚀阻挡层5上形成第三通孔73与第四通孔74，分别用于暴露第一漏极接触区416与第二源极接触区434。
具体地，该步骤6采用化学气相沉积法沉积所述钝化层7；优选的，所述钝化层7的材料为氧化硅或氮化硅。
所述光刻制程包括涂光阻、曝光、显影、干蚀刻、及去光阻制程。
步骤7、如图10所示，在所述钝化层7上沉积第三金属层，并通过一道光刻制程图案化该第三金属层，形成间隔设置的第一顶栅极82、连接电极83、及第二顶栅极84。
所述连接电极83分别通过第三通孔73、及第四通孔74与第一漏极接触区416、及第二源极接触区434相接触。
具体地，该步骤7采用物理气相沉积法沉积所述第三金属层；优选的，所述第三金属层的材料为铜、铝、或钼。
所述光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
上述TFT基板的制作方法将所述第一源极61、及第二漏极62设置于第二金属层，而将所述连接电极83与第一、第二顶栅极82、84设置于第三金属层，避免了现有设计中将连接电极与数据线、供电压线等讯号线共同设置于第二金属层从而导致该连接电极与第二金属层的设计规则变小的问题，有利于提高显示面板的开口率、及分辨率。
请参阅图10、图11，本发明还提供一种由上述制作方法制备的TFT基板结构，其包括从下到上依次设置的：基板1、第一金属层、栅极绝缘层3、半导体层、刻蚀阻挡层5、第二金属层、钝化层7、及第三金属层；所述第一金属层包括间隔设置的第一底栅极21、及第二底栅极23；所述半导体层包括间隔设置的第一半导体层41、及第二半导体层43；所述第二金属层包括间隔设置的第一源极61、及第二漏极62；所述第三金属层包括间隔设置的第一顶栅极82、连接电极83、及第二顶栅极84。
所述刻蚀阻挡层5上形成有第一通孔51与第二通孔52；所述钝化层7与刻蚀阻挡层5上形成有第三通孔73、及第四通孔74；所述第一源极61通过第一通孔51与第一半导体层41的一端相接触，所述连接电极63通过第三通孔73与第一半导体层41的另外一端相接触，同时通过第四通孔74与第二半导体层43的一端相接触；所述第二漏极62通过第二通孔52与所述第二半导体层43的另外一端相接触。
具体地，所述第一半导体层41包括第一沟道区412、及分别位于该第一沟道区412两侧的第一源极接触区414与第一漏极接触区416；所述第二半导体层43包括第二沟道区432、及分别位于该第二沟道区432两侧的第二源极接触区434与第二漏极接触区436；
所述第一通孔51、第三通孔27、第四通孔74、及第二通孔52分别用于暴露第一源极接触区414、第一漏极接触区416、第二源极接触区434、及第二漏极接触区436；
所述第一源极61通过第一通孔51与第一源极接触区414相接触，所述连接电极63分别通过第三通孔73、及第四通孔74与第一漏极接触区416、及第二源极接触区434相接触，所述第二漏极62通过第二通孔52与所述第二漏极接触区436相接触。
所述第一底栅极21、第一半导体层41、第一源极61、连接电极83、及第一顶栅极82构成第一双栅极TFT；所述第二底栅极23、第二半导体层44、连接电极83、第二漏极62、及第二顶栅极84构成第二双栅极TFT；所述连接电极83同时充当第一双栅极TFT的第一漏极、及第二双栅极TFT的第二源极，从而将第一双栅极TFT与第二双栅极TFT串联起来。
优选的，所述基板1为玻璃基板。
优选的，所述第一金属层的材料为铜、铝、或钼。
优选的，所述栅极绝缘层3的材料为氧化硅或氮化硅。
具体地，所述半导体层的材料为金属氧化物，优选的，所述金属氧化物为铟镓锌氧化物。
优选的，所述刻蚀阻挡层5的材料为氧化硅或氮化硅。
优选的，所述第二金属层的材料为铜、铝、或钼。
优选的，所述钝化层7的材料为氧化硅或氮化硅。
优选的，所述第三金属层的材料为铜、铝、或钼。
综上所述，本发明的TFT基板的制作方法，通过将连接两双栅极TFT的连接电极设置于第三金属层，避免了现有设计中将连接电极与数据线、供电压线等讯号线共同设置于第二金属层从而导致该连接电极与第二金属层的设计规则变小的问题，有利于提高显示面板的开口率、及分辨率。本发明的TFT基板结构，其结构简单，具有高开口率及高分辨率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一基板(1)，在所述基板(1)上沉积第一金属层，并通过一道光刻制程图案化该第一金属层，形成间隔设置的第一底栅极(21)、及第二底栅极(23)；
步骤2、在所述第一底栅极(21)、第二底栅极(23)、及基板(1)上沉积栅极绝缘层(3)；
步骤3、在所述栅极绝缘层(3)上沉积一金属氧化物层，并通过一道光刻制程对该金属氧化物层进行图案化，形成间隔设置的第一半导体层(41)、及第二半导体层(43)；
所述第一半导体层(41)包括第一沟道区(412)、及分别位于该第一沟道区(412)两侧的第一源极接触区(414)与第一漏极接触区(416)；所述第二半导体层(43)包括第二沟道区(432)、及分别位于该第二沟道区(432)两侧的第二源极接触区(434)与第二漏极接触区(436)；
步骤4、在所述第一半导体层(41)、第二半导体层(43)、及栅极绝缘层(3)上沉积一刻蚀阻挡层(5)，并通过一道光刻制程在该刻蚀阻挡层(5)上分别形成第一通孔(51)与第二通孔(52)，分别用于暴露第一源极接触区(414)与第二漏极接触区(436)；
步骤5、在所述刻蚀阻挡层(5)上沉积第二金属层，并通过一道光刻制程图案化该第二金属层，形成间隔设置的第一源极(61)、及第二漏极(62)；
所述第一源极(61)通过第一通孔(51)与第一源极接触区(414)相接触；所述第二漏极(62)通过第二通孔(52)与第二漏极接触区(436)相接触；
步骤6、在所述第一源极(61)、第二漏极(62)、及刻蚀阻挡层(5)上沉积一钝化层(7)，并通过一道光刻制程在该钝化层(7)和刻蚀阻挡层(5)上形成第三通孔(73)与第四通孔(74)，分别用于暴露第一漏极接触区(416)与第二源极接触区(434)；
步骤7、在所述钝化层(7)上沉积第三金属层，并通过一道光刻制程图案化该第三金属层，形成间隔设置的第一顶栅极(82)、连接电极(83)、及第二顶栅极(84)；
所述连接电极(83)分别通过第三通孔(73)、及第四通孔(74)与第一漏极接触区(416)、及第二源极接触区(434)相接触。
2.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤1采用物理气相沉积法沉积所述第一金属层，所述第一金属层的材料为铜、铝、或钼，所述步骤1中的光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程；所述步骤2采用等离子增强化学气相沉积法沉积所述栅极绝缘层(3)，所述栅极绝缘层(3)的材料为氧化硅或氮化硅。
3.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤3采用物理气相沉积法沉积所述金属氧化物层，所述金属氧化物层的材料为铟镓锌氧化物；所述步骤3中的光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
4.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤4采用化学气相沉积法沉积所述刻蚀阻挡层(5)，所述刻蚀阻挡层(5)的材料为氧化硅或氮化硅，所述步骤4中的光刻制程包括涂光阻、曝光、显影、干蚀刻、及去光阻制程；所述步骤5采用物理气相沉积法沉积所述第二金属层，所述第二金属层的材料为铜、铝、或钼，所述步骤5中的光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
5.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤6采用化学气相沉积法沉积所述钝化层(7)，所述钝化层(7)的材料为氧化硅或氮化硅，所述步骤6中的光刻制程包括涂光阻、曝光、显影、干蚀刻、及去光阻制程；所述步骤7采用物理气相沉积法沉积所述第三金属层，所述第三金属层的材料为铜、铝、或钼，所述步骤7中的光刻制程包括涂光阻、曝光、显影、湿蚀刻、及去光阻制程。
6.一种TFT基板结构，其特征在于，包括从下到上依次设置的：基板(1)、第一金属层、栅极绝缘层(3)、半导体层、刻蚀阻挡层(5)、第二金属层、钝化层(7)、及第三金属层；所述第一金属层包括间隔设置的第一底栅极(21)、及第二底栅极(23)；所述半导体层包括间隔设置的第一半导体层(41)、及第二半导体层(43)；所述第二金属层包括间隔设置的第一源极(61)、及第二漏极(62)；所述第三金属层包括间隔设置的第一顶栅极(82)、连接电极(83)、及第二顶栅极(84)；
所述刻蚀阻挡层(5)上形成有第一通孔(51)与第二通孔(52)；所述钝化层(7)和刻蚀阻挡层(5)上形成有第三通孔(73)、及第四通孔(74)；所述第一源极(61)通过第一通孔(51)与第一半导体层(41)的一端相接触，所述连接电极(63)通过第三通孔(73)与第一半导体层(41)的另外一端相接触，同时通过第四通孔(74)与第二半导体层(43)的一端相接触；所述第二漏极(62)通过第二通孔(52)与所述第二半导体层(43)的另外一端相接触；
所述第一底栅极(21)、第一半导体层(41)、第一源极(61)、连接电极(83)、及第一顶栅极(82)构成第一双栅极TFT；所述第二底栅极(23)、第二半导体层(43)、连接电极(83)、第二漏极(62)、及第二顶栅极(84)构成第二双栅极TFT；所述连接电极(83)同时充当第一双栅极TFT的第一漏极、及第二双栅极TFT的第二源极，从而将第一双栅极TFT与第二双栅极TFT串联起来。
7.如权利要求6所述的TFT基板结构，其特征在于，所述第一半导体层(41)包括第一沟道区(412)、及分别位于该第一沟道区(412)两侧的第一源极接触区(414)与第一漏极接触区(416)；所述第二半导体层(43)包括第二沟道区(432)、及分别位于该第二沟道区(432)两侧的第二源极接触区(434)与第二漏极接触区(436)。
8.如权利要求7所述的TFT基板结构，其特征在于，所述第一通孔(51)、第三通孔(73)、第四通孔(74)、及第二通孔(52)分别用于暴露第一源极接触区(414)、第一漏极接触区(416)、第二源极接触区(434)、及第二漏极接触区(436)。
9.如权利要求8所述的TFT基板结构，其特征在于，所述第一源极(61)通过第一通孔(51)与第一源极接触区(414)相接触，所述连接电极(83)分别通过第三通孔(73)、及第四通孔(74)与第一漏极接触区(416)、及第二源极接触区(434)相接触，所述第二漏极(62)通过第二通孔(52)与所述第二漏极接触区(436)相接触。
10.如权利要求6所述的TFT基板结构，其特征在于，所述半导体层的材料为金属氧化物。
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