CN104956489B - 半导体装置、集成电路和形成半导体装置的方法 - Google Patents

半导体装置、集成电路和形成半导体装置的方法 Download PDF

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CN104956489B
CN104956489B CN201380072129.7A CN201380072129A CN104956489B CN 104956489 B CN104956489 B CN 104956489B CN 201380072129 A CN201380072129 A CN 201380072129A CN 104956489 B CN104956489 B CN 104956489B
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source
contact
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drain
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CN104956489A (zh
Inventor
A.迈泽
R.魏斯
F.希尔勒
M.韦莱迈尔
M.聪德尔
P.伊尔西格勒
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Infineon Technologies AG
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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    • H01L29/107—Substrate region of field-effect devices
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    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
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    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CN201380072129.7A 2012-12-03 2013-12-03 半导体装置、集成电路和形成半导体装置的方法 Active CN104956489B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/692059 2012-12-03
US13/692,059 US9799762B2 (en) 2012-12-03 2012-12-03 Semiconductor device and method of manufacturing a semiconductor device
US14/082,491 US9735243B2 (en) 2013-11-18 2013-11-18 Semiconductor device, integrated circuit and method of forming a semiconductor device
US14/082491 2013-11-18
PCT/EP2013/003645 WO2014086479A1 (en) 2012-12-03 2013-12-03 Semiconductor device, integrated circuit and method of forming a semiconductor device

Publications (2)

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CN104956489A CN104956489A (zh) 2015-09-30
CN104956489B true CN104956489B (zh) 2018-03-02

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KR (1) KR101766561B1 (de)
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EP3422415B1 (de) * 2014-02-28 2023-08-02 LFoundry S.r.l. Halbleiterbauelement mit einem lateral diffundierten mos transistor
DE102014114184B4 (de) * 2014-09-30 2018-07-05 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleitervorrichtung und Halbleitervorrichtung
DE102015105679B4 (de) * 2015-04-14 2017-11-30 Infineon Technologies Ag Halbleitervorrichtung, integrierte schaltung und verfahren zum herstellen der halbleitervorrichtung
DE102015106688B4 (de) 2015-04-29 2020-03-12 Infineon Technologies Ag Schalter mit einem feldeffekttransistor, insbesondere in einer integrierten schaltung zur verwendung in systemen mit lasten
DE102016107714B4 (de) 2015-08-14 2019-07-18 Infineon Technologies Dresden Gmbh Halbleitervorrichtung mit einer Transistorzelle, die einen Sourcekontakt in einem Graben umfasst, Verfahren zum Herstellen der Halbleitervorrichtung und integrierte Schaltung
DE102015119771A1 (de) * 2015-11-16 2017-05-18 Infineon Technologies Ag Halbleitervorrichtung mit einem ersten Transistor und einem zweiten Transistor
DE102016101676B3 (de) 2016-01-29 2017-07-13 Infineon Technologies Ag Elektrische schaltung, die eine halbleitervorrichtung mit einem ersten transistor und einem zweiten transistor und eine steuerschaltung enthält
DE102016113393A1 (de) * 2016-07-20 2018-01-25 Infineon Technologies Ag Halbleitervorrichtung, die ein Transistor-Array und ein Abschlussgebiet enthält, und Verfahren zum Herstellen solch einer Halbleitervorrichtung
US10937874B2 (en) * 2016-08-10 2021-03-02 Nissan Motor Co., Ltd. Semiconductor device

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JP3971062B2 (ja) * 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
JP3356162B2 (ja) * 1999-10-19 2002-12-09 株式会社デンソー 半導体装置及びその製造方法
JP3534084B2 (ja) * 2001-04-18 2004-06-07 株式会社デンソー 半導体装置およびその製造方法
US7786533B2 (en) * 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US7888732B2 (en) * 2008-04-11 2011-02-15 Texas Instruments Incorporated Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric
US8193565B2 (en) * 2008-04-18 2012-06-05 Fairchild Semiconductor Corporation Multi-level lateral floating coupled capacitor transistor structures
JP2011009595A (ja) * 2009-06-29 2011-01-13 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
CN102157493B (zh) * 2010-02-11 2013-07-24 上海华虹Nec电子有限公司 金属塞及其制造方法
US8569842B2 (en) * 2011-01-07 2013-10-29 Infineon Technologies Austria Ag Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices

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WO2014086479A1 (en) 2014-06-12
KR20150082460A (ko) 2015-07-15
DE112013005770B4 (de) 2022-12-01
CN104956489A (zh) 2015-09-30
DE112013005770T5 (de) 2015-08-13
KR101766561B1 (ko) 2017-08-08

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