CN104952992A - Arc triangular pyramid patterned LED (light emitting diode) substrate and LED chip - Google Patents
Arc triangular pyramid patterned LED (light emitting diode) substrate and LED chip Download PDFInfo
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- CN104952992A CN104952992A CN201510217281.0A CN201510217281A CN104952992A CN 104952992 A CN104952992 A CN 104952992A CN 201510217281 A CN201510217281 A CN 201510217281A CN 104952992 A CN104952992 A CN 104952992A
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- 230000000694 effects Effects 0.000 abstract description 8
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- 230000004907 flux Effects 0.000 description 28
- 238000000605 extraction Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
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- 241001025261 Neoraja caerulea Species 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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Abstract
The invention discloses an arc triangular pyramid patterned LED (light emitting diode) substrate. A pattern of the substrate is formed by a plurality of identical-shape arc triangular pyramids arrayed on the surface of the substrate; a random horizontal section formed by the arc triangular pyramids is in a triangle-like shape with three arc sides. The invention further discloses an LED chip with the arc triangular pyramid patterned LED substrate. Compared with the prior art, the arc triangular pyramid patterned LED substrate and the LED chip with the same have the advantages that light emergence efficiency is higher, available effective light rays are greatly increased, and external quantum efficiency of the LED chip is improved; the arc triangular pyramid patterned LED substrate is capable of reducing adverse effects on nucleation on the premise of constant improvement of LED light emergence efficiency.
Description
Technical field
The present invention relates to LED chip field, particularly the graphical LED substrate of a kind of arc triangular pyramid and LED chip.
Background technology
Nowadays energy-conservation one of theme having become current era development, the energy-conservation inexorable trend having become development.Lighting consumer's enormous amount, electric consumption on lighting amount then accounts for 16% of total electricity consumption.The blue-ray LED of GaN base is very potential energy-saving and environment friendly ligthing paraphernalia.The light extraction efficiency of LED is determined jointly by internal quantum efficiency and external quantum efficiency.Current LED manufacture technology is very ripe, and internal quantum efficiency reaches higher level, and the space of lifting is relatively little.But GaN has higher refraction coefficient (n=2.45), the critical angle [θ of beam projecting
c=sin
-1(n
air/ n
gaN)] be only 24.6 °, cause there is serious total reflection phenomenon between LED chip and air, external quantum efficiency is difficult to improve.Afterwards for the improving countermeasure that this problem proposes, as introduced Bragg reflecting layer, photonic crystal, surface coarsening etc., improve the external quantum efficiency of LED all to a certain extent.And the patterned substrate technology proposed in recent years can improve the light extraction efficiency of Sapphire Substrate GaN base LED effectively, become the focus of current Sapphire Substrate GaN base LED field research.As the key of patterned substrate technology, underlay pattern develops so far, improves significantly, become the important channel of improving LED performance to LED light extraction effect and epitaxial quality.For meeting the requirement of device performance, the design several kinds of renewals of graph substrate, from initial flute profile to hexagon, taper, prismoid shaped etc., the effect of patterned substrate technology is approved.
The raising of underlay pattern to LED light performance is presented as two aspects: on the one hand, pattern changes the track of light by scattering/reflection, light is diminished (being less than the cirtical angle of total reflection) in the incidence angle of interface outgoing, thus transmission and going out, improve the recovery rate of light; On the other hand, pattern follow-up GaN growth can also be made to occur side direction builds brilliant effect, reduce crystal defect, improve internal quantum efficiency.The pattern of substrate is the key of patterned substrate technology, plays decisive role to the light extraction efficiency of LED.As the direct factor affecting light path, the parameter of pattern will certainly affect (comprising the length of side, height and spacing etc.) performance of LED in the choice.Pattern is the key of patterned substrate technology, plays conclusive effect to the light extraction efficiency of LED.The pattern of simple geometry can not meet present needs, and novel geometrical pattern needs research and finds.
Summary of the invention
In order to overcome the above-mentioned shortcoming of prior art with not enough, the object of the present invention is to provide the graphical LED substrate of a kind of arc triangular pyramid, substantially increasing the light extraction efficiency of LED, thus improving the external quantum efficiency of LED.
Another object of the present invention is to a kind of LED chip.
Object of the present invention is achieved through the following technical solutions:
The graphical LED substrate of a kind of arc triangular pyramid, the pattern of substrate is made up of the arc triangular pyramid that the multiple shapes being arranged in substrate surface are identical; Any level cross section of described arc triangular pyramid composition is the class triangle that three limits are all circular arc.
Three sides of described arc triangular pyramid are three convex surfaces that shape is identical.
The leg-of-mutton three sections of circular shapes of described class are identical.
The bottom surface of described arc triangular pyramid is bottom surface class triangle, and the central angle that the leg-of-mutton circular arc of composition bottom surface class is corresponding is 60 °, and corresponding radius is 1.0 ~ 3.0 μm; The height of arc triangular pyramid is 0.75 ~ 2.00 μm.
The arc triangular pyramid that described multiple shape is identical adopts rectangle or hexagonal arrangement mode.
The center distance d of adjacent arc triangular pyramid is 3 ~ 6 μm.
A kind of LED chip, comprises the graphical LED substrate of above-mentioned arc triangular pyramid.
Described LED chip comprises the graphical LED substrate of the arc triangular pyramid be arranged in order, N-type GaN layer, MQWs quantum well layer and P type GaN layer.
Compared with prior art, the present invention has the following advantages and beneficial effect:
(1) the present invention is by adopting arc triangular pyramid graphical LED substrate, and side is curved surface, and the incidence angle of light can be allowed to be less than the angle of total reflection, is conducive to allowing ght transmission and going out more, has more obvious effect to the raising of the light extraction efficiency of LED.
(2) the present invention is by arc triangular pyramid graph substrate, greatly enhance the ability that reflects photons arrives LED chip top and bottom, thus make more light from top, bottom transmission and going out, add the effective sunlight that can be fully used, enhance the light extraction efficiency of graphical sapphire substrate GaN base LED on the whole.
(3) arc triangular pyramid type graph substrate of the present invention can keep, under the prerequisite improving LED light extraction efficiency, reducing the adverse effect to forming core.
(4) the present invention has more excellent light extraction efficiency compared to the triangular pyramid underlay pattern of equivalent parameters on bottom and top, and therefore the present invention is suitable for making formal dress or flip LED.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the LED chip of embodiments of the invention 1.
Fig. 2 is the schematic diagram of the graphical LED substrate of arc triangular pyramid of embodiments of the invention 1.
Fig. 3 is the schematic diagram of the arc triangular pyramid monomer of embodiments of the invention 1.
Fig. 4 is the arrangement mode schematic diagram of the arc triangular pyramid of embodiments of the invention 1.
Fig. 5 is the arrangement mode schematic diagram of the arc triangular pyramid of embodiments of the invention 2.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the LED chip of the present embodiment is made up of the graphical LED substrate 11 of sapphire arc triangular pyramid, N-type GaN layer 12, MQWs quantum well layer 13 and the P type GaN layer 14 be arranged in order.
As shown in Figure 2, the graphical LED substrate 11 of arc triangular pyramid of the present embodiment, the pattern of substrate is made up of the arc triangular pyramid 15 that the multiple shapes being arranged in substrate surface are identical.As shown in Figure 3, any level cross section of described arc triangular pyramid composition is the class triangle that three limits are all circular arc, and three sections of circular shapes are identical, and the central angle that every section of circular arc is corresponding is 60 °, and corresponding radius is 2.0 μm; Height H is 1.4 μm.Three sides of described arc triangular pyramid are three convex surfaces that shape is identical.The arc triangular pyramid that described multiple shape is identical adopts rectangular arrangement pattern as shown in Figure 4, and the center distance d of adjacent arc triangular pyramid is 4 μm.
Embodiment 2
The LED chip of the present embodiment is made up of the graphical LED substrate of the arc triangular pyramid be arranged in order, N-type GaN layer, MQWs quantum well layer and P type GaN layer.
The graphical LED substrate of arc triangular pyramid of the present embodiment, the pattern of substrate is made up of the arc triangular pyramid that the multiple shapes being arranged in substrate surface are identical; Any level cross section of described arc triangular pyramid composition is the class triangle that three limits are all circular arc, and three sections of circular shapes are identical, and the central angle that described circular arc is corresponding is 60 °, and the radius that described circular arc is corresponding is 1.0 μm; Be highly 2.00 μm.Three sides of described arc triangular pyramid are three convex surfaces that shape is identical.The arc triangular pyramid that described multiple shape is identical adopts hexagonal arrangement mode as shown in Figure 5, and the center distance d of adjacent arc triangular pyramid is 3 μm.
Embodiment 3
The LED chip of the present embodiment is made up of the graphical LED substrate of the arc triangular pyramid be arranged in order, N-type GaN layer, MQWs quantum well layer and P type GaN layer.
The graphical LED substrate of arc triangular pyramid of the present embodiment, the pattern of substrate is made up of the arc triangular pyramid that the multiple shapes being arranged in substrate surface are identical; Any level cross section of described arc triangular pyramid composition is the class triangle that three limits are all circular arc, and three sections of circular shapes are identical, and the central angle that described circular arc is corresponding is 60 °, and the radius that described circular arc is corresponding is 3.0 μm; Be highly 0.75 μm.Three sides of described arc triangular pyramid are three convex surfaces that shape is identical.The arc triangular pyramid that described multiple shape is identical adopts rectangle or hexagonal arrangement mode, and the center distance d of adjacent arc triangular pyramid is 6 μm.
Embodiment 4
The graph substrate of the LED chip of the present embodiment, the pattern of substrate is made up of the arc triangular pyramid that the multiple shapes being arranged in substrate surface are identical, and the high H of each arc triangular pyramid is 1.5 μm; The center distance d of adjacent arc triangular pyramid bottom surface circle is 3.5 μm; Described circular arc respective radius is 2 μm; The arc triangular pyramid that described multiple shape is identical adopts hexagonal arrangement mode.
Test case:
Adopt the graph substrate of optical analysis software TracePro to LED chip of the present invention to do simulation test, simulation test process is as follows:
(1) substrate builds: the modeling function adopting TracePro to carry realizes the making of substrate, and substrate dimension is 120 μm × 120 μm × 100 μm, in rectangular-shaped.
(2) arc triangular pyramid design producing: adopt the Plotting Function of Solidworks to realize the making of arc triangular pyramid pattern, the high H of arc triangular pyramid is 0.75 ~ 2.00 μm; The center distance d of adjacent arc triangular pyramid is 3 ~ 6 μm; The central angle that the leg-of-mutton circular arc of composition bottom surface class is corresponding is 60 °, and corresponding radius is 1.0 ~ 3.0 μm; The string that circular arc is corresponding is equal with corresponding radius; The string composition equilateral triangle that three sections of circular arcs are corresponding; Arc triangular pyramid is hexagonal arrangement, or rectangular arrangement.
(3) epitaxial loayer builds: the modeling function adopting TracePro to carry realizes the making of n-type GaN layer, MQWs quantum well layer, p-type GaN layer, n-type GaN layer is of a size of 120 μm × 120 μm × 4 μm, MQW quantum well layer is of a size of 120 μm × 120 μm × 50nm, and p-type GaN layer is of a size of 120 μm × 120 μm × 3 μm.
(4) target surface builds: the modeling function adopting TracePro to carry realizes the making of six layers of target surface, six layers of target surface are placed in upper and lower, the direction, front, rear, left and right of LED chip respectively, upper and lower target surface is of a size of 120 μm × 120 μm × 3 μm, forward and backward target surface (the long limit of opposite chip) is of a size of 120 μm × 120 μm × 3 μm, and left and right target surface (minor face of opposite chip) is of a size of 120 μm × 120 μm × 3 μm.
(5) N-type GaN layer and graph substrate contact-making surface corresponding pattern build: insert patterned layer that Solidworks sets up on substrate layer, adopt the difference of TracePro to subtract functional realiey N-GaN layer corresponding pattern and build.
(6) setting parameter of each material layer: the refractive index of Sapphire Substrate is 1.67, N-shaped GaN, MQWs quantum well, P type GaN material refractive index are 2.45, four is all the light of 450nm for wavelength, and temperature is set to 300K, does not consider to absorb the impact with extinction coefficient.
(7) quantum well layer surface source of light setting, it is characterized in that: quantum well layer upper and lower surface respectively arranges a surface source of light attribute, transmitting form is luminous flux, rink corner is distributed as the luminous field pattern of Lambertian, luminous flux is 5000a.u., total light number 3000, minimum light number 10.
(8) ray tracing: utilize software subsidiary clear off system, ray tracing is carried out to the LED chip model of above-mentioned structure, obtains the luminous flux data of top, bottom, side respectively.
Test result is as follows:
Embodiment 1: the top light flux of arc triangular pyramid substrate LED is 2146.8a.u., and bottom light flux is 2244.2a.u., and ambient light flux is 3123.75a.u., and total light flux is 7514.75a.u..Compared with the common triangular pyramid patterned substrate of equivalent parameters, the top of arc triangular pyramid patterned substrate LED chip, bottom and ambient light flux improve 2.80%, 9.92% and 4.43% respectively, and its total light flux improves 5.53%.
Embodiment 2: the top light flux of arc triangular pyramid substrate LED is 1439.9a.u., and bottom light flux is 1841.4a.u., and ambient light flux is 3222.63a.u., and total light flux is 6503.93a.u..Compared with the triangular pyramid patterned substrate of equivalent parameters, top, the bottom light flux of arc triangular pyramid patterned substrate LED chip improve 25.22%, 6.48% respectively, and its total light flux improves 5.03%.
Embodiment 3: the top light flux of arc triangular pyramid substrate LED is 1385.4a.u., and bottom light flux is 1417.1a.u., and ambient light flux is 4719.8a.u., and total light flux is 7522.3a.u..Compared with the triangular pyramid patterned substrate of equivalent parameters, the ambient light flux of arc triangular pyramid patterned substrate LED chip improves 9.01%, and its total light flux improves 1.65%.
Embodiment 4: the top light flux of arc triangular pyramid substrate LED is 2372.5a.u., and bottom light flux is 2366.8a.u., and ambient light flux is 2989.39a.u., and total light flux is 7728.69a.u..Compared with the triangular pyramid patterned substrate of equivalent parameters, the top of arc triangular pyramid patterned substrate LED chip, bottom and ambient light flux improve 10.70%, 8.84% and 3.99% respectively, and its total light flux improves 7.47%.
Known arc triangular pyramid type patterned substrate to have had in light extraction efficiency compared to common triangular pyramid patterned substrate LED chip and has further promoted, especially very remarkable to the effect of optimization of top and bottom light flux.
Above-described embodiment is the present invention's preferably execution mode; but embodiments of the present invention are not limited by the examples; change, the modification done under other any does not deviate from Spirit Essence of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (8)
1. the graphical LED substrate of arc triangular pyramid, is characterized in that, the pattern of substrate is made up of the arc triangular pyramid that the multiple shapes being arranged in substrate surface are identical; Any level cross section of described arc triangular pyramid is the class triangle that three limits are all circular arc.
2. the graphical LED substrate of arc triangular pyramid according to claim 1, is characterized in that, three sides of described arc triangular pyramid are three convex surfaces that shape is identical.
3. the graphical LED substrate of arc triangular pyramid according to claim 1, is characterized in that, the leg-of-mutton three sections of circular shapes of described class are identical.
4. the graphical LED substrate of arc triangular pyramid according to claim 1, is characterized in that, the bottom surface of described arc triangular pyramid is bottom surface class triangle, and the central angle that the leg-of-mutton circular arc of composition bottom surface class is corresponding is 60 °, and corresponding radius is 1.0 ~ 3.0 μm; The height of arc triangular pyramid is 0.75 ~ 2.00 μm.
5. the graphical LED substrate of arc triangular pyramid according to claim 1, is characterized in that, the arc triangular pyramid that described multiple shape is identical adopts rectangle or hexagonal arrangement mode.
6. the graphical LED substrate of arc triangular pyramid according to claim 1 or 5, it is characterized in that, the center distance d of adjacent arc triangular pyramid is 3 ~ 6 μm.
7. a LED chip, is characterized in that, comprises the graphical LED substrate of arc triangular pyramid described in any one of claim 1 ~ 6.
8. LED chip according to claim 7, is characterized in that, described LED chip comprises the graphical LED substrate of the arc triangular pyramid be arranged in order, N-type GaN layer, MQWs quantum well layer and P type GaN layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510217281.0A CN104952992A (en) | 2015-04-30 | 2015-04-30 | Arc triangular pyramid patterned LED (light emitting diode) substrate and LED chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510217281.0A CN104952992A (en) | 2015-04-30 | 2015-04-30 | Arc triangular pyramid patterned LED (light emitting diode) substrate and LED chip |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074620A (en) * | 2009-11-25 | 2011-05-25 | 广镓光电股份有限公司 | Semiconductor light-emitting device |
| CN202996886U (en) * | 2012-12-15 | 2013-06-12 | 华南理工大学 | Pattern-optimized LED chip graphical substrate and LED chip |
| CN103904182A (en) * | 2012-12-28 | 2014-07-02 | 晶能光电（常州）有限公司 | Inverted LED chip with patterned substrate and preparation method thereof |
| KR20150010482A (en) * | 2013-07-19 | 2015-01-28 | 주식회사 엘지에스 | Substrate for semiconductor light emitting device and method of manufacturing the same |
| CN104393134A (en) * | 2014-11-28 | 2015-03-04 | 华南理工大学 | LED graphical optimization substrate of petal type cone pattern and LED chip |
| CN204596825U (en) * | 2015-04-30 | 2015-08-26 | 华南理工大学 | A kind of graphical LED substrate of arc triangular pyramid and LED chip |
-
2015
- 2015-04-30 CN CN201510217281.0A patent/CN104952992A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074620A (en) * | 2009-11-25 | 2011-05-25 | 广镓光电股份有限公司 | Semiconductor light-emitting device |
| CN202996886U (en) * | 2012-12-15 | 2013-06-12 | 华南理工大学 | Pattern-optimized LED chip graphical substrate and LED chip |
| CN103904182A (en) * | 2012-12-28 | 2014-07-02 | 晶能光电（常州）有限公司 | Inverted LED chip with patterned substrate and preparation method thereof |
| KR20150010482A (en) * | 2013-07-19 | 2015-01-28 | 주식회사 엘지에스 | Substrate for semiconductor light emitting device and method of manufacturing the same |
| CN104393134A (en) * | 2014-11-28 | 2015-03-04 | 华南理工大学 | LED graphical optimization substrate of petal type cone pattern and LED chip |
| CN204596825U (en) * | 2015-04-30 | 2015-08-26 | 华南理工大学 | A kind of graphical LED substrate of arc triangular pyramid and LED chip |
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Application publication date: 20150930 |