CN103022302A - Patterned substrate of pattern improved LED chip and LED chip containing the same - Google Patents
Patterned substrate of pattern improved LED chip and LED chip containing the same Download PDFInfo
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- CN103022302A CN103022302A CN2012105461912A CN201210546191A CN103022302A CN 103022302 A CN103022302 A CN 103022302A CN 2012105461912 A CN2012105461912 A CN 2012105461912A CN 201210546191 A CN201210546191 A CN 201210546191A CN 103022302 A CN103022302 A CN 103022302A
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Abstract
The invention discloses a patterned substrate of pattern improved LED chip. The pattern of the substrate is composed of a plurality of regular triangular pyramids with the same shape which are arranged on the surface of the substrate, and the inclination angle alpha of the regular triangular pyramids is 60 DEG to 65 DEG. The space D of the adjacent regular triangular pyramids is 1 to 1.4 times the length A of the side of the regular triangular pyramids. The invention further discloses a LED chip containing the patterned substrate of pattern improved LED chip. Compared with the prior art, the LED chip containing the patterned substrate of pattern improved LED chip has better extraction efficiency than a LED chip with a common substrate, and is convenient in popularization and application. According to the patterned substrate of pattern improved LED chip and LED chip containing the same, the regular triangular pyramids graph accords with the crystal lattice structure of GaN, and the target pattern can be easily obtained in practical processing.
Description
Technical field
The present invention relates to led chip, particularly a kind of patterned substrate and led chip of the led chip through pattern optimization.
Background technology
In order to improve internal quantum efficiency and the light extraction efficiency of GaN base LED, existing multinomial technology is used in the middle of the LED research, such as laterally overgrown technology, surface coarsening, nanometer embossing and metallic mirror surface reflector technology etc. at present.And the patterned substrate technology that proposes in recent years can improve the light extraction efficiency of Sapphire Substrate GaN base LED effectively, becomes the focus of present Sapphire Substrate GaN base LED area research.As the key of patterned substrate technology, underlay pattern develops so far, and LED light extraction effect and epitaxial quality are improved significantly, has become the important channel of improving the LED performance.
Underlay pattern is presented as two aspects to the raising of LED optical property: on the one hand, pattern changes the track of light by scattering/reflection, and light is diminished (less than the cirtical angle of total reflection) in the incidence angle of interface outgoing, thereby transmission and going out improves the recovery rate of light; On the other hand, pattern can also reduce crystal defect so that side direction brilliant effect of heap of stone appears in follow-up GaN growth, improves internal quantum efficiency.For satisfying the requirement of device performance, the design of pattern is several kinds of renewals, and from initial flute profile to hexagon, taper, prismoid shaped etc., the effect of patterned substrate technology is approved.
The pattern of substrate is the key of patterned substrate technology, and the light extraction efficiency of LED is played decisive role.As the direct factor that affects light path, the parameter of pattern will certainly affect (comprising the length of side, height and spacing etc.) performance of LED in the choice.The people such as J.H.Cheng reported that cone shaped pattern can cause larger dislocation.In order to reduce dislocation, should take the less angle of chamfer, but the little angle of chamfer can weaken figure to reflection of light or scattering effect, therefore need to seek a balance point.It is 3 μ m in the Sapphire Substrate preparation length of side that the people such as D.S.Wuu utilize wet etching technique, the degree of depth is the positive triangular pyramid figure of 1.5 μ m, adopt the mocvd method growing GaN and make chip, it is carried out optic test, the external quantum efficiency of finding the graphical sapphire substrate GaN-based LED is different because of the change of pattern density, and the power output of patterned substrate LED promotes 25% than the power output of common LED.In addition, the human nanometer embossings such as R.Hsueh are at the nano level underlay pattern of Sapphire Substrate preparation, the light intensity of the led chip that this substrate produces and light emission rate all are higher than common Sapphire Substrate LED, have improved respectively 67% and 38%, also are better than micron order graph substrate LED.But be not that dimension of picture is less, the performance of LED is just better, and the relation between dimension of picture and LED performance still needs balance.Studies show that: along with reducing of pattern-pitch, be prone to the cavity that has little time to heal and produce owing to the GaN growth at GaN and sapphire interface, and cause the more dislocation of epitaxial loayer, even if light extraction efficiency promotes to some extent, but the increase of epitaxial loayer dislocation can reduce the led chip life-span.In addition, the nano-scale patterns manufacturing cost is high, and industrialization is difficulty relatively, has also greatly limited it and has applied.This shows that the optimization of dimension of picture and LED performance also needs further research.
Even if patterned substrate has increased substantially the light extraction efficiency of LED, but for the graph substrate take triangular pyramid as basic pattern, do not have yet at present research can accurately point out its best pattern height, spacing, pattern density etc., the application of triangular pyramid graph substrate pattern lacks the design objective of a cover system.In addition, on the optimization problem of pattern dimension, solve that size is dwindled and its balance between GaN growth quality is damaged, under the prerequisite that improves light extraction efficiency, guarantee crystalloid amount better of heap of stone, accomplish raising LED aspect of performance truly, still require study.Therefore, the most optimized parameter of determining triangular pyramid patterned substrate pattern needs to be resolved hurrily.
Summary of the invention
Above-mentioned shortcoming and deficiency in order to overcome prior art the object of the present invention is to provide a kind of led chip patterned substrate through pattern optimization, have the high advantage of light extraction efficiency.
Another object of the present invention is to provide the led chip that comprises above-mentioned patterned substrate.
Purpose of the present invention realizes by following scheme:
A kind of patterned substrate of the led chip through pattern optimization, the pattern of substrate is comprised of the identical positive triangular pyramid of a plurality of shapes that are arranged in substrate surface, and the inclination alpha of positive triangular pyramid is 60 ° ~ 65 °; The spacing d of adjacent positive triangular pyramid is 1 ~ 1.4 times of length of side a of described positive triangular pyramid.
The positive triangular pyramid that described a plurality of shape is identical adopts the rectangular arranged mode.
The positive triangular pyramid that described a plurality of shape is identical adopts the hexagonal arrangement mode.
A kind of led chip comprises the patterned substrate of above-mentioned led chip through pattern optimization.
Compared with prior art, the present invention has the following advantages and beneficial effect:
(1) the present invention is by optimizing the pattern parameter of positive triangular pyramid patterned substrate, greatly improved the ability at reflection photon arrival led chip top, thereby make more light reflections to the chip top, strengthen the light extraction efficiency of patterned substrate GaN base LED, compare common pattern-free substrate LED, total light flux increases to 2.46 times, and the top light flux increases to 3.38 times, and the bottom light flux increases to 2.65 times.
(2) the present invention has the light extraction efficiency more excellent than general substrate led chip, and positive triangular pyramid figure meets the lattice structure of GaN crystal, and actual handling ease obtains target pattern, and is easy to utilize.
(3) the present invention adopts the pattern parameter of optimization, avoids the too large or too little of heap of stone brilliant defective that causes of Distances Between Neighboring Edge Points, has further improved crystalloid amount of heap of stone, thereby has improved the internal quantum efficiency of LED.
Description of drawings
Fig. 1 is the schematic diagram of the led chip of embodiment 1.
Fig. 2 is the schematic diagram of patterned substrate of the led chip of embodiment 1.
Fig. 3 is the monomer schematic diagram of the positive triangular pyramid figure that adopts of the patterned substrate of the led chip of embodiment 1, and the parameter of positive triangular pyramid pattern comprises inclination alpha, high h and length of side a.
Fig. 4 is the arrangement mode schematic diagram that the positive triangular pyramid pattern of the substrate of embodiment 1 adopts.
Fig. 5 is the arrangement mode schematic diagram that the positive triangular pyramid pattern of the substrate of embodiment 2 adopts.
Fig. 6 is that total light of led chip leads to the changing trend diagram with the inclination alpha of positive triangular pyramid.
Fig. 7 is that the total light flux of led chip is with the changing trend diagram of the spacing d of positive triangular pyramid.
Fig. 8 is that the total light flux of led chip of the present invention is with the changing trend diagram of positive triangular pyramid length of side a.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Embodiment 1
Fig. 1 is the schematic diagram of the led chip of present embodiment, as shown in Figure 1, by the patterned sapphire substrate 11 that is arranged in order, N-type GaN layer 12, MQW quantum well layer 13, P type GaN layer 14 forms.
Shown in Fig. 2 ~ 3, the patterned substrate of the led chip of present embodiment, the pattern of substrate is comprised of the identical positive triangular pyramid 15 of a plurality of shapes that are arranged in substrate surface, and the inclination alpha of each positive triangular pyramid is 65 °; The spacing d of adjacent positive triangular pyramid is 1.4 times of length of side a of described positive triangular pyramid; Positive length of side a corresponding to triangular pyramid is 3 μ m in the present embodiment; The positive triangular pyramid that described a plurality of shape is identical adopts rectangular arranged mode as shown in Figure 4.
Embodiment 2
The patterned substrate of the led chip of present embodiment, the pattern of substrate is comprised of the identical positive triangular pyramid of a plurality of shapes that are arranged in substrate surface, and the inclination alpha of each positive triangular pyramid is 65 °; The spacing d of adjacent positive triangular pyramid equates with the length of side a of described positive triangular pyramid; Positive length of side a corresponding to triangular pyramid is 4 μ m in the present embodiment; The positive triangular pyramid that described a plurality of shape is identical adopts hexagonal arrangement mode as shown in Figure 5.
Embodiment 3
The patterned substrate of the led chip of present embodiment, the pattern of substrate is comprised of the identical positive triangular pyramid of a plurality of shapes that are arranged in substrate surface, and the inclination alpha of each positive triangular pyramid is 60 °; The spacing d of adjacent positive triangular pyramid is 1.2 times of length of side a of described positive triangular pyramid; Positive length of side a corresponding to triangular pyramid is 6 μ m in the present embodiment; The positive triangular pyramid that described a plurality of shape is identical adopts the hexagonal arrangement mode.
Test case:
Adopt optical analysis software TracePro that the patterned substrate of led chip of the present invention is done simulation test, the simulation test process is as follows:
(1) substrate makes up: the modeling function that adopts TracePro to carry is realized the making of substrate, and substrate dimension is 600 μ m * 250 μ m * 100 μ m, is rectangular-shaped.
(2) positive triangular pyramid design producing: the Plotting Function of employing Solidworks is realized the making of positive triangular pyramid pattern, and the inclination alpha of positive triangular pyramid is 60 ° ~ 65 °; The spacing d of adjacent positive triangular pyramid is 1 ~ 1.4 times of length of side a of described positive triangular pyramid, rectangular arranging.
(3) epitaxial loayer makes up: the modeling function that adopts TracePro to carry is realized the making of N-type GaN layer, MQW quantum well layer, P type GaN layer, N-type GaN layer is of a size of 600 μ m * 250 μ m * 4 μ m, the MQW quantum well layer is of a size of 600 μ m * 250 μ m * 50nm, P type GaN layer is of a size of 600 μ m * 250 μ m * 3 μ m, all is rectangular-shaped.
(4) target surface makes up: the modeling function that adopts TracePro to carry is realized the making of six layers of target surface, six layers of target surface place respectively upper and lower, the front, rear, left and right direction of led chip, upper and lower target surface is of a size of 600 μ m * 250 μ m * 3 μ m, forward and backward target surface (the relatively long limit of chip) is of a size of 600 μ m * 104.41 μ m * 3 μ m, and left and right target surface (the relatively minor face of chip) is of a size of 250 μ m * 104.41 μ m * 3 μ m.
(5) N-type GaN layer and graph substrate contact-making surface corresponding pattern make up: insert the patterned layer of Solidworks foundation on substrate layer, the difference of employing TracePro subtracts function and realizes that N-GaN layer corresponding pattern makes up.
(6) setting parameter of each material layer: the refractive index of Sapphire Substrate is 1.67, and N-type GaN, MQW quantum well, P type GaN material refractive index are 2.45, four all for the light of 450nm, and temperature setting is set to 300K, does not consider to absorb the impact with extinction coefficient.
(7) the quantum well layer surface source of light is set, and the quantum well layer upper and lower surface respectively arranges a surface source of light attribute, and the emission form is luminous flux, and the rink corner is distributed as the luminous field pattern of Lambertian, and luminous flux is 5000a.u., several 3000 of total light, several 10 of minimum light.
(8) ray tracing: utilize the subsidiary system that clears off of software, the led chip model of above-mentioned structure is carried out ray tracing, obtain respectively the luminous flux data of top, bottom, side.
Test result is shown in Fig. 6 ~ 8.
Fig. 6 is the logical inclination alpha changing trend diagram with positive triangular pyramid of total light of led chip (pattern length of side a is 3 μ m).Curve tendency shows among the figure: the total light flux of positive triangular pyramid pattern substrate LED slowly reduces after increasing first with the increase at inclination angle, occurs maximum when being 65 ° at the inclination angle.
Fig. 7 be the total light flux of led chip (positive the triangular pyramid length of side be 6 μ m, the inclination angle is 60 °) with the changing trend diagram of positive triangular pyramid spacing d, show the increase along with positive triangular pyramid pattern-pitch, the total light flux of positive triangular pyramid patterned substrate LED is on a declining curve.Data show that the maximum total light flux of the positive triangular pyramid substrate LED in radius is 6 ~ 7 mu m ranges is 7676a.u., and minimum total light flux is 7544a.u., and both gaps are less, and all are in higher level.Luminous flux is that choosing of actual pattern spacing brought flexibility with the tendency that spacing changes, and when spacing d is 1 ~ 1.4 times of described positive triangular pyramid length of side a, all can makes total light flux remain on higher level, and can effectively improve the light extraction efficiency of LED.
Fig. 8 be the total light flux of led chip of the present invention with the changing trend diagram of positive triangular pyramid length of side a, show the increase along with the positive triangular pyramid length of side, the total light flux of positive triangular pyramid graph substrate LED fluctuates at 7480a.u. substantially.Data show that the maximum total light flux of the positive triangular pyramid graph substrate LED in the length of side is 4 ~ 6 mu m ranges is 7492a.u., and minimum top light flux is 7469a.u., and both gaps are very little.LED compares with the pattern-free substrate, its total light flux promotes amplitude all about 4510a.u., explanation (is that positive triangular pyramid spacing is 1.2 times of the length of side behind setting parameter, the inclination angle is 60 °) the variation of the positive triangular pyramid length of side to align the impact that the total light flux of triangular pyramid graph substrate LED produces not obvious, the total light flux kept stable.This provides multi-selection for LED epitaxial loayer crystalline substance of heap of stone, can avoid the too large or too little of heap of stone brilliant defective that causes of Distances Between Neighboring Edge Points, further improves crystalloid amount of heap of stone, thereby improves the internal quantum efficiency of LED.
Above-described embodiment is the better execution mode of the present invention; but embodiments of the present invention are not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (4)
1. the patterned substrate through the led chip of pattern optimization is characterized in that, the pattern of substrate is comprised of the identical positive triangular pyramid of a plurality of shapes that are arranged in substrate surface, and the inclination alpha of positive triangular pyramid is 60 ° ~ 65 °; The spacing d of adjacent positive triangular pyramid is 1 ~ 1.4 times of length of side a of described positive triangular pyramid.
2. the patterned substrate of the led chip through pattern optimization according to claim 1 is characterized in that, the positive triangular pyramid that described a plurality of shapes are identical adopts the rectangular arranged mode.
3. the patterned substrate of the led chip through pattern optimization according to claim 1 is characterized in that, the positive triangular pyramid that described a plurality of shapes are identical adopts the hexagonal arrangement mode.
4. a led chip is characterized in that, comprises the patterned substrate such as each described led chip through pattern optimization of claim 1 ~ 3.
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| CN2012105461912A CN103022302A (en) | 2012-12-15 | 2012-12-15 | Patterned substrate of pattern improved LED chip and LED chip containing the same |
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| CN2012105461912A CN103022302A (en) | 2012-12-15 | 2012-12-15 | Patterned substrate of pattern improved LED chip and LED chip containing the same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015154551A1 (en) * | 2014-04-08 | 2015-10-15 | 厦门市三安光电科技有限公司 | High-brightness light-emitting diode having surface microstructure, and preparation and screening method therefor |
| WO2021249291A1 (en) * | 2020-06-11 | 2021-12-16 | 华灿光电(苏州）有限公司 | Light-emitting diode epitaxial wafer, growth method therefor, and light-emitting diode chip |
| CN116995175A (en) * | 2023-09-21 | 2023-11-03 | 南昌凯捷半导体科技有限公司 | Ag microprism reflecting structure same-side electrode LED and manufacturing method thereof |
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| US20070018186A1 (en) * | 2005-07-19 | 2007-01-25 | Lg Chem, Ltd. | Light emitting diode device having advanced light extraction efficiency and preparation method thereof |
| CN102682179A (en) * | 2012-05-28 | 2012-09-19 | 华南理工大学 | Method for designing light emitting diode (LED) chip model of graphical substrate |
| CN102694086A (en) * | 2012-05-28 | 2012-09-26 | 华南理工大学 | Patterned substrate of LED chip and LED chip |
| CN202996886U (en) * | 2012-12-15 | 2013-06-12 | 华南理工大学 | Pattern-optimized LED chip graphical substrate and LED chip |
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Patent Citations (4)
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| US20070018186A1 (en) * | 2005-07-19 | 2007-01-25 | Lg Chem, Ltd. | Light emitting diode device having advanced light extraction efficiency and preparation method thereof |
| CN102682179A (en) * | 2012-05-28 | 2012-09-19 | 华南理工大学 | Method for designing light emitting diode (LED) chip model of graphical substrate |
| CN102694086A (en) * | 2012-05-28 | 2012-09-26 | 华南理工大学 | Patterned substrate of LED chip and LED chip |
| CN202996886U (en) * | 2012-12-15 | 2013-06-12 | 华南理工大学 | Pattern-optimized LED chip graphical substrate and LED chip |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015154551A1 (en) * | 2014-04-08 | 2015-10-15 | 厦门市三安光电科技有限公司 | High-brightness light-emitting diode having surface microstructure, and preparation and screening method therefor |
| WO2021249291A1 (en) * | 2020-06-11 | 2021-12-16 | 华灿光电(苏州）有限公司 | Light-emitting diode epitaxial wafer, growth method therefor, and light-emitting diode chip |
| CN116995175A (en) * | 2023-09-21 | 2023-11-03 | 南昌凯捷半导体科技有限公司 | Ag microprism reflecting structure same-side electrode LED and manufacturing method thereof |
| CN116995175B (en) * | 2023-09-21 | 2024-02-06 | 南昌凯捷半导体科技有限公司 | Ag microprism reflecting structure same-side electrode LED and manufacturing method thereof |
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Application publication date: 20130403 |