CN202996888U - LED graph optimization substrate and LED chip - Google Patents
LED graph optimization substrate and LED chip Download PDFInfo
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- CN202996888U CN202996888U CN 201220695892 CN201220695892U CN202996888U CN 202996888 U CN202996888 U CN 202996888U CN 201220695892 CN201220695892 CN 201220695892 CN 201220695892 U CN201220695892 U CN 201220695892U CN 202996888 U CN202996888 U CN 202996888U
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Abstract
The utility model discloses an LED graph optimization substrate and an LED chip. The pattern of the substrate is composed of a plurality of identically-shaped cones distributed on the surface of the substrate, wherein the dip angle alpha of each cone is 55-65 degrees, and the edge distance d between every two adjacent cones is 0.4-0.6 mum. The utility model further discloses an LED chip containing the LED graph optimization substrate. Compared with the prior art, the LED chip containing the LED graph optimization substrate has higher light output efficiency than an LED chip with an ordinary substrate, the cone graph is one of the graphs most widely used in large-scale LED chip production in factories at present, a target pattern can be easily obtained in actual processing, and the LED graph optimization substrate and the LED chip are convenient in popularization and application.
Description
Technical field
The utility model relates to the LED chip substrate, particularly a kind of LED graphics-optimized substrate and LED chip.
Background technology
In order to improve internal quantum efficiency and the light extraction efficiency of GaN base LED, existing multinomial technology is used in the middle of LED research at present, as laterally overgrown technology, surface coarsening, nanometer embossing and metallic mirror surface reflector technology etc.And the patterned substrate technology that proposes in recent years can improve the light extraction efficiency of Sapphire Substrate GaN base LED effectively, becomes the focus of present Sapphire Substrate GaN base LED area research.As the key of patterned substrate technology, underlay pattern develops so far, and LED light extraction effect and epitaxial quality are improved significantly, has become the important channel of improving the LED performance.
Underlay pattern is presented as two aspects to the raising of LED optical property: on the one hand, pattern changes the track of light by scattering/reflection, light is diminished (less than the cirtical angle of total reflection) in the incidence angle of interface outgoing, thereby transmission and going out improves the recovery rate of light; On the other hand, pattern can also make follow-up GaN growth side direction brilliant effect of heap of stone occur, reduces crystal defect, improves internal quantum efficiency.For satisfying the requirement of device performance, the design of pattern is several kinds of renewals, and from initial flute profile to hexagon, taper, prismoid shaped etc., the effect of patterned substrate technology is approved.The pattern of substrate is the key of patterned substrate technology, and the light extraction efficiency of LED is played decisive role.As the direct factor that affects light path, the parameter of pattern will certainly affect (comprising the length of side, height and spacing etc.) performance of LED in the choice.The people such as S.Suihkonen experimental results show that: the hexagon-shaped pattern with larger height has not only strengthened reflection, the scattering process to light, and the graphical distribution of relative complex more is conducive to epitaxial lateral overgrowth, improves crystalloid amount of heap of stone.Cone shaped pattern with cone-shaped bulge-structure is also that so pattern height is generally 1 ~ 2 μ m, is spaced apart 2 ~ 3 μ m, and bottom width is 2 ~ 3 μ m, and there is larger impact at its oblique angle on the bright dipping of LED.The human nanometer embossings such as R.Hsueh prepare nano level underlay pattern on Sapphire Substrate, the light intensity of the LED chip that this substrate produces and light emission rate are all higher than common Sapphire Substrate LED, improved respectively 67% and 38%, also be better than micron order graph substrate LED.But be not that dimension of picture is less, the performance of LED is just better, and the relation between dimension of picture and LED performance still needs balance.Studies show that: along with reducing of pattern-pitch, be prone at GaN and sapphire interface the cavity that has little time to heal and produce due to the GaN growth, and cause the more dislocation of epitaxial loayer, even if light extraction efficiency promotes to some extent, but the increase of epitaxial loayer dislocation can reduce the LED chip life-span.In addition, the nano-scale patterns manufacturing cost is high, and industrialization is more difficult, has also greatly limited it and has applied.This shows, the optimization of dimension of picture and LED performance also needs further research.
Even if patterned substrate has increased substantially the light extraction efficiency of LED, but for the graph substrate take circular cone as basic pattern, do not have yet at present research can accurately point out its best pattern height, bottom surface radius, pattern density etc., the application of circular cone figure underlay pattern lacks the design objective of a cover system.In addition, on the optimization problem of pattern dimension, solve that size is dwindled and its balance between GaN growth quality is damaged, guarantee crystalloid amount better of heap of stone under the prerequisite that improves light extraction efficiency, accomplish raising LED aspect of performance truly, still require study.Therefore, the most optimized parameter of determining the graphical underlay pattern of circular cone needs to be resolved hurrily.
The utility model content
For the above-mentioned shortcoming and deficiency that overcome prior art, the purpose of this utility model is to provide a kind of LED graphics-optimized substrate, has advantages of that light emission rate is high.Another purpose of the present utility model is to provide the LED chip that comprises above-mentioned LED graphics-optimized substrate.
The purpose of this utility model is achieved through the following technical solutions:
A kind of LED graphics-optimized substrate, the pattern of substrate is comprised of the identical circular cone of a plurality of shapes that is arranged in substrate surface, and the inclination alpha of each circular cone is 55 ° ~ 65 °; The back gauge d of adjacent circular cone is 0.4 ~ 0.6 μ m.
The circular cone that described a plurality of shape is identical adopts the rectangular arranged mode.
The circular cone that described a plurality of shape is identical adopts the hexagonal arrangement mode.
A kind of LED chip comprises above-mentioned LED graphics-optimized substrate.
Compared with prior art, the utlity model has following advantage and beneficial effect:
(1) the utility model is by optimizing the pattern parameter of circular cone patterned substrate, greatly improved the ability at reflection photon arrival LED chip top, thereby make more light reflections to the chip top, strengthen the light extraction efficiency of patterned substrate GaN base LED, compare common pattern-free substrate LED, total light flux increases to 2.67 times, and the top light flux increases to 3.23 times, and the bottom light flux increases to 2.81 times.
(2) the utlity model has the light extraction efficiency more excellent than general substrate LED chip, the circular cone pattern is widely used figure during current chip is produced, and more is beneficial to and applies.
(3) pattern parameter that adopt to optimize of the utility model is avoided the too large or too little of heap of stone brilliant defective that causes of Distances Between Neighboring Edge Points, has further improved crystalloid amount of heap of stone, thereby has improved the internal quantum efficiency of LED.
Description of drawings
Fig. 1 is the schematic diagram of patterned substrate of the LED chip of embodiment 1.
Fig. 2 is the schematic diagram of patterned substrate of the LED chip of embodiment 1.
Fig. 3 is the monomer schematic diagram of the circular cone figure of embodiment 1 employing.
Fig. 4 is the arrangement mode schematic diagram that the circular cone pattern of the substrate of embodiment 1 adopts.
Fig. 5 is the arrangement mode schematic diagram that the circular cone pattern of the substrate of embodiment 2 adopts.
Fig. 6 is that total light of LED chip leads to the changing trend diagram with the inclination alpha of circular cone.
Fig. 7 is that the total light flux of LED chip is with the changing trend diagram of the back gauge d of circular cone.
Fig. 8 is that the total light flux of the utility model LED chip is with the changing trend diagram of circular cone bottom surface radius of circle R.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
Fig. 1 is the schematic diagram of the LED chip of the present embodiment, by the patterned sapphire substrate 11 that is arranged in order, N-type GaN layer 12, and MQW quantum well layer 13, P type GaN layer 14 forms.
As shown in Fig. 2 ~ 4, the patterned substrate of the LED chip of the present embodiment, the pattern of substrate is comprised of the identical circular cone 15 of a plurality of shapes that are arranged in substrate surface, and the inclination alpha of each circular cone is 60 °; The back gauge d of adjacent circular cone is 0.6 μ m; The bottom surface radius R that in the present embodiment, circular cone is corresponding is 3.4 μ m; The circular cone that described a plurality of shape is identical adopts rectangular arranged mode as shown in Figure 4.
Embodiment 2
The patterned substrate of the LED chip of the present embodiment, the pattern of substrate is comprised of the identical circular cone of a plurality of shapes that is arranged in substrate surface, and the inclination alpha of each circular cone is 65 °; The back gauge d of adjacent circular cone is 0.4 μ m; The bottom surface radius of circle R that in the present embodiment, circular cone is corresponding is 3.0 μ m; The circular cone that described a plurality of shape is identical adopts hexagonal arrangement mode as shown in Figure 5.
Test case:
Adopt optical analysis software TracePro to do simulation test to the patterned substrate of LED chip of the present utility model, the simulation test process is as follows:
(1) substrate builds: the modeling function that adopts TracePro to carry is realized the making of substrate, and substrate dimension is 600 μ m * 250 μ m * 100 μ m, is rectangular-shaped.
(2) circular cone design producing: the Plotting Function of employing Solidworks is realized the making of circular cone pattern: the inclination alpha of circular cone is 20 ° ~ 70 °; The back gauge d of adjacent circular cone is 0.4 ~ 1.0 μ m; The bottom surface radius of circle R of described circular cone is 1.4 ~ 3.4 μ m, rectangular arranging.
(3) epitaxial loayer builds: the modeling function that adopts TracePro to carry is realized the making of N-type GaN layer, MQW quantum well layer, P type GaN layer, N-type GaN layer is of a size of 600 μ m * 250 μ m * 4 μ m, the MQW quantum well layer is of a size of 600 μ m * 250 μ m * 50nm, P type GaN layer is of a size of 600 μ m * 250 μ m * 3 μ m, all is rectangular-shaped.
(4) target surface builds: the modeling function that adopts TracePro to carry is realized the making of six layers of target surface, six layers of target surface are placed in respectively upper and lower, the front, rear, left and right direction of LED chip, upper and lower target surface is of a size of 600 μ m * 250 μ m * 3 μ m, forward and backward target surface (the long limit of chip relatively) is of a size of 600 μ m * 104.41 μ m * 3 μ m, and left and right target surface (minor face of chip relatively) is of a size of 250 μ m * 104.41 μ m * 3 μ m.
(5) N-type GaN layer and graph substrate contact-making surface corresponding pattern build: insert the patterned layer of Solidworks foundation on substrate layer, the difference of employing TracePro subtracts function and realizes that N-GaN layer corresponding pattern builds.
(6) setting parameter of each material layer: the refractive index of Sapphire Substrate is 1.67, and N-type GaN, MQW quantum well, P type GaN material refractive index are 2.45, four all for the light of 450nm, and temperature setting is set to 300K, does not consider to absorb the impact with extinction coefficient.
(7) the quantum well layer surface source of light is set: the quantum well layer upper and lower surface respectively arranges a surface source of light attribute, the emission form is luminous flux, and the rink corner is distributed as the luminous field pattern of Lambertian, and luminous flux is 5000a.u., several 3000 of total light, several 10 of minimum light.
(8) ray tracing: utilize the software subsidiary system that clears off, the LED chip model of above-mentioned structure is carried out ray tracing, obtain respectively the luminous flux data of top, bottom, side.
Test result is as shown in Fig. 6 ~ 8.
Fig. 6 be LED chip (patterned underside radius of circle R is 1 μ m, and back gauge d is 2 μ m) total the logical inclination alpha changing trend diagram with circular cone of light.In figure, curve tendency shows: the total light flux of circular cone pattern substrate LED slowly reduces after first increasing at last with the increase at inclination angle, occurs maximum when being 60 ° at the inclination angle.
Fig. 7 be the total light flux of LED chip (circular cone bottom surface radius of circle R is 3.4 μ m, and the inclination angle is 60 °) with the changing trend diagram of circular cone spacing d, show that the total light flux of circular cone patterned substrate LED totally is increase tendency along with the reducing of circular cone pattern-pitch.The total light flux of pyramid type substrate LED chip is in higher level in back gauge is 0.4 ~ 0.6 μ m scope, be that 0.6 μ m place obtains maximum 7905a.u. in back gauge.
Fig. 8 be the total light flux of LED chip (cone side is 1 μ m apart from d, and the inclination angle is 60 °) with the changing trend diagram of circular cone bottom surface radius of circle R, show the increase along with circular cone patterned underside radius of circle, the total light flux of circular cone patterned substrate LED is increase tendency.Data show that the maximum total light flux of the pyramid type substrate LED in radius is 3.0 ~ 3.4 μ m scopes is 7755a.u..
Above-described embodiment is the better execution mode of the utility model; but execution mode of the present utility model is not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present utility model and principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, within being included in protection range of the present utility model.
Claims (4)
1. a LED graphics-optimized substrate, is characterized in that, the pattern of substrate is comprised of the identical circular cone of a plurality of shapes that is arranged in substrate surface, and the inclination alpha of each circular cone is 55 ° ~ 65 °; The back gauge d of adjacent circular cone is 0.4 ~ 0.6 μ m.
2. LED graphics-optimized substrate according to claim 1, is characterized in that, the circular cone that described a plurality of shapes are identical adopts the rectangular arranged mode.
3. LED graphics-optimized substrate according to claim 1, is characterized in that, the circular cone that described a plurality of shapes are identical adopts the hexagonal arrangement mode.
4. a LED chip, is characterized in that, comprises LED graphics-optimized substrate as described in claim 1 ~ 3 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220695892 CN202996888U (en) | 2012-12-15 | 2012-12-15 | LED graph optimization substrate and LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220695892 CN202996888U (en) | 2012-12-15 | 2012-12-15 | LED graph optimization substrate and LED chip |
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| CN202996888U true CN202996888U (en) | 2013-06-12 |
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| CN 201220695892 Expired - Lifetime CN202996888U (en) | 2012-12-15 | 2012-12-15 | LED graph optimization substrate and LED chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104078540A (en) * | 2014-06-23 | 2014-10-01 | 华南理工大学 | LED patterned substrate and LED chip |
| CN106067503A (en) * | 2015-04-23 | 2016-11-02 | 岭南大学校产学协力团 | The substrate of the patterning of gallium nitride based light emitting diode and use its light emitting diode |
-
2012
- 2012-12-15 CN CN 201220695892 patent/CN202996888U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104078540A (en) * | 2014-06-23 | 2014-10-01 | 华南理工大学 | LED patterned substrate and LED chip |
| CN106067503A (en) * | 2015-04-23 | 2016-11-02 | 岭南大学校产学协力团 | The substrate of the patterning of gallium nitride based light emitting diode and use its light emitting diode |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130612 |
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| CX01 | Expiry of patent term |