CN104409596B - The graphical LED substrate and LED chip of a kind of tower-like pattern - Google Patents

The graphical LED substrate and LED chip of a kind of tower-like pattern Download PDF

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Publication number
CN104409596B
CN104409596B CN201410712782.1A CN201410712782A CN104409596B CN 104409596 B CN104409596 B CN 104409596B CN 201410712782 A CN201410712782 A CN 201410712782A CN 104409596 B CN104409596 B CN 104409596B
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pattern
tower
round platform
indent
cylinder
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CN104409596A (en
Inventor
李国强
乔田
林志霆
王海燕
周仕忠
王凯诚
钟立义
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South China University of Technology SCUT
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South China University of Technology SCUT
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Abstract

The invention discloses a kind of graphical LED substrate of tower-like pattern, underlay pattern is made up of the multiple tower-like patterns of shape identical for being arranged in substrate surface；The tower-like pattern is the integrative-structure being made up of the m round platform with indent and a circular cone；The m round platform with indent is arranged in order from the bottom to top by descending order；The i-th columned indent is provided with the top of i-th round platform with indent；It is the i-th round platform to make the round platform corresponding to the i-th round platform with indent；It is the i-th cylinder to make the cylinder corresponding to the i-th columned indent；Then the upper bottom surface of the i-th round platform is the upper bottom surface of the i-th cylinder；The bottom surface of the i-th cylinder is the bottom surface of i+1 round platform；The bottom surface of m cylinders is the bottom surface of circular cone；The height h of the i-th cylinderi.>0.Invention increases refraction reflecting surface, light intensity and light extraction efficiency have different degrees of raising, are with a wide range of applications compared with the ordinary conical type patterned substrate of same size.

Description

The graphical LED substrate and LED chip of a kind of tower-like pattern
Technical field
The present invention relates to graphical LED substrate, the graphical LED substrate and LED chip of more particularly to a kind of tower-like pattern.
Background technology
At present, in order to improve the internal quantum efficiency and light extraction efficiency of GaN base LED, many new technologies are employed, including Laterally overgrown technology, surface coarsening, patterned substrate technology and metallic mirror surface reflecting layer technology etc..In recent years, how The light extraction efficiency of Sapphire Substrate GaN base LED is effectively improved using patterned substrate technology, has been increasingly becoming current blue precious The focus of the substrate GaN-based LED field research of stone.Used as the key of patterned substrate technology, underlay pattern is developed so far, to LED Light extraction effect and epitaxial quality improve notable, it has also become improve the important channel of LED performances.
Raising of the underlay pattern to LED light performance is presented as two aspects：On the one hand, pattern is changed by scattering/reflection The track of light, makes light diminish (less than the cirtical angle of total reflection) in the incidence angle of Air Interface outgoing, so as to transmit, improves light Recovery rate；On the other hand, pattern is also possible that the effect of lateral epitaxy occurs in follow-up GaN growth, reduces crystal defect, Improve internal quantum efficiency.To meet the requirement of device performance, several kinds of renewals of design of pattern, from initial flute profile to hexagonal Shape, taper, prismoid shaped etc., the application effect of patterned substrate technology have been approved.
The pattern of substrate is the key of patterned substrate technology, and the light extraction efficiency to LED plays decisive role.In this regard, Scientist and professional and technical personnel have had many kinds of researchs.The experiment of S.Suihkonen et al. is proved:With larger height Hexagon-shaped pattern not only increases reflection, the scattering process to light, and relative complex figure distribution is more beneficial for laterally Extension, improves epitaxy quality.Cone shaped pattern with cone-shaped bulge-structure be also in this way, pattern height is generally 1~2 μm, At intervals of 2~3 μm, bottom width is 2~3 μm, and there is large effect at its oblique angle to the light extraction of LED.R.Hsueh et al. nano impressions Technology prepares nano level underlay pattern on a sapphire substrate, and the light intensity and light emission rate of the LED chip that the substrate is produced are all Higher than common Sapphire Substrate LED, 67% and 38% is respectively increased, also superior to micron order graph substrate LED.However, according to Dimension of picture is not the smaller the better from the point of view of actually used situation, and the relation between dimension of picture and LED performances still needs balance. Research shows：With the reduction of pattern spacing, easily occur being produced because GaN growth has little time healing in GaN and sapphire interface Raw cavity, and the more dislocations of epitaxial layer are caused, even if light extraction efficiency has been lifted, but the increase of epitaxial layer dislocation can drop The low LED chip life-span.In addition, nano-scale patterns are more expensive to manufacture, industrialization is relatively difficult, and also greatly limit its popularization should With.
At present, patterned substrate pattern is only limitted to the arrangement of simple linear array or hexagonal arrangement of single pattern.Although this can So that light emission rate obtains a certain degree of raising, but the progress and people with science and technology being carried to the continuous of illumination tool demands Height, the need for they can not fully meet people.
The content of the invention
In order to overcome the disadvantages mentioned above and deficiency of prior art, it is an object of the invention to provide a kind of figure of tower-like pattern Shape LED substrate, increased refraction reflecting surface so that light intensity and light extraction efficiency are graphically served as a contrast with the ordinary conical type of same size Bottom is with a wide range of applications compared to there is different degrees of raising.
Another object of the present invention is to provide a kind of LED chip of the graphical LED substrate comprising above-mentioned tower-like pattern.
The purpose of the present invention is achieved through the following technical solutions：
A kind of graphical LED substrate of tower-like pattern, underlay pattern is by being arranged in multiple shape identicals of substrate surface Tower-like pattern composition；
The tower-like pattern is the integrative-structure being made up of the m round platform with indent and a circular cone；m≥1；
The m round platform with indent is arranged in order from the bottom to top by descending order；
Wherein, the i-th columned indent is provided with the top of the i-th round platform with indent；
It is the i-th round platform to make the round platform corresponding to the i-th round platform with indent；Make the cylinder corresponding to the i-th columned indent It is the i-th cylinder；
Then the upper bottom surface of the i-th round platform is the upper bottom surface of the i-th cylinder；The bottom surface of the i-th cylinder is under i+1 round platform Bottom surface；The bottom surface of m cylinders is the bottom surface of circular cone；1≤i≤m；
The height h of the i-th cylinderi.>0。
The height H of the tower-like pattern is 0.5~2 μm, and bottom surface radius R is 0.5~3 μm.
The multiple tower-like pattern of shape identical uses rectangular arrangement pattern.
The multiple tower-like pattern of shape identical uses diamond array mode.
The multiple tower-like pattern of shape identical uses circular arrangement mode.
The multiple tower-like pattern of shape identical uses hexagonal arrangement mode.
A kind of LED chip, including above-mentioned tower-like pattern graphical LED substrate.
Compared with prior art, the present invention has advantages below and beneficial effect：
The invention provides a kind of tower-like LED patterned substrates of new composite configuration, original common circle is breached The thinking limitation of tapered patterned substrate pattern, increased refraction reflecting surface so that light intensity and light extraction efficiency are greatly improved；With nothing The patterned substrate of pattern is compared, and top light is logical can to improve 2.70 times or so, and bottom light is logical can to improve 2.43 times or so, ambient light Logical to improve 2.65 times or so, total light flux can improve 2.60 times or so；With the simple pyramid type patterned substrate of same size Compare, top luminous flux can improve 1.17 times or so, and bottom luminous flux can improve 1.27 or so, be with a wide range of applications.
Brief description of the drawings
Fig. 1 is the schematic diagram of the LED chip of embodiments of the invention 1.
Fig. 2 is the schematic diagram of the tower-like pattern of embodiments of the invention 1.
Fig. 3 is the arrangement schematic diagram of the tower-like pattern of embodiments of the invention 1.
Fig. 4 is the arrangement schematic diagram of the tower-like pattern of embodiments of the invention 2.
Fig. 5 is the arrangement schematic diagram of the tower-like pattern of embodiments of the invention 3.
Fig. 6 is the arrangement schematic diagram of the tower-like pattern of embodiments of the invention 4.
Specific embodiment
With reference to embodiment, the present invention is described in further detail, but embodiments of the present invention not limited to this.
Embodiment 1
Fig. 1 is the schematic diagram of the LED chip of the present embodiment, by the graphical LED of the tower-like pattern of the sapphire being arranged in order Substrate 11, N-type GaN layer 12, MQW quantum well layers 13, p-type GaN layer 14 is constituted.
The graphical LED substrate of the tower-like pattern of the present embodiment, underlay pattern is by being arranged in multiple shapes of substrate surface The tower-like pattern composition of identical.As shown in Fig. 2 the tower-like pattern is to be made up of 2 round platforms with indent and a circular cone Integrative-structure；3 round platforms with indent are arranged in order from the bottom to top by descending order.Wherein, i-th with indent The i-th columned indent is provided with the top of round platform；I=1,2,3.It is the i-th circle to make the round platform corresponding to the i-th round platform with indent Platform；It is the i-th cylinder to make the cylinder corresponding to the i-th columned indent；Then the upper bottom surface of the i-th round platform is the upper bottom of the i-th cylinder Face；The bottom surface of the i-th cylinder is the bottom surface of i+1 round platform；The bottom surface of m cylinders is the bottom surface of circular cone.
In the present embodiment, the height H of tower-like pattern is 2 μm, and bottom radius of circle R is 3.0 μm.The height h of the 1st cylinder1It is 0.5 μm, the height h of the 2nd cylinder2It is 1 μm；The height h of the 3rd cylinder3It is 1.5 μm.
The tower-like pattern of this implementation uses hexagonal arrangement mode as shown in Figure 3, and the center space D of adjacent tower-like pattern is 8μm。
Embodiment 2
The present embodiment is in addition to following characteristics, and remaining feature is same with embodiment 1：
In the present embodiment, the height H of tower-like pattern is 2 μm, and bottom radius of circle R is 2.0 μm.The height h of the 1st cylinder1It is 0.4 μm, the height h of the 2nd cylinder2It is 0.8 μm；The height h of the 3rd cylinder3It is 1.5 μm.
The tower-like pattern of this implementation uses rectangular arrangement pattern as shown in Figure 4, and the center space D of adjacent tower-like pattern is 8μm。
Embodiment 3
The present embodiment is in addition to following characteristics, and remaining feature is same with embodiment 1：
In the present embodiment, the height H of tower-like pattern is 2 μm, and bottom radius of circle R is 1.5 μm.The height h of the 1st cylinder1It is 0.3 μm, the height h of the 2nd cylinder2It is 0.6 μm；The height h of the 3rd cylinder3It is 1.3 μm.
The tower-like pattern of this implementation uses diamond array mode as shown in Figure 5, and the center space D of adjacent tower-like pattern is 6μm。
Embodiment 4
The present embodiment is in addition to following characteristics, and remaining feature is same with embodiment 1：
In the present embodiment, the height H of tower-like pattern is 0.5 μm, and bottom radius of circle R is 0.5 μm.The height h of the 1st cylinder1For 0.1 μm, the height h of the 2nd cylinder2It is 0.1 μm；The height h of the 3rd cylinder3It is 0.1 μm.
The tower-like pattern of this implementation uses circular arrangement mode as shown in Figure 6, and the center space D of adjacent tower-like pattern is 2μm。
Test case：
Simulation test is done to the graphical LED substrate of tower-like pattern of the invention using optical analysis software TracePro, Simulation test process is as follows：
(1) substrate builds：The modeling function carried using TracePro realizes the making of substrate, and substrate dimension is 120 μm × 120 100 μm of μ ms, in rectangular-shape.
(2) tower-like pattern makes：The making of tower-like pattern is realized using the Plotting Function of Solidworks, each tower-like figure The height H of case is 2 μm, and bottom radius of circle R is 3.0 μm, h1It is 0.5, h2It is 1, h3It is 1.5, adjacent two centre of figures space D is 9 μ m。
(3) arrangement of pattern：Pattern is arranged according to the hexagonal mode of Fig. 2, center spacing is 9 μm.
(4) extension layer building：The modeling function carried using TracePro realizes N-type GaN layer, MQW quantum well layers, p-type The making of GaN layer, N-type GaN layer size is 4 μm of 120 μ m, 120 μ m, and MQW quantum well layers size is the μ m of 120 μ m 120 75nm, p-type GaN layer size is 0.2 μm of 120 μ m, 120 μ m, in rectangular-shape.
(5) target surface builds：The modeling function carried using TracePro realizes six layers of making of target surface, six layers of target surface difference Upper and lower, the front, rear, left and right direction of LED chip are placed in, upper and lower target surface size is 0.01 μm of 120 μ m, 120 μ m, forward and backward, Left and right target surface size is 0.01 μm of 100 μ m, 104.275 μ m.
(6) N-type GaN layer builds with graph substrate contact surface corresponding pattern：Insertion Solidworks set up patterned layer in On substrate layer, built using N-GaN layers of corresponding pattern of difference set functional realiey of TracePro.
(7) parameter setting of each material layer：The refractive index of Sapphire Substrate is 1.67, N-type GaN, MQW SQW, p-type GaN material refractive indexes are 2.45, and four for the light of 450nm, and temperature setting is 300K, does not consider to absorb and extinction coefficient Influence.
(8) quantum well layer surface source of light setting, it is characterised in that：Quantum well layer upper and lower surface respectively sets a surface source of light Attribute, transmitting form is luminous flux, and rink corner is distributed as the luminous field patterns of Lambertian, and luminous flux is 5000a.u., total light line number 3000, minimum light line number 10.
(9) ray tracing：Using software it is subsidiary clear off system, carrying out light to the LED chip model of above-mentioned structure chases after Track, obtains top, bottom, the luminous flux data of side respectively.
Test result is as follows：
In test case, top light leads to 1871.8a.u., and bottom light leads to 2139.9a.u., and ambient light leads to 3368.29a.u., always Light leads to 6460.54a.u..Compared with the patterned substrate of pattern-free, top light is logical to improve 2.70 times, and bottom light is logical to be improve 2.43 times, ambient light is logical to improve 2.65 times, and total light flux improves 2.60 times.Simple pyramid type with same size is graphical Substrate is compared, and top luminous flux improves 1.17 times, and bottom luminous flux improves 1.27 times.
Above-described embodiment is the present invention preferably implementation method, but embodiments of the present invention are not by the embodiment Limitation, it is other it is any without departing from Spirit Essence of the invention and the change, modification, replacement made under principle, combine, simplification, Equivalent substitute mode is should be, is included within protection scope of the present invention.

Claims (7)

1. a kind of graphical LED substrate of tower-like pattern, it is characterised in that underlay pattern is by being arranged in multiple shapes of substrate surface The tower-like pattern composition of shape identical；
The tower-like pattern is the integrative-structure being made up of the m round platform with indent and a circular cone；m≥1；
The m round platform with indent is arranged in order from the bottom to top by descending order；
Wherein, the i-th columned indent is provided with the top of the i-th round platform with indent；
It is the i-th round platform to make the round platform corresponding to the i-th round platform with indent；It is i-th to make the cylinder corresponding to the i-th columned indent Cylinder；
Then the upper bottom surface of the i-th round platform is the upper bottom surface of the i-th cylinder；The bottom surface of the i-th cylinder is the bottom of i+1 round platform Face；The bottom surface of m cylinders is the bottom surface of circular cone；1≤i≤m；
The height h of the i-th cylinderi.>0。
2. the graphical LED substrate of tower-like pattern according to claim 1, it is characterised in that the height of the tower-like pattern Degree H is 0.5~2 μm, and bottom surface radius R is 0.5~3 μm.
3. the graphical LED substrate of tower-like pattern according to claim 1, it is characterised in that the multiple shape is identical Tower-like pattern use rectangular arrangement pattern.
4. the graphical LED substrate of tower-like pattern according to claim 1, it is characterised in that the multiple shape is identical Tower-like pattern use diamond array mode.
5. the graphical LED substrate of tower-like pattern according to claim 1, it is characterised in that the multiple shape is identical Tower-like pattern use circular arrangement mode.
6. the graphical LED substrate of tower-like pattern according to claim 1, it is characterised in that the multiple shape is identical Tower-like pattern use hexagonal arrangement mode.
7. a kind of LED chip, it is characterised in that including the graphical of the tower-like pattern as described in any one of claim 1~6 LED substrate.
CN201410712782.1A 2014-11-28 2014-11-28 The graphical LED substrate and LED chip of a kind of tower-like pattern Active CN104409596B (en)

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CN115020565B (en) * 2022-06-06 2023-10-20 淮安澳洋顺昌光电技术有限公司 Preparation method of composite patterned substrate and epitaxial structure with air gap
CN115148874B (en) * 2022-09-02 2022-11-18 元旭半导体科技股份有限公司 Preparation method of patterned substrate structure

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CN102769082A (en) * 2012-07-02 2012-11-07 杭州士兰明芯科技有限公司 Patterned substrate, formation method of patterned substrate and mask for producing patterned substrate
CN103197502A (en) * 2013-03-04 2013-07-10 西安神光安瑞光电科技有限公司 Concentric circle mask, graphical substrate and manufacture method
CN204204897U (en) * 2014-11-28 2015-03-11 华南理工大学 A kind of graphical LED substrate of tower-like pattern and LED chip

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TWI429030B (en) * 2011-05-16 2014-03-01 Sino American Silicon Prod Inc Led substrate and led

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
CN102769082A (en) * 2012-07-02 2012-11-07 杭州士兰明芯科技有限公司 Patterned substrate, formation method of patterned substrate and mask for producing patterned substrate
CN103197502A (en) * 2013-03-04 2013-07-10 西安神光安瑞光电科技有限公司 Concentric circle mask, graphical substrate and manufacture method
CN204204897U (en) * 2014-11-28 2015-03-11 华南理工大学 A kind of graphical LED substrate of tower-like pattern and LED chip

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