CN103489992B - Patterned substrate and LED chip used for LED forwardly-installed structure - Google Patents
Patterned substrate and LED chip used for LED forwardly-installed structure Download PDFInfo
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- CN103489992B CN103489992B CN201310459424.XA CN201310459424A CN103489992B CN 103489992 B CN103489992 B CN 103489992B CN 201310459424 A CN201310459424 A CN 201310459424A CN 103489992 B CN103489992 B CN 103489992B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
The invention discloses a patterned substrate used for an LED forwardly-installed structure. The pattern of the substrate is formed by a plurality of dome-type pattern bodies which are same in shape and are arranged on the surface of the substrate; the dome-type pattern bodies are axisymmetric cones, the bottom surface of each cone is a circle with the radius of 0.8-1.2 microns, and the height of each cone is 1.3-1.6 microns; the section, along the symmetric axis, of each cone is nearly a triangle which is formed by two symmetrical circular arcs and one linear segment; the corresponding central angle of each circular arc is 5-15 degrees. The invention further discloses the LED chip including the patterned substrate. Compared with the prior art, light-emitting efficiency is better, the external quantum efficiency of the LED chip is improved, screw dislocation is effectively restrained from being produced, the quality of epitaxial wafers is further improved, and therefore the internal quantum efficiency of an LED is enhanced.
Description
Technical field
The present invention relates to led chip, particularly to a kind of patterned substrate for the positive assembling structure of led and led chip.
Background technology
Led as a kind of New Solid lighting source, with its caloric value low, power consumption is few, response speed is fast, life-span length,
The advantages of small volume, is it is considered to be the green illumination light source of 21 century.Face the future the market demand of high-power illumination, led's
Luminous efficiency has much room for improvement.The light extraction efficiency of led depends on internal quantum efficiency and external quantum efficiency.On the one hand, due to gan and indigo plant
There is larger difference in the lattice paprmeter of gem substrate and thermal coefficient of expansion, creating density in the crystal of gan thin film is 109-
1012cm-2Pass through dislocation, this creates detrimental effect to the internal quantum efficiency of gan base led.However, with the life of gan extension
The continuing to optimize of long technology, the epitaxy quality of gan increases, and the internal quantum efficiency of current led has reached more than 90%.Another
Aspect, gan has higher coefficient of refraction (n=2.45), the critical angle [θ of beam projectingc=sin-1(nair/ngan)] be only
24.6 °, lead to exist serious total reflection phenomenon between led chip and air, external quantum efficiency is difficult to improve.Ask for this
Topic, patterned substrate technology can not only change light by pattern inclined plane and inject direction, make light in the angle of incidence of interface outgoing
Diminish (less than the cirtical angle of total reflection), more light energy transmissions and go out, so that external quantum efficiency is improved；Gan can also be made
Producing horizontal epitaxy effect in epitaxial growth, thus reducing defect concentrations in crystals, improving the internal quantum efficiency of led.For meeting
The requirement of device performance, several kinds of renewals of design of graph substrate, from initial flute profile to hexagon, taper, prismoid shaped etc., scheme
The application effect of shape substrate technology is approved.
The pattern of substrate is the key of patterned substrate technology, and underlay pattern develops so far, to led light extraction effect with outward
Prolong quality and improve significantly, it has also become improve the important channel of led performance, decisive role is played to the light extraction efficiency of led.As
The direct factor of impact light path, the parameter of pattern will certainly affect (including the length of side, height and spacing etc.) property of led in the choice
Energy.J.h.cheng et al. etches the cone shaped pattern with different inclination angle on a sapphire substrate using wet etching technique,
Find that the inclination angle of cone shaped pattern produces considerable influence to the epitaxy quality of gan, defect concentration, internal quantum efficiency etc..In order to subtract
Few dislocation is it should take less side inclination angle, but small inclination can weaken figure to the reflection of light or scattering effect, therefore
Need to seek an equilibrium point.D.s.wuu et al. prepares the length of side on a sapphire substrate using wet etching technique and is 3 μm, deep
Spend the triangular pyramid figure for 1.5 μm, gan is grown using mocvd method and makes chip, it is carried out with optic test, find figure
The external quantum efficiency of Sapphire Substrate gan base led is different because of the change of pattern density, the output of patterned substrate led
The output lifting 25% of the common led of power ratio.In addition, r.hsueh et al. is made on a sapphire substrate with nanometer embossing
Standby nano level underlay pattern, the light intensity of led chip that this substrate produces and light emission rate are higher than all common Sapphire Substrate
Led, has been respectively increased 67% and 38%, also superior to micron order graph substrate led.But not dimension of picture is less, the performance of led is just
Better, the relation between dimension of picture and led performance still needs balance.Research shows: with the reduction of pattern-pitch, in gan
With sapphire interface, the cavity of generation because gan growth has little time to heal easily occurs, and cause the more dislocation of epitaxial layer, that is,
Just light extraction efficiency has been lifted, but the increase of epitaxial layer dislocation can reduce its internal quantum efficiency and led chip life-span.In addition,
Nano-scale patterns manufacturing cost is high, and industrialization is relatively difficult, also greatly limit its popularization and application.As can be seen here, dimension of picture
Optimization with led performance also needs to study further.
Content of the invention
In order to overcome disadvantages mentioned above and the deficiency of prior art, it is an object of the invention to provide a kind of be used for led formal dress
The patterned substrate of structure, has more excellent light extraction efficiency, improves the external quantum efficiency of led chip, effectively suppresses spiral shell type
The generation of dislocation, further improves epitaxy quality, thus improve the internal quantum efficiency of led.
The purpose of the present invention is achieved through the following technical solutions:
A kind of patterned substrate for the positive assembling structure of led, the pattern of substrate is by the multiple shapes being arranged in substrate surface
Identical dome-shaped pattern forms.
Described dome-shaped pattern is axisymmetric vertebral body, the circle that the bottom surface of vertebral body is 0.8～1.2 μm for radius, vertebral body
A height of 1.3～1.6 μm；Vertebral body is the class triangle that the circular arc symmetrical by two sections and one section of straightway form along the section of axis of symmetry
Shape；The corresponding central angle of described circular arc is 5 °～15 °.
The spacing of adjacent vertebral bodies is 2.0～4.0 μm.
A kind of led chip, including the above-mentioned patterned substrate for the positive assembling structure of led.
The present invention, on the basis of pyramid type patterned substrate, is optimized to underlay pattern, and bus is changed into curve, obtains
To dome-shaped pattern；Due to being changed into after curve bus, light also can phase with reflection path in the order of reflection of led chip internal
Should change, thus producing different impacts to led light extraction efficiency, and, the change of tapered side radian can increase etched substrate
The difficulty of technique, the degree of accuracy of etching technics can have a huge impact to underlay pattern quality and optical property.Therefore, it can
The parameter of dome-shaped pattern is further optimized, in the optimization problem of pattern dimension, need change in size and its
Balance between gan growth quality is damaged, ensures more preferable epitaxy quality on the premise of improving light extraction efficiency.
Compared with prior art, the present invention has advantages below and a beneficial effect:
(1) present invention passes through using dome-shaped pattern, and by optimizing pattern parameter, substantially increases reflection photon and reach
The ability at led chip top, makes more light reflex to chip top, and bottom and side luminous flux also increased simultaneously, figure
The external quantum efficiency of shape Sapphire Substrate gan base led has been lifted.Compare common pattern-free substrate led, total light flux increases
Greatly to 2.49 times, top luminous flux increases to 3.0 times, and bottom luminous flux increases to 2.5 times.
(2) present invention has the light extraction efficiency more excellent than general substrate led chip, and dome-shaped pattern is tapered, with
Commercial patterned substrate pattern is consistent at present, can adopt original substrate etching technology, saves development cost.
(3) present invention optimizes on the basis of pyramid type graph substrate, changes shape and the parameter of pattern, it is to avoid between edge
Away from the too big or too little epitaxy defect causing, effectively suppress the generation of screw dislocation, further improve epitaxy quality, thus
Improve the internal quantum efficiency of led.
Brief description
Fig. 1 is the schematic diagram of the led chip of embodiments of the invention.
Fig. 2 is the schematic cross-section of the led patterned substrate of embodiments of the invention.
Fig. 3 is the top view of the led patterned substrate of embodiments of the invention.
Fig. 4 is the schematic cross-section of the dome-shaped pattern of embodiments of the invention along axis of symmetry.
Fig. 5 is the led(t-led of dome-shaped (d-led) and pyramid type patterned substrate) xrd in chip (0002) face tests
Figure.
Fig. 6 is the led(t-led of dome-shaped (d-led) and pyramid type patterned substrate) xrd in chip (10-12) face tests
Figure.
Fig. 7 dome-shaped (d-led) and the led(t-led of pyramid type patterned substrate) chip pl spectrogram.
Fig. 8 is that led chip each face luminous flux of embodiments of the invention becomes with the change that the corresponding central angle alpha of circular arc changes
Gesture figure.
Fig. 9 is the variation tendency that changes with the corresponding central angle alpha of circular arc of led chip total light flux of embodiments of the invention
Figure.
Specific embodiment
With reference to embodiment, the present invention is described in further detail, but embodiments of the present invention not limited to this.
Embodiment 1
Fig. 1 is the schematic diagram of the led chip of the present embodiment, by the patterned sapphire substrate 11 being arranged in order, N-shaped gan
Layer 12, mqw quantum well layer 13, p-type gan layer 14 forms.
As shown in Fig. 2 the present embodiment is used for the patterned sapphire substrate 11 of the positive assembling structure of led, the pattern of substrate is by arranging
The multiple shape identical dome-shaped patterns 15 being listed in substrate surface form.
As shown in figs. 34, described dome-shaped pattern is axisymmetric vertebral body, and the bottom surface of vertebral body is 1.2 μm for radius r
Circle, the high h of vertebral body is 1.5 μm.As shown in figure 4, vertebral body is that the circular arc symmetrical by two sections and one section are straight along the section of axis of symmetry
The class triangle of line segment composition, in figure o point is the center of circle of the corresponding circle of circular arc ab, and the corresponding central angle alpha of circular arc ab is 10 °；As
Shown in Fig. 3, spacing d of adjacent vertebral bodies is 3.0 μm.
Fig. 5～6 are the led chip of the present embodiment is circular cone (bottom surface radius is 1.2 μm, a height of 1.5 μm) with underlay pattern
Led chip xrd test result comparison diagram.With the led contrast of the dome-shaped graph substrate of the present embodiment, pyramid type figure lining
(0002) of the led at bottom has broader diffraction maximum, shows that related to screw dislocation defect in pyramid type graph substrate led is close
Degree is bigger.Dome-shaped patterned substrate led and pyramid type patterned substrate led(10-12) half-peak breadth close, show dome-shaped, circle
In the led of tapered patterned substrate, the defect concentration related to edge dislocation is close, the impact to two kinds of led chips for the edge dislocation
Basically identical.
Fig. 7 is the led chip of the present embodiment is circular cone (bottom surface radius is 1.2 μm, a height of 1.5 μm) with underlay pattern
The pl spectrum comparison diagram of led chip.The led of dome-shaped patterned substrate has similar lighting to the led of pyramid type patterned substrate
Peak type, and the led of dome-shaped patterned substrate has higher pl luminosity, both peak values are close.
Embodiment 2
, in addition to following characteristics, remaining feature is same with embodiment 1 for the present embodiment:
Dome-shaped pattern is axisymmetric vertebral body, the circle that the bottom surface of vertebral body is 0.8 μm for radius, a height of 1.3 μ of vertebral body
m.Vertebral body is the class triangle that the circular arc symmetrical by two sections and one section of straightway form along the section of axis of symmetry；Described circular arc corresponds to
Central angle be 5 °；The spacing of adjacent vertebral bodies is 2.0 μm.
The test result of the present embodiment is close with embodiment 1.
Embodiment 3
, in addition to following characteristics, remaining feature is same with embodiment 1 for the present embodiment:
Dome-shaped pattern is axisymmetric vertebral body, the circle that the bottom surface of vertebral body is 1.2 μm for radius, a height of 1.6 μ of vertebral body
m.Vertebral body is the class triangle that the circular arc symmetrical by two sections and one section of straightway form along the section of axis of symmetry；Described circular arc corresponds to
Central angle be 15 °；The spacing of adjacent vertebral bodies is 4.0 μm.
The test result of the present embodiment is close with embodiment 1.
Simulation test example
Patterned substrate using the led chip to the present invention for the optical analysis software tracepro does simulation test, simulation
Test process is as follows:
(1) substrate builds: realizes the making of substrate using the modeling function that tracepro carries, substrate dimension is 600 μm
× 250 100 μm of μ m, in rectangular-shaped.
(2) dome-shaped pattern makes: realizes the making of dome-shaped pattern: dome-shaped using the Plotting Function of solidworks
Pattern is axisymmetric vertebral body, the circle that the bottom surface of vertebral body is 0.8～1.2 μm for radius, a height of 1.3～1.6 μm of vertebral body；Vertebra
Body is the class triangle that the circular arc symmetrical by two sections and one section of straightway form along the section of axis of symmetry；The corresponding central angle of circular arc
For 0 °～90 °.
(3) extension layer building: N-shaped gan layer, mqw quantum well layer, p-type are realized using the modeling function that tracepro carries
The making of gan layer, 4 μm of N-shaped gan layer a size of 600 μ m 250 μ m, mqw quantum well layer a size of 600 μ m 250 μ m
50nm, 3 μm of p-type gan layer a size of 600 μ m 250 μ m, all in rectangular-shaped.
(4) target surface builds: realizes the making of six layers of target surface using the modeling function that tracepro carries, six layers of target surface are respectively
It is placed in upper and lower, the front, rear, left and right direction of led chip, 3 μm of upper and lower target surface a size of 600 μ m 250 μ m, forward and backward target surface
3 μm of (the long side of opposite chip) a size of 600 μ m 104.41 μ m, left and right target surface (minor face of opposite chip) a size of 250
μm×104.41μm×3μm.
(5) N-shaped gan layer and graph substrate contact surface corresponding pattern build: the patterned layer that insertion solidworks sets up in
On substrate layer, the subtractive functional realiey n-gan layer corresponding pattern using tracepro builds.
(6) parameter setting of each material layer: the refractive index of Sapphire Substrate is 1.67, N-shaped gan, mqw SQW, p-type
Gan material refractive index is 2.45, four light all for 450nm, and temperature setting is 300k, does not consider to absorb and extinction coefficient
Impact.
(7) quantum well layer surface source of light sets: quantum well layer upper and lower surface respectively arranges a surface source of light attribute, launches shape
Formula is luminous flux, and rink corner is distributed as lambertian and lights field pattern, and luminous flux is 5000a.u., and total light line number 3000 is minimum
Light line number 10.
(8) ray tracing: using software subsidiary clear off system, light is carried out to the led chip model of above-mentioned structure and chases after
Track, obtains top, bottom, the luminous flux data of side respectively.
Fig. 8 is that (underlay pattern bottom surface radius is 1.0 μm to led chip, a height of 1.5 μm, and spacing d of adjacent patterns is 3.0 μ
M) trendgram that each face luminous flux changes with the corresponding central angle alpha of circular arc.The top of led chip, bottom luminous flux are with circular arc
The trend of corresponding central angle alpha change is identical.In the range of 0～10 °, led top, bottom luminous flux with central angle increase and
Assume slight growth trend, changing value is only 100a.u. and 61a.u. respectively.Both of which obtains when central angle is 10 °
Big value, respectively 2191a.u. and 2473a.u..And work as central angle be more than 10 ° after, with the increase of central angle, led top, bottom
Portion's luminous flux persistently reduces, but bottom light flux variations ratio is shallower, and the range of decrease of top luminous flux is larger, reaches 367a.u., says
The impact to top emergent ray for the change of bright central angle is larger.With the increase of central angle, side light flux variations trend with
Top, bottom luminous flux are contrary: in the range of 0～10 °, led chip sides luminous flux assumes downward trend, and the range of decrease is
179a.u.；When central angle is more than 10 °, increase with central angle, side light flux variations are gentle, totally show a rising trend, amplification
It is only 134a.u..
Fig. 9 is that (underlay pattern bottom surface radius is 1.0 μm to led chip, a height of 1.5 μm, and spacing d of adjacent patterns is 3.0 μ
M) trendgram that total light flux changes with the corresponding central angle alpha of circular arc.With the increase of α, total light flux variation tendency and top
Portion's luminous flux is similar, assumes downward trend.When α is 0～40 °, the change of total light flux is more gentle, and changing value is
91.3a.u.；After central angle is more than 40 °, increase with central angle, total light flux strongly reduces, changing value is 405.8a.u..
When central angle is 0 °, and that is, pattern is pyramid type, the total light flux of led chip reaches maximum 7448a.u..
Test result to sum up, the corresponding central angle of preferred circular arc is 5 °～15 °.
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention are not subject to described embodiment
Limit, other any spirit without departing from the present invention and the change made under principle, modification, replacement, combine, simplify,
All should be equivalent substitute mode, be included within protection scope of the present invention.
Claims (3)
1. a kind of patterned substrate for the positive assembling structure of led is it is characterised in that the pattern of substrate is by being arranged in substrate surface
Multiple shape identical dome-shaped pattern compositions；Described dome-shaped pattern is axisymmetric vertebral body, and the bottom surface of vertebral body for radius is
0.8～1.2 μm of circle, a height of 1.3～1.6 μm of vertebral body；Vertebral body along axis of symmetry section be the circular arc symmetrical by two sections and
The class triangle of one section of straightway composition；The corresponding central angle of described circular arc is 5 °～15 °.
2. the patterned substrate for the positive assembling structure of led according to claim 1 is it is characterised in that between adjacent vertebral bodies
Away from for 2.0～4.0 μm.
3. a kind of led chip is it is characterised in that include the figure for the positive assembling structure of led described in any one of claim 1～2
Shape substrate.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515624A (en) * | 2009-03-31 | 2009-08-26 | 上海蓝光科技有限公司 | Method for manufacturing LED chips |
| CN102769082A (en) * | 2012-07-02 | 2012-11-07 | 杭州士兰明芯科技有限公司 | Patterned substrate, formation method of patterned substrate and mask for producing patterned substrate |
| CN203589068U (en) * | 2013-09-29 | 2014-05-07 | 华南理工大学 | Patterned substrate and LED chip used for LED forwardly-installed structure |
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| JP4776955B2 (en) * | 2005-03-17 | 2011-09-21 | キヤノン株式会社 | Light emitting device and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515624A (en) * | 2009-03-31 | 2009-08-26 | 上海蓝光科技有限公司 | Method for manufacturing LED chips |
| CN102769082A (en) * | 2012-07-02 | 2012-11-07 | 杭州士兰明芯科技有限公司 | Patterned substrate, formation method of patterned substrate and mask for producing patterned substrate |
| CN203589068U (en) * | 2013-09-29 | 2014-05-07 | 华南理工大学 | Patterned substrate and LED chip used for LED forwardly-installed structure |
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