CN103050598A - Hybrid unequal space patterned substrate and manufacturing method thereof - Google Patents
Hybrid unequal space patterned substrate and manufacturing method thereof Download PDFInfo
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- CN103050598A CN103050598A CN2012105488192A CN201210548819A CN103050598A CN 103050598 A CN103050598 A CN 103050598A CN 2012105488192 A CN2012105488192 A CN 2012105488192A CN 201210548819 A CN201210548819 A CN 201210548819A CN 103050598 A CN103050598 A CN 103050598A
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Abstract
The invention relates to a hybrid unequal space patterned substrate comprising a basic substrate. The hybrid unequal space patterned substrate is characterized in that bulge cycles arranged in an array form are formed by etching on the positive surface of the basic substrate, and each bulge cycle comprises at least two bulges with different sizes and shapes. The bulges are in semispherical, semi-elliptic, conical or pyramidal. The diameters of the bulges are 0.1-100 microns. The distances among the bulges of the same bulge cycle are not equal. The basic substrate is a sapphire substrate or a silicon carbide substrate. According to the invention, the surface of the substrate is provided with a plurality of non-equidistant arranged and different-size bulges so that an included angle of light extending out of an out-light surface after being reflected is changed to a larger extent, the generation of full reflection is furthest reduced, and the integral lighting efficiency of the hybrid unequal space patterned substrate disclosed by the invention is improved by 3-10% compared with the integral lighting efficiency of the patterned substrate in the prior art.
Description
Technical field
The present invention relates to a kind of patterned substrate, especially a kind of mixed type unequal-interval patterned substrate and preparation method thereof.
Background technology
Using patterned substrate to substitute the conventional planar substrate, is present more common a kind of method that promotes the led chip external quantum efficiency.
As shown in Figure 1, because of the material of epitaxial loayer 2a and the material of the substrate 1a under the epitaxial loayer 2a, the epoxide resin material of epitaxial loayer 2a upper (exiting surface) or the optical refractive index of air are different, therefore when the PN junction of epitaxial loayer 2a is luminous, its light that sends some light when the contact-making surface (exiting surface) of arrival and epoxy resin or air can cause too greatly total reflection occurring at this directive epitaxial loayer 2a lower surface at this interface because of incident angle, epitaxial loayer 2a lower surface can be reflected back upper surface with original angle again with light again, reflection repeatedly cause light in epitaxial loayer repeatedly motion reduced light quantum and namely reduced external quantum efficiency from the ratio that epitaxial loayer penetrates.The principle that patterned substrate promotes external quantum efficiency is, with the interface of epitaxial loayer and the substrate reflecting surface as an optics, the interface on script plane is made as the configuration of surface with regular projection, the light of light exit direction after its reflection of arrival epitaxial loayer lower surface generation reflex time and the angle angle of upper surface are changed, reduce total reflection, minimizing light order of reflection and then the minimizing light own loss texts in epitaxial loayer thereby reach.Its final goal is to reduce the loss that light moves in epitaxial loayer, promotes the probability that light penetrates epitaxial loayer, promotes the external quantum efficiency of led chip, finally promotes the luminous efficiency of led chip.Such as Fig. 2, shown in Figure 3, a kind of patterned substrate is arranged in the prior art, to form some protruding 4a with array format on the surface of basic substrate 3a, equal evenly distributed of big or small identical, the spacing of projection 4a, although the patterned substrate of this structure can be avoided the generation of total reflection to a certain extent, effect is not clearly.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of mixed type unequal-interval patterned substrate and preparation method thereof is provided, can change to a greater degree the angle of light extension exiting surface after reflection, reduce to greatest extent the generation of total reflection.
According to technical scheme provided by the invention, described mixed type unequal-interval patterned substrate, comprise basic substrate, it is characterized in that: form protruding cycle with array format in the positive etching of described basic substrate, described each projection cycle comprises the projection that at least two sizes, shape differ.
Being shaped as of described projection is hemispherical, semielliptical shape, coniform or pyramidal.
The diameter of described projection is 0.1 ~ 100 μ m.
Distance between the projection in the same projection cycle is not equidistant.
Described basic substrate adopts Sapphire Substrate or silicon carbide substrates.
The height of described projection is 0.1 ~ 100 μ m.
Distance between the adjacent protrusion is 0.1 ~ 100 μ m.
The preparation method of mixed type unequal-interval patterned substrate of the present invention is characterized in that, adopts following processing step:
(1) make photolithography plate, in some groups of light tight zones of photolithography plate design, every group of light tight zone is comprised of a plurality of light tight circle not of uniform size, and the distance between the light tight circle is not equidistant, and the remainder of photolithography plate is the light transmission part; The diameter of light tight circle is 0.1 ~ 100 μ m;
(2) to resist coating on the planar substrate of sapphire material or silicon carbide material, the gluing thickness of photoresist is 0.5～4 μ m, the photolithography plate that uses step (1) to obtain carries out exposure imaging, expose the zone that needs photoetching in planar substrate behind the exposure imaging, the light tight zone consistent with photolithography plate is covered by photoresist;
(3) planar substrate that step (2) is obtained is carried out the ICP etching, obtains patterned substrate.
The present invention adopts some projections not of uniform size of equidistantly not arranging on the surface of substrate, change to a greater degree the angle of light extension exiting surface after reflection, reduce to greatest extent the generation of total reflection, the patterned substrate of the comparable prior art of whole lighting efficiency promotes 3% ~ 10%.
Description of drawings
Fig. 1 is the schematic diagram that full emission occurs the conventional planar substrate.
Fig. 2 is the generalized section of patterned substrate in the prior art.
Fig. 3 is the vertical view of patterned substrate in the prior art.
Fig. 4 is the generalized section of a kind of embodiment of patterned substrate of the present invention.
Fig. 5 is the vertical view of Fig. 4.
Fig. 6 is the generalized section of the another kind of embodiment of patterned substrate of the present invention.
Fig. 7 is the vertical view of Fig. 6.
Embodiment
The invention will be further described below in conjunction with concrete accompanying drawing.
As shown in Figure 4 to 7: patterned substrate of the present invention comprises basic substrate 1, and basic substrate 1 adopts Sapphire Substrate, silicon carbide substrates or other substrates; Form protruding cycle 2 with array format in the positive etching of described basic substrate 1; Described each projection cycle 2 comprises the protruding 2b that at least two sizes, shape differ, and being shaped as of protruding 2b is hemispherical, semielliptical shape, coniform or pyramidal, and the diameter of protruding 2b is 0.1 ~ 100 μ m;
Such as Fig. 4, shown in Figure 5, the distance between the protruding 2b in the same projection cycle 2 is not equidistant;
The height of described protruding 2b is 0.1 ~ 100 μ m; Distance between the adjacent protrusion 2b is 0.1 ~ 100 μ m.
The present invention adopts some projections not of uniform size of equidistantly not arranging on the surface of substrate, change to a greater degree the angle of light extension exiting surface after reflection, reduce to greatest extent the generation of total reflection, the patterned substrate of the comparable prior art of whole lighting efficiency promotes 3% ~ 10%.
The preparation method of described patterned substrate comprises following processing step:
(1) make photolithography plate, in some groups of light tight zones of photolithography plate design, every group of light tight zone is comprised of a plurality of light tight circle not of uniform size, and the distance between the light tight circle is not equidistant, and the remainder of photolithography plate is the light transmission part; The diameter of light tight circle is 0.1 ~ 100 μ m;
(2) to resist coating on the planar substrate of sapphire material or silicon carbide material, the gluing thickness of photoresist is 0.5～4 μ m, the photolithography plate that uses step (1) to obtain carries out exposure imaging, expose the zone that needs photoetching in planar substrate behind the exposure imaging, the light tight zone consistent with photolithography plate is covered by photoresist;
(3) planar substrate that step (2) is obtained is carried out the ICP etching, obtains patterned substrate.
Claims (8)
1. mixed type unequal-interval patterned substrate, comprise basic substrate (1), it is characterized in that: form protruding cycle (2) with array format in the positive etching of described basic substrate (1), described each projection cycle (2) comprises the projection (2b) that at least two sizes, shape differ.
2. mixed type unequal-interval patterned substrate as claimed in claim 1, it is characterized in that: being shaped as of described projection (2b) is hemispherical, semielliptical shape, coniform or pyramidal.
3. mixed type unequal-interval patterned substrate as claimed in claim 1, it is characterized in that: the diameter of described projection (2b) is 0.1 ~ 100 μ m.
4. mixed type unequal-interval patterned substrate as claimed in claim 1 is characterized in that: the distance between the projection (2b) in same projection cycle (2) is not equidistant.
5. mixed type unequal-interval patterned substrate as claimed in claim 1 is characterized in that: described basic substrate (1) employing Sapphire Substrate or silicon carbide substrates.
6. mixed type unequal-interval patterned substrate as claimed in claim 1, it is characterized in that: the height of described projection (2b) is 0.1 ~ 100 μ m.
7. mixed type unequal-interval patterned substrate as claimed in claim 1, it is characterized in that: the distance between the adjacent protrusion (2b) is 0.1 ~ 100 μ m.
8. the preparation method of a mixed type unequal-interval patterned substrate is characterized in that, adopts following processing step:
(1) make photolithography plate, in some groups of light tight zones of photolithography plate design, every group of light tight zone is comprised of a plurality of light tight circle not of uniform size, and the distance between the light tight circle is not equidistant, and the remainder of photolithography plate is the light transmission part; The diameter of light tight circle is 0.1 ~ 100 μ m;
(2) to resist coating on the planar substrate of sapphire material or silicon carbide material, the gluing thickness of photoresist is 0.5～4 μ m, the photolithography plate that uses step (1) to obtain carries out exposure imaging, expose the zone that needs photoetching in planar substrate behind the exposure imaging, the light tight zone consistent with photolithography plate is covered by photoresist;
(3) planar substrate that step (2) is obtained is carried out the ICP etching, obtains patterned substrate.
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| CN201210548819.2A CN103050598B (en) | 2012-12-17 | 2012-12-17 | Mixed type unequal-interval patterned substrate and its preparation method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545411A (en) * | 2013-10-30 | 2014-01-29 | 华南理工大学 | LED patterned substrate with main patterns and secondary patterns and LED chip |
| CN104078542A (en) * | 2014-06-23 | 2014-10-01 | 华南理工大学 | Dual-pattern LED patterned substrate and LED chip |
| CN104465927A (en) * | 2014-11-28 | 2015-03-25 | 华南理工大学 | Pattern optimized LED substrate with cone cluster type patterns and LED chip |
| CN104716242A (en) * | 2013-12-12 | 2015-06-17 | 华顺科技股份有限公司 | Epitaxial substrate, method for manufacturing same, and light emitting diode |
| CN105821387A (en) * | 2016-04-05 | 2016-08-03 | 南京航空航天大学 | Sapphire optimal performance improving method based on micron-order array structure and yttrium oxide film |
| CN109301046A (en) * | 2018-07-16 | 2019-02-01 | 友达光电股份有限公司 | Light emitting element, display device, and method for manufacturing light emitting element and display device |
| US10243099B2 (en) | 2017-05-16 | 2019-03-26 | Epistar Corporation | Light-emitting device |
| CN110444641A (en) * | 2019-08-13 | 2019-11-12 | 黄山博蓝特半导体科技有限公司 | A kind of graphical compound substrate of high brightness and preparation method thereof |
| CN112951962A (en) * | 2021-01-28 | 2021-06-11 | 广东中图半导体科技股份有限公司 | Polygonal concave patterned substrate and LED epitaxial wafer |
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| US20070262330A1 (en) * | 2006-05-15 | 2007-11-15 | Samsung Electro-Mechanics Co., Ltd. | Light emitting device having multi-pattern structure and method of manufacturing same |
| US20080230793A1 (en) * | 2006-02-09 | 2008-09-25 | Seoul Opto Device Co., Ltd. | Patterned Substrate For Light Emitting Diode and Light Emitting Diode Employing the Same |
| CN102820386A (en) * | 2011-06-11 | 2012-12-12 | 昆山中辰矽晶有限公司 | Method for manufacturing epitaxial substrate, light-emitting diode and method for manufacturing light-emitting diode |
| CN203013783U (en) * | 2012-12-17 | 2013-06-19 | 江苏新广联科技股份有限公司 | Hybrid unequal interval patterned substrate |
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| US20080230793A1 (en) * | 2006-02-09 | 2008-09-25 | Seoul Opto Device Co., Ltd. | Patterned Substrate For Light Emitting Diode and Light Emitting Diode Employing the Same |
| US20070262330A1 (en) * | 2006-05-15 | 2007-11-15 | Samsung Electro-Mechanics Co., Ltd. | Light emitting device having multi-pattern structure and method of manufacturing same |
| CN102820386A (en) * | 2011-06-11 | 2012-12-12 | 昆山中辰矽晶有限公司 | Method for manufacturing epitaxial substrate, light-emitting diode and method for manufacturing light-emitting diode |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545411A (en) * | 2013-10-30 | 2014-01-29 | 华南理工大学 | LED patterned substrate with main patterns and secondary patterns and LED chip |
| WO2015062283A1 (en) * | 2013-10-30 | 2015-05-07 | 华南理工大学 | Led patterning substrate having primary and secondary patterns, and led chip |
| CN104716242A (en) * | 2013-12-12 | 2015-06-17 | 华顺科技股份有限公司 | Epitaxial substrate, method for manufacturing same, and light emitting diode |
| CN104078542A (en) * | 2014-06-23 | 2014-10-01 | 华南理工大学 | Dual-pattern LED patterned substrate and LED chip |
| CN104465927A (en) * | 2014-11-28 | 2015-03-25 | 华南理工大学 | Pattern optimized LED substrate with cone cluster type patterns and LED chip |
| CN104465927B (en) * | 2014-11-28 | 2017-08-25 | 华南理工大学 | The LED graphics-optimizeds substrate and LED chip of a kind of circular cone cluster type pattern |
| CN105821387A (en) * | 2016-04-05 | 2016-08-03 | 南京航空航天大学 | Sapphire optimal performance improving method based on micron-order array structure and yttrium oxide film |
| US10243099B2 (en) | 2017-05-16 | 2019-03-26 | Epistar Corporation | Light-emitting device |
| CN109301046A (en) * | 2018-07-16 | 2019-02-01 | 友达光电股份有限公司 | Light emitting element, display device, and method for manufacturing light emitting element and display device |
| CN109301046B (en) * | 2018-07-16 | 2020-08-07 | 友达光电股份有限公司 | Light emitting element, display device, and method for manufacturing light emitting element and display device |
| CN110444641A (en) * | 2019-08-13 | 2019-11-12 | 黄山博蓝特半导体科技有限公司 | A kind of graphical compound substrate of high brightness and preparation method thereof |
| CN112951962A (en) * | 2021-01-28 | 2021-06-11 | 广东中图半导体科技股份有限公司 | Polygonal concave patterned substrate and LED epitaxial wafer |
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