CN109301046A - Light emitting element, display device, and method for manufacturing light emitting element and display device - Google Patents
Light emitting element, display device, and method for manufacturing light emitting element and display device Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
The invention provides a light-emitting element, a display device, and a method for manufacturing the light-emitting element and the display device. The light emitting element includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The first semiconductor layer has a first conductivity type and includes a first portion and a second portion. The second semiconductor layer has a second conductivity type. The second semiconductor layer overlaps with the first portion of the first semiconductor layer in a vertical projection direction. The light emitting layer is located between the second semiconductor layer and the first portion of the first semiconductor layer. The first part of the first semiconductor layer is provided with a first surface close to the light-emitting layer and a second surface far away from the light-emitting layer. The second surface has a first hole and a second hole. The first hole is closer to the edge of the first semiconductor layer than the second hole, and the depth of the first hole is greater than that of the second hole.
Description
Technical field
The present invention relates to a kind of light-emitting component and its manufacturing methods, and in particular to a kind of light emitting diode and its manufacturer
Method.
Background technique
Light emitting diode is a kind of electroluminescent semiconductor element.In general, light emitting diode is converted with energy
High-efficient, the advantages that reaction time is short, long service life.Therefore, light emitting diode becomes in recent years has both power saving and environmental protection spy
The primary illumination light source of point.Furthermore due to the breakthrough on light emitting diode manufactured size, one kind is directly by three primary colors light-emitting diodes
The technology for micro- light emitting diode indicator (micro LED display) that pipe is placed in dot structure occurs gradually over market
On.
Light emitting diode includes being connected with each other and a pair of of semiconductor layer that conductivity type is complimentary to one another, and including respectively electrically
It is connected to a pair of electrodes of a pair of of semiconductor layer.Electrode is disposed in proximity to be easy to produce surface again when the edge of light emitting diode
In conjunction with the problem of (surface recombination) and electric leakage.On the other hand, electrode is set to far from light emitting diode
When edge, the light that can be covered more luminous zone and reduce light emitting diode takes efficiency (light extraction
efficiency).In other words, how in the case where not influencing light and taking efficiency reduce light emitting diode surface in conjunction with leakage
The problem of electricity becomes one of the important topic of this field.
Summary of the invention
The present invention provides a kind of light-emitting component and its manufacturing method, can avoid shining in the case where not influencing light and taking efficiency
Element edge lead to the problem of surface in conjunction with electric leakage.
The light-emitting component of the embodiment of the present invention include the first semiconductor layer, the second semiconductor layer, luminescent layer, first electrode with
And second electrode.First semiconductor layer has the first conductive type, and including first part and second part.Second semiconductor layer tool
There is the second conductive type.Second semiconductor layer is Chong Die in upright projection direction with the first part of the first semiconductor layer.Luminescent layer position
Between the second semiconductor layer and the first part of the first semiconductor layer.The first part of first semiconductor layer has neighbouring shine
The second surface of the first surface of layer and separate luminescent layer.Second surface has at least one first hole and at least one second hole
Hole.At least one first hole compared at least one second hole close to the edge of the first semiconductor layer, and the of at least one first hole
One depth is greater than the second depth of at least one second hole.First electrode is electrically connected at the second part of the first semiconductor layer.
Second electrode is electrically connected at the second semiconductor layer.
In one embodiment of this invention, at least one second hole is multiple second holes, and adjacent in multiple second holes
The depth at one of the interface between nearly first part and second part is smaller than in multiple second holes one far from the interface
The depth of person.
In one embodiment of this invention, at least one first hole can be multiple first holes.Multiple first holes can edge
The first semiconductor layer edge arrangement.
In one embodiment of this invention, multiple first holes can close to and be connected, and can be along the first semiconductor layer
Edge extend.
In one embodiment of this invention, at least one first hole and at least one second hole can be cylindric.
In one embodiment of this invention, at least one first hole and at least one second hole it is cylindric towards luminescent layer
Direction can be the arc surface of central protrusion.
In one embodiment of this invention, the first hole and the second hole can close to and be connected.
In one embodiment of this invention, the first hole and the second hole can close to and be connected and constitute a hole.This
The depth of hole is successively decreased along the direction close to the edge of the first semiconductor layer towards the second part of the first semiconductor layer.
In one embodiment of this invention, light-emitting component may also include an at least interstitital texture, be set at least one first
In hole and at least one second hole.
In one embodiment of this invention, light-emitting component may also include an at least reflection layer, be set at least one first
The inner surface of hole and at least one second hole.
In one embodiment of this invention, the first part of the first semiconductor layer has thickness Tn, 0.5um < Tn≤10um.
The size of first depth and the second depth is respectively D1 and D2.0.5um≤Tn-D1 < 9.5um, and 0.5um < Tn-D2≤9.5um.
The display device of the embodiment of the present invention include array substrate, light-emitting component as described above, the first connection electrode with
Second connection electrode.Array substrate has the first connection pad and the second connection pad.Light-emitting component is set in array substrate.First connection
Electrode is electrically connected one connection pad of first electrode and ground, and the second connection electrode is electrically connected second electrode and the second connection pad.
The manufacturing method of the light-emitting component of the embodiment of the present invention includes the following steps.The first half are formed on the first support plate to lead
Body material layer, luminous material layer and the second semiconductor material layer.First semiconductor material layer has the first conductive type, and the second half
Conductor material layer has the second conductive type.Second semiconductor material layer is between the first support plate and the first semiconductor material layer.
At least one first hole and at least one second hole are formed in the first semiconductor material layer.At least one first hole and at least one
Direction of second hole from the surface of the first semiconductor material layer toward the second semiconductor material layer extend and not with luminous material layer
Contact.At least one first hole has the first depth.At least one second hole has the second depth.It is deep that first depth is greater than second
Degree.Second support plate is configured to the surface of the first semiconductor material layer.Remove the first support plate.Remove first semiconductor of a part
The luminous material layer of material layer, second semiconductor material layer of a part and a part, to form the first semiconductor layer, the second half
Conductor layer and luminescent layer.First semiconductor layer has first part and second part.Second semiconductor layer and luminescent layer covering the
A part and expose second part.At least one first hole and at least one second hole are located in first part, and at least one
First hole is compared at least one second hole adjacent to the edge of the first semiconductor layer.
In one embodiment of this invention, after forming each at least one first hole and each at least one second hole, hair
The manufacturing method of optical element, which may also include that, forms at least one filling in respectively at least one first hole and each at least one second hole
Structure.
In one embodiment of this invention, after forming each at least one first hole and each at least one second hole, hair
The manufacturing method of optical element may also include that form an at least light in respectively at least one first hole and each at least one second hole anti-
Penetrate layer.An at least reflection layer is formed in the inner surface of each at least one first hole and each at least one second hole.
In one embodiment of this invention, after forming the first semiconductor layer and the second semiconductor layer, light-emitting component
Manufacturing method, which may also include that, forms first electrode on the second part of the first semiconductor layer and on the second semiconductor layer respectively
With second electrode.
The manufacturing method of the display device of the embodiment of the present invention include light-emitting component as described above manufacturing method and
Following steps.Above-mentioned light-emitting component is transposed in array substrate.Form the first connection electrode and the second connection electrode.First
Connection electrode be electrically connected first electrode and array substrate the first connection pad, and the second connection electrode be electrically connected second electrode with
Second connection pad of array substrate.First semiconductor layer is between the second semiconductor layer and array substrate or the second semiconductor layer
Between the first semiconductor layer and array substrate.
The light-emitting component of other embodiments of the invention includes the first semiconductor layer, the second semiconductor layer and luminescent layer.
First semiconductor layer has the first conductive type.First semiconductor layer includes first part and second part.Second semiconductor layer tool
There is the second conductive type.Second semiconductor layer is Chong Die in upright projection direction with the first part of the first semiconductor layer.Luminescent layer position
Between the second semiconductor layer and the first part of the first semiconductor layer.The first part of first semiconductor layer has adjacent to hair
The second surface of the first surface of photosphere and separate luminescent layer.Second surface has third hole.The depth of third hole along
The direction of second part close to the edge of the first semiconductor layer towards the first semiconductor layer is successively decreased, and third hole close to the
The depth at the edge of semi-conductor layer is greater than the depth at the edge far from the first semiconductor layer of third hole.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and cooperate specification attached
Figure is described in detail below.
Detailed description of the invention
Fig. 1 is the flow chart according to the manufacturing method of the display device of some embodiments of the invention.
Fig. 2A to Fig. 2 I is the structure of different phase in the manufacturing method according to the display device of some embodiments of the invention
Schematic cross-sectional view.
Fig. 3 A is the vertical view of the first semiconductor layer according to some embodiments of the invention, luminescent layer and the second semiconductor layer
Figure.
Fig. 3 B is the schematic cross-sectional view along the A-A ' line of Fig. 3 A.
Fig. 3 C is the schematic cross-sectional view along the B-B ' line of Fig. 3 A.
Fig. 4 is the schematic cross-sectional view according to the display device of some embodiments of the invention.
Fig. 5 A is the vertical view of the first semiconductor layer according to some embodiments of the invention, luminescent layer and the second semiconductor layer
Figure.
Fig. 5 B is the schematic cross-sectional view along the C-C ' line of Fig. 5 A.
Fig. 5 C is the schematic cross-sectional view along the D-D ' line of Fig. 5 A.
Fig. 6 A is the vertical view of the first semiconductor layer according to some embodiments of the invention, luminescent layer and the second semiconductor layer
Figure.
Fig. 6 B is the schematic cross-sectional view along the E-E ' line of Fig. 6 A.
Fig. 6 C is the schematic cross-sectional view along the F-F ' line of Fig. 6 A.
Fig. 7 A is the vertical view of the first semiconductor layer according to some embodiments of the invention, luminescent layer and the second semiconductor layer
Figure.
Fig. 7 B is the schematic cross-sectional view along the G-G ' line of Fig. 7 A.
Fig. 7 C is the schematic cross-sectional view along the H-H ' line of Fig. 7 A.
Description of symbols:
10,20: display device
100: light-emitting component
102: the first support plates
104: the first semiconductor material layers
104a: the first semiconductor layer
104a1: first part
104a2: second part
106,106a: luminescent layer
108: the second semiconductor material layers
108a: the second semiconductor layer
110: interstitital texture
112: protective layer
114: reflection layer
116: the second support plates
118: following layer
120: first electrode
122: second electrode
124: protection pattern
130: array substrate
132: isolation structure
134,234: following layer
136,236: the first connection electrode
138,238: the second connection electrode
BS: bottom surface
D1: the first depth
D2, D2a, D2b: the second depth
DR1: first direction
DR2: second direction
E1, E2, E3: edge
H1, H1-1, H1-2: the first hole
H2, H2-1, H2-2, H2a, H2a-1, H2a-2, H2b, H2b-1, H2b-2: the second hole
H3: third hole
OS: original support plate
S1: first surface
S2: second surface
S100, S102, S104, S106, S108, S110, S112, S114, S116: step
S100a, S100b, S100c, S100d: sub-step
T1, T2a, T2b: spacing
Te, Tn, Tp: thickness
Specific embodiment
Fig. 1 is the flow chart according to the manufacturing method of the display device of some embodiments of the invention.Fig. 2A to Fig. 2 I be according to
According to the schematic cross-sectional view of the structure of different phase in the manufacturing method of the display device of some embodiments of the invention.The present invention is implemented
The manufacturing method of the display device 10 of example includes manufacture light-emitting component 100, then manufactures display device 10 with light-emitting component 100.
The manufacturing method of the display device 10 of the embodiment of the present invention includes the following steps.
Fig. 1 and Fig. 2A to Fig. 2 C is please referred to, step S100 is carried out, forms the first semiconductor material on the first support plate 102
Layer 104, luminous material layer 106 and the second semiconductor material layer 108.In some embodiments, step S100 may include sub-step
Rapid S100a, sub-step S100b, sub-step S100c and sub-step S100d.
Fig. 1 and Fig. 2A are please referred to, sub-step S100a is carried out, forms the first semiconductor material layer on original support plate OS
104, luminous material layer 106 and the second semiconductor material layer 108.In some embodiments, the first semiconductor material layer is formed
104, the method for luminous material layer 106 and the second semiconductor material layer 108 may include Metallo-Organic Chemical Vapor deposition
(metal organic chemical vapor deposition, MOCVD), liquid phase epitaxy (liquid phase
Epitaxy), hydride gas-phase epitaxy (hydride vapor phase epitaxy), molecular beam epitaxy (molecular
Beam epitaxy), metal organic vapor (metal organic vapor phase epitaxy) or combinations thereof.The
Semiconductor material layer 104, luminous material layer 106 and the second semiconductor material layer 108 are sequentially formed on original support plate OS,
So that the first semiconductor material layer 104 is between original support plate OS and the second semiconductor material layer 108.In some embodiments
In, the material of original support plate OS may include sapphire (sapphire), GaAs, MgAl2O4、GaN、AlN、SiC、AlN、GaP、Si、
Ge、ZnO、MgO、LaAlO3、β-LiGaO2Or glass.The material and the second semiconductor material layer of first semiconductor material layer 104
108 material can respectively include Group III-V compound semiconductor, II-VI group compound semiconductor, IV-IV compounds of group and partly lead
Body, group IV-VI compound semiconductor or alloy semiconductor.For example, Group III-V compound semiconductor may include GaN, AlP,
AlAs, GaAs, GaSb, InP, InAs or combinations thereof.II-VI group compound semiconductor may include ZnO, ZnS, ZnSe, CdTe,
HgTe or combinations thereof.IV-IV compound semiconductor may include SiC.Group IV-VI compound semiconductor may include PbS, PbSe,
PbTe or combinations thereof.Alloy semiconductor may include SiGe, AlGaAs, AlInAs, AlGaAsSb or combinations thereof.First semiconductor material
The bed of material 104 can doped be the first conductive type, and the second semiconductor material layer 108 can doped be the second conductive type.First leads
Electric type can be complimentary to one another with the second conductive type (complementary).For example, the first conductive type can be N-type, and second leads
Electric type can be p-type.In some embodiments, the first semiconductor material layer 104 has thickness Tn, and 0.5um < Tn≤10um.?
In other embodiments, 1um≤Tn≤5um.The thickness Tp of second semiconductor material layer 108 can be 0.1 μm to 10 μm.In some realities
It applies in example, luminous material layer 106 can be single quantum well structures or multiple quantum well construction.For example, luminous material layer 106
It may include i layers of quantum well layers and i+1 layers of quantum barrier layer (omission is shown).Each quantum well layers can be located at two layers of quantum barrier
Between layer, and i is the natural number more than or equal to 1.The material of quantum well layers may include multilayer InGaN, multilayer Al GaAs, multilayer
AlInGaP or its fellow.The material of quantum barrier layer may include multilayer GaN, multilayer GaAs, multilayer InGaP or its fellow.
In some embodiments, the thickness Te of luminous material layer 106 can be 0.1nm to 100nm.
In some embodiments, the first semiconductor material layer 104, luminous material layer 106 and the second semiconductor are being formed
Buffer layer (not shown) can be also formed before material layer 108 on original support plate OS.The material of buffer layer may include Al2O3、GaN、
AlN, AlGaAs, GaAs or combinations thereof.Formed buffer layer method may include Metallo-Organic Chemical Vapor deposition, liquid phase epitaxy,
Hydride gas-phase epitaxy, molecular beam epitaxy, metal organic vapor or combinations thereof.
Fig. 1 and Fig. 2 B are please referred to, sub-step S100b is carried out, the first support plate 102 is bound to the second semiconductor material layer
108 side relative to the first semiconductor material layer 104.In some embodiments, the first support plate 102 can be glass support plate.It connects
, sub-step S100c is carried out, original support plate OS is removed from the first semiconductor material layer 104.In some embodiments, it removes
The method of original support plate OS may include laser lift-off (laser lift off) method.
Fig. 1 and Fig. 2 C are please referred to, sub-step S100d is then carried out, will include the first semiconductor material layer 104, shine material
The structure of the bed of material 106, the second semiconductor material layer 108 and the first support plate 102 is inverted.In this way, the second semiconductor material
Layer 108, luminous material layer 106 and the first semiconductor material layer 104 are sequentially stacked on the first support plate 102.Second semiconductor
Layer 108 is between the first support plate 102 and the first semiconductor material layer 104.
Fig. 1 and Fig. 2 D are please referred to, step S102 is carried out, forms at least one first hole in the first semiconductor material layer 104
Hole H1 and at least one second hole H2.In some embodiments, the quantity of the first hole H1 can be it is most (Fig. 2 D is cross-sectional view,
It can be only seen single first hole H1).In some embodiments, the quantity of the second hole H2 also can be majority.For example,
Multiple second hole H2 may include the second hole H2a and the second hole H2b each other side by side.Second hole H2a and the second hole
Hole H2b is located at the side of the first hole H1, and the second hole H2a is between the first hole H1 and the second hole H2b.
First semiconductor material layer 104 has each other relative first surface S1 and second surface S2.First surface S1 is adjacent
Nearly luminous material layer 106, and second surface S2 is far from luminous material layer 106.First hole H1 and the second hole H2 is by the first half
The second surface S2 of conductor material layer 104 extends toward the direction of luminous material layer 106, and does not contact with luminous material layer 106.
In other words, the first hole H1 and the second hole H2 is prolonged from the second surface S2 of the first semiconductor material layer 104 toward first surface S1
It stretches, but does not run through the first semiconductor material layer 104.In some embodiments, the width of the first hole H1 and the second hole H2
Width can be identical.In other embodiments, the width of the first hole H1 can also be different from the width of the second hole H2.Citing
For, the width of the first hole H1 and the second hole H2 can be respectively greater than or be equal to 0.5 μm, and less than the first semiconductor material layer
The half of 104 width.In some embodiments, the method for forming the first hole H1 and the second hole H2 may include laser drilling
Hole, anisotropic etching or combinations thereof.In some embodiments, the shape of the first hole H1 and the second hole H2 are respectively cylinder
Shape.In addition, in some embodiments, the bottom surface BS of the first hole H1 and the second hole H2 can be arc surface, and this arc surface
Direction protrusion of the center towards luminous material layer 106.In other embodiments, the bottom surface of the first hole H1 and the second hole H2
It can be plane (that is, the plane for not having radian substantially).
The first depth D1 of first hole H1 is greater than the second depth D2 of the second hole H2.In some embodiments, multiple
First hole H1 can be respectively provided with the first depth D1.Multiple second hole H2 can have depth different from each other.For example,
Two hole H2 may include the second hole H2a and the second hole H2b, and it is deep can be respectively provided with the second depth D2a and second
Spend D2b.First depth D1 is greater than any one of the second depth D2a and the second depth D2b.In some embodiments, second
Depth D2a can be greater than the second depth D2b.In other words, in these embodiments, the first hole H1, the second hole H2a and the second hole
The depth of hole H2b can sequentially successively decrease.For example, the first depth D1 of the first hole H1 can be 0.3 μm to 9.7 μm.Second hole
The second depth D2a of hole H2a can be 0.2 μm to 9.6 μm.The second depth D2b of second hole H2b can be 0.1 μm to 9.5 μm.
On the other hand, the bottom surface BS of the first hole H1 to the spacing T1 (that is, Tn-D1) of luminous material layer 106 is less than the second hole H2a
With the bottom surface of the second hole H2b respectively to the spacing T2a (that is, Tn-D2a) of luminous material layer 106 and spacing T2b (that is, Tn-
D2b).In some embodiments, spacing T2a is smaller than spacing T2b.For example, spacing T1 can be greater than or equal to 0.5 μm, and
Less than 9.5 μm.Spacing T2a and spacing T2b can be respectively greater than 0.5 μm, and be less than or equal to 9.5 μm.In some embodiments, no
Selection with the depth and spacing of hole is mainly to lead according to the first semiconductor material layer 104, luminous material layer 106, the second half
As considering, the different then effects of selection are different for the material of body material layer 108 and thickness proportion etc..
Fig. 1 and Fig. 2 E are please referred to, step S104 is optionally carried out, in each first hole H1 and each second hole
Interstitital texture 110 is formed in H2.In some embodiments, interstitital texture 110 may include protective layer 112 or reflection layer 114,
In section Example, interstitital texture 110 also can include protective layer 112 and reflection layer 11 simultaneously.Protective layer 112 and reflection layer
114 can be sequentially formed on the inner surface of each first hole H1 and each second hole H2.In some embodiments, protective layer
112 can lining in the inner surface of each first hole H1 and each second hole H2.Reflection layer 114 can protective mulch 112,
And each first hole H1 and each second hole H2 can be filled up.In some embodiments, reflection layer 114 can also protrude from
The second surface S2 (not shown) of semiconductor material layer 104.In some embodiments, the material of protective layer 112 may include oxygen
SiClx, silicon nitride, silicon oxynitride or combinations thereof.The material of reflection layer 114 may include aluminium, silver or other reflecting materials.At it
In his embodiment, interstitital texture 110 may also comprise dielectric material.In other words, dielectric material can be filled in each first hole H1
In each second hole H2.For example, dielectric material may include silica, silicon nitride, silicon oxynitride, aluminium oxide, dioxy
Change zirconium or combinations thereof.In other embodiments, can not also select carry out step S104 so that each first hole H1 with it is each
Second hole H2 is hollow hole.
Fig. 1 and Fig. 2 F are please referred to, step S106 is carried out, the second support plate 116 is bound to the first semiconductor material layer 104
Second surface S2.In some embodiments, the second support plate 116 can be bound to the first semiconductor material layer via following layer 118
104 second surface S2.For example, following layer 118 can be photothermal conversion (light-to-heat conversion, LTHC)
Layer, ultraviolet optical cement, release layer or combinations thereof.Then, step S108 is carried out, the first support plate 102 is removed.In some embodiments,
The method for removing the first support plate 102 can be for example laser lift-off.Before carrying out step S106 and step S108, step S106
Between step S108 or after step S106 and step S108, overall structure can be inverted (as shown in Figure 2 F).
It please refers to Fig. 1 and Fig. 2 G, carries out step S110, remove second semiconductor material layer 108 of a part, a part
First semiconductor material layer 104 of luminous material layer 106 and a part, to form the second semiconductor layer 108a, luminescent layer 106a
With the first semiconductor layer 104a.Remove second semiconductor material layer 108 of a part, first semiconductor material layer of a part
104 and the method for luminous material layer 106 of a part may include to the second semiconductor material layer 108, the first semiconductor material layer
104 are patterned with luminous material layer 106.In this way, can define the first semiconductor layer 104a, luminescent layer 106a and second
The size of semiconductor layer 108a, that is, can define the edge E1 of the first semiconductor layer 104a, the edge E2 of luminescent layer 106a and the
The edge E3 of two semiconductor layer 108a.First semiconductor layer 104a has first part 104a1 and second part 104a2.One
In a little embodiments, the volume of first part 104a1 can be greater than or equal to the volume of second part 104a2, but the present invention not with
This is limited.Second semiconductor layer 108a covers the first part 104a1 of the first semiconductor layer 104a, that is, the second semiconductor layer
108 is Chong Die in upright projection direction with the first part 104a1 of the first semiconductor layer 104a.Luminescent layer 106a, which is located at the second half, to be led
Between body layer 108a and the first part 104a1 of the first semiconductor layer 104a.In addition, the second semiconductor layer 108a and luminescent layer
106a does not cover the second part 104a2 of the first semiconductor layer 104a.In other words, the second semiconductor layer 108a is led with the first half
The second part 104a2 of body layer 104a is not overlapped on upright projection direction.In this way, be located on the first semiconductor layer 104a
And the second semiconductor layer 108a and luminescent layer 106a of the first semiconductor layer 104a of part covering can be considered a kind of platform (mesa)
Structure.
In addition to this, the first hole H1 and the second hole H2 is located in the first part 104a1 of the first semiconductor layer 104a.
First hole H1 is compared with the second hole H2 adjacent to the edge E1 of the first part 104a1 of the first semiconductor layer 104a.Second hole
H2 includes e.g. the second hole H2a and the second hole H2b.First hole H1, the second hole H2a and the second hole H2b can edges
The first direction DR1 sequential from edge E1 to the interface between first part 104a1 and second part 104a2.First
Direction DR1 can be substantially perpendicular to the interface between first part 104a1 and second part 104a2.The depth of first hole H1
Greater than the depth of the second hole H2.In addition, in some embodiments, adjacent to first part 104a1 and in the second hole H2
The depth of the one or more (e.g. the second hole H2b) at the interface between two part 104a2 is smaller than in the second hole H2 far
The depth of one or more (e.g. the second hole H2a) from this interface.In this way, multiple holes (including the first hole H1
DR1 it can successively decrease along a first direction with the depth of the second hole H2).
Fig. 3 A is the first semiconductor layer 104a, luminescent layer 106a and the second semiconductor according to some embodiments of the invention
The top view of layer 108a.Fig. 3 B is the schematic cross-sectional view along the A-A ' line of Fig. 3 A.Fig. 3 C is cutd open along the B-B ' line of Fig. 3 A
Depending on schematic diagram.
A to Fig. 3 C referring to figure 3. sees it by top view, and the edge E1 of the first semiconductor layer 104a is around the first semiconductor
Multiple sides of layer 104a.In some embodiments, multiple first hole H1 along the first semiconductor layer 104a first part
The edge E1 of 104a1 and arrange.In some embodiments, multiple first hole H1 can be arranged along the profile for being essentially U-shaped
Column.The profile of this U-shaped has the opening towards the interface between first part 104a1 and second part 104a2.Multiple first holes
Hole H1 is located between the edge E1 of first part 104a1 and multiple second hole H2.In other words, it is seen with top view, Duo Ge
Two hole H2 can be arranged in the inside (that is, side relative to edge E1 of multiple first hole H1) of multiple first hole H1.
In some embodiments, the second hole H2 may include the second hole H2a and the second hole H2b.Second hole H2a and the second hole
H2b can be located in the opening of the constituted U shape profile of above-mentioned multiple first hole H1.
Please refer to Fig. 1 and Fig. 2 H, step S112 can be carried out, on the second part 104a2 of the first semiconductor layer 104a with
And second be respectively formed first electrode 120 and second electrode 122 on semiconductor layer 108a.In other words, second electrode 122 is located at the
On the second semiconductor layer 108a above the first part 104a1 of semi-conductor layer 104a, and first electrode 120 is located at the first half
On the second part 104a2 of conductor layer 104a.First electrode 120 is electrically connected at the first semiconductor layer 104a, and second electrode
122 are electrically connected at the second semiconductor layer 108a.In this way, can be by first electrode 120 and second electrode 122 respectively to the
Semi-conductor layer 104a is biased with the second semiconductor layer 108a, and can make electrons and holes (hole) at luminescent layer 106a
In conjunction with and shine.It in some embodiments, can be in the second support plate 116 before forming first electrode 120 and second electrode 122
Pattern 124 is protected in upper formation.Pattern 124 is protected to cover the top surface of the second semiconductor layer 108a and the side of side wall, luminescent layer 106a
The top surface of the side wall and second part 104a2 of wall and the first semiconductor layer 104a.First electrode 120 and second electrode 122
The second part 104a2 and the second semiconductor of the first semiconductor layer 104a are respectively and electrically connected to across protection pattern 124
Layer 108a.In addition, in some embodiments, first electrode 120 can directly contact the first semiconductor layer with second electrode 122 respectively
The second part 104a2 of 104a and the second semiconductor layer 108a.In other embodiments, first electrode 120 and second electrode
122 can also be connected to the second part 104a2 and the second semiconductor layer of the first semiconductor layer 104a by other film layers
108a.For example, the material for protecting pattern 124 may include silica, silicon nitride or combinations thereof.First electrode 120 and second
The material of electrode 122 can respectively include aluminium, copper or other conductor materials.
So far, the production of the light-emitting component 100 of the embodiment of the present invention is completed.Electric current is expanded from second electrode 122 toward surrounding
The relationship that the resistivity of first semiconductor layer 104a of scattered 122 lower section of current spread length and second electrode is negatively correlated, and
The relationship being positively correlated with the thickness of the first semiconductor layer 104a of 122 lower section of second electrode.In embodiments of the present invention, by
One hole H1 be set to the first part 104a1 of the first semiconductor layer 104a at the proximal edge E1.In this way, which first can be made
Part 104a1's has the small thickness (e.g. spacing T1) in part and biggish resistivity at proximal edge E1.Therefore, lead to
It crosses and multiple first hole H1 is set, the electricity of edge E1 diffusion of the electric current from second electrode 122 toward the first semiconductor layer 104 can be shortened
Flow diffusion length.In other words, it can avoid light-emitting component 100 and the problem of surface is in conjunction with electric leakage occur in edge E1, and can mention
The luminous efficiency of high light-emitting component 100.Furthermore due to that light-emitting component 100 can be avoided to exist by the way that multiple first hole H1 are arranged
The problem of surface is in conjunction with electric leakage, occurs for edge E1, therefore is not required to be set to second electrode 122 far from edge E1.Change speech
It, can be solved in the case where not influencing light and taking efficiency surface of the light-emitting component 100 at edge E1 in conjunction with electrical leakage problems.
In addition to this, by the way that the first hole H1 and the second hole H2 is arranged, and make the first hole H1's and the second hole H2
Depth is successively decreased along the direction of the edge E1 from first part 104a1 inside, and the resistivity of first part 104a1 can be made substantial
Successively decrease along this direction.Therefore, the electric current in bootable light-emitting component 100, further to concentrate on the flow range of electric current
Region (that is, the region at the interface between first part 104a1 and second part 104a2) far from edge E1.Such one
Come, the luminous efficiency of light-emitting component 100 can be further improved.
In some embodiments, reflection layer 114 or other fillings can be filled in the first hole H1 and the second hole H2
Structure, so that the light that luminescent layer 106a is issued is advanced after being filled through structure reflection towards specific direction.In addition to this, affiliated neck
In domain technical staff can adjust the radian of the bottom surface BS of the first hole H1 and the second hole H2 or surface topography and adjusting shine it is first
The light emission direction of part 100.
Fig. 1 and Fig. 2 I are please referred to, the manufacturing method of the display device 10 of the embodiment of the present invention includes shape through the above steps
At light-emitting component 100.Then, display device 10 is manufactured with light-emitting component 100.Specifically, step S114 is carried out, by the first half
The light-emitting component 100 that conductor layer 104a, luminescent layer 106a and the second semiconductor layer 108a are constituted is transposed to array substrate 130
On.Array substrate 130 may include pixel circuit and signal wire.For example, signal wire may include data line or scan line.It will
The method that light-emitting component 100 is transposed in array substrate 130 may include removing the second support plate 116 and following layer 118.Some
In embodiment, the method for removing the second support plate 116 and following layer 118 may include to 118 irradiation of following layer or heating, so that then
Layer 118 is separated with the first semiconductor layer 104a.In this way, can be by following layer 118 and the second support plate 116 from the first semiconductor layer
104a is removed.Next, light-emitting component 100 can be placed in array substrate 130.In some embodiments, the member that shines can be made
First semiconductor layer 104a of part 100 makes the first semiconductor layer 104a be located at the second semiconductor layer then in array substrate 130
Between 108a and array substrate 130.In these embodiments, by the first semiconductor layer 104a then in array substrate 130 it
Before, isolation structure 132 and following layer 134 can be formed in array substrate.In some embodiments, isolation structure 132 can be surround
Following layer 134.First semiconductor layer 104a can be via following layer 134 and then in array substrate 130.In some embodiments
In, the material of isolation structure 132 may include coloured photoresist (photoresist) or high reflecting metal.The material of following layer 134 may include
Photoresist with stickiness.
Step S116 is carried out, the first connection electrode 136 and the second connection electrode 138 are formed.First connection electrode 136 can be covered
Lid first electrode 120, and can be by the side relative to array substrate 130 of the first semiconductor layer 104a via the first semiconductor layer
The side wall of 104a and extend in array substrate 130.In addition, the first connection electrode 136 can further be electrically connected at array base
First connection pad (not shown) of plate 130.Second connection electrode 138 can cover second electrode 122, and can be by the second semiconductor layer
The side relative to array substrate 130 of 108a extends in array substrate 130 via the side wall of light-emitting component 100.In addition,
Second connection electrode 138 can further be electrically connected at the second connection pad (not shown) of array substrate 130.In some embodiments
In, the material of the first connection electrode 136 and the second connection electrode 138 can respectively include aluminium, copper or other conductor materials.So far,
The manufacture of the display device 10 of the embodiment of the present invention is completed.
Fig. 4 is the schematic cross-sectional view according to the display device 20 of some embodiments of the invention.
I and Fig. 4 referring to figure 2., display device 20 shown in Fig. 4 are similar to display device 10 shown in Fig. 2 I.The two it
Between difference be display device 20 light-emitting component 100 be flip combine (flip chip bonding) by way of turn
It sets in array substrate 130.Specifically, can by the second part 104a2 of the first semiconductor layer 104a of light-emitting component 100 with
And second semiconductor layer 108a then in array substrate 130, and the second semiconductor layer 108a is made to be located at the first semiconductor layer 104a
Between array substrate 130.In some embodiments, by the second part 104a2 and second of the first semiconductor layer 104a
Semiconductor layer 108a, can be in the first electrode 120 and second electrode 122 of light-emitting component 100 then before array substrate 130
It is respectively formed the first connection electrode 236 and the second connection electrode 238.In other words, step S116 can be first carried out, is then walked again
Rapid S114.In some embodiments, the first connection electrode 236 and the second connection electrode 238 may respectively be conductor pin.In some realities
It applies in example, the thickness of the first connection electrode 236 can be greater than the thickness of the second connection electrode 238, so that the first connection electrode 236
Surface relative to the first semiconductor layer 104a can substantially be flush to the second connection electrode 238 relative to the first semiconductor layer
104 surface.In addition, following layer 234 can be pre-formed in array substrate 130.In some embodiments, a docking can be formed
Layer 234.By the second part 104a2 of the first semiconductor layer 104a and the second semiconductor layer 108a then in array substrate
After 130, a pair of of following layer 234 is electrically connected in the first connection pad of the first connection electrode 236 and array substrate 130 (not
Show) between and the second connection electrode 238 and the second connection pad (not shown) of array substrate 130 between.
Fig. 5 A is the vertical view of the first semiconductor layer according to some embodiments of the invention, luminescent layer and the second semiconductor layer
Figure.Fig. 5 B is the schematic cross-sectional view along the C-C ' line of Fig. 5 A.Fig. 5 C is the schematic cross-sectional view along the D-D ' line of Fig. 5 A.
Embodiment shown by A to Fig. 3 C and Fig. 5 A to Fig. 5 C, Fig. 5 A to Fig. 5 C is similar to Fig. 3 A to figure referring to figure 3.
Embodiment shown by 3C.It is only described at difference between the two below, same or similar place then repeats no more.Fig. 5 A to Fig. 5 C
Multiple first holes of the first semiconductor layer 104a be closely adjacent to each other and interconnect and form single the first hole H1-1.The
One hole H1-1 extends along the edge of the first part 104a1 of the first semiconductor layer 104a.In some embodiments, first
The pattern (A referring to figure 5.) of hole H1-1 can be essentially U-shaped pattern, and the opening of this U-shaped pattern is towards first part
Interface between 104a1 and second part 104a2.First hole H1-1 be located at multiple second hole H2-1 and each edge E1 it
Between.For example, multiple second hole H2-1 may include the second hole H2a-1 and the second hole H2b-1.Second hole H2a-1
It can be between the first hole H1-1 and the second hole H2b-1.Second hole H2a-1 and the second hole H2b-1 can be located at first
In the opening of the U shape profile of hole H1-1, and DR1 is arranged along a first direction by the second hole H2a-1 and the second hole H2b-1.
In some embodiments, the second hole H2a-1 and the second hole H2b-1 can be respectively along being parallel to first part 104a1 and
The second direction DR2 at the interface between two part 104a2 and extend.In other words, the second hole H2a-1 and the second hole H2b-1
Long axis can be respectively parallel to second direction DR2.
In addition to this, the first hole H1-1, the second hole H2a-1 shown in Fig. 5 A to Fig. 5 C and the second hole H2b-1
The relative size relationship of depth can be similar to the first hole H1, the second hole shown in Fig. 2 D to Fig. 2 I and Fig. 3 A to Fig. 3 C
The relative size relationship of the depth of H2a and the second hole H2b.Furthermore the first hole H1-1, the second hole shown in Fig. 5 A to Fig. 5 C
It the bottom surface of hole H2a-1 and the second hole H2b-1 also can be for substantially without the plane of radian.
Fig. 6 A is the vertical view of the first semiconductor layer according to some embodiments of the invention, luminescent layer and the second semiconductor layer
Figure.Fig. 6 B is the schematic cross-sectional view along the E-E ' line of Fig. 6 A.Fig. 6 C is the schematic cross-sectional view along the F-F ' line of Fig. 6 A.
Embodiment shown by A to Fig. 5 C and Fig. 6 A to Fig. 6 C, Fig. 6 A to Fig. 6 C is similar to Fig. 5 A to figure referring to figure 5.
Embodiment shown by 5C.It is only described at difference between the two below, same or similar place then repeats no more.Fig. 6 A to Fig. 6 C
The first hole H1-2 and the second hole H2-2 (including second hole H2a-2 and the second hole H2b-2) be closely adjacent to each other and
It interconnects.It describes in another way, the first hole H1-2, the second hole H2a-2 are connected with the second hole H2b-2 and are formed
Single a hole.Depth between the different zones of the single hole shown in Fig. 6 A to Fig. 6 C is simultaneously discontinuous.
Fig. 7 A is the vertical view of the first semiconductor layer according to some embodiments of the invention, luminescent layer and the second semiconductor layer
Figure.Fig. 7 B is the schematic cross-sectional view along the G-G ' line of Fig. 7 A.Fig. 7 C is the schematic cross-sectional view along the H-H ' line of Fig. 7 A.
It please refers to embodiment shown by Fig. 6 A to Fig. 6 C and Fig. 7 A to Fig. 7 C, Fig. 7 A to Fig. 7 C and is similar to Fig. 6 A to figure
Embodiment shown by 6C.It is only described at difference between the two below, same or similar place then repeats no more.In Fig. 7 A to figure
In embodiment shown in 7C, at least one first hole and at least one second hole can be connected with each other as single a third hole H3,
And the adjacent area of third hole H3 has continuous depth.In some embodiments, Fig. 7 B is please referred to, the of third hole H3
Three depth D3 are along the edge E1 of the first part 104a1 close to the first semiconductor layer 104a towards the side of second part 104a2
To successively decreasing, that is, DR1's third depth D2 of third hole H2 successively decreases along a first direction.On the other hand, Fig. 7 C, third are please referred to
The third depth D3 of hole H3 can first successively decrease along second direction DR2 to be incremented by again.In some embodiments, the depth of third hole H3
Degree can be 0.1 μm to 9.5 μm.
In conclusion the embodiment of the present invention by the first hole is set to the first semiconductor layer first part it is close
Edge, so that thickness and biggish resistance that the first part of the first semiconductor layer has part relatively thin close to edge
Rate.Electric current is above the second semiconductor layer and Chong Die in upright projection direction with the first part of the first semiconductor layer by being set to
Electrode is spread toward surrounding.The relationship that the thickness of the first part of the length of current spread and the first semiconductor layer is positively correlated, and
The negatively correlated relationship with the resistivity of the first part of the first semiconductor layer.Therefore, the embodiment of the present invention passes through setting first
Hole can shorten current spread length of the electric current from above-mentioned electrode toward the edge-diffusion of the first semiconductor layer.In other words, it can avoid
At edge the problem of surface is in conjunction with electric leakage occurs for light-emitting component, and the luminous efficiency of light-emitting component can be improved.Furthermore due to
Can be avoided the problem that by the first hole of setting light-emitting component edge occur surface in conjunction with electric leakage, therefore being not required to will be above-mentioned
Electrode is set to far from edge.In other words, light-emitting component can be solved in the case where not influencing light and taking efficiency in edge
Surface in conjunction with electrical leakage problems.
In addition to this, by the way that the first hole and the second hole are arranged in the first part of the first semiconductor layer, and make
The depth of one hole and the second hole is along from the edge of first part toward the interface direction between first part and second part
Successively decrease, the resistivity of first part can be made to successively decrease essentially along this direction.Therefore, the electric current in bootable light-emitting component, with
The flow range of electric current is further concentrated on into the region far from edge.In this way, which light-emitting component can be further improved
Luminous efficiency.
Although the present invention is disclosed as above with embodiment, however, it is not to limit the invention, any technical field
Middle technical staff, without departing from the spirit and scope of the invention, when can make a little variation and retouching, therefore protection of the invention
Range is subject to view as defined in claim.
Claims (18)
1. a kind of light-emitting component, comprising:
One first semiconductor layer has a first conductive type, and wherein first semiconductor layer includes a first part and one second
Part；
One second semiconductor layer has a second conductive type, wherein second semiconductor layer and first semiconductor layer this
A part is overlapped in upright projection direction, and
One luminescent layer, between second semiconductor layer and the first part of first semiconductor layer；
One first electrode is electrically connected at the second part of first semiconductor layer；And
One second electrode is electrically connected at second semiconductor layer,
Wherein the first part of first semiconductor layer has a first surface of the neighbouring luminescent layer and far from the luminescent layer
A second surface, which has at least one first hole and at least one second hole, at least one first hole compared with
At least one second hole is close to an edge of first semiconductor layer, and one first depth of at least one first hole is greater than
One second depth of at least one second hole.
2. light-emitting component as described in claim 1, wherein at least one second hole is multiple second holes, and the multiple
The depth at one of the interface in the second hole between the neighbouring first part and the second part is less than the multiple second
Depth far from one of the interface in hole.
3. light-emitting component as described in claim 1, wherein at least one first hole is multiple first holes, along this first
The edge of semiconductor layer arranges.
4. light-emitting component as claimed in claim 3, wherein the multiple first hole close to and be connected, and along this first
The edge of semiconductor layer extends.
5. light-emitting component as described in claim 1, wherein at least one first hole and at least one second hole are cylinder
Shape.
6. light-emitting component as claimed in claim 5, the wherein cylinder of at least one first hole and at least one second hole
Shape towards the direction of the luminescent layer be central protrusion arc surface.
7. light-emitting component as described in claim 1, wherein first hole and second hole close to and be connected.
8. light-emitting component as claimed in claim 7, wherein first hole and second hole close to and be connected and constitute
One hole, a depth of the hole along close to the edge of first semiconductor layer towards first semiconductor layer this second
Successively decrease in partial direction.
9. light-emitting component as described in claim 1 further includes an at least interstitital texture, be set at least one first hole with
In at least one second hole.
10. light-emitting component as described in claim 1 further includes an at least reflection layer, it is set at least one first hole
With the inner surface of at least one second hole.
11. light-emitting component as described in claim 1, wherein the first part of first semiconductor layer has a thickness Tn,
Wherein 0.5um < Tn≤10um, and the size of first depth and second depth is respectively D1 and D2,0.5um≤Tn-D1 <
9.5um, and 0.5um < Tn-D2≤9.5um.
12. a kind of display device, comprising:
Array basal plate has one first connection pad and one second connection pad；
Light-emitting component as described in any one of claims 1 to 11 is set in the array substrate；And
One first connection electrode and one second connection electrode, first connection electrode are electrically connected the first electrode and first connect with this
Pad, and second connection electrode is electrically connected the second electrode and second connection pad.
13. a kind of manufacturing method of light-emitting component, comprising:
One first semiconductor material layer, a luminous material layer and one second semiconductor material layer are formed on one first support plate,
In first semiconductor material layer have a first conductive type, second semiconductor material layer have a second conductive type, and should
Second semiconductor material layer is located between first support plate and first semiconductor material layer；
At least one first hole and at least one second hole are formed in first semiconductor material layer, wherein this at least one first
Hole and at least one second hole are from a surface of first semiconductor material layer toward the direction of second semiconductor material layer
Extend and do not contacted with the luminous material layer, which has one first depth；At least one second hole tool
There is one second depth, which is greater than second depth；
One second support plate is bound to the surface of first semiconductor material layer；
Remove first support plate；And
This of first semiconductor material layer of removal a part, second semiconductor material layer of a part and a part are luminous
Material layer, to form one first semiconductor layer, one second semiconductor layer and a luminescent layer, wherein first semiconductor layer has one
First part and a second part, second semiconductor layer and the luminescent layer cover the first part and expose this second
Point, at least one second hole is located in the first part at least one first hole with this, and at least one first hole relatively should
At least one second hole is adjacent to an edge of first semiconductor layer.
14. the manufacturing method of light-emitting component as claimed in claim 13, formed respectively at least one first hole with respectively this is extremely
After few one second hole further include: form at least one in respectively at least one first hole and respectively at least one second hole and fill out
Fill structure.
15. the manufacturing method of light-emitting component as claimed in claim 13, formed respectively at least one first hole with respectively this is extremely
After few one second hole further include: form an at least light in respectively at least one first hole and respectively at least one second hole
Reflecting layer, wherein an at least reflection layer is formed in respectively at least one first hole and the one of respectively at least one second hole
Surface.
16. the manufacturing method of light-emitting component as claimed in claim 13, the second half led forming first semiconductor layer with this
After body layer further include: form one the on the second part of first semiconductor layer and on second semiconductor layer respectively
One electrode and a second electrode.
17. a kind of manufacturing method of display device, comprising:
Light-emitting component as described in any one of claims 1 to 11 is transposed in array basal plate；And
One first connection electrode and one second connection electrode are formed, which is electrically connected the first electrode and the battle array
One first connection pad of column substrate, second connection electrode are electrically connected one second connection pad of the second electrode Yu the array substrate,
Wherein first semiconductor layer is located between second semiconductor layer and the array substrate or second semiconductor layer is located at
Between first semiconductor layer and the array substrate.
18. a kind of light-emitting component, comprising:
One first semiconductor layer has a first conductive type, and wherein first semiconductor layer includes a first part and one second
Part；
One second semiconductor layer has a second conductive type, wherein second semiconductor layer and first semiconductor layer this
A part is overlapped in upright projection direction, and
One luminescent layer, between second semiconductor layer and the first part of first semiconductor layer,
Wherein the first part of first semiconductor layer has a first surface of the neighbouring luminescent layer and far from the luminescent layer
A second surface, which has a third hole, and the depth of the third hole is along close to first semiconductor layer
The direction of an edge towards the second part of first semiconductor layer successively decrease, and the third hole the first half is led close to this
The depth at the edge of body layer is greater than the depth at the edge far from first semiconductor layer of the third hole.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107124440 | 2018-07-16 | ||
| TW107124440A TWI680601B (en) | 2018-07-16 | 2018-07-16 | Light emitting device, display apparatus and manufacturing methods of light emitting device and display apparatus |
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| EP4105995A4 (en) * | 2020-02-13 | 2023-11-08 | LG Electronics, Inc. | Display device using semiconductor light emitting element, and method for manufacturing same |
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| CN105449061B (en) * | 2014-09-02 | 2017-12-05 | 展晶科技(深圳)有限公司 | LED crystal particle and its manufacture method |
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| US20060202212A1 (en) * | 2005-03-01 | 2006-09-14 | Hashimoto Jun-Ichi | Semiconductor optical device |
| CN102420281A (en) * | 2010-09-28 | 2012-04-18 | 晶元光电股份有限公司 | Photoelectric element and manufacturing method thereof |
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