CN102820386A - Method for manufacturing epitaxial substrate, light-emitting diode and method for manufacturing light-emitting diode - Google Patents
Method for manufacturing epitaxial substrate, light-emitting diode and method for manufacturing light-emitting diode Download PDFInfo
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- CN102820386A CN102820386A CN2011101658043A CN201110165804A CN102820386A CN 102820386 A CN102820386 A CN 102820386A CN 2011101658043 A CN2011101658043 A CN 2011101658043A CN 201110165804 A CN201110165804 A CN 201110165804A CN 102820386 A CN102820386 A CN 102820386A
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Abstract
The invention discloses a method for manufacturing an epitaxial substrate. The method comprises the steps of (1) forming a shielding layer on a substrate surface, and conducting lithography processing on the shielding layer in conjunction with a photomask, so that the shielding layer forms a plurality of first patterns which are arranged at intervals; and (2) conducting etching with first patterns formed in Step (1) serving as shields, enabling a substrate to form a plurality of preset patterns, and finally, removing first patterns to finish the manufacture of the epitaxial substrate, wherein each of the preset patterns comprises a peripheral portion, a groove and at least one protruding block, the groove is defined by the peripheral portion, and protruding blocks are located inside the groove. In addition, the invention also provides a light-emitting diode having the epitaxial substrate and a method for manufacturing the light-emitting diode.
Description
One, technical field
The present invention relates to a kind of manufacturing approach of brilliant substrate of heap of stone, a kind of light-emittingdiode and manufacturing approach thereof, specifically relate to the manufacturing approach of a kind of patterning brilliant substrate of heap of stone, a kind of light-emittingdiode and manufacturing approach thereof with brilliant substrate of heap of stone of this patterning.
Two, background technology
Consult Fig. 1, general light-emittingdiode (hereinafter to be referred as LED) structure has a brilliant substrate 11 of heap of stone, and the semiconductor light-emitting elements 12 that is formed on this brilliant substrate of heap of stone on 11.This semiconductor light-emitting elements 12 has one and is formed at second N-type semiconductor N 123 on this luminescent layer 122 with luminescent layer 122, that first N-type semiconductor N 121, that should brilliant substrate 11 of heap of stone be connected is formed on this first N-type semiconductor N 121, and is formed at first, second electrode 124,125 on this first, second type semiconductor layer 121,123 respectively.When the external world provided electric energy via these first, second electrode 124,125 cooperations, this luminescent layer 122 can be luminous with photoelectric effect when receiving electric energy.
And gallium nitride (GaN) the based semiconductor materials of using always with present LED assembly luminescent layer 122 are example; The refractive index of gallium nitride is about 2.5; And air refraction is 1, therefore, and when the light of spontaneous photosphere 122 generations advances to the interface of luminescent layer 122 and air; Easily because this luminescent layer 122 and air refringence and produce total reflection; Therefore the directly reflection and essence is got back to luminescent layer 122 of most light, thus in brilliant substrate 11 of heap of stone and semiconductor light-emitting elements 12, back and forth advance, therefore reduced the light extraction efficiency of light-emittingdiode.Therefore; The dealer is in order to solve the problem of total reflection between luminescent layer 122 and the air; The numerous and confused proposition made plane brilliant substrate 11 of heap of stone into substrate that the surface has different alligatoring structures; For example substrate surface is formed irregular alligatoring structure or make substrate surface form and have regularly arranged protruding kernel structure etc.; Utilization lets light after touching the alligatoring structure of this substrate, change reflection back travel path, and then reduces light in the total reflection probability of luminescent layer 122 with the interface of air, thereby promotes the light extraction efficiency of LED.
Consult Fig. 2; U.S. Pat 2010059789 publication numbers (hereinafter to be referred as 789 patents) disclose a kind of manufacture method of LED assembly; Be utilize the surface to have the of heap of stone brilliant substrate 2 of most concave, convex structures and make one have a high light extraction efficiency LED, manufacture method of this brilliant substrate 2 of heap of stone is: (1) forms the photoresist layer that one deck is made up of photoresist on a base material 21, be used a light shield; Via on this base material 21, form behind the micro-photographing process one have a predetermined pattern shielding 101; And with this base material 21 of first etch process etching part of covering of conductively-closed 101 not, and on this base material 21, form most patterns 102, (2) are with the aforementioned base material 21 that should form plural pattern 102 of heat treatment mode heating; The shielding 101 that makes this correspondence cover on most patterns 102 is out of shape in heating process; Thereby formation different-thickness, (3) then carry out the etching second time, should shield 101 with base material 21 etchings; On pattern 102, form groove 103 and projection 104; And obtaining the of heap of stone brilliant substrate 2 that the surface has most concave, convex structures, nationality is by forming the of heap of stone brilliant substrate 2 that most patterns 102 and each pattern 102 all have the concave, convex structure, to improve the light extraction efficiency of the LED that follow-up brilliant quality of heap of stone and lifting obtain.
Can know by above stated specification,, utilize material to receive thermogenetic deformation and make the shielding 101 that covers on the pattern 102 be transformed into structure with different-thickness because the concave, convex structure that the of heap of stone brilliant substrate of this 789 patent 2 forms is a nationality by with the photoresistance heating; Utilize the shielding 101 with different-thickness afterwards again, nationality is by the control of etching parameter, and this pattern 102 is etched into the pattern with concave, convex structure; Therefore can know; The concave, convex structure that should build each pattern 102 of brilliant substrate 2 can be subject to photoresistance and controlled by thermogenetic deformation, therefore, also only can obtain general like bowl-shape structure; And the more structural design can't be arranged; In addition, because processing procedure is wayward, so the also difficult control of those patterns uniformity each other.
Three, summary of the invention
In order to overcome above-mentioned defective, the present invention provides a kind of processing procedure easy, easy control, and the good patterning of pattern uniformity is built the manufacturing approach of brilliant substrate.
In addition, the present invention provides a kind of light-emittingdiode that promotes light extraction efficiency.
In addition, the present invention also provides a kind of manufacturing approach that promotes the light-emittingdiode of light extraction efficiency.
The manufacture method of the present invention's brilliant substrate of heap of stone is undertaken by following step:
(1) forms one deck screen at a substrate surface; And be used a light shield; This screen predetermined portions is removed, make this screen residual fraction form a plurality of first patterns that are intervally installed, this each first pattern has at least one one first non-etching region that is made up of this polymeric barrier layer materials, second a non-etching region; And a plurality of via removing the formed etching region of this polymeric barrier layer materials, and this second non-etching region ring encloses this etching region and this first non-etching region.
(2) first pattern that obtains with step (1) serves as that shielding is carried out etching downwards from this substrate surface, makes this base material form a plurality of predetermined pattern simultaneously, afterwards, removes this first pattern, accomplishes the making of this brilliant substrate of heap of stone.Wherein, each predetermined pattern has an outer part, a groove that defines by this outer part, and at least one is positioned at the projection of this groove.
Light-emittingdiode of the present invention comprises following part:
1. build brilliant substrate for one; Has a body; And a plurality of predetermined pattern that raise up and be intervally installed by this body surface, this each predetermined pattern has an outer part, a groove that is defined by this outer part, and at least one is positioned at the projection of this groove.
2. semiconductor light-emitting elements is arranged on the surface that this brilliant substrate of heap of stone has predetermined pattern, and is luminous with photoelectric effect when electric energy is provided, and when luminous, the photon of advancing to this brilliant orientation substrate of heap of stone can be reflected when running into predetermined pattern and essence outwards penetrates.
The manufacture method of light-emittingdiode of the present invention is undertaken by following step:
(1) forms a screen at a substrate surface; And be used a light shield and this screen predetermined portions is removed to this substrate surface surface expose; Make this screen residual fraction form a plurality of first patterns that are intervally installed; This each first pattern has at least one one first non-etching region, second non-etching region that is made up of this polymeric barrier layer materials; And a plurality of via removing the formed etching region of this shielding material, and this second non-etching region ring encloses those etching regions and the first non-etching region.
(2) first pattern that obtains with step (1) serves as that shielding is carried out etching downwards from this substrate surface; Make this base material form a plurality of predetermined pattern, wherein, each predetermined pattern has an outer part, a groove that is defined by this outer part; And at least one is positioned at the projection of this groove; Afterwards, remove these first patterns, form a brilliant substrate of heap of stone.
(3) forming one on the surface that this brilliant substrate of heap of stone has predetermined pattern can be with the luminous semiconductor light-emitting elements of photoelectric effect when reception adds electric energy.
The invention has the beneficial effects as follows: utilize light shield design and cooperate etch process, can form a plurality of of heap of stone brilliant substrates simultaneously with etched mode once with predetermined pattern, not only easy, the easy control of processing procedure, and can promote the homogeneity of these predetermined pattern; In addition, but also nationality change the geometry of these projections easily by the design of shielding pattern.
Four, description of drawings
Fig. 1 is the LED structure sketch map of this prior art;
Fig. 2 is the making schematic flow sheet of the brilliant substrate of heap of stone with most concave, convex structures of prior art;
Fig. 3 is the prepared light-emittingdiode sketch map of preferred embodiment of the present invention;
Fig. 4 is the partial schematic diagram of the predetermined pattern of aid illustration Fig. 3;
Fig. 5 is the flow chart of preferred embodiment of the present invention;
Fig. 6 is the schematic flow sheet of aid illustration Fig. 5;
Fig. 7 is the sketch map of the aspect of explanation light shield of the present invention;
Fig. 8 is the sketch map of the aspect of another light shield of explanation the present invention;
The L-I-V figure of the CPSS that Fig. 9 makes for preferred embodiment of the present invention and the Plannar of convention.
Figure 10-12 forms the sketch map of position for explanation coating layer of the present invention.
Five, embodiment
Embodiment: the manufacture method of light-emittingdiode of the present invention, as shown in Figure 3, this light-emittingdiode comprises a brilliant substrate 3 of heap of stone, and a semiconductor light-emitting elements 4.
Cooperate and consult Fig. 4, said brilliant substrate 3 of heap of stone can be selected from materials such as sapphire, silicon, oxide, carborundum and constitute, and has a body 31; And a plurality of predetermined pattern 32 that raise up and be intervally installed by body 31 surfaces; This each predetermined pattern 32 has an outer part 321 that defines a groove 323, and a plurality of projection 322 that is positioned at this groove 323 and all is taper, and this each projection 322 is not connected; Wherein, This each outer part 321 has one, and this groove 323 has depth D from body 31 upwardly extending height H, and this depth D is identical with this height H essence.
This semiconductor light-emitting elements 4 has first type semiconductor layer 41 that is connected with this body 31 and these predetermined pattern 32 surfaces, luminescent layer 42, one deck that one deck is formed on this first type semiconductor layer 41 are formed at second type semiconductor layer 43 on the luminescent layer 42; And be formed at first, second electrode 44,45 on this first, second type semiconductor layer 41,43 respectively; When the external world provided electric energy via these first, second electrode 44,45 cooperations, this luminescent layer 42 can be luminous with photoelectric effect after receiving electric energy.
Specifically, said first, second type semiconductor layer the 41, the 43rd is made up of electrical reciprocal III-V family semi-conducting material, for example can be selected from gallium nitride based semi-conducting material.Said luminescent layer 42 is can constitute with the photoelectric effect luminescent material after being selected from the reception electric energy, for example zinc sulphide, cadmium sulfide, gallium phosphide, arsenic gallium aluminium or gallium nitride etc.Said first, second electrode 44,45 is selected from the oxide or the nitride of nickel, lead, cobalt, iron, titanium, copper, rhodium, gold, ruthenium, tungsten, zirconium, molybdenum, tantalum, platinum, silver etc., or the material of wherein one or more combination constitutes.Of heap of stone brilliant substrate 3 is made up of sapphire in the present embodiment, and luminescent layer 42 is made up of gallium nitride, and first, second electricity 44,45 is made up of platinum.
Owing to should use design by brilliant substrate 3 of heap of stone with the separated predetermined pattern 32 of separating of most homogeneity ranges; The light that spontaneous photosphere 42 sends, advances towards brilliant substrate 3 of heap of stone changes the light course after reflecting in the projection and groove 322,323 backs of contact predetermined pattern 32; Reduce the total reflection probability of light between second N-type semiconductor N 43 and air interface, and be able to further promote the light extraction efficiency of this light-emittingdiode.
The specific embodiment of the manufacture method of light-emittingdiode of the present invention like Fig. 5 and Fig. 6, comprises following three steps:
(1) carry out step 51, form a plurality of first patterns 202 on a base material 200 surfaces.
Specifically; This step 51 is to form one deck screen 201 on a base material 200 surfaces earlier; Be used a light shield 300 then with a plurality of shielding pattern 301; These screen 201 predetermined portions are removed, and the remaining screen 201 of order forms a plurality of in these shielding pattern 301 corresponding first patterns 202.This screen 201 can be made up of silica, silicon nitride or photoresist, and these shielding pattern 301 are for designing change according to the predetermined pattern 32 that should be scheduled to form and the selection of employed photoresist.For example; When predetermined formation has the predetermined pattern 32 of plurality of bump 322; These shielding pattern 301 can be designed with a plurality of shielding pattern 301 rounded, that be the predetermined space setting and arrange for closest packing each other that have as shown in Figure 7; This each shielding pattern 301 has a plurality of all squarelys and the first non-transparent area 303, and a plurality of second non-transparent areas 304 that defined jointly by these transparent areas 302 of the transparent area arranged of dislocation 302, these transparent areas 302 of corral each other; Via the design of these shielding pattern 301, make this screen 201 form first pattern 202 corresponding in this base material 200 surfaces with these shielding pattern 301; And when predetermined formation has the predetermined pattern 32 of a projection 322; Then this each shielding pattern can be designed to as shown in Figure 8ly have one and be positioned at this shielding pattern 301 central authorities and all first non-transparent area 303, the transparent area 302 of this first non-transparent area 303 of corral of squarely, and ring encloses the pattern of the second non-transparent area 304 of this transparent area 302.
Need to prove, different shaped design such as that the shape of these first, second non-etching region can have on demand is for example square, circular, polygon, and obtain having the projection 322 of different geometries.
Also need to prove; When screen 201 is when being made up of silica or silicon nitride; Light shield 300 with predetermined mask pattern 301 capable of using directly carries out etching to this screen 201 for shielding, and this screen 201 is formed and these shielding pattern 301 corresponding first patterns 202; And when this screen 201 be when constituting by photoresist, the light shield 300 with predetermined mask pattern 301 then capable of using carries out micro-photographing process for shielding to this screen 201, and this screen 201 is formed and these shielding pattern 301 corresponding first patterns 202.In present embodiment, this shielding material 201 is to be made up of the eurymeric photoresist, and this light shield 300 is to be that example describes to have shielding pattern as shown in Figure 7 301.
At length say; This step 51 is earlier behind the screen 201 that formation one deck is made up of the eurymeric photoresist on this base material 200; Re-use 300 pairs of these screens 201 of this light shield and carry out micro-photographing process with predetermined mask pattern 301; These screen 201 predetermined portions are removed to base material 200 surfaces expose, make residual screen 201 form a plurality of and these shielding pattern 301 corresponding first patterns 202, this each first pattern 202 has a plurality of first non-etching region 203, second non-etching regions 204 that are made up of this photoresist; And it is a plurality of via removing formed etching region 205 behind this photoresist; These etching region 205 common rings enclose and define these first etching regions 203, and make these first non-etching region 203 each intervals, and these second etching region, 204 rings enclose these etching regions 205.
(2) carry out step 52, first pattern, 202 screens that form with step (1) cover, and etching is carried out on these base material 200 surfaces downwards certainly, make a brilliant substrate 3 of heap of stone.
Specifically; Step 52 is to be shielding with first pattern 202, utilizes dry-etching, for example high-density electric slurry etching, reactive ion etch; Or Wet-type etching mode; For example use etching solutions such as phosphoric acid, sulphur phosphoric acid or potassium hydroxide,, make base material 200 form most predetermined pattern 32 simultaneously from base material 200 surface etchings downwards; Each predetermined pattern 32 has that a surface of exposing from this base material 200 extends upward and highly is the outer part of H 321, a groove 323 that is defined by this outer part 321; And a plurality ofly be positioned at this groove 323 and each other not to recessed 322 that connects, wherein, the degree of depth land deeds of this groove 323 is by etched parameter control and make it be less than or equal to the height H of this outer part.In present embodiment, step 52 is to carry out etching with the dry-etching mode, makes the depth D of this groove identical with the height H of this outer part 321.Afterwards, these first patterns 202 are removed, can make the of heap of stone brilliant substrate 3 that this has a plurality of predetermined pattern 32 as shown in Figure 3.
(3) carry out step 53, of heap of stone brilliant substrate 3 surfaces that form in step (2) form semiconductor light emitting component 4.
Specifically; Step 53 is to form this first type semiconductor layer 41 prior to the surface that this brilliant substrate 3 of heap of stone has predetermined pattern 32, forms luminescent layer 42 by the part surface of this first type semiconductor layer 41 crystalline substance upwards of heap of stone again, then; Form this second type semiconductor layer 43 in these luminescent layer 42 surfaces again; At last, form this first, second electrode 44,45 on these first, second type semiconductor layer 41,43 surfaces respectively, can make light-emittingdiode as shown in Figure 2.
Nationality of the present invention forms the first predetermined pattern 202, the etch process of arranging in pairs or groups again a time earlier by the design of light shield 300 on base material 200; Make this base material 200 form the predetermined pattern 32 of predetermined groove 323 of a plurality of tools and projection 322 simultaneously; And obtain this patterning brilliant substrate 3 of heap of stone, not only can effectively promote the light extraction efficiency that utilizes the light-emittingdiode that this brilliant substrate 3 of heap of stone makes, and the difference in thickness that produces after utilizing photoresistance via heat treatment with convention; Utilize this thickness difference again; After etching and compare in the method that substrate surface produces the concave, convex structure plan, this case not only processing procedure is controlled easily, and more can promote predetermined pattern 32 uniformity each other; In addition; Because this predetermined pattern 32 can make these brilliant substrate of heap of stone 3 surfaces form the micro-structural of concave, convex aspect; Compare with the of heap of stone brilliant substrate of convention tool plane aspect; Because this concave, convex appearance attitude differentiable structure can increase this first type semiconductor layer and the contact area that should build brilliant substrate, therefore also can further promote brilliant quality of heap of stone, reduce the defective generation of brilliant process of heap of stone.
Consult Fig. 9; Fig. 9 is specific embodiment of the invention light-emittingdiode (hereinafter to be referred as CPSS) that makes and the light-emittingdiode (hereinafter to be referred as Planar) that the of heap of stone brilliant substrate that utilizes the plane aspect makes, and is light-current-voltage (hereinafter to be referred as the L-I-V) measurement under the 20mA condition at input current.Can know that by Fig. 9 the light of the light-emittingdiode (Planar) that the of heap of stone brilliant substrate 3 prepared light-emittingdiodes (CPSS) that have an equally distributed predetermined pattern 32 with the present invention and the of heap of stone brilliant substrate by the plane aspect make takes out efficient and compares, and can significantly promote about 25%.
Need to prove; Carry out step 53, first type that forms was partly led 41 o'clock, can be with crystal type laterally of heap of stone; Nationality is controlled by processing procedure; Make this first N-type semiconductor N 41 not exclusively cover groove 323, and define at least one blind hole 33 jointly with this each predetermined pattern 32, nationality can let this brilliant substrate 3 of heap of stone have different refractive indexes by forming of these blind holes 33; Increase reflection and the refraction effect of light when this brilliant substrate 3 of heap of stone of contact, thereby further promote the light extraction efficiency of this light-emittingdiode.
Need to prove that also the manufacture method of this light-emittingdiode more comprises one and is implemented on this step 53 coating layer formation step before.Consult Figure 10～12; This step is on this brilliant substrate 3 of heap of stone, to form earlier one by refractive index and the coating layer 34 that should brilliant substrate 3 material different of heap of stone constitutes; For example can be in this groove 323, or the part of this body 31 and surface forms the coating layer 34 that oxide, nitride, silicon or silicide constitute, or have highly reflective; The coating layer 34 that constitutes of material such as metal, alloying metal for example; Let these brilliant substrate 3 nationalitys of heap of stone select and have different refractive indexes or albedo by the material of this coating layer, and refraction and the reflecting effect of light when this brilliant substrate 3 of heap of stone of contact that be increased, further to promote the light extraction efficiency of this light-emittingdiode.The position of this coating layer is provided with and can controls via the design of processing procedure, and for example, this coating layer 34 can be formed at this body 31 does not have the part surface that forms predetermined pattern 32, or can be formed on this predetermined pattern 32; Consult Figure 10～12; Figure 10～12nd done explanation with this coating layer 34 for being formed at this predetermined pattern 32; This coating layer 34 can be formed at base material 200 surfaces of outer part 321 corrals of this predetermined pattern 32; Or the surface of the side face of projection 322 and outer part 321 contiguous projections 322, or go the side face that is formed in these projections 322 simultaneously, surface and those base material 200 surfaces of these outer part 321 contiguous those projections 322 by these outer part 321 corrals.Nationality is by the setting of this coating layer 34, also can lower follow-uply brilliantly to form first N-type semiconductor N 41 and build between the brilliant substrate 3 the lattice formed poor row's problem that do not match with laterally of heap of stone.
In sum; Nationality of the present invention is by the design of light shield, prior to forming the first predetermined pattern, the etch process of arranging in pairs or groups again a time on this base material; Directly on this base material, form the predetermined pattern of most predetermined concave, convex structures simultaneously; Not only processing procedure is simple, easily control, and more can effectively promote the light extraction efficiency that utilizes the light-emittingdiode that the of heap of stone brilliant substrate behind this patterning makes; In addition; Because predetermined pattern makes this brilliant substrate surface of heap of stone form the micro-structural of concave, convex aspect and can increase the contact area of this first N-type semiconductor N in these brilliant substrates of heap of stone; Therefore also can promote brilliant quality of heap of stone, the defective that reduces brilliant process of heap of stone produces, so can reach the object of the invention really.
Claims (24)
1. the manufacturing approach of a brilliant substrate of heap of stone is characterized in that, is undertaken by following step:
1., form a screen at a substrate surface; And be used a light shield; This screen predetermined portions is removed; Make this screen residual fraction form a plurality of first patterns that are intervally installed, this each first pattern has at least one one first non-etching region that is made up of this polymeric barrier layer materials, second non-etching region and a plurality of by removing the formed etching region of this polymeric barrier layer materials, and this second non-etching region encloses this etching region and the first non-etching region for ring;
2., first pattern that 1. forms with step is shielding; Carry out etching downwards from this substrate surface; Make this base material form a plurality of predetermined pattern simultaneously, accomplish the making of this brilliant substrate of heap of stone, wherein; This each predetermined pattern has an outer part, a groove that is defined by outer part, and at least one is positioned at the projection of this groove.
2. the manufacturing approach of brilliant substrate of heap of stone as claimed in claim 1 is characterized in that, 1. formed each predetermined pattern of said step has a plurality of first patterns, and 2. formed each predetermined pattern of said step has plurality of bump.
3. the manufacturing approach of brilliant substrate of heap of stone as claimed in claim 2 is characterized in that, said plurality of bump is not connected each other.
4. the manufacturing approach of brilliant substrate of heap of stone as claimed in claim 1 is characterized in that, said outer part has one from the upwardly extending height of this body surface, and the degree of depth of this groove is identical with this height essence.
5. the manufacturing approach of brilliant substrate of heap of stone as claimed in claim 1 is characterized in that, 2. said step is to utilize high-density electric slurry etching, reactive ion etch mode to carry out.
6. a light-emittingdiode is characterized in that, comprises following component part:
One brilliant substrate of heap of stone; Has a body; And the predetermined pattern that raises up and be intervally installed by this body surface, this each predetermined pattern has groove that an outer part, define by this outer part and the projection that at least one is positioned at this groove;
Semiconductor light emitting component; Be arranged on the surface that this brilliant substrate of heap of stone has predetermined pattern; Luminous with photoelectric effect when electric energy is provided, and when luminous, the photon of advancing to this brilliant orientation substrate of heap of stone can be reflected when meeting each predetermined pattern and essence outwards penetrates.
7. light-emittingdiode as claimed in claim 6 is characterized in that, said each predetermined pattern has plurality of bump.
8. light-emittingdiode as claimed in claim 6 is characterized in that, said groove is to be defined jointly by this outer part and this body surface, and said projection is not connected each other.
9. light-emittingdiode as claimed in claim 6; It is characterized in that; Said semiconductor light-emitting elements have one be formed at said predetermined pattern surface first type semiconductor layer, and this first N-type semiconductor N and said predetermined pattern define at least one blind hole jointly.
10. light-emittingdiode as claimed in claim 6; It is characterized in that; Said semiconductor light-emitting elements have one be formed at said predetermined pattern surface first type semiconductor layer, and this first type semiconductor layer and this each predetermined pattern define at least one blind hole jointly.
11. light-emittingdiode as claimed in claim 6 is characterized in that, said brilliant substrate of heap of stone is selected from sapphire, silicon, oxide or carborundum.
12. light-emittingdiode as claimed in claim 6 is characterized in that, said brilliant substrate of heap of stone has a coating layer.
13. light-emittingdiode as claimed in claim 12 is characterized in that, said coating layer is oxide, nitride, silicon or silicide.
14. light-emittingdiode as claimed in claim 12 is characterized in that, said coating layer is selected from metal, metal alloy.
15. the manufacture method of a light-emittingdiode is characterized in that, is undertaken by following step:
1., form a screen at a substrate surface; And be used a light shield this screen predetermined portions is removed; Make this screen residual fraction form a plurality of first patterns that are intervally installed; This each first pattern has at least one one first non-etching region that is made up of this polymeric barrier layer materials, second a non-etching region, and a plurality of via removing the formed etching region of this polymeric barrier layer materials, and this second non-etching region encloses this etching region and the first non-etching region for ring;
2., first pattern that 1. forms with step serves as that shielding is carried out etching downwards from this substrate surface; Make this base material form a plurality of predetermined pattern simultaneously; This each predetermined pattern has an outer part, a groove that is defined by this outer part, reaches at least one and is positioned at the projection of this groove, afterwards; Remove this first pattern, form a brilliant substrate of heap of stone;
Can accomplish the making of this light-emittingdiode with the luminous semiconductor light-emitting elements of photoelectric effect when 3., outside the of heap of stone brilliant substrate surface formation one that 2. step forms is receiving, applying electric energy.
16. the manufacture method of light-emittingdiode as claimed in claim 15 is characterized in that, each predetermined pattern that 1. said step forms has a plurality of first patterns, and each predetermined pattern that 2. said step forms has plurality of bump.
17. the manufacture method of light-emittingdiode as claimed in claim 16 is characterized in that, said projection is not connected each other.
18. the manufacture method of light-emittingdiode as claimed in claim 15 is characterized in that, said outer part has a surperficial upwardly extending height that exposes from this base material, and the degree of depth of this groove is identical with this height essence.
19. the manufacture method of light-emittingdiode as claimed in claim 15; It is characterized in that; Said semiconductor light-emitting elements has one and is formed at one deck first type semiconductor layer of this brilliant substrate surface of heap of stone with horizontal crystal type of heap of stone, and this first type semiconductor layer and said predetermined pattern define at least one blind hole jointly.
20. the manufacture method of light-emittingdiode as claimed in claim 15; It is characterized in that; Said semiconductor light-emitting elements has one and is formed at one deck first type semiconductor layer of this brilliant substrate surface of heap of stone with horizontal crystal type of heap of stone, and this first type semiconductor layer defines at least one blind hole jointly in said each predetermined pattern.
21. the manufacture method of light-emittingdiode as claimed in claim 15 is characterized in that, 2. said step is to utilize high-density electric slurry etching, reactive ion etch mode to carry out.
22. the manufacture method of light-emittingdiode as claimed in claim 15 is characterized in that, 3. on this brilliant substrate of heap of stone, forms a coating layer before in said step.
23. the manufacture method of light-emittingdiode as claimed in claim 22 is characterized in that, said coating layer is oxide, nitride, silicon or silicide.
24. the manufacture method of light-emittingdiode as claimed in claim 22 is characterized in that, said coating layer is to be selected from metal, alloying metal.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050598A (en) * | 2012-12-17 | 2013-04-17 | 江苏新广联科技股份有限公司 | Hybrid unequal space patterned substrate and manufacturing method thereof |
| CN105513502A (en) * | 2014-09-22 | 2016-04-20 | 严敏 | Method for manufacturing composite glass substrate of monochromatic epitaxial LED display module |
| TWI651583B (en) * | 2015-08-31 | 2019-02-21 | 日商Ｈｏｙａ股份有限公司 | Photomask substrate, method for manufacturing photomask substrate, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1423842A (en) * | 1999-12-03 | 2003-06-11 | 美商克立光学公司 | Enhanced light extration in LEDS through the use of internal and external optical elements |
| CN1529915A (en) * | 2001-07-24 | 2004-09-15 | 日亚化学工业株式会社 | Semiconductor light emitting device with uneven substrate |
| US20080035052A1 (en) * | 2005-02-23 | 2008-02-14 | Genesis Photonics Inc. | Method for manufacturing a semiconductor substrate |
| JP2008270689A (en) * | 2007-04-25 | 2008-11-06 | Mitsubishi Chemicals Corp | GaN-BASED LIGHT EMITTING DIODE ELEMENT AND MANUFACTURING METHOD THEREOF |
| US20100059789A1 (en) * | 2008-09-11 | 2010-03-11 | Yeon-Jo Choi | Nitride semiconductor light-emitting device and method for fabricating thereof |
-
2011
- 2011-06-11 CN CN201110165804.3A patent/CN102820386B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1423842A (en) * | 1999-12-03 | 2003-06-11 | 美商克立光学公司 | Enhanced light extration in LEDS through the use of internal and external optical elements |
| CN1529915A (en) * | 2001-07-24 | 2004-09-15 | 日亚化学工业株式会社 | Semiconductor light emitting device with uneven substrate |
| US20080035052A1 (en) * | 2005-02-23 | 2008-02-14 | Genesis Photonics Inc. | Method for manufacturing a semiconductor substrate |
| JP2008270689A (en) * | 2007-04-25 | 2008-11-06 | Mitsubishi Chemicals Corp | GaN-BASED LIGHT EMITTING DIODE ELEMENT AND MANUFACTURING METHOD THEREOF |
| US20100059789A1 (en) * | 2008-09-11 | 2010-03-11 | Yeon-Jo Choi | Nitride semiconductor light-emitting device and method for fabricating thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050598A (en) * | 2012-12-17 | 2013-04-17 | 江苏新广联科技股份有限公司 | Hybrid unequal space patterned substrate and manufacturing method thereof |
| CN105513502A (en) * | 2014-09-22 | 2016-04-20 | 严敏 | Method for manufacturing composite glass substrate of monochromatic epitaxial LED display module |
| CN105513502B (en) * | 2014-09-22 | 2018-12-21 | 无锡极目科技有限公司 | A kind of manufacturing method of the compound glass substrate of monochrome epitaxy LED display module |
| TWI651583B (en) * | 2015-08-31 | 2019-02-21 | 日商Ｈｏｙａ股份有限公司 | Photomask substrate, method for manufacturing photomask substrate, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| US11226549B2 (en) | 2015-08-31 | 2022-01-18 | Hoya Corporation | Mask blank, phase shift mask, method for manufacturing thereof, and method for manufacturing semiconductor device |
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| CN102820386B (en) | 2017-01-25 |
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Effective date of registration: 20210806 Address after: No.18 Hengfei Road, Nanjing Economic and Technological Development Zone, Jiangsu Province, 210038 Patentee after: Nanjing Hanyu Caixin Technology Co.,Ltd. Address before: 215316 No. 303, Hanpu Road, Chengbei, Kunshan City, Jiangsu Province Patentee before: Kunshan Zhongchen Silicon Crystal Co.,Ltd. |