CN106784192B - A kind of light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- CN106784192B CN106784192B CN201611237083.1A CN201611237083A CN106784192B CN 106784192 B CN106784192 B CN 106784192B CN 201611237083 A CN201611237083 A CN 201611237083A CN 106784192 B CN106784192 B CN 106784192B
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- layer
- barrier layer
- current barrier
- gallium nitride
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- 238000002360 preparation method Methods 0.000 title description 3
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 238000001312 dry etching Methods 0.000 claims abstract description 8
- 238000001039 wet etching Methods 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 59
- 239000011241 protective layer Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000010079 rubber tapping Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of production method of light-emitting diode chip for backlight unit, comprising steps of A, deposit current barrier layer on p type semiconductor layer, current barrier layer with a thickness of 250-1000nm；Current barrier layer not aperture at this time；B, transparency conducting layer is deposited on the current barrier layer of not aperture, at this time current barrier layer not aperture, transparency conducting layer aperture；Wet etching is carried out, photoresist is not removed；C, dry etching current barrier layer is to p-type gallium nitride layer upper surface.The application method and process step is simplified, and technological parameter is easily controllable, is suitble to industrialized production.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly, are related to a kind of light-emitting diode chip for backlight unit and preparation method thereof.
Background technique
It is not able to satisfy push-pull effort when encapsulation bonding wire due to the adhesive force and metal of metal and ITO and the adhesive force of silica
It is fallen it is required that will cause electrode, causes the critical defect of semiconductor equipment.
To solve the above-mentioned problems, current barrier layer and ITO barrier layer of the LED chip on the market all below P electrode
Need aperture.Common practice is respectively as follows: current barrier layer photoetching and (opens below P electrode as shown in Figure 1, be divided into five photoetching
Hole), transparency conducting layer photoetching (punches) below P electrode, mesa etch photoetching, NP electrode photoetching, protective layer photoetching.So do
The step of talking about photoetching reaches five times, higher cost and the performance for influencing photoetching production capacity.
Chinese patent 201510547960.4 discloses a kind of production method of GaN base light emitting, comprising: in substrate
Upper formation extension lamination；Current blocking layer pattern and pattern for transparent conductive layer are formed in extension lamination；Dry etching is carried out, is made
It is exposed to obtain the first semiconductor layer of part N-type, forms table top；Insulating protective layer is formed on table top, to the insulating protective layer into
Row electrode photoetching forms first electrode aperture and second electrode aperture, metal electrode is formed in electrode, to form hair
Optical diode.But the pattern of the transparency conducting layer in above scheme and the dry etching of table top are that photoetching in two steps carries out.
Summary of the invention
It is an object of that present invention to provide a kind of production methods of light-emitting diode chip for backlight unit, to solve photoetching time in Tapping procedures
The excessive technical problem of number.
To achieve the above object, the present invention provides a kind of production methods of light-emitting diode chip for backlight unit, comprising steps of
A, deposit current barrier layer on p type semiconductor layer, current barrier layer with a thickness of 250-1000nm；It is electric at this time
Flow barrier not aperture；
B, transparency conducting layer is deposited on the current barrier layer of not aperture, at this time current barrier layer not aperture, it is transparent to lead
Electric layer aperture；Wet etching is carried out, photoresist is not removed；
C, dry etching current barrier layer is to p-type gallium nitride layer upper surface.
Preferably, further include step D:
D, using wet etching mode, remaining current barrier layer is removed, exposes p-type gallium nitride layer；It will with etching solution
Transparency conducting layer carries out secondary cleaning.
Preferably, the transparency conducting layer is plated on the p type semiconductor layer by evaporator or sputter coating method
Indium tin oxide films.
Preferably, the current barrier layer is the silica deposited by plasma enhanced chemical vapor deposition method
Film.
Preferably, the etching selection ratio of the current barrier layer and gallium nitride are as follows: current barrier layer: gallium nitride ≈ 1:6.
The application also provides a kind of light-emitting diode chip for backlight unit, the current barrier layer with a thickness of 250-1000nm.
Preferably, the etching selection ratio of the current barrier layer and gallium nitride are as follows: current barrier layer: gallium nitride ≈ 1:6.
The invention has the following advantages:
Chip of the invention due to by transparency conducting layer photoetching and mesa etch photoetching with being completed in a photoetching process,
Not only saved a photoetching number, and reduce mutually aligned for Twi-lithography caused by equipment precision error and designing
Increased offset distance is held, to increase luminous zone area.
The application method and process step is simplified, and technological parameter is easily controllable, is suitble to industrialized production.
Other than objects, features and advantages described above, there are also other objects, features and advantages by the present invention.
Below with reference to figure, the present invention is described in further detail.
Detailed description of the invention
The attached drawing constituted part of this application is used to provide further understanding of the present invention, schematic reality of the invention
It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the Tapping procedures schematic diagram of the prior art；
Fig. 2 is the Tapping procedures schematic diagram of the preferred embodiment of the present invention；
Fig. 3 is the finished product structure schematic diagram of the preferred embodiment of the present invention；
Wherein, 1- substrate, 2- buffer layer, 3-N type gallium nitride layer, 4- luminescent layer, 5-P type gallium nitride layer, 6- current blocking
Layer, 7- transparency conducting layer, 8-1-P electrode, 8-2-N electrode, 9- protective layer.
Specific embodiment
The embodiment of the present invention is described in detail below in conjunction with attached drawing, but the present invention can be limited according to claim
Fixed and covering multitude of different ways is implemented.
Referring to Fig. 1, Fig. 2, this application provides a kind of more simple production methods, specifically includes the following steps:
Step 1: in the axial direction, over the substrate by buffer layer setting, the n type semiconductor layer is arranged
On the buffer layer；The luminescent layer is arranged on the n type semiconductor layer, the p type semiconductor layer is arranged in institute
It states on luminescent layer；
Step 2: the top of the chip body is deposited into current blocking by plasma enhanced chemical vapor deposition method
Layer, and produced by way of photoetching and need figure, the current barrier layer below P electrode is not aperture at this time, referring to fig. 2
(a) and Fig. 2 (b).
Step 3: by the transparency conducting layer by evaporator or sputter coating method be plated in the p type semiconductor layer and
It on current barrier layer, and is produced by way of photoetching and needs figure, the transparency conducting layer below P electrode is aperture at this time
, referring to fig. 2 (b), after wet etching is complete, the exposure mask that photoresist is used as next step dry etching is not removed.Third the end of the step
When photoresist do not remove the exposure mask for being used as and etching next time, so eliminate mesa etch exposure mask pattern production photoetching.
Step 4: performing etching chip using inductively coupled plasma body, and normal gallium nitride region can be etched into N-type
Gallium nitride region, and the current barrier layer below P electrode is due to the etching selection ratio with gallium nitride are as follows: current barrier layer: nitridation
Gallium ≈ 1:6 is that will not be etched into p-type gallium nitride layer with certain thickness (250-1000nm) is closed.Then wet etching is used
Mode remaining current barrier layer is removed, expose p-type gallium nitride layer.Transparency conducting layer is carried out with etching solution again secondary clear
Aperture area and side wall are washed, some residue removals of edge are clean, it avoids leaking electricity, referring to fig. 2 (c).
Step 5: the P electrode and the N electrode are passed through into evaporator respectively or sputter coating method is separately positioned on
On the transparency conducting layer and the n type semiconductor layer, referring to fig. 2 (d).
Step 6: the top of second chip body is deposited into protection by plasma enhanced chemical vapor deposition method
Layer, referring to fig. 2 (e).
In addition, each photoetching contraposition has the precision problem of a contraposition in normal process, generally at 3-5 microns, and
When wet etching, since isotropism will cause 2 microns of lateral erosion.
And the application by transparency conducting layer photoetching and mesa etch photoetching it is two-in-one after, only 2 microns of lateral erosion, without
There are problems that aligning accuracy.The region for having 6 microns that makes a circle in product week of i.e. normal 5 this photoetching does not have electrically conducting transparent
Layer, and the application only has the region of 2 microns.
By taking 10*10mil chip as an example: the square micron of chip area 250*250=62500, make a circle in week 4 microns of area
The square micron of 250*4*4=4000.Area about has more 4000/62500=6.4%.
Here is the blue light encapsulation of data that each embodiment of experiment obtains.By following table it is found that comparing traditional handicraft, the application
Advantageous or fair in terms of voltage, wavelength, optical power, each index of AVG, overall performance is better than traditional product.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of production method of light-emitting diode chip for backlight unit, which is characterized in that comprising steps of
A, deposit current barrier layer on p-type gallium nitride layer, current barrier layer with a thickness of 250-1000nm；P electrode at this time
The current barrier layer not aperture of lower section；
B, transparency conducting layer is deposited on the current barrier layer of not aperture, and is produced by way of photoetching and needed figure,
Current barrier layer not aperture at this time, the transparency conducting layer aperture below P electrode carry out wet etching to transparency conducting layer, wet
After method corrodes, the exposure mask that photoresist is used as next step dry etching is not removed, eliminates the pattern of table top dry etching exposure mask
Make photo-mask process；
C, dry etching current barrier layer is to p-type gallium nitride layer upper surface；
D, using wet etching mode, remaining current barrier layer is removed, exposes p-type gallium nitride layer；It will be transparent with etching solution
Conductive layer carries out secondary cleaning.
2. manufacturing method according to claim 1, which is characterized in that the transparency conducting layer is by evaporator or to splash
Penetrate the indium tin oxide films that coating method is plated on the p-type gallium nitride layer.
3. manufacturing method according to claim 1, which is characterized in that the current barrier layer is to pass through plasma enhancing
The silica membrane that chemical vapor deposition goes out.
4. manufacturing method according to claim 1, which is characterized in that the etching selection of the current barrier layer and gallium nitride
Than are as follows: current barrier layer: gallium nitride ≈ 1:6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611237083.1A CN106784192B (en) | 2016-12-28 | 2016-12-28 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611237083.1A CN106784192B (en) | 2016-12-28 | 2016-12-28 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
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| CN106784192A CN106784192A (en) | 2017-05-31 |
| CN106784192B true CN106784192B (en) | 2019-10-29 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293620B (en) * | 2017-07-13 | 2019-06-04 | 厦门乾照光电股份有限公司 | A kind of LED chip and preparation method thereof |
| CN108110107A (en) * | 2017-12-18 | 2018-06-01 | 湘能华磊光电股份有限公司 | A kind of production method of LED chip |
| CN108336200A (en) * | 2018-03-27 | 2018-07-27 | 湘能华磊光电股份有限公司 | LED chip structure and preparation method thereof |
| WO2020015630A1 (en) * | 2018-07-17 | 2020-01-23 | 厦门乾照光电股份有限公司 | Semiconductor chip of light-emitting diode, and method for manufacturing same |
| CN108963039A (en) * | 2018-07-30 | 2018-12-07 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial structure and preparation method thereof |
| CN109285924A (en) * | 2018-12-10 | 2019-01-29 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of semiconductor chip |
| CN109599464A (en) * | 2018-12-11 | 2019-04-09 | 合肥彩虹蓝光科技有限公司 | A kind of light-emitting diode chip for backlight unit and its manufacturing method and application |
| CN111710761A (en) * | 2020-06-29 | 2020-09-25 | 湘能华磊光电股份有限公司 | LED chip preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694095A (en) * | 2011-03-22 | 2012-09-26 | 广东银雨芯片半导体有限公司 | Improved LED chip having current blocking layer and preparation method thereof |
| CN105244420A (en) * | 2015-08-28 | 2016-01-13 | 圆融光电科技股份有限公司 | Manufacturing method of GaN-based light emitting diode |
| CN106252476A (en) * | 2016-09-29 | 2016-12-21 | 山东浪潮华光光电子股份有限公司 | A kind of preparation method of GaN base light-emitting diode chip for backlight unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101756333B1 (en) * | 2010-10-12 | 2017-07-11 | 엘지이노텍 주식회사 | A light emitting device and a light emitting device package |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694095A (en) * | 2011-03-22 | 2012-09-26 | 广东银雨芯片半导体有限公司 | Improved LED chip having current blocking layer and preparation method thereof |
| CN105244420A (en) * | 2015-08-28 | 2016-01-13 | 圆融光电科技股份有限公司 | Manufacturing method of GaN-based light emitting diode |
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