CN108963039A - A kind of LED epitaxial structure and preparation method thereof - Google Patents
A kind of LED epitaxial structure and preparation method thereof Download PDFInfo
- Publication number
- CN108963039A CN108963039A CN201810854230.2A CN201810854230A CN108963039A CN 108963039 A CN108963039 A CN 108963039A CN 201810854230 A CN201810854230 A CN 201810854230A CN 108963039 A CN108963039 A CN 108963039A
- Authority
- CN
- China
- Prior art keywords
- layer
- barrier layer
- current barrier
- led epitaxial
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Abstract
The present invention provides a kind of LED epitaxial structure, including clad type reflected current barrier layer structure, the clad type reflected current barrier layer structure includes current barrier layer and the reflecting mirror that is arranged in inside the current barrier layer.Using LED epitaxial structure of the invention, the combination of reflecting mirror and current barrier layer, this composite construction can either improve current barrier layer to the reflex of light and can reduce absorption of the electrode to light again, so that the brightness of LED epitaxial structure is greatly enhanced.Invention additionally discloses a kind of production method of LED epitaxial structure, manufacture craft route is simple, is conducive to industrialization；Using mature technology (such as evaporation process, yellow light photoetching process, etch process) in the prior art and the equipment (PECVD device) of maturation in manufacture craft, technical parameter is easy to control, easy to operate；Using the LED core flake products for the LED epitaxial structure that production method of the present invention obtains, long service life, and brightness is improved.
Description
Technical field
The present invention relates to LED technical field of semiconductors, and in particular to a kind of LED epitaxial structure and preparation method thereof.
Background technique
GAN material belongs to third generation semiconductor material, has the characteristics that big, high temperature resistant, performance stabilization of forbidden bandwidth etc. is excellent
Point.Its structure is a kind of hexagonal wurtzite.
Preparing GAN material at present mainly uses MOCVD (vapour deposition process of plasma enhanced chemical) equipment blue precious
Preparation is grown on the substrate materials such as stone lining bottom, Si substrate.LED (Light-Emitting Diode English name: LightEmittingDiode) is
The semiconductor devices being prepared using GAN material is widely used in normal lighting, screen is shown, traffic light, biology doctor
The every aspect of the human production lifes such as treatment, agricultural, and play an important role wherein.LED classifies master from chip structure
There are positive assembling structure, inverted structure, vertical structure three categories, wherein positive assembling structure is mainstream structure.
Currently, the main technological difficulties of LED are luminance raising, performance boost, cost control etc..How to be promoted bright
Degree is the technical difficult points that LED chip faces, based on this engineers and technicians attempt structure, material, in terms of
Try to explore, as follows:
Application No. is 201610418150.3 patents of invention to provide a kind of high brightness green light LED epitaxial structure and growth work
Skill, upward sequence successively includes: that Sapphire Substrate, undoped GaN layer, N-type GaN layer, GaN stress are released under LED epitaxial structure
It puts composite layer, multiple quantum wells active illuminating layer, low temperature p-type GaN layer, potential barrier and stops AlGaN layer, high temperature p-type GaN layer, grow GaN
Stress release composite layer: GaN stress release composite layer includes VPU layers, VPN layers, and VPN layers of GaN film thickness 30-50nm are utilized
TEGa provides the source Ga, Si doping concentration 2 × 1017cm-3-5×1017cm-3, SiH4Si doping is provided；Grow the active hair of multiple quantum wells
Photosphere: taking the design of narrow trap wide base, pressure between 200-250Torr trap barrier thickness between 1:5-1:8；Quantum well radiation
Layer by 8-15 period InGaN/GaN/GaN2Trap builds structure composition；The present invention can be grown outside the green light LED of high brightness
Prolong piece.
Application No. is 201510738076.9 patent applications to disclose a kind of epitaxial growth method for improving LED luminance,
Comprising steps of processing Sapphire Substrate；Growing low temperature buffer layer；Grow the GaN layer for the Si that undopes；The N-type GaN of growth doping Si
Layer；The N-type GaN layer of growth doping Si；Growth stress releasing layer；Grow luminescent layer；The p-type GaN layer of growth doping Mg, Al；It is raw
The p-type GaN layer of long high temperature dopant Mg；It is finally cooled to 650-680 DEG C, keeps the temperature 20-30min, closes heating system and to gas system
System, furnace cooling.The present invention is effective to discharge since cyclical growth nInN/nGaN superlattice layer goes out as stress release
Stress inside the luminescent layer of growth improves the combined efficiency of hole and electronics, and then improves internal quantum.
Application No. is 201510059259.8 inventions to provide a kind of high brightness GaN-based LED epitaxial structure and its production side
Method, the epitaxial structure include: the nucleating layer stacked gradually, layer of undoped gan, N-type GaN layer, superlattice structure, periodically it is more
Quantum well structure, AlGaN layer, AlInGaN layers of low temperature p-type, P-type electron barrier layer and p-type GaN layer.The multi-quantum pit structure
In potential well point three one-step growths, on the one hand can reduce being spatially separating for electrons and holes wave function, improve the compound effect of radiativity
Rate；On the other hand first lead to the source a period of time During quantum trap growth, the source In can be made to be distributed in Quantum Well more
It is even, to further improve luminous efficiency.By the method for three one-step growth multi-quantum pit structures realize brightness raising and
The improvement of quantum efficiency decline.
In order to solve the technological difficulties of luminance raising, designing new LED structure of one kind and preparation method thereof has important meaning
Justice.
Summary of the invention
It, can be with using clad type reflected current barrier layer new construction it is an object of that present invention to provide a kind of LED epitaxial structure
Reflection of the current barrier layer to light is improved, reduces absorption of the electrode to light, and then promote the brightness of LED chip, particular technique side
Case is as follows:
A kind of LED epitaxial structure, including clad type reflected current barrier layer structure, clad type reflected current barrier layer
Structure includes current barrier layer and the reflecting mirror that is arranged in inside the current barrier layer.The setting of reflecting mirror is hindered with electric current
The combination of barrier, this composite construction can either improve current barrier layer to the reflex of light and can reduce electrode to light again
It absorbs, so that the brightness of LED epitaxial structure is greatly enhanced.Clad type reflected current barrier layer structure uses current barrier layer
With the combination of reflecting mirror, there is mirror-reflection and irreflexive double action, it is high to the reflectivity of light, with traditional silicon oxide film
Layer compares, and clad type reflected current barrier layer structure reflecting effect of the invention will be higher by 20-30%.
Preferred in above technical scheme, the reflecting mirror envelopes setting by the current barrier layer completely.It has used
Full clad structure, can improve reflecting effect and the internal reflecting mirror of protection is not corroded, aoxidizes etc. (reflecting mirror using than
More active metal or alloy), improve the reliability (such as service life) of product.If reflecting mirror is not coated completely,
Reflecting mirror certainly will be corroded, aoxidize, and current barrier layer can also be reduced to the reflectivity of light and the service life of product also can be big
It is big to shorten.
Preferred in above technical scheme, the distance at edge to the edge of the current barrier layer of the reflecting mirror is
400-1000 Ethylmercurichlorendimide, preferably 600-800 Ethylmercurichlorendimide, more preferable 650-700 Ethylmercurichlorendimide.Give full play to the phase of current barrier layer and reflecting mirror
Interaction improves the brightness of product.
Preferred in above technical scheme, the material of the reflecting mirror is aluminum or aluminum alloy.Can have to light good
Reflectivity, and cost of manufacture is taken into account, it is practical.Aluminium alloy is also possible to albronze and (adulterates in aluminum feedstock micro
Copper).
Preferred in above technical scheme, the shape of the reflecting mirror is cuboid, square, cylindrical body and polyhedron
At least one of；The reflecting mirror with a thickness of 200-600 Ethylmercurichlorendimide, preferred 300-500, preferred 400-450.Reflection
The thickness selection of mirror is suitable, will not reunite in RTA (rapid thermal annealing, 575 degrees Celsius of temperature, 10 minutes) alloy process, enhance
Mirror-reflection and diffusing reflection to light.Reflecting mirror cannot be too big, is unfavorable for greatly very much coating production entirely, reflecting mirror is exposed to will affect production
The performance of product.
Preferred in above technical scheme, the material of the current barrier layer is silica；The current barrier layer
With a thickness of 400-2000 Ethylmercurichlorendimide, preferred 600-1500 Ethylmercurichlorendimide, preferred 800-1200 Ethylmercurichlorendimide.Current barrier layer thickness closes
It is suitable, the cladding to reflecting mirror can be realized well.
It is preferred in above technical scheme, it further include that substrate processing, grown buffer layer, growth n type semiconductor layer, growth are more
Quantum well layer, growing P-type semiconductor layer, growth current extending, production P electrode and N electrode and growth transparent insulating layer；
The buffer layer, n type semiconductor layer, multiple quantum well layer and p type semiconductor layer are set gradually over the substrate；
The clad type reflected current barrier layer structure is between the p type semiconductor layer and current extending；
The transparent insulating layer is arranged on the current extending and n type semiconductor layer；
(preferable P is arranged on the p type semiconductor layer, current barrier layer and current extending in the P electrode simultaneously
Electrode position is located on the p type semiconductor layer, and P electrode line is located on current extending through the current barrier layer)；
The N electrode is arranged on the n type semiconductor layer.
Preferred in above technical scheme, the material of the substrate is Sapphire Substrate, silicon substrate and silicon carbide substrates
At least one of；
The buffer layer with a thickness of 20-40nm；
The n type semiconductor layer is n type gallium nitride layer, with a thickness of 2-4 μm；
The multiple quantum well layer with a thickness of 2.5-3.5nm；
The p type semiconductor layer is p-type gallium nitride layer, with a thickness of 50-100nm；
The current extending is ITO layer, with a thickness of 330-3000 Ethylmercurichlorendimide；
The material of the transparent insulating layer is at least one of silica and silicon nitride, with a thickness of 500-3000
Ethylmercurichlorendimide.
Invention additionally discloses a kind of production methods of any one of the above LED epitaxial structure, including production clad type reflection
Current barrier layer structure, specifically:
Firstly, one current barrier layer of growth regulation；
Secondly, using evaporation process and yellow light photoetching process (for routine techniques, including spin coating, exposure, development, post bake etc.
Step) on the first current barrier layer produce reflecting mirror；
Finally, two current barrier layer of growth regulation carries out reflecting mirror on the first current barrier layer with transmitting mirror structure
Cladding completely, obtains clad type reflected current barrier layer structure.
It is preferred in above technical scheme, further include make on substrate buffer layer, n type semiconductor layer, multiple quantum well layer,
P type semiconductor layer, current extending, transparent insulating layer, P electrode and N electrode, specifically:
Buffer layer, n type semiconductor layer, multiple quantum well layer and P are successively grown by MOCVD device over the substrate
Type semiconductor layer obtains LED epitaxial wafer；
LED epitaxial wafer grow clad type reflected current barrier layer structure, in which: the first current barrier layer with a thickness of
400-1000 Ethylmercurichlorendimide；Reflecting mirror with a thickness of 200-600 Ethylmercurichlorendimide；Plating pot revolving speed is that 3-8 turns/min, the plating of alloy during vapor deposition
Rate is 1-6A/s；Yellow light light exposure is 100-140mj/cm in yellow light photoetching process2Between, exposure spacing is 15-30 μm, yellow light
Post bake temperature is 140-160 DEG C；The pattern of reflecting mirror is at least one of cuboid, square, polyhedron and cylindrical body；
Second current barrier layer with a thickness of 400-1000 Ethylmercurichlorendimide；
One layer of ITO is sputtered in LED epitaxial wafer and clad type reflected current barrier layer structure as current extending；Lead to again
It crosses yellow light photoetching process and etch process is prepared into current extending pattern；
N type semiconductor layer and chip pattern are etched using yellow light photoetching process and ICP etching technics；
Using metal evaporation method electrode position be deposited one layer of electrode, metal electrode with a thickness of 1.2-2.5um；Through
Tube alloys technique is crossed, metal alloy is carried out between 300 DEG C -350 DEG C, forms alloy electrode；
PECVD device and yellow light photoetching process are used with exterior domain in electrode, transparent insulating layer is prepared, obtains outside LED
Prolong structure.
It further include subsequent technique, such as grinding, smart throwings, cutting, sliver, point survey, sorts, these steps are existing system
Make the conventional steps of LED chip.
Using the production method of LED epitaxial structure of the invention, effect is: manufacture craft route is simple, is conducive to industry
Change；In manufacture craft using mature technology (such as evaporation process, yellow light photoetching process, etch process) in the prior art and at
Ripe equipment (PECVD device), technical parameter is easy to control, easy to operate；The LED extension obtained using production method of the present invention
The LED core flake products of structure, brightness are greatly enhanced.
Other than objects, features and advantages described above, there are also other objects, features and advantages by the present invention.
Below with reference to figure, the present invention is described in further detail.
Detailed description of the invention
The attached drawing constituted part of this application is used to provide further understanding of the present invention, schematic reality of the invention
It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the LED epitaxial structure structural schematic diagram of the preferred embodiment of the present invention 1；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is the schematic diagram of clad type reflected current barrier layer structure in Fig. 1；
Wherein, 1, substrate, 2, buffer layer, 3, n type semiconductor layer, 4, multiple quantum well layer, 5, p type semiconductor layer, 6, cladding
Formula reflected current barrier layer structure, 6.1, current barrier layer, 6.2, reflecting mirror, 7, current extending, 8, transparent insulating layer, 9, P
Electrode, 10, N electrode.
Specific embodiment
The embodiment of the present invention is described in detail below in conjunction with attached drawing, but the present invention can be limited according to claim
Fixed and covering multitude of different ways is implemented.
Embodiment 1:
Referring to Fig. 1-Fig. 2, a kind of LED epitaxial structure, including substrate 1, buffer layer 2, n type semiconductor layer 3, multiple quantum well layer
4, p type semiconductor layer 5, clad type reflected current barrier layer structure 6, current extending 7, transparent insulating layer 8, P electrode 9 and N
Electrode 10, Details as Follows:
The material of the substrate 1 is at least one of Sapphire Substrate, silicon substrate and silicon carbide substrates, herein preferably
Sapphire Substrate.The buffer layer 2 with a thickness of 20-40nm.The n type semiconductor layer 3 is n type gallium nitride layer, thickness
It is 2-4 μm.The multiple quantum well layer 4 with a thickness of 2.5-3.5nm.The p type semiconductor layer 5 is p-type gallium nitride layer, thickness
For 50-100nm.
The clad type reflected current barrier layer structure includes current barrier layer 6.1 and is arranged in the current barrier layer
Internal reflecting mirror 6.2, is detailed in Fig. 1 and Fig. 3, preferred: the material of the current barrier layer 6.1 is silica；The electricity
Flow barrier 6.1 with a thickness of 400-2000 Ethylmercurichlorendimide；The reflecting mirror 6.2 is enveloped completely by the current barrier layer 6.1 and is set
It sets, the distance at edge to the edge of the current barrier layer 6.1 of the reflecting mirror 6.2 is that 400-1000 Ethylmercurichlorendimide (can in Fig. 3
Choosing: the distance d1 of the upper end-face edge of the upper end-face edge of the reflecting mirror 6.2 to the current barrier layer 6.1 and it is described instead
The minimum range d2 of lateral edge for penetrating the survey face edge of mirror 6.2 to the current barrier layer 6.1 is 400 Ethylmercurichlorendimides；It is described anti-
The distance d3 of lower edge for penetrating the lower edge of mirror 6.2 to the current barrier layer 6.1 is 1000 Ethylmercurichlorendimides)；The reflecting mirror
6.2 material is aluminum or aluminum alloy, and the shape of the reflecting mirror 6.2 is in cuboid, square, cylindrical body and polyhedron
At least one (other irregular shapes can also be processed into according to demand), the reflecting mirror 6.2 with a thickness of 200-600 angstroms
Rice.
The current extending 7 is ITO layer, with a thickness of 330-3000 Ethylmercurichlorendimide.
The material of the transparent insulating layer 8 is silica and/or silicon nitride, with a thickness of 500-3000 Ethylmercurichlorendimide.
The buffer layer 2, n type semiconductor layer 3, multiple quantum well layer 4 and p type semiconductor layer 5 are successively set on the lining
On bottom 1；The clad type reflected current barrier layer structure 6 is between the p type semiconductor layer 5 and current extending 7；It is described
Transparent insulating layer 8 is arranged on the current extending 7 and n type semiconductor layer 3；The P electrode 9 is arranged in the p-type simultaneously
(preferred herein: P electrode position is located at the p-type and partly leads on semiconductor layer 5, current barrier layer 6.1 and current extending 7
On body layer, P electrode line is located on current extending through the current barrier layer)；The setting of N electrode 10 is in the N-type half
In conductor layer 3.
The production method of above-mentioned LED epitaxial structure, specifically includes the following steps:
1, buffer layer 2, n type semiconductor layer 3, multiple quantum well layer are successively grown by MOCVD device on the substrate 1
4 and p type semiconductor layer 5, obtain LED epitaxial wafer；Specific growth course can refer to the prior art (one of which disclosed herein),
Such as: under 1000-1100 DEG C of hydrogen atmosphere, being passed through the H of 100-130L/min2, keep reaction cavity pressure 100-
300mbar is handled Sapphire Substrate 8-10 minutes；It is cooled at 500-600 DEG C, keeps reaction cavity pressure 300-600mbar, lead to
Inbound traffics are the NH of 10000-20000sccm3, 50-100sccm TMGa, 100-130L/min H2, on a sapphire substrate
Growth thickness is the low temperature buffer layer of 20-40nm；Reaction chamber temperature is increased to 1000-1200 DEG C, increases reaction cavity pressure extremely
300-600mbar is passed through the NH that flow is 30000-60000sccm3, 200-400sccm TMGa, 100-130L/min H2、
The SiH of 20-50sccm4, the N-type GaN layer of 2-4 μm of continued propagation doping Si, Si doping concentration 5 × 1018atoms/cm3-1×
1019atoms/cm3；Reaction cavity pressure 300-400mbar, 700-750 DEG C of temperature are kept, being passed through flow is 50000-
The NH of 70000sccm3, 20-40sccm TMGa, 1500-2000sccm TMIn, 100-130L/min N2, growth doping In
2.5-3.5nmInxGa(1-x)N layers, the x is between 0.20-0.25, emission wavelength 450-455nm；Increase temperature 750-850
DEG C, reaction cavity pressure 300-400mbar is kept, the NH that flow is 50000-70000sccm is passed through3, 20-100sccm TMGa,
The N of 100-130L/min2, grow 8-15nmGaN layers；Then repeated growth InxGa(1-x)N layers, repeated growth GaN layer is alternately given birth to
Long InxGa(1-x)N/GaN luminescent layer, control periodicity are 7-15；Reaction cavity pressure to 400-900mbar, temperature is increased to be increased to
950-1000 DEG C, it is passed through the NH that flow is 50000-70000sccm3, 20-100sccm TMGa, 100-130L/min H2、
The Cp of 1000-3000sccm2The p-type GaN layer of the high temperature dopant Mg of Mg, continued propagation 50-100nm, Mg doping concentration 1 ×
1019atoms/cm3-1×1020atoms/cm3。
2, clad type reflected current barrier layer structure 6 is made in LED epitaxial wafer, specifically: firstly, one electric current of growth regulation
Barrier layer (vapor deposition or sputtering the first ITO layer), the first current barrier layer with a thickness of 400-1000 Ethylmercurichlorendimide；Secondly, using steaming
Depositing process and yellow light photoetching process produce reflecting mirror on the first current barrier layer, in which: reflecting mirror with a thickness of 200-600
Ethylmercurichlorendimide；Plating pot revolving speed is that 3-8 turns/min during vapor deposition, and the plating rate of alloy is 1-6A/s；Yellow light exposes in yellow light photoetching process
Amount is 100-140mj/cm2Between, exposure spacing is 15-30 μm, and yellow light post bake temperature is 140-160 DEG C；The pattern of reflecting mirror
For at least one of cuboid, square, polyhedron and cylindrical body；Finally, in the first electric current with transmitting mirror structure
Two current barrier layer of growth regulation (the second ITO layer of vapor deposition or sputtering) coats reflecting mirror completely on barrier layer, is wrapped
Cover formula reflected current barrier layer structure 6, in which: the second current barrier layer with a thickness of 400-1000 Ethylmercurichlorendimide.Vapor deposition and sputtering are
Two different methods prepare ITO layer, can realize that the production of ITO layer, sputtering are got well than vapor deposition.
3, one layer of ITO is sputtered in LED epitaxial wafer and clad type reflected current barrier layer structure 6 as current extending 7；
Current extending pattern is prepared by yellow light photoetching process and etch process again, is specifically made of existing conventional method:
By yellow light spin coating (revolving speed 2000rpm, time are 20 seconds), (light exposure 100Mj/cm is exposed2), develop (3 minutes), utilizes
ITO is etched corrosion 100 seconds or so.
4, n type semiconductor layer 3 is etched using yellow light photoetching process and ICP etching technics and chip pattern, use are existing
Technique is completed.ICP etching technics mainly utilizes plasma etching.
5, using the method for metal evaporation electrode position be deposited one layer of electrode, metal electrode with a thickness of 1.2-2.5um；
By Tube alloys technique, metal alloy is carried out between 300 DEG C -350 DEG C, forms alloy electrode, specifically uses existing work
Skill production.
6, PECVD device and yellow light photoetching process are used with exterior domain in electrode, prepares transparent insulating layer 8, obtains LED
Epitaxial structure is specifically made of prior art.
7, it (such as grinding, smart throwings, cutting, sliver, point survey, is sorted) using subsequent technique, obtains LED chip.
Specific use and identical technique in the prior art, such as: it is cut into the chip particle of 635 μm of 635 μ m (25mil × 25mil),
100 crystal grain respectively are selected, under identical packaging technology, are packaged into White LED, then using integrating sphere in driving current item
The performance of test performance under part, the present embodiment gained LED chip is as shown in Table 1 below.
The performance comparison sheet of 1 embodiment 1 and comparative example 1-2 of table
As seen from Table 1:
In conjunction with the embodiments 1 and comparative example 1 it is found that technical solution of the present invention compared with the prior art, obtained by the present invention program
The brightness ratio prior art brightness of LED product is high, specifically improves 2.1%.
In conjunction with the embodiments 1 and comparative example 2 known to: in technical solution of the present invention reflecting mirror completely by current barrier layer cladding very
Important, if not exclusively cladding (being detailed in comparative example 2), the brightness of gained LED product is suitable with gained LED product brightness of the invention,
But service life and the obvious shortening of products obtained therefrom of the present invention, the reliability of product are largely effected on.
Comparative example 1:
1 difference from Example 1 of comparative example are as follows: clad type reflected current barrier layer structure is replaced with into common electric current
Barrier layer, no-mirror.
Comparative example 2:
2 difference from Example 1 of comparative example are as follows: the reflecting mirror in clad type reflected current barrier layer structure is not electric
Flow barrier coats completely, partial denudation.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial structure, which is characterized in that including clad type reflected current barrier layer structure (6), the clad type is anti-
Radio flow barrier structure includes current barrier layer (6.1) and the reflecting mirror (6.2) being arranged in inside the current barrier layer.
2. LED epitaxial structure according to claim 1, which is characterized in that the reflecting mirror (6.2) is by the current blocking
Layer (6.1) envelopes completely.
3. LED epitaxial structure described in -2 any one according to claim 1, which is characterized in that the side of the reflecting mirror (6.2)
The distance at edge to the edge of the current barrier layer (6.1) is 400-1000 Ethylmercurichlorendimide.
4. LED epitaxial structure according to claim 3, which is characterized in that the material of the reflecting mirror (6.2) is aluminium or aluminium
Alloy.
5. LED epitaxial structure according to claim 3, which is characterized in that the shape of the reflecting mirror (6.2) is rectangular
At least one of body, square, cylindrical body and polyhedron；
The reflecting mirror (6.2) with a thickness of 200-600 Ethylmercurichlorendimide.
6. LED epitaxial structure according to claim 5, which is characterized in that the material of the current barrier layer (6.1) is two
Silica；The current barrier layer (6.1) with a thickness of 400-2000 Ethylmercurichlorendimide.
7. LED epitaxial structure according to claim 3, which is characterized in that further include substrate (1), buffer layer (2), N-type half
Conductor layer (3), multiple quantum well layer (4), p type semiconductor layer (5), current extending (7), transparent insulating layer (8), P electrode (9) with
And N electrode (10)；
The buffer layer (2), n type semiconductor layer (3), multiple quantum well layer (4) and p type semiconductor layer (5) are successively set on institute
It states on substrate (1)；
The clad type reflected current barrier layer structure (6) is between the p type semiconductor layer (5) and current extending (7)；
The transparent insulating layer (8) is arranged on the current extending (7) and n type semiconductor layer (3)；
The P electrode (9) is arranged in the p type semiconductor layer (5), current barrier layer (6.1) and current extending (7) simultaneously
On；The N electrode (10) is arranged on the n type semiconductor layer (3).
8. LED epitaxial structure according to claim 7, which is characterized in that the material of the substrate (1) is sapphire lining
At least one of bottom, silicon substrate and silicon carbide substrates；
The buffer layer (2) with a thickness of 20-40nm；
The n type semiconductor layer (3) is n type gallium nitride layer, with a thickness of 2-4 μm；
The multiple quantum well layer (4) with a thickness of 2.5-3.5nm；
The p type semiconductor layer (5) is p-type gallium nitride layer, with a thickness of 50-100nm；
The current extending (7) is ITO layer, with a thickness of 330-3000 Ethylmercurichlorendimide；
The material of the transparent insulating layer (8) is silica and/or silicon nitride, with a thickness of 500-3000 Ethylmercurichlorendimide.
9. a kind of production method of LED epitaxial structure, which is characterized in that including making clad type reflected current barrier layer structure
(6), specifically:
Firstly, one current barrier layer of growth regulation；
Secondly, producing reflecting mirror on the first current barrier layer using evaporation process and yellow light photoetching process；
Finally, two current barrier layer of growth regulation carries out completely reflecting mirror on the first current barrier layer with transmitting mirror structure
Cladding, obtains clad type reflected current barrier layer structure (6).
10. the production method of LED epitaxial structure according to claim 9, which is characterized in that further include substrate (1) processing,
Grown buffer layer (2), growth n type semiconductor layer (3), growth multiple quantum well layer (4), growing P-type semiconductor layer (5), growth electricity
Extension layer (7), production P electrode (9) and N electrode (10) and growth transparent insulating layer (8) are flowed, specifically:
Buffer layer (2), n type semiconductor layer (3), multiple quantum well layer are successively grown by MOCVD device on the substrate (1)
(4) and p type semiconductor layer (5), LED epitaxial wafer is obtained；
LED epitaxial wafer grow clad type reflected current barrier layer structure (6), in which: the first current barrier layer with a thickness of
400-1000 Ethylmercurichlorendimide；Reflecting mirror with a thickness of 200-600 Ethylmercurichlorendimide；Plating pot revolving speed is that 3-8 turns/min, the plating of alloy during vapor deposition
Rate is 1-6A/s；Yellow light light exposure is 100-140mj/cm in yellow light photoetching process2Between, exposure spacing is 15-30 μm, yellow light
Post bake temperature is 140-160 DEG C；The pattern of reflecting mirror is at least one of cuboid, square, polyhedron and cylindrical body；
Second current barrier layer with a thickness of 400-1000 Ethylmercurichlorendimide；
Current extending (7) are grown in LED epitaxial wafer and clad type reflected current barrier layer structure (6)；Pass through yellow light light again
Carving technology and etch process are prepared into current extending pattern；
N type semiconductor layer (3) and chip pattern are etched using yellow light photoetching process and ICP etching technics；
Using metal evaporation method electrode position be deposited one layer of electrode, metal electrode with a thickness of 1.2-2.5um；By furnace
Pipe alloying technology carries out metal alloy between 300 DEG C -350 DEG C, forms alloy electrode；
PECVD device and yellow light photoetching process are used with exterior domain in electrode, transparent insulating layer (8) is prepared, obtains LED extension
Structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810854230.2A CN108963039A (en) | 2018-07-30 | 2018-07-30 | A kind of LED epitaxial structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810854230.2A CN108963039A (en) | 2018-07-30 | 2018-07-30 | A kind of LED epitaxial structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108963039A true CN108963039A (en) | 2018-12-07 |
Family
ID=64466557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810854230.2A Pending CN108963039A (en) | 2018-07-30 | 2018-07-30 | A kind of LED epitaxial structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108963039A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410363A (en) * | 2021-06-17 | 2021-09-17 | 中国科学院半导体研究所 | Micro LED chip structure, preparation method thereof and display device |
| CN117174798A (en) * | 2023-11-03 | 2023-12-05 | 江西兆驰半导体有限公司 | LED chip and preparation method thereof |
| CN117525233A (en) * | 2024-01-05 | 2024-02-06 | 南昌凯迅光电股份有限公司 | Small-size red light LED chip and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683540A (en) * | 2012-06-06 | 2012-09-19 | 安徽三安光电有限公司 | Gallium-nitride-based light-emitting diode and manufacturing method thereof |
| CN106784192A (en) * | 2016-12-28 | 2017-05-31 | 湘能华磊光电股份有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN106848019A (en) * | 2017-03-28 | 2017-06-13 | 湘能华磊光电股份有限公司 | A kind of high brightness LED chip structure and preparation method thereof |
| CN107180900A (en) * | 2016-03-11 | 2017-09-19 | 三星电子株式会社 | Luminescent device |
-
2018
- 2018-07-30 CN CN201810854230.2A patent/CN108963039A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683540A (en) * | 2012-06-06 | 2012-09-19 | 安徽三安光电有限公司 | Gallium-nitride-based light-emitting diode and manufacturing method thereof |
| CN107180900A (en) * | 2016-03-11 | 2017-09-19 | 三星电子株式会社 | Luminescent device |
| CN106784192A (en) * | 2016-12-28 | 2017-05-31 | 湘能华磊光电股份有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN106848019A (en) * | 2017-03-28 | 2017-06-13 | 湘能华磊光电股份有限公司 | A kind of high brightness LED chip structure and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410363A (en) * | 2021-06-17 | 2021-09-17 | 中国科学院半导体研究所 | Micro LED chip structure, preparation method thereof and display device |
| CN117174798A (en) * | 2023-11-03 | 2023-12-05 | 江西兆驰半导体有限公司 | LED chip and preparation method thereof |
| CN117174798B (en) * | 2023-11-03 | 2024-02-09 | 江西兆驰半导体有限公司 | LED chip and preparation method thereof |
| CN117525233A (en) * | 2024-01-05 | 2024-02-06 | 南昌凯迅光电股份有限公司 | Small-size red light LED chip and manufacturing method thereof |
| CN117525233B (en) * | 2024-01-05 | 2024-04-12 | 南昌凯迅光电股份有限公司 | Small-size red light LED chip and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5330040B2 (en) | Semiconductor device, semiconductor device, semiconductor wafer, and semiconductor crystal growth method | |
| CN105009309B (en) | The method for manufacturing nanostructured light emitting semiconductor device | |
| CN105190917B (en) | Nanostructured semiconductor light-emitting elements | |
| JP5189106B2 (en) | Semiconductor light emitting device configured to emit light of a plurality of wavelengths | |
| JP5323934B2 (en) | Semiconductor device, light emitting device, and manufacturing method thereof | |
| CN102270633B (en) | High-power flip-chip array LED chip and manufacturing method thereof | |
| JP2004179654A (en) | LIGHT-EMITTING DEVICE OF GaN GROUP, AND MANUFACTURING METHOD THEREOF | |
| TW201013987A (en) | Group III nitride semiconductor light emitting device, process for producing the same, and lamp | |
| CN108963039A (en) | A kind of LED epitaxial structure and preparation method thereof | |
| US20110297955A1 (en) | Semiconductor Light Emitting Diode | |
| CN103296154A (en) | Method for manufacturing group iii nitride semiconductor light-emitting element, group iii nitride semiconductor light-emitting element, lamp, and reticle | |
| WO2011079644A1 (en) | Light emitting diode and method for preparing the same | |
| CN101901862A (en) | Semiconductor light emitting element | |
| CN102064245A (en) | Method for manufacturing light-emitting diode | |
| JP2014036231A (en) | Semiconductor element manufacturing method | |
| CN109075224A (en) | semiconductor wafer | |
| TWI493747B (en) | Light emitting diodes and manufacture thereof | |
| CN103647008B (en) | The method of growth semi-polarity GaN thick film | |
| EP2230698B1 (en) | Light emitting device | |
| CN109768126B (en) | Manufacturing method of light-emitting diode epitaxial wafer | |
| CN112750926B (en) | Graphical aluminum nitride composite substrate, deep ultraviolet LED epitaxial structure and preparation method | |
| KR20080070656A (en) | Method for fabircating high quallty semiconductor light-emitting device on silicon substrates | |
| KR20190117179A (en) | Light emitting device for light amplification using graphene quantum dot and method for producing the device | |
| WO2021226121A1 (en) | Light emitting diodes with aluminum-containing layers integrated therein and associated methods | |
| CN110098296A (en) | Nitride green device based on Tamm phasmon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181207 |
|
| RJ01 | Rejection of invention patent application after publication |