CN102683540A - Gallium-nitride-based light-emitting diode and manufacturing method thereof - Google Patents
Gallium-nitride-based light-emitting diode and manufacturing method thereof Download PDFInfo
- Publication number
- CN102683540A CN102683540A CN201210183838XA CN201210183838A CN102683540A CN 102683540 A CN102683540 A CN 102683540A CN 201210183838X A CN201210183838X A CN 201210183838XA CN 201210183838 A CN201210183838 A CN 201210183838A CN 102683540 A CN102683540 A CN 102683540A
- Authority
- CN
- China
- Prior art keywords
- electrode
- barrier layer
- metallic reflector
- layer
- type layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to a gallium-nitride-based high-brightness light-emitting diode with a metal reflecting layer and a manufacturing method thereof. The light-emitting diode is characterized by comprising a substrate, an epitaxial layer formed on the substrate and formed by a P type layer, a light-emitting area and an N type layer, the metal reflecting layer formed on the epitaxial layer, a current barrier layer fully covered on the metal reflecting layer, a current expanding layer fully covered on the current barrier layer, an electrode P formed on the current expanding layer and an electrode N formed on the N type layer. A novel reflecting electrode structure is formed by enabling the current barrier layer to be covered outside the metal reflecting layer, the metal reflecting layer is effectively protected and is prevented from contacting with the air, oxidation of the metal reflecting layer is avoided, the resistance to high temperature and high humidity is improved, the novel reflecting electrode structure has the effect of current blocking simultaneously, and the light-emitting efficiency of a chip is further improved.
Description
Technical field
The present invention relates to a kind of gallium nitride based light emitting diode and preparation method thereof, especially relate to a kind of gallium nitride-based high-brightness light-emitting diode and preparation method thereof with metallic reflector.
Background technology
Light-emitting diode (English is Light Emitting Diode, is called for short LED) is a kind of light emitting semiconductor device that utilizes semi-conductive P-N junction electroluminescence principle to process.Pollution-free, advantages such as brightness is high, power consumption is little, the life-span is long, operating voltage is low, easy miniaturization that LED has.Since the basic LED of the gallium nitride nineties in 20th century (GaN) succeeded in developing, along with the continuous progress of research, its luminosity also improved constantly, and application is also more and more wider.
At present, be fit to the III-V group iii v compound semiconductor material that commercial blue green light LED all is based on GaN.Because the P-GaN layer hole concentration of GaN base LED epitaxial wafer is little, and P type layer thickness is less than 0.3 μ m, mostly appears from P type layer when luminous.And P type layer has absorption to light inevitably, causes the led chip external quantum efficiency not high, greatly reduces the luminous efficiency of LED.For this reason; The research that improves the LED luminous efficiency is comparatively active; Major technique has the graph substrate of employing technology, distributed current barrier layer (also claiming current barrier layer), distributed Bragg reflecting layer (the English Distributed Bragg Reflector of being is called for short DBR) structure, transparent substrates, surface coarsening, photonic crystal technology etc.
Referring to Fig. 1, in conventional formal dress light emitting diode construction, comprise substrate 100, the N type layer 101 that piles up from lower to upper, luminous zone 102, P type layer 103, current extending 104, P electrode 105 and be arranged on the N electrode 106 on N type layer 101 exposed surface.Because P electrode 106 (being generally the Cr/Pt/Au material) has absorption to light, the part light that makes luminescent layer send fails to emit, and causes light loss; Influence the luminous efficiency of chip; At present existing correlation technique makes light be reflected to get into chip internal again, launch chip surface through the one or many refraction then through below metal electrode, adding reflectance coating (like metal film or DBR), thereby increases luminous efficiency; The chip with reflecting electrode of the formation through setting up argent or aluminium mirror coating wherein; Often in the encapsulation of chip is aging, the unusual problem of light decay occurs, especially under hot and humid environment, reflective metals such as Al, Ag are oxidized more easily; Cause light efficiency to descend, even lost efficacy.
Number of patent application is that 201010000448.5 application for a patent for invention discloses a kind of light-emitting diode and manufacturing approach thereof, and said light-emitting diode comprises: a base board unit, a luminescence unit, a reflector element, one first electrode and one second electrode.This reflector element is with the light reflection of this first electrode of directive; And this reflector element comprises one first main body; This first electrode comprises first electrode body that is positioned at the top of this first main body accordingly, and the geometric radius of said first main body is greater than the geometric radius of this first electrode body.Through the design of this reflector element, its electric current resistance barrier is respond well and electric current is evenly spread, and this reflector element stops below and this first electrode of the direct directive of outer beam, and with the light reflection, reduces the extinction phenomenon of this first electrode, improves luminous efficiency.But the deficiency that the present invention exists has: reflective metals can be followed current extending (like the ITO conductive layer) contact, and the oxygen composition in the ITO conductive layer may cause metal oxidized with the reflective metals effect.And in the chip processing procedure, need the current extending (like the ITO conductive layer) to handle through high-temperature fusion, like reflective metals and ITO conductive layer contact portion arranged, cause oxidized inefficacy probability bigger, be unfavorable for the stability of chip processing procedure.
Summary of the invention
Technical problem to be solved by this invention is the deficiency that overcomes prior art, and a kind of GaN base high brightness LED with metallic reflector and preparation method thereof is provided.The present invention forms the new type reflection electrode structure through outside metallic reflector, coating current barrier layer, has effectively protected metallic reflector, avoids metallic reflector to contact with air, prevent oxidized, raising high temperature resistance high humidity ability; This structure has the effect of current blocking again concurrently simultaneously, and the electric current that reduces the chip electrode below gathers, and has further improved the luminous efficiency of chip.
According to a first aspect of the invention, a kind of gallium nitride based light emitting diode comprises: substrate; Epitaxial loayer is formed on this substrate, is made up of P type layer, luminous zone, N type layer; Metallic reflector is formed on the epitaxial loayer; Current barrier layer is formed on the epitaxial loayer, and coats said metallic reflector fully; Current extending is formed on the said current barrier layer, and the subregion contacts with said p type layer at least; The P electrode is formed on the said current extending; The N electrode is formed on the N type layer.
In first preferred embodiment of the present invention, said current barrier layer wraps up said metallic reflector fully.
In second preferred embodiment of the present invention, said current barrier layer covers said metallic reflector fully.
Further, above-mentioned metallic reflector be positioned under the P electrode and the metallic reflector lateral cross section long-pending to be greater than or equal to P electrode lateral cross section long-pending and long-pending less than the current barrier layer lateral cross section.
Further, above-mentioned metallic reflection layer material is optional with aluminium (Al) or silver (Ag) or nickel (Ni) etc.
Further, above-mentioned backing material can be selected sapphire (Al for use
2O
3) or carborundum (SiC) etc.
Further, above-mentioned current blocking layer material is optional with silicon dioxide (SiO
2), silicon nitride (SiN
x) or aluminium oxide (Al
2O
3) in a kind of or its combination.
Further, above-mentioned current expansion layer material is optional with a kind of or its combination in nickel/billon (Ni/Au) or nickel/tin indium oxide alloy (Ni/ITO) or tin indium oxide (ITO) or zinc oxide (ZnO) or In doping ZnO or Al doping ZnO or the Ga doping ZnO.
According to a second aspect of the invention, a kind of manufacture method of gallium nitride based light emitting diode, its step is following:
1) substrate is provided, epitaxial growth epitaxial loayer above that, it comprises p type layer, luminous zone and n type layer from top to down;
2) on the subregion of said epitaxial loayer, form metallic reflector and current barrier layer light;
3) on said epitaxial loayer, form current barrier layer, it coats said metallic reflector fully;
4) on said current barrier layer, form current extending, it contacts with said p type layer the subregion at least;
5) making P electrode and N electrode on the said current extending with on the said N type layer respectively.
Wherein, the said current barrier layer of step 3) coats said metallic reflector fully, promptly makes metallic reflector be positioned under the P electrode, and the long-pending P electrode lateral cross section that is greater than or equal to of metallic reflector lateral cross section is amassed and amassed less than the current barrier layer lateral cross section.
According to a third aspect of the present invention, a kind of manufacture method of gallium nitride based light emitting diode, its step is following:
1) substrate is provided, epitaxial growth epitaxial loayer above that, it comprises p type layer, luminous zone and n type layer from top to down;
2) at the formation current barrier layer of said epitaxial loayer, its internal package one metallic reflector;
3) on said current barrier layer, form current extending, it contacts with said p type layer the subregion at least;
4) making P electrode and N electrode on the said current extending with on the said N type layer respectively.
Wherein, step 2) said current barrier layer coats said metallic reflector fully, promptly makes metallic reflector be positioned under the P electrode, and the metallic reflector lateral cross section is long-pending, and to be greater than or equal to P electrode lateral cross section long-pending and long-pending less than the current barrier layer lateral cross section.
Compared with prior art, the invention has the beneficial effects as follows:
(1) through in conventional led chip electrode structure, sets up metallic reflector, reduce the absorption of metal electrode, thereby improve chip light emitting efficient light.
(2) the outer coating current barrier layer structure fully of the metallic reflective coating of setting up, promptly the metallic reflector lateral cross section is long-pending long-pending less than the current barrier layer lateral cross section, thereby avoids reflective metals to contact with air, protects its reflecting properties effectively, improves luminous efficiency.
(3) the current barrier layer structure has the effect of current blocking again concurrently, and the electric current that can reduce the chip electrode below gathers, and has further improved the luminous efficiency of chip.
Other features and advantages of the present invention will be set forth in specification subsequently, and, partly from specification, become obvious, perhaps understand through embodiment of the present invention.The object of the invention can be realized through the structure that in specification, claims and accompanying drawing, is particularly pointed out and obtained with other advantages.
Though will combine certain exemplary enforcement and method for using to describe the present invention hereinafter, and it will be appreciated by those skilled in the art that and be not intended to the present invention is limited to these embodiment.Otherwise, be intended to cover all substitutes, correction and the equivalent that are included in defined spirit of the present invention of appending claims and the scope.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used to explain the present invention with the embodiment of the invention, is not construed as limiting the invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is conventional formal dress light-emitting diode structure sketch map.
Fig. 2 is the generalized section that first embodiment of the invention is made gallium nitride-based high-brightness light-emitting diode.
Fig. 3 is the generalized section that second embodiment of the invention is made gallium nitride-based high-brightness light-emitting diode.
Parts symbol description among the figure:
100: Sapphire Substrate
101:N type layer
102: the luminous zone
103:P type layer
104: current extending
The 105:P electrode
The 106:N electrode
200: Sapphire Substrate
201:N type layer
202: the luminous zone
203:P type layer
204: metallic reflector
205: current barrier layer
206: current extending
The 207:P electrode
The 208:N electrode
300: Sapphire Substrate
301:N type layer
302: the luminous zone
303:P type layer
304: metallic reflector
305: current barrier layer
306: current extending
The 307:P electrode
The 308:N electrode.
Embodiment
Below will combine accompanying drawing and embodiment to specify execution mode of the present invention, how the application technology means solve technical problem to the present invention whereby, and the implementation procedure of reaching technique effect can make much of and implement according to this.Need to prove that only otherwise constitute conflict, each embodiment among the present invention and each characteristic among each embodiment can mutually combine, formed technical scheme is all within protection scope of the present invention.
Embodiment one
Please referring to accompanying drawing 2, a kind of gallium nitride based light emitting diode comprises: Sapphire Substrate 200, N type layer 201, luminous zone 202, P type layer 203, metallic reflector 204, current barrier layer 205, current extending 206, P electrode 207 and N electrode 208.
Wherein, the bottom is a Sapphire Substrate 200; N type layer 201 is formed on the Sapphire Substrate 200; Luminous zone 202 is formed on the N type layer 201; P type layer 203 is formed on the luminous zone 202; Metallic reflector 204 is formed on the P type layer 201, and its material is generally selected the material of high reflectance, like aluminium (Al) or silver (Ag) or nickel (Ni), in a preferred embodiment of the invention, selects for use silver as metallic reflector; Current barrier layer 205 covers on the metallic reflector 204 fully, and its material can be selected silicon dioxide (SiO for use
2) or silicon nitride (SiN
x) or aluminium oxide (Al
2O
3), in a preferred embodiment of the present invention, select SiO for use
2As current barrier layer; Current extending 206; Be coated on fully on the current barrier layer 205; Its material can be selected a kind of or its combination in nickel/billon (Ni/Au) or nickel/tin indium oxide alloy (Ni/ITO) or tin indium oxide (ITO) or zinc oxide (ZnO) or In doping ZnO or Al doping ZnO or the Ga doping ZnO for use; In a preferred embodiment of the present invention, select for use ITO as current extending; P electrode 207 is formed on the current extending 206; N electrode 208 is formed on the exposed N type layer 201; Wherein metallic reflector 204 is positioned under the P electrode 207, and its lateral cross section is long-pending long-pending and long-pending less than current barrier layer 205 lateral cross section greater than P electrode 207 lateral cross section.
Above-mentioned gallium nitride based light emitting diode with metallic reflector structure, its manufacture method comprises step:
The first step: the luminous epitaxial loayer of epitaxial growth of gallium nitride base on Sapphire Substrate 200 comprises; N type layer 201, luminous zone 202, P type layer 203;
Second step: on P type layer 203,, form metallic reflector 204 through sputtering way, but its material aluminium (Al) or silver (Ag) or nickel (Ni);
The 3rd step: on metallic reflector 204, through the chemical vapour deposition (CVD) mode, form current barrier layer 205, and be coated on fully on the metallic reflector 204, its material can be selected silicon dioxide (SiO for use
2), silicon nitride (SiN
x) or aluminium oxide (Al
2O
3);
The 4th step: on current barrier layer 205,, form ITO current extending 206 through the vapor deposition mode, and intact
Be coated on entirely on the current barrier layer 205;
The 5th step:, making on the ITO current extending 206 with on the N type layer 201 that exposes respectively through light shield, etch process
Make P electrode 207 and N electrode 208.
Embodiment two
Please referring to accompanying drawing 3; Second preferred embodiment of light-emitting diode of the present invention and this first preferred embodiment are roughly the same; Different places are: metallic reflector 304 is wrapped up by current barrier layer 305 fully, metallic reflector material selection Ag, current barrier layer material selection aluminium oxide (Al
2O
3).
Above-mentioned gallium nitride based light emitting diode with metallic reflector structure, its manufacture method comprises step:
The first step: the luminous epitaxial loayer of epitaxial growth of gallium nitride base on Sapphire Substrate 300 comprises; N type layer 301, luminous zone 302, P type layer 303;
Second step: on P type layer 303,, form the current barrier layer bottom through the chemical vapour deposition (CVD) mode;
The 3rd step through sputtering way, formed metallic reflector 304 on the current barrier layer bottom, but its material aluminium (Al) or silver (Ag) or nickel (Ni);
The 4th step: continue through the chemical vapour deposition (CVD) mode, on metallic reflector 304, form current barrier layer top, so far current barrier layer 305 complete coated metal reflector 304;
The 5th step: on current barrier layer 305,, form ITO current extending 306, and be coated on fully on the current barrier layer 305 through the vapor deposition mode;
The 6th step:, making P electrode 307 and N electrode 308 on the ITO current extending 306 with on the N type layer 301 that exposes respectively through light shield, stripping technology.
Above-mentioned light-emitting diode adopts aluminium oxide (Al
2O
3) barrier layer parcel Ag metallic reflector, can overcome Ag and directly contact the bad problem of tack with the P-GaN layer, add aluminium oxide (Al
2O
3) barrier layer has transparent and nonconducting characteristic, can and then reduce light loss so that the light that sends from luminescent layer is avoided being absorbed by P electrode 307, the light that improves light-emitting diode takes out efficient.
Claims (10)
1. a gallium nitride based light emitting diode comprises: substrate; Epitaxial loayer is formed on this substrate, is made up of P type layer, luminous zone, N type layer; Metallic reflector is formed on the epitaxial loayer; Current barrier layer is formed on the epitaxial loayer, and coats said metallic reflector fully; Current extending is formed on the said current barrier layer, and the subregion contacts with said p type layer at least; The P electrode is formed on the said current extending; The N electrode is formed on the N type layer.
2. according to right 1 described a kind of gallium nitride based light emitting diode, it is characterized in that: said metallic reflector be positioned under the said P electrode and said metallic reflector lateral cross section long-pending to be greater than or equal to said P electrode lateral cross section long-pending and long-pending less than said current barrier layer lateral cross section.
3. according to right 1 described a kind of gallium nitride based light emitting diode, it is characterized in that: said current barrier layer wraps up said metallic reflector fully.
4. according to right 1 described a kind of gallium nitride based light emitting diode, it is characterized in that: said current barrier layer covers said metallic reflector fully.
5. according to right 1 described a kind of gallium nitride based light emitting diode, it is characterized in that: a kind of or its combination in material selection silicon dioxide, silicon nitride or the aluminium oxide of said current barrier layer.
6. according to right 1 described a kind of gallium nitride based light emitting diode, it is characterized in that: a kind of or its combination in the material selection nickel/billon of said current extending, nickel/tin indium oxide alloy, tin indium oxide, zinc oxide, In doping zinc-oxide, Al doping zinc-oxide, the Ga doping zinc-oxide.
7. the manufacture method of a gallium nitride based light emitting diode, its step is following:
1) substrate is provided, epitaxial growth epitaxial loayer above that, it comprises p type layer, luminous zone and n type layer from top to down;
2) on the subregion of said epitaxial loayer, form metallic reflector and current barrier layer light;
3) on said epitaxial loayer, form current barrier layer, it coats said metallic reflector fully;
4) on said current barrier layer, form current extending, it contacts with said p type layer the subregion at least;
5) making P electrode and N electrode on the said current extending with on the said N type layer respectively.
8. according to the manufacture method of right 7 described a kind of gallium nitride based light emitting diodes, it is characterized in that: the said metallic reflector of step 3) be positioned under the said P electrode and said metallic reflector lateral cross section long-pending to be greater than or equal to said P electrode lateral cross section long-pending but long-pending less than said current barrier layer lateral cross section.
9. the manufacture method of a gallium nitride based light emitting diode, its step is following:
1) substrate is provided, epitaxial growth epitaxial loayer above that, it comprises p type layer, luminous zone and n type layer from top to down;
2) at the formation current barrier layer of said epitaxial loayer, its internal package one metallic reflector;
3) on said current barrier layer, form current extending, it contacts with said p type layer the subregion at least;
4) making P electrode and N electrode on the said current extending with on the said N type layer respectively.
10. according to the manufacture method of right 9 described a kind of gallium nitride based light emitting diodes, it is characterized in that: the said metallic reflector of step 3) be positioned under the said P electrode and said metallic reflector lateral cross section long-pending to be greater than or equal to said P electrode lateral cross section long-pending but long-pending less than said current barrier layer lateral cross section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210183838XA CN102683540A (en) | 2012-06-06 | 2012-06-06 | Gallium-nitride-based light-emitting diode and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210183838XA CN102683540A (en) | 2012-06-06 | 2012-06-06 | Gallium-nitride-based light-emitting diode and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102683540A true CN102683540A (en) | 2012-09-19 |
Family
ID=46815176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210183838XA Pending CN102683540A (en) | 2012-06-06 | 2012-06-06 | Gallium-nitride-based light-emitting diode and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102683540A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903817A (en) * | 2012-10-31 | 2013-01-30 | 安徽三安光电有限公司 | Light emitting device with reflecting electrode |
| CN103094449A (en) * | 2013-01-23 | 2013-05-08 | 厦门市三安光电科技有限公司 | Gallium nitride-based light emitting diode and manufacturing method thereof |
| CN104064633A (en) * | 2013-03-22 | 2014-09-24 | 上海蓝光科技有限公司 | Production method for light emitting diodes |
| CN104134735A (en) * | 2013-05-03 | 2014-11-05 | 上海蓝光科技有限公司 | Light emitting diode chip structure |
| CN104576841A (en) * | 2013-10-22 | 2015-04-29 | 璨圆光电股份有限公司 | Semiconductor light emitting element and method for manufacturing the same |
| WO2015078916A1 (en) * | 2013-11-27 | 2015-06-04 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
| CN106057998A (en) * | 2016-08-10 | 2016-10-26 | 山东浪潮华光光电子股份有限公司 | GaAs-based light emitting diode chip possessing current blocking layer and current extension layer and manufacturing method thereof |
| CN106653986A (en) * | 2016-12-18 | 2017-05-10 | 佛山市国星半导体技术有限公司 | LED (Light Emitting Diode) chip with reflected current barrier layer and manufacturing method thereof |
| CN108963039A (en) * | 2018-07-30 | 2018-12-07 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial structure and preparation method thereof |
| CN109378372A (en) * | 2018-11-22 | 2019-02-22 | 圆融光电科技股份有限公司 | LED chip structure and preparation method thereof |
| CN110931619A (en) * | 2019-11-20 | 2020-03-27 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and manufacturing method thereof |
| CN108063154B (en) * | 2017-12-14 | 2020-04-10 | 安徽熙泰智能科技有限公司 | Silicon-based color OLED micro-display device and manufacturing method thereof |
| CN111304614A (en) * | 2020-03-31 | 2020-06-19 | 宁波瑞凌新能源科技有限公司 | Reflecting film, preparation method and application thereof |
| CN117525233A (en) * | 2024-01-05 | 2024-02-06 | 南昌凯迅光电股份有限公司 | Small-size red light LED chip and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1960092A (en) * | 2005-11-03 | 2007-05-09 | 三星电子株式会社 | Nitride semiconductor laser device and method of manufacturing the same |
| CN101064330A (en) * | 2006-04-26 | 2007-10-31 | 日本冲信息株式会社 | Composite semiconductor light emitting device, led head , and image forming apparatus |
| JP2008300719A (en) * | 2007-06-01 | 2008-12-11 | Nichia Corp | Semiconductor light emitting element and manufacturing method thereof |
| CN101859843A (en) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | Gallium nitride series light-emitting diode and manufacturing method thereof |
| CN201773863U (en) * | 2010-07-19 | 2011-03-23 | 亚威朗光电(中国)有限公司 | Transverse-structured LED chip |
| CN102074629A (en) * | 2010-12-16 | 2011-05-25 | 厦门市三安光电科技有限公司 | Light emitting diode with sandwich-type current blocking structure |
-
2012
- 2012-06-06 CN CN201210183838XA patent/CN102683540A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1960092A (en) * | 2005-11-03 | 2007-05-09 | 三星电子株式会社 | Nitride semiconductor laser device and method of manufacturing the same |
| CN101064330A (en) * | 2006-04-26 | 2007-10-31 | 日本冲信息株式会社 | Composite semiconductor light emitting device, led head , and image forming apparatus |
| JP2008300719A (en) * | 2007-06-01 | 2008-12-11 | Nichia Corp | Semiconductor light emitting element and manufacturing method thereof |
| CN101859843A (en) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | Gallium nitride series light-emitting diode and manufacturing method thereof |
| CN201773863U (en) * | 2010-07-19 | 2011-03-23 | 亚威朗光电(中国)有限公司 | Transverse-structured LED chip |
| CN102074629A (en) * | 2010-12-16 | 2011-05-25 | 厦门市三安光电科技有限公司 | Light emitting diode with sandwich-type current blocking structure |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903817B (en) * | 2012-10-31 | 2015-04-22 | 安徽三安光电有限公司 | Light emitting device with reflecting electrode |
| CN102903817A (en) * | 2012-10-31 | 2013-01-30 | 安徽三安光电有限公司 | Light emitting device with reflecting electrode |
| CN103094449A (en) * | 2013-01-23 | 2013-05-08 | 厦门市三安光电科技有限公司 | Gallium nitride-based light emitting diode and manufacturing method thereof |
| CN103094449B (en) * | 2013-01-23 | 2015-09-09 | 厦门市三安光电科技有限公司 | Gallium nitride based light emitting diode and preparation method thereof |
| CN104064633A (en) * | 2013-03-22 | 2014-09-24 | 上海蓝光科技有限公司 | Production method for light emitting diodes |
| CN104134735A (en) * | 2013-05-03 | 2014-11-05 | 上海蓝光科技有限公司 | Light emitting diode chip structure |
| CN104576841B (en) * | 2013-10-22 | 2017-08-08 | 晶元光电股份有限公司 | Semiconductor light emitting element and method for manufacturing the same |
| CN104576841A (en) * | 2013-10-22 | 2015-04-29 | 璨圆光电股份有限公司 | Semiconductor light emitting element and method for manufacturing the same |
| WO2015078916A1 (en) * | 2013-11-27 | 2015-06-04 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
| CN106057998A (en) * | 2016-08-10 | 2016-10-26 | 山东浪潮华光光电子股份有限公司 | GaAs-based light emitting diode chip possessing current blocking layer and current extension layer and manufacturing method thereof |
| CN106653986A (en) * | 2016-12-18 | 2017-05-10 | 佛山市国星半导体技术有限公司 | LED (Light Emitting Diode) chip with reflected current barrier layer and manufacturing method thereof |
| CN108063154B (en) * | 2017-12-14 | 2020-04-10 | 安徽熙泰智能科技有限公司 | Silicon-based color OLED micro-display device and manufacturing method thereof |
| CN108963039A (en) * | 2018-07-30 | 2018-12-07 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial structure and preparation method thereof |
| CN109378372A (en) * | 2018-11-22 | 2019-02-22 | 圆融光电科技股份有限公司 | LED chip structure and preparation method thereof |
| CN110931619A (en) * | 2019-11-20 | 2020-03-27 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and manufacturing method thereof |
| CN111304614A (en) * | 2020-03-31 | 2020-06-19 | 宁波瑞凌新能源科技有限公司 | Reflecting film, preparation method and application thereof |
| CN117525233A (en) * | 2024-01-05 | 2024-02-06 | 南昌凯迅光电股份有限公司 | Small-size red light LED chip and manufacturing method thereof |
| CN117525233B (en) * | 2024-01-05 | 2024-04-12 | 南昌凯迅光电股份有限公司 | Small-size red light LED chip and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102683540A (en) | Gallium-nitride-based light-emitting diode and manufacturing method thereof | |
| CN102931309B (en) | Inverted LED and manufacturing method thereof | |
| CN103489983B (en) | Flip-chip light emitting diode and manufacturing method and application thereof | |
| CN102456799B (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN102859726B (en) | Light-emitting diode and manufacture method thereof | |
| CN102130260B (en) | Luminous device and manufacturing method thereof | |
| US8384112B2 (en) | Light emitting chip | |
| CN102709421B (en) | GaN-based LED with dual reflecting layers | |
| CN101859861A (en) | GaN-based flip-chip light-emitting diode with double reflecting layers and preparation method thereof | |
| KR20050115078A (en) | Flip chip type nitride semiconductor light emitting diode | |
| CN103367590A (en) | Gallium nitride-based light-emitting diode and production method thereof | |
| KR20120006410A (en) | Light emitting device and method for menufacturing the same | |
| CN102709420A (en) | GaN-based LED | |
| US20120235114A1 (en) | Light emitting chip | |
| US20130221395A1 (en) | Optoelectronic device | |
| JP2013034010A (en) | Vertical light-emitting device | |
| CN103098239B (en) | Efficient LED | |
| JP4842102B2 (en) | Vertical structure gallium nitride based light emitting diode device | |
| KR100674875B1 (en) | Flip chip type light emitting device | |
| US8735923B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN208093585U (en) | Light emitting diode | |
| KR100661711B1 (en) | Nitride semiconductor light-emitting device with reflective electrode and manufacturing method thereof | |
| KR100886819B1 (en) | Reflector Electrode, Compound Semiconductor Light Emitting Device Including The Reflector Electrode And Method Of Manufacturing The Same | |
| CN108365056A (en) | A kind of light emitting diode with vertical structure and its manufacturing method | |
| CN101494266A (en) | Gallium nitride LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120919 |