KR100661711B1 - Nitride semiconductor light-emitting device with reflective electrode and manufacturing method thereof - Google Patents

Nitride semiconductor light-emitting device with reflective electrode and manufacturing method thereof Download PDF

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KR100661711B1
KR100661711B1 KR1020050080102A KR20050080102A KR100661711B1 KR 100661711 B1 KR100661711 B1 KR 100661711B1 KR 1020050080102 A KR1020050080102 A KR 1020050080102A KR 20050080102 A KR20050080102 A KR 20050080102A KR 100661711 B1 KR100661711 B1 KR 100661711B1
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South Korea
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layer
nitride semiconductor
emitting device
light emitting
semiconductor light
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KR1020050080102A
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Korean (ko)
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이상열
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엘지이노텍 주식회사
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials

Abstract

A nitride semiconductor light emitting device and its manufacturing method are provided to enhance a light emitting efficiency by reducing the absorption of the light generated from a nitride semiconductor using an improved reflective electrode structure composed of a transparent conductive oxide layer, an intermediate layer and a reflective layer. An N type nitride layer is formed on a substrate. An active layer(303) is formed on the N type nitride layer. A P type nitride layer(304) is formed on the active layer. A reflective electrode structure is formed on the P type nitride layer. The reflective electrode structure is composed of a transparent conductive oxide layer(305-3), an intermediate layer(305-2) on the transparent conductive oxide layer, and a reflective layer(305-1) on the intermediate layer.

Description

Nitride semiconductor light emitting device having a reflective electrode and a method for manufacturing the same

1A and 1B are cross-sectional views showing a cross section of a conventional nitride semiconductor light emitting device.

2A is a graph showing an operating voltage according to an aging treatment temperature of a conventional nitride semiconductor light emitting device.

3A is a cross-sectional view illustrating a nitride semiconductor light emitting device manufactured according to the present invention.

3B is an enlarged cross-sectional view illustrating a reflective electrode of a nitride semiconductor light emitting device manufactured according to the present invention;

Figure 4 is a graph comparing the reflectivity of the nitride semiconductor light emitting device having a reflective electrode and the conventional nitride semiconductor light emitting device having a reflective electrode according to the present invention.

5 is a graph for explaining the function of the current spreader (current spreader) of the nitride semiconductor light emitting device having a reflective electrode according to the present invention.

6 is a graph showing a comparison of operating voltages according to aging temperature of a nitride semiconductor light emitting device having a reflective electrode according to the present invention and a nitride semiconductor light emitting device having a conventional reflective electrode.

* Explanation of symbols for main parts of drawings *

301: N-electrode 302: n-GaN layer

303: active layer 304: p-GaN layer

305: reflective electrode 305-1: reflective layer

305-2: intermediate layer 305-3: transparent conductive oxide layer

306: submount

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device, and more particularly, to a nitride semiconductor light emitting device having a reflective electrode having reflective properties and excellent ohmic and bonding characteristics.

GaN-based nitride light emitting devices are typically grown on sapphire substrates or SiC substrates, and GaN-based polycrystalline layers are grown as buffer layers on sapphire substrates or SiC substrates at low growth temperatures. Let's do it.

Thereafter, a GaN layer without dopant doping, an n-type GaN layer doped with silicon, and the like are formed on the buffer layer at a high temperature. Next, a light emitting layer is formed on the n-type GaN-based layer, and a P-type GaN-based layer is further formed on the light-emitting layer to manufacture a light emitting device. In order to implement an optical device such as a light emitting device or a laser, first of all, a high quality ohmic contact formed between the semiconductor and the electrode must be made.

A nitride semiconductor light emitting device having a general flip-bond structure has a buffer layer 2, an n-GaN layer 3, an active layer 4, a p-GaN layer 5, and a reflection under the substrate 1 as shown in FIG. The electrodes 6 have a structure in which they are sequentially stacked. The nitride semiconductor light emitting device of the flip bonding structure having such a structure is located on the submount 9, and the nitride semiconductor light emitting device of this structure is supported on the submount 9 through an adhesive means, for example, a solder. do. Further, a P-electrode is formed under the reflective electrode 6, and an N-electrode is formed in the n-GaN layer 3.

Here, the material used to form the reflective electrode of the nitride semiconductor light emitting device of the conventional flip-bonding structure may be Al and Ag, for example, the material has a very high reflectance (reflectance) of more than 70% in the short wavelength region. .

FIG. 1B is a cross-sectional view illustrating a conventional vertical nitride semiconductor light emitting device, and includes a reflective electrode 15, a p-GaN layer 14, an active layer 13, and an n-GaN layer 12 on the submount 16. ) And a structure in which the N-electrodes 11 are laminated.

However, in the conventional nitride semiconductor light emitting device, the reflective electrode is provided in a structure including mostly Ag or Al. However, the reflective electrode using Ag or Al is difficult to form excellent ohmic contact with a p-GaN layer such as p- (In, Al) GaN, and is also very unstable thermally. In particular, in order to achieve high output in the light emitting device of the flip bonding structure, the chip area should be widened at least 0.5 mm 2 or more, and high heat is generated in the chip.

If the reflective electrode is thermally unstable, unwanted interaction occurs easily between the (In, Al) GaN layer and the electrode, which in most cases acts to degrade the electrical and optical properties of the device.

In particular, the reflective electrode is supposed to be responsible for the current supply from the outside to enter while having a high current injection efficiency uniformly into the device, if the contact resistance is increased to more than 10 -2 Ω㎠ power efficiency drops which As a result, high heat is generated on the contact surface, resulting in degeneration of the device.

Specifically, FIG. 2A is a graph illustrating a change in operating voltage of an LED according to an aging temperature in using the reflective electrode Al on a conventional transparent conductive oxide film ITO, and at a heat treatment temperature for each aging. Accordingly, a problem arises in that the operating voltage of the LED rises. The reason why the operating voltage of the transparent conductive oxide film and the reflective electrode changes is because the series resistance of the LED increases due to the reaction between the transparent conductive oxide film and the reflective electrode, thereby increasing the operating voltage.

In addition, as shown in FIG. 2B, when the ohmic bonding material is provided in the conventional reflective electrode and the reflectivity of the reflective electrode material such as Al, the Al reflective electrode is provided with the ohmic bonding material in the reflective electrode. Reflectivity is considerably higher. However, Al has excellent reflection characteristics, but since a material having a high light absorption between the nitride semiconductor and Al is used to improve ohmic characteristics according to the degradation of the ohmic characteristics with the nitride semiconductor, the reflection characteristics of the reflective electrode are deteriorated. .

In addition, in forming a material having excellent reflective properties on the transparent conductive oxide film, the bonding property between the transparent conductive oxide film and the reflective electrode is poor in terms of bonding properties and reactivity between the transparent conductive oxide film and the reflective material, and thus the filling of the reflective electrode By causing a peeling phenomenon, light emission does not occur.

An object of the present invention is to realize a nitride semiconductor having a reflective electrode having excellent ohmic and bonding characteristics.

Another object of the present invention is to improve the luminous efficiency of the reflective electrode by solving the peeling phenomenon of the reflective electrode and the increase in operating voltage due to aging.

The present invention for achieving the above object is a substrate; An n-type nitride layer formed on the substrate; An active layer formed on the n-type nitride layer; A p-type nitride layer formed on the active layer; And a reflective electrode including a transparent conductive oxide layer formed on the p-type nitride layer, an intermediate layer on the transparent conductive oxide layer, and a reflective layer on the intermediate layer.

The present invention also provides a transparent conductive oxide layer forming step of growing a transparent conductive oxide layer on the nitride layer of the nitride semiconductor light emitting device; An intermediate layer forming step of forming an intermediate layer on the transparent conductive oxide layer; And a reflective layer forming step of forming a reflective layer on the intermediate layer.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

The present invention provides a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer, and a reflective electrode, wherein the reflective electrode is formed on the n-type nitride semiconductor layer or the p-type nitride semiconductor layer. The present invention proposes a reflective electrode having a new configuration in which light generated in the active layer is reflected by a reflective electrode having reflective characteristics and emits light to the outside.

First, as shown in FIG. 3A, the reflective electrode 305, the p-GaN layer 304, the active layer 303 for emitting light, the n-GaN layer 302, and the N-electrode on the sub-mount 306. In the nitride semiconductor light emitting device in which 301 is sequentially formed, the present invention provides the reflective electrode 305 on the submount 306 with the reflective layer 305-1 and the intermediate layer 305-2 as shown in FIG. 3B. And a transparent conductive oxide film layer 305-3.

In the reflective electrode 305 having the reflective characteristic according to the present invention, the active layer 303 and the p-GaN layer 304 are sequentially formed on the n-GaN layer 302, and then the p-GaN layer of the nitride semiconductor ( A transparent conductive oxide film is grown on the 304 to form the transparent conductive oxide film layer 305-3.

The transparent conductive oxide layer 305-3 functions as a photon path and a current spreader, and has a function of maintaining a stable interface with other layers. In addition, the transparent conductive oxide layer 305-3 includes, for example, metal oxides of ZnO, RuO, NiO, CoO, and Indium-Tin-Oxide (ITO) using a method such as chemical vapor deposition (CVD). Can be formed, and preferably, a transparent conductive oxide film layer 305-3 made of ITO is formed.

After the transparent conductive oxide film layer 305-3 is formed, an intermediate layer 305-2 having excellent bonding properties with other layers is formed using, for example, an electron beam deposition method or a thermal vapor deposition method.

The intermediate layer 305-2 is formed of, for example, a material such as Ti, Cr, Ni, Ir, Ru, Pt, Pd, TiOx, NiOx, PtOx, PdOx, CrO, and is transparently formed by heat treatment to transmit light. Will increase.

Subsequently, a reflective layer 305-1 made of a reflective material is formed on the intermediate layer 305-2 according to the present invention.

The reflective material of the reflective layer 305-1 is a material having excellent reflection characteristics including Al, Ag, Rh, Pt, and the like. Since the reflective material is used in a nitride semiconductor having a flip bonding structure and a vertical structure, the reflective material has excellent flip bonding and adhesion properties. It is formed, and is deposited using a method such as electron beam deposition or thermal vapor deposition in the same manner as the intermediate layer 305-2.

Accordingly, by forming the reflective electrode with a material having excellent bonding and adhesiveness, the peeling phenomenon, which is a problem in the reflective electrode of the conventional transparent conductive oxide film and the reflective layer structure, is eliminated, that is, the phenomenon of the material forming the reflective layer is removed. .

In addition, the reflective layer 305-1 has a single layer structure of any one of the above-described reflective properties, and the above-described reflective materials include Au, Pt, Cr, Ti, Ni, Rh, Pd, and the like. A mixed layer or two or more laminated structures in which the materials are mixed in a predetermined molar ratio is formed.

Accordingly, the reflective electrode 305 has a thickness of, for example, 1 μm to 3 μm, and in the flip chip implementation, the reflective layer 305-1 of the reflective electrode 305 is bonded onto the submount 306. When implemented in a vertical nitride semiconductor light emitting device, the reflective layer 305-1 of the reflective electrode 305 may be directly bonded onto the wafer.

The reflective electrode 305 having such a configuration, for example, a reflective electrode composed of a transmissive oxide film, TiOx, and Al, forms an electrode having high reflectivity, as shown in the graph shown in FIG. 4, thereby reducing the absorption of light generated in the nitride semiconductor. As can be seen from FIG. 5, the reflective electrode composed of the transparent oxide film, TiOx, and Al according to the present invention is higher than the conventional reflective electrode in terms of the efficiency of the current with respect to the input forward voltage. can act as a spreader.

In addition, as can be seen from the graph of the operating voltage according to the aging temperature of the nitride semiconductor light emitting device having a reflective electrode (transparent oxide film + intermediate layer + reflective layer) according to the present invention of FIG. 6, regardless of the aging temperature Since the nitride semiconductor light emitting device having the reflective electrode performs an operation, it can be applied to an application requiring high reliability.

Although the technical spirit of the present invention has been described in detail according to the above-described preferred embodiment, it should be noted that the above-described embodiments are for the purpose of description and not of limitation.

Specifically, the present invention is described using an NP type semiconductor light emitting device as an example. However, the present invention is not limited thereto, and an N type nitride layer such as N-GaN having a thin thickness is formed between the NPN type structure, that is, the reflective electrode and the P type nitride layer. It can also be applied to a semiconductor light emitting device having a structure.

In addition, those skilled in the art will understand that various implementations are possible within the scope of the technical idea of the present invention.

As described above, the nitride semiconductor light emitting device including the reflective electrode according to the present invention has an advantage of improving luminous efficiency by forming an ohmic electrode having high reflectance, thereby reducing the absorption of light generated from the nitride semiconductor.

In addition, the present invention has the advantage of improving the reliability problem of the nitride semiconductor by solving the bonding and reactivity problems, such as peeling (peeling) that has been a problem in the conventional reflective electrode.

Claims (13)

  1. Board;
    An n-type nitride layer formed on the substrate;
    An active layer formed on the n-type nitride layer;
    A p-type nitride layer formed on the active layer; And
    And a reflective electrode including a transparent conductive oxide layer formed on the p-type nitride layer, an intermediate layer on the transparent conductive oxide layer, and a reflective layer on the intermediate layer.
  2. The method of claim 1,
    And a n-type nitride layer between the p-type nitride layer and the transparent conductive oxide layer.
  3. The method according to claim 1 or 2,
    The transparent conductive oxide layer is nitride semiconductor light emitting device, characterized in that formed of any one metal oxide selected from ZnO, RuO, NiO, CoO, and ITO (Indium-Tin-Oxide).
  4. The method according to claim 1 or 2,
    The intermediate layer is nitride semiconductor light emitting device, characterized in that formed of at least one material selected from Ti, Cr, Ni, Ir, Ru, Pt, Pd, TiOx, NiOx, PtOx, PdOx, CrO.
  5. The method of claim 4, wherein
    The intermediate layer is nitride semiconductor light emitting device, characterized in that formed through the heat treatment transparent.
  6. The method according to claim 1 or 2,
    The reflective layer is nitride semiconductor light emitting device, characterized in that formed of any one material selected from Al, Ag, Rh, Pt.
  7. The method of claim 6,
    The reflective layer is a mixed layer in which at least one material selected from Au, Pt, Cr, Ti, Ni, Rh, and Pd is mixed with any one material selected from Al, Ag, Rh, and Pt in a predetermined molar ratio. Nitride semiconductor light emitting device.
  8. A transparent conductive oxide layer forming step of growing a transparent conductive oxide layer on the nitride layer of the nitride semiconductor light emitting device;
    An intermediate layer forming step of forming an intermediate layer on the transparent conductive oxide layer; And
    A reflective layer forming step of forming a reflective layer on the intermediate layer
    Method for manufacturing a reflective electrode of a nitride semiconductor light emitting device comprising a.
  9. The method of claim 8,
    The transparent conductive oxide layer forming step is ZnO, RuO, NiO, CoO, ITO (Indium-Tin-Oxide) is a method of manufacturing a reflective electrode of a nitride semiconductor light emitting device, characterized in that using a metal oxide selected from any one of.
  10. The method of claim 8,
    The intermediate layer forming step is formed by using at least one material selected from among Ti, Cr, Ni, Ir, Ru, Pt, Pd, TiOx, NiOx, PtOx, PdOx, CrO. Electrode manufacturing method.
  11. The method of claim 8,
    The forming of the intermediate layer may further include forming the intermediate layer transparently through heat treatment.
  12. The method of claim 8,
    The forming of the reflective layer is a method of manufacturing a reflective electrode of a nitride semiconductor light emitting device, characterized in that using any one material selected from Al, Ag, Rh, Pt.
  13. The method of claim 8,
    The reflective layer forming step may further include a mixing step of mixing at least one material selected from among Au, Pt, Cr, Ti, Ni, Rh, and Pd in a predetermined molar ratio to any one material selected from Al, Ag, Rh, and Pt. Method for manufacturing a reflective electrode of a nitride semiconductor light emitting device comprising a.
KR1020050080102A 2005-08-30 2005-08-30 Nitride semiconductor light-emitting device with reflective electrode and manufacturing method thereof KR100661711B1 (en)

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PCT/KR2006/003392 WO2007027035A1 (en) 2005-08-30 2006-08-29 Nitride semiconductor light-emitting device and manufacturing method thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008078893A1 (en) * 2006-12-26 2008-07-03 Lg Innotek Co., Ltd Semiconductor light emitting device

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FI122622B (en) * 2009-06-05 2012-04-30 Optogan Oy Light-emitting semiconductor device and method of manufacture
JP6056150B2 (en) * 2011-04-08 2017-01-11 日亜化学工業株式会社 Semiconductor light emitting device
EP2674992A1 (en) 2012-06-15 2013-12-18 Imec Led and method for making led

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* Cited by examiner, † Cited by third party
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KR100571816B1 (en) * 2003-09-08 2006-04-17 광주과학기술원 light emitting device and method of manufacturing the same
KR100647279B1 (en) * 2003-11-14 2006-11-17 광주과학기술원 light emitting device and method of manufacturing thereof
KR100624416B1 (en) * 2003-12-23 2006-09-18 광주과학기술원 flip-chip light emitting diodes and method of manufacturing thereof
KR100580634B1 (en) * 2003-12-24 2006-05-16 광주과학기술원 light emitting device and method of manufacturing thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008078893A1 (en) * 2006-12-26 2008-07-03 Lg Innotek Co., Ltd Semiconductor light emitting device
US9054258B2 (en) 2006-12-26 2015-06-09 Lg Innotek Co., Ltd. Semiconductor light emitting device
US9356197B2 (en) 2006-12-26 2016-05-31 Lg Innotek Co., Ltd. Semiconductor light emitting device

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