CN109378372A - LED chip structure and preparation method thereof - Google Patents
LED chip structure and preparation method thereof Download PDFInfo
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- CN109378372A CN109378372A CN201811397647.7A CN201811397647A CN109378372A CN 109378372 A CN109378372 A CN 109378372A CN 201811397647 A CN201811397647 A CN 201811397647A CN 109378372 A CN109378372 A CN 109378372A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 206
- 239000002184 metal Substances 0.000 claims abstract description 206
- 230000004888 barrier function Effects 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 366
- 238000002310 reflectometry Methods 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 239000011247 coating layer Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 11
- 239000001301 oxygen Substances 0.000 abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 7
- 239000005864 Sulphur Substances 0.000 abstract description 7
- 230000004927 fusion Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 239000000356 contaminant Substances 0.000 abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 23
- 239000011651 chromium Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 21
- 239000010931 gold Substances 0.000 description 19
- 229910052759 nickel Inorganic materials 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
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- 238000007740 vapor deposition Methods 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of LED chip structure and preparation method thereof, and LED chip structure includes the substrate set gradually from the bottom up, epitaxial layer, reflective metal layer, current barrier layer, transparency conducting layer and metal electrode layer, and current barrier layer coats reflective metal layer；Current barrier layer part is located on epitaxial layer.This structure is that the reflective metal layer in reflection electrode layer is transplanted in current barrier layer, so that a front surface and a side surface of reflective metal layer is all wrapped in current barrier layer, to completely cut off the intrusion of introduced contaminants, reflective metal layer is avoided to contact with oxygen element, element sulphur, it prevents from being oxidized, simultaneously, in chip fabrication processes, when high temperature fusion transparency conducting layer, since reflective metal layer does not contact directly with transparency conducting layer, electric current is not had by reflective metal layer, and reflective metal layer will not actively generate heat, and then improve the stability of LED chip structure.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED chip structure and preparation method thereof.
Background technique
LED (Light Emitting Diode) chip is a kind of solid state semiconductor devices, is improved out with some
The chip structure of light efficiency: current barrier layer and metal reflecting electrode layer etc..The effect of current barrier layer is by transparent insulation
Film layer place mat flows the metal electrode of injection effect in the following, getting around metal electrode contact area when electric current can be made to inject in electrification, subtracts
Few absorption of the metal electrode to light, and metal reflecting electrode layer is that had on epitaxial wafer contact surface using one kind in metal electrode
The metal layer of high reflectance is conducive to for the visible light being emitted from metal electrode being reflected back again inside chip, by secondary
Reflection or multiple reflections from other not extinction region be emitted, prevent light from being absorbed by metal electrode.But metallic reflection is electric
Pole layer is applied and has a kind of defect in LED chip structure, such as reflective metal layer is generally Al, the high-reflectivity metals such as Ag, this
Metalloid chemical property is more active, is easy and oxygen element, element sulphur react and destroy the reflectivity and electric conductivity of metal,
The adhesiveness of abutted surface therewith can even be destroyed.
A kind of existing solution is that one layer of very thin gold is added between metal reflecting electrode layer and transparency conducting layer
Belong to separation layer, such as chromium, nickel, titanium etc..
But this mode can significantly affect the reflectivity of metal reflecting electrode layer, reduce the effect of reflecting electrode.
Summary of the invention
The present invention provides a kind of LED chip structure and preparation method thereof, improves the stability of metal reflecting electrode layer.
The present invention provides a kind of LED chip structure, including the substrate, epitaxial layer, reflective metals set gradually from the bottom up
Layer, current barrier layer, transparency conducting layer and metal electrode layer, the current barrier layer coat the reflective metal layer.
As a kind of optional mode, LED chip structure provided by the invention,
The current barrier layer part is located on the epitaxial layer.
As a kind of optional mode, LED chip structure provided by the invention,
It further include coat of metal, the coat of metal is covered on the reflective metal layer, the coat of metal
Between the current barrier layer and the reflective metal layer.
As a kind of optional mode, LED chip structure provided by the invention,
The transparency conducting layer coats the current barrier layer, and the transparency conducting layer part is located on the epitaxial layer.
As a kind of optional mode, LED chip structure provided by the invention,
The reflective metal layer is single-layer metal or multiple layer metal.
As a kind of optional mode, LED chip structure provided by the invention,
The material of the reflective metal layer is aluminium and/or silver.
As a kind of optional mode, LED chip structure provided by the invention,
The contact surface of the reflective metal layer and the epitaxial layer is not less than the reflectivity of 440-470nm wave band
90%.
As a kind of optional mode, LED chip structure provided by the invention,
The transparency conducting layer with a thickness of 60nm-230nm.
As a kind of optional mode, LED chip structure provided by the invention,
The edge of the current barrier layer extends outwardly 10-15 μm relative to the reflective metal layer.
The present invention also provides a kind of production methods of LED chip structure, comprising:
Epitaxial layer is formed on the substrate；
Reflective metal layer is formed on said epitaxial layer there；
Current barrier layer is formed on said epitaxial layer there, and the current barrier layer coats the reflective metal layer；
Transparency conducting layer and metal electrode layer are set gradually on the current barrier layer.
The embodiment of the present invention provides a kind of LED chip structure and preparation method thereof, including the lining set gradually from the bottom up
Bottom, epitaxial layer, reflective metal layer, current barrier layer, transparency conducting layer and metal electrode layer, described in current barrier layer cladding
Reflective metal layer；Current barrier layer part is located on epitaxial layer.This structure is to move the reflective metal layer in reflection electrode layer
It plants in current barrier layer, so that a front surface and a side surface of reflective metal layer is all wrapped in current barrier layer, to completely cut off the external world
The intrusion of impurity avoids reflective metal layer from contacting with oxygen element, element sulphur, prevents from being oxidized, meanwhile, in chip fabrication processes
In, when high temperature fusion transparency conducting layer, since reflective metal layer does not contact directly with transparency conducting layer, electric current is not had and is passed through
Reflective metal layer, reflective metal layer will not actively generate heat, and then improve the stability of LED chip structure, such structure
LED chip, can the light below reflecting electrode be allowed to not spread Injection Current by Metal absorption and effectively to reach and mention
The purpose of high current uniformity, the effect of the two can improve the extraction efficiency of light, increase brightness, and metallic reflector is not involved in
Conduction will not actively generate heat, improve a lot to the reliability tool of reflecting electrode.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of LED chip structure in the prior art；
Fig. 2 is the structural schematic diagram for the LED chip structure that the embodiment of the present invention one provides；
Fig. 3 is the production flow diagram of LED chip structure provided by Embodiment 2 of the present invention.
Description of symbols:
101-epitaxial layers；
102-current barrier layers；
103-transparency conducting layers；
104-metallic spacers；
105-reflection electrode layers；
201-epitaxial layers；
202-reflective metal layers；
203-current barrier layers；
204-transparency conducting layers；
205-metal electrode layers；
206-coat of metal.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the preferred embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention is further described in more detail.In the accompanying drawings, identical from beginning to end or
Similar label indicates same or similar component or component with the same or similar functions.Described embodiment is this hair
Bright a part of the embodiment, instead of all the embodiments.The embodiments described below with reference to the accompanying drawings are exemplary, it is intended to
It is used to explain the present invention, and is not considered as limiting the invention.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
The embodiment of the present invention is described in detail with reference to the accompanying drawing.
Light emitting diode (English is Light Emitting Diode, abbreviation LED) is electroluminescent using the P-N junction of semiconductor
A kind of light emitting semiconductor device made of principle of luminosity.LED is with pollution-free, brightness is high, small power consumption, service life length, operating voltage
The advantages that low, easy miniaturization.Since the 1990s, gallium nitride (GaN) base LED was succeeded in developing, with research it is continuous into
Exhibition, light emission luminance are also continuously improved, and application field is also increasingly wider.
Semiconductor material of the GaN material as direct band gap has highly thermally conductive, high rigidity, high chemical stability and height electricity
The characteristics such as conductance.There is huge application potential in terms of solid state lighting, optical information technology.Present GaN material growth and core
Piece production method is main are as follows: growth includes U-GaN layers on a sapphire substrate, and N-GaN layers, multiple quantum well layer, P-GaN layers are tied
Structure, then producing P, the electrode of the pole N, then the method by cutting by semiconductor processing method in this structure will be single
Chip is separated, and individual devices are become.
The possessed chip structure for improving light extraction efficiency are as follows: current barrier layer, metal reflecting electrode layer and roughing in surface
Layer etc., the effect of current barrier layer be by transparent insulating film layer place mat electrification stream injection effect metal electrode layer in the following,
Metal electrode contact area is got around when electric current can be made to inject, and reduces absorption of the metal electrode to light, and reflection electrode layer is in gold
Belong to and use a kind of metal layer with high reflectivity on electrode and epitaxial layer contact surface, is conducive to the outgoing from metal electrode
Visible light is reflected back again inside chip, is emitted, is prevented from the region of other not extinctions by secondary reflection or multiple reflections
Light is absorbed by metal electrode.
But reflection electrode layer is applied a kind of defect in LED chip structure, such as the reflection inside reflection electrode layer
Metal layer is generally aluminium, and the high-reflectivity metals such as silver, this kind of metal chemistry is more active, is easy and oxygen element, element sulphur
The reflectivity and electric conductivity of metal are reacted and destroyed, or even the adhesiveness in the face of contacting therewith can be destroyed, in LED chip knot
In structure, reflecting layer metal is in contact with transparency conducting layer, Injection Current is penetrated transparency conducting layer, electric current is in transparency conducting layer
Middle diffusion is further transferred in gallium nitride material.However, usually containing some active oxygen members in transparency conducting layer film layer
Element, and some other impurity of absorption are easy, the chip fever in the high annealing and use in LED chip manufacture craft,
The oxygen element and other impurities element that will cause electrically conducting transparent layer film enter in reflective metal layer, and then destroy reflection gold
Belong to the effect of layer and injures the performance of LED chip.
For this purpose, the prior art proposes a solution, it is added between reflective metal layer and transparency conducting layer very thin
One layer of metallic spacer, Fig. 1 is the structural schematic diagram of LED chip structure in the prior art, as shown in Figure 1, existing offer
In LED chip structure, including substrate (not shown), the epitaxial layer 101, the current barrier layer that are stacked from lower to upper on substrate
102, transparency conducting layer 103, metallic spacer 104 and reflection electrode layer 105, metallic spacer 104 therein use chromium, nickel,
Transparency conducting layer 103 and reflection electrode layer 105 are kept apart by metallic spacer 104, avoid electrically conducting transparent by the metals such as titanium
Layer the inside oxygen element and reflective metal layer inside high-reflectivity metal occur chemical reaction and destroy carry out reflectivity and
Conductivity.
However the addition of metallic spacer will affect the reflectivity of reflective metal layer instead, reduce the work of reflecting electrode
With.
Based on this, the embodiment of the invention provides a kind of LED chip structures, will be carried out below by different embodiments detailed
Thin description.
Embodiment one
Fig. 2 is the structural schematic diagram for the LED chip structure that the embodiment of the present invention one provides, as shown in Fig. 2, the present invention provides
A kind of LED chip structure, including set gradually from the bottom up substrate (not shown), epitaxial layer 201, reflective metal layer
202, current barrier layer 203, transparency conducting layer 204 and metal electrode layer 205, current barrier layer 203 coat reflective metal layer
202。
This structure is that the reflective metal layer 202 in reflection electrode layer is transplanted in current barrier layer 203, so that reflection
A front surface and a side surface of metal layer 202 is all wrapped in current barrier layer 203, to completely cut off the intrusion of introduced contaminants, avoids reflecting
Metal layer 202 is contacted with oxygen element, element sulphur, prevents from being oxidized, meanwhile, in chip fabrication processes, high temperature fusion is transparent to be led
When electric layer 204, since reflective metal layer 202 does not contact directly with transparency conducting layer 204, electric current is not had and passes through reflective metals
Layer 202, reflective metal layer 202 will not actively generate heat, and then improve the stability of LED chip structure.
Optionally, current barrier layer part is located on epitaxial layer, so that current barrier layer is from side wrap reflective metals
Layer 202.
It further, further include coat of metal 206, coat of metal 206 is covered on reflective metal layer 202, metal
For protective layer 206 between current barrier layer 203 and reflective metal layer 202, the effect of coat of metal 206 is to prevent reflection gold
Belong to layer 202 and current barrier layer 203 interacts, because current barrier layer 203 is by silica, silicon nitride and three oxygen
Change the insulating film of the elements such as two aluminium composition, these films generally have oxonium ion or ion cluster to participate in, meeting during production
Reflective metal layer is destroyed, the addition of coat of metal 206 can further improve LED chip structure to avoid such destruction
Luminous efficiency.
Transparency conducting layer 204 coats current barrier layer 203, and 204 part of transparency conducting layer is located on epitaxial layer 201.
Transparency conducting layer 204 is that one kind can be conductive again in visible-range with the film of high transparency rate, effect
It is that the electric current that will be injected carries out horizontal proliferation, to realize uniformly light-emitting.
Further, the thickness of current barrier layer 203 is greater than the thickness of reflective metal layer 202, is conducive to so completely
Wrap up the side of reflective metal layer 202.
Optionally, the thickness range of current barrier layer 203 is between 100-200nm, and reflective metal layer 202 is to guarantee tool
There is high reflectivity, thickness should be greater than 100nm.
Optionally, reflective metal layer 202 is single-layer metal or multiple layer metal.
Further, reflective metal layer 202 is to visible light single-layer metal with high reflectivity or multiple layer metal.
Optionally, in the present embodiment, the material of reflective metal layer 202 is aluminium and/or silver, and aluminium and silver have height to visible light
Reflectivity.
Optionally, for reflective metal layer 202, the contact surface of reflective metal layer 202 and epitaxial layer 201 needs to be pair
It is not less than 90% high-reflectivity metal in the reflectivity of 440nm-470nm wave band, the effect of other metal layers can be protection
High-reflectivity metal either enhances the adhesiveness with current barrier layer.
Optionally, transparency conducting layer with a thickness of 60nm-230nm, and not for the transmissivity of 440nm-470nm wave band
Less than 90%.
Optionally, one in the material selection silica of current barrier layer 203, silicon nitride, alchlor or aluminium nitride
Kind or combinations thereof, shape is identical as reflective metal layer 202, and graphic edge extends outwardly 10-15 μm, so that current barrier layer 203
The figure of reflective metal layer 202 can be completely covered, not will receive during the high temperature fusion of subsequent transparency conducting layer 204
The destruction of high temperature and influence its reflectivity.
Metal electrode layer 205 selects the metal with reflecting effect and/or the metal without reflecting effect, because of reflection
The reflective metal layer 202 of electrode has been transplanted to current barrier layer 203, and the reflecting effect of entire LED chip is guaranteed, institute
Can not have reflecting effect with metal electrode layer 205, but from the cost consideration of material, metal electrode layer 205 can also be answered
With Al etc. there is the metal of reflecting effect the noble metals such as Au to be replaced to make it have reflecting effect.
The embodiment of the present invention provides a kind of LED chip structure, including the substrate, epitaxial layer, anti-set gradually from the bottom up
Metal layer, current barrier layer, transparency conducting layer and metal electrode layer are penetrated, the current barrier layer coats the reflective metal layer；
Current barrier layer part is located on epitaxial layer.This structure is that the reflective metal layer in reflection electrode layer is transplanted to current blocking
In layer, so that a front surface and a side surface of reflective metal layer is all wrapped in current barrier layer, to completely cut off the intrusion of introduced contaminants, keep away
Exempt from reflective metal layer to contact with oxygen element, element sulphur, prevents from being oxidized, meanwhile, in chip fabrication processes, high temperature fusion is transparent
When conductive layer, since reflective metal layer does not contact directly with transparency conducting layer, electric current is not had and passes through reflective metal layer, reflection
Metal layer will not actively generate heat, and then improve the stability of LED chip structure, and the LED chip of such structure can be anti-
The extremely following light of radio is allowed to not by Metal absorption, and can effectively be spread Injection Current and be reached the mesh for improving current flow uniformity
, the effect of the two can improve the extraction efficiency of light, increase brightness, and metallic reflector is not involved in conduction and will not actively generate
Heat improves a lot to the reliability tool of reflecting electrode.
Embodiment two
Fig. 3 is the production flow diagram of LED chip structure provided by Embodiment 2 of the present invention, as shown in figure 3, the present invention is implemented
The production method for the LED chip structure that example two provides, comprising:
Epitaxial layer 201 is formed on the substrate；
Reflective metal layer 202 is formed on epitaxial layer 201；
Current barrier layer 203 is formed on epitaxial layer 201, and current barrier layer 203 coats reflective metal layer 202；
Transparency conducting layer 204 and metal electrode layer 205 are set gradually on current barrier layer 203.
Wherein, the bottom is Sapphire Substrate, and epitaxial layer 201 includes P-type layer, luminous zone and N-type layer, N-type layer formed with
In Sapphire Substrate；Luminous zone is formed in N-type layer；P-type layer is formed on luminous zone；P- is formed between N-type layer and P-type layer
N step is used to form reflective metal layer 202 above P-type layer, and the material of reflective metal layer 202 is typically chosen high reflectance
Material.Current barrier layer 203 is completely covered on reflective metal layer 202, and silica or silicon nitride or three can be selected in material
Al 2 O etc.；Transparency conducting layer 204 is coated on completely on current barrier layer 203；Metal electrode layer 205 is formed in transparent lead
On electric layer 204.
Optionally, coat of metal 206 is formed on reflective metal layer 202, and coat of metal 206 is located at current barrier layer
Between 203 and reflective metal layer 202, coat of metal, which plays, to be prevented between reflective metal layer 202 and current barrier layer 203 mutually
The effect that the case where acting on, reflective metal layer reflectivity is caused to reduce occurs.
Optionally, reflective metal layer 202 is located at the underface of metal electrode layer 205, the transversal cross-section of reflective metal layer 202
Product is greater than the lateral cross-sectional area of metal electrode layer 205 and is less than the lateral cross-sectional area of current barrier layer 203.
Above-mentioned LED chip structure, making step include:
Step 1: epitaxial growth of gallium nitride base light emitting epitaxial layer 201 on a sapphire substrate, including N-type layer, luminous zone and
P-type layer；
Step 2: going out P-N platform using dry etching after the epitaxial layer 201 grown is cleaned；
Step 3: in P-type layer, one layer of reflective metal layer 202 of sputtering or vapor deposition, it may include single-layer metal or multilayer
Metal, and the face contacted with epitaxial layer needs to select high-reflectivity metal, aluminium (Al) or silver-colored (Ag) can be selected in material；
Step 4: a protective layer is deposited on reflective metal layer 202, coat of metal 206 is formed, it is anti-for protecting
Penetrate metal layer 202；
Step 5: depositing one layer of insulation and transparent nitrogen by way of chemical vapor deposition on coat of metal 206
Oxide skin(coating), i.e. current barrier layer 203, it is consistent with 202 form of reflective metal layer to make forming shape in the way of etching, figure
Edge extends outwardly 10-15 μm, reflective metal layer is completely covered；
Step 6: on current barrier layer 203, vapor deposition or sputtering layer of transparent conductive layer 204 utilize the method for etching
Current extending is produced, and is coated on current barrier layer 203 completely；
Step 7: vapor deposition one layer or multiple layer metal, to make metal electrode layer 205, can have reflecting effect can also
Not have reflecting effect.
According to the size and material of different LED chip structures, to obtain different brightness, this part will be by different
Assembled scheme is described in detail, and specifically includes:
Scheme one:
1. epitaxial layer 201 is formed on the substrate, after cleaning epitaxial layer 201, go out P-N step, chip ruler using dry etching
Very little is 12 × 12mil.
It is Al and Cr respectively 2. double layer of metal is deposited, the thickness of Al and Cr are respectively 100nm and 10nm, and Al is reflection gold
Belong to layer 202 and 201 surface contact layer of epitaxial layer, Cr is protective layer, produces corresponding figure in the way of etching either removing
Shape.
3. depositing one layer of SiO2 film, respective graphical is obtained in the way of etching, figure covers all reflective metals
Layer 202 forms 203 structure of current barrier layer, and extends outwardly 12 μm.
4. vapor deposition or sputtering layer of transparent conductive layer 204, obtain corresponding figure in the way of etching.
5. it is Cr, Ni, Au that three-layer metal, which is deposited, the thickness of Cr, Ni, Au are respectively 20nm, 100nm, 1000nm, as core
The metal electrode layer 205 of piece, wherein Cr is contacted with transparency conducting layer 204, and corresponding figure is obtained in the way of removing, figure
Shape shape size position and reflective metal layer 202 are completely the same.
6. after chip thinning is cut, carrying out surface mount device (Surface Mounted Devices, SMD) 2835
It is higher than the chip of regular reflection electrode by 2% or so that chip brightness is tested after encapsulation.
Scheme two:
1. going out P-N step, chip size 12*12mil using dry etching after cleaning epitaxial layer.
It is Al and Cr respectively 2. double layer of metal is deposited, the thickness of Al and Cr are respectively 100nm and 10nm, and Al is reflection gold
Belong to layer 202 to contact with 201 surface of epitaxial layer, Cr is protective layer, produces respective graphical in the way of etching either removing.
3. depositing layer of sin film, respective graphical is obtained in the way of etching, figure covers all reflective metal layer
202 form 203 structure of current barrier layer, and extend outwardly 12 μm.
4. vapor deposition or sputtering layer of transparent conductive layer 204, obtain corresponding figure in the way of etching.
5. it is Cr, Ni, Au that three-layer metal, which is deposited, the thickness of Cr, Ni, Au are respectively 20nm, and 100nm, 2000nm is as core
The metal electrode layer 205 of piece, wherein Cr is contacted with transparency conducting layer 204, and corresponding figure is obtained in the way of removing, figure
Shape shape size position and reflective metal layer 202 are completely the same.
6. after chip thinning is cut, testing chip of the chip brightness than regular reflection electrode after carrying out SMD3535 encapsulation
It is high by 3% or so.
Scheme three:
1. going out P-N step, chip size 32*32mil using dry etching after cleaning epitaxial layer.
It is Ag and Ni respectively 2. double layer of metal is deposited, the thickness of Ag and Ni are respectively 100nm and 10nm, and Ag is reflection gold
Belong to layer 202 to contact with 201 surface of epitaxial layer, Ni is protective layer, produces respective graphical in the way of etching either removing.
3. depositing one layer of SiO2 film, respective graphical is obtained in the way of etching, figure covers all reflective metals
Layer 202 forms 203 structure of current barrier layer, and the 15um that extends outwardly.
4. vapor deposition or sputtering layer of transparent conductive layer 204, obtain corresponding figure in the way of etching.
5. it is Cr, Ni, Au that three-layer metal, which is deposited, the thickness of Cr, Ni, Au are respectively 20nm, and 100nm, 2000nm is as core
The metal electrode layer 205 of piece, wherein Cr is contacted with transparency conducting layer 204, and corresponding figure is obtained in the way of removing, figure
Shape shape size position and reflective metal layer 202 are completely the same.
6. after chip thinning is cut, testing chip of the chip brightness than regular reflection electrode after carrying out SMD5050 encapsulation
It is high by 3% or so.
Scheme four:
1. going out P-N step, chip size 32*32mil using dry etching after cleaning epitaxial layer.
It is Ag and Ni respectively 2. double layer of metal is deposited, the thickness of Ag and Ni are respectively 100nm and 10nm, and Ag is reflection gold
Belong to layer 202 to contact with 201 surface of epitaxial layer, Ni is protective layer, produces respective graphical in the way of etching either removing.
3. depositing layer of sin film, respective graphical is obtained in the way of etching, figure covers all reflective metal layer
202 form 203 structure of current barrier layer, and extend outwardly 15 μm.
4. vapor deposition or sputtering layer of transparent conductive layer 204, obtain corresponding figure in the way of etching.
5. it is Cr, Ni, Au that three-layer metal, which is deposited, the thickness of Cr, Ni, Au are respectively 20nm, and 100nm, 2000nm is as core
The metal electrode layer 205 of piece, wherein Cr is contacted with transparency conducting layer 204, and corresponding figure is obtained in the way of removing, figure
Shape shape size position and metallic reflector are completely the same.
6. after chip thinning is cut, testing chip of the chip brightness than regular reflection electrode after carrying out SMD5050 encapsulation
It is high by 3% or so.
Scheme five:
1. going out P-N step, chip size 45*45mil using dry etching after cleaning epitaxial layer.
It is Ag and Ni respectively 2. double layer of metal is deposited, the thickness of Ag and Ni are respectively 100nm and 10nm, and Ag is reflection gold
Belong to layer 202 to contact with 201 surface of epitaxial layer, Ni is protective layer, produces respective graphical in the way of etching or removing.
3. depositing layer of sin film, respective graphical is obtained in the way of etching, figure covers all reflective metal layer
202 form 203 structure of current barrier layer, and extend outwardly 15 μm.
4. vapor deposition or sputtering layer of transparent conductive layer 204, obtain corresponding figure in the way of etching.
5. four layers of metal of vapor deposition are Cr, Al, Ni, Al, the thickness of Cr, Al, Ni, Al be respectively 1nm, 120nm, 100nm,
2000nm, as the metal electrode layer 205 of chip, material of main part Al therein is divided to two sections of vapor depositions, can guarantee metal watch in this way
Face does not have defect, and corresponding figure, graphics shape size position and reflective metal layer 202 complete one are obtained in the way of removing
It causes.Au is replaced both to save cost using Al, and electrode surface also has reflex and some packed devices can be reflected back
The light of chip reflects away again, improves light extraction efficiency.
6. after chip thinning is cut, testing chip of the chip brightness than regular reflection electrode after carrying out SMD5050 encapsulation
It is high by 4% or so.
The manufacturing method of LED chip structure provided by Embodiment 2 of the present invention, including sequentially form from the bottom up substrate,
Epitaxial layer, reflective metal layer, current barrier layer, transparency conducting layer and metal electrode layer, current barrier layer coat reflective metal layer；
Current barrier layer part is located on epitaxial layer.This structure is that the reflective metal layer in reflection electrode layer is transplanted to current blocking
In layer, so that a front surface and a side surface of reflective metal layer is all wrapped in current barrier layer, to completely cut off the intrusion of introduced contaminants, keep away
Exempt from reflective metal layer to contact with oxygen element, element sulphur, prevents from being oxidized, meanwhile, in chip fabrication processes, high temperature fusion is transparent
When conductive layer, since reflective metal layer does not contact directly with transparency conducting layer, electric current is not had and passes through reflective metal layer, reflection
Metal layer will not actively generate heat, and then improve the stability of LED chip structure, and the LED chip of such structure can be anti-
The extremely following light of radio is allowed to not by Metal absorption, and can effectively be spread Injection Current and be reached the mesh for improving current flow uniformity
, the effect of the two can improve the extraction efficiency of light, increase brightness, and metallic reflector is not involved in conduction and will not actively generate
Heat improves a lot to the reliability tool of reflecting electrode.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, there is no the portion being described in detail in some embodiment
Point, reference can be made to the related descriptions of other embodiments.
In the instructions provided here, numerous specific details are set forth.It is to be appreciated, however, that implementation of the invention
Example can be practiced without these specific details.In some instances, well known structure and skill is not been shown in detail
Art, so as not to obscure the understanding of this specification.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and ability
Field technique personnel can be designed alternative embodiment without departing from the scope of the appended claims.In the claims,
Any reference symbol between parentheses should not be configured to limitations on claims.Word "comprising" does not exclude the presence of not
Component or component listed in the claims.Word "a" or "an" before component or component does not exclude the presence of multiple
Such component or component.The present invention can be realized by means of including the device of several different components.It is several listing
In the claim of component, several in these components, which can be through the same component item, to be embodied.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.Any simple modification, equivalent change and modification to the above embodiments according to the technical essence of the invention,
All of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of LED chip structure, which is characterized in that including the substrate, epitaxial layer, reflective metals set gradually from the bottom up
Layer, current barrier layer, transparency conducting layer and metal electrode layer, the current barrier layer coat the reflective metal layer.
2. LED chip structure according to claim 1, which is characterized in that the current barrier layer part is located at described outer
Prolong on layer.
3. LED chip structure according to claim 1, which is characterized in that it further include coat of metal, the metal coating
Layer is covered on the reflective metal layer, the coat of metal be located at the current barrier layer and the reflective metal layer it
Between.
4. LED chip structure according to claim 1, which is characterized in that the transparency conducting layer coats the electric current resistance
Barrier, the transparency conducting layer part are located on the epitaxial layer.
5. LED chip structure according to claim 1, which is characterized in that the reflective metal layer is single-layer metal or more
Layer metal.
6. LED chip structure according to claim 1, which is characterized in that the material of the reflective metal layer be aluminium and/or
Silver.
7. LED chip structure according to claim 1, which is characterized in that the reflective metal layer and the epitaxial layer
Contact surface is not less than 90% for the reflectivity of 440-470nm wave band.
8. LED chip structure according to claim 7, which is characterized in that the transparency conducting layer with a thickness of 60nm-
230nm。
9. LED chip structure according to claim 1, which is characterized in that the edge of the current barrier layer is relative to institute
Reflective metal layer is stated to extend outwardly 10-15 μm.
10. a kind of production method of LED chip structure characterized by comprising
Epitaxial layer is formed on the substrate；
Reflective metal layer is formed on said epitaxial layer there；
Current barrier layer is formed on said epitaxial layer there, and the current barrier layer coats the reflective metal layer；
Transparency conducting layer and metal electrode layer are set gradually on the current barrier layer.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113921672A (en) * | 2021-09-14 | 2022-01-11 | 厦门三安光电有限公司 | Light emitting diode and light emitting module |
| CN114188452A (en) * | 2021-11-19 | 2022-03-15 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip and preparation method thereof |
| CN115498088A (en) * | 2022-11-16 | 2022-12-20 | 镭昱光电科技(苏州)有限公司 | Miniature light-emitting diode and preparation method thereof |
| CN117174798A (en) * | 2023-11-03 | 2023-12-05 | 江西兆驰半导体有限公司 | LED chip and preparation method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008300719A (en) * | 2007-06-01 | 2008-12-11 | Nichia Corp | Semiconductor light emitting element and manufacturing method thereof |
| CN101937950A (en) * | 2009-07-01 | 2011-01-05 | 吕联祥 | Fabrication method of flip chip type gallium nitride light emitting diode |
| CN202025790U (en) * | 2011-03-22 | 2011-11-02 | 广东银雨芯片半导体有限公司 | Improved light emitting diode chip with current barrier layer |
| CN102683540A (en) * | 2012-06-06 | 2012-09-19 | 安徽三安光电有限公司 | Gallium-nitride-based light-emitting diode and manufacturing method thereof |
| CN103887384A (en) * | 2012-12-20 | 2014-06-25 | 广东量晶光电科技有限公司 | A light-emitting component with reflection and current blocking characteristics and a manufacture method thereof |
| CN104300056A (en) * | 2014-10-11 | 2015-01-21 | 晶科电子（广州）有限公司 | High-reliability inverted LED chip, LED device and manufacturing method of high-reliability inverted LED chip |
| CN204179102U (en) * | 2014-10-11 | 2015-02-25 | 晶科电子（广州）有限公司 | A kind of flip LED chips of high reliability and LED component thereof |
| CN104485405A (en) * | 2014-12-23 | 2015-04-01 | 圆融光电科技有限公司 | Led chip and manufacturing method thereof |
| CN106449924A (en) * | 2016-08-30 | 2017-02-22 | 厦门乾照光电股份有限公司 | Photo-thermal-electric separated flip LED chip and manufacturing method thereof |
| CN108511569A (en) * | 2018-03-28 | 2018-09-07 | 厦门乾照光电股份有限公司 | A kind of LED chip and production method |
-
2018
- 2018-11-22 CN CN201811397647.7A patent/CN109378372A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008300719A (en) * | 2007-06-01 | 2008-12-11 | Nichia Corp | Semiconductor light emitting element and manufacturing method thereof |
| CN101937950A (en) * | 2009-07-01 | 2011-01-05 | 吕联祥 | Fabrication method of flip chip type gallium nitride light emitting diode |
| CN202025790U (en) * | 2011-03-22 | 2011-11-02 | 广东银雨芯片半导体有限公司 | Improved light emitting diode chip with current barrier layer |
| CN102683540A (en) * | 2012-06-06 | 2012-09-19 | 安徽三安光电有限公司 | Gallium-nitride-based light-emitting diode and manufacturing method thereof |
| CN103887384A (en) * | 2012-12-20 | 2014-06-25 | 广东量晶光电科技有限公司 | A light-emitting component with reflection and current blocking characteristics and a manufacture method thereof |
| CN104300056A (en) * | 2014-10-11 | 2015-01-21 | 晶科电子（广州）有限公司 | High-reliability inverted LED chip, LED device and manufacturing method of high-reliability inverted LED chip |
| CN204179102U (en) * | 2014-10-11 | 2015-02-25 | 晶科电子（广州）有限公司 | A kind of flip LED chips of high reliability and LED component thereof |
| CN104485405A (en) * | 2014-12-23 | 2015-04-01 | 圆融光电科技有限公司 | Led chip and manufacturing method thereof |
| CN106449924A (en) * | 2016-08-30 | 2017-02-22 | 厦门乾照光电股份有限公司 | Photo-thermal-electric separated flip LED chip and manufacturing method thereof |
| CN108511569A (en) * | 2018-03-28 | 2018-09-07 | 厦门乾照光电股份有限公司 | A kind of LED chip and production method |
Non-Patent Citations (1)
| Title |
|---|
| 丁莉峰，宋政伟，牛宇岚主编: "《金属表面防护处理及实验》", 1 November 2018 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113921672A (en) * | 2021-09-14 | 2022-01-11 | 厦门三安光电有限公司 | Light emitting diode and light emitting module |
| CN114188452A (en) * | 2021-11-19 | 2022-03-15 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip and preparation method thereof |
| CN114188452B (en) * | 2021-11-19 | 2023-05-12 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip and preparation method thereof |
| CN115498088A (en) * | 2022-11-16 | 2022-12-20 | 镭昱光电科技(苏州)有限公司 | Miniature light-emitting diode and preparation method thereof |
| CN117174798A (en) * | 2023-11-03 | 2023-12-05 | 江西兆驰半导体有限公司 | LED chip and preparation method thereof |
| CN117174798B (en) * | 2023-11-03 | 2024-02-09 | 江西兆驰半导体有限公司 | LED chip and preparation method thereof |
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