CN102623480A - Light emitting diode array and manufacture method thereof - Google Patents
Light emitting diode array and manufacture method thereof Download PDFInfo
- Publication number
- CN102623480A CN102623480A CN2011100368433A CN201110036843A CN102623480A CN 102623480 A CN102623480 A CN 102623480A CN 2011100368433 A CN2011100368433 A CN 2011100368433A CN 201110036843 A CN201110036843 A CN 201110036843A CN 102623480 A CN102623480 A CN 102623480A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- electrode
- light emitting
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000002861 polymer material Substances 0.000 claims abstract description 23
- 239000011159 matrix material Substances 0.000 claims description 76
- 230000004888 barrier function Effects 0.000 claims description 33
- 238000013459 approach Methods 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 12
- 238000010276 construction Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 60
- 229920002521 macromolecule Polymers 0.000 description 18
- 239000004575 stone Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002258 gallium Chemical class 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- KNCYXPMJDCCGSJ-UHFFFAOYSA-N piperidine-2,6-dione Chemical compound O=C1CCCC(=O)N1 KNCYXPMJDCCGSJ-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 210000003041 ligament Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/82005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a light emitting diode array and a manufacture method thereof. The method comprises the following steps of: forming a light emitting diode structure on a temporary substrate; carrying out an elemental program, and through a gap, separating the light emitting diode structure into a first light emitting diode and a second light emitting diode which are electrically connected with a first electrode and a second electrode respectively; placing at least one polymer material layer above the light emitting diode structure and filling at least partial material in the gap; forming at least an intraconnection on the polymer material layer, wherein the intraconnection is electrically connected with the first electrode and the second electrode; forming a function structure on the polymer material layer with the completed intraconnection; and removing the temporary substrate.
Description
Technical field
The present invention is relevant for a kind of semiconductor light-emitting elements, particularly relevant for a kind of light emitting diode matrix and manufacturing approach thereof.
Background technology
See also Figure 1A; It is the organigram of a prior art horizontal light-emitting diode, and the horizontal light-emitting diode includes brilliant substrate 11 of heap of stone, and brilliant substrate 11 of heap of stone certainly is the epitaxial structure 12a of building crystal to grow upwards; And be arranged on the epitaxial structure 12a, in order to the electrode unit 13a of electric energy to be provided.Brilliant substrate 11 of heap of stone is by the material that is easy to supply nitrogenize (indium) gallium series semiconductor material building crystal to grow, and for example sapphire (sapphire) or carborundum constitute.
And above-mentioned electrode unit 13a comprises the first electrode 131a and the second electrode 132a, accomplishes ohmic contact with n type doped layer 121a and p type doped layer 122a respectively, and then to epitaxial structure 12a electric energy is provided.When to first and second electrode 131a, when 132a applies voltage; Electric current from the second electrode 132a to brilliant substrate 11 of heap of stone be directed downwards advance after again in epitaxial structure 12a level disperse circulation; And make epitaxial structure 12a produce photon with photoelectric effect; And then outwards luminous, this also is the name origin of horizontal light-emitting diode.
The advantage of horizontal light-emitting diode is that manufacturing process is simple, but it has electric current Yong Sai (current crowding), non-homogeneous bright dipping and hot stack problems such as (thermal accumulation).So, just be developed in order to the rectilinear structure light-emitting diode that improves above-mentioned disappearance.
See also Figure 1B, it is the organigram of a prior art vertical LED, and vertical LED includes epitaxial structure 12b and is arranged on the epitaxial structure 12b, in order to the electrode unit 13b of electric energy to be provided.Epitaxial structure 12b can be selected from nitrogenize (indium) gallium series semiconductor material equally from brilliant substrate (this figure is not shown) the of heap of stone brilliant n of formation type doped layer 121b upwards of heap of stone, multiple quantum well (MQW) structure 123b and p type doped layer 122b.Then, connect the second electrode 132b, accomplish ohmic contact, and the second electrode 132b also can conform to a heat-radiating substrate 14, the increase radiating efficiency with p type doped layer 122b.At last, will build again and connect the first electrode 131b after brilliant substrate divests, accomplish ohmic contact with n type doped layer 121b.When to first and second electrode 131b, when 132b applies voltage, electric current is to circulate in vertical direction.So, develop the vertical LED (vertical LED) that and can effectively improve the electric current Yong Sai of conventional horizontal formula light-emitting diode, non-homogeneous bright dipping, with the problem of hot stack, but unavoidable ground, fabrication steps will be comparatively complicated.
And above-mentioned horizontal light-emitting diode and vertical LED; Mostly be to accomplish encapsulation with the mode of single crystal grain; If produce large-area area source; Just need develop the light emitting diode construction that to be more suitable for, so this case reintroduces new manufacturing method and structure about light-emitting diode, in order to improve the weak point of existing means.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of light emitting diode matrix and manufacturing approach thereof, to improve the yield of product.
The present invention mainly discloses a kind of light emitting diode matrix, comprises: functional structure comprises permanent substrate at least; First light-emitting diode is positioned at the top of functional structure; First electrode, first electrode electrically connects first light-emitting diode, and wherein, first electrode is between first light-emitting diode and functional structure; Second light-emitting diode is positioned at the top of functional structure; Second electrode, second electrode electrically connects second light-emitting diode, and wherein, second electrode is between second light-emitting diode and functional structure, and first light-emitting diode and second light-emitting diode are separated by the gap; At least one floor height molecular material, partially filled at least in the middle of the gap; Intraconnections is positioned at the below of above-mentioned polymer material layer, electrically connects first electrode and second electrode.
The present invention discloses a kind of manufacturing approach of light emitting diode matrix on the other hand, at first forms light emitting diode construction on temporary substrate; Carry out the element program, be first light-emitting diode and second light-emitting diode through interstitial area at a distance from light emitting diode construction, and electrically connect first electrode and second electrode respectively; Place at least a polymer material layer in light emitting diode construction top and partially filled at least in the middle of the gap; On polymer material layer, form intraconnections at least, electrically connect first electrode and second electrode; On the polymer material layer of accomplishing intraconnections, form a functional structure; Remove temporary substrate at last.
In an example of the present invention, this light emitting diode matrix more comprises at least one deck dielectric material between this macromolecular material and this intraconnections.
In an example of the present invention; This functional structure comprises this permanent substrate and an insulating barrier at least; This insulating barrier is positioned at the top of this permanent substrate, and this first light-emitting diode, this first electrode, this second light-emitting diode, this second electrode, this at least one floor height molecular material, this intraconnections all are positioned at this insulating barrier top.
In an example of the present invention; This functional structure comprises this permanent substrate, a Seed Layer, a reflector and an insulating barrier; This Seed Layer is positioned at the top of this permanent substrate, and this reflector is positioned at the top of this Seed Layer, and this insulating barrier is positioned at the top in this reflector.
In an example of the present invention, this functional structure comprises this permanent substrate, a reflector and an insulating barrier, and this reflector is positioned at the top of this permanent substrate, and this insulating barrier is positioned at the top in this reflector.
In an example of the present invention, this insulating barrier comprises a mucigel.
In an example of the present invention, this insulating barrier is to be an insulation reflector.
In an example of the present invention, this first light-emitting diode and this second light-emitting diode are connected in parallel.
In an example of the present invention; This first light-emitting diode is connected with this second light-emitting diode series connection; And this first light-emitting diode more electrically connects a third electrode; It is electrically opposite with this first electrode, and this second light-emitting diode more electrically connects one the 4th electrode, and it is electrically opposite with this second electrode.
In an example of the present invention; This light emitting diode matrix more comprises one first outside opening and one first outer line; This first outside opening passes this first light-emitting diode; And exposing this third electrode, this first outer line is formed in this first outside opening, has electrical contact to this third electrode.
In an example of the present invention; This light emitting diode matrix more comprises one second outside opening and one second outer line; This second outside opening passes this second light-emitting diode; And exposing the 4th electrode, this second outer line is formed in this second outside opening, has electrical contact to the 4th electrode.
In an example of the present invention; This light emitting diode matrix more comprises one the 3rd light-emitting diode; Electrode structure with short circuit; This third electrode relevant with this first light-emitting diode electrically connects, and the 3rd light-emitting diode has more one the 3rd outer line, so that this light emitting diode matrix and external environment condition electrically connect.
In an example of the present invention; This light emitting diode matrix more comprises one the 4th light-emitting diode; Electrode structure with short circuit; Four electrode relevant with this second light-emitting diode electrically connects, and the 4th light-emitting diode has more one the line all round, so that this light emitting diode matrix and external environment condition electric connection.
In an example of the present invention, after this macromolecular material is filled in this gap, carries out one and remove program and expose relevant this first electrode this second electrode relevant of this first ray structure to remove this macromolecular material of part with this second ray structure.
In an example of the present invention, after this macromolecular material is filled in this gap, more comprises and place at least a dielectric material in this macromolecular material top.
In an example of the present invention, this functional structure comprises a permanent substrate and an insulating barrier at least, and this insulating barrier is between this intraconnections and this permanent substrate.
In an example of the present invention, this manufacturing approach more comprises the following step: remove this first light-emitting diode of part and expose this third electrode to form one first outside opening; And in this first outside opening, form line outside one first, have electrical contact to this third electrode.
In an example of the present invention, this manufacturing approach more comprises the following step: remove this second light-emitting diode of part and expose the 4th electrode to form one second outside opening; And in this second outside opening, form line outside one second, have electrical contact to the 4th electrode.
In an example of the present invention, this element program more comprises formation one the 3rd light-emitting diode, and the 3rd light-emitting diode has the electrode structure of short circuit, and this third electrode relevant with this first light-emitting diode electrically connects.
In an example of the present invention, after this removes the temporary substrate program, form one the 3rd outer line and remove on the face, so that this light emitting diode matrix and external environment condition electrically connect in the temporary substrate of the 3rd light-emitting diode.
In an example of the present invention, this element program more comprises formation one the 4th light-emitting diode, and the 4th light-emitting diode has the electrode structure of short circuit, is that four electrode relevant with this second light-emitting diode electrically connects.
In an example of the present invention, after this removes the temporary substrate program, form one all round line remove on the face in the temporary substrate of the 4th light-emitting diode so that this light emitting diode matrix and external environment condition electrically connect.
Light emitting diode matrix of the present invention is the interval filled high polymer material layer between each light-emitting diode; And form intraconnections above that; So can avoid existing when connecting adjacent two light-emitting diodes, the phenomenon that intraconnections ruptures because of the high and low position drop of two light-emitting diode top electrodes.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Figure 1A is the organigram of prior art horizontal light-emitting diode.
Figure 1B is the organigram of prior art vertical LED.
Fig. 2 A and Fig. 2 B are formed in the vertical view of light emitting diode matrix on the same temporary substrate.
Fig. 3 is the generalized section of existing light emitting diode matrix.
Fig. 4 A to Fig. 4 F is the generalized section of light emitting diode matrix in the part processing procedure in one embodiment of the present of invention.
Fig. 5 A fills the sketch map of two-layer macromolecular material in the gap in showing according to one embodiment of present invention.
During Fig. 5 B shows according to one embodiment of present invention, filled high polymer material and the dielectric material sketch map in the gap.
Fig. 6 A to 6D shows in another example according to the embodiment of the invention, a kind of manufacturing flow chart of nearly rectilinear outer line.
Fig. 7 A to 7E shows in the another example according to the embodiment of the invention, the manufacturing flow chart of the outer line of a kind of nearly horizontal.
Fig. 7 F shows in the another example according to the embodiment of the invention, forms the light emitting diode matrix that parallel/series is connected through series connection intraconnections and parallelly connected intraconnections.
Fig. 8 A to 8F shows in the example again according to the embodiment of the invention, the manufacturing flow chart of the outer line of another kind of nearly horizontal.
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To light emitting diode matrix and its embodiment of manufacturing approach, structure, characteristic and the effect thereof that proposes according to the present invention, specify as after.
In one embodiment of the present of invention, Fig. 2 A and Fig. 2 B are the vertical views of the light emitting diode matrix 200 of formation on a temporary substrate 205.With reference to figure 2A; Light emitting diode matrix 200 has four lines (Y) and four and is listed as the still identical light-emitting diode 210 [0:3 that (X) separates; 0:3]; Each light-emitting diode is mesa (mesa), and above-mentioned ranks number is for illustrative purposes, and the ranks number of other numbers also can be applicable among the present invention.Light-emitting diode 210 can or be responded to the coupled plasma reactive ion etching through laser-induced thermal etching, and (Inductively Coupled Plasma Reactive Ion Etching ICP-RIE) cuts off.For example, adjacent light-emitting diode 210 [2,3] is cut off by gap 220 with 210 [3,3].Light-emitting diode 210 [2,3] has two electrodes, for example respectively as the anode 213 [2,3] of light-emitting diode 210 [2,3] and negative electrode 215 [2,3].Electrode can be formed on P type gallium nitride (P-GaN) and go up (no matter being on the P side direction or on the N side direction) with n type gallium nitride (N-GaN).Light emitting diode matrix provided by the present invention wherein can be connected in parallel between each light-emitting diode, be connected in series or parallel/series is connected.In an example, the anode of the light-emitting diode of same row approaches the negative electrode of adjacent light-emitting diode, so that light-emitting diode 210 can easily be connected in series; In addition, the negative electrode of same row light-emitting diode 210 right ends or anode can carry out parallelly connectedly with the negative electrode of adjacent columns or anode, form the light emitting diode matrix 200 that parallel/series is connected whereby.
Please refer to Fig. 2 B, anode 213 [2,3] is connected by series connection intraconnections 230 [2,3] with negative electrode 215 [3,3].All leftmost side negative electrodes 215 [0,0], 215 [0,1], 215 [0,2], 215 [0,3] are connected by parallelly connected intraconnections 230a.All rightmost side anodes 213 [3,0], 213 [3,1], 213 [3,2], 213 [3,3] are connected by parallelly connected intraconnections 230b.Anode 213 [2,3] is Metal Substrate (metal based) with the material of negative electrode 215 [3,3], and all intraconnections 230 [2,3], 230a, 230b also are like this.Anode 213 [2,3], negative electrode 215 [3,3] can be identical or different with the material of all intraconnections 230,230a, 230b.
Fig. 3 is the generalized section of existing light emitting diode matrix.On a temporary substrate 105, constitute a plurality of adjacent as shown in Figure 3 light-emitting diodes 110 [1,3] and 110 [2,3].113 [1,3] are the anodes of light-emitting diode 110 [1,3], and 115 [2,3] are the negative electrodes of light-emitting diode 110 [2,3].In the conventional art, oxide layer 310 is deposited in the gap 120 [1] between the light-emitting diode 110 with electrode 113 [1,3] and 115 [2,3] and adjacent structure electric insulation.The intraconnections 130 [1,3] of connecting then is formed on the oxide layer 310 with connection electrode 113 [1,3] and 115 [2,3].Because the degree of depth in gap 120 [1], oxide layer 310 can not be full of gap 120, and makes series connection intraconnections 130 form the complex outline with sharp edges.Sharp edges is easy to fracture relatively and therefore reduces reliability problems.
Fig. 4 A to Fig. 4 F is the generalized section of light emitting diode matrix in the part processing procedure in one embodiment of the present of invention.Can understand one embodiment of the present of invention by Fig. 4 A to Fig. 4 D and use macromolecular material filling part at least, or the method and the step of fully filling up the gap 220 between the light-emitting diode 210.Because light emitting diode matrix of the present invention is under low relatively current density, to operate to reach high efficiency.Low current density produces less heat and allows and in the light emitting diode matrix of accomplishing, keeps macromolecular material.Detailed structure and manufacturing approach will be described hereinafter.
Please refer to Fig. 4 A, on substrate 205, form a light emitting diode construction, and carry out an element program; It is (following with anode 213 [1 that it has first electrode 213 [1,3] with gap 220 differentiations first light-emitting diode 210 [1,3]; 3] describe for example) and second light-emitting diode 210 [2; 3] it has second electrode 215 [2,3] (following describe for example with negative electrode 215 [2,3]).Macromolecule layer 410 is deposited on first light-emitting diode 210 [1,3] and second light-emitting diode 210 [2,3] top, and macromolecule layer 410 fully fills up gap 220.Macromolecular material can be a photoresist, for example gather polydimethyl glutarimide (Polymethyl glutarimide, PMGI) or SU-8.The refractive index of macromolecule layer 410 (between air and semiconductor) in 1 to 2.6 scope extracts to improve light.The optical clarity of macromolecule layer 410 is equal to or greater than 90%, and preferable more can be equal to or greater than 99%.The thickness of the macromolecule layer 410 that usually, measures on the anode 213 [1,3] is approximately 2 microns.Macromolecule layer 410 can be pre-mixed with adjustment output photochromic with fluorescent material (30wt% that is about polymer).Yet the relative size of the thickness of macromolecule layer 410 and phosphor particles size must cooperatively interact.For example, when the thickness of the last macromolecule layer 410 of anode 213 [1,3] was about 3 microns, suitable phosphor particles size was about 3 microns or littler.
Please refer to Fig. 4 B, the light shield 420 that forms pattern is placed in macromolecule layer 410 tops.Light shield 420 has opening 423 at the correspondence position of anode 213 [1,3] and negative electrode 215 [2,3], to allow removing of macromolecule layer 410 on it.After removing part polymer material layer 410, can expose anode 213 [1,3] and negative electrode 215 [2,3] to the open air, and macromolecule layer 410 presents level and smooth surface profile.In addition; Can on polymer surface, carry out surface hydrophilic modification (for example oxygen plasma processing) so that original hydrophobic surface is changed into water-wetted surface, can make Metal Substrate (metal based) intraconnections of follow-up formation can have higher adhesion macromolecule layer 410.
Please refer to Fig. 4 C, form series connection intraconnections 430 above macromolecule layer 410 to connect anode 213 [1,3] and negative electrode 215 [2,3].Because the smooth surface profile of macromolecule layer 410, the series connection intraconnections 430 of follow-up formation can increase durability, improves the problem that traditional intraconnections is easy to rupture owing to complicated profile and sharp corner.
Please refer to Fig. 4 D, on above-mentioned series connection intraconnections 430, form a functional structure 450.In the present embodiment, above-mentioned functions structure 450 comprises a permanent substrate 458 and an insulating barrier 452 at least.Please again with reference to figure 4D, functional structure 450 is to form layer by layer with the original position forming method.At first, form the top of an insulating barrier 452 (for example: a dielectric material is amassed in Shen) in series connection intraconnections 430; Secondly, form a reflector 454 in the top of insulating barrier 452; Then, form a Seed Layer 456 in the reflector 454 top; At last, form a permanent substrate 458 in the top of Seed Layer 456.
Wherein the material of insulating barrier 452 can be selected silicon dioxide, and the material in reflector 454 then can be selected titanium/aluminum metal layer or titanium/silver metal layer, and the material of Seed Layer 456 can be selected gold (Au), and thickness is about about 150 nanometers (nm); If reflector 454 is a conductor, Seed Layer 456 can form through plating or electroless-plating mode.Can form through electro-coppering (Cu) mode as for permanent substrate 458, thickness is about 50～100 microns (um), or forms the permanent substrate of a silicon dioxide with original position through chemical vapour deposition technique.
And functional structure 450 visual demands and select wherein which floor gets final product for use are for example only accomplished insulating barrier 452, reflector 454 and permanent substrate 458 or are only accomplished insulating barrier 452 and permanent substrate 458.Because reflector 454 mainly is to be used as mirror surface (mirror) to use; In order to increase light extraction efficiency; Mirror surface (mirror) can directly plate titanium/aluminium minute surface or titanium/silver specular and form; For example: the thickness of titanium is about 10 nanometers (nm), and the thickness of silver is about 300 nanometers (nm), and wherein the function of titanium is for increasing tack.It should be noted that mirror surface differs is decided to be conductor, and (distributed Bragg reflector is DBR) as an insulation reflector 454 also can to use the distributed Bragg reflector mirror.Or comprehensive speculum (the Omidirectional Reflectors that forms of dielectric material and metal; ODR)
After accomplishing Fig. 4 A to Fig. 4 D; The light emitting diode matrix of processing comprises functional structure 450, first light-emitting diode 210 [1,3], first electrode 213 [1,3], second light-emitting diode 210 [2; 3], second electrode 215 [2,3], at least one floor height molecular material layer 410 and series connection intraconnections 430.Wherein, functional structure 450 comprises the below that permanent substrate 458, the first light-emitting diodes 210 [1,3] are positioned at functional structure 450 at least; First electrode 213 [1,3] is electrically connected to first light-emitting diode 210 [1,3], and first electrode 213 [1; 3] be positioned between first light-emitting diode 210 [1,3] and the functional structure 450, second light-emitting diode 210 [2,3] is positioned at the below of functional structure 450; Second electrode 215 [2,3] is electrically connected to second light-emitting diode 210 [2,3], and second electrode 215 [2; 3] be positioned between second light-emitting diode 210 [2,3] and the functional structure 450 first light-emitting diode 210 [1,3] and second light-emitting diode 210 [2; 3] can be separated by gap 220, at least one floor height molecular material layer 410 is partially filled at least in the middle of gap 220, and series connection intraconnections 430 is positioned at the top of polymer material layer 410; Electrically connect first electrode 213 [1,3] and second electrode 215 [2,3].
Fig. 4 E is the generalized section of light emitting diode matrix in the part processing procedure in the another embodiment of the present invention.Please refer to Fig. 4 E, in another embodiment of the present invention, on above-mentioned series connection intraconnections 430, form another functional structure 460.Compare with Fig. 4 D; Functional structure 450 is to form with the original position forming method; Functional structure 460 then is to be pre-formed (insulating barrier 464, reflector 466, permanent substrate 468) after the agent structure, with mucigel 462 agent structure is pasted to series connection intraconnections 430 tops again.
Please refer to Fig. 4 F, in another embodiment of the present invention, can the light emitting diode matrix of Fig. 4 D be removed temporary substrate 205, and with the face that removes of temporary substrate as light-emitting area.Therefore, can be during practical application with the light emitting diode matrix use of turning upside down, the similar occupation mode of covering crystalline substance (flip chip).Please again with reference to figure 4F; For the above reasons; Functional structure 470 contained each layer material of the light emitting diode matrix that this example provided from bottom to top are permanent substrate 478 and insulating barrier 474 in regular turn; Certainly functional structure 470 also can be identical with functional structure 450 or 460, or comprise other combinations or unlike material, turns upside down in proper order as long as note it; A plurality of light-emitting diodes 210 are positioned at insulating barrier 474 tops of functional structure 470; The anode 213 [1,3] of adjacent light-emitting diode and negative electrode 215 [2,3] are between light-emitting diode and insulating barrier 474; Adjacent light-emitting diode is separated (separated) by gap (gap) 220; Macromolecular material 410 is filled in the middle of the gap 220; Series connection intraconnections (interconnect) 430 between macromolecular material 410 and insulating barrier 474, electrically connects the anode 213 [1,3] and negative electrode 215 [2,3] of adjacent light-emitting diode.
In addition, in the gap 220 except filling the simple layer macromolecule, but also filling multilayer macromolecule.Fig. 5 A fills the sketch map of two-layer macromolecular material in the gap in showing according to one embodiment of present invention.Shown in Fig. 5 A, for example: insert PMGI photoresistance 510 earlier, and then fill SU-8 photoresistance 520.The PMGI photoresistance has preferable filling characteristic.Be deposited on PMGI photoresistance 510 on SU-8 photoresistance 520 can be used as protective layer with protect following PMGI photoresistance 510 not with successive process in developer reaction.Successive process forms series connection intraconnections 430 through metal sputtering or the vapor deposition that uses the NR-7 pattern to form photoresistance.If do not have the protection of SU-8 photoresistance 520 and developer that the NR-7 photoresist is used maybe with 510 reactions of PMGI photoresistance.Yet if series connection intraconnections 430 is formed with wire mark or steel plate printing by the silver slurry, single PMGI or SU-8 photoresistance can be used for filling whole gap 220 further to reduce cost.
Moreover, except filling the simple layer macromolecule, also can amass a dielectric materials layer 525 in Shen again by first filled high polymer layer 510 in the gap 220, during Fig. 5 B shows according to one embodiment of present invention, filled high polymer material and the dielectric material sketch map in the gap.Shown in Fig. 5 B; In some example; The then property of series connection intraconnections 430 materials and macromolecule layer 510 is not good, therefore, can amass dielectric materials layer 525 in Shen again by first filled high polymer layer 510; Because dielectric materials layer 525 has preferable then property with intraconnections 430 materials of connecting usually, increase the reliability of product whereby; And after the first filled high polymer layer 510, the degree of depth in gap 220 significantly reduces, and therefore, the follow-up dielectric material 525 that forms is not easy to take place the fracture situation.
In another example of present embodiment, show a kind of formation method of nearly rectilinear outer line.Fig. 6 A to 6D shows in another example according to the embodiment of the invention, the manufacturing flow chart of nearly rectilinear outer line.It shown in Fig. 6 A to Fig. 6 D the section processing procedure sketch map that A-A ' locates in the position of the light emitting diode matrix 200 shown in Fig. 2 B.At first; Fig. 6 A shows that light emitting diode matrix comprises the gap 220 of filled high polymer material 610 in four light-emitting diodes; And first light-emitting diode 210 [1,3], second light-emitting diode 210 [2,3], the 3rd light-emitting diode 210 [0 of 430 series connection of formation series connection intraconnections; 3] and the 4th light-emitting diode 210 [3,3].First light-emitting diode 210 [1,3] removes to have outside first electrode 213 [1,3], also has third electrode 215 [1; 3] it is electrically opposite with first electrode 213 [1,3] (following describe for example with negative electrode 215 [1,3]), second light-emitting diode 210 [2; 3] except that having outside second electrode 215 [2,3], also has the 4th electrode 213 [2; 3] it is electrically opposite with second electrode 215 [2,3] (following describe for example with anode 213 [2,3]).
Fig. 6 B show with laser lift-off technique (Laser Lift-off, LLO) or the chemical etching isolation technics (Chemical Lift-off CLO) removes temporary substrate 205.Then; Fig. 6 C shows that remove part leftmost side light-emitting diode 210 [0:3] exposes the negative electrode 215 [0:3] of the leftmost side to form one first outside opening 650a, and removes part rightmost side light-emitting diode 210 [3:3] and expose the anode 213 [3:3] of the rightmost side to form one second outside opening 650b.At last, in the first outside opening 650a, form nearly rectilinear outer line 660a, have electrical contact to the negative electrode 215 [0:3] of the leftmost side, and in the second outside opening 650b, form closely rectilinear outside line 660b, have electrical contact to the anode 213 [3:3] of the rightmost side.
In the another example of present embodiment, show the formation method of the outer line of a kind of nearly horizontal.Fig. 7 A to Fig. 7 E shows in the another example according to the embodiment of the invention, the manufacturing flow chart of the outer line of nearly horizontal.At first; Fig. 7 A shows in four light-emitting diodes 210 [0:3], 210 [1:3], 210 [2:3], 210 [3:3] and light-emitting diode top and each light-emitting diodes ligament 220 and filled at least a macromolecular material 710, removes part polymer material layer 710 and exposes each anode 213 [0:3], 213 [1:3], 213 [2:3], 213 [3:3] and negative electrode 215 [0:3], 215 [1:3], 215 [2:3], 215 [3:3].Particularly leftmost side light-emitting diode 210 [0:3] has also removed most polymer material layer 710 with the surface of rightmost side light-emitting diode 210 [3:3], makes that no polymer material layer 710 exists between anode 213 [3:3] and the negative electrode 215 [3:3].Fig. 7 B is shown in polymer material layer 710 tops and forms series connection intraconnections 740; With series connection anode 213 [1:3] and negative electrode 215 [2:3]; The negative electrode 215 [0:3] of while leftmost side light-emitting diode 210 [0:3] itself and anode 213 [0:3] form the electrode structure of short circuit with parallelly connected intraconnections 740a; And extend to adjacent negative electrode 215 [1:3]; Rightmost side light-emitting diode 210 [3:3] also forms the electrode structure of short circuit through the negative electrode 215 [3:3] of parallelly connected intraconnections 740b connection itself with anode 213 [3:3], and extends to adjacent anode 213 [2:3].Wherein, series connection intraconnections 740, parallelly connected intraconnections 740a and parallelly connected intraconnections 740b can form in same processing procedure or separately.
Fig. 7 F shows in the another example according to the embodiment of the invention, forms the light emitting diode matrix that parallel/series is connected through series connection intraconnections and parallelly connected intraconnections.Please refer to 7F figure, similar with 2B figure, the negative electrode of adjacent Light-Emitting Diode can be connected through intraconnections 740 with anode in the same row light-emitting diode; All leftmost side negative electrodes 215 [0,0], 215 [0,1], 215 [0; 2], 215 [0,3] are connected all rightmost side anodes 213 [3 by parallelly connected intraconnections 740a; 0], 213 [3,1], 213 [3,2], 213 [3; 3] connect by parallelly connected intraconnections 740b, form the light emitting diode matrix that parallel/series is connected whereby.
Get back to processing procedure originally, please refer to Fig. 7 C, form functional structure 460 in parallelly connected intraconnections 740a, 740b top.Then, Fig. 7 D show with laser lift-off technique (Laser Lift-off, LLO) or the chemical etching isolation technics (Chemical Lift-off CLO) removes temporary substrate 205.At last, form outer line 770a of nearly horizontal and 770b and remove on the face in temporary substrate, the 3rd light-emitting diode 210 [0:3] and the 4th light-emitting diode 210 [3:3] of respectively corresponding short circuit are so that light emitting diode matrix and external environment condition electrically connect.
In an example again of present embodiment, show the another kind formation method of the outer line of nearly horizontal.Fig. 8 A to 8F shows in the example again according to the embodiment of the invention, the another kind of manufacturing flow chart of the outer line of nearly horizontal.Fig. 8 A to Fig. 8 F shows the section processing procedure sketch map of light emitting diode matrix.At first, Fig. 8 A shows in the gap 220 of four light-emitting diodes 210 [0:3], 210 [1:3], 210 [2:3], 210 [3:3] as yet not filled high polymer material, advanced column electrode short circuit step.The negative electrode 215 [0:3] of leftmost side light-emitting diode 210 [0:3] itself and the electrode structure of anode 213 [0:3] with parallelly connected intraconnections 840a formation short circuit; Rightmost side light-emitting diode 210 [3:3] is also through parallelly connected intraconnections 840b, and the negative electrode 215 [3:3] of connection itself and anode 213 [3:3] form the electrode structure of short circuit.
Similar with 2B figure, the negative electrode of same row light-emitting diode right ends or anode can carry out parallelly connectedly with the negative electrode of adjacent columns or anode in this example, and detail section repeats no more.
Please refer to Fig. 8 B; After the electric pole short circuit step is accomplished; At least a macromolecular material 810 has been filled with the top in the gap 220 of four light-emitting diodes 210 [0:3], 210 [1:3], 210 [2:3], 210 [3:3], removes part polymer material layer 810 and exposes each anode 213 [1:3], 213 [2:3] and negative electrode 215 [1:3], 215 [2:3].What pay special attention to is, the short-circuiting electrode superstructure of the leftmost side the 3rd light-emitting diode 210 [0:3] and the rightmost side the 4th light-emitting diode 210 [3:3] does not have polymer material layer 810 and covers, or covers and remove behind the polymer material layer 810 again.
Please refer to Fig. 8 C, form series connection intraconnections 845, with series connection anode 213 [1:3] and negative electrode 215 [2:3]; Form the electrode structure of parallelly connected intraconnections 845a, and extend to adjacent electrode 215 [1:3] with the connection leftmost side first light-emitting diode 210 [0:3] short circuit; Form the electrode structure of parallelly connected intraconnections 845b, and extend to adjacent electrode 213 [3:3] with the connection rightmost side the 4th light-emitting diode 210 [3:3] short circuit.Wherein, series connection intraconnections 845, parallelly connected intraconnections 845a and parallelly connected intraconnections 845b can form in same processing procedure or separately.
Please refer to Fig. 8 D, form functional structure 460 in all intraconnections tops.Then, Fig. 8 E show with laser lift-off technique (Laser Lift-off, LLO) or the chemical etching isolation technics (Chemical Lift-off CLO) removes temporary substrate 205.At last, please refer to Fig. 8 F, form the outer line 870a of nearly horizontal and remove on the face in temporary substrate with the outer line 870b of nearly horizontal, and the light-emitting diode of corresponding array two ends short circuit, so that light emitting diode matrix and external environment condition electrically connect.
In sum; Light emitting diode matrix of the present invention can be between light-emitting diode gap filled high polymer material layer; And form intraconnections above that; Therefore can avoid existing when connecting two light-emitting diodes, the phenomenon that intraconnections ruptures because of the high and low position drop of two light-emitting diode top electrodes.Directly on the light-emitting diode at light emitting diode matrix edge, form intraconnections in addition and can guarantee its dead short circuit; And outside its substrate removes on the face configuration line; So can avoid existing light-emitting diode to electrically connect the processing procedure that on light-emitting diode, carries out opening, to reduce injury to LED array structure for forming outer line and external environment condition.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the technology contents of above-mentioned announcement capable of using is made a little change or is modified to the equivalent embodiment of equivalent variations; In every case be not break away from technical scheme content of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (24)
1. light emitting diode matrix; Comprise a functional structure, one first light-emitting diode, one first electrode, one second light-emitting diode, one second electrode and an intraconnections, it is characterized in that: this functional structure comprises a permanent substrate at least, and this first light-emitting diode is positioned at the top of functional structure; This first electrode electrically connects this first light-emitting diode; And between this first light-emitting diode and this functional structure, this second light-emitting diode is positioned at the top of functional structure, and this second electrode electrically connects this second light-emitting diode; And between this second light-emitting diode and this functional structure; This first light-emitting diode and this second light-emitting diode are separated by a gap, and this light emitting diode matrix also comprises at least one floor height molecular material, and be partially filled at least in the middle of this gap; This intraconnections is positioned at the below of this polymer material layer, electrically connects this first electrode and this second electrode.
2. light emitting diode matrix as claimed in claim 1 is characterized in that: this light emitting diode matrix more comprises at least one deck dielectric material between this macromolecular material and this intraconnections.
3. light emitting diode matrix as claimed in claim 1; It is characterized in that: this functional structure comprises this permanent substrate and an insulating barrier at least; This insulating barrier is positioned at the top of this permanent substrate, and this first light-emitting diode, this first electrode, this second light-emitting diode, this second electrode, this at least one floor height molecular material, this intraconnections all are positioned at this insulating barrier top.
4. light emitting diode matrix as claimed in claim 1; It is characterized in that: this functional structure comprises this permanent substrate, a Seed Layer, a reflector and an insulating barrier; This Seed Layer is positioned at the top of this permanent substrate; This reflector is positioned at the top of this Seed Layer, and this insulating barrier is positioned at the top in this reflector.
5. light emitting diode matrix as claimed in claim 1 is characterized in that: this functional structure comprises this permanent substrate, a reflector and an insulating barrier, and this reflector is positioned at the top of this permanent substrate, and this insulating barrier is positioned at the top in this reflector.
6. light emitting diode matrix as claimed in claim 5 is characterized in that: this insulating barrier comprises a mucigel.
7. light emitting diode matrix as claimed in claim 1 is characterized in that: this insulating barrier is to be an insulation reflector.
8. light emitting diode matrix as claimed in claim 1 is characterized in that: this first light-emitting diode and this second light-emitting diode are connected in parallel.
9. light emitting diode matrix as claimed in claim 1; It is characterized in that: this first light-emitting diode is connected with this second light-emitting diode series connection; And this first light-emitting diode more electrically connects a third electrode; It is electrically opposite with this first electrode, and this second light-emitting diode more electrically connects one the 4th electrode, and it is electrically opposite with this second electrode.
10. light emitting diode matrix as claimed in claim 9; It is characterized in that: this light emitting diode matrix more comprises one first outside opening and one first outer line; This first outside opening passes this first light-emitting diode; And exposing this third electrode, this first outer line is formed in this first outside opening, has electrical contact to this third electrode.
11. light emitting diode matrix as claimed in claim 9; It is characterized in that: this light emitting diode matrix more comprises one second outside opening and one second outer line; This second outside opening passes this second light-emitting diode; And exposing the 4th electrode, this second outer line is formed in this second outside opening, has electrical contact to the 4th electrode.
12. light emitting diode matrix as claimed in claim 9; It is characterized in that: this light emitting diode matrix more comprises one the 3rd light-emitting diode; Electrode structure with short circuit; This third electrode relevant with this first light-emitting diode electrically connects, and the 3rd light-emitting diode has more one the 3rd outer line, so that this light emitting diode matrix and external environment condition electrically connect.
13. light emitting diode matrix as claimed in claim 9; It is characterized in that: this light emitting diode matrix more comprises one the 4th light-emitting diode; Electrode structure with short circuit; Four electrode relevant with this second light-emitting diode electrically connects, and the 4th light-emitting diode has more one the line all round, so that this light emitting diode matrix and external environment condition electric connection.
14. the manufacturing approach of a light emitting diode matrix comprises:
Form a light emitting diode construction on a temporary substrate;
Carry out an element program; Is one first light-emitting diode and one second light-emitting diode through an interstitial area at a distance from this light emitting diode construction; Wherein, this first light-emitting diode electrically connects one first electrode, and this second light-emitting diode electrically connects one second electrode;
Place at least a macromolecular material in this light emitting diode construction top and partially filled at least in the middle of this gap;
On this macromolecular material, form at least one intraconnections, electrically connect relevant this first electrode this second electrode relevant of this first ray structure with this second ray structure;
On this macromolecular material of accomplishing this intraconnections, form a functional structure; And
Carry out one and remove the temporary substrate program.
15. the manufacturing approach of light emitting diode matrix as claimed in claim 14; It is characterized in that: after this macromolecular material is filled in this gap, carries out one and remove program and expose relevant this first electrode this second electrode relevant of this first ray structure to remove this macromolecular material of part with this second ray structure.
16. the manufacturing approach of light emitting diode matrix as claimed in claim 14 is characterized in that: after this macromolecular material is filled in this gap, more comprises and place at least a dielectric material in this macromolecular material top.
17. the manufacturing approach of light emitting diode matrix as claimed in claim 14 is characterized in that: this functional structure comprises a permanent substrate and an insulating barrier at least, and this insulating barrier is between this intraconnections and this permanent substrate.
18. the manufacturing approach of light emitting diode matrix as claimed in claim 14; It is characterized in that: this first light-emitting diode and this second light-emitting diode are for being connected in series; And this first light-emitting diode more electrically connects a third electrode; It is electrically opposite with this first electrode, and this second light-emitting diode more electrically connects one the 4th electrode, and it is electrically opposite with this second electrode.
19. the manufacturing approach of light emitting diode matrix as claimed in claim 18 is characterized in that: this manufacturing approach more comprises the following step:
Remove this first light-emitting diode of part and expose this third electrode to form one first outside opening; And
In this first outside opening, form line outside one first, have electrical contact to this third electrode.
20. the manufacturing approach of light emitting diode matrix as claimed in claim 18 is characterized in that: this manufacturing approach more comprises the following step:
Remove this second light-emitting diode of part and expose the 4th electrode to form one second outside opening; And
In this second outside opening, form line outside one second, have electrical contact to the 4th electrode.
21. the manufacturing approach of light emitting diode matrix as claimed in claim 18; It is characterized in that: this element program more comprises formation one the 3rd light-emitting diode; The 3rd light-emitting diode has the electrode structure of short circuit, and this third electrode relevant with this first light-emitting diode electrically connects.
22. the manufacturing approach of light emitting diode matrix as claimed in claim 21; It is characterized in that: after this removes the temporary substrate program; Form one the 3rd outer line and remove on the face, so that this light emitting diode matrix and external environment condition electrically connect in the temporary substrate of the 3rd light-emitting diode.
23. the manufacturing approach of light emitting diode matrix as claimed in claim 18; It is characterized in that: this element program more comprises formation one the 4th light-emitting diode; The 4th light-emitting diode has the electrode structure of short circuit, is that four electrode relevant with this second light-emitting diode electrically connects.
24. the manufacturing approach of light emitting diode matrix as claimed in claim 23; It is characterized in that: after this removes the temporary substrate program; Form one all round line remove on the face in the temporary substrate of the 4th light-emitting diode so that this light emitting diode matrix and external environment condition electrically connect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100368433A CN102623480A (en) | 2011-02-01 | 2011-02-01 | Light emitting diode array and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100368433A CN102623480A (en) | 2011-02-01 | 2011-02-01 | Light emitting diode array and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102623480A true CN102623480A (en) | 2012-08-01 |
Family
ID=46563288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100368433A Pending CN102623480A (en) | 2011-02-01 | 2011-02-01 | Light emitting diode array and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102623480A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178074A (en) * | 2011-12-21 | 2013-06-26 | 华夏光股份有限公司 | Light emitting diode array and forming method thereof |
| CN103178075A (en) * | 2011-12-21 | 2013-06-26 | 华夏光股份有限公司 | Light emitting diode array and forming method thereof |
| CN106129206A (en) * | 2016-07-29 | 2016-11-16 | 天津三安光电有限公司 | There is light emitting diode of full mirror surface structure and preparation method thereof |
| CN108461515A (en) * | 2012-08-07 | 2018-08-28 | 首尔伟傲世有限公司 | Wafer level led array |
| CN110854250A (en) * | 2015-02-13 | 2020-02-28 | 首尔伟傲世有限公司 | Light emitting element |
| US11024552B2 (en) | 2016-04-15 | 2021-06-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device arrangement structure assembly having adhesive tape layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100078656A1 (en) * | 2008-09-30 | 2010-04-01 | Seoul Opto Device Co., Ltd. | Light emitting device and method of fabricating the same |
| US7709849B1 (en) * | 2008-12-17 | 2010-05-04 | Seoul Semiconductor Co., Ltd. | Light emitting diode having plurality of light emitting cells and method of fabricating the same |
-
2011
- 2011-02-01 CN CN2011100368433A patent/CN102623480A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100078656A1 (en) * | 2008-09-30 | 2010-04-01 | Seoul Opto Device Co., Ltd. | Light emitting device and method of fabricating the same |
| US7709849B1 (en) * | 2008-12-17 | 2010-05-04 | Seoul Semiconductor Co., Ltd. | Light emitting diode having plurality of light emitting cells and method of fabricating the same |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178074A (en) * | 2011-12-21 | 2013-06-26 | 华夏光股份有限公司 | Light emitting diode array and forming method thereof |
| CN103178075A (en) * | 2011-12-21 | 2013-06-26 | 华夏光股份有限公司 | Light emitting diode array and forming method thereof |
| CN108461515A (en) * | 2012-08-07 | 2018-08-28 | 首尔伟傲世有限公司 | Wafer level led array |
| CN110854250A (en) * | 2015-02-13 | 2020-02-28 | 首尔伟傲世有限公司 | Light emitting element |
| US11024552B2 (en) | 2016-04-15 | 2021-06-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device arrangement structure assembly having adhesive tape layer |
| TWI735544B (en) * | 2016-04-15 | 2021-08-11 | 台灣積體電路製造股份有限公司 | Device arrangement structure assembly and test method |
| CN106129206A (en) * | 2016-07-29 | 2016-11-16 | 天津三安光电有限公司 | There is light emitting diode of full mirror surface structure and preparation method thereof |
| CN106129206B (en) * | 2016-07-29 | 2019-02-26 | 天津三安光电有限公司 | Light emitting diode and preparation method thereof with full mirror surface structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10749075B2 (en) | Semiconductor light-emitting device | |
| TWI616004B (en) | Semiconductor light-emitting device | |
| CN103378240B (en) | Luminescent device and light emitting device packaging piece | |
| KR102617962B1 (en) | Semiconductor light emitting device | |
| CN108231820A (en) | It is used to implement the light emitting diode of more colors（LED）Device | |
| US10998468B2 (en) | Semiconductor light-emitting device | |
| EP3923326A1 (en) | Light-emitting element for display and display device comprising same | |
| CN102623480A (en) | Light emitting diode array and manufacture method thereof | |
| CN105280772A (en) | Light emitting diode and method of fabricating the same | |
| US10177290B2 (en) | Light-emitting device | |
| US11329195B2 (en) | Semiconductor light-emitting device | |
| CN113169259A (en) | Light emitting diode and manufacturing method thereof | |
| CN112768484A (en) | Light emitting diode and manufacturing method thereof | |
| CN106159073B (en) | Light emitting element and method for manufacturing the same | |
| TWI466327B (en) | Method for fabricating wafer-level light emitting diode structure | |
| CN110021691B (en) | Semiconductor light emitting device | |
| US20240113272A1 (en) | Light emitting device | |
| EP2930749A1 (en) | Light-emitting device and method of producing the same | |
| CN109659412A (en) | Semiconductor light-emitting elements | |
| TWI672837B (en) | Semiconductor light-emitting device | |
| TWI599017B (en) | Light emitting diode array on wafer level and method of forming the same | |
| CN103367582A (en) | Semiconductor light emitting element and manufacturing method thereof | |
| CN116154079A (en) | Light emitting diode, light emitting module and light emitting device | |
| CN115602773A (en) | Light-emitting diode | |
| KR20130017360A (en) | Growth substrate, light emitting diode and package of thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120801 |