CN103367582A - Semiconductor light emitting element and manufacturing method thereof - Google Patents
Semiconductor light emitting element and manufacturing method thereof Download PDFInfo
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- CN103367582A CN103367582A CN2012100879382A CN201210087938A CN103367582A CN 103367582 A CN103367582 A CN 103367582A CN 2012100879382 A CN2012100879382 A CN 2012100879382A CN 201210087938 A CN201210087938 A CN 201210087938A CN 103367582 A CN103367582 A CN 103367582A
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Abstract
The invention provides a semiconductor light emitting element and a manufacturing method thereof, wherein the semiconductor light emitting element comprises a substrate, a first state doped semiconductor layer, a light-emitting layer, a second state semiconductor layer and an optical micro structure layer. The first state doped semiconductor layer is arranged on the substrate and comprises a base part and a platform part. The base part is provided with a top surface, and the platform part is arranged on the upper surface of the base part. The light-emitting layer is arranged on the first state doped semiconductor layer. The second state doped semiconductor layer is arranged on the light-emitting layer. The optical micro structure layer is embedded in the first state doped semiconductor layer.
Description
Technical field
The present invention is relevant a kind of light-emitting component and preparation method thereof, and particularly about a kind of semiconductor light-emitting elements and preparation method thereof.
Background technology
Along with the progress of photoelectric technology, the exploration and application of light-emitting diode (light-emitting diode, LED) is gradually ripe.Because light-emitting diode has the advantages such as low pollution, low power consumption, reaction time (response time) weak point, long service life, various light source or lighting field have been widely used in, such as traffic sign, billboards and display backlight source etc. makes light-emitting diode day by day become one of opto-electronics that gets most of the attention.
Generally speaking, the electrode configuration mode of light-emitting diode can be divided into horizontal arrangement and arranged perpendicular, wherein horizontal arrangement refers to that first and second electrode is configured in the same side of light-emitting diode epitaxial structure, and arranged perpendicular refers to that first and second electrode is configured in respectively the relative both sides of light-emitting diode epitaxial structure.Particularly, be in the light emitting diode construction of horizontal arrangement at electrode, the manufacture method of existing light-emitting diode is to form the first attitude doping semiconductor layer at substrate, it for example is n type semiconductor layer, in succession form again luminescent layer and the second attitude doping semiconductor layer thereon, it for example is p type semiconductor layer, then, etching by vertical direction removes part n type semiconductor layer, luminescent layer and the second attitude doping semiconductor layer, and disposes respectively the first electrode and the second electrode on p type semiconductor layer and n type semiconductor layer.When electric current flows to N type semiconductor via P type semiconductor, because electric current too concentrates in the sub-fraction zone between this two electrode, except the light that causes sending is inhomogeneous, also so that the heat that passes through to produce because of electric current is too concentrated, and then cause LED heat radiating to be difficult for and easily damage, and cause easily the luminous efficiency of light-emitting diode to descend.In addition, because the surface that the etching of vertical direction removes is vertical surface, the light that causes easily light-emitting diode to send causes light extraction efficiency to descend in semiconductor light-emitting elements the inside total reflection.
Summary of the invention
The invention provides a kind of semiconductor light-emitting elements and preparation method thereof, it has high light extraction efficiency.
One embodiment of the invention provide a kind of semiconductor light-emitting elements, comprise substrate, the first attitude doping semiconductor layer, luminescent layer, the second attitude doping semiconductor layer and optical microstructures layer.The first attitude doping semiconductor layer is configured on the substrate, comprises a basal part and a platform part, and this basal part has a upper surface, and platform part is configured on the upper surface of basal part.Luminescent layer is configured on the first attitude doping semiconductor layer.The second attitude doping semiconductor layer is configured on the luminescent layer.The optical microstructures layer is embedded in the first attitude doping semiconductor layer.
Another embodiment of the present invention provides a kind of manufacture method of semiconductor light-emitting elements, comprises the following steps.Substrate is provided; At substrate growth the first attitude doped semiconductor materials, to form the basal part of the first attitude doped semiconductor; Basal part at the first attitude doped semiconductor forms patterning growth barrier layer, makes patterning growth barrier layer cover the second portion of the first attitude doping semiconductor layer, and exposes the first of the first attitude doping semiconductor layer; Continue the first attitude doped semiconductor materials of growing up in first, to form the platform part of the first attitude doped semiconductor; Platform part at the first attitude doped semiconductor forms luminescent layer; Form the second attitude doping semiconductor layer at luminescent layer.
Based on above-mentioned, embodiments of the invention are by changing shape and the structure of the first attitude doping semiconductor layer, for example provide the platform part that the first attitude doping semiconductor layer tilts, to reduce the light probability that total reflection causes light extraction efficiency to descend inside semiconductor light-emitting elements that light-emitting diode was sent, promote whereby light extraction efficiency.Or provide the optical microstructures layer that is embedded in the platform part, light characteristic to change.In an embodiment of the present invention, because the basal part at the first attitude doped semiconductor forms patterning growth barrier layer to block the growth of part the first attitude doped semiconductor materials, therefore can form the platform part of the first attitude doped semiconductor by whole growth the first attitude doping semiconductor layer and then in etched mode, but can directly on the subregion, directly form platform part, luminescent layer and the second attitude doping semiconductor layer of the first attitude doped semiconductor.Thus, just can effectively reduce the stress of platform part, luminescent layer and the second attitude doping semiconductor layer of the first attitude doped semiconductor, and then promote the of heap of stone brilliant quality of platform part, luminescent layer and the second attitude doping semiconductor layer of the first attitude doped semiconductor.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate accompanying drawing to be described in detail below.
Description of drawings
Figure 1A to Fig. 1 F illustrates the generalized section into the making flow process of the semiconductor light-emitting elements of one embodiment of the invention;
Fig. 2 is the schematic top plan view of the semiconductor light-emitting elements of one embodiment of the invention;
Fig. 3 to Fig. 6 illustrates the schematic top plan view of various variations of the optical microstructures layer of Fig. 1 F;
Fig. 7 is the generalized section of the semiconductor light-emitting elements that proposes of one embodiment of the invention;
Fig. 8 is the generalized section of the semiconductor light-emitting elements that proposes of another embodiment of the present invention;
Fig. 9 illustrates the schematic top plan view of another variation of the optical microstructures layer of Fig. 1 F;
Figure 10 illustrates the schematic top plan view of other variations of the optical microstructures layer of Fig. 1 F;
Figure 11 is the generalized section of the semiconductor light-emitting elements that proposes of another embodiment of the present invention.
Description of reference numerals:
100: semiconductor light-emitting elements;
110: substrate;
The basal part of 120: the first attitude doped semiconductors;
120a: first;
120b: second portion;
The platform part of 121: the first attitude doped semiconductors;
122: the first attitude doping semiconductor layers;
130: patterning growth barrier layer;
140: the optical microstructures layer;
141,141a, 141b, 141c, 141d, 141e, 141f: optical microstructures;
142: fluorophor;
150: luminescent layer;
160: the second attitude doping semiconductor layers;
170: the first electrodes;
180: the second electrodes;
710: the distributed Bragg reflector;
S1: end face;
S2: side wall surface;
S3: upper surface;
θ: angle;
A-A ': hatching line.
Embodiment
Figure 1A～Fig. 1 F illustrates the generalized section into the making flow process of the semiconductor light-emitting elements of one embodiment of the invention.
Please first with reference to Figure 1A, at first, first at substrate 110 growth the first attitude doped semiconductor materials, with the basal part 120 that forms the first attitude doped semiconductor, wherein, substrate 110 for example is silicon substrate, copper base, carborundum (silicon carbide, SiC) substrate or sapphire (sapphire) substrate, and the first attitude doped semiconductor materials for example is n type gallium nitride (gallium nitride, GaN).
Please refer to Figure 1B, after the basal part 120 of the first attitude doped semiconductor of growing up, basal part 120 at the first attitude doped semiconductor forms patterning growth barrier layer 130 again, make patterning growth barrier layer 130 cover the second portion 120b of the basal part 120 of the first attitude doped semiconductor, and expose the 120a of first of the first attitude doping semiconductor layer, wherein the material of patterning growth barrier layer 130 for example is silicon dioxide (silicon dioxide, SiO
2) or aluminium nitride (aluminium nitride, AlN).
Please refer to Fig. 1 C, in the present embodiment, after growth patterning growth barrier layer 130, can form optical microstructures layer 140 at the 120a of first, wherein optical microstructures layer 140 can be through single exposure again etching form, its material for example is the material of not cracking of high temperature, for example is silicon dioxide (silicon dioxide, SiO
2) or aluminium nitride (aluminium nitride, AlN).In other embodiments, also can not form optical microstructures layer 140 at the 120a of first.In addition, in the present embodiment, optical microstructures layer 140 can comprise a plurality of discontinuous optical microstructures 141.In addition, optical microstructures 141 can further comprise fluorophor 142.Fluorophor can send the light of longer wavelength after the exciting of the light that is subject to shorter wavelength, wherein behind the fluorophor irradiation color of the fluorescence that sends for example for red, green or blue.
Please refer to Fig. 1 D, after growth optical microstructures layer 140, then continue the first attitude doped semiconductor materials of growing up at the 120a of first, with the platform part 121 that forms the first attitude doped semiconductor, wherein optical microstructures layer 140 is embedded between the platform part 121 and the 120a of first of the first attitude doped semiconductor.Therefore, the basal part 120 of the platform part 121 of the first attitude doped semiconductor and the first attitude doped semiconductor forms one first attitude doping semiconductor layer 122.In addition, the platform part 121 of the first attitude doped semiconductor has an end face S1 and a side wall surface S2, and the upper surface S3 of the basal part 120 of side wall surface S2 connection end face S1 and the first attitude doped semiconductor, and wherein side wall surface S2 tilts with respect to upper surface S3.In the present embodiment, the angle θ that side wall surface S2 tilts with respect to upper surface S3 for example is greater than 0 degree and less than 90 degree, namely the section of platform part 121 is a trapezoidal shape.Yet in other embodiments, the folded angle θ of side wall surface S2 and upper surface S3 also can be essentially 90 degree.
In addition, it is worth mentioning that, this case is formed on the 120a of first because of optical microstructures layer 140 in advance, the platform part 121 of the first attitude doped semiconductor of the first attitude doping semiconductor layer 122 then just begins to grow up, this moment is because brilliant (the Epitaxial lateral overgrowth of heap of stone that laterally grows up again, ELOG) secondary growth effect, it can reduce the stress that the first doping attitude semi-conducting material bears, so present embodiment can have low stacking fault (stacking defaults) or poor row's (dislocation) situation to occur, and then improving luminous efficiency.
Then, please refer to Fig. 1 D and Fig. 1 E, form luminescent layer 150 at the first attitude doping semiconductor layer 122, and form the second attitude doping semiconductor layer 160 at luminescent layer 150, wherein luminescent layer 150 for example is quantum well (quantum well) layer or multiple quantum trap (multiple quantum well, MQW) layer, and the material of the second attitude doping semiconductor layer 160 for example is P type gallium nitride.In another embodiment, can also be that the first attitude doped semiconductor materials is P type gallium nitride, and the material of the second attitude doping semiconductor layer 160 be n type gallium nitride.
It is worth mentioning that because side wall surface S2 tilts with respect to upper surface S3, therefore, when being incident to side wall surface S2 by the light of luminescent layer 150 outgoing, its incident angle can be less than critical angle direct emitting side wall S2.In more detail, the angle θ that this case can be tilted with respect to upper surface S3 by changing side wall surface S2, the problem that the light extraction efficiency that improvement produces because of total reflection descends.
Then, please refer to Fig. 1 F, after forming luminescent layer 150 and the second attitude doping semiconductor layer 160, then remove patterning growth barrier layer 130, and form the first electrode 170 and the second electrode 180 at second portion 120b and the second attitude doping semiconductor layer 160 respectively.The material of the first electrode 170 and the second electrode 180 be electric conducting material with simple layer or multilayer conductive material stacks, wherein electric conducting material for example is the combination of gold, titanium, aluminium, chromium, platinum, other electric conducting materials or these materials.In addition, one one be can advance between electrode of the present invention and the semiconductor layer and the material of high electrical conductivity or the material of tool ohmic contact comprised, and the first electrode 170 of the present invention and the second electrode 180 can be respectively material or the material of tool ohmic contact by the high electrical conductivity second portion 120b and the second attitude doping semiconductor layer 160 that are electrically connected to the first attitude doping semiconductor layer 122, but the present invention is not limited with above-mentioned.So far, semiconductor light-emitting elements 100 as above-mentioned mode are finished, and it comprises substrate 110, the first attitude doping semiconductor layer 122 (comprising the platform part 121 of the first attitude doped semiconductor and the basal part 120 of the first attitude doped semiconductor), optical microstructures layer 140, luminescent layer 150 and the second attitude doping semiconductor layer 160.In the present embodiment, semiconductor light-emitting elements 100 can also comprise the first above-mentioned electrode 170 and the second electrode 180.
It is worth mentioning that, because patterning growth barrier layer 130 is formed on the basal part 120 of the first attitude doped semiconductor (reserving the position of the first electrode 170), therefore compared to prior art whole the first attitude doped semiconductor that the growth area is larger on substrate, the suffered stress of the semiconductor light-emitting elements of this case 100 is little than prior art.
Fig. 2 is the schematic top plan view of the semiconductor light-emitting elements of one embodiment of the invention, and above-mentioned Fig. 1 F is the cross-sectional view along the A-A ' hatching line of Fig. 2.As shown in Figure 2, the upper configuration of second portion 120b the first electrode 170, its adjacent side is respectively platform part 121, luminescent layer 150, the second attitude doping semiconductor layer 160 and second electrode 180 of the first attitude doped semiconductor from the bottom to top.
Fig. 3 to Fig. 6 illustrates the schematic top plan view of various variations of the optical microstructures layer of Fig. 1 F, graphicly be easier to allow the reader understand in order to make, Fig. 3 to Fig. 6 all omits other retes of platform part 121 tops of the first attitude doped semiconductor of semiconductor light-emitting elements 100 and do not draw, to allow the reader directly see the optical microstructures layer 140 of platform part 121 belows of the first attitude doped semiconductor.The structure of above-mentioned optical microstructures layer 140 and shape can have following multiple variation, and for example Fig. 3 to Fig. 6 illustrates.
Specifically, Fig. 3 is the schematic top plan view of Fig. 1 F.Please refer to Fig. 3, optical microstructures layer 140 for example is made of the optical microstructures 141 that is column, and the arrangement of optical microstructures 141 is for example for being evenly distributed in fact, and wherein the profile of optical microstructures 141 can be with reference to Fig. 1 F.Please refer to Fig. 4, in another embodiment, the face number density of at least part of optical microstructures 141a in the optical microstructures layer 140 changes along with the difference of position, for example be in optical microstructures layer 140, optical microstructures 141a is presented by close density distribution to thin gradual change type to the subtend side by a side.Please refer to Fig. 5, the shape of optical microstructures 141b for example is to be strip.Please refer to Fig. 6, the shape of optical microstructures 141c for example is to be island.
Fig. 7 is the generalized section of the semiconductor light-emitting elements that proposes of one embodiment of the invention.Please refer to Fig. 7, the shape of optical microstructures 141d for example is to be point-like, and its schematic top plan view is similar to Fig. 3.And in another embodiment, the distribution of optical microstructures 141d for example is as shown in Figure 4, in optical microstructures layer 140, is presented by close density distribution to thin gradual change type to the subtend side by a side.Fig. 8 is the generalized section of the semiconductor light-emitting elements that proposes of another embodiment of the present invention.Please refer to Fig. 8, the shape of optical microstructures 141e for example is to be circular cone or polygonal vertebra shape, and its schematic top plan view is similar to Fig. 3.And in another embodiment, the distribution of optical microstructures 141e for example is as shown in Figure 4, in optical microstructures layer 140, is presented by close density distribution to thin gradual change type to the subtend side by a side.Perhaps, in Fig. 9, the optical microstructures layer can comprise the combination in any of optical microstructures 141a, 141b, 141c, 141d and 141e.The light that structure or density by modulation different optical microstructured layers 140 can increase random scatter (random scattering), or produce the light shape of institute's wish output.Moreover as shown in figure 10, optical microstructures layer 140 of the present invention also can be the optical microstructures 141f of a continous way.In addition, also can change the path that electric current is flowed through by the position of modulation different optical microstructured layers 140, thereby improve electric current in the prior art and too concentrate on sub-fraction zone between two electrodes, inhomogeneous too the concentrating with heat of the bright dipping that causes and cause that heat radiation is difficult for, semiconductor light-emitting elements damages easily and luminous efficiency under the degradation shortcoming.
In addition, above-mentioned optical microstructures layer 140 in another embodiment, as shown in figure 11, also replaceable is distributed Bragg reflector 710 (Distributed Bragg Reflector, DBR), wherein distributed Bragg reflector 710 is for increasing the sandwich construction of reflectivity, its material comprises the material of more than one high index of refraction, with more than one the material of low-refraction, cooperate with optically coated mode stacked combination to form, high-index material for example is tantalum pentoxide (Ta again
2O
5), titanium dioxide (TiO
2), five oxidation Tritanium/Trititanium (Ti
3O
5) or niobium pentaoxide (Nb
2O
5), and low-index material for example is silicon dioxide (SiO
2) or magnesium fluoride (MgF
2).In other embodiments, optical microstructures layer 140 also can be the combination in optical microstructures 141, distributed Bragg reflector 710.
It is worth mentioning that because the fluorescent material that existing white light emitting diode technology is sent sodium yellow take blue LED chip collocation is as main, the luminous intensity of the red spectral band that it produces a little less than, so the more colder tone of light that shows.One embodiment of the invention can promote the luminous intensity of red spectral band by can send the fluorescent material of ruddiness in the 140 interior interpolation of optical microstructures layer, and then promote the color rendering of semiconductor light-emitting elements 100.For example be in optical microstructures layer 140, to add the fluorescent material that sends yellow and red light, and the blue-light excited yellow fluorescent powder that the luminescent layer 150 that utilizes semiconductor light-emitting elements 100 sends, wherein blue light and gold-tinted can be mixed into white light, the ruddiness that blue-light excited red fluorescence powder produces then can promote the luminous intensity of red spectral band, promotes whereby color rendering.In addition, in another embodiment, luminescent layer 150 also can be designed to send ultraviolet light, and fluorescent material can comprise redness, green and blue colour fluorescent powder, and so ultraviolet light can inspire ruddiness, green glow and blue light, and the light of these three kinds of colors can be mixed into white light.
In sum, the semiconductor light-emitting elements that embodiments of the invention propose and manufacture method thereof are improved the problem that total reflection that the prior art vertical surface causes causes light extraction efficiency to descend by the platform part angle of inclination that the first attitude doped semiconductor is provided.In addition, reduce the stress that semiconductor light-emitting elements bears when the processing procedure by patterning growth barrier layer.Moreover by optical microstructures, the stacking fault or the poor situation of arranging that reduce in the brilliant process of heap of stone occur, and then improving luminous efficiency.In addition, by adding fluorescent material in semiconductor light-emitting elements, increase the color rendering of output light, or utilize the distributed Bragg reflector to increase the light of reflectivity and random scatter, promote light extraction efficiency.Moreover, by shape, density or the position of modulation different optical micro-structural, increase random scatter light, produce institute's wish output light shape with improve that bright dipping is inhomogeneous in the prior art, heat radiation is difficult for, damage easily and luminous efficiency under the degradation shortcoming.
It should be noted that at last: above each embodiment is not intended to limit only in order to technical scheme of the present invention to be described; Although with reference to aforementioned each embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps some or all of technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the scope of various embodiments of the present invention technical scheme.
Claims (18)
1. a semiconductor light-emitting elements is characterized in that, comprising:
Substrate;
The first attitude doping semiconductor layer is configured on this substrate, comprises basal part and platform part, and this basal part has upper surface, and this platform part is configured on the upper surface of this basal part;
Luminescent layer is configured on this first attitude doping semiconductor layer;
The second attitude doping semiconductor layer is configured on this luminescent layer; And
The optical microstructures layer is embedded in this first attitude doping semiconductor layer.
2. semiconductor light-emitting elements according to claim 1, wherein this platform part has end face and side wall surface.
3. semiconductor light-emitting elements according to claim 2, this side wall surface wherein connects this upper surface of this end face and this basal part.
4. semiconductor light-emitting elements according to claim 3, wherein this side wall surface with respect to the angle of inclination of this upper surface of this basal part greater than 0 degree and less than 90 degree.
5. semiconductor light-emitting elements according to claim 1, wherein the section of this platform part is trapezoidal shape.
6. semiconductor light-emitting elements according to claim 1, wherein this luminescent layer is configured on this platform part.
7. semiconductor light-emitting elements according to claim 1, wherein this optical microstructures layer is embedded between this platform part and this basal part.
8. semiconductor light-emitting elements according to claim 1, wherein this optical microstructures layer comprises a plurality of discontinuous optical microstructures.
9. semiconductor light-emitting elements according to claim 1, wherein this optical microstructures layer comprises the optical microstructures of continous way.
10. semiconductor light-emitting elements according to claim 8, wherein these a plurality of optical microstructures are strip, point-like, island, column, taper or its combination.
11. semiconductor light-emitting elements according to claim 8, wherein the face number density of at least part of these a plurality of optical microstructures changes along with the difference of position.
12. semiconductor light-emitting elements according to claim 8, wherein these a plurality of optical microstructures are evenly distributed in fact.
13. semiconductor light-emitting elements according to claim 1, wherein this optical microstructures layer is the distributed Bragg reflector.
14. semiconductor light-emitting elements according to claim 1 wherein comprises fluorophor in this optical microstructures layer.
15. the manufacture method of a semiconductor light-emitting elements is characterized in that, comprising:
Substrate is provided;
At this substrate growth the first attitude doped semiconductor materials, to form the basal part of the first attitude doped semiconductor;
Basal part at this first attitude doped semiconductor forms patterning growth barrier layer, and this patterning growth barrier layer exposes the first of this first attitude doped semiconductor material layer, and covers the second portion of this first attitude doped semiconductor material layer;
Continue this first attitude doped semiconductor materials of growing up in this first, to form the platform part of the first attitude doped semiconductor;
Form luminescent layer in this first attitude doped semiconductor platform part; And
Form the second attitude doping semiconductor layer at this luminescent layer.
16. the manufacture method of semiconductor light-emitting elements according to claim 15 also comprises:
After forming this patterning growth barrier layer and before this first continues to grow up this first attitude doped semiconductor materials, form the optical microstructures layer in this first.
17. the manufacture method of semiconductor light-emitting elements according to claim 16 wherein comprises and makes this first attitude doped semiconductor materials cover this optical microstructures layer in this first continue to grow up step of this first attitude doped semiconductor materials.
18. the manufacture method of semiconductor light-emitting elements according to claim 15 also comprises:
After this luminescent layer forms this second attitude doping semiconductor layer, remove this patterning growth barrier layer; And
Form the first electrode and the second electrode at this second portion and this second attitude doping semiconductor layer respectively.
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| WO2021197101A1 (en) * | 2020-04-03 | 2021-10-07 | 华为技术有限公司 | Led device and manufacturing method therefor, display module, and terminal |
| CN115188875A (en) * | 2022-09-13 | 2022-10-14 | 泉州三安半导体科技有限公司 | Light emitting device and light emitting element |
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Application publication date: 20131023 |