CN203013783U

CN203013783U - Hybrid unequal interval patterned substrate

Info

Publication number: CN203013783U
Application number: CN 201220698867
Authority: CN
Inventors: 张帆; 吴永胜
Original assignee: JIANGSU XINGUANGLIAN TECHNOLOGY Co Ltd
Current assignee: JIANGSU XINGUANGLIAN TECHNOLOGY Co Ltd
Priority date: 2012-12-17
Filing date: 2012-12-17
Publication date: 2013-06-19
Anticipated expiration: 2022-12-17

Abstract

The utility model relates to a hybrid unequal interval patterned substrate. The hybrid unequal interval patterned substrate comprises a basic substrate and is characterized in that a front face of the basic substrate is etched to form projection periods which are arranged in an array manner; each projection period comprises at least two projections which are in different sizes and shapes; the projections may be in a hemispheric shape, a conical shape or a pyramid shape, and diameters of the projection is 0.1 to 100 [miu]m; distances between projections in the same projection period are unequal; and the basic substrate may be a sapphire substrate or a silicon carbide substrate. According to the hybrid unequal interval patterned substrate, multiple projections which are in different sizes and are arranged in unequal distances on a surface of the substrate and an inclined angle that light extends outwards an outgoing light surface after reflection is changed to a greater degree, the generation of full reflection is maximally reduced, and overall light-emitting efficiency is improved by 3 percents to 10 percents than that of a patterned substrate in the prior art.

Description

Mixed type unequal-interval patterned substrate

Technical field

The utility model relates to a kind of patterned substrate, especially a kind of mixed type unequal-interval patterned substrate.

Background technology

Using patterned substrate to substitute the conventional planar substrate, is present a kind of more common method that promotes the LED chip external quantum efficiency.

as shown in Figure 1, because of the material of epitaxial loayer 2a and the material of the substrate 1a under epitaxial loayer 2a, the epoxide resin material of epitaxial loayer 2a upper (exiting surface) or the optical refractive index of air are different, therefore when the PN junction of epitaxial loayer 2a is luminous, its light that sends some light when the contact-making surface (exiting surface) of arrival and epoxy resin or air can cause too greatly occurring at this interface total reflection at this directive epitaxial loayer 2a lower surface because of incident angle, epitaxial loayer 2a lower surface can be reflected back upper surface with original angle again with light again, reflection repeatedly cause light in epitaxial loayer repeatedly motion reduced light quantum and namely reduced external quantum efficiency from the ratio that epitaxial loayer penetrates.The principle that patterned substrate promotes external quantum efficiency is, with the interface of epitaxial loayer and the substrate reflecting surface as an optics, the interface on script plane is made as the configuration of surface with regular projection, the light of light exit direction after its reflection of arrival epitaxial loayer lower surface generation reflex time and the angle angle of upper surface are changed, reduce total reflection, minimizing light order of reflection and then the minimizing light own loss texts in epitaxial loayer thereby reach.Its final goal is to reduce the loss that light moves in epitaxial loayer, promotes the probability that light penetrates epitaxial loayer, promotes the external quantum efficiency of LED chip, finally promotes the luminous efficiency of LED chip.As shown in Figure 2 and Figure 3, a kind of patterned substrate is arranged in prior art, to form some protruding 4a with array format on the surface of basic substrate 3a, equal evenly distributed of big or small identical, the spacing of projection 4a, although the patterned substrate of this structure can be avoided the generation of total reflection to a certain extent, effect is not clearly.

Summary of the invention

The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of mixed type unequal-interval patterned substrate is provided, and can change to a greater degree the angle of light extension exiting surface after reflection, reduces to greatest extent the generation of total reflection.

The technical scheme that provides according to the utility model, described mixed type unequal-interval patterned substrate, comprise basic substrate, it is characterized in that: form protruding cycle with array format in the positive etching of described basic substrate, described each projection cycle comprises the projection that at least two sizes, shape differ.

Being shaped as of described projection is hemispherical, semielliptical shape, coniform or pyramidal.The diameter of described projection is 0.1 ~ 100 μ m.Distance between projection in the same projection cycle is not equidistant.Described basic substrate adopts Sapphire Substrate or silicon carbide substrates.The height of described projection is 0.1 ~ 100 μ m.Distance between adjacent protrusion is 0.1 ~ 100 μ m.

The utility model adopts some projections not of uniform size of equidistantly not arranging on the surface of substrate, change to a greater degree the angle of light extension exiting surface after reflection, reduce to greatest extent the generation of total reflection, the patterned substrate of the comparable prior art of whole lighting efficiency promotes 3% ~ 10%.

Description of drawings

Fig. 1 is the schematic diagram that full emission occurs the conventional planar substrate.

Fig. 2 is the generalized section of patterned substrate in prior art.

Fig. 3 is the vertical view of patterned substrate in prior art.

Fig. 4 is the generalized section of a kind of embodiment of patterned substrate described in the utility model.

Fig. 5 is the vertical view of Fig. 4.

Fig. 6 is the generalized section of the another kind of embodiment of patterned substrate described in the utility model.

Fig. 7 is the vertical view of Fig. 6.

Embodiment

The utility model is described in further detail below in conjunction with concrete accompanying drawing.

As Fig. 4 ~ shown in Figure 7: patterned substrate described in the utility model comprises basic substrate 1, and basic substrate 1 adopts Sapphire Substrate, silicon carbide substrates or other substrates; Form protruding cycle 2 with array format in the positive etching of described basic substrate 1; Described each projection cycle 2 comprises the protruding 2b that at least two sizes, shape differ, and being shaped as of protruding 2b is hemispherical, semielliptical shape, coniform or pyramidal, and the diameter of protruding 2b is 0.1 ~ 100 μ m;

As Fig. 4, shown in Figure 5, the distance between the protruding 2b in the same projection cycle 2 is not equidistant;

The height of described protruding 2b is 0.1 ~ 100 μ m; Distance between adjacent protrusion 2b is 0.1 ~ 100 μ m.

The preparation method of described patterned substrate comprises following processing step:

(1) make photolithography plate, some groups of light tight zones of design on photolithography plate, every group of light tight zone is comprised of a plurality of light tight circle not of uniform size, and the distance between light tight circle is not equidistant, and the remainder of photolithography plate is the light transmission part; The diameter of light tight circle is 0.1 ~ 100 μ m;

(2) to resist coating on the planar substrate of sapphire material or silicon carbide material, the gluing thickness of photoresist is 0.5 ~ 4 μ m, the photolithography plate that uses step (1) to obtain carries out exposure imaging, expose the zone that needs photoetching after exposure imaging on planar substrate, the light tight zone consistent with photolithography plate is covered by photoresist;

(3) planar substrate that step (2) is obtained is carried out the ICP etching, obtains patterned substrate.

Claims

1. mixed type unequal-interval patterned substrate, comprise basic substrate (1), it is characterized in that: form protruding cycle (2) with array format in the positive etching of described basic substrate (1), described each projection cycle (2) comprises the projection (2b) that at least two sizes, shape differ.

2. mixed type unequal-interval patterned substrate as claimed in claim 1, it is characterized in that: being shaped as of described projection (2b) is hemispherical, semielliptical shape, coniform or pyramidal.

3. mixed type unequal-interval patterned substrate as claimed in claim 1, it is characterized in that: the diameter of described projection (2b) is 0.1 ~ 100 μ m.

4. mixed type unequal-interval patterned substrate as claimed in claim 1 is characterized in that: the distance between the projection (2b) in same projection cycle (2) is not equidistant.

5. mixed type unequal-interval patterned substrate as claimed in claim 1, is characterized in that: described basic substrate (1) employing Sapphire Substrate or silicon carbide substrates.

6. mixed type unequal-interval patterned substrate as claimed in claim 1, it is characterized in that: the height of described projection (2b) is 0.1 ~ 100 μ m.

7. mixed type unequal-interval patterned substrate as claimed in claim 1, it is characterized in that: the distance between adjacent protrusion (2b) is 0.1 ~ 100 μ m.