CN104916609B - 半导体装置及楔形接合装置 - Google Patents
半导体装置及楔形接合装置 Download PDFInfo
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- CN104916609B CN104916609B CN201410450124.XA CN201410450124A CN104916609B CN 104916609 B CN104916609 B CN 104916609B CN 201410450124 A CN201410450124 A CN 201410450124A CN 104916609 B CN104916609 B CN 104916609B
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- abutment
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000009471 action Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 230000004913 activation Effects 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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- H01L2224/7825—Means for applying energy, e.g. heating means
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- H01L2924/38—Effects and problems related to the device integration
- H01L2924/381—Pitch distance
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-048845 | 2014-03-12 | ||
JP2014048845A JP2015173205A (ja) | 2014-03-12 | 2014-03-12 | 半導体装置及びワイヤボンディング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104916609A CN104916609A (zh) | 2015-09-16 |
CN104916609B true CN104916609B (zh) | 2018-02-02 |
Family
ID=54085566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410450124.XA Active CN104916609B (zh) | 2014-03-12 | 2014-09-05 | 半导体装置及楔形接合装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2015173205A (zh) |
CN (1) | CN104916609B (zh) |
TW (1) | TWI555103B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107731772B (zh) * | 2017-09-13 | 2020-08-04 | 北京无线电测量研究所 | 一种楔形键合引线加固结构和加固方法 |
JP2022037255A (ja) * | 2018-12-27 | 2022-03-09 | 田中電子工業株式会社 | ワイヤ封止体 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5465899A (en) * | 1994-10-14 | 1995-11-14 | Texas Instruments Incorporated | Method and apparatus for fine pitch wire bonding using a shaved capillary |
CN103534797A (zh) * | 2011-05-17 | 2014-01-22 | 株式会社新川 | 打线接合装置及接合方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56138932A (en) * | 1980-04-01 | 1981-10-29 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
JPS60113636U (ja) * | 1984-01-06 | 1985-08-01 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置 |
JPH1056030A (ja) * | 1996-08-08 | 1998-02-24 | Seiko Epson Corp | 半導体装置及びその製造方法 |
US7032311B2 (en) * | 2002-06-25 | 2006-04-25 | Eli Razon | Stabilized wire bonded electrical connections and method of making same |
DE202012013627U1 (de) * | 2011-09-30 | 2018-09-14 | Rohm Co., Ltd. | Halbleiterbauteil |
-
2014
- 2014-03-12 JP JP2014048845A patent/JP2015173205A/ja active Pending
- 2014-07-24 TW TW103125365A patent/TWI555103B/zh active
- 2014-09-05 CN CN201410450124.XA patent/CN104916609B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5465899A (en) * | 1994-10-14 | 1995-11-14 | Texas Instruments Incorporated | Method and apparatus for fine pitch wire bonding using a shaved capillary |
CN103534797A (zh) * | 2011-05-17 | 2014-01-22 | 株式会社新川 | 打线接合装置及接合方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104916609A (zh) | 2015-09-16 |
TWI555103B (zh) | 2016-10-21 |
JP2015173205A (ja) | 2015-10-01 |
TW201535549A (zh) | 2015-09-16 |
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