CN104885218A - 半导体装置、汽车 - Google Patents

半导体装置、汽车 Download PDF

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Publication number
CN104885218A
CN104885218A CN201280078050.0A CN201280078050A CN104885218A CN 104885218 A CN104885218 A CN 104885218A CN 201280078050 A CN201280078050 A CN 201280078050A CN 104885218 A CN104885218 A CN 104885218A
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Prior art keywords
control signal
temperature
electrode
semiconductor element
semiconductor device
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CN201280078050.0A
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CN104885218B (zh
Inventor
爱甲光德
荒木慎太郎
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
    • H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
    • H03L1/022—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only by indirect stabilisation, i.e. by generating an electrical correction signal which is a function of the temperature
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  • Engineering & Computer Science (AREA)
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Abstract

具有：半导体元件，其具有栅极，并由栅极电压进行控制；栅极驱动电路，其控制该栅极电压；电极，其与该半导体元件连接，流过该半导体元件的主电流；温度检测部，其检测该电极的温度；生成部，其基于由该温度检测部检测出的温度，生成在该电极的温度不超过预定的温度的范围内向该半导体元件提供最大的通电量的第1控制信号；以及比较部，其将该第1控制信号与为了控制该栅极电压而从外部传送的第2控制信号进行比较，选择能够抑制该电极的温度一方的控制信号即选择控制信号。而且，该栅极驱动电路根据该选择控制信号控制该栅极电压。

Description

半导体装置、汽车
技术领域
本发明涉及一种在高电压、大电流的通断等中使用的半导体装置以及具有该半导体装置的汽车。
背景技术
在专利文献1中，公开了一种通过焊料等将半导体元件、集电极电极、发射极电极、以及栅极电极接合在绝缘基板上而成的电力用功率半导体模块。对于该电力用功率半导体模块，通过热电偶测定半导体元件以及各部件的温度，根据测定出的温度的变化，掌握接合界面的劣化以及装置的冷却状况。如果在接合界面产生龟裂并加深，则热阻增大，引起温度上升。由此，通过测定温度上升的程度，从而可知龟裂的加深状况。
专利文献1：日本特开平07－014948号公报
发明内容
在专利文献1所公开的结构中，半导体元件和电极可能成为高温。能够通过对半导体元件安装散热器等，从而容易地实现半导体元件的散热。但是，未安装散热器的电极难于进行散热。另外，在半导体装置中，电极的大部分被树脂覆盖，因此，使得热量易于滞留在电极以及电极的周边。由此，存在下述问题，即，为了将电极的温度保持为小于或等于预定的规格值，必须增大电极的尺寸。
本发明就是为了解决上述问题而提出的，其目的在于提供一种能够一边将电极的温度保持为小于或等于规格值、一边将电极小型化的半导体装置以及具有该半导体装置的汽车。
本申请的方案所涉及的半导体装置具有：半导体元件，其具有栅极，并由栅极电压进行控制；栅极驱动电路，其控制该栅极电压；电极，其与该半导体元件连接，流过该半导体元件的主电流；温度检测部，其检测该电极的温度；生成部，其基于由该温度检测部检测出的温度，生成在该电极的温度不超过预定的温度的范围内向该半导体元件提供最大的通电量的第1控制信号；以及比较部，其将该第1控制信号与为了控制该栅极电压而从外部传送的第2控制信号进行比较，选择能够抑制该电极的温度一方的控制信号即选择控制信号。而且，该栅极驱动电路根据该选择控制信号控制该栅极电压。
本发明的其他特征在下面进行明示。
发明的效果
根据本发明，基于检测出的电极温度，改变控制信号以使得电极的温度不超过规格值，因此，能够一边将电极的温度保持为小于或等于规格值、一边将电极小型化。
附图说明
图1是本发明的实施方式1所涉及的半导体装置的图。
图2是表示树脂的内部的剖面图。
图3是表示本发明的实施方式1所涉及的半导体装置的动作的流程图。
图4是表示温度检测部的安装位置的变形例的剖面图。
图5是本发明的实施方式2所涉及的半导体装置的图。
图6是本发明的实施方式3所涉及的半导体装置的图。
图7是本发明的实施方式4所涉及的汽车的图。
具体实施方式
参照附图，对本发明的实施方式所涉及的半导体装置进行说明。有时对相同或者相对应的结构要素标注相同的标号，并省略重复说明。
实施方式1.
图1是本发明的实施方式1所涉及的半导体装置的图。该半导体装置具有基板10。基板10例如由散热板形成。在基板10上，例如通过焊料固定有半导体元件12。半导体元件12由在表面具有栅极12a和发射极12b的IGBT形成。在基板10上的半导体元件12的旁边，例如通过焊料固定有作为续流二极管起作用的二极管14。二极管14具有表面电极14a。
栅极12a经由导线20与栅极电极22连接。栅极电极22经由导线24与栅极驱动电路26连接。栅极驱动电路26是对栅极12a的栅极电压进行控制的部分。半导体元件12由该栅极电压进行控制。
在发射极12b和表面电极14a例如通过焊料固定有电极30。在电极30中流过半导体元件12的主电流。电极30具有从主电流路径分支出的分支部30a。在分支部30a安装有温度检测部40。温度检测部40由检测电极30的温度的热电偶形成。在基板10固定有电极32。电极32经由基板10与半导体元件12的背面的集电极电连接。
半导体元件12、二极管14、栅极电极22、以及电极30、32以使栅极电极22的一部分、以及电极30、32的一部分向外部露出的方式被树脂50覆盖。电极30、32为了与外部的母线连接，延伸至树脂50的外部。另外，所述的分支部30a以及温度检测部40露出至树脂50的外部。
温度检测部40经由导线42与控制部60连接。控制部60具有生成部60a、比较部60b、以及输出部60c。生成部60a是基于由温度检测部40检测出的温度，生成在电极30的温度不超过预定的温度(规格值)的范围内向半导体元件12提供最大的通电量的第1控制信号的部分。控制信号是决定半导体元件12的通电时间的信号，例如，是与应该通过桥臂实现的占空比以及通断相关的信号。
控制部60经由导线62与上级系统70连接。上级系统70是将用于控制栅极电压的第2控制信号传送至控制部60的部分。该上级系统70无需一定包含在本发明的实施方式1所涉及的半导体装置中。即，如果控制部60能够从“外部”接收信号，则上级系统70不是必须的。下面的实施方式也是同样的。比较部60b是将第1控制信号与第2控制信号进行比较，选择能够抑制电极32的温度一方的控制信号的部分。将由比较部60b选择出的控制信号称为“选择控制信号”。输出部60c是将该选择控制信号传送至栅极驱动电路26的部分。
图2是表示树脂50的内部的剖面图。半导体元件12在背面具有集电极12c。二极管14在背面具有背面电极14b。集电极12c和背面电极14b例如通过焊料固定在基板10的表面。在基板10的背面粘贴有绝缘片80。在基板10的背面隔着该绝缘片80固定有铜箔82。优选通过例如焊接、超声波接合、钎焊、熔接、或者粘合剂等在铜箔82处固定散热器。
说明本发明的实施方式1所涉及的半导体装置的动作。图3是表示本发明的实施方式1所涉及的半导体装置的动作的流程图。首先，通过温度检测部40检测电极30的温度(步骤S1)。温度检测部40是热电偶，因此，经由导线42将热电动势(电压信号)传送至控制部60。
然后，通过生成部60a对检测出的温度(热电动势)进行数字变换(步骤S2)。然后，基于数字变换后的热电动势，生成部60a生成第1控制信号(步骤S3)。在这里，生成部60a利用生成部60a所存储的电极30的形状等数据(下面，称为形状模型)而运算第1控制信号。作为形状模型所包含的参数，例如存在基板10的厚度、以及电极30的厚度、宽度、以及长度等。如上所述，第1控制信号是在电极30的温度不超过规格值的范围内向半导体元件12提供最大的通电量的信号。
然后，比较部60b将第1控制信号与第2控制信号进行比较，选择能够抑制电极32的温度一方的控制信号(选择控制信号)(步骤S5)。然后，输出部60c将该选择控制信号传送至栅极驱动电路26(步骤S6)。然后，栅极驱动电路26根据选择控制信号控制栅极电压。
然后，如果输出新的第2控制信号，则再次实施上述的工序，如果没有输出新的控制信号，则结束处理(步骤S7)。如上所述的一系列的动作至少在每次从上级系统70向控制部60发送第2控制信号时实施。更加优选的动作是，通过温度检测部40持续检测电极30的温度而始终持续更新第1控制信号，将最新的第1控制信号与第2控制信号进行比较。
根据本发明的实施方式1所涉及的半导体装置，在从上级系统70输出的第2控制信号会使电极30的温度高于规格值的情况下，能够不采用第2控制信号而通过第1控制信号控制半导体元件12。不选择第2控制信号而选择第1控制信号在实质上等于削减第2控制信号的通电量。由此，能够将电极30的温度保持为小于或等于规格值。而且，在本发明中，以使用小型的电极30为前提，因此，能够通过预先设定该小型的电极30的规格值，从而防止电极的温度超过规格值。由此，能够一边将电极的温度保持为小于或等于规格值、一边将电极小型化。
另外，关于由生成部60a生成的第1控制信号，为了尽可能实现上级系统70所希望的控制，优选在不超过规格值的范围内向半导体元件提供最大的通电量。由此，必须高精度地生成第1控制信号。在本发明的实施方式1所涉及的半导体装置中，使用生成部60a所存储的形状模型而生成第1控制信号，因此，电极30的温度的预测精度较高。由此，能够高精度地生成第1控制信号。
在本发明的实施方式1中，使用形状模型而生成了第1控制信号，但本发明不限定于此。例如，生成部60a也可以利用存储有与电极温度相对应的第1控制信号的映射(map)数据而生成第1控制信号。在该情况下，能够使用映射数据而根据电极温度立即生成第1控制信号，因此，无需进行运算。由此，能够加快处理。
图4是表示温度检测部的安装位置的变形例的剖面图。该半导体装置具有金属部90，该金属部90在树脂50内与电极30连接，一部分露出至树脂50的外部。另外，具有插座92，该插座92将金属部90的露出至树脂50的外部的部分作为触点。并且，温度检测部94形成为能够插入至插座92的形状。如上所述，仅通过将温度检测部94插入至插座92，就能够容易地检测电极30的温度。此外，也可以省略插座92而将温度检测部固定在金属部90。
本发明的实施方式1所涉及的半导体装置测定流过半导体元件12的主电流的电极的温度。由此，温度检测部不限定于分支部30a或者插座92内的金属部90，无论安装在流过主电流的电极的哪处均可。
如果温度检测部40能够检测温度，则不特别限定于热电偶。例如，温度检测部40也可以由热敏二极管形成。如果半导体元件12通过栅极电压控制接通/断开，则不特别限定于IGBT。例如，作为半导体元件12也可以利用功率MOSFET。此外，也能够将上述的各变形用于下面的实施方式。
实施方式2.
本发明的实施方式2所涉及的半导体装置与实施方式1所涉及的半导体装置的一致点较多，因此，将与实施方式1所涉及的半导体装置的不同点作为中心进行说明。图5是表示本发明的实施方式2所涉及的半导体装置的图。该半导体装置在检测电极30的温度的基础上，还检测半导体元件12的温度。
在半导体元件12的表面安装有元件温度检测部100。元件温度检测部100例如由热电偶形成。元件温度检测部100经由导线102与元件温度监视部104连接。元件温度监视部104具有第3控制信号生成部104a和输出部104b。第3控制信号生成部104a是基于由元件温度检测部100检测出的温度，生成在半导体元件12的温度不超过预定的温度(元件规格值)的范围内向半导体元件12提供最大的通电量的第3控制信号的部分。输出部104b是将第3控制信号传送至控制部60的部分。
说明本发明的实施方式2所涉及的半导体装置的动作。在比较部60b中，将第1控制信号、第2控制信号、以及第3控制信号进行比较。然后，选择这3个控制信号中的、能够将电极32的温度抑制得最低的控制信号作为选择控制信号。该选择控制信号是能够将半导体元件12的温度抑制得最低的控制信号。
根据本发明的实施方式2所涉及的半导体装置，通过利用选择控制信号控制半导体元件12，从而能够使得半导体元件12的温度不超过元件规格值、并且电极30的温度不超过规格值。由此，能够一边得到与实施方式1相同的效果、一边确保半导体元件12的可靠性。
实施方式3.
本发明的实施方式3所涉及的半导体装置与实施方式1所涉及的半导体装置的一致点较多，因此，将与实施方式1所涉及的半导体装置的不同点作为中心进行说明。图6是本发明的实施方式3所涉及的半导体装置的图。对于该半导体装置，控制部110与实施方式1不同。
控制部110基于由温度检测部40检测出的温度，变更为了控制栅极电压而从上级系统70传送的控制信号的内容，以使得电极30的温度不超过预定的温度(规格值)。该变更在从上级系统70传送至控制部110的控制信号会使电极的温度高于规格值的情况下进行。具体的变更内容例如是半导体元件12的通电电流的削减、或者通电时间(信号宽度)的削减。由温度检测部40检测出的温度越高，该削减量越大。而且，栅极驱动电路26按照由控制部110根据需要而变更后的控制信号控制栅极电压。
本发明的实施方式3所涉及的半导体装置以从上级系统70传送的控制信号为基础，对该控制信号进行变更，因此，能够一边简化控制部110的结构、一边得到与实施方式1的半导体装置相同的效果。
实施方式4.
本发明的实施方式4涉及一种汽车。本发明的实施方式4所涉及的汽车包含实施方式1的半导体装置。图7是本发明的实施方式4所涉及的汽车的图。该汽车是使用发动机200和电动机202这两者或者某一者而行驶的混合动力车辆。电动机202由逆变器204进行控制。逆变器204包含图1所说明的半导体装置。更具体地说，例如6个半导体元件12进行排列而形成3相交流逆变器。而且，电动机202由逆变器204所包含的半导体元件的主电流进行控制。
针对逆变器204的高电压是从高电压电源208经由继电器206供给的。针对栅极驱动电路26的低电压是从低电压电源210供给的。
另外，在汽车用功率模块的通电电流式样(pattern)中，存在通常时使用的脉冲通电模式、和电动机锁止时使用的DC通电模式。IGBT等半导体元件大多具有通过温度传感功能而抑制其发热的设计，因此，易于进行尺寸的优化。另一方面，如果基于DC通电模式的DC电流而设计电极(图1的电极30、32)，则存在无法避免电极大型化的问题。
然而，根据本发明的实施方式4所涉及的汽车，在DC通电模式这样的大电流时，能够通过控制部60的比较部60b选择第1控制信号，从而将电极温度保持为小于或等于规格值，因此，能够将电极小型化。由此，能够将汽车小型化。此外，本发明的实施方式4所涉及的汽车也可以采用实施方式2或3的半导体装置。
标号的说明
10基板，12半导体元件，12a栅极，12b发射极，12c集电极，14二极管，14a表面电极，14b背面电极，20、24、42、62导线，22栅极电极，26栅极驱动电路，30、32电极，30a分支部，40温度检测部，50树脂，60控制部，60a生成部，60b比较部，60c输出部，70上级系统，80绝缘片，82铜箔，90金属部，92插座，94温度检测部，100元件温度检测部，104元件温度监视部，104a第3控制信号生成部，104b输出部，110控制部，200发动机，202电动机，204逆变器。

Claims (8)

1.一种半导体装置，其特征在于，具有：
半导体元件，其具有栅极，并由栅极电压进行控制；
栅极驱动电路，其控制所述栅极电压；
电极，其与所述半导体元件连接，流过所述半导体元件的主电流；
温度检测部，其检测所述电极的温度；
生成部，其基于由所述温度检测部检测出的温度，生成在所述电极的温度不超过预定的温度的范围内向所述半导体元件提供最大的通电量的第1控制信号；以及
比较部，其将所述第1控制信号与为了控制所述栅极电压而从外部传送的第2控制信号进行比较，选择能够抑制所述电极的温度一方的控制信号即选择控制信号，
所述栅极驱动电路根据所述选择控制信号控制所述栅极电压。
2.根据权利要求1所述的半导体装置，其特征在于，
所述生成部利用所述电极的形状模型而生成所述第1控制信号。
3.根据权利要求1所述的半导体装置，其特征在于，
所述生成部利用存储有与所述电极的温度相对应的所述第1控制信号的映射数据而生成所述第1控制信号。
4.根据权利要求1至3中任一项所述的半导体装置，其特征在于，具有：
元件温度检测部，其安装于所述半导体元件；以及
第3控制信号生成部，其基于由所述元件温度检测部检测出的温度，生成在所述半导体元件的温度不超过预定的温度的范围内向所述半导体元件提供最大的通电量的第3控制信号，
在所述比较部中，将所述第1控制信号、所述第2控制信号、以及所述第3控制信号进行比较。
5.一种半导体装置，其特征在于，具有：
半导体元件，其具有栅极，并由栅极电压进行控制；
栅极驱动电路，其控制所述栅极电压；
电极，其与所述半导体元件连接，流过所述半导体元件的主电流；
温度检测部，其检测所述电极的温度；以及
控制部，其基于由所述温度检测部检测出的温度，变更为了控制所述栅极电压而从外部传送的控制信号的内容，以使得所述电极的温度不超过预定的温度，
所述栅极驱动电路根据由所述控制部变更后的控制信号而控制所述栅极电压。
6.根据权利要求1至5中任一项所述的半导体装置，其特征在于，
所述电极具有从主电流路径分支出的分支部，
所述温度检测部安装于所述分支部。
7.根据权利要求1至5中任一项所述的半导体装置，其特征在于，具有：
树脂，其以使所述电极的一部分露出至外部的方式，覆盖所述半导体元件和所述电极；
金属部，其在所述树脂内与所述电极连接，一部分露出至所述树脂的外部；以及
插座，其将所述金属部的露出至所述树脂的外部的部分作为触点，
所述温度检测部是能够插入至所述插座的形状。
8.一种汽车，其具有权利要求1至7中任一项所述的半导体装置。
CN201280078050.0A 2012-12-28 2012-12-28 半导体装置、汽车 Active CN104885218B (zh)

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