CN112020202A - 带有功率电子基板和接触元件的装置、功率电子单元和转换器 - Google Patents
带有功率电子基板和接触元件的装置、功率电子单元和转换器 Download PDFInfo
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Abstract
具有功率电子基板(2)和接触元件(3)的装置(1),所述功率电子基板(2)具有电绝缘的基板(4)和布置在所述基板(4)的一侧(5)上的导电的表面层(6),并且所述接触元件(3)的第一端(10)与所述表面层(6)电连接,所述接触元件(3)的第二端(11)与电导体(9)可连接或已连接,其中所述接触元件(3)由电阻合金形成。
Description
技术领域
本发明涉及一种具有功率电子基板和接触元件的装置,该功率电子基板具有电绝缘的基板和布置在基板的一侧上的导电表面层,该接触元件的第一端与该表面层电连接,并且该接触元件的第二端与电导体可连接或已连接。
另外,本发明涉及功率电子单元和转换器。
背景技术
功率电子基板用于固定功率半导体组件,其特点是具有高耐热性、高绝缘性和高散热性。这样的功率电子基板的一个例子是DCB(直接铜键合),其具有由陶瓷材料制成的电绝缘基板和布置在基板的一侧上的由铜制成的导电表面层。这样的功率电子基板通常通过接触元件与电导体连接,例如母线。
当使用这样的装置时,例如当在转换器中操作时,可能需要测量电流。为此通常使用分流器(分流电阻器)。将分流器作为组件布置在DCB上是众所周知的。这样的分流器作为单独的组件占用大量的安装空间并大量散热,这需要额外的消耗来冷却分流器。
发明内容
因此,本发明的目的是,提出一种在功率电子器件领域中可以不费力地并且节省空间地实现电流测量的可能性。
根据本发明,该目的可以通过具有功率电子基板和接触元件的装置来实现,其中,所述接触元件由电阻合金形成。
本发明基于以下思想:采用电阻合金制作用于将功率电子器件基板与电导体连接的接触元件,该电阻合金通常也适合用作制造分流器的材料。因此,可以省去作为单独组件的分流器,并且可以将分流器直接集成到接触元件中。因此,该接触元件还具有额外的用途,因为它可以同时用作分流器。
如此,省略了作为单独组件的分流器的额外的安装空间。此外,实际上已经提供的功率电子基板的冷却可以无需额外的措施用于冷却接触元件。分流器的额外的冷却结构由此可以去掉。因此,根本发明的装置有利地实现了电流测量,该电流测量节省了安装空间并且可以以很小的消耗来实现。
通常,导体路径形成在表面层中。这可以例如通过蚀刻来完成。根据本发明,在两个相邻的导体路径之间于表面层中形成凹口。功率电子基板可以进一步具有在基板的第一侧上的相对第二侧的第二表面层。关于第一表面层的所有实施方式也适用第二表面层。
本发明的电阻合金的特点是具有在宽温度范围内的低线性电阻温度系数,该系数尤其低于铜的系数。在本发明的装置中,优选的是,该电阻合金的线性电阻温度系数在20℃和105℃之间的温度范围内不大于1.0×10-3K-1,优选地不大于1.0×10-4K-1。
关于电阻合金的材料,在根据本发明的装置中,电阻合金优选具有至少50%重量的铜和至少5%重量且至多25%重量的锰的合金。该合金可以进一步包含至少0.1%重量和/或至多5%重量的镍和/或至少0.5%重量和/或至多5%重量的铝。典型的基于铜的电阻合金例如是CuMn13Al或CuMn12Ni
优选地,接触元件被设计为扁线。
在本发明的装置中,有利的是,接触元件的第一端与表面层形成粘结连接。也可以设置成,接触元件的第二端和电导体形成粘结连接。这种粘结连接可以通过超声波焊接可靠地产生。
特别优选的是,在表面层上形成电连接到接触元件的第一端的测量接触件。这种测量接触件可以在功率电子基板侧量取分流电压的电位,以便确定通过接触元件的电流的电流强度。
当然,本发明的装置还可以包括与接触元件的第二端电连接的电导体。
那么优选的是,在导体上形成与接触元件的第二端电连接的测量接触件。该测量接触件由此可以使得分流电压的另一电位能够在导体侧被量取。
优选地,导体也可以是母线。
优选地,设置一个或多个另外的接触元件,它们与第一接触元件并联连接。第一接触元件的所有设计可以类似地适用另外的接触元件。
优选地,基板由陶瓷材料制成。然后,通过功率电子基板可以实现DCB的显著优势。替代地,基板可以包括金属板,该金属板具有包括陶瓷材料的介电层。在这种情况下,基板的结构基本上近似于绝缘金属基板的结构。金属板可以由铝制成。介电层可以包括填充有陶瓷粉末的聚合物。
有利地,本发明的装置具有至少一个功率半导体,该至少一个功率半导体电连接至功率电子基板的表面层。功率电子基板和功率半导体可以理解为功率电子模块。
功率半导体装置可以包括一个或多个功率晶体管。此外,功率半导体装置可以包括一个或多个二极管,特别是这些二极管与功率晶体管反并联连接。功率半导体装置通常形成半桥。功率电子基板与功率半导体装置之间的导电连接优选地通过一根或多根接合线来实现。功率半导体装置可以借助于连接层(例如焊料或烧结层)附接到功率电子基板。
另外,本发明的目的还通过一种功率电子单元来实现,该功率电子单元包括多个装置,每个装置包括功率半导体装置。
此外,本发明的功率电子单元或本发明的装置可以具有基板,一个或多个功率电子基板可以以与功率半导体装置相对的一侧(特别是借助于接触层,例如焊料或烧结层)附接在基板上。此外,所述功率电子单元或所述装置可以具有散热器,所述基板以其与所述功率电子基板相对的一侧,特别是通过导热层装置,布置在散热器上。
此外,本发明目的还通过一种转换器来实现,该转换器包括具有本发明的功率半导体装置或功率电子单元的装置,该转换器具有控制装置,该控制装置被设置为控制至少一个功率半导体装置以进行功率转换。
优选地,转换器构造为逆变器,特别是用于驱动车辆的逆变器。但是,转换器也可以设计为整流器或变流器或直流电压转换器。
关于根据本发明的装置的所有描述可以类似地适用于根据本发明的功率电子单元和根据本发明的转换器,从而利用这些也可以实现上述优点。
附图说明
本发明的其他细节和优点由下面描述的实施例和附图得出。这些是示意图,并显示:
图1是根据本发明的装置的实施例的横截面的局部示意图;
图2是图1所示实施例的俯视图;
图3示出了根据本发明的功率电子单元的示例性实施例的横截面的示意图;和
图4是根据本发明的转换器的实施例的框图。
具体实施方式
图1是装置1的示例性实施例的横截面的示意图,该装置具有功率电子基板2和多个并联连接的接触元件3\,在图1中仅可见其中之一。
功率电子基板2具有电绝缘的基板4和布置在基板4的第一侧5上的导电的第一表面层6。另外,功率电子基板2还包括在基板4的与第一侧5相对的第二侧7上的第二导电表面层8。所述表面层6、8由铜或由包含按重量计至少95%的铜的合金形成。
接触元件3由扁线形成,并且以与装置1的电导体9电连接的状态示出。导体9是母线。各接触元件3的第一端部10与第一表面层6导电连接。各接触元件3的第二端部11与导体9导电连接。所述端部10、11与第一表面层6或与导体9的连接借助于通过超声波焊接形成的粘结连接12、13来实现。就这方面而言,接触元件也可以理解为接合线。
接触元件3由电阻合金形成,其特点是,其线性电阻温度系数在20℃至105℃之间的温度范围内不大于0.1×10-3K-1。电阻合金的材料是铜合金,该铜合金具有至少50%重量的铜和5%至25%重量的锰。其他成分可以是镍和/或铝。在本示例性实施例中,电阻合金是CuMn13Al或CuMn12Ni根据替代的示例性实施例,电阻合金是具有至少50%重量的镍和5%-30%重量的铬的镍合金,例如NiCr20AlSi
装置1还具有布置在第一端部10附近的第一测量接触件14和布置在第二端部11附近的第二测量接触件15。所述测量接触件14、15导电地连接到端部10、11。如果电流流过接触元件3,则在它们之间有分流电压,考虑到接触元件3的电阻和测量接触件14、15的位置,可以将其用于确定电流强度。由于由电阻合金形成的接触元件3使得分流器能够被集成到装置1中,因此可以省去常规设置的作为单独组件的分流器。
装置1具有另外的电导体16,其通过另外的接触元件17(在图1中仅可见一个)以与接触元件3类似的方式与第一表面层6连接。接触元件17由铜形成并且不用作分流器。但是原则上也可以考虑,将接触元件17设计成类似于接触元件3,并且将它们类似地用于电流测量。
功率电子基板2的基板4由陶瓷材料形成。功率电子基板2的结构因此基本上相当于DCB(直接铜键合)。根据另一示例性实施例,基板包括金属板,该金属板在至少一侧上被介电层包围。就此,功率电子基板2于是形成绝缘金属基板的基本结构。
此外,装置1具有功率半导体装置18,该功率半导体装置在图1中部分可见,并且通过连接层19(例如焊料或烧结层)固定在功率电子基板2的第一表面层6上。
图2是图1所示的装置1的俯视图,剖面线I-I表示图1所示的横截面。
可以看出,在功率电子基板2的第一侧5上形成有多个导体路径20。在两个相邻的导体路径20之间通过蚀刻形成第一表面层6的凹部21,并露出基板4。
在本示例性实施例中,功率半导体装置18包括并联连接的三个第一功率晶体管22和同样并联连接的三个第二功率晶体管23,它们以形成半桥的方式与第一功率晶体管22连接。功率晶体管22、23例如可以分别是绝缘栅双极型晶体管(IGBT)或功率MOSFET。另外,功率半导体装置3具有与相应的功率晶体管22、23反并联连接的多个二极管24。功率半导体装置3或功率晶体管22、23和二极管24通过接合线25彼此导电连接并且与第一表面层6的导体路径20导电连接。应当注意的是,接合线25比接触元件3细得多。
装置1还具有另外的同样以母线的形式的电导体26,其通过另外的接触元件27导电地连接到第一表面层6。根据另外的示例性实施例,代替或除了接触元件3之外,接触元件27由电阻合金形成,并且在接触元件27的区域中设置或有另外的测量元件。在这方面而言,所有先前的实施方式都可以适用到接触元件27。
图3是功率电子单元28的示例性实施例的横截面的示意图,该功率电子单元28具有多个(根据当前情况为三个)根据上述示例性实施例之一的装置1。
通常,每个装置1在第二表面层8上通过接触层29(例如,焊料或烧结层)连接到基板30,只要接触层29存在,则接触层29又通过由导热膏形成的导热层31连接到散热器32。
图4是转换器33的示例性实施例的框图,该转换器33具有根据图3的功率电子单元28或根据图1和2的示例性实施例中的一个以另一种方式布置的三个装置1。此外,转换器33包括控制装置34,该控制装置被设置成用于控制功率半导体装置3以进行功率转换。
转换器33在此例如作为逆变器示出,该逆变器将由直流电压源35通过电导体9、16提供的直流电压转换为三相交流电压。在输出侧,转换器33针对每个相经由导体26连接到耗电器,例如电驱动车辆的电驱动机36。
根据其他的实施例,转换器设计为有源整流器、变流器或直流转换器。
Claims (12)
1.一种具有功率电子基板(2)和接触元件(3)的装置(1),所述功率电子基板(2)具有电绝缘的基板(4)和布置在所述基板(4)的一侧(5)上的导电的表面层(6),并且所述接触元件(3)的第一端(10)与所述表面层(6)导电连接,所述接触元件(3)的第二端(11)与电导体(9)可连接或已连接,其特征在于,
所述接触元件(3)由电阻合金形成。
2.根据权利要求1所述的装置,其中,所述电阻合金的线性电阻温度系数在20℃和105℃之间的温度范围内不大于1.0×10-3K-1,
和/或,其中所述电阻合金是具有至少50%重量的铜和至少5%重量的锰且至多25%重量的锰的合金,或是具有至少50%重量的镍和至少5%重量的铬且至多30%重量的铬的合金。
3.根据权利要求1或2所述的装置,其中,所述接触元件(3)被设计为扁平线。
4.根据权利要求1至3中任一项所述的装置,其中,所述接触元件(3)的第一端(10)与所述表面层(6)形成粘结连接(13)。
5.根据权利要求1至4中任一项所述的装置,其中,在所述表面层(6)上形成与所述接触元件(3)的第一端(10)电连接的测量接触件(14)。
6.根据权利要求1至5中任一项所述的装置,还包括与所述接触元件(3)的第二端(11)电连接的导体(9)。
7.根据权利要求6所述的装置,其中,在所述导体(9)上形成与所述接触元件(3)的第二端(11)电连接的测量接触件(15)。
8.根据权利要求6或7所述的装置,其中,所述导体(9)是母线。
9.根据权利要求1至8中任一项所述的装置,其中,所述基板(4)由陶瓷材料形成或者包括具有介电层的金属板,所述介电层包括陶瓷材料。
10.根据权利要求1至9中任一项所述的装置,还包括至少一个功率半导体装置(18),所述至少一个功率半导体装置(18)导电地连接到所述功率电子基板(2)的表面层(6)。
11.功率电子单元(28),包括根据权利要求10所述的多个装置(1)。
12.一种转换器(33),包括至少一个根据权利要求10所述的装置(1)或根据权利要求11所述的功率电子单元(28),其中所述转换器(33)具有控制装置(34),所述控制装置(34)被设置成控制所述至少一个功率半导体装置(18)以控制功率转换。
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