CN104826641B - 一种多孔类石墨型氮化碳的制备方法 - Google Patents
一种多孔类石墨型氮化碳的制备方法 Download PDFInfo
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- CN104826641B CN104826641B CN201510230813.4A CN201510230813A CN104826641B CN 104826641 B CN104826641 B CN 104826641B CN 201510230813 A CN201510230813 A CN 201510230813A CN 104826641 B CN104826641 B CN 104826641B
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- galapectite
- yellow powder
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- carbon nitride
- pasty solid
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 13
- 239000010439 graphite Substances 0.000 title claims abstract description 13
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000000843 powder Substances 0.000 claims abstract description 33
- 235000011837 pasties Nutrition 0.000 claims abstract description 22
- 239000007787 solid Substances 0.000 claims abstract description 22
- 238000003756 stirring Methods 0.000 claims abstract description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 10
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229960000789 guanidine hydrochloride Drugs 0.000 claims abstract description 8
- PJJJBBJSCAKJQF-UHFFFAOYSA-N guanidinium chloride Chemical compound [Cl-].NC(N)=[NH2+] PJJJBBJSCAKJQF-UHFFFAOYSA-N 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000007864 aqueous solution Substances 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- 239000011259 mixed solution Substances 0.000 claims description 13
- 238000010306 acid treatment Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 230000018044 dehydration Effects 0.000 claims description 5
- 238000006297 dehydration reaction Methods 0.000 claims description 5
- 238000001291 vacuum drying Methods 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- HPTYUNKZVDYXLP-UHFFFAOYSA-N aluminum;trihydroxy(trihydroxysilyloxy)silane;hydrate Chemical compound O.[Al].[Al].O[Si](O)(O)O[Si](O)(O)O HPTYUNKZVDYXLP-UHFFFAOYSA-N 0.000 description 4
- 229910052621 halloysite Inorganic materials 0.000 description 4
- 239000002071 nanotube Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 241000446313 Lamella Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910052622 kaolinite Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011941 photocatalyst Substances 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
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CN105417508A (zh) * | 2015-12-29 | 2016-03-23 | 哈尔滨工业大学 | 一种大孔g-C3N4的制备方法 |
CN109701639B (zh) * | 2019-01-11 | 2021-08-03 | 江苏大学 | 一种氮掺杂碳基酸碱双功能固体催化剂及其制备方法 |
CN110639589B (zh) * | 2019-10-11 | 2022-06-24 | 常州纳欧新材料科技有限公司 | 一种一维纳米结构的氮化碳材料及其制备方法和应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102874777A (zh) * | 2012-09-28 | 2013-01-16 | 常州大学 | 一种高比表面介孔石墨相氮化碳材料及其制备方法 |
CN103623856A (zh) * | 2013-12-10 | 2014-03-12 | 福州大学 | 一种多级纳米结构的球状介孔氮化碳光催化剂 |
CN103935969A (zh) * | 2014-04-29 | 2014-07-23 | 常州大学 | 一种介孔石墨相氮化碳材料的制备方法 |
JP2014177378A (ja) * | 2013-03-14 | 2014-09-25 | Nissan Chem Ind Ltd | 多孔性カーボンナイトライドの製造方法 |
CN104326446A (zh) * | 2014-09-25 | 2015-02-04 | 常州大学 | 一种低成本介孔石墨相氮化碳的合成方法 |
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- 2015-05-07 CN CN201510230813.4A patent/CN104826641B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102874777A (zh) * | 2012-09-28 | 2013-01-16 | 常州大学 | 一种高比表面介孔石墨相氮化碳材料及其制备方法 |
JP2014177378A (ja) * | 2013-03-14 | 2014-09-25 | Nissan Chem Ind Ltd | 多孔性カーボンナイトライドの製造方法 |
CN103623856A (zh) * | 2013-12-10 | 2014-03-12 | 福州大学 | 一种多级纳米结构的球状介孔氮化碳光催化剂 |
CN103935969A (zh) * | 2014-04-29 | 2014-07-23 | 常州大学 | 一种介孔石墨相氮化碳材料的制备方法 |
CN104326446A (zh) * | 2014-09-25 | 2015-02-04 | 常州大学 | 一种低成本介孔石墨相氮化碳的合成方法 |
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Effective date of registration: 20231211 Address after: 562400 Ecological Energy Carrying Zone of Anlong Ecological Industrial Park, Qianxiang Street, Anlong County, Qiannan Buyi and Miao Autonomous Prefecture, Guizhou Province Patentee after: Guizhou Xinchuang Silicon Based New Material Technology Co.,Ltd. Address before: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee before: Dragon totem Technology (Hefei) Co.,Ltd. Effective date of registration: 20231211 Address after: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee after: Dragon totem Technology (Hefei) Co.,Ltd. Address before: Gehu Lake Road Wujin District 213164 Jiangsu city of Changzhou province No. 1 Patentee before: CHANGZHOU University |