CN104798186A - 半导体装置以及导线键合布线方法 - Google Patents

半导体装置以及导线键合布线方法 Download PDF

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Publication number
CN104798186A
CN104798186A CN201380060575.6A CN201380060575A CN104798186A CN 104798186 A CN104798186 A CN 104798186A CN 201380060575 A CN201380060575 A CN 201380060575A CN 104798186 A CN104798186 A CN 104798186A
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Prior art keywords
electrode
wire
lead
semiconductor element
composition surface
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CN201380060575.6A
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Inventor
小屋贤一
米仓勇
深町大辅
原野慎也
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Publication of CN104798186A publication Critical patent/CN104798186A/zh
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Abstract

在第一电极形成第一键合部，对于从该第一键合部进行布线的导线(6)，将毛细管(C)的顶端抵压到形成在第二电极的凸点(B)，形成转印了毛细管(C)的顶端的抵压面(S1)的形状的第二键合部(62)。相对于接合面(S2)的长度，导线(6)开始变细的第二键合部(62)的基端(P1)从一端(P21)进入凸点(B)侧10％以上，利用毛细管(C)切断导线(6)。

Description

半导体装置以及导线键合布线方法
技术领域
本发明涉及对电极彼此利用导线进行连接的半导体装置、以及导线键合布线方法。
背景技术
为了对分离的电极彼此进行导通连接，使用由金属细线形成的导线。该导线在一个电极形成球凸点之后，从另一个电极到球凸点进行布线。作为与这种导线的布线技术有关的内容，已知专利文献1、2所记载的内容。
专利文献1中记载了键合导线的接合构造，其中键合导线以及球凸点以铜为主要成分，在接合部的界面上，具有铜以外的金属的浓度是球凸点中的金属的平均浓度的10倍以上的浓化层，并且，在球凸点与电极的接合界面上，具有金属的浓度是球凸点中的金属的平均浓度的10倍以上的浓化层。
专利文献2中记载了半导体装置以及导线键合方法，其中，在第二键合点处折叠层积导线以形成凸点，朝着凸点使导线成环，通过毛细管顶端将导线按压到凸点，使导线与凸点接合，并且通过内倒角部向第一导线折叠凸部按压导线，形成了弓形截面形状的导线挤压部。
现有技术文献
专利文献
专利文献1：国际公开第2010/005086号
专利文献2：日本特开2008-235849号公报
发明内容
发明要解决的课题
在专利文献1记载的键合导线的接合构造中，作为导线布线材料的主要成分使用了铜，但导线布线材料为铜或一般使用的金时，导线断线时的负载即断裂负载比较大。因此，在将导线锲形键合到凸点上的倾斜面上时，用于使导线直径变细的挤压开始位置若位于凸点的端部，则有时挤压截面不变细，拉起毛细管时未完全切断，成为细线从锲形部伸长的同时被拉起的状态，产生导线弯曲等。
另外，专利文献2记载的半导体装置以及导线键合方法中，在凸点的凸部上挤压并切断导线，形成导线挤压部，由此提高了导线的接合性和切断性，但在该导线键合方法中，锲形部的顶端部分向凸点的上表面的中央方向靠近，因此相反挤压开始位置(锲形部起点)过于接近凸点端部，存在无法在导线与凸点可得到更强接合的导线较粗部分进行接合的课题。
半导体装置中，对电极彼此进行连接的导线由树脂密封。对半导体装置加热后，由于由金属细线形成的导线与密封树脂的热膨胀的差别，使与凸点连接的导线脱落，或者使凸点的接续部分断线。因此，要求导线具有与凸点的较高的接合性。
对此，本发明的目的在于提供一种半导体装置以及导线键合方法，通过提高导线的接合性和切断性能够实现可靠性提高。
在本发明的一方式中，半导体装置具备对第一电极和形成了凸点的第二电极进行导通连接的至少一个导线，所述导线由以银为主材料的合金形成，并且在与所述第一电极的接合部处形成第一键合部，并在与所述第二电极的凸点的接合部处形成第二键合部，所述第二键合部成为顶端变细的形状，并且，在俯视下，所述导线开始变细的基端位于所述导线与所述凸点的接合面内，并且，在所述导线延伸的方向上，从所述接合面的端部到所述基端的所述导线的长度是所述接合面的长度的10％以上。
在本发明的其它方式中，导线键合布线方法在半导体装置中通过由以银为主材料的合金形成的导线对第一电极和第二电极进行导通连接，所述导线键合布线方法具备：第一工序，从毛细管的顶端的供给口供给出金属材料，按压在所述第一电极上，由此形成第一键合部；第二工序，从所述供给口供给出金属材料并同时使所述毛细管向所述第二电极的方向移动，由此形成导线环；以及第三工序，将所述毛细管的顶端抵压到形成在所述第二电极的凸点的接合面，由此形成第二键合部，在所述第三工序中，所述毛细管的顶端的抵压面的形状转印到所述第二键合部，所述第二键合部成为顶端变细的形状，并且，控制所述毛细管的位置，使得在俯视下所述导线开始变细的基端位于所述接合面内，并且，在所述导线延伸的方向上，从所述接合面的端部到所述基端的所述导线的长度成为所述接合面的长度的10％以上。
根据本发明，能够对第二键合部和凸点的接合面进行牢固地接合，因而能够提高对树脂制的密封部、金属制的导线的热膨胀的差别的耐久性，因此通过提高导线的接合性和切断性，能够实现可靠性的提高。
附图说明
图1是表示实施方式所涉及的发光装置的图，(A)是俯视图，(B)是主视图。
图2是说明对图1所示的发光装置的发光元件和引线框进行导通连接的导线的、导线键合的各工序的图，(A)是形成了凸点的状态的图，(B)是在形成第一键合部后，向凸点的方向进行布线的状态的图，(C)是在凸点上形成第二键合部并完成了布线的状态的图。
图3是用于说明形成第二键合部时的状态的放大图，(A)是表示锲形部起点位于下限值的状态的放大图，(B)是表示锲形部起点位于上限值的状态的放大图。
图4是表示锲形部起点的每个位置的等效应力的仿真结果和热冲击试验结果的图。
图5是基于导线的线径、导线的材质以及温度测定了断裂负载的图，(A)是导线的线径为23μm的情况的图，(B)是导线的线径为25μm的情况的图。
图6是表示在正极端子配置了两个发光元件的情况的一例发光装置的图，(A)是俯视图，(B)是主视图。
图7是表示在负极端子和正极端子分别配置了一个发光元件的情况的一例发光装置的图，(A)是俯视图，(B)是主视图。
具体实施方式
本发明的第一方式中，半导体装置具备将第一电极和形成了凸点的第二电极进行导通连接的至少一个导线，所述导线由以银为主材料的合金形成，并且在与所述第一电极的接合部处形成第一键合部，并在与所述第二电极的凸点的接合部处形成第二键合部，所述第二键合部成为顶端变细的形状，并且，在俯视下，所述导线开始变细的基端位于所述导线与所述凸点的接合面内，并且，在所述导线延伸的方向上，从所述接合面的端部到所述基端的所述导线的长度是所述接合面的长度的10％以上。
根据第一方式，导线由以银为主材料的合金形成，因此能够采用断裂负载比铜、金小的材料。另外，第二键合部为顶端变细的形状，并且，在导线延伸的方向上，导线开始变细的基端相对于接合面的长度进入凸点侧10％以上，因此能够使导线的线径较粗的部分位于凸点的接合面的足够内侧。因此，能够对包括第二键合部的导线顶端部与凸点的接合面进行牢固接合，因而能够提高对树脂制的密封部、金属制的导线的热膨胀的差别的耐久性。由此能够提高导线的接合性和切断性，因而能够提高半导体装置的可靠性。
本发明的第二方式在第一方式中具备半导体元件以及引线电极，所述导线包括对作为所述第一电极的所述引线电极和作为所述第二电极的第一元件电极进行导通连接的第一导线，所述第一元件电极形成在所述半导体元件的顶面，位于比所述引线电极高的位置。
根据第二方式，从位于低位置的引线电极到位于高位置的半导体元件的元件电极对导线进行布线，由此能够得到导线的布线高度较低的低环。
本发明的第三方式在第二方式中具备第二引线电极，所述半导体元件配置在所述第二引线电极上，并且在顶面形成有包括所述第一元件电极的一对元件电极，所述导线包括对作为所述第一电极的所述第二引线电极与作为所述第二电极的、所述半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第二导线。
根据第三方式，能够构成从在第二引线电极配置的半导体元件的一对元件电极到引线电极和第二引线电极分别对导线进行布线的半导体装置。
本发明的第四方式在第一方式中具备第一及第二半导体元件，所述导线包括第一导线，所述第一导线对作为所述第一电极的、在所述第一半导体元件的顶面形成的元件电极，与作为所述第二电极的、在所述第二半导体元件的顶面形成且与所述第一半导体元件的所述元件电极位于相同高度的位置的元件电极进行导通连接。
根据第四方式，第一半导体元件与第二半导体元件的元件电极即使位于相同高度，也能够提高导线的接合性。
本发明的第五方式在第四方式中具备第一及第二引线电极，所述第一及第二半导体元件分别配置在所述第二引线电极上，并且在顶面形成有包括所述元件电极的一对元件电极，所述导线包括：对作为所述第一电极的所述第一引线电极与作为所述第二电极的、所述第一半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第二导线；以及对作为所述第一电极的所述第二引线电极与作为所述第二电极的、所述第二半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第三导线。
根据第五方式，在第二引线电极上配置了第一及第二半导体元件的半导体装置中，除了对第一半导体元件的元件电极与第二半导体元件的元件电极进行连接的导线以外，对第一引线电极与第一半导体元件的元件电极进行连接的第二导线、以及对第二引线电极与第二半导体元件的元件电极进行连接的第三导线也能够提高接合性。
本发明的第六方式在第四方式中具备第一及第二引线电极，所述第一半导体元件配置在所述第一引线电极上，并且在顶面形成有包括所述元件电极的一对元件电极，所述第二半导体元件配置在所述第二引线电极上，并且在顶面形成有包括所述元件电极的一对元件电极，所述导线包括：对作为所述第一电极的所述第一引线电极与作为所述第二电极的、所述第一半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第二导线；以及对作为所述第一电极的所述第二引线电极与作为所述第二电极的、所述第二半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第三导线。
根据第六方式，在第一引线电极上配置了第一半导体元件并在第二引线电极上配置了第二半导体元件的半导体装置中，除了对第一半导体元件的元件电极与第二半导体元件的元件电极进行连接的导线以外，对第一引线电极与第一半导体元件的元件电极进行连接的第二导线、以及对第二引线电极与第二半导体元件的元件电极进行连接的第三导线也能够提高接合性。
本发明的第七方式是一种导线键合布线方法，在半导体装置中通过由以银为主材料的合金形成的导线对第一电极和第二电极进行导通连接，所述导线键合布线方法具备：第一工序，从毛细管的顶端的供给口供给出金属材料，按压在所述第一电极上，由此形成第一键合部；第二工序，从所述供给口供给出金属材料并同时使所述毛细管向所述第二电极的方向移动，由此形成导线环；以及第三工序，将所述毛细管的顶端抵压到在所述第二电极形成的凸点的接合面，由此形成第二键合部，其中，在所述第三工序中，所述毛细管的顶端的抵压面的形状被转印到所述第二键合部，所述第二键合部成为顶端变细的形状，并且，控制所述毛细管的位置，使得在俯视下所述导线开始变细的基端位于所述接合面内，并且，在所述导线延伸的方向上，从所述接合面的端部到所述基端的所述导线的长度在所述接合面的长度的10％以上。
根据第七方式，导线由以银为主材料的合金形成，因此能够采用断裂负载比铜、金小的材料。另外，第二键合部成为顶端变细的形状，并且，控制毛细管的位置，使得在导线延伸的方向上导线开始变细的基端相对于接合面的长度进入凸点侧10％以上，因此能够使导线的线径较粗的部分位于凸点的接合面的足够内侧。因此，能够对包括第二键合部的导线顶端部与凸点的接合面进行牢固接合，因而能够提高对树脂制的密封部、金属制的导线的热膨胀的差别的耐久性。由此能够提高导线的接合性和切断性，因而能够提高半导体装置的可靠性。
本发明的第八方式在第七方式中，在所述第三工序中，控制所述毛细管的位置，使得所述毛细管的顶端的供给口的缘部不脱离所述接合面。
根据第八方式，能够在接合面上切断形成导线的第二键合部的顶端。
(实施方式)
以发光装置为例，基于附图说明实施方式所涉及的半导体装置。
图1的(A)及(B)所示的发光装置1具备：作为基体的引线框2、作为一例半导体元件的发光元件3、封装部4、以及密封部5。
引线框2由金属薄板形成，由负极端子(引线电极)21和正极端子(第二引线电极)22构成。负极端子21通过导线6a与发光元件3导通连接，正极端子22通过导线6b与发光元件3导通连接。在以后的说明中，有时将导线6a、6b合称为导线6。
发光元件3能够根据用途适当采用蓝色发光二极管、红色发光二极管、绿色发光二极管等。发光元件3是在绝缘性基板上设置半导体层，在顶面作为一对元件电极设置了作为阴极的n侧电极和作为阳极的p侧电极的LED。在通过蚀刻发光层及p型半导体层和部分n型半导体层而露出的n型半导体层上形成的n侧电极、以及在形成n侧电极时蚀刻了的剩余的p型半导体层上的区域中形成的p侧电极在顶面上形成，导线6分别布线到n侧电极与p侧电极。以下，有时将n侧电极以及p侧电极称为电极垫。
封装部4形成了用于形成密封部5的凹部41。封装部4使引线框2的负极端子21和正极端子22的表面部作为导线6的键合部露出，以跨越负极端子21和正极端子22的方式形成。封装部4能够由环氧树脂或硅酮树脂等树脂材料形成。
密封部5形成在封装部4的凹部41，由此密封发光元件3以及导线6。密封部5中，在树脂或玻璃等作为主材料的透明介质中，能够含有由来自发光元件3的光激励并对波长进行变换的荧光体。例如，若发光元件3发出蓝色光，则通过在密封部5中含有发出黄色光的荧光体，来自发光元件3的蓝色光与来自荧光体的黄色光混合，因而能够产生白色光。作为荧光体，能够使用硅酸盐荧光体、YAG系荧光体。
导线6是用于向发光元件3供给与引线框2连接的来自外部的电源的布线。导线6由以银为主材料的合金形成。该合金例如能够采用以10％重量以下含有Cu、Pt、Pd、Ru、Os、Rh、Ir、Ca、Sr、Y、La、Ce、Eu、Be、Ge、In、Sn中的一种或两种以上的合金，或者能够采用含有Au的合金。
作为第一导线的导线6a对作为第一电极的负极元件21和在发光元件3的顶面上形成的作为第二电极的n型电极进行导通连接。导线6a在与负极元件21的接合部形成第一键合部61a，并且在与发光元件3的n型电极的凸点B的接合部形成第二键合部62a。作为第二导线的导线6b对作为第一电极的正极元件22和在发光元件3的顶面上形成的作为第二电极的p型电极进行导通连接。导线6b在与负极元件22的接合部形成第一键合部61b，并且在与发光元件3的p型电极的凸点B的接合部形成第二键合部62b。在以下的说明中，有时将第一键合部61a、61b合称为第一键合部61，将第二键合部62a、62b合称为第二键合部62。
在此，基于附图说明导线6的导线键合布线方法。在此，以形成对负极元件21和发光元件3的n侧电极进行导通连接的导线6a的情况为例进行说明。此外，形成对正极元件22和发光元件3的p侧电极进行导通连接的导线6b的情况也可以采用同样的方法。
首先，如图2(A)所示，使毛细管C下降到发光元件3的n侧电极上并形成凸点B。
接着，使毛细管C上升，向负极端子21的上方水平移动之后，下降到负极端子21的上表面。并且，使导线的金属材料从毛细管C顶端的供给口X突出，按压在负极端子21上，形成第一键合部61a。接着，从供给口X挤出金属材料以形成导线6a，同时拉起毛细管C向正极端子22的方向移动，由此，如图2(B)所示，形成导线环。
并且，使毛细管C的顶端移动到凸点B，抵压到凸点B的接合面。据此，在由毛细管C的供给口周围面即圆弧面形成的抵压面S1与凸点B之间，挤压导线6a的顶端，将毛细管C顶端的抵压面S1的形状转印到导线6a的顶端部。被挤压的导线6a的顶端成为第二键合部62a。这样，导线6a与凸点B的接合面接合布线。
通过将毛细管C顶端的抵压面S1的形状转印到导线6a的第二键合部62a，以均匀粗细布线的导线主体的截面形状成为凹状的圆弧面，从后述的基端向顶端逐渐变细。即，第二键合部62a成为顶端变细的形状。
这样，从位于低位置的负极端子21向形成于发光元件3顶面的、位于比负极端子21高的位置的n侧电极对导线6a进行布线，因而能够形成布线高度较低的低环的导线6a。另外，通过同样的方法，从位于低位置的正极端子22向形成于发光元件3顶面的、位于比正极端子22高的位置的p侧电极对导线6b进行布线，因而能够形成布线高度较低的低环的导线6b。
接着，使用图3说明导线6的顶端部与凸点B的接合面的形状的关系。
如图3(A)所示，作为导线6开始逐渐变细的第二键合部62的基端的锲形部起点P1从凸点B的接合面S2的一端P21进入接合面S2上。即，在俯视下，锲形部起点P1位于接合面S2内。
相对于凸点B的接合面S2在布线方向上的长度，该锲形部起点P1进入接合面S2上的程度优选在10％以上，例如优选在15％以上。即，在导线6延伸的方向上，从接合面S2的一端P21到锲形部起点P1的导线6的长度优选在接合面S2的长度的10％以上。据此，导线6的粗细逐渐变细的第二键合部62的基端(锲形部起点P1)向凸点B的接合面S2的另一端P22侧靠近。因此，能够使导线6的线径的较粗部分位于凸点B的接合面S2的足够内侧。这样，能够使包括第二键合部62的导线6的顶端部与凸点B的接合面S2牢固地接合，因而能够提高对树脂制的密封部5、金属制的导线6的热膨胀的差别的耐久性。由此，能够提高低环的导线6的可靠性。
另外，相对于凸点B的接合面S2在布线方向上的长度，若使该锲形部起点P1进入接合面S2上的程度在20％以上，则在温度急剧变化的环境中也能够显著提高耐久性，因而是优选的。
此外，如图3(B)所示，优选将锲形部起点P1在凸点B的接合面S2上的位置控制得使得毛细管C的抵压面S1上的供给口X的缘部不脱离凸点B的接合面S2，即不超过凸点B的接合面S2的另一端P22的位置。据此，能够在接合面S2上切断导线6的顶端以形成第二键合部62。
在本实施方式中，凸点B的接合面S2的轮廓形状大致为圆形，因此，接合面S2的布线方向的长度对应于凸点B的直径。在本实施方式的一例中，设凸点B的直径约为80μm，从凸点B的接合面S2的一端P21到锲形部起点P1的长度约为16μm。在此情况下，从凸点B的接合面S2的一端P21到锲形部起点P1的长度与凸点B的直径的比率约为20％。
对本实施方式所涉及的发光装置1进行了热应力的仿真。在仿真中，将导线6设定为纯度95％的银合金，将密封部5设定为杨氏模量15MPa、泊松比0.49的硅酮树脂，在-45℃以及+125℃的两种温度下测定了由于导线6的萎缩伸长以及密封部5的收缩膨胀而对第二键合部62施加的等效应力。测定值为相对值。
根据仿真结果可知，如图4所示，在-45℃以及+125℃下，与锲形部起点P1位于凸点B跟前的-2％、位于凸点B上的6％相比，使锲形部起点为10％、15％、20％时的等效应力都大幅减少。因此，优选使锲形部起点在10％以上。
接着，实际制造进行了仿真的发光装置1，进行了热冲击试验。热冲击试验中，将-40℃至100℃作为一个周期进行反复，每100个周期时，在常温状态(25℃)和高温状态(100℃)下试验了点亮状态。在此，在常温状态和高温状态的两种状态下试验点亮状态的理由是为了可靠地确认导线6的接合状态。例如，有时第二键合部62虽然从凸点B脱落，但与凸点B接触。在此情况下，发光元件3点亮，因此无法确认第二键合部62从凸点B脱落的事实。若为高温状态，则密封部5的树脂发生热膨胀，导线6容易从凸点B上浮，因此与常温状态相比更容易确认第二键合部62的脱落。因此，在高温状态和常温状态的两种状态下进行试验。
如图4所示，在使锲形部起点P1位于凸点B跟前的-2％的情况下，在常温点亮时通过600个周期确认了导线6的断开，另外在高温点亮时通过200个周期确认了导线6的断开。在使锲形部起点P1为6％的情况下，在常温点亮时通过500个周期确认了导线6的断开。另外在高温点亮时通过300个周期确认了导线6的断开。在使锲形部起点P1为10％的情况下，在常温点亮时600个周期时仍点亮，而在高温点亮时，在300个周期时确认了导线6的断开。在使锲形部起点P1为15％的情况下，在常温点亮时600个周期时仍点亮，而在高温点亮时，在300个周期时确认了导线6的断开。在使锲形部起点P1为20％的情况下，在常温点亮时600个周期时仍点亮，而在高温点亮时，在500个周期时确认了导线6的断开。
因此，从热冲击的观点出发，优选使锲形部起点P1为20％以上。
接着，使用图5说明导线6的断裂负载。
在本实施方式中，导线6的主材料由银形成。图5表示使导线为银合金、铜、以及金时的断裂负载的测定值的例子。导线的粗细(直径)在图5(A)中为23μm，在图5(B)中为25μm。另外，表示在常温25℃下进行拉伸试验的情况和在高温250℃下进行20秒的加热后进行拉伸试验的情况的测定结果。
如图5(A)所示，在导线的线径为23μm的情况下，银合金在25℃时断裂负载是比铜稍高的值，但在250℃时表现出比金和铜低的值。另外，如图5(B)所示，在导线的线径为25μm的情况下，银合金在25℃和250℃时均表现出比金和铜低的值。因此，通过在导线6中使用银合金，在形成导线6的第二键合部62并进行切断时，能够容易地切断。在图4及图5所示的例子中，导线6采用了纯度为95％的银合金，密封部5采用了硅酮树脂，但考虑导线6采用以银为主材料的银合金，密封部5采用膨胀率不同的树脂制或玻璃制的构件时，也具有同样的倾向。
这样，根据本实施方式，能够提高导线6的接合性和切断性，因而能够提高发光装置1的可靠性。
另外，对于直径25μm的银合金，以高温250℃进行20秒的加热后进行拉伸试验的结果是，即使在使用断裂负载比金的9.8cN小的8cN的Ag线的情况下，切断性也同样良好。其理由是，一般而言银的易切削性比金高，Ag合金中主成分也是银，因此切断性比金高。
此外，通过使用Ag纯度在94％以上的银合金，导线6中的Cu、Pt、Pd、Ru、Os、Rh、Ir、Ca、Sr、Y、La、Ce、Eu、Be、Ge、In、Sn中的一种或两种以上的含有量增加，因此例如在-40℃～100℃的热冲击试验等中接合性变高，另外由于银的纯度也较高，所以反射率变高，因而能够实现高亮度的发光装置，能够兼顾高亮度和高可靠性。
(其它结构例)
在图1所示的发光装置1中，利用导线6对引线框2和发光元件3进行了导通连接。并且，在导线6中，在与引线框2的接合部处形成的第一键合部61位于低位置，在与发光元件3的电极的凸点B的接合部处形成的第二键合部62位于高位置。但是，本实施方式所涉及的导线还能够采用图1所示结构以外的结构，例如能够采用图6及图7所示的发光装置。此外，在图6及图7中，对与图1共同的结构要素标注同一符号，在此有时省略说明。
图6所示的发光装置1x将两个发光元件3即作为第一半导体元件的第一发光元件31以及作为第二半导体元件的第二发光元件32配置在正极端子(第二引线电极)22上。并且，从负极端子(第一引线电极)21向第二发光元件32的作为一个电极的n电极对导线6a进行布线，另外，从正极端子22向第一发光元件31的作为一个电极的p电极对导线6b进行布线。并且，从第一发光元件31的作为另一个元件电极的n电极向第二发光元件32的作为另一个元件电极的p电极对导线7进行布线。
作为第一导线的导线7在与第一发光元件31的n电极的接合部处形成第一键合部61c，并且在与第二发光元件32的p电极的接合部处形成第二键合部62c。即，导线7对位于相同高度的位置的电极彼此进行连接。并且，导线7与作为第二及第三导线的导线6a、6b具有相同结构。也就是说，第二键合部62c成为顶端变细的形状，并且，在导线7延伸的方向上，导线7开始变细的锲形部起点的位置从与在第二发光元件32的p电极上形成的凸点B的接合面的一端，以接合面长度的10％以上进入凸点B侧。
这样，在正极端子22上搭载了两个发光元件3的发光装置1x中，在发光元件3之间进行连接的导线7也相对于凸点B的接合面的长度使锲形部起点进入凸点B侧10％以上，由此能够提高导线7与凸点B的接合强度。
图7所示的发光装置1y将两个发光元件3中作为第一半导体元件的第一发光元件31配置在正极端子(第一引线电极)22上，将第二发光元件32配置在负极端子(第二引线电极)21上。并且，从负极端子21向第二发光元件32的作为一个电极的n电极对导线6a进行布线，另外，从正极端子22向第一发光元件31的作为一个电极的p电极对导线6b进行布线。并且，从第一发光元件31的作为另一个元件电极的n电极向第二发光元件32的作为另一个元件电极的p电极对导线7进行布线。
作为第一导线的导线7在与第一发光元件31的n电极的接合部处形成第一键合部61c，并且在与第二发光元件32的p电极的接合部处形成第二键合部62c。即，导线7对位于相同高度的位置的电极彼此进行连接。并且，导线7与作为第二及第三导线的导线6a、6b具有相同结构。也就是说，第二键合部62c成为顶端变细的形状，并且，在导线7延伸的方向上，导线7开始变细的锲形部起点的位置从与在第二发光元件32的p电极上形成的凸点B的接合面的一端，以接合面长度的10％以上进入凸点B侧。
这样，在第一发光元件31配置于正极端子22，第二发光元件32配置于负极端子21，两个发光元件3配置于各自的端子的发光装置1y中，在发光元件3之间进行连接的导线7也相对于凸点B的接合面的长度使锲形部起点进入凸点B侧10％以上，由此能够提高导线7与凸点B的接合强度。
产业上的可利用性
本发明能够提高导线的接合性和切断性，从而能够提高半导体装置的可靠性，因而适用于由导线对电极彼此进行连接的半导体装置以及导线键合布线方法。
标号说明
1、1x、1y     发光装置(半导体装置)
2     引线框
3     发光元件(半导体元件)
4     封装部
5     密封部
6、6a、6b、7     导线
21     负极端子
22     正极端子
31     第一发光元件(第一半导体元件)
32     第二发光元件(第二半导体元件)
61、61a、61b、61c     第一键合部
62、62a、62b、62c     第二键合部
B     凸点
P1     锲形部起点(基端)
P21     一端
P22     另一端
C     毛细管
X     供给口
S1     抵压面
S2     接合面

Claims (8)

1.一种半导体装置，具备对第一电极和形成了凸点的第二电极进行导通连接的至少一个导线，
所述导线由以银为主材料的合金形成，并且在与所述第一电极的接合部处形成第一键合部，并在与所述第二电极的凸点的接合部处形成第二键合部，
所述第二键合部成为顶端变细的形状，并且，
在俯视下，所述导线开始变细的基端位于所述导线与所述凸点的接合面内，并且，在所述导线延伸的方向上，从所述接合面的端部到所述基端的所述导线的长度是所述接合面的长度的10％以上。
2.根据权利要求1所述的半导体装置，其特征在于具备：
半导体元件以及引线电极，
所述导线包括对作为所述第一电极的所述引线电极和作为所述第二电极的第一元件电极进行导通连接的第一导线，所述第一元件电极形成在所述半导体元件的顶面，并且位于比所述引线电极高的位置。
3.根据权利要求2所述的半导体装置，其特征在于具备：
第二引线电极，
所述半导体元件配置在所述第二引线电极上，并且在顶面形成有包括所述第一元件电极的一对元件电极，
所述导线包括对作为所述第一电极的所述第二引线电极和作为所述第二电极的、所述半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第二导线。
4.根据权利要求1所述的半导体装置，其特征在于具备：
第一半导体元件及第二半导体元件，
所述导线包括第一导线，所述第一导线对作为所述第一电极的形成在所述第一半导体元件的顶面的元件电极、和作为所述第二电极的形成在所述第二半导体元件的顶面且与所述第一半导体元件的所述元件电极位于相同高度的位置的元件电极进行导通连接。
5.根据权利要求4所述的半导体装置，其特征在于具备：
第一引线电极及第二引线电极，
所述第一半导体元件及第二半导体元件分别配置在所述第二引线电极上，并且在顶面形成有包括所述元件电极的一对元件电极，
所述导线包括：
对作为所述第一电极的所述第一引线电极和作为所述第二电极的、所述第一半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第二导线；以及
对作为所述第一电极的所述第二引线电极和作为所述第二电极的、所述第二半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第三导线。
6.根据权利要求4所述的半导体装置，其特征在于具备：
第一引线电极及第二引线电极，
所述第一半导体元件配置在所述第一引线电极上，并且在顶面形成有包括所述元件电极的一对元件电极，
所述第二半导体元件配置在所述第二引线电极上，并且在顶面形成有包括所述元件电极的一对元件电极，
所述导线包括：
对作为所述第一电极的所述第一引线电极和作为所述第二电极的、所述第一半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第二导线；以及
对作为所述第一电极的所述第二引线电极和作为所述第二电极的、所述第二半导体元件的一对元件电极中未与所述第一导线连接的元件电极进行导通连接的第三导线。
7.一种导线键合布线方法，在半导体装置中通过由以银为主材料的合金形成的导线对第一电极和第二电极进行导通连接，所述导线键合布线方法具备：
第一工序，从毛细管的顶端的供给口供给出金属材料，按压在所述第一电极上，由此形成第一键合部；
第二工序，从所述供给口供给出金属材料的同时使所述毛细管向所述第二电极的方向移动，由此形成导线环；以及
第三工序，将所述毛细管的顶端抵压到形成在所述第二电极的凸点的接合面，由此形成第二键合部，
在所述第三工序中，
所述毛细管的顶端的抵压面的形状转印到所述第二键合部，所述第二键合部成为顶端变细的形状，并且，
控制所述毛细管的位置，使得在俯视下所述导线开始变细的基端位于所述接合面内，并且，在所述导线延伸的方向上，从所述接合面的端部到所述基端的所述导线的长度成为所述接合面的长度的10％以上。
8.根据权利要求7所述的导线键合布线方法，其特征在于，
在所述第三工序中，控制所述毛细管的位置，使得所述毛细管的顶端的供给口的缘部不脱离所述接合面。
CN201380060575.6A 2012-11-28 2013-11-20 半导体装置以及导线键合布线方法 Pending CN104798186A (zh)

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