CN104767121B - 表面发射激光器、表面发射激光器阵列和图像形成装置 - Google Patents
表面发射激光器、表面发射激光器阵列和图像形成装置 Download PDFInfo
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- CN104767121B CN104767121B CN201510153386.4A CN201510153386A CN104767121B CN 104767121 B CN104767121 B CN 104767121B CN 201510153386 A CN201510153386 A CN 201510153386A CN 104767121 B CN104767121 B CN 104767121B
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Classifications
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- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/455—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using laser arrays, the laser array being smaller than the medium to be recorded
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/47—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light
- B41J2/471—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light using dot sequential main scanning by means of a light deflector, e.g. a rotating polygonal mirror
- B41J2/473—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using the combination of scanning and modulation of light using dot sequential main scanning by means of a light deflector, e.g. a rotating polygonal mirror using multiple light beams, wavelengths or colours
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Facsimile Scanning Arrangements (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010233164 | 2010-10-16 | ||
| JP2010-233164 | 2010-10-16 | ||
| JP2011-199434 | 2011-09-13 | ||
| JP2011199434A JP5950523B2 (ja) | 2010-10-16 | 2011-09-13 | 面発光レーザ、面発光レーザアレイ、画像形成装置 |
| CN201180049069.8A CN103168402B (zh) | 2010-10-16 | 2011-10-05 | 表面发射激光器、表面发射激光器阵列和图像形成装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180049069.8A Division CN103168402B (zh) | 2010-10-16 | 2011-10-05 | 表面发射激光器、表面发射激光器阵列和图像形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104767121A CN104767121A (zh) | 2015-07-08 |
| CN104767121B true CN104767121B (zh) | 2018-05-08 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180049069.8A Expired - Fee Related CN103168402B (zh) | 2010-10-16 | 2011-10-05 | 表面发射激光器、表面发射激光器阵列和图像形成装置 |
| CN201510153386.4A Expired - Fee Related CN104767121B (zh) | 2010-10-16 | 2011-10-05 | 表面发射激光器、表面发射激光器阵列和图像形成装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180049069.8A Expired - Fee Related CN103168402B (zh) | 2010-10-16 | 2011-10-05 | 表面发射激光器、表面发射激光器阵列和图像形成装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8897330B2 (enExample) |
| EP (1) | EP2628219B1 (enExample) |
| JP (1) | JP5950523B2 (enExample) |
| KR (1) | KR101463704B1 (enExample) |
| CN (2) | CN103168402B (enExample) |
| WO (1) | WO2012050146A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5950523B2 (ja) * | 2010-10-16 | 2016-07-13 | キヤノン株式会社 | 面発光レーザ、面発光レーザアレイ、画像形成装置 |
| CN104078844A (zh) * | 2013-03-29 | 2014-10-01 | 新科实业有限公司 | 具有窄激光发射角度的多模垂直腔面发射激光器 |
| US10447011B2 (en) | 2014-09-22 | 2019-10-15 | Hewlett Packard Enterprise Development Lp | Single mode vertical-cavity surface-emitting laser |
| US10079474B2 (en) * | 2014-09-22 | 2018-09-18 | Hewlett Packard Enterprise Development Lp | Single mode vertical-cavity surface-emitting laser |
| WO2017045161A1 (zh) | 2015-09-16 | 2017-03-23 | 华为技术有限公司 | 半导体激光器及其加工方法 |
| JP6918540B2 (ja) * | 2017-03-27 | 2021-08-11 | スタンレー電気株式会社 | 発光装置 |
| FR3078834B1 (fr) * | 2018-03-08 | 2020-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d’emission lumineuse comportant au moins un vcsel et une lentille de diffusion |
| US10892601B2 (en) * | 2018-05-24 | 2021-01-12 | Stanley Electric Co., Ltd. | Vertical cavity light-emitting element |
| TWI805824B (zh) * | 2018-08-13 | 2023-06-21 | 新加坡商Ａｍｓ傳感器亞洲私人有限公司 | 低發散垂直空腔表面發射雷射及結合其之模組及主裝置 |
| JP7288360B2 (ja) * | 2019-07-01 | 2023-06-07 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
| US12362541B2 (en) * | 2021-04-30 | 2025-07-15 | Lumentum Operations Llc | Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity |
| WO2023162488A1 (ja) * | 2022-02-25 | 2023-08-31 | ソニーグループ株式会社 | 面発光レーザ、光源装置及び測距装置 |
| US12489273B2 (en) * | 2022-11-07 | 2025-12-02 | Ii-Vi Delaware, Inc. | Vertical cavity surface emitting laser (VCSEL) emitter with guided-antiguided waveguide |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640376A (zh) * | 2008-07-31 | 2010-02-03 | 佳能株式会社 | 表面发射激光器及阵列、其制造方法和光学装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5727014A (en) * | 1995-10-31 | 1998-03-10 | Hewlett-Packard Company | Vertical-cavity surface-emitting laser generating light with a defined direction of polarization |
| JP3697903B2 (ja) | 1998-07-06 | 2005-09-21 | 富士ゼロックス株式会社 | 面発光レーザおよび面発光レーザアレイ |
| JP2001284722A (ja) | 2000-03-29 | 2001-10-12 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法 |
| JP2003115634A (ja) * | 2001-08-02 | 2003-04-18 | Furukawa Electric Co Ltd:The | 面発光レーザ素子 |
| JP3729263B2 (ja) * | 2002-09-25 | 2005-12-21 | セイコーエプソン株式会社 | 面発光型半導体レーザおよびその製造方法、光モジュール、光伝達装置 |
| JP2006019470A (ja) | 2004-07-01 | 2006-01-19 | Sony Corp | 面発光半導体レーザおよび光モジュール |
| JP4919639B2 (ja) * | 2004-10-13 | 2012-04-18 | 株式会社リコー | 面発光レーザ素子および面発光レーザアレイおよび面発光レーザ素子の製造方法および面発光レーザモジュールおよび電子写真システムおよび光通信システムおよび光インターコネクションシステム |
| WO2006056208A2 (en) * | 2004-11-29 | 2006-06-01 | Alight Technologies A/S | Single-mode photonic-crystal vcsels |
| JP2006210429A (ja) | 2005-01-25 | 2006-08-10 | Sony Corp | 面発光型半導体レーザ |
| JP5376104B2 (ja) * | 2005-07-04 | 2013-12-25 | ソニー株式会社 | 面発光型半導体レーザ |
| JP2007093770A (ja) * | 2005-09-27 | 2007-04-12 | Canon Inc | 走査光学装置及びそれを用いた画像形成装置 |
| JP4878322B2 (ja) * | 2007-03-29 | 2012-02-15 | 古河電気工業株式会社 | 面発光レーザ素子および面発光レーザ素子の製造方法 |
| JP4350774B2 (ja) | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザ |
| EP2210319B1 (en) * | 2007-11-14 | 2020-10-07 | Ricoh Company, Ltd. | Surface emitting laser, surface emitting laser array, optical scanning device, image forming apparatus, optical transmission module and optical transmission system |
| US8077752B2 (en) | 2008-01-10 | 2011-12-13 | Sony Corporation | Vertical cavity surface emitting laser |
| JP5279393B2 (ja) | 2008-07-31 | 2013-09-04 | キヤノン株式会社 | 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器 |
| JP5038371B2 (ja) * | 2008-09-26 | 2012-10-03 | キヤノン株式会社 | 面発光レーザの製造方法 |
| JP5261754B2 (ja) * | 2008-11-27 | 2013-08-14 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
| JP5434201B2 (ja) | 2009-03-23 | 2014-03-05 | ソニー株式会社 | 半導体レーザ |
| JP5313005B2 (ja) | 2009-03-30 | 2013-10-09 | 株式会社ビデオリサーチ | 調査システム及び調査方法 |
| JP5515767B2 (ja) | 2009-05-28 | 2014-06-11 | 株式会社リコー | 面発光レーザ素子の製造方法、面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
| JP5510899B2 (ja) * | 2009-09-18 | 2014-06-04 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置、及び画像形成装置 |
| JP2011199434A (ja) | 2010-03-17 | 2011-10-06 | Konica Minolta Business Technologies Inc | 画像処理装置、同装置による画像処理方法及び画像処理プログラム |
| JP5585940B2 (ja) | 2010-04-22 | 2014-09-10 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法 |
| JP2012009727A (ja) * | 2010-06-28 | 2012-01-12 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
| JP5950523B2 (ja) * | 2010-10-16 | 2016-07-13 | キヤノン株式会社 | 面発光レーザ、面発光レーザアレイ、画像形成装置 |
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| CN101640376A (zh) * | 2008-07-31 | 2010-02-03 | 佳能株式会社 | 表面发射激光器及阵列、其制造方法和光学装置 |
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|---|---|
| JP5950523B2 (ja) | 2016-07-13 |
| CN104767121A (zh) | 2015-07-08 |
| KR101463704B1 (ko) | 2014-11-19 |
| EP2628219B1 (en) | 2017-01-25 |
| US8897330B2 (en) | 2014-11-25 |
| CN103168402B (zh) | 2015-04-15 |
| WO2012050146A1 (en) | 2012-04-19 |
| US20130177336A1 (en) | 2013-07-11 |
| CN103168402A (zh) | 2013-06-19 |
| US20150036711A1 (en) | 2015-02-05 |
| KR20130063034A (ko) | 2013-06-13 |
| US9281660B2 (en) | 2016-03-08 |
| JP2012104805A (ja) | 2012-05-31 |
| EP2628219A1 (en) | 2013-08-21 |
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