CN104752369B - 光电元件模组 - Google Patents

光电元件模组 Download PDF

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CN104752369B
CN104752369B CN201310732635.6A CN201310732635A CN104752369B CN 104752369 B CN104752369 B CN 104752369B CN 201310732635 A CN201310732635 A CN 201310732635A CN 104752369 B CN104752369 B CN 104752369B
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electrode
groove
cell module
photoelectric cell
arm
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CN104752369A (zh
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林厚德
张超雄
陈滨全
陈隆欣
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Suzhou Medical Device Industry Development Co ltd
Suzhou Medical Device Industry Development Group Co ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

一种光电元件模组,包括第一电极和第二电极,所述第一电极与第二电极绝缘设置;一发光二极管和一稳压二极管反向并联于所述第一电极和第二电极。在第一电极的边缘设有第一凹槽,在第二电极的边缘设有第二凹槽,所述第一凹槽和第二凹槽相对设置并与第一电极和第二电极之间的空隙连通,所述稳压二极管设置于第一凹槽或第二凹槽的底部,所述第一凹槽和第二凹槽的深度大于等于稳压二极管的高度。

Description

光电元件模组
技术领域
本发明涉及一种光电元件模组,尤其涉及具有稳压二极管和发光二极管的光电元件模组。
背景技术
发光二极管作为一种新型的光源,目前已广泛应用于多种场合。请参阅图1和图2,在普通光电元件的封装结构中,为了提高发光二极管20的抗静电能力,一般通过反向并联稳压二极管30来避免静电损伤,且发光二极管20和稳压二极管30共同封装于反射杯50中。然而,随着光电元件模组的尺寸越来越小,容纳发光二极管20的反射杯50的空间也较小,在配合稳压二极管30的情况下,导致发光二极管20不能设置在反射杯50底部中心,从而引起该光电元件的发光光场的偏移问题,同时稳压二极管30会吸收部分从发光二极管20发出的光线。
发明内容
本发明旨在提供一种光电元件模组以克服上述缺陷。
一种光电元件模组,包括第一电极和第二电极,所述第一电极与第二电极绝缘设置;一发光二极管和一稳压二极管反向并联于所述第一电极和第二电极。在第一电极的边缘设有第一凹槽,在第二电极的边缘设有第二凹槽,所述第一凹槽和第二凹槽相对设置并与第一电极和第二电极之间的空隙连通,所述稳压二极管设置于第一凹槽或第二凹槽的底部,所述第一凹槽和第二凹槽的深度大于等于稳压二极管的高度。
本发明所提供的光电元件模组通过在第一电极和第二电极的边缘分别设置开口相对第一凹槽和第二凹槽,将稳压二极管设置于第一凹槽和第二凹槽底部,且第一凹槽和第二凹槽的深度大于稳压二极管的高度,解决了光电元件的发光光场的偏移问题和稳压二极管对从发光二极管发出的光线的吸收问题。
附图说明
图1为现有技术中的光电元件模组的俯视图。
图2为图1中光电元件模组的沿II-II的截面图。
图3为本发明提供的光电元件模组的俯视图。
图4为图3中光电元件模组的沿IV-IV的截面图。
图5为图3中的光电元件模组设置封装层后的一实施例的沿IV-IV的截面图。
图6为图3中的光电元件模组设置反射杯后填充封装层后的沿IV-IV的截面图。
图7为图3中的光电元件模组设置反射杯后填充第一封装层和第二封装层后的沿IV-IV的截面图。
主要元件符号说明
基板 10
间隙 101
空隙 102
第一电极 110
宽臂 110a
窄臂 110b
连接臂 110c
第一凹槽 111
第二电极 120
第二凹槽 121
底部 1111、1211
边缘 1112、1212、1113、1213
上表面 118、128
发光二极管 20
稳压二极管 30
导线 310
封装层 40、40a
透镜 41
第一封装层 401
第二封装层 402
反射杯 50
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合附图,对本发明作进一步的详细说明。
请参阅图3至图4,一种光电元件模组,包括第一电极110和第二电极120,所述第一电极110与第二电极120绝缘设置。在所述第一电极110和第二电极120上反向并联有一发光二极管20和一稳压二极管30。
所述发光二极管20和稳压二极管30设计为反向并联的原理如下:由于二极管具有正向导通,反向截止的特性,在正常工作状态下,在发光二极管20两端为正向电压,发光二极管20发出光线,而在电路出现异常时,在发光二极管20两端可累积大量反向电荷,使得反向电压增加,从而导致发光二极管20被击穿,损坏电路。当在发光二极管20两端反向并联稳压二极管30后,稳压二极管30可导通反向电荷,避免了发光二极管20两端的反向电压增加的问题,从而保护了发光二极管20。此反向并联的方式多用于对发光二极管进行静电保护。
在本实施例中,所述发光二极管20采用覆晶方式电连接于第二电极120与第一电极110的宽臂110a,位于光电元件模组的中心。
具体的,所述第一电极110包括宽臂110a、窄臂110b和连接臂110c,所述宽臂110a、窄臂110b和连接臂110c形成“U”型,其中所述连接臂110c电连接所述宽臂110a和窄臂110b,所述宽臂110a和窄臂110b均与连接臂110c垂直。具体的,所述第一电极110的宽臂110a、窄臂110b和连接臂110c可通过焊接的方式连接在一起,也可以通过一体成型的方式形成。所述第二电极120位于第一电极110的“U”型开口内。
所述“宽臂110a与第二电极120之间的距离h的一半”与“宽臂110a的宽度a”之和为连接臂110c的长度c的一半。也就是说,第二电极120的宽度g、窄臂110b的宽度b以及窄臂110b与第二电极120之间的距离f三者之和,与宽臂110a的宽度a相等。这样设计使得第二电极120与第一电极110的宽臂110a相邻的边缘位于光电元件模组的中心,便于采用覆晶的方式将发光二极管20定位于光电元件模组的中心,在后续设置透镜或反射杯时更容易准确的使发光二极管20处于透镜的光轴或反射杯的中心轴。所述第一电极110的窄臂110b具有朝向第二电极120的边缘1112,相对应的,第二电极120具有朝向窄臂110b的边缘1212。所述宽臂110a具有朝向第二电极120的边缘1113,相对应的,第二电极120具有朝向宽臂110a的边缘1213。所述第二电极的两个边缘1212、1213构成第二电极120的两个相对边缘。
在本实施例中,窄臂110b与第二电极120之间的距离f(即边缘1112与边缘1212之间的距离f),以及宽臂110a与第二电极120之间的距离h(及即边缘1113和边缘1213之间的距离)两者相等,可以理解在其他实施例中这种设计不是必要的。
所述第一电极110的窄臂110b的边缘1112和第二电极120的边缘1212上分别设有第一凹槽111和第二凹槽121。第一凹槽111是由窄臂110b的上表面118向下凹陷,以及由边缘1112向内凹陷形成的。第二凹槽121是有第二电极120的上表面128向下凹陷,以及由边缘1212向内凹陷形成的。第一凹槽111和第二凹槽121相对设置,并与窄臂110b和第二电极120之间的间隙101连通。
所述稳压二极管30设置于第一凹槽111的底部1111或第二凹槽121的底部1211。所述稳压二极管30与第一电极110和第二电极120电连接。在本实施例中,所述稳压二极管30打线连接于第二凹槽121的底部1211,导线310的两端分别电连接稳压二极管30和第一凹槽111的底部1111。所述第一凹槽111和第二凹槽121的深度大于等于稳压二极管30的高度。导线310完全置于窄臂110b的上表面118和第二电极120的上表面128以下,从另一个角度可以说导线310完全容置在第一凹槽111中。在第一电极110和第二电极120上分别设置第一凹槽111和第二凹槽121的原因在于,采用打线连接的方式将稳压二极管30设置于第二凹槽121中,为避免导线310伸出第一凹槽111和第二凹槽121的顶部吸收发光二极管20发出的光线和避免后续设置透镜或反射杯时可能造成对导线310的损害。
本发明所提供的光电元件模组通过在第一电极110的窄臂110b的边缘1112和第二电极120的边缘1212分别设置开口相对的第一凹槽111和第二凹槽121,将稳压二极管30设置于第一凹槽111或第二凹槽121,且第一凹槽111和第二凹槽121的深度大于稳压二极管30的高度,解决了光电元件的发光光场的偏移问题和稳压二极管30对从发光二极管20发出的光线的吸收问题。
进一步的,所述光电元件模组还包括承载所述第一电极110和第二电极120的基板10。所述基板10采用绝缘材料制成。所述绝缘材料可选自环氧模塑封装层(Epoxy MoldingCompound,EMC)和SMC复合材料(Sheet molding compound,SMC)。所述基板10对第一电极110和第二电极120起支持作用和绝缘作用,基板10填充于第一电极110和第二电极120之间的间隙101中的部分结构,在视图中可见,其他部分未示出。可以理解地,为方便设置导线310,第一凹槽111和第二凹槽121之间的空隙102并未设置基板10。
更进一步,请参阅图5,本发明提供的光电元件模组还包括一封装层40,所述封装层40覆盖于光电元件模组上设置有发光二极管20和稳压二极管30的一面。所述封装层40填充于第一凹槽111和第二凹槽121以及第一凹槽111和第二凹槽121之间的空隙102。
所述封装层40包含一设置于所述发光二极管20上方的透镜41,所述发光二极管20位于透镜41的光轴M-M。所述透镜41可包含荧光粉。
在另一些实施例中,如图6所示,本发明所提供的光电元件模组还包括一设置于基板10上的反射杯50。所述发光二极管20位于基板10之上,反射杯50的底部中心。所述反射杯50、第一凹槽111和第二凹槽121内均填充有封装层40a,以覆盖发光二极管20和稳压二极管30。所述封装层40a包含荧光粉。
进一步的,如图7所示,所述封装层40a可分为第一封装层401和第二封装层402。所述第一封装层401填充于反射杯50内以覆盖发光二极管20。所述第二封装层402填充于第一凹槽111和第二凹槽121之间的空隙102以覆盖稳压二极管30。所述第一封装层401包含荧光粉。优选的,为进一步增加光电元件模组的出光效率,第二封装层402采用白色封装材料。
对于本领域的技术人员来说可以在本发明技术构思内做其他变化,但是,根据本发明的技术构思做出其它各种相应的改变与变形,都应属于本发明权利要求的保护范围。

Claims (14)

1.一种光电元件模组,包括第一电极和第二电极,所述第一电极与第二电极绝缘设置;一发光二极管和一稳压二极管反向并联于所述第一电极和第二电极,其特征在于:在第一电极的边缘设有第一凹槽,在第二电极的边缘设有第二凹槽,所述第一凹槽和第二凹槽相对设置并与第一电极和第二电极之间的空隙连通,所述稳压二极管设置于第一凹槽或第二凹槽的底部,所述第一凹槽和第二凹槽的深度大于等于稳压二极管的高度。
2.如权利要求1所述的光电元件模组,其特征在于:所述第一电极包括宽臂、窄臂和连接臂,所述宽臂、窄臂和连接臂形成“U”型,所述连接臂电连接所述宽臂和窄臂,所述第二电极设置于第一电极的“U”型开口内。
3.如权利要求2所述的光电元件模组,其特征在于:“所述宽臂与所述第二电极之间的距离的一半”与“所述宽臂的宽度”之和等于所述连接臂长度的一半。
4.如权利要求2所述的光电元件模组,其特征在于:所述第一凹槽和第二凹槽分别设置于第一电极的窄臂的边缘和与窄臂对应的第二电极的一边缘,所述稳压二极管设置于第一凹槽或第二凹槽中,且与第一电极和第二电极电连接,所述发光二极管与第一电极的宽臂和第二电极电连接。
5.如权利要求1所述的光电元件模组,其特征在于:还包括承载第一电极和第二电极的基板。
6.如权利要求1至5任一项所述的光电元件模组,其特征在于:还包括一封装层,所述封装层覆盖于光电元件模组上设置有发光二极管和稳压二极管的一面,且填充第一凹槽和第二凹槽之间的空隙。
7.如权利要求6所述的光电元件模组,其特征在于:所述封装层包含一设置于所述发光二极管上方的透镜,所述发光二极管位于所述透镜的光轴。
8.如权利要求7所述的光电元件模组,其特征在于:所述透镜包含荧光粉。
9.如权利要求1至5任一项所述的光电元件模组,其特征在于:还包括一反射杯,所述反射杯设置于光电元件模组上设置有发光二极管和稳压二极管的一面。
10.如权利要求9所述的光电元件模组,其特征在于:所述发光二极管位于反射杯底部中心。
11.如权利要求10所述的光电元件模组,其特征在于:还包括封装层,所述封装层填充于反射杯内以覆盖发光二极管和稳压二极管。
12.如权利要求11所述的光电元件模组,其特征在于:所述封装层包含荧光粉。
13.如权利要求10所述的光电元件模组,其特征在于:还包括第一封装层和第二封装层,所述第一封装层为透明封装层,填充于反射杯内以覆盖发光二极管,所述第二封装层为白色封装材料,填充于第一凹槽和第二凹槽之间的空隙中以覆盖稳压二极管。
14.如权利要求13所述的光电元件模组,其特征在于:所述第一封装层包含荧光粉。
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