CN1047150A - 稳压电路 - Google Patents

稳压电路 Download PDF

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Publication number
CN1047150A
CN1047150A CN90103635.8A CN90103635A CN1047150A CN 1047150 A CN1047150 A CN 1047150A CN 90103635 A CN90103635 A CN 90103635A CN 1047150 A CN1047150 A CN 1047150A
Authority
CN
China
Prior art keywords
transistor
transistors
voltage
voltage stabilizing
stabilizing circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN90103635.8A
Other languages
English (en)
Chinese (zh)
Inventor
寺岛义幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2041951A external-priority patent/JPH0348313A/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN1047150A publication Critical patent/CN1047150A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Control Of Electrical Variables (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
CN90103635.8A 1989-04-26 1990-04-26 稳压电路 Pending CN1047150A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP10642689 1989-04-26
JP106426/89 1989-04-26
JP41951/90 1990-02-22
JP2041951A JPH0348313A (ja) 1989-04-26 1990-02-22 定電圧回路

Publications (1)

Publication Number Publication Date
CN1047150A true CN1047150A (zh) 1990-11-21

Family

ID=26381601

Family Applications (1)

Application Number Title Priority Date Filing Date
CN90103635.8A Pending CN1047150A (zh) 1989-04-26 1990-04-26 稳压电路

Country Status (3)

Country Link
US (1) US5124631A (enExample)
CN (1) CN1047150A (enExample)
CH (1) CH681928A5 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103970171A (zh) * 2013-11-26 2014-08-06 苏州贝克微电子有限公司 一种cmos稳压电路

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3107556B2 (ja) * 1990-06-01 2000-11-13 株式会社東芝 ダイナミック型半導体記憶装置
GB2291512B (en) * 1991-11-15 1996-12-11 Nec Corp Reference voltage generating circuit to be used for a constant voltage circuit formed of fets
US5168180A (en) * 1992-04-20 1992-12-01 Motorola, Inc. Low frequency filter in a monolithic integrated circuit
DE69229995T2 (de) * 1992-06-30 2000-03-16 Stmicroelectronics S.R.L. Spannungsregler für Speichergeräte
KR100310858B1 (ko) * 1993-04-30 2001-12-15 이데이 노부유끼 통신회로시스템
JP3329077B2 (ja) * 1993-07-21 2002-09-30 セイコーエプソン株式会社 電源供給装置、液晶表示装置及び電源供給方法
DE4334513C1 (de) * 1993-10-09 1994-10-20 Itt Ind Gmbh Deutsche CMOS-Schaltung mit erhöhter Spannungsfestigkeit
DE69328253T2 (de) * 1993-12-31 2000-09-14 Stmicroelectronics S.R.L., Agrate Brianza Spannungsregler zum Programmieren nichtflüchtiger und elektrisch programmierbarer Speicherzellen
US5440519A (en) * 1994-02-01 1995-08-08 Micron Semiconductor, Inc. Switched memory expansion buffer
US5670869A (en) * 1996-05-30 1997-09-23 Sun Microsystems, Inc. Regulated complementary charge pump with imbalanced current regulation and symmetrical input capacitance
US5748030A (en) * 1996-08-19 1998-05-05 Motorola, Inc. Bias generator providing process and temperature invariant MOSFET transconductance
KR100190101B1 (ko) * 1996-10-18 1999-06-01 윤종용 반도체 장치의 내부 전압 변환 회로
FR2799317B1 (fr) 1999-10-01 2001-12-14 St Microelectronics Sa Regulateur lineaire a selection de la tension de sortie
US7400123B1 (en) * 2006-04-11 2008-07-15 Xilinx, Inc. Voltage regulator with variable drive strength for improved phase margin in integrated circuits

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163161A (en) * 1975-11-24 1979-07-31 Addmaster Corporation MOSFET circuitry with automatic voltage control
JPS5393350A (en) * 1977-01-27 1978-08-16 Canon Inc Booster circuit
GB1602898A (en) * 1977-04-26 1981-11-18 Suwa Seikosha Kk Circuit for detecting a voltage
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
US4587477A (en) * 1984-05-18 1986-05-06 Hewlett-Packard Company Binary scaled current array source for digital to analog converters
US4752699A (en) * 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
JPH0632230B2 (ja) * 1987-03-31 1994-04-27 株式会社東芝 半導体不揮発性記憶装置
US4853610A (en) * 1988-12-05 1989-08-01 Harris Semiconductor Patents, Inc. Precision temperature-stable current sources/sinks
US4939633A (en) * 1989-02-03 1990-07-03 General Signal Corporation Inverter power supply system
US4954769A (en) * 1989-02-08 1990-09-04 Burr-Brown Corporation CMOS voltage reference and buffer circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103970171A (zh) * 2013-11-26 2014-08-06 苏州贝克微电子有限公司 一种cmos稳压电路

Also Published As

Publication number Publication date
CH681928A5 (enExample) 1993-06-15
US5124631A (en) 1992-06-23

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication