CN104662049B - 光固化性组合物及使用该组合物的膜的制造方法 - Google Patents
光固化性组合物及使用该组合物的膜的制造方法 Download PDFInfo
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- CN104662049B CN104662049B CN201380048860.6A CN201380048860A CN104662049B CN 104662049 B CN104662049 B CN 104662049B CN 201380048860 A CN201380048860 A CN 201380048860A CN 104662049 B CN104662049 B CN 104662049B
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- 239000000203 mixture Substances 0.000 title claims abstract description 211
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 77
- 150000001875 compounds Chemical class 0.000 claims abstract description 69
- 239000004094 surface-active agent Substances 0.000 claims abstract description 42
- 239000003999 initiator Substances 0.000 claims abstract description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 85
- -1 (2-methyl-2-ethyl-1, 3-dioxan-4-yl) methacrylate Chemical compound 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 55
- 125000001424 substituent group Chemical group 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 239000010453 quartz Substances 0.000 claims description 22
- 229910052731 fluorine Inorganic materials 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 15
- 125000001153 fluoro group Chemical group F* 0.000 claims description 14
- 239000003505 polymerization initiator Substances 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 229920001451 polypropylene glycol Polymers 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 claims description 4
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 claims description 2
- VOBUAPTXJKMNCT-UHFFFAOYSA-N 1-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound CCCCCC(OC(=O)C=C)OC(=O)C=C VOBUAPTXJKMNCT-UHFFFAOYSA-N 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 239000000178 monomer Substances 0.000 claims 1
- 238000011049 filling Methods 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 72
- 239000000047 product Substances 0.000 description 57
- 238000005259 measurement Methods 0.000 description 35
- FNYWFRSQRHGKJT-UHFFFAOYSA-N 3-ethyl-3-[(3-ethyloxetan-3-yl)methoxymethyl]oxetane Chemical compound C1OCC1(CC)COCC1(CC)COC1 FNYWFRSQRHGKJT-UHFFFAOYSA-N 0.000 description 23
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 18
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 14
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 13
- 239000000975 dye Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical group C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 12
- 150000003254 radicals Chemical class 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 9
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 9
- 239000011737 fluorine Substances 0.000 description 9
- 238000013329 compounding Methods 0.000 description 8
- 229920001223 polyethylene glycol Polymers 0.000 description 8
- 239000002202 Polyethylene glycol Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229960000834 vinyl ether Drugs 0.000 description 7
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical group CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 6
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- JGTNAGYHADQMCM-UHFFFAOYSA-N perfluorobutanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-N 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- XUCHXOAWJMEFLF-UHFFFAOYSA-N bisphenol F diglycidyl ether Chemical compound C1OC1COC(C=C1)=CC=C1CC(C=C1)=CC=C1OCC1CO1 XUCHXOAWJMEFLF-UHFFFAOYSA-N 0.000 description 5
- 150000001721 carbon Chemical group 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- WMYINDVYGQKYMI-UHFFFAOYSA-N 2-[2,2-bis(hydroxymethyl)butoxymethyl]-2-ethylpropane-1,3-diol Chemical compound CCC(CO)(CO)COCC(CC)(CO)CO WMYINDVYGQKYMI-UHFFFAOYSA-N 0.000 description 4
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000000852 hydrogen donor Substances 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 239000006082 mold release agent Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 230000001235 sensitizing effect Effects 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 4
- JNELGWHKGNBSMD-UHFFFAOYSA-N xanthone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3OC2=C1 JNELGWHKGNBSMD-UHFFFAOYSA-N 0.000 description 4
- XDWRKTULOHXYGN-UHFFFAOYSA-N 1,3-bis(ethenoxy)-2,2-bis(ethenoxymethyl)propane Chemical compound C=COCC(COC=C)(COC=C)COC=C XDWRKTULOHXYGN-UHFFFAOYSA-N 0.000 description 3
- CZAVRNDQSIORTH-UHFFFAOYSA-N 1-ethenoxy-2,2-bis(ethenoxymethyl)butane Chemical compound C=COCC(CC)(COC=C)COC=C CZAVRNDQSIORTH-UHFFFAOYSA-N 0.000 description 3
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 3
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical class OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
- 125000002091 cationic group Chemical group 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 3
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000003566 oxetanyl group Chemical group 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 229940042596 viscoat Drugs 0.000 description 3
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 2
- OKRLWHAZMUFONP-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) trifluoromethanesulfonate Chemical compound FC(F)(F)S(=O)(=O)ON1C(=O)CCC1=O OKRLWHAZMUFONP-UHFFFAOYSA-N 0.000 description 2
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- LAYAKLSFVAPMEL-UHFFFAOYSA-N 1-ethenoxydodecane Chemical compound CCCCCCCCCCCCOC=C LAYAKLSFVAPMEL-UHFFFAOYSA-N 0.000 description 2
- MIMKRVLJPMYKID-UHFFFAOYSA-N 1-ethenoxynonane Chemical compound CCCCCCCCCOC=C MIMKRVLJPMYKID-UHFFFAOYSA-N 0.000 description 2
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 2
- OWTQQPNDSWCHOV-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-(2-hydroxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound OCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO OWTQQPNDSWCHOV-UHFFFAOYSA-N 0.000 description 2
- PGYJSURPYAAOMM-UHFFFAOYSA-N 2-ethenoxy-2-methylpropane Chemical compound CC(C)(C)OC=C PGYJSURPYAAOMM-UHFFFAOYSA-N 0.000 description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- DSSAWHFZNWVJEC-UHFFFAOYSA-N 3-(ethenoxymethyl)heptane Chemical compound CCCCC(CC)COC=C DSSAWHFZNWVJEC-UHFFFAOYSA-N 0.000 description 2
- UWFHYGTWXNRUDH-UHFFFAOYSA-N 3-ethyl-3-[4-[(3-ethyloxetan-3-yl)methoxy]butoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCCCOCC1(CC)COC1 UWFHYGTWXNRUDH-UHFFFAOYSA-N 0.000 description 2
- CGRJJOYCFCCGPX-UHFFFAOYSA-N 3-ethyloxetane Chemical compound CCC1COC1 CGRJJOYCFCCGPX-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N Bisphenol F Natural products C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MJVAVZPDRWSRRC-UHFFFAOYSA-N Menadione Chemical compound C1=CC=C2C(=O)C(C)=CC(=O)C2=C1 MJVAVZPDRWSRRC-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 2
- 150000004056 anthraquinones Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 150000008366 benzophenones Chemical class 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical compound C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 2
- FWFSEYBSWVRWGL-UHFFFAOYSA-N cyclohexene oxide Natural products O=C1CCCC=C1 FWFSEYBSWVRWGL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- UMIKAXKFQJWKCV-UHFFFAOYSA-M diphenyliodanium;4-methylbenzenesulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.C=1C=CC=CC=1[I+]C1=CC=CC=C1 UMIKAXKFQJWKCV-UHFFFAOYSA-M 0.000 description 2
- UUMAFLKWOXKEID-UHFFFAOYSA-N diphenyliodanium;dodecyl benzenesulfonate Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 UUMAFLKWOXKEID-UHFFFAOYSA-N 0.000 description 2
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- BIUZXWXXSCLGNK-UHFFFAOYSA-N ethenoxymethylcyclohexane Chemical compound C=COCC1CCCCC1 BIUZXWXXSCLGNK-UHFFFAOYSA-N 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 2
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WTVXIBRMWGUIMI-UHFFFAOYSA-N trifluoro($l^{1}-oxidanylsulfonyl)methane Chemical group [O]S(=O)(=O)C(F)(F)F WTVXIBRMWGUIMI-UHFFFAOYSA-N 0.000 description 2
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 2
- 239000012953 triphenylsulfonium Substances 0.000 description 2
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 2
- GWPGIMPAYBUFNS-UHFFFAOYSA-N (1,3-dioxo-3a,4,7,7a-tetrahydro-octahydro-1h-4,7-epoxyisoindol-2-yl) 2-(trifluoromethyl)benzenesulfonate Chemical compound FC(F)(F)C1=CC=CC=C1S(=O)(=O)ON1C(=O)C2C(C=C3)OC3C2C1=O GWPGIMPAYBUFNS-UHFFFAOYSA-N 0.000 description 1
- YIWZAOFAGICWPI-UHFFFAOYSA-N (1,3-dioxo-3a,4,7,7a-tetrahydro-octahydro-1h-4,7-epoxyisoindol-2-yl) 4-fluorobenzenesulfonate Chemical compound C1=CC(F)=CC=C1S(=O)(=O)ON1C(=O)C2C(C=C3)OC3C2C1=O YIWZAOFAGICWPI-UHFFFAOYSA-N 0.000 description 1
- UTCZYUIKQJWABL-UHFFFAOYSA-N (1,3-dioxo-3a,4,7,7a-tetrahydro-octahydro-1h-4,7-epoxyisoindol-2-yl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)ON1C(=O)C2C(C=C3)OC3C2C1=O UTCZYUIKQJWABL-UHFFFAOYSA-N 0.000 description 1
- KFMMMYHKGPIRON-UHFFFAOYSA-N (1,3-dioxo-3a,4,7,7a-tetrahydro-octahydro-1h-4,7-epoxyisoindol-2-yl) trifluoromethanesulfonate Chemical compound C1=CC2OC1C1C2C(=O)N(OS(=O)(=O)C(F)(F)F)C1=O KFMMMYHKGPIRON-UHFFFAOYSA-N 0.000 description 1
- FLBURFVEHMDJPO-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) 2-(trifluoromethyl)benzenesulfonate Chemical compound FC(F)(F)C1=CC=CC=C1S(=O)(=O)ON1C(=O)C2=CC=CC=C2C1=O FLBURFVEHMDJPO-UHFFFAOYSA-N 0.000 description 1
- JBRLLSJLVKFBJL-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) 4-(trifluoromethyl)benzenesulfonate Chemical compound C1=CC(C(F)(F)F)=CC=C1S(=O)(=O)ON1C(=O)C2=CC=CC=C2C1=O JBRLLSJLVKFBJL-UHFFFAOYSA-N 0.000 description 1
- MMZCYVBYIOUFEO-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)ON1C(=O)C2=CC=CC=C2C1=O MMZCYVBYIOUFEO-UHFFFAOYSA-N 0.000 description 1
- GYXAHUXQRATWDV-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) trifluoromethanesulfonate Chemical compound C1=CC=C2C(=O)N(OS(=O)(=O)C(F)(F)F)C(=O)C2=C1 GYXAHUXQRATWDV-UHFFFAOYSA-N 0.000 description 1
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- GNWBLLYJQXKPIP-ZOGIJGBBSA-N (1s,3as,3bs,5ar,9ar,9bs,11as)-n,n-diethyl-6,9a,11a-trimethyl-7-oxo-2,3,3a,3b,4,5,5a,8,9,9b,10,11-dodecahydro-1h-indeno[5,4-f]quinoline-1-carboxamide Chemical compound CN([C@@H]1CC2)C(=O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H](C(=O)N(CC)CC)[C@@]2(C)CC1 GNWBLLYJQXKPIP-ZOGIJGBBSA-N 0.000 description 1
- WDKXCMCPUBYZBF-UHFFFAOYSA-N (2,5-dioxo-3,4-diphenylpyrrol-1-yl) 2-(trifluoromethyl)benzenesulfonate Chemical compound FC(F)(F)C1=CC=CC=C1S(=O)(=O)ON1C(=O)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C1=O WDKXCMCPUBYZBF-UHFFFAOYSA-N 0.000 description 1
- KQDCUEMOGIRBNY-UHFFFAOYSA-N (2,5-dioxo-3,4-diphenylpyrrol-1-yl) 4-fluorobenzenesulfonate Chemical compound C1=CC(F)=CC=C1S(=O)(=O)ON1C(=O)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C1=O KQDCUEMOGIRBNY-UHFFFAOYSA-N 0.000 description 1
- YJBHRGZINIFBKJ-UHFFFAOYSA-N (2,5-dioxo-3,4-diphenylpyrrol-1-yl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)ON1C(=O)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C1=O YJBHRGZINIFBKJ-UHFFFAOYSA-N 0.000 description 1
- RLLFCCPTQOZGOL-UHFFFAOYSA-N (2,5-dioxo-3,4-diphenylpyrrol-1-yl) trifluoromethanesulfonate Chemical compound O=C1N(OS(=O)(=O)C(F)(F)F)C(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 RLLFCCPTQOZGOL-UHFFFAOYSA-N 0.000 description 1
- XMKFJAZDRZNWRC-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 2-(trifluoromethyl)benzenesulfonate Chemical compound FC(F)(F)C1=CC=CC=C1S(=O)(=O)ON1C(=O)CCC1=O XMKFJAZDRZNWRC-UHFFFAOYSA-N 0.000 description 1
- PRHKHLYZXJWYMP-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-fluorobenzenesulfonate Chemical compound C1=CC(F)=CC=C1S(=O)(=O)ON1C(=O)CCC1=O PRHKHLYZXJWYMP-UHFFFAOYSA-N 0.000 description 1
- XFJSTBHMLYKHJF-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)ON1C(=O)CCC1=O XFJSTBHMLYKHJF-UHFFFAOYSA-N 0.000 description 1
- YSLWIRRLTICCEK-UHFFFAOYSA-N (3,5-dioxo-4-azatricyclo[5.2.1.02,6]dec-8-en-4-yl) 2-(trifluoromethyl)benzenesulfonate Chemical compound FC(F)(F)C1=CC=CC=C1S(=O)(=O)ON1C(=O)C2C(C=C3)CC3C2C1=O YSLWIRRLTICCEK-UHFFFAOYSA-N 0.000 description 1
- UPJUYJATIOZWDB-UHFFFAOYSA-N (3,5-dioxo-4-azatricyclo[5.2.1.02,6]dec-8-en-4-yl) 4-fluorobenzenesulfonate Chemical compound C1=CC(F)=CC=C1S(=O)(=O)ON1C(=O)C2C(C=C3)CC3C2C1=O UPJUYJATIOZWDB-UHFFFAOYSA-N 0.000 description 1
- UNMJLQGKEDTEKJ-UHFFFAOYSA-N (3-ethyloxetan-3-yl)methanol Chemical compound CCC1(CO)COC1 UNMJLQGKEDTEKJ-UHFFFAOYSA-N 0.000 description 1
- LRIUTQPZISVIHK-FNORWQNLSA-N (3e)-tetradeca-1,3-diene Chemical compound CCCCCCCCCC\C=C\C=C LRIUTQPZISVIHK-FNORWQNLSA-N 0.000 description 1
- ZVWWAXAPXFPIJW-UHFFFAOYSA-N (4-methyl-7-oxabicyclo[4.1.0]heptan-3-yl)methyl hexanoate Chemical compound C(CCCCC)(=O)OCC1CC2C(CC1C)O2 ZVWWAXAPXFPIJW-UHFFFAOYSA-N 0.000 description 1
- MFNBODQBPMDPPQ-UHFFFAOYSA-N (4-tert-butylphenyl)-diphenylsulfanium Chemical compound C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 MFNBODQBPMDPPQ-UHFFFAOYSA-N 0.000 description 1
- UBATWQARCIRXTI-UHFFFAOYSA-N (4-tert-butylphenyl)-diphenylsulfanium dodecyl benzenesulfonate Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 UBATWQARCIRXTI-UHFFFAOYSA-N 0.000 description 1
- ANQXYRAAAFAVKZ-UHFFFAOYSA-M (4-tert-butylphenyl)-diphenylsulfanium;(7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate Chemical compound C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 ANQXYRAAAFAVKZ-UHFFFAOYSA-M 0.000 description 1
- OZAPXBQTSYRBQP-UHFFFAOYSA-M (4-tert-butylphenyl)-diphenylsulfanium;2-(trifluoromethyl)benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1C(F)(F)F.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 OZAPXBQTSYRBQP-UHFFFAOYSA-M 0.000 description 1
- FERZIJWEXHCCFD-UHFFFAOYSA-M (4-tert-butylphenyl)-diphenylsulfanium;4-methylbenzenesulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FERZIJWEXHCCFD-UHFFFAOYSA-M 0.000 description 1
- TVJMXLDVKSKXLF-UHFFFAOYSA-M (4-tert-butylphenyl)-diphenylsulfanium;octane-1-sulfonate Chemical compound CCCCCCCCS([O-])(=O)=O.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 TVJMXLDVKSKXLF-UHFFFAOYSA-M 0.000 description 1
- JYDUADMZYBVVKA-UHFFFAOYSA-M (4-tert-butylphenyl)-diphenylsulfanium;pyrene-1-sulfonate Chemical compound C1=C2C(S(=O)(=O)[O-])=CC=C(C=C3)C2=C2C3=CC=CC2=C1.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 JYDUADMZYBVVKA-UHFFFAOYSA-M 0.000 description 1
- RLAWXWSZTKMPQQ-UHFFFAOYSA-M (4-tert-butylphenyl)-diphenylsulfanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 RLAWXWSZTKMPQQ-UHFFFAOYSA-M 0.000 description 1
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- HHYVKZVPYXHHCG-UHFFFAOYSA-M (7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate;diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C HHYVKZVPYXHHCG-UHFFFAOYSA-M 0.000 description 1
- FJALTVCJBKZXKY-UHFFFAOYSA-M (7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate;triphenylsulfanium Chemical compound C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FJALTVCJBKZXKY-UHFFFAOYSA-M 0.000 description 1
- JGVHCSDWENTQON-UHFFFAOYSA-M (7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate;tris(4-methoxyphenyl)sulfanium Chemical compound C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C.C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 JGVHCSDWENTQON-UHFFFAOYSA-M 0.000 description 1
- GPHWXFINOWXMDN-UHFFFAOYSA-N 1,1-bis(ethenoxy)hexane Chemical compound CCCCCC(OC=C)OC=C GPHWXFINOWXMDN-UHFFFAOYSA-N 0.000 description 1
- XHXSXTIIDBZEKB-UHFFFAOYSA-N 1,2,3,4,5,6,7,8-octamethylanthracene-9,10-dione Chemical compound CC1=C(C)C(C)=C2C(=O)C3=C(C)C(C)=C(C)C(C)=C3C(=O)C2=C1C XHXSXTIIDBZEKB-UHFFFAOYSA-N 0.000 description 1
- CGXVUIBINWTLNT-UHFFFAOYSA-N 1,2,3-tris(ethenoxy)propane Chemical compound C=COCC(OC=C)COC=C CGXVUIBINWTLNT-UHFFFAOYSA-N 0.000 description 1
- USGYMDAUQBQWFU-UHFFFAOYSA-N 1,2,5,6-diepoxycyclooctane Chemical compound C1CC2OC2CCC2OC12 USGYMDAUQBQWFU-UHFFFAOYSA-N 0.000 description 1
- RBACIKXCRWGCBB-UHFFFAOYSA-N 1,2-Epoxybutane Chemical compound CCC1CO1 RBACIKXCRWGCBB-UHFFFAOYSA-N 0.000 description 1
- ZXHDVRATSGZISC-UHFFFAOYSA-N 1,2-bis(ethenoxy)ethane Chemical compound C=COCCOC=C ZXHDVRATSGZISC-UHFFFAOYSA-N 0.000 description 1
- LXSVCBDMOGLGFA-UHFFFAOYSA-N 1,2-bis(ethenoxy)propane Chemical compound C=COC(C)COC=C LXSVCBDMOGLGFA-UHFFFAOYSA-N 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- CJFHXJJYQSTQJN-UHFFFAOYSA-N 1,2-dioctoxycyclohexane-1,2-dicarboxylic acid Chemical compound CCCCCCCCOC1(CCCCC1(C(=O)O)OCCCCCCCC)C(=O)O CJFHXJJYQSTQJN-UHFFFAOYSA-N 0.000 description 1
- LFKLPJRVSHJZPL-UHFFFAOYSA-N 1,2:7,8-diepoxyoctane Chemical compound C1OC1CCCCC1CO1 LFKLPJRVSHJZPL-UHFFFAOYSA-N 0.000 description 1
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 description 1
- MWZJGRDWJVHRDV-UHFFFAOYSA-N 1,4-bis(ethenoxy)butane Chemical compound C=COCCCCOC=C MWZJGRDWJVHRDV-UHFFFAOYSA-N 0.000 description 1
- DYUWIMGIHNMKSD-UHFFFAOYSA-N 1-(2-chloroethoxy)-2-ethenoxyethane Chemical compound ClCCOCCOC=C DYUWIMGIHNMKSD-UHFFFAOYSA-N 0.000 description 1
- AYMDJPGTQFHDSA-UHFFFAOYSA-N 1-(2-ethenoxyethoxy)-2-ethoxyethane Chemical compound CCOCCOCCOC=C AYMDJPGTQFHDSA-UHFFFAOYSA-N 0.000 description 1
- UNMYKPSSIFZORM-UHFFFAOYSA-N 1-(2-ethenoxyethoxy)butane Chemical compound CCCCOCCOC=C UNMYKPSSIFZORM-UHFFFAOYSA-N 0.000 description 1
- LMGYOBQJBQAZKC-UHFFFAOYSA-N 1-(2-ethylphenyl)-2-hydroxy-2-phenylethanone Chemical compound CCC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 LMGYOBQJBQAZKC-UHFFFAOYSA-N 0.000 description 1
- KLWGMEDURRDUPO-UHFFFAOYSA-N 1-(ethenoxymethyl)-4-methylcyclohexane Chemical compound CC1CCC(COC=C)CC1 KLWGMEDURRDUPO-UHFFFAOYSA-N 0.000 description 1
- AWOGBOARESKNBA-UHFFFAOYSA-N 1-[(3-ethyloxetan-3-yl)methoxy]propan-2-ol Chemical compound CC(O)COCC1(CC)COC1 AWOGBOARESKNBA-UHFFFAOYSA-N 0.000 description 1
- DPOPGHCRRJYPMP-UHFFFAOYSA-N 1-[diazo(methylsulfonyl)methyl]sulfonyl-4-methylbenzene Chemical compound CC1=CC=C(S(=O)(=O)C(=[N+]=[N-])S(C)(=O)=O)C=C1 DPOPGHCRRJYPMP-UHFFFAOYSA-N 0.000 description 1
- GYQQFWWMZYBCIB-UHFFFAOYSA-N 1-[diazo-(4-methylphenyl)sulfonylmethyl]sulfonyl-4-methylbenzene Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1=CC=C(C)C=C1 GYQQFWWMZYBCIB-UHFFFAOYSA-N 0.000 description 1
- DNJRKFKAFWSXSE-UHFFFAOYSA-N 1-chloro-2-ethenoxyethane Chemical compound ClCCOC=C DNJRKFKAFWSXSE-UHFFFAOYSA-N 0.000 description 1
- PNEWSCXZLUPKET-UHFFFAOYSA-N 1-chloro-4-ethenoxybutane Chemical compound ClCCCCOC=C PNEWSCXZLUPKET-UHFFFAOYSA-N 0.000 description 1
- BOCJQSFSGAZAPQ-UHFFFAOYSA-N 1-chloroanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl BOCJQSFSGAZAPQ-UHFFFAOYSA-N 0.000 description 1
- SAMJGBVVQUEMGC-UHFFFAOYSA-N 1-ethenoxy-2-(2-ethenoxyethoxy)ethane Chemical compound C=COCCOCCOC=C SAMJGBVVQUEMGC-UHFFFAOYSA-N 0.000 description 1
- HWCLMKDWXUGDKL-UHFFFAOYSA-N 1-ethenoxy-2-ethoxyethane Chemical compound CCOCCOC=C HWCLMKDWXUGDKL-UHFFFAOYSA-N 0.000 description 1
- GXZPMXGRNUXGHN-UHFFFAOYSA-N 1-ethenoxy-2-methoxyethane Chemical compound COCCOC=C GXZPMXGRNUXGHN-UHFFFAOYSA-N 0.000 description 1
- HAVHPQLVZUALTL-UHFFFAOYSA-N 1-ethenoxypropan-2-ol Chemical compound CC(O)COC=C HAVHPQLVZUALTL-UHFFFAOYSA-N 0.000 description 1
- OVGRCEFMXPHEBL-UHFFFAOYSA-N 1-ethenoxypropane Chemical compound CCCOC=C OVGRCEFMXPHEBL-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- CSCSROFYRUZJJH-UHFFFAOYSA-N 1-methoxyethane-1,2-diol Chemical compound COC(O)CO CSCSROFYRUZJJH-UHFFFAOYSA-N 0.000 description 1
- XLPJNCYCZORXHG-UHFFFAOYSA-N 1-morpholin-4-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCOCC1 XLPJNCYCZORXHG-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- AOGNACZDZNOTSN-UHFFFAOYSA-N 2,3-dihydroxy-1,2-diphenylpropan-1-one Chemical compound C=1C=CC=CC=1C(O)(CO)C(=O)C1=CC=CC=C1 AOGNACZDZNOTSN-UHFFFAOYSA-N 0.000 description 1
- ZJLXRNBSNRIMDE-UHFFFAOYSA-N 2,3-dihydroxy-1,2-diphenylpropan-1-one;2-(trifluoromethyl)benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1C(F)(F)F.C=1C=CC=CC=1C(O)(CO)C(=O)C1=CC=CC=C1 ZJLXRNBSNRIMDE-UHFFFAOYSA-N 0.000 description 1
- QWMSEWKMSSHZHV-UHFFFAOYSA-N 2,3-dihydroxy-1,2-diphenylpropan-1-one;trifluoromethanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)F.C=1C=CC=CC=1C(O)(CO)C(=O)C1=CC=CC=C1 QWMSEWKMSSHZHV-UHFFFAOYSA-N 0.000 description 1
- KIJPZYXCIHZVGP-UHFFFAOYSA-N 2,3-dimethylanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=C(C)C(C)=C2 KIJPZYXCIHZVGP-UHFFFAOYSA-N 0.000 description 1
- LZWVPGJPVCYAOC-UHFFFAOYSA-N 2,3-diphenylanthracene-9,10-dione Chemical compound C=1C=CC=CC=1C=1C=C2C(=O)C3=CC=CC=C3C(=O)C2=CC=1C1=CC=CC=C1 LZWVPGJPVCYAOC-UHFFFAOYSA-N 0.000 description 1
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 1
- UCSGWEMRGIONEW-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-bis(2-methoxyphenyl)-1h-imidazole Chemical class COC1=CC=CC=C1C1=C(C=2C(=CC=CC=2)OC)NC(C=2C(=CC=CC=2)Cl)=N1 UCSGWEMRGIONEW-UHFFFAOYSA-N 0.000 description 1
- NSWNXQGJAPQOID-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-diphenyl-1h-imidazole Chemical class ClC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 NSWNXQGJAPQOID-UHFFFAOYSA-N 0.000 description 1
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 1
- BBBUAWSVILPJLL-UHFFFAOYSA-N 2-(2-ethylhexoxymethyl)oxirane Chemical compound CCCCC(CC)COCC1CO1 BBBUAWSVILPJLL-UHFFFAOYSA-N 0.000 description 1
- UIHRWPYOTGCOJP-UHFFFAOYSA-N 2-(2-fluorophenyl)-4,5-diphenyl-1h-imidazole Chemical class FC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 UIHRWPYOTGCOJP-UHFFFAOYSA-N 0.000 description 1
- QWWFWKBCBKKEAG-UHFFFAOYSA-N 2-(4-fluorophenyl)isoindole-1,3-dione Chemical compound C1=CC(F)=CC=C1N1C(=O)C2=CC=CC=C2C1=O QWWFWKBCBKKEAG-UHFFFAOYSA-N 0.000 description 1
- YSUQLAYJZDEMOT-UHFFFAOYSA-N 2-(butoxymethyl)oxirane Chemical compound CCCCOCC1CO1 YSUQLAYJZDEMOT-UHFFFAOYSA-N 0.000 description 1
- SJIXRGNQPBQWMK-UHFFFAOYSA-N 2-(diethylamino)ethyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCOC(=O)C(C)=C SJIXRGNQPBQWMK-UHFFFAOYSA-N 0.000 description 1
- UIUSRIAANRCPGF-UHFFFAOYSA-N 2-(ethenoxymethyl)oxolane Chemical compound C=COCC1CCCO1 UIUSRIAANRCPGF-UHFFFAOYSA-N 0.000 description 1
- GDQWVPZPTFVESV-UHFFFAOYSA-M 2-(trifluoromethyl)benzenesulfonate;triphenylsulfanium Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 GDQWVPZPTFVESV-UHFFFAOYSA-M 0.000 description 1
- XDJIPVJMROYCCZ-UHFFFAOYSA-M 2-(trifluoromethyl)benzenesulfonate;tris(4-methoxyphenyl)sulfanium Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1C(F)(F)F.C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDJIPVJMROYCCZ-UHFFFAOYSA-M 0.000 description 1
- MJNGDTGKCWWIOP-UHFFFAOYSA-N 2-[(3-ethyloxetan-3-yl)methoxy]ethanol Chemical compound OCCOCC1(CC)COC1 MJNGDTGKCWWIOP-UHFFFAOYSA-N 0.000 description 1
- SNAGVRNJNARVRV-UHFFFAOYSA-N 2-[(3-ethyloxetan-3-yl)methoxymethyl]oxolane Chemical compound C1CCOC1COCC1(CC)COC1 SNAGVRNJNARVRV-UHFFFAOYSA-N 0.000 description 1
- HHRACYLRBOUBKM-UHFFFAOYSA-N 2-[(4-tert-butylphenoxy)methyl]oxirane Chemical compound C1=CC(C(C)(C)C)=CC=C1OCC1OC1 HHRACYLRBOUBKM-UHFFFAOYSA-N 0.000 description 1
- SYEWHONLFGZGLK-UHFFFAOYSA-N 2-[1,3-bis(oxiran-2-ylmethoxy)propan-2-yloxymethyl]oxirane Chemical compound C1OC1COCC(OCC1OC1)COCC1CO1 SYEWHONLFGZGLK-UHFFFAOYSA-N 0.000 description 1
- DVSDTPMZVLDKRT-UHFFFAOYSA-N 2-[2-[(3-ethyloxetan-3-yl)methoxy]butoxy]ethanol Chemical compound OCCOCC(CC)OCC1(CC)COC1 DVSDTPMZVLDKRT-UHFFFAOYSA-N 0.000 description 1
- SHKUUQIDMUMQQK-UHFFFAOYSA-N 2-[4-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COCCCCOCC1CO1 SHKUUQIDMUMQQK-UHFFFAOYSA-N 0.000 description 1
- WTYYGFLRBWMFRY-UHFFFAOYSA-N 2-[6-(oxiran-2-ylmethoxy)hexoxymethyl]oxirane Chemical compound C1OC1COCCCCCCOCC1CO1 WTYYGFLRBWMFRY-UHFFFAOYSA-N 0.000 description 1
- SAFWZKVQMVOANB-UHFFFAOYSA-N 2-[tert-butylsulfonyl(diazo)methyl]sulfonyl-2-methylpropane Chemical compound CC(C)(C)S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C(C)(C)C SAFWZKVQMVOANB-UHFFFAOYSA-N 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- NKISWXJTINBMHB-UHFFFAOYSA-N 2-decyl-3-(oxiran-2-yl)oxirane Chemical compound CCCCCCCCCCC1OC1C1OC1 NKISWXJTINBMHB-UHFFFAOYSA-N 0.000 description 1
- MPGABYXKKCLIRW-UHFFFAOYSA-N 2-decyloxirane Chemical compound CCCCCCCCCCC1CO1 MPGABYXKKCLIRW-UHFFFAOYSA-N 0.000 description 1
- IELQNQLDZIHBPK-UHFFFAOYSA-N 2-ethenoxy-1-ethoxy-1-methoxyethane Chemical compound CCOC(OC)COC=C IELQNQLDZIHBPK-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- OUELSYYMNDBLHV-UHFFFAOYSA-N 2-ethenoxyethylbenzene Chemical compound C=COCCC1=CC=CC=C1 OUELSYYMNDBLHV-UHFFFAOYSA-N 0.000 description 1
- GNUGVECARVKIPH-UHFFFAOYSA-N 2-ethenoxypropane Chemical compound CC(C)OC=C GNUGVECARVKIPH-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- TZLVUWBGUNVFES-UHFFFAOYSA-N 2-ethyl-5-methylpyrazol-3-amine Chemical compound CCN1N=C(C)C=C1N TZLVUWBGUNVFES-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- VZMLJEYQUZKERO-UHFFFAOYSA-N 2-hydroxy-1-(2-methylphenyl)-2-phenylethanone Chemical compound CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 VZMLJEYQUZKERO-UHFFFAOYSA-N 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical class OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- QPXVRLXJHPTCPW-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-(4-propan-2-ylphenyl)propan-1-one Chemical compound CC(C)C1=CC=C(C(=O)C(C)(C)O)C=C1 QPXVRLXJHPTCPW-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- CRPJNHJJAPGGAT-UHFFFAOYSA-N 2-hydroxy-2-phenyl-1-(2-propylphenyl)ethanone Chemical compound CCCC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 CRPJNHJJAPGGAT-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- RIWRBSMFKVOJMN-UHFFFAOYSA-N 2-methyl-1-phenylpropan-2-ol Chemical compound CC(C)(O)CC1=CC=CC=C1 RIWRBSMFKVOJMN-UHFFFAOYSA-N 0.000 description 1
- AAMHBRRZYSORSH-UHFFFAOYSA-N 2-octyloxirane Chemical compound CCCCCCCCC1CO1 AAMHBRRZYSORSH-UHFFFAOYSA-N 0.000 description 1
- AXYQEGMSGMXGGK-UHFFFAOYSA-N 2-phenoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(=O)C(C=1C=CC=CC=1)OC1=CC=CC=C1 AXYQEGMSGMXGGK-UHFFFAOYSA-N 0.000 description 1
- NTZCFGZBDDCNHI-UHFFFAOYSA-N 2-phenylanthracene-9,10-dione Chemical compound C=1C=C2C(=O)C3=CC=CC=C3C(=O)C2=CC=1C1=CC=CC=C1 NTZCFGZBDDCNHI-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- PMNLUUOXGOOLSP-UHFFFAOYSA-M 2-sulfanylpropanoate Chemical compound CC(S)C([O-])=O PMNLUUOXGOOLSP-UHFFFAOYSA-M 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- WADCPEMKIBAJHH-UHFFFAOYSA-N 3,4-diphenylpyrrole-2,5-dione Chemical compound O=C1NC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 WADCPEMKIBAJHH-UHFFFAOYSA-N 0.000 description 1
- HGCHXPWVBFSUDT-UHFFFAOYSA-N 3-(2-butoxyethoxymethyl)-3-ethyloxetane Chemical compound CCCCOCCOCC1(CC)COC1 HGCHXPWVBFSUDT-UHFFFAOYSA-N 0.000 description 1
- WKXMZIDBVDIVME-UHFFFAOYSA-N 3-[(3-ethyloxetan-3-yl)methoxy]-2,2-bis[(3-ethyloxetan-3-yl)methoxymethyl]propan-1-ol Chemical compound C1OCC1(CC)COCC(CO)(COCC1(CC)COC1)COCC1(CC)COC1 WKXMZIDBVDIVME-UHFFFAOYSA-N 0.000 description 1
- MKNOYISMZFDLQP-UHFFFAOYSA-N 3-[1-[2-(oxetan-3-yl)butoxy]butan-2-yl]oxetane Chemical compound C1OCC1C(CC)COCC(CC)C1COC1 MKNOYISMZFDLQP-UHFFFAOYSA-N 0.000 description 1
- UNRSSYMGHYSZOU-UHFFFAOYSA-N 3-ethenyl-7-oxido-7-oxoniabicyclo[4.1.0]heptane Chemical compound C(=C)C1CC2C(CC1)[O+]2[O-] UNRSSYMGHYSZOU-UHFFFAOYSA-N 0.000 description 1
- FVGDNYRHKDREFL-UHFFFAOYSA-N 3-ethyl-3-(1-phenoxyethoxymethyl)oxetane Chemical compound C=1C=CC=CC=1OC(C)OCC1(CC)COC1 FVGDNYRHKDREFL-UHFFFAOYSA-N 0.000 description 1
- BIDWUUDRRVHZLQ-UHFFFAOYSA-N 3-ethyl-3-(2-ethylhexoxymethyl)oxetane Chemical compound CCCCC(CC)COCC1(CC)COC1 BIDWUUDRRVHZLQ-UHFFFAOYSA-N 0.000 description 1
- PWGAXPBJOGFFMY-UHFFFAOYSA-N 3-ethyl-3-(2-methylpropoxymethoxymethyl)oxetane Chemical compound CC(C)COCOCC1(CC)COC1 PWGAXPBJOGFFMY-UHFFFAOYSA-N 0.000 description 1
- DILMQZOSIJKYHA-UHFFFAOYSA-N 3-ethyl-3-[(2,3,4,5,6-pentabromophenoxy)methyl]oxetane Chemical compound BrC=1C(Br)=C(Br)C(Br)=C(Br)C=1OCC1(CC)COC1 DILMQZOSIJKYHA-UHFFFAOYSA-N 0.000 description 1
- FQUZJULGTSCUDF-UHFFFAOYSA-N 3-ethyl-3-[(2,3,4,5,6-pentachlorophenoxy)methyl]oxetane Chemical compound ClC=1C(Cl)=C(Cl)C(Cl)=C(Cl)C=1OCC1(CC)COC1 FQUZJULGTSCUDF-UHFFFAOYSA-N 0.000 description 1
- PBXYBVUSKINNJL-UHFFFAOYSA-N 3-ethyl-3-[(2,3,4-tribromophenoxy)methyl]oxetane Chemical compound C=1C=C(Br)C(Br)=C(Br)C=1OCC1(CC)COC1 PBXYBVUSKINNJL-UHFFFAOYSA-N 0.000 description 1
- LNZCVOLEQJDCJG-UHFFFAOYSA-N 3-ethyl-3-[(2-methylphenoxy)methyl]oxetane Chemical compound C=1C=CC=C(C)C=1OCC1(CC)COC1 LNZCVOLEQJDCJG-UHFFFAOYSA-N 0.000 description 1
- FTBYVLSOTLYHLU-UHFFFAOYSA-N 3-ethyl-3-[(4-fluorophenyl)methoxymethyl]oxetane Chemical compound C=1C=C(F)C=CC=1COCC1(CC)COC1 FTBYVLSOTLYHLU-UHFFFAOYSA-N 0.000 description 1
- PENKVNGNXDMJKV-UHFFFAOYSA-N 3-ethyl-3-[(4-methoxyphenyl)methoxymethyl]oxetane Chemical compound C=1C=C(OC)C=CC=1COCC1(CC)COC1 PENKVNGNXDMJKV-UHFFFAOYSA-N 0.000 description 1
- SLNCKLVYLZHRKK-UHFFFAOYSA-N 3-ethyl-3-[2-[(3-ethyloxetan-3-yl)methoxy]ethoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCOCC1(CC)COC1 SLNCKLVYLZHRKK-UHFFFAOYSA-N 0.000 description 1
- ARTCZOWQELAGLQ-UHFFFAOYSA-N 3-ethyl-3-[2-[2-[2-[(3-ethyloxetan-3-yl)methoxy]ethoxy]ethoxy]ethoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCOCCOCCOCC1(CC)COC1 ARTCZOWQELAGLQ-UHFFFAOYSA-N 0.000 description 1
- WUGFSEWXAWXRTM-UHFFFAOYSA-N 3-ethyl-3-[2-[2-[2-[2-[(3-ethyloxetan-3-yl)methoxy]ethoxy]ethoxy]ethoxy]ethoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCOCCOCCOCCOCC1(CC)COC1 WUGFSEWXAWXRTM-UHFFFAOYSA-N 0.000 description 1
- UXEOSBGULDWPRJ-UHFFFAOYSA-N 3-ethyl-3-[5-[(3-ethyloxetan-3-yl)methoxy]pentoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCCCCOCC1(CC)COC1 UXEOSBGULDWPRJ-UHFFFAOYSA-N 0.000 description 1
- GBDPVIKGIRHANI-UHFFFAOYSA-N 3-ethyl-3-[6-[(3-ethyloxetan-3-yl)methoxy]hexoxymethyl]oxetane Chemical compound C1OCC1(CC)COCCCCCCOCC1(CC)COC1 GBDPVIKGIRHANI-UHFFFAOYSA-N 0.000 description 1
- HPINXYMPRYQBGF-UHFFFAOYSA-N 3-ethyl-3-[[3-[(3-ethyloxetan-3-yl)methoxy]-2,2-bis[(3-ethyloxetan-3-yl)methoxymethyl]propoxy]methyl]oxetane Chemical compound C1OCC1(CC)COCC(COCC1(CC)COC1)(COCC1(CC)COC1)COCC1(CC)COC1 HPINXYMPRYQBGF-UHFFFAOYSA-N 0.000 description 1
- LMIOYAVXLAOXJI-UHFFFAOYSA-N 3-ethyl-3-[[4-[(3-ethyloxetan-3-yl)methoxymethyl]phenyl]methoxymethyl]oxetane Chemical compound C=1C=C(COCC2(CC)COC2)C=CC=1COCC1(CC)COC1 LMIOYAVXLAOXJI-UHFFFAOYSA-N 0.000 description 1
- ARXVXVOLXMVYIT-UHFFFAOYSA-N 3-methylbutyl 2-(dimethylamino)benzoate Chemical compound CC(C)CCOC(=O)C1=CC=CC=C1N(C)C ARXVXVOLXMVYIT-UHFFFAOYSA-N 0.000 description 1
- JKIGHOGKGARVAG-UHFFFAOYSA-N 3-phenyl-1h-benzimidazole-2-thione Chemical compound S=C1NC2=CC=CC=C2N1C1=CC=CC=C1 JKIGHOGKGARVAG-UHFFFAOYSA-N 0.000 description 1
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 1
- GPIUUMROPXDNRH-UHFFFAOYSA-N 3647-74-3 Chemical compound C1C2C3C(=O)NC(=O)C3C1C=C2 GPIUUMROPXDNRH-UHFFFAOYSA-N 0.000 description 1
- RRXFVFZYPPCDAW-UHFFFAOYSA-N 4-(7-oxabicyclo[4.1.0]heptan-4-ylmethoxymethyl)-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2OC2CC1COCC1CC2OC2CC1 RRXFVFZYPPCDAW-UHFFFAOYSA-N 0.000 description 1
- HYYPKCMPDGCDHE-UHFFFAOYSA-N 4-(7-oxabicyclo[4.1.0]heptan-4-ylmethyl)-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2OC2CC1CC1CC2OC2CC1 HYYPKCMPDGCDHE-UHFFFAOYSA-N 0.000 description 1
- IMDQDSLAUVKLAO-UHFFFAOYSA-N 4-[2-(4-carboxy-7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]-7-oxabicyclo[4.1.0]heptane-4-carboxylic acid Chemical compound C1CC2OC2CC1(C(O)=O)CCC1(C(=O)O)CC2OC2CC1 IMDQDSLAUVKLAO-UHFFFAOYSA-N 0.000 description 1
- UGVRJVHOJNYEHR-UHFFFAOYSA-N 4-chlorobenzophenone Chemical compound C1=CC(Cl)=CC=C1C(=O)C1=CC=CC=C1 UGVRJVHOJNYEHR-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 1
- YXZXRYDYTRYFAF-UHFFFAOYSA-M 4-methylbenzenesulfonate;triphenylsulfanium Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 YXZXRYDYTRYFAF-UHFFFAOYSA-M 0.000 description 1
- JQXTVVFQEOOULY-UHFFFAOYSA-M 4-methylbenzenesulfonate;tris(4-methoxyphenyl)sulfanium Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 JQXTVVFQEOOULY-UHFFFAOYSA-M 0.000 description 1
- FDWQGNULGGFFDP-UHFFFAOYSA-N 5-ethenyl-7-oxabicyclo[4.1.0]heptane Chemical compound C=CC1CCCC2OC12 FDWQGNULGGFFDP-UHFFFAOYSA-N 0.000 description 1
- XAYDWGMOPRHLEP-UHFFFAOYSA-N 6-ethenyl-7-oxabicyclo[4.1.0]heptane Chemical compound C1CCCC2OC21C=C XAYDWGMOPRHLEP-UHFFFAOYSA-N 0.000 description 1
- RBHIUNHSNSQJNG-UHFFFAOYSA-N 6-methyl-3-(2-methyloxiran-2-yl)-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2(C)OC2CC1C1(C)CO1 RBHIUNHSNSQJNG-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
- VKHBVHQNIFITEO-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl hexanoate Chemical compound C1C(COC(=O)CCCCC)CCC2OC21 VKHBVHQNIFITEO-UHFFFAOYSA-N 0.000 description 1
- CAKHDJPNOKXIED-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-5-ylmethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1CCCC2OC12 CAKHDJPNOKXIED-UHFFFAOYSA-N 0.000 description 1
- ISRHJUURKPOCPC-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-5-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CCCC2OC12 ISRHJUURKPOCPC-UHFFFAOYSA-N 0.000 description 1
- MTRFEWTWIPAXLG-UHFFFAOYSA-N 9-phenylacridine Chemical compound C1=CC=CC=C1C1=C(C=CC=C2)C2=NC2=CC=CC=C12 MTRFEWTWIPAXLG-UHFFFAOYSA-N 0.000 description 1
- PQJUJGAVDBINPI-UHFFFAOYSA-N 9H-thioxanthene Chemical compound C1=CC=C2CC3=CC=CC=C3SC2=C1 PQJUJGAVDBINPI-UHFFFAOYSA-N 0.000 description 1
- 101001074560 Arabidopsis thaliana Aquaporin PIP1-2 Proteins 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- MFPCEMBEILFODY-UHFFFAOYSA-N CCC1(COC1)COCCOCC(C)C Chemical compound CCC1(COC1)COCCOCC(C)C MFPCEMBEILFODY-UHFFFAOYSA-N 0.000 description 1
- RZNNLFXPTJSZGZ-UHFFFAOYSA-N CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1.C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1.C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 RZNNLFXPTJSZGZ-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- GXBYFVGCMPJVJX-UHFFFAOYSA-N Epoxybutene Chemical compound C=CC1CO1 GXBYFVGCMPJVJX-UHFFFAOYSA-N 0.000 description 1
- CQUVCIHJKLHWEQ-UHFFFAOYSA-N F[C]Cl.Cl[C]F Chemical compound F[C]Cl.Cl[C]F CQUVCIHJKLHWEQ-UHFFFAOYSA-N 0.000 description 1
- 101000720524 Gordonia sp. (strain TY-5) Acetone monooxygenase (methyl acetate-forming) Proteins 0.000 description 1
- 241000511976 Hoya Species 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- APJWCDFWYYOHTG-UHFFFAOYSA-N O=C1C(OC2=CC=CC=C2C1)=O.O=C1C(OC2=CC=CC=C2C1)=O Chemical compound O=C1C(OC2=CC=CC=C2C1)=O.O=C1C(OC2=CC=CC=C2C1)=O APJWCDFWYYOHTG-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical class C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- LFOXEOLGJPJZAA-UHFFFAOYSA-N [(2,6-dimethoxybenzoyl)-(2,4,4-trimethylpentyl)phosphoryl]-(2,6-dimethoxyphenyl)methanone Chemical compound COC1=CC=CC(OC)=C1C(=O)P(=O)(CC(C)CC(C)(C)C)C(=O)C1=C(OC)C=CC=C1OC LFOXEOLGJPJZAA-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- ARNIZPSLPHFDED-UHFFFAOYSA-N [4-(dimethylamino)phenyl]-(4-methoxyphenyl)methanone Chemical compound C1=CC(OC)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 ARNIZPSLPHFDED-UHFFFAOYSA-N 0.000 description 1
- MZVQCMJNVPIDEA-UHFFFAOYSA-N [CH2]CN(CC)CC Chemical group [CH2]CN(CC)CC MZVQCMJNVPIDEA-UHFFFAOYSA-N 0.000 description 1
- LZFMLQDLGWUUNE-UHFFFAOYSA-N [S+]1=CC=CC=C1.[S+]1=CC=CC=C1 Chemical compound [S+]1=CC=CC=C1.[S+]1=CC=CC=C1 LZFMLQDLGWUUNE-UHFFFAOYSA-N 0.000 description 1
- QFKJMDYQKVPGNM-UHFFFAOYSA-N [benzenesulfonyl(diazo)methyl]sulfonylbenzene Chemical compound C=1C=CC=CC=1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1=CC=CC=C1 QFKJMDYQKVPGNM-UHFFFAOYSA-N 0.000 description 1
- NVJPBZCLWGTJKD-UHFFFAOYSA-N [bis(4-tert-butylphenyl)-lambda3-iodanyl] trifluoromethanesulfonate Chemical compound CC(C)(C)c1ccc(cc1)[I](OS(=O)(=O)C(F)(F)F)c1ccc(cc1)C(C)(C)C NVJPBZCLWGTJKD-UHFFFAOYSA-N 0.000 description 1
- GLGXSTXZLFQYKJ-UHFFFAOYSA-N [cyclohexylsulfonyl(diazo)methyl]sulfonylcyclohexane Chemical compound C1CCCCC1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1CCCCC1 GLGXSTXZLFQYKJ-UHFFFAOYSA-N 0.000 description 1
- FDTRPMUFAMGRNM-UHFFFAOYSA-N [diazo(trifluoromethylsulfonyl)methyl]sulfonyl-trifluoromethane Chemical compound FC(F)(F)S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C(F)(F)F FDTRPMUFAMGRNM-UHFFFAOYSA-N 0.000 description 1
- FEVJONIJUZTKGL-UHFFFAOYSA-N [tert-butylsulfonyl(diazo)methyl]sulfonylcyclohexane Chemical compound CC(C)(C)S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1CCCCC1 FEVJONIJUZTKGL-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 239000000999 acridine dye Substances 0.000 description 1
- 150000001251 acridines Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000007754 air knife coating Methods 0.000 description 1
- HTKFORQRBXIQHD-UHFFFAOYSA-N allylthiourea Chemical compound NC(=S)NCC=C HTKFORQRBXIQHD-UHFFFAOYSA-N 0.000 description 1
- 229960001748 allylthiourea Drugs 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229940027998 antiseptic and disinfectant acridine derivative Drugs 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000008365 aromatic ketones Chemical class 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- SPPXDWMPHYCBIE-UHFFFAOYSA-M benzenesulfonate;(4-tert-butylphenyl)-diphenylsulfanium Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 SPPXDWMPHYCBIE-UHFFFAOYSA-M 0.000 description 1
- SNXNDROUPCGLKH-UHFFFAOYSA-M benzenesulfonate;bis(4-tert-butylphenyl)iodanium Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 SNXNDROUPCGLKH-UHFFFAOYSA-M 0.000 description 1
- BLBKTJIPOBRUGU-UHFFFAOYSA-M benzenesulfonate;triphenylsulfanium Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 BLBKTJIPOBRUGU-UHFFFAOYSA-M 0.000 description 1
- SYLQTBHYIFCIBY-UHFFFAOYSA-M benzenesulfonate;tris(4-methoxyphenyl)sulfanium Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1.C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 SYLQTBHYIFCIBY-UHFFFAOYSA-M 0.000 description 1
- QCHNSJNRFSOCLJ-UHFFFAOYSA-N benzenesulfonylmethylsulfonylbenzene Chemical compound C=1C=CC=CC=1S(=O)(=O)CS(=O)(=O)C1=CC=CC=C1 QCHNSJNRFSOCLJ-UHFFFAOYSA-N 0.000 description 1
- LHMRXAIRPKSGDE-UHFFFAOYSA-N benzo[a]anthracene-7,12-dione Chemical compound C1=CC2=CC=CC=C2C2=C1C(=O)C1=CC=CC=C1C2=O LHMRXAIRPKSGDE-UHFFFAOYSA-N 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical class C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- DNFSNYQTQMVTOK-UHFFFAOYSA-N bis(4-tert-butylphenyl)iodanium Chemical compound C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 DNFSNYQTQMVTOK-UHFFFAOYSA-N 0.000 description 1
- UCMYAOIWHWZZFL-UHFFFAOYSA-N bis(4-tert-butylphenyl)iodanium dodecyl benzenesulfonate Chemical compound C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1.CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 UCMYAOIWHWZZFL-UHFFFAOYSA-N 0.000 description 1
- MDUKBVGQQFOMPC-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;(7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate Chemical compound C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 MDUKBVGQQFOMPC-UHFFFAOYSA-M 0.000 description 1
- ILYGGWOGJKVSLD-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;2-(trifluoromethyl)benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1C(F)(F)F.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 ILYGGWOGJKVSLD-UHFFFAOYSA-M 0.000 description 1
- UEJFJTOGXLEPIV-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;4-methylbenzenesulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 UEJFJTOGXLEPIV-UHFFFAOYSA-M 0.000 description 1
- LAJARNUSVWJMRX-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;butane-1-sulfonate Chemical compound CCCCS([O-])(=O)=O.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 LAJARNUSVWJMRX-UHFFFAOYSA-M 0.000 description 1
- LXDIWXFMMBMIPN-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;octane-1-sulfonate Chemical compound CCCCCCCCS([O-])(=O)=O.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 LXDIWXFMMBMIPN-UHFFFAOYSA-M 0.000 description 1
- HVBMNOLKTGUMCO-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;pyrene-1-sulfonate Chemical compound C1=C2C(S(=O)(=O)[O-])=CC=C(C=C3)C2=C2C3=CC=CC2=C1.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 HVBMNOLKTGUMCO-UHFFFAOYSA-M 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 150000001634 bornane-2,3-dione derivatives Chemical class 0.000 description 1
- 125000006226 butoxyethyl group Chemical group 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 208000012839 conversion disease Diseases 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- DNWBGZGLCKETOT-UHFFFAOYSA-N cyclohexane;1,3-dioxane Chemical compound C1CCCCC1.C1COCOC1 DNWBGZGLCKETOT-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- CDIDIFAUPNRMRZ-UHFFFAOYSA-N difluoro-(2,3,4,5,6-pentafluorophenyl)methanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C1=C(F)C(F)=C(F)C(F)=C1F CDIDIFAUPNRMRZ-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- LRYJJIPJQVBUNA-UHFFFAOYSA-M diphenyliodanium;2-(trifluoromethyl)benzenesulfonate Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.[O-]S(=O)(=O)C1=CC=CC=C1C(F)(F)F LRYJJIPJQVBUNA-UHFFFAOYSA-M 0.000 description 1
- FDXCBBBNMIJMLF-UHFFFAOYSA-M diphenyliodanium;octane-1-sulfonate Chemical compound CCCCCCCCS([O-])(=O)=O.C=1C=CC=CC=1[I+]C1=CC=CC=C1 FDXCBBBNMIJMLF-UHFFFAOYSA-M 0.000 description 1
- OVAZMTZNAIEREQ-UHFFFAOYSA-M diphenyliodanium;pyrene-1-sulfonate Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.C1=C2C(S(=O)(=O)[O-])=CC=C(C=C3)C2=C2C3=CC=CC2=C1 OVAZMTZNAIEREQ-UHFFFAOYSA-M 0.000 description 1
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 1
- PODOEQVNFJSWIK-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethoxyphenyl)methanone Chemical compound COC1=CC(OC)=CC(OC)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 PODOEQVNFJSWIK-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical group [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- ABAQRSKVXZGOKY-UHFFFAOYSA-N dodecyl benzenesulfonate triphenylsulfanium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1.CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 ABAQRSKVXZGOKY-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- AZDCYKCDXXPQIK-UHFFFAOYSA-N ethenoxymethylbenzene Chemical compound C=COCC1=CC=CC=C1 AZDCYKCDXXPQIK-UHFFFAOYSA-N 0.000 description 1
- 125000005448 ethoxyethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- ORBFAMHUKZLWSD-UHFFFAOYSA-N ethyl 2-(dimethylamino)benzoate Chemical compound CCOC(=O)C1=CC=CC=C1N(C)C ORBFAMHUKZLWSD-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- FSPSELPMWGWDRY-UHFFFAOYSA-N m-Methylacetophenone Chemical compound CC(=O)C1=CC=CC(C)=C1 FSPSELPMWGWDRY-UHFFFAOYSA-N 0.000 description 1
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 229940086559 methyl benzoin Drugs 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- IQTRBJRORQFYLN-UHFFFAOYSA-N molport-019-739-976 Chemical compound C1=CC(C)=CC=C1S(=O)(=O)ON1C(=O)C2C(C=C3)CC3C2C1=O IQTRBJRORQFYLN-UHFFFAOYSA-N 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- YCMDNBGUNDHOOD-UHFFFAOYSA-N n -((trifluoromethylsulfonyl)oxy)-5-norbornene-2,3-dicarboximide Chemical compound C1=CC2CC1C1C2C(=O)N(OS(=O)(=O)C(F)(F)F)C1=O YCMDNBGUNDHOOD-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- AUBNVERMHFAAKM-UHFFFAOYSA-M octane-1-sulfonate;triphenylsulfanium Chemical compound CCCCCCCCS([O-])(=O)=O.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 AUBNVERMHFAAKM-UHFFFAOYSA-M 0.000 description 1
- APUFRTKFJSHTBQ-UHFFFAOYSA-M octane-1-sulfonate;tris(4-methoxyphenyl)sulfanium Chemical compound CCCCCCCCS([O-])(=O)=O.C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 APUFRTKFJSHTBQ-UHFFFAOYSA-M 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000002921 oxetanes Chemical class 0.000 description 1
- YNXCGLKMOXLBOD-UHFFFAOYSA-N oxolan-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CCCO1 YNXCGLKMOXLBOD-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000005704 oxymethylene group Chemical group [H]C([H])([*:2])O[*:1] 0.000 description 1
- LXTZRIBXKVRLOA-UHFFFAOYSA-N padimate a Chemical compound CCCCCOC(=O)C1=CC=C(N(C)C)C=C1 LXTZRIBXKVRLOA-UHFFFAOYSA-N 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 125000001484 phenothiazinyl group Chemical class C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- CLERGDGGVLATDT-UHFFFAOYSA-M pyrene-1-sulfonate;triphenylsulfanium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1.C1=C2C(S(=O)(=O)[O-])=CC=C(C=C3)C2=C2C3=CC=CC2=C1 CLERGDGGVLATDT-UHFFFAOYSA-M 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical compound C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 229940066767 systemic antihistamines phenothiazine derivative Drugs 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- RLGKSXCGHMXELQ-ZRDIBKRKSA-N trans-2-styrylquinoline Chemical compound C=1C=C2C=CC=CC2=NC=1\C=C\C1=CC=CC=C1 RLGKSXCGHMXELQ-ZRDIBKRKSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- OXWFVYDECNDRMT-UHFFFAOYSA-M trifluoromethanesulfonate;tris(4-methoxyphenyl)sulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 OXWFVYDECNDRMT-UHFFFAOYSA-M 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WUKMCKCDYKBLBG-UHFFFAOYSA-N tris(4-methoxyphenyl)sulfanium Chemical compound C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 WUKMCKCDYKBLBG-UHFFFAOYSA-N 0.000 description 1
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- INRGAWUQFOBNKL-UHFFFAOYSA-N {4-[(Vinyloxy)methyl]cyclohexyl}methanol Chemical compound OCC1CCC(COC=C)CC1 INRGAWUQFOBNKL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0023—Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0076—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0079—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the method of application or removal of the mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2033/00—Use of polymers of unsaturated acids or derivatives thereof as moulding material
- B29K2033/04—Polymers of esters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2105/00—Condition, form or state of moulded material or of the material to be shaped
- B29K2105/0005—Condition, form or state of moulded material or of the material to be shaped containing compounding ingredients
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2909/00—Use of inorganic materials not provided for in groups B29K2803/00 - B29K2807/00, as mould material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2333/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
- C08J2333/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
- C08J2333/06—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C08J2333/08—Homopolymers or copolymers of acrylic acid esters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/0113—Female die used for patterning or transferring, e.g. temporary substrate having recessed pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/086—Using an inert gas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/087—Using a reactive gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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Abstract
提供一种具有高填充性并能够在通过利用光压印法生产膜时降低脱模力的光固化性组合物,和使用该光固化性组合物的膜的制造方法。光固化性组合物为包括至少下列组分(A)至组分(C)的光固化性组合物:(A)可聚合化合物;(B)光聚合引发剂;和(C)由下列通式(1)表示的表面活性剂:Rf1‑Rc‑X (1)。
Description
技术领域
本发明涉及光固化性组合物和使用该组合物的膜的制造方法。
背景技术
UV纳米压印法为一种在如被加工基材等基板上生产具有预定图案形状的抗蚀膜的方法,并具有例如下述包括步骤(a)至(d)的制造过程:
(a)配置抗蚀剂(光固化性组合物)的配置步骤;
(b)使光固化性组合物与具有在其表面上形成的微细凹凸图案的模具彼此相接触的模具接触步骤;
(c)用光照射光固化性组合物的光照射步骤;和
(d)在光照射步骤之后将光固化性组合物和模具彼此脱离的脱模步骤。
应当注意的是,通过包括步骤(a)至(d)的制造过程生产的抗蚀膜的图案形状通过将模具的凹凸图案转印至配制在基板上的抗蚀膜上而形成。
另外,在利用UV纳米压印法时,降低脱模步骤(步骤(d))中从抗蚀剂固化产物中脱离模具所需的力,即脱模力,已成为重要课题。这是因为下述原因。当脱模力大时,产生诸如图案缺陷发生和由于基板从平台(stage)浮起引起的定位精度(positioning accuracy)下降等问题。
另外,在脱模步骤之前要进行的模具接触步骤(步骤(b))中,光固化性组合物填充入模具与基板之间的间隙以及形成于模具的表面上的凹凸图案中。然而,在模具接触步骤中,已经发生了下列关于光固化性组合物的填充性(filling property)的问题。需要长时间填充光固化性组合物,并且由于光固化性组合物不完全填充入预定空间导致缺陷发生。
同时,要用于UV纳米压印法的光固化性组合物为,例如专利文献1中公开的由可聚合化合物、聚合引发剂和氟类表面活性剂中的至少一种形成的组合物。另外,专利文献1公开了其中烃链键合至全氟烷基链的化合物,或具有其中乙氧基链、甲氧基链或硅氧烷键合至全氟烷基链的结构的化合物用作氟类表面活性剂。
另一方面,专利文献2公开了具有全氟聚醚结构的化合物用作氟类表面活性剂。
引用列表
专利文献
专利文献1:日本专利申请特开2007-084625号公报
专利文献2:日本专利申请特开2006-80447号公报
专利文献3:国际专利WO2006/114958A
非专利文献
非专利文献1:Microelectric Engineering,Vol.82,P.60-70,2005
非专利文献2:Journal of Physical Chemistry,Vol.58,236,1954
发明内容
发明要解决的问题
如上所述,很久以来,涉及在UV纳米压印法中将氟类表面活性剂添加到光固化性组合物以降低与模具的脱模力的技术便是已知的。然而,在仅仅添加氟类表面活性剂之后,与模具的脱模力仍然是大的。
另外,如非专利文献1所公开的,光固化性组合物的填充性趋于随着其表面张力增加或其与模具和基板的接触角减小而升高。然而,将氟类表面活性剂添加到光固化性组合物倾向于降低表面张力或增大与模具的接触角。
为了解决该问题已完成了本发明,并且本发明旨在提供一种具有高填充性且在通过利用光压印法生产膜时能够减小脱模力的光固化性组合物,以及使用该光固化性组合物的膜的制造方法。
用于解决问题的方案
本发明的光固化性组合物为包括至少下列组分(A)至组分(C)的光固化性组合物:
(A)可聚合化合物;
(B)光聚合引发剂;和
(C)由下列通式(1)表示的表面活性剂:
Rf1-Rc-X (1)
在通式(1)中,Rf1表示仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基,Rc表示聚环氧乙烷基团、聚环氧丙烷基团或亚烷基,和X表示羟基、羧基、磺基、氨基、烷氧基,或仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基,条件是当X表示烷氧基或仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基时,Rf1和X可彼此相同或不同。
根据本发明,可提供具有高填充性并且在通过利用光压印法生产膜时能够减小脱模力的光固化性组合物,以及使用该光固化性组合物的膜的制造方法。
参考附图,从下列示例性实施方案的描述中,本发明的进一步特征将变得显而易见。
附图说明
图1A和1B为示出在从模具形成步骤至脱模步骤的过程中表面活性剂的配置模式的示意性截面图。
图2A和2B为示出在从模具形成步骤至脱模步骤的过程中表面活性剂的配置模式的示意性截面图。
图3A、3B1、3B2、3C、3D、3E和3F为示出本发明膜的制造方法的实施方案的实例的示意性截面图。
具体实施方式
下文中,适当参考附图来详细描述本发明的实施方案,条件是本发明不限于下述实施方案。另外,在本发明中,通过例如基于本领域技术人员的普通知识将下述实施方案适当改变和修改到该改变和修改不偏离其要旨的程度而得的实施方案也包括在本发明的范畴内。
另外,稍后描述的根据本发明的膜的制造方法为,例如涉及利用光压印法生产膜的方法。这里,在利用光压印法时,优选具有尺寸为1nm至10mm的图案的膜的形成方法,并更优选具有尺寸为约10nm至100μm的图案的膜的形成方法。用于借助光生产具有纳米尺寸(nanosize)(1nm至100nm)的图案(凹凸结构)的膜的图案形成技术通常称为UV纳米压印法。本发明利用UV纳米压印法。
(光固化性组合物)
本发明的光固化性组合物包含至少下列组分(A)至组分(C):
(A)可聚合化合物;
(B)光聚合引发剂;和
(C)由下列通式(1)表示的表面活性剂:
Rf1-Rc-X (1)
下文中,详细描述各组分。
<可聚合化合物(组分(A))>
本发明中,可聚合化合物(组分(A))为与由光聚合引发剂(组分(B))产生的聚合因子(如自由基或阳离子)反应的化合物。另外,在与聚合因子反应之后,可聚合化合物(组分(A))通过链反应(聚合反应)形成由高分子化合物形成的膜。
构成本发明光固化性组合物的可聚合化合物的实例包括自由基可聚合化合物和阳离子可聚合化合物。
具有一个以上的丙烯酰基或甲基丙烯酰基的化合物优选作为自由基可聚合化合物。具有一个以上的乙烯基醚基团、乙氧基或氧杂环丁烷基(oxetanyl groups)的化合物优选作为阳离子可聚合化合物。
(可聚合化合物(A)-自由基可聚合组分)
作为具有一个丙烯酰基或甲基丙烯酰基的单官能(甲基)丙烯酸类化合物,列举例如,苯氧基乙基(甲基)丙烯酸酯、苯氧基-2-甲基乙基(甲基)丙烯酸酯、苯氧基乙氧基乙基(甲基)丙烯酸酯、3-苯氧基-2-羟丙基(甲基)丙烯酸酯、2-苯基苯氧基乙基(甲基)丙烯酸酯、4-苯基苯氧基乙基(甲基)丙烯酸酯、3-(2-苯基苯基)-2-羟丙基(甲基)丙烯酸酯、EO-改性的对枯基苯基(甲基)丙烯酸酯、2-溴苯氧基乙基(甲基)丙烯酸酯、2,4-二溴苯氧基乙基(甲基)丙烯酸酯、2,4,6-三溴苯氧基乙基(甲基)丙烯酸酯、EO-改性的苯氧基(甲基)丙烯酸酯、PO-改性的苯氧基(甲基)丙烯酸酯、聚氧乙烯壬基苯基醚(甲基)丙烯酸酯、异冰片基(甲基)丙烯酸酯、1-金刚烷基(甲基)丙烯酸酯、2-甲基-2-金刚烷基(甲基)丙烯酸酯、2-乙基-2-金刚烷基(甲基)丙烯酸酯、冰片基(甲基)丙烯酸酯、(甲基)丙烯酸三环癸酯、(甲基)丙烯酸二环戊酯、(甲基)丙烯酸二环戊烯酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸4-丁基环己酯、丙烯酰基吗啉、(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸2-羟丁酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸正戊酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸异戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸异十八烷基酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸四氢糠酯、丁氧基乙基(甲基)丙烯酸酯、乙氧基二甘醇(甲基)丙烯酸酯、聚乙二醇单(甲基)丙烯酸酯、聚丙二醇单(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯、乙氧基乙基(甲基)丙烯酸酯、甲氧基聚乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯、双丙酮(甲基)丙烯酰胺、异丁氧基甲基(甲基)丙烯酰胺、N,N-二甲基(甲基)丙烯酰胺、叔辛基(甲基)丙烯酰胺、二甲氨基乙基(甲基)丙烯酸酯、二乙氨基乙基(甲基)丙烯酸酯、7-氨基-3,7-二甲基辛基(甲基)丙烯酸酯、N,N-二乙基(甲基)丙烯酰胺和N,N-二甲氨基丙基(甲基)丙烯酰胺等,但不限于此。
作为单官能(甲基)丙烯酸类化合物的商品,列举Aronix M101、M102、M110、M111、M113、M117、M5700、TO-1317、M120、M150和M156(所有上述由TOAGOSEI CO.,LTD制造);MEDOL10、MIBDOL10、CHDOL10、MMDOL30、MEDOL30、MIBDOL30、CHDOL30、LA、IBXA、2-MTA、HPA,和Viscoat#150、#155、#158、#190、#192、#193、#220、#2000、#2100和#2150(所有上述由OSAKA ORGANIC CHEMICAL INDUSTRY LTD.制造);光丙烯酸酯(Light Acrylate)BO-A、EC-A、DMP-A、THF-A、HOP-A、HOA-MPE、HOA-MPL、PO-A、P-200A、NP-4EA和NP-8EA,和环氧酯M-600A(所有上述由KYOEISHA CHEMICAL Co.,LTD制造);KAYARAD TC110S、R-564和R-128H(所有上述由NIPPON KAYAKU Co.,Ltd.制造);NK酯AMP-10G和AMP-20G(上述二者由Shin-NakamuraChemical Co.,Ltd.制造);FA-511A、512A和513A(所有上述由Hitachi Chemical Co.,Ltd.制造);PHE、CEA、PHE-2、PHE-4、BR-31、BR-31M和BR-32(所有上述由Dai-ichi KogyoSeiyaku Co.,Ltd.制造);VP(由BASF制造);和ACMO、DMAA和DMAPAA(所有上述由KOHJINCo.,Ltd.制造)等,但不限于此。
各自具有两个以上的丙烯酰基或甲基丙烯酰基的多官能(甲基)丙烯酸类化合物的实例包括,但不限于,三羟甲基丙烷二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、EO-改性的三羟甲基丙烷三(甲基)丙烯酸酯、PO-改性的三羟甲基丙烷三(甲基)丙烯酸酯、EO,PO-改性的三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、四甘醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、三(2-羟乙基)异氰脲酸酯三(甲基)丙烯酸酯、三(丙烯酰氧基)异氰脲酸酯、双(羟甲基)三环癸烷二(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、EO-改性的2,2-双(4-((甲基)丙烯酰氧基)苯基)丙烷、PO-改性的2,2-双(4-((甲基)丙烯酰氧基)苯基)丙烷,和EO,PO-改性的2,2-双(4-((甲基)丙烯酰氧基)苯基)丙烷。
多官能(甲基)丙烯酸类化合物的商品的实例包括,但不限于:Upimer UV SA1002和SA2007(上述二者均由Mitsubishi Chemical Corporation制造);Viscoat#195、#230、#215、#260、#335HP、#295、#300、#360、#700、GPT和3PA(所有上述由OSAKA ORGANIC CHEMICALINDUSTRY LTD.制造);光丙烯酸酯4EG-A、9EG-A、NP-A、DCP-A、BP-4EA、BP-4PA、TMP-A、PE-3A、PE-4A和DPE-6A(所有上述由KYOEISHA CHEMICAL Co.,LTD制造);KAYARAD PET-30、TMPTA、R-604、DPHA,DPCA-20、-30、-60和-120,和HX-620、D-310和D-330(所有上述由NIPPONKAYAKU Co.,Ltd.制造);Aronix M208、M210、M215、M220、M240、M305、M309、M310、M315、M325和M400(所有上述由TOAGOSEI CO.,LTD制造);和Lipoxy VR-77、VR-60和VR-90(所有上述由SHOWA HIGHPOLYMER CO.,LTD.制造)。
可单独使用上述列出的自由基可聚合化合物中的一种,或可组合使用其两种以上。注意,在上述化合物组中,术语"(甲基)丙烯酸酯"意指丙烯酸酯和与之相应的甲基丙烯酸酯。术语"(甲基)丙烯酰基"意指丙烯酰基和与之相应的甲基丙烯酰基。缩写"EO"是指环氧乙烷,和术语"EO-改性的化合物"意指具有环氧乙烷基团的嵌段结构(block structure)的化合物。另外,缩写"PO"是指环氧丙烷,术语"PO-改性的化合物"意指具有环氧丙烷基团的嵌段结构的化合物。
(可聚合化合物(A)-阳离子可聚合组分)
各自具有一个乙烯基醚基团的化合物的实例包括,但不限于,甲基乙烯基醚、乙基乙烯基醚、丙基乙烯基醚、正丁基乙烯基醚、叔丁基乙烯基醚、2-乙基己基乙烯基醚、正壬基乙烯基醚、月桂基乙烯基醚、环己基乙烯基醚、环己基甲基乙烯基醚、4-甲基环己基甲基乙烯基醚、苄基乙烯基醚、二环戊烯基乙烯基醚、2-二环戊烯氧基乙基(dicyclopentenoxyethyl)乙烯基醚、甲氧基乙基乙烯基醚、乙氧基乙基乙烯基醚、丁氧基乙基乙烯基醚、甲氧基乙氧乙基乙烯基醚、乙氧基乙氧乙基乙烯基醚、甲氧基聚乙二醇乙烯基醚、四氢糠基乙烯基醚、2-羟乙基乙烯基醚、2-羟丙基乙烯基醚、4-羟丁基乙烯基醚、4-羟甲基环己基甲基乙烯基醚、二甘醇单乙烯基醚、聚乙二醇乙烯基醚、氯乙基乙烯基醚、氯丁基乙烯基醚、氯乙氧基乙基乙烯基醚、苯基乙基乙烯基醚和苯氧基聚乙二醇乙烯基醚。
各自具有两个以上的乙烯基醚基团的化合物的实例包括,但不限于:二乙烯基醚类如乙二醇二乙烯基醚、二甘醇二乙烯基醚、聚乙二醇二乙烯基醚、丙二醇二乙烯基醚、丁二醇二乙烯基醚、己二醇二乙烯基醚、双酚A烯化氧二乙烯基醚和双酚F烯化氧二乙烯基醚;和多官能乙烯基醚类如三羟甲基乙烷三乙烯基醚、三羟甲基丙烷三乙烯基醚、二-三羟甲基丙烷四乙烯基醚、甘油三乙烯基醚、季戊四醇四乙烯基醚、二季戊四醇五乙烯基醚、二季戊四醇六乙烯基醚、三羟甲基丙烷三乙烯基醚的环氧乙烷加合物、三羟甲基丙烷三乙烯基醚的环氧丙烷加合物、二-三羟甲基丙烷四乙烯基醚的环氧乙烷加合物、二-三羟甲基丙烷四乙烯基醚的环氧丙烷加合物、季戊四醇四乙烯基醚的环氧乙烷加合物、季戊四醇四乙烯基醚的环氧丙烷加合物、二季戊四醇六乙烯基醚的环氧乙烷加合物和二季戊四醇六乙烯基醚的环氧丙烷加合物。
各自具有一个环氧基的化合物的实例包括,但不限于,苯基缩水甘油醚、对叔丁基苯基缩水甘油醚、丁基缩水甘油醚、2-乙基己基缩水甘油醚、烯丙基缩水甘油醚、1,2-环氧丁烷、1,3-丁二烯一氧化物、1,2-环氧十二烷、表氯醇、1,2-环氧癸烷、苯乙烯氧化物(styrene oxide)、环己烯氧化物(cyclohexene oxide)、3-甲基丙烯酰氧基甲基环己烯氧化物、3-丙烯酰氧基甲基环己烯氧化物和3-乙烯基环己烯氧化物。
各自具有两个以上的环氧基的化合物的实例包括,但不限于,双酚A二缩水甘油醚、双酚F二缩水甘油醚、双酚S二缩水甘油醚、溴化双酚A二缩水甘油醚、溴化双酚F二缩水甘油醚、溴化双酚S二缩水甘油醚、环氧酚醛清漆树脂、氢化双酚A二缩水甘油醚、氢化双酚F二缩水甘油醚、氢化双酚S二缩水甘油醚、3,4-环氧环己基甲基-3',4'-环氧基环己烷羧酸酯、2-(3,4-环氧环己基-5,5-螺-3,4-环氧基)环己烷-间-二噁烷、双(3,4-环氧环己基甲基)己酸酯、乙烯基环己烯氧化物、4-乙烯基环氧环己烷、双(3,4-环氧基-6-甲基环己基甲基)己酸酯、3,4-环氧基-6-甲基环己基-3',4'-环氧基-6'-甲基环己烷羧酸酯、亚甲基双(3,4-环氧环己烷)、二环戊二烯二环氧化物、乙二醇的二(3,4-环氧环己基甲基)醚、亚乙基双(3,4-环氧环己烷羧酸酯)、二辛基环氧基六氢邻苯二甲酸酯、二-2-乙基己基环氧基六氢邻苯二甲酸酯、1,4-丁二醇二缩水甘油醚、1,6-己二醇二缩水甘油醚、甘油三缩水甘油醚、三羟甲基丙烷三缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、1,1,3-十四碳二烯二氧化物(tetradecadiene dioxide)、柠檬烯二氧化物、1,2,7,8-二环氧基辛烷和1,2,5,6-二环氧基环辛烷。
各自具有一个氧杂环丁烷基的化合物的实例包括,但不限于,3-乙基-3-羟甲基氧杂环丁烷、3-(甲基)烯丙氧基甲基-3-乙基氧杂环丁烷、(3-乙基-3-氧杂环丁烷基甲氧基)甲基苯、4-氟[1-(3-乙基-3-氧杂环丁烷基甲氧基)甲基]苯、4-甲氧基[1-(3-乙基-3-氧杂环丁烷基甲氧基)甲基]苯、[1-(3-乙基-3-氧杂环丁烷基甲氧基)乙基]苯基醚、异丁氧基甲基(3-乙基-3-氧杂环丁烷基甲基)醚、异冰片氧基乙基(3-乙基-3-氧杂环丁烷基甲基)醚、异冰片基(3-乙基-3-氧杂环丁烷基甲基)醚、2-乙基己基(3-乙基-3-氧杂环丁烷基甲基)醚、乙基二甘醇(3-乙基-3-氧杂环丁烷基甲基)醚、二环戊二烯(3-乙基-3-氧杂环丁烷基甲基)醚、二环戊烯氧基乙基(3-乙基-3-氧杂环丁烷基甲基)醚、二环戊烯基(3-乙基-3-氧杂环丁烷基甲基)醚、四氢糠基(3-乙基-3-氧杂环丁烷基甲基)醚、四溴苯基(3-乙基-3-氧杂环丁烷基甲基)醚、2-四溴苯氧基乙基(3-乙基-3-氧杂环丁烷基甲基)醚、三溴苯基(3-乙基-3-氧杂环丁烷基甲基)醚、2-三溴苯氧基乙基(3-乙基-3-氧杂环丁烷基甲基)醚、2-羟乙基(3-乙基-3-氧杂环丁烷基甲基)醚、2-羟丙基(3-乙基-3-氧杂环丁烷基甲基)醚、丁氧基乙基(3-乙基-3-氧杂环丁烷基甲基)醚、五氯苯基(3-乙基-3-氧杂环丁烷基甲基)醚、五溴苯基(3-乙基-3-氧杂环丁烷基甲基)醚和冰片基(3-乙基-3-氧杂环丁烷基甲基)醚。
各自具有两个以上的氧杂环丁烷基的化合物的实例包括,但不限于,多官能氧杂环丁烷如3,7-双(3-氧杂环丁烷基)-5-氧杂-壬烷、3,3'-(1,3-(2-亚甲基)丙烷二基双(氧亚甲基))双(3-乙基氧杂环丁烷)(3,3'-(1,3-(2-methylenyl)propanediyl bis(oxymethylene))bis(3-ethyloxetane))、1,4-双[(3-乙基-3-氧杂环丁烷基甲氧基)甲基]苯、1,2-双[(3-乙基-3-氧杂环丁烷基甲氧基)甲基]乙烷、1,3-双[(3-乙基-3-氧杂环丁烷基甲氧基)甲基]丙烷、乙二醇双(3-乙基-3-氧杂环丁烷基甲基)醚、二环戊烯基双(3-乙基-3-氧杂环丁烷基甲基)醚、三甘醇双(3-乙基-3-氧杂环丁烷基甲基)醚、四甘醇双(3-乙基-3-氧杂环丁烷基甲基)醚、三环癸烷二基(tricyclodecanediyl)二亚甲基(3-乙基-3-氧杂环丁烷基甲基)醚、三羟甲基丙烷三(3-乙基-3-氧杂环丁烷基甲基)醚、1,4-双(3-乙基-3-氧杂环丁烷基甲氧基)丁烷、1,6-双(3-乙基-3-氧杂环丁烷基甲氧基)己烷、季戊四醇三(3-乙基-3-氧杂环丁烷基甲基)醚、季戊四醇四(3-乙基-3-氧杂环丁烷基甲基)醚、聚乙二醇双(3-乙基-3-氧杂环丁烷基甲基)醚、二季戊四醇六(3-乙基-3-氧杂环丁烷基甲基)醚、二季戊四醇五(3-乙基-3-氧杂环丁烷基甲基)醚、二季戊四醇四(3-乙基-3-氧杂环丁烷基甲基)醚、己内酯-改性的二季戊四醇六(3-乙基-3-氧杂环丁烷基甲基)醚、己内酯-改性的二季戊四醇五(3-乙基-3-氧杂环丁烷基甲基)醚、二-三羟甲基丙烷四(3-乙基-3-氧杂环丁烷基甲基)醚、EO-改性的双酚A双(3-乙基-3-氧杂环丁烷基甲基)醚、PO-改性的双酚A双(3-乙基-3-氧杂环丁烷基甲基)醚、EO-改性的氢化双酚A双(3-乙基-3-氧杂环丁烷基甲基)醚、PO-改性的氢化双酚A双(3-乙基-3-氧杂环丁烷基甲基)醚和EO-改性的双酚F(3-乙基-3-氧杂环丁烷基甲基)醚。
可单独使用上述列出的阳离子可聚合化合物中的一种,或可组合使用其两种以上。应当注意的是,在上述化合物组中,缩写"EO"表示环氧乙烷,和术语"EO-改性的化合物"意指具有环氧乙烷基团的嵌段结构的化合物。另外,缩写"PO"表示环氧丙烷,和术语"PO-改性的化合物"意指具有环氧丙烷基团的嵌段结构的化合物。另外,术语"氢化"意指氢原子加成至苯环等的C=C双键。
<光聚合引发剂(组分(B))>
本发明中,光聚合引发剂(组分(B))为通过感应具有预定波长的光而产生聚合因子(如自由基或阳离子)的化合物。具体地,当作为组分(A)的可聚合化合物为自由基可聚合化合物时,光聚合引发剂(组分(B))为用光(放射线如红外线、可见光、紫外线、远红外线、X-射线,或带电粒子射线如电子射线)产生自由基的聚合引发剂。另一方面,当作为组分(A)的可聚合化合物为阳离子可聚合化合物时,光聚合引发剂为用光产生酸的聚合引发剂。
作为自由基产生剂的化合物的实例包括,但不限于:可具有取代基的2,4,5-三芳基咪唑二聚体,如2-(邻氯苯基)-4,5-二苯基咪唑二聚体、2-(邻氯苯基)-4,5-二(甲氧基苯基)咪唑二聚体、2-(邻氟苯基)-4,5-二苯基咪唑二聚体,和2-(邻或对甲氧基苯基)-4,5-二苯基咪唑二聚体;二苯甲酮衍生物如二苯甲酮、N,N′-四甲基-4,4′-二氨基二苯甲酮(米蚩酮(Michler's ketone))、N,N′-四乙基-4,4′-二氨基二苯甲酮、4-甲氧基-4′-二甲氨基二苯甲酮、4-氯二苯甲酮、4,4'-二甲氧基二苯甲酮,和4,4'-二氨基二苯甲酮;芳族酮衍生物如2-苄基-2-二甲氨基-1-(4-吗啉基苯基)-丁酮-1,2-甲基-1-[4-(甲基硫代)苯基]-2-吗啉基-丙烷-1-酮(propanon-1-one);醌类如2-乙基蒽醌、菲醌、2-叔丁基蒽醌、八甲基蒽醌、1,2-苯并蒽醌、2,3-苯并蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌和2,3-二甲基蒽醌;苯偶姻醚衍生物如苯偶姻甲基醚、苯偶姻乙基醚和苯偶姻苯基醚;苯偶姻衍生物如苯偶姻、甲基苯偶姻、乙基苯偶姻和丙基苯偶姻;苄基衍生物如苄基二甲基缩酮;吖啶衍生物如9-苯基吖啶和1,7-双(9,9′-吖啶基)庚烷;N-苯基甘氨酸衍生物如N-苯基甘氨酸;苯乙酮衍生物如苯乙酮、3-甲基苯乙酮、苯乙酮苄基缩酮、1-羟基环己基苯基酮,和2,2-二甲氧基-2-苯基苯乙酮;噻吨酮衍生物如噻吨酮、二乙基噻吨酮、2-异丙基噻吨酮和2-氯噻吨酮;和呫吨酮(xanthone)、芴酮、苯甲醛、芴、蒽醌、三苯胺、咔唑、1-(4-异丙基苯基)-2-羟基-2-甲基丙烷-1-酮、2-羟基-2-甲基-1-苯基丙烷-1-酮、2,4,6-三甲基苯甲酰基二苯基氧化膦,和双(2,6-二甲氧基苯甲酰基)-2,4,4-三甲基戊基氧化膦。应当注意的是,可单独使用上述列出的化合物中的一种,或可组合使用其两种以上。
光自由基产生剂的商品的实例包括,但不限于,Irgacure 184、369、651、500、819、907、784和2959,CGI-1700、-1750和-1850,CG24-61,和Darocur 1116和1173(所有上述由Ciba Japan制造),Lucirin TPO、LR8893和LR8970(所有上述由BASF制造),和Ubecryl P36(由UCB制造)。
作为要用作用光产生酸的聚合引发剂的化合物,例如,给出鎓盐化合物、砜化合物、磺酸酯化合物、磺酰亚胺化合物和重氮甲烷化合物。该化合物不限于这些化合物。在本发明的这些化合物中,优选使用鎓盐。
鎓盐化合物的实例包括碘鎓盐、锍盐(sulfonium salt)、鏻盐、重氮盐、铵盐和吡啶鎓盐。鎓盐化合物的具体实例包括,但不限于,双(4-叔丁基苯基)碘鎓全氟正丁烷磺酸盐、双(4-叔丁基苯基)碘鎓三氟甲烷磺酸盐、双(4-叔丁基苯基)碘鎓2-三氟甲基苯磺酸盐、双(4-叔丁基苯基)碘鎓芘磺酸盐、双(4-叔丁基苯基)碘鎓正十二烷基苯磺酸盐、双(4-叔丁基苯基)碘鎓对甲苯磺酸盐、双(4-叔丁基苯基)碘鎓苯磺酸盐、双(4-叔丁基苯基)碘鎓10-樟脑磺酸盐、双(4-叔丁基苯基)碘鎓正辛烷磺酸盐、二苯基碘鎓全氟正丁烷磺酸盐、二苯基碘鎓三氟甲烷磺酸盐、二苯基碘鎓2-三氟甲基苯磺酸盐、二苯基碘鎓芘磺酸盐、二苯基碘鎓正十二烷基苯磺酸盐、二苯基碘鎓对甲苯磺酸盐、二苯基碘鎓苯苯磺酸盐、二苯基碘鎓10-樟脑磺酸盐、二苯基碘鎓正辛烷磺酸盐、三苯基锍全氟-正丁烷磺酸盐、三苯基锍三氟甲烷磺酸盐、三苯基锍2-三氟甲基苯磺酸盐、三苯基锍芘磺酸盐、三苯基锍正十二烷基苯磺酸盐、三苯基锍对甲苯磺酸盐、三苯基锍苯磺酸盐、三苯基锍10-樟脑磺酸盐、三苯基锍正辛烷磺酸盐、二苯基(4-叔丁基苯基)锍全氟-正丁烷磺酸盐、二苯基(4-叔丁基苯基)锍三氟甲烷磺酸盐、二苯基(4-叔丁基苯基)锍2-三氟甲基苯磺酸盐、二苯基(4-叔丁基苯基)锍芘磺酸盐、二苯基(4-叔丁基苯基)锍正十二烷基苯磺酸盐、二苯基(4-叔丁基苯基)锍对甲苯磺酸盐、二苯基(4-叔丁基苯基)锍苯磺酸盐、二苯基(4-叔丁基苯基)锍10-樟脑磺酸盐、二苯基(4-叔丁基苯基)锍正辛烷磺酸盐、三(4-甲氧基苯基)锍全氟-正丁烷磺酸盐、三(4-甲氧基苯基)锍三氟甲烷磺酸盐、三(4-甲氧基苯基)锍2-三氟甲基苯磺酸盐、三(4-甲氧基苯基)锍芘磺酸盐、三(4-甲氧基苯基)锍正十二烷基苯磺酸盐、三(4-甲氧基苯基)锍对甲苯磺酸盐、三(4-甲氧基苯基)锍苯磺酸盐、三(4-甲氧基苯基)锍10-樟脑磺酸盐,和三(4-甲氧基苯基)锍正辛烷磺酸盐。
砜化合物的实例可包括β-酮砜、β-磺酰基砜和其α-重氮化合物。砜化合物的具体实例包括,但不限于,苯甲酰甲基(phenacyl)苯基砜、2,4,6-三甲苯基苯甲酰甲基砜、双(苯基磺酰基)甲烷和4-三苯甲酰甲基砜。
磺酸酯化合物的实例可包括烷基磺酸酯、卤代烷基磺酸酯、芳基磺酸酯和亚氨基磺酸酯。磺酸酯化合物的具体实例包括,但不限于,α-羟甲基苯偶姻全氟-正丁烷磺酸酯、α-羟甲基苯偶姻三氟甲烷磺酸酯和α-羟甲基苯偶姻2-三氟甲基苯磺酸酯。
磺酰亚胺化合物的具体实例包括,但不限于,N-(三氟甲基磺酰氧基)琥珀酰亚胺、N-(三氟甲基磺酰氧基)邻苯二甲酰亚胺、N-(三氟甲基磺酰氧基)二苯基马来酰亚胺、N-(三氟甲基磺酰氧基)二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(三氟甲基磺酰氧基)-7-氧杂二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(三氟甲基磺酰氧基)二环[2.2.1]庚-5,6-氧基-2,3-二甲酰亚胺、N-(三氟甲基磺酰氧基)萘酰亚胺、N-(10-樟脑磺酰氧基)琥珀酰亚胺、N-(10-樟脑磺酰氧基)邻苯二甲酰亚胺、N-(10-樟脑磺酰氧基)二苯基马来酰亚胺、N-(10-樟脑磺酰氧基)二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(10-樟脑磺酰氧基)-7-氧杂二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(10-樟脑磺酰氧基)二环[2.2.1]庚-5,6-氧基-2,3-二甲酰亚胺、N-(10-樟脑磺酰氧基)萘酰亚胺、N-(4-甲基苯基磺酰氧基)琥珀酰亚胺、N-(4-甲基苯基磺酰氧基)邻苯二甲酰亚胺、N-(4-甲基苯基磺酰氧基)二苯基马来酰亚胺、N-(4-甲基苯基磺酰氧基)二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(4-甲基苯基磺酰氧基)-7-氧杂二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(4-甲基苯基磺酰氧基)二环[2.2.1]庚-5,6-氧基-2,3-二甲酰亚胺、N-(4-甲基苯基磺酰氧基)萘酰亚胺、N-(2-三氟甲基苯基磺酰氧基)琥珀酰亚胺、N-(2-三氟甲基苯基磺酰氧基)邻苯二甲酰亚胺、N-(2-三氟甲基苯基磺酰氧基)二苯基马来酰亚胺、N-(2-三氟甲基苯基磺酰氧基)二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(2-三氟甲基苯基磺酰氧基)-7-氧杂二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(2-三氟甲基苯基磺酰氧基)二环[2.2.1]庚-5,6-氧基-2,3-二甲酰亚胺、N-(2-三氟甲基苯基磺酰氧基)萘酰亚胺、N-(4-氟苯基磺酰氧基)琥珀酰亚胺、N-(4-氟苯基)邻苯二甲酰亚胺、N-(4-氟苯基磺酰氧基)二苯基马来酰亚胺、N-(4-氟苯基磺酰氧基)二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(4-氟苯基磺酰氧基)-7-氧杂二环[2.2.1]庚-5-烯-2,3-二甲酰亚胺、N-(4-氟苯基磺酰氧基)二环[2.2.1]庚-5,6-氧基-2,3-二甲酰亚胺,和N-(4-氟苯基磺酰氧基)萘酰亚胺。
重氮甲烷化合物的具体实例包括,但不限于,双(三氟甲基磺酰基)重氮甲烷、双(环己基磺酰基)重氮甲烷、双(苯基磺酰基)重氮甲烷、双(对甲苯磺酰基)重氮甲烷、甲基磺酰基对甲苯磺酰基重氮甲烷、(环己基磺酰基)(1,1-二甲基乙基磺酰基)重氮甲烷和双(1,1-二甲基乙基磺酰基)重氮甲烷。
这些光产酸剂(photoacid generators)中,优选鎓盐化合物。本发明中,可单独使用光产酸剂中的一种,或可将其两种以上作为混合物使用。
作为组分(B)的聚合引发剂的配混比相对于作为组分(A)的可聚合化合物的总量为0.01wt%以上且10wt%以下,优选为0.1wt%以上且7wt%以下。如果聚合引发剂的配混比小于0.01wt%,则其固化速率下降,从而导致较低的反应效率。另一方面,如果聚合引发剂的配混比超过10wt%,则光固化性组合物的固化产物的机械性能不良。
<表面活性剂(组分(C))>
本发明中,表面活性剂(组分(C))为由下列通式(1)表示的化合物。
Rf1-Rc-X (1)
通式(1)中,Rf1表示仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基。由Rf1表示的取代基为例如下示取代基。然而,本发明不限于此。
(★表示与Rc的键合手(bonding hand)。)
通式(1)中,Rc表示二价取代基,具体为聚环氧乙烷基团、聚环氧丙烷基团或亚烷基。
由Rc表示的聚环氧乙烷基团具体为由下式表示的二价取代基。
-(OCH2CH2)a-
(a表示1以上的整数,优选1以上且25以下的整数。)
由Rc表示的聚环氧丙烷基团具体为由下列式(i)和式(ii)表示的二价取代基之一。
-(OCH2CH(CH3))b- (i)
(式(i)中,b表示1以上的整数,优选1以上且25以下的整数。)
-(OCH2CH2CH2)b- (ii)
(式(ii)中,b表示1以上的整数,优选1以上且25以下的整数。)
由Rc表示的亚烷基具体为由下式表示的二价取代基。
-(CH2)c-
(c表示1以上的整数,优选1以上且25以下的整数。)
通式(1)中,X表示羟基、羧基、磺基、氨基、烷氧基,或仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基。这里,当X表示仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基时,由X表示的取代基为例如下示取代基。然而,本发明不限于此。
(★表示与Rc的键合手。)
应当注意的是,当X表示烷氧基或仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基时,Rf1和X可彼此相同或不同。
本发明中,作为组分(C)的表面活性剂优选由下列式(2)或(3)表示的化合物。
(通式(2)和(3)中,n表示1以上的整数,优选1以上且25以下的整数。)
本发明的发明人已进行了深入的研究,结果已发现,使用本发明的光固化性组合物能够减小在光照射后将模具从光固化性组合物脱离时产生的脱模力。本发明的发明人已考虑了使用本发明的光固化性组合物能够减小在脱离模具时产生的脱模力的原因如下所述。
图1为说明在从模具形成步骤至脱模步骤的过程中表面活性剂的配置模式的示意性截面图。应当注意的是,图1还是说明当使用其中式(1)中的X表示羟基、羧基、磺基、氨基或烷氧基的表面活性剂时表面活性剂的配置模式的图。
如图1A所示,作为组分(C)的表面活性剂10在模具接触步骤和光照射步骤中偏析至光固化性组合物1和模具3之间的界面。此时,将作为构成表面活性剂10的骨架中的极性取代基的X配置为如图1A所示接近光固化性组合物1或模具3。同时,将仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基Rf1配置为如图1A所示与光固化性组合物1或模具3尽可能远。因此,如图1A所述,存在于光固化性组合物1和模具3之间的表面活性剂10可形成在骨架Rf1彼此相对的状态下的双分子层状结构(lamellar structure)10a。
在模具接触步骤和光照射步骤中形成的双分子层状结构10a的解体(dismount),如图1B所示,在脱模步骤中开始于其中骨架Rf1彼此相对的部位。另外,已知三氟甲基在氟烷基化合物中具有特别低的临界表面张力(非专利文献2)。本发明光固化性组合物中的表面活性剂(C)为多个三氟甲基存在于骨架Rf1(含氟原子的部位)处的表面活性剂。从前述中,推测相邻分子中的骨架Rf1之间的范德华力变得额外小,因而双分子层状结构中的界面结合力减小。
图2为说明在从模具形成步骤至脱模步骤的过程中表面活性剂的配置模式的示意性截面图。应当注意的是,图2还是说明当使用其中式(1)中的X表示仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基时的表面活性剂的配置模式的图。在其中式(1)中的X表示仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基的表面活性剂的情况中,将X和Rf1配置为如图2A所示与光固化性组合物1或模具3尽可能远。因此,如图2A所示,可形成在其中骨架Rf1(或取代基X)彼此相对的双分子层状结构10a。应当注意的是,图2A所示的双分子层状结构10a的解体,如图2B所示,在脱模步骤中开始于其中骨架Rf1或取代基X彼此相对的部位。
另外,本发明的发明人已进行了深入的研究,结果已发现,本发明的光固化性组合物显示高填充性。尽管前述的原因并不清楚,但如后述实施例中所述,本发明的光固化性组合物具有高表面张力并且与任意其它含氟类表面活性剂的光固化性组合物相比显示相对于石英模具或基板低的接触角。从前述可以说,本发明光固化性组合物的填充性与高表面张力和相对于石英模具或基板的低接触角深度相关。
下面示出用作作为组分(C)的表面活性剂的化合物的具体实例,条件是本发明不限于此。
在本发明的光固化性组合物中,可单独使用作为组分(C)的表面活性剂中的一种,或可将其两种以上作为混合物使用。
另外,优选适当调整本发明光固化性组合物中主要组分(C)的添加量。具体地,优选调整组分(C)的添加量使得通过使光固化性组合物固化获得的光固化膜的表面的水接触角可为74°以下。
如例如专利文献3中所述,迄今为止认为光固化膜的拒水性(water repellency)优选尽可能大。具体地,认为光固化膜(的表面)的水接触角的值优选高达75°至98°。
通过将由本发明光固化性组合物获得的膜(光固化膜)的水接触角设定至74°以下来实现低脱模力的原因并不清楚。本发明的发明人认为前述的原因例如如下所述。组分(C)偏析至所得膜的表面并且组分(C)中的大量Rc部位存在于膜上,从而在膜表面上表现亲水性。另外,此类Rc部位与模具的表面形成键,因此组分(C)的薄膜形成于模具和抗蚀剂之间的界面处,这降低了脱模力。
本发明的光固化性组合物中作为组分(C)的表面活性剂的配混比相对于作为组分(A)的可聚合化合物的总量为例如0.001wt%至10wt%。配混比优选为0.002wt%至5wt%,更优选0.005wt%至3wt%。当配混比小于0.001wt%时,不能充分发挥本发明的效果。当配混比超过10wt%时,由于其表面张力降低或其相对于模具或基板的接触角增大,所以光固化性组合物本身的填充性降低。
<其它添加组分>
另外,本发明的光固化性组合物可进一步包含除组分(A)至组分(C)以外的添加组分。即,除了可聚合化合物(组分(A))、聚合引发剂(组分(B))和表面活性剂(组分(C))以外,取决于各种目的,在不损害本发明的效果的程度下,添加组分如敏化剂、抗氧化剂、溶剂或聚合物组分可引入本发明的光固化性组合物中。
敏化剂为出于促进聚合反应或改进反应转化率的目的而适当添加的化合物。敏化剂的实例包括氢供体和敏化染料。
氢供体为与由作为组分(B)的聚合引发剂产生的引发自由基(initiationradical)或在聚合生长末端的自由基反应从而产生具有额外高的反应性的化合物。氢供体优选在光自由基产生剂(optical radical generator)用作聚合引发剂时添加。
氢供体的具体实例包括,但不限于,N-丁胺、二正丁胺、三正丁基膦、烯丙基硫脲、s-苄基异硫脲鎓-对甲苯次磺酸盐、三乙胺、二乙氨基乙基甲基丙烯酸酯、三亚乙基四胺、4,4'-双(二烷基氨基)二苯甲酮、N,N-二甲氨基苯甲酸乙酯、N,N-二甲氨基苯甲酸异戊酯、戊基-4-二甲氨基苯甲酸酯、三乙醇胺,胺化合物如N-苯基甘氨酸、2-巯基-N-苯基苯并咪唑,和巯基化合物如巯基丙酸酯。
敏化染料为通过吸收具有特定波长的光而被激发,从而显示与作为组分(B)的聚合引发剂相互作用的化合物。应当注意的是,本文使用的术语"相互作用"是指例如能量或电子从激发态的敏化染料向作为组分(B)的聚合引发剂的移动。
敏化染料的具体实例包括,但不限于,蒽衍生物、蒽醌衍生物、芘衍生物、苝衍生物、咔唑衍生物、二苯甲酮衍生物、噻吨酮衍生物、呫吨酮衍生物、噻吨酮衍生物、香豆素衍生物、吩噻嗪衍生物、樟脑醌衍生物、吖啶类染料、硫代吡喃鎓(thiopyrylium)盐类染料、部花青素(merocyanine)类染料、喹啉类染料、苯乙烯基喹啉类染料、香豆素酮(ketocoumarin)类染料、噻吨类染料、呫吨类染料、氧杂菁类染料、花青类染料、罗丹明类染料和吡喃鎓盐类染料。
可单独使用敏化剂中的一种,或可将其两种以上作为混合物使用。
在本发明的光固化性组合物中,敏化剂的含量相对于作为组分(A)的可聚合化合物的总量优选为0wt%至20wt%,更优选0.1wt%至5.0wt%,还更优选0.2wt%至2.0wt%。当敏化剂的含量设为至少0.1wt%以上时,敏化剂的效果可以以额外有效的形式来表现。另外,当敏化剂的含量设为5.0wt%以下时,构成要生产的光固化物(photo-cured product)的高分子化合物具有足够高的分子量,且可抑制其溶解不良及其贮存稳定性劣化。
<光固化性组合物配混时的温度>
通过混合和溶解试剂和溶剂制备光固化性组合物在预定的温度条件下进行。具体地,在0℃至100℃范围内的温度下进行制备。
<光固化性组合物的粘度>
本发明光固化性组合物的除了溶剂以外的各组分的混合物在23℃下的粘度优选为1cP至100cP,更优选5cP至50cP,还更优选6cP至20cP。在光固化性组合物的粘度高于100cP的情况下,在使光固化性组合物与模具接触时将组合物填充入模具上微细图案中的凹部(recessed portion)中可能需要很长一段时间,或者由于填充不良使得图案缺陷可能发生。另一方面,在粘度低于1cP的情况下,在涂布光固化性组合物时涂布不均匀可能发生,或者在使光固化性组合物与模具接触时光固化性组合物可流出模具的端部。
<光固化性组合物的表面张力>
本发明的光固化性组合物的除溶剂以外的各组分的混合物在23℃下的表面张力为优选5mN/m至70mN/m,更优选7mN/m至35mN/m,还更优选10mN/m至32mN/m。这里,如果表面张力小于5mN/m,则当光固化性组合物与模具接触时,组合物填充模具上微细图案中的凹部需要很长一段时间。另一方面,当表面张力大于70mN/m时,表面平滑性变低。
<光固化性组合物中混入的如颗粒等杂质>
期望从本发明的光固化性组合物中尽量去除杂质。例如,为了可防止由于由光固化性组合物中混入的颗粒引起的光固化物中凹凸图案的毫无准备的出现而发生图案缺陷,期望去除如颗粒等杂质。具体地,优选混合光固化性组合物中的各组分,然后将混合物用具有例如0.001μm至5.0μm孔径的过滤器过滤。更优选用过滤器的过滤在多阶段进行,或重复多次。另外,滤液可再次过滤。由例如聚乙烯树脂、聚丙烯树脂、氟树脂或尼龙树脂制成的过滤器可用作要在过滤中使用的过滤器。然而,过滤器不特别限定。
应当注意的是,在使用本发明光固化性组合物用于制造半导体集成电路时,在组合物中混入的金属杂质的量优选尽量减少,以不阻碍产物的操作。因此,在本发明的光固化性组合物中,可引入组合物中的金属杂质的浓度设为优选10ppm以下,更优选100ppb以下。
(膜的形成方法)
接下来,描述了本发明的膜的形成方法。图3为说明本发明膜的制造方法的实施方案的实例的示意性截面图。图3中所述的制造过程为由以下部分(1)至(5)或(6)中记载的步骤形成的制造过程:
(1)配置步骤(涂布步骤,图3A);
(2)模具接触步骤(图3B1和3B2);
(3)光照射步骤(图3C);
(4)脱模步骤(图3D);
(5)残膜(residual film)去除步骤(图3E);和
(6)基板加工步骤(图3F)。
在制造过程中,残膜去除步骤(图3E)为在脱模步骤(图3D)之后通过蚀刻去除残留在光固化性组合物的凹部的膜(残膜),从而在图案的凹部中露出作为被加工基材的基板2的表面的步骤。残膜去除步骤(图3E)期望在通过利用该制造过程生产光学元件或电子部件时来进行。
本发明中,在接触步骤中与光固化性组合物接触的模具的表面优选为石英。石英具有对如环氧乙烷、环氧丙烷或羟基等极性取代基良好的亲和性,因此,容易形成图1或图2中所示的双分子层状结构。
另外,在本发明中,光照射步骤优选为隔着模具用光照射光固化性组合物的步骤,且要使用的模具在其表面上具有凹凸图案。使用模具可形成具有对应于设置在模具表面上的凹凸图案的图案形状的膜。
通过部分(1)至(6)中所述的步骤(或部分(1)至(5)中所述的步骤),光固化物12和具有光固化物12的电子部件(电子装置)或光学部件可由光固化性组合物1获得。下文中,描述关于各步骤的细节。
<配置步骤(图3A)>
首先,将光固化性组合物1配置(涂布)在基板2上,从而形成涂布膜(图3A)。如本文所使用的术语"光固化性组合物"是指本发明的光固化性组合物。
硅晶片通常用于相当于基板2的被加工基板,但基板用材料不限于此。除了硅晶片以外,可使用任选自如铝、钛-钨合金、铝-硅合金、铝-铜-硅合金、硅氧化物,和硅氮化物等任何已知的半导体装置的基板用材料的材料。应当注意的是,作为要使用的基板(被加工基板),可使用借助如硅烷偶联处理、硅氮烷处理或有机薄膜的膜形成等表面处理来改进对光固化性组合物的粘合性的基板。
作为将本发明光固化性组合物配置在被加工基板上的方法,可使用例如喷墨法、浸涂法、气刀涂布法、帘式涂布法、绕线棒涂布法、凹版涂布法、挤出涂布法、旋涂法或狭缝扫描法。应当注意的是,要进行形状转印的层(涂布膜)的厚度根据用途而变化,且为例如0.01μm至100.0μm。
<模具接触步骤(图3B1和3B2)>
接下来,进行使模具与在前述步骤(配置步骤)中形成的由光固化性组合物1形成的涂布膜接触的步骤(模具接触步骤,图3B1,图3B2)。应当注意的是,因为模具3被认为是印章(stamp),所以该步骤也称作模具接触步骤。当在该步骤中使模具3与光固化性组合物1(要进行形状转印的层)接触时(图3B1),模具3上形成的微细图案的凹部填充有涂布膜(的一部分)11(图3B2)。
考虑到下一步骤(光照射步骤),要用于模具接触步骤中的模具3需要由光透明性材料构成。作为模具3的构成材料的具体实例,可给出玻璃,石英,如PMMA或聚碳酸酯树脂等光透明性树脂,透明金属-沉积膜,由聚二甲基硅氧烷等制成的柔软膜,光固化膜和金属膜等。应当注意的是,当光透明性树脂用作模具3的构成材料时,需要选择不溶解在光固化性组合物1中的溶剂中的树脂。另外,因为与作为在作为组分(C)的表面活性剂中的取代基的Rc或X的极性键容易形成,所以与光固化性组合物接触的模具的表面优选为亲水性的,且表面特别优选石英。
使用前要用于本发明光固化物的制造方法的模具3可进行表面处理,用于改进光固化性组合物1与模具3的表面之间的脱离性。表面处理的方法为例如,涉及在进行模具接触步骤之前将脱模剂(mold release agent)涂布至模具表面以形成脱模剂层的方法。这里,要涂布于模具表面的脱模剂的实例包括硅酮类脱模剂、氟类脱模剂、聚乙烯类脱模剂、聚丙烯类脱模剂、石蜡类脱模剂、褐煤蜡(montan)类脱模剂和巴西棕榈蜡类脱模剂。例如,可适当使用商购可得的涂布型脱模剂如由Daikin Industries,Ltd.制造的OPTOOL DSX。应当注意的是,可单独使用那些脱模剂中的一种,或可组合使用其两种以上。这些中,特别优选氟类脱模剂。
在模具接触步骤中,如图3B1所示,在使模具3与光固化性组合物1接触时,尽管要施加于光固化性组合物1的压力不特别限定,但该压力通常为0.1MPa至100MPa。此范围中,优选0.1MPa至50MPa的压力,更优选0.1MPa至30MPa的压力,还更优选0.1MPa至20MPa的压力。另外,接触步骤中模具3与要进行形状转印的层1接触的时间,尽管不特别限定,但该时间通常为1秒至600秒,优选1秒至300秒,更优选1秒至180秒,特别优选1秒至120秒。
另外,模具接触步骤可在下列条件中的任一种下进行:在大气气氛下、在减压气氛下和在惰性气体气氛下。优选减压气氛或惰性气体气氛,因为可防止氧或水分对光固化反应的影响。当模具接触步骤在惰性气体气氛下进行时,要使用的惰性气体的具体实例包括氮气、二氧化碳、氦气、氩气、各种氯氟烃(chlorofluorocarbon)气体,及其混合气体。当该步骤(接触步骤)在包括大气气氛的特定气体气氛下进行时,优选的压力为0.0001大气压至10大气压。应当注意的是,优选减压气氛或惰性气体气氛,因为可防止氧或水分对光固化反应的影响。
<光照射步骤(图3C)>
接下来,涂布膜11隔着模具3用光照射(图3C)。在该步骤中,涂布膜11用施加的光固化,从而形成光固化物12。
这里,照射构成涂布膜11的光固化性组合物1所利用的光根据光固化性组合物1的感光度波长来选择。具体地,优选适当选择并使用具有约150nm至400nm的波长的紫外光、X-射线或电子束等。这里,许多商购可得的作为固化助剂(光聚合引发剂)的化合物对紫外光具有感光度。因此,照射光固化性组合物1所利用的光(照射光4)特别优选紫外光。这里,紫外光的光源的实例包括高压汞灯、超高压汞灯、低压汞灯、深-UV灯、碳弧灯、化学灯、金属卤化物灯、氙灯、KrF准分子激光器、ArF准分子激光器和F2准分子激光器。这些中,特别优选超高压汞灯。要使用的光源的数量可为一个以上。另外,当光固化性组合物1用光照射时,其整个表面可用光照射,或其部分表面可用光照射。
另外,当要进行形状转印的层也用热来固化时,可进一步进行加热固化。当进行热固化时,加热氛围和加热温度等不特别限定。例如,在惰性气氛下或在减压下,光固化性组合物1可在40℃至200℃的范围内的温度下加热。另外,热板、烤箱或炉等可在加热要进行形状转印的层1时使用。
<脱模步骤(图3D)>
接下来,进行将模具3从光固化物12脱离以在基板2上形成具有预定图案形状的固化膜的步骤(脱模步骤,图3D)。该步骤(脱模步骤)为从光固化物12脱离模具3的步骤,并且获得在之前的步骤(光照射步骤)中形成于模具3上的微细图案的反转图案作为光固化物12的图案。
将模具3从光固化物12脱离的方法不特别限定,只要在脱离时部分光固化物12不物理破损即可,并且用于脱离的各种条件等不特别限定。例如,可如下所述脱离模具3。将被加工基板(基板2)固定并移动模具3,以使模具可远离被加工基板。可选地,可如下所述脱离模具3。将模具固定并移动被加工基板,以使基板可远离模具。可选地,模具可通过以彼此正相反的方向牵拉基板和模具二者来脱离。
<残膜去除步骤(图3E)>
尽管当进行脱模步骤时要获得的固化膜具有特定的图案形状,但部分膜可以作为残膜甚至存在于除了形成图案形状的区域以外的区域内。鉴于上述,进行去除残留在应去除图案形状中的光固化物的区域中的光固化膜(残膜)的步骤(残膜去除步骤,图3E)。
这里,去除残膜的方法为,例如涉及通过蚀刻去除残留在光固化物12凹部的膜(残膜)以露出图案的凹部中基板2的表面的方法。
当利用蚀刻时,用于其的具体方法不特别限定,且期望的图案形状可通过常规已知方法,例如通过进行干法蚀刻来形成。常规已知的干法蚀刻设备可用于干法蚀刻。另外,干法蚀刻时的原料气体根据要蚀刻的膜的元素组成而适当选择。例如,可使用如O2、CO或CO2等包含氧原子的气体,如He、N2或Ar等惰性气体,如Cl2或BCl3等氯类气体,或气体H2或NH3。应当注意的是,这些气体可作为混合物使用。
具有期望凹凸图案形状(归因于模具3的凹凸形状的图案形状)的光固化物12可通过包括步骤(1)至(5)的制造过程来获得。这里,当基板2通过利用光固化物12来加工时,在某些情况下进一步进行后述的加工基板的步骤。
同时,所得光固化物12可用作光学构件(包括其中产物用作光学构件的一个构件的情况)。在此类情况中,光固化物12可作为具有至少基板2和配置在基板2上的光固化物12的光学构件来提供。
<基板加工步骤(图3F)>
通过本发明制造方法获得的具有期望凹凸图案形状的光固化物12可用作例如电子部件中的层间绝缘膜用膜,所述电子部件以如LSI、系统LSI、DRAM、SDRAM、RDRAM或D-RDRAM等半导体元件为代表。同时,光固化物12也可用作在制造半导体元件时的抗蚀膜。
当光固化物12用作抗蚀膜时,具体地,如图3F所示已通过蚀刻步骤露出其表面的基板的一部分(由附图标记20表示的区域)进行例如蚀刻或离子注入。应当注意的是,此时,光固化物12起到掩膜的作用。因此,基于光固化物12的图案形状的电路结构(未示出)可形成于基板2上。因此,可制造要用于半导体元件等中的具有电路的基板。应当注意的是,电子部件通过对具有电路的基板设置电子构件来形成。
应当注意的是,当生产具有电路的基板或电子部件时,光固化物的图案可最终从经加工的基板上去除,但图案作为部件的构成元素而残留的这类构造也是优选的。
实施例
下文中,借助实施例更详细地描述本发明,但本发明的技术范围不限于下述实施例。
(实施例1)
(1)光固化性组合物
首先,配混下列组分(A)、组分(B)和组分(C),从而提供混合溶液。
(1-1)组分(A):总计100重量份
<A-1>异冰片基丙烯酸酯(由KYOEISHA CHEMICAL Co.,LTD.制造,商品名:IB-XA):61.6重量份
<A-2>(2-甲基-2-乙基-1,3-二噁烷-4-基)甲基丙烯酸酯(由OSAKA ORGANICCHEMICAL INDUSTRY LTD.制造,商品名:MEDOL-10):10重量份
<A-3>己二醇二丙烯酸酯(由OSAKA ORGANIC CHEMICAL INDUSTRY LTD.制造,商品名:Viscoat#230):22.4重量份
(1-2)组分(B):总计5重量份
<B-1>Irgacure 907(由Ciba Japan制造):1重量份
<B-2>Darocur TPO(由Ciba Japan制造):2重量份
<B-3>Darocur 1173(由Ciba Japan制造):2重量份
(1-3)组分(C):2重量份
由下式(C-1)表示的表面活性剂FTERGENT 251(由Neos制造):2重量份
接下来,所得混合溶液用由网目为5nm的超高分子量聚乙烯制成的过滤器过滤。由此,制备本实施例(实施例1)的光固化性组合物(a-1)。
(1-4)抗蚀剂(光固化性组合物)的表面张力的测量
用自动表面张力计CBVP-A3(由Kyowa Interface Science Co.,Ltd.制造)测量的光固化性组合物(a-1)的表面张力为30.4mN/m。该值高于后述的比较例2中制备的光固化性组合物(b-2)的值。
(1-5)抗蚀剂(光固化性组合物)的接触角的测量
用全自动接触角量角计CA-W(由Kyowa Interface Science Co.,Ltd.制造)测量通过将1μL光固化性组合物(a-1)滴在石英基板上得到的液滴的接触角。结果,接触角为10.8°。该值低于后述的比较例2中制备的光固化性组合物(b-2)的值。
接下来,通过下列方法生产光固化物。
(2)配置步骤
将总计1,440滴光固化性组合物(a-1)的液滴(每一个液滴为11pL)通过喷墨法滴在具有形成于其上的厚度为3nm的粘合促进层作为粘合层的300-mm硅晶片上。应当注意的是,在滴下各液滴时,将各液滴滴在具有26mm的纵向长度和33mm的横向长度的区域中,从而以基本上相等的间隔排列。
(3)模具接触步骤和光照射步骤
接下来,使还未进行任何表面处理并且其上未形成图案的石英模具(具有26mm的纵向长度和33mm的横向长度)与上述硅晶片从上方接触。
接下来,石英模具已接触30秒后,通过使用超高压力汞灯隔着石英模具用UV光照射光固化性组合物。应当注意的是,在用UV光照射时将具有313±5nm的波长的光能够选择性地透过的干涉滤光片配置在UV光源和石英模具之间。另外,在石英模具正下方的UV光的照明强度(illumination intensity)在313nm波长下为38.5mW/cm2。用UV光的照射在前述条件下进行5秒。
(4)脱模步骤
接下来,石英模具在0.5mm/s的条件下提起。由此,将模具从光固化物脱离。
通过前述步骤获得光固化物。
(5)光固化物的评价
接下来,通过进行下述测量来评价所得光固化物的物理性质。
(5-1)脱模力测量
利用负载传感器(load cell)测量模具脱离所需的力。当实际进行测量时,脱模力测量在相同条件下进行三次,然后由各次测量中的数据计算平均值。作为测量的结果,平均脱模力为48.0N,其为低于由后述的比较例1中的光固化性组合物(b-1)生产的光固化物的值。
(实施例2)
除了在实施例1中使用2.0重量份的由下式(C-2)表示的表面活性剂FTERGENT 250(由Neos制造)代替由式(C-1)表示的表面活性剂作为组分(C)以外,光固化性组合物(a-2)通过与实施例1相同的方法来制备。
(抗蚀剂(光固化性组合物)的表面张力的测量)
通过与实施例1相同的方法测量的光固化性组合物(a-2)的表面张力为31.1mN/m。该值高于后述的比较例2中制备的光固化性组合物(b-2)的值。
(抗蚀剂(光固化性组合物)的接触角的测量)
通过与实施例1相同的方法测量的光固化性组合物(a-2)相对于石英基板上的接触角为12.8°。该值低于后述的比较例2中制备的光固化性组合物(b-2)的值。
(光固化膜的水接触角的评价)
将光固化性组合物(a-2)通过旋涂法涂布至硅晶片上,从而形成具有约1μm厚度的膜。接下来,将光固化性组合物(a-2)的膜在氮气气氛下用光照射,从而提供光固化膜。应当注意的是,将设置有250-W超高压汞灯的UV光源EX250(由HOYA CANDEO OPTRONICSCORPORATION制造)用作光源。另外,在用光照射时,在365nm波长下通过光源和膜之间的干涉滤光片(VPF-50C-10-25-36500,由SIGMA KOKI CO.,LTD.制造)将膜上的照明强度调整为25mW/cm2,并且将光照时间设定为100秒。接下来,用全自动接触角量角计(CA-W,由KyowaInterface Science Co.,Ltd.制造)测量当将1μl纯水滴在通过使光固化性组合物(a-2)固化获得的膜上时的水接触角。作为测量结果,水接触角为26.2°。
(光固化物的生产)
除了在实施例1中使用光固化性组合物(a-2)代替光固化性组合物(a-1)以外,通过与实施例1相同的方法获得光固化物。
(脱模力测量)
通过与实施例1相同的方法测量由光固化性组合物(a-2)获得的光固化物的平均脱模力。结果,平均脱模力为46.8N。该值低于后述比较例1中由光固化性组合物(b-1)生产的光固化物的值。
(实施例3)
除了在实施例1中将组分(B)改为仅3重量份Irgacure 651(由Ciba Japan制造)以外,通过与实施例1相同的方法获得光固化性组合物(a-3)。
(抗蚀剂(光固化性组合物)的表面张力的测量)
通过与实施例1相同的方法测量的光固化性组合物(a-3)的表面张力为31.1mN/m。该值高于后述比较例3中制备的光固化性组合物(b-3)的值。
(抗蚀剂(光固化性组合物)的接触角的测量)
通过与实施例1相同的方法测量的光固化性组合物(a-3)相对于石英基板上的接触角为8.6°。该值低于后述比较例3中制备的光固化性组合物(b-3)的值。
(通过旋涂的光固化膜的生产和相对于光固化膜的水接触角的测量)
以与实施例2相同的方式生产光固化性组合物(a-3)的光固化膜,然后测量其水接触角。结果,水接触角为6.2°。
(光固化物的生产)
除了在实施例1中使用光固化性组合物(a-3)代替光固化性组合物(a-1)以外,通过与实施例1相同的方法获得光固化物。
(脱模力测量)
通过与实施例1相同的方法测量由光固化性组合物(a-3)获得的光固化物的平均脱模力。结果,平均脱模力为45.7N。该值低于后述比较例4中由光固化性组合物(b-4)生产的光固化物的值。
(实施例4)
除了在实施例3中将由下式(C-3)表示的表面活性剂FTERGENT 222F(由Neos制造)用作组分(C)以外,通过与实施例3相同的方法制备光固化性组合物(a-4)。
(抗蚀剂(光固化性组合物)的表面张力的测量)
通过与实施例1相同的方法测量的光固化性组合物(a-4)的表面张力为28.2mN/m。该值高于后述比较例3中制备的光固化性组合物(b-3)的值。
(抗蚀剂(光固化性组合物)的接触角的测量)
通过与实施例1相同的方法测量的光固化性组合物(a-3)相对于石英基板上的接触角为22.8°。
(光固化物的生产)
除了在实施例1中使用光固化性组合物(a-4)代替光固化性组合物(a-1)以外,通过与实施例1相同的方法获得光固化物。
(脱模力测量)
通过与实施例1相同的方法测量由光固化性组合物(a-4)获得的光固化物的平均脱模力。结果,平均脱模力为46.1N。该值低于后述比较例4中由光固化性组合物(b-4)生产的光固化物的值。
(实施例5)
除了在实施例3中将组分(C)改为仅1重量份由式(C-2)表示的化合物以外,通过与实施例3相同的方法制备光固化性组合物(a-5)。
(抗蚀剂(光固化性组合物)的表面张力的测量)
通过与实施例1相同的方法测量的光固化性组合物(a-5)的表面张力为30.8mN/m。该值高于后述比较例3中制备的光固化性组合物(b-3)的值。
(抗蚀剂(光固化性组合物)的接触角的测量)
通过与实施例1相同的方法测量的光固化性组合物(a-5)相对于石英基板上的接触角为5.3°。该值低于后述比较例3中制备的光固化性组合物(b-3)的值。
(光固化物的生产)
除了在实施例1中使用光固化性组合物(a-5)代替光固化性组合物(a-1)以外,通过与实施例1相同的方法获得光固化物。
(脱模力测量)
通过与实施例1相同的方法测量由光固化性组合物(a-5)获得的光固化物的平均脱模力。结果,平均脱模力为46.3N。该值低于后述比较例4中由光固化性组合物(b-4)生产的光固化物的值。
(比较例1)
除了在实施例1中不添加组分(C)(表面活性剂)以外,通过与实施例1相同的方法制备光固化性组合物(b-1)。
(抗蚀剂(光固化性组合物)的表面张力的测量)
通过与实施例1相同的方法测量的光固化性组合物(b-1)的表面张力为30.7mN/m。
(抗蚀剂(光固化性组合物)的接触角的测量)
通过与实施例1相同的方法测量的光固化性组合物(b-1)相对于石英基板上的接触角为3.6°。
(光固化物的生产)
除了在实施例1中使用光固化性组合物(b-1)代替光固化性组合物(a-1)以外,通过与实施例1相同的方法获得光固化物。
(脱模力测量)
通过与实施例1相同的方法测量由光固化性组合物(b-1)获得的光固化物的平均脱模力。结果,平均脱模力为49.8N。
(比较例2)
在实施例1中,添加1.1重量份的下示十五甘醇单(1H,1H,2H,2H-全氟辛基)醚(由DIC Corporation制造)来代替作为组分(C)(表面活性剂)的由式(C-1)表示的化合物。
F(CF2)6CH2CH2(OCH2CH2)15OH
除了前述以外,通过与实施例1相同的方法制备光固化性组合物(b-2)。
(抗蚀剂(光固化性组合物)的表面张力的测量)
通过与实施例1相同的方法测量的光固化性组合物(b-2)的表面张力为24.0mN/m。
(抗蚀剂(光固化性组合物)的接触角的测量)
通过与实施例1相同的方法测量的光固化性组合物(b-2)相对于石英基板上的接触角为20.3°。
(光固化物的生产)
除了在实施例1中使用光固化性组合物(b-2)代替光固化性组合物(a-1)以外,通过与实施例1相同的方法获得光固化物。
(脱模力测量)
通过与实施例1相同的方法测量由光固化性组合物(b-2)获得的光固化物的平均脱模力。结果,平均脱模力为46.9N。
(比较例3)
在实施例3中,添加1.1重量份的下示十五甘醇单(1H,1H,2H,2H-全氟辛基)醚(由DIC Corporation制造)代替作为组分(C)(表面活性剂)的由式(C-1)表示的化合物。
F(CF2)6CH2CH2(OCH2CH2)15OH
除了前述以外,通过与实施例1相同的方法制备光固化性组合物(b-3)。
(抗蚀剂(光固化性组合物)的表面张力的测量)
通过与实施例1相同的方法测量的光固化性组合物(b-3)的表面张力为26.1mN/m。
(抗蚀剂(光固化性组合物)的接触角的测量)
通过与实施例1相同的方法测量的光固化性组合物(b-3)相对于石英基板上的接触角为17.9°。
(光固化物的生产)
除了在实施例1中使用光固化性组合物(b-3)代替光固化性组合物(a-1)以外,通过与实施例1相同的方法获得光固化物。
(脱模力测量)
通过与实施例1相同的方法测量由光固化性组合物(b-3)获得的光固化物的平均脱模力。结果,平均脱模力为45.4N。
(比较例4)
除了在实施例3中不添加组分(C)(表面活性剂)以外,通过与实施例3相同的方法制备光固化性组合物(b-4)。
(抗蚀剂(光固化性组合物)的表面张力的测量)
通过与实施例1相同的方法测量的光固化性组合物(b-4)的表面张力为28.1mN/m。
(抗蚀剂(光固化性组合物)的接触角的测量)
通过与实施例1相同的方法测量的光固化性组合物(b-4)相对于石英基板上的接触角为3.6°。
(通过旋涂法的光固化膜的生产和相对于光固化膜的水接触角的测量)
以与实施例2相同的方式生产光固化性组合物(b-4)的光固化膜,然后测量其水接触角。结果,水接触角为93.5°。
(光固化物的生产)
除了在实施例1中使用光固化性组合物(b-4)代替光固化性组合物(a-1)以外,通过与实施例1相同的方法获得光固化物。
(脱模力测量)
通过与实施例1相同的方法测量由光固化性组合物(b-4)获得的光固化物的平均脱模力。结果,平均脱模力为48.3N。
虽然参考示例性实施方案对本发明进行了描述,但应当理解的是,本发明并不限于公开的示例性实施方案。权利要求的范围符合最宽解释以便包含所有此类改进以及等同的结构和功能。
本申请要求2012年9月19日提交的日本专利申请No.2012-205551和2013年2月18日提交的日本专利申请No.2013-028701的权益,将其全部内容引入于此以作参考。
Claims (11)
1.一种光压印用固化性组合物,其包括至少下列组分A至组分C:
A可聚合化合物,所述可聚合化合物包含(甲基)丙烯酸酯单体;
B光聚合引发剂;和
C由下列通式(1)表示的表面活性剂:
Rf1-Rc-X (1)
通式(1)中,Rf1表示仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基,Rc表示聚环氧乙烷基团、聚环氧丙烷基团或亚烷基,和X表示羟基、羧基、磺基、氨基、烷氧基,或仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基,条件是当X表示烷氧基或仅由氟原子和碳原子组成并具有两个以上的三氟甲基的取代基时,Rf1和X可彼此相同或不同,
其中所述固化性组合物具有28.2mN/m以上且35mN/m以下的在23℃下的表面张力,具有1cP以上且20cP以下的在23℃下的粘度,且所述固化性组合物实质上不含溶剂。
3.根据权利要求1或2所述的光压印用固化性组合物,其中所述聚合引发剂B包括2,2-二甲氧基-2-苯基苯乙酮。
4.根据权利要求1所述的光压印用固化性组合物,其中所述可聚合化合物包括(2-甲基-2-乙基-1,3-二噁烷-4-基)甲基丙烯酸酯,以及异冰片基丙烯酸酯和己二醇二丙烯酸酯中的至少一种。
5.根据权利要求1所述的光压印用固化性组合物,其要作为液滴配置在基板上。
6.一种膜,其特征在于,其由根据权利要求1至5任一项所述的光压印用固化性组合物制造,其中表面的水接触角为74°以下。
7.一种膜的制造方法,其特征在于,其包括:
将根据权利要求1至5任一项所述的光压印用固化性组合物以通过喷墨法配置所述固化性组合物的液滴的方式配置在基板上的配置步骤;
使所述光压印用固化性组合物与模具彼此相接触的模具接触步骤;
用光照射所述光压印用固化性组合物的光照射步骤;和
在所述光照射步骤之后将所述光压印用固化性组合物与所述模具彼此脱离的脱模步骤,
其中在所述基板上获得具有预定图案形状的膜。
8.根据权利要求7所述的膜的制造方法,其中与所述光压印用固化性组合物接触的所述模具的表面包括石英。
9.根据权利要求7所述的膜的制造方法,其中:
所述光照射步骤包括隔着所述模具用光照射所述光压印用固化性组合物的步骤;和
所述模具在其表面上具有凹凸图案。
10.一种具有电路的基板的制造方法,其特征在于,其包括基于通过根据权利要求7至9任一项所述的膜的制造方法获得的膜的图案形状进行蚀刻和离子注入之一,从而基于所述图案形状在所述基板上形成电路结构。
11.一种光学构件,其包括:
基板;和
配置于所述基板上的膜,
其特征在于,所述膜包括通过根据权利要求7至9任一项所述的膜的制造方法制造的膜。
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