CN104576385A - 一种FinFET结构及其制造方法 - Google Patents
一种FinFET结构及其制造方法 Download PDFInfo
- Publication number
- CN104576385A CN104576385A CN201310478725.7A CN201310478725A CN104576385A CN 104576385 A CN104576385 A CN 104576385A CN 201310478725 A CN201310478725 A CN 201310478725A CN 104576385 A CN104576385 A CN 104576385A
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- fin
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66818—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310478725.7A CN104576385A (zh) | 2013-10-14 | 2013-10-14 | 一种FinFET结构及其制造方法 |
| PCT/CN2013/085533 WO2015054913A1 (fr) | 2013-10-14 | 2013-10-21 | Structure de fet à ailette et son procédé de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310478725.7A CN104576385A (zh) | 2013-10-14 | 2013-10-14 | 一种FinFET结构及其制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104576385A true CN104576385A (zh) | 2015-04-29 |
Family
ID=52827602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310478725.7A Pending CN104576385A (zh) | 2013-10-14 | 2013-10-14 | 一种FinFET结构及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104576385A (fr) |
| WO (1) | WO2015054913A1 (fr) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470769A (zh) * | 2018-03-14 | 2018-08-31 | 上海华力集成电路制造有限公司 | 鳍式晶体管及其制造方法 |
| CN108470766A (zh) * | 2018-03-14 | 2018-08-31 | 上海华力集成电路制造有限公司 | 全包覆栅极晶体管及其制造方法 |
| CN109698198A (zh) * | 2017-10-23 | 2019-04-30 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法 |
| CN112864251A (zh) * | 2021-02-04 | 2021-05-28 | 上海华力集成电路制造有限公司 | 鳍式晶体管及其制造方法 |
| WO2022016463A1 (fr) * | 2020-07-23 | 2022-01-27 | 华为技术有限公司 | Transistor à effet de champ à ailette et procédé de préparation |
| CN114068396A (zh) * | 2020-07-31 | 2022-02-18 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| WO2023035508A1 (fr) * | 2021-09-07 | 2023-03-16 | 上海集成电路装备材料产业创新中心有限公司 | Dispositif à semi-conducteurs de type à ailette et son procédé de préparation |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9953881B2 (en) | 2015-07-20 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a FinFET device |
| KR102524806B1 (ko) * | 2016-08-11 | 2023-04-25 | 삼성전자주식회사 | 콘택 구조체를 포함하는 반도체 소자 |
| CN112635481B (zh) * | 2020-12-22 | 2024-07-02 | 长江存储科技有限责任公司 | 三维nand存储器及其制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050208715A1 (en) * | 2004-03-17 | 2005-09-22 | Hyeoung-Won Seo | Method of fabricating fin field effect transistor using isotropic etching technique |
| CN1771589A (zh) * | 2003-04-03 | 2006-05-10 | 先进微装置公司 | 形成FinFET装置中的栅极以及薄化该FinFET装置的沟道区中的鳍的方法 |
| US20100044784A1 (en) * | 2004-02-24 | 2010-02-25 | Samsung Electronics Co., Ltd. | Vertical Channel Fin Field-Effect Transistors Having Increased Source/Drain Contact Area and Methods for Fabricating the Same |
| CN103165447A (zh) * | 2011-12-08 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其制作方法 |
| WO2013095550A1 (fr) * | 2011-12-22 | 2013-06-27 | Intel Corporation | Dispositif à semi-conducteurs ayant un corps semi-conducteur à étranglement et procédé de formation de corps semi-conducteurs de largeur variable |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7319252B2 (en) * | 2004-06-28 | 2008-01-15 | Intel Corporation | Methods for forming semiconductor wires and resulting devices |
| CN101853882B (zh) * | 2009-04-01 | 2016-03-23 | 台湾积体电路制造股份有限公司 | 具有改进的开关电流比的高迁移率多面栅晶体管 |
-
2013
- 2013-10-14 CN CN201310478725.7A patent/CN104576385A/zh active Pending
- 2013-10-21 WO PCT/CN2013/085533 patent/WO2015054913A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1771589A (zh) * | 2003-04-03 | 2006-05-10 | 先进微装置公司 | 形成FinFET装置中的栅极以及薄化该FinFET装置的沟道区中的鳍的方法 |
| US20100044784A1 (en) * | 2004-02-24 | 2010-02-25 | Samsung Electronics Co., Ltd. | Vertical Channel Fin Field-Effect Transistors Having Increased Source/Drain Contact Area and Methods for Fabricating the Same |
| US20050208715A1 (en) * | 2004-03-17 | 2005-09-22 | Hyeoung-Won Seo | Method of fabricating fin field effect transistor using isotropic etching technique |
| CN103165447A (zh) * | 2011-12-08 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其制作方法 |
| WO2013095550A1 (fr) * | 2011-12-22 | 2013-06-27 | Intel Corporation | Dispositif à semi-conducteurs ayant un corps semi-conducteur à étranglement et procédé de formation de corps semi-conducteurs de largeur variable |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698198A (zh) * | 2017-10-23 | 2019-04-30 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法 |
| CN108470769A (zh) * | 2018-03-14 | 2018-08-31 | 上海华力集成电路制造有限公司 | 鳍式晶体管及其制造方法 |
| CN108470766A (zh) * | 2018-03-14 | 2018-08-31 | 上海华力集成电路制造有限公司 | 全包覆栅极晶体管及其制造方法 |
| WO2022016463A1 (fr) * | 2020-07-23 | 2022-01-27 | 华为技术有限公司 | Transistor à effet de champ à ailette et procédé de préparation |
| CN114068396A (zh) * | 2020-07-31 | 2022-02-18 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| CN114068396B (zh) * | 2020-07-31 | 2024-03-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| CN112864251A (zh) * | 2021-02-04 | 2021-05-28 | 上海华力集成电路制造有限公司 | 鳍式晶体管及其制造方法 |
| WO2023035508A1 (fr) * | 2021-09-07 | 2023-03-16 | 上海集成电路装备材料产业创新中心有限公司 | Dispositif à semi-conducteurs de type à ailette et son procédé de préparation |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015054913A1 (fr) | 2015-04-23 |
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