WO2015054913A1 - Structure de fet à ailette et son procédé de fabrication - Google Patents
Structure de fet à ailette et son procédé de fabrication Download PDFInfo
- Publication number
- WO2015054913A1 WO2015054913A1 PCT/CN2013/085533 CN2013085533W WO2015054913A1 WO 2015054913 A1 WO2015054913 A1 WO 2015054913A1 CN 2013085533 W CN2013085533 W CN 2013085533W WO 2015054913 A1 WO2015054913 A1 WO 2015054913A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- channel
- gate stack
- fin
- width
- source
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000011229 interlayer Substances 0.000 claims abstract description 14
- 238000002955 isolation Methods 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 7
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 241000849798 Nita Species 0.000 description 1
- 235000003976 Ruta Nutrition 0.000 description 1
- 240000005746 Ruta graveolens Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- HWJHZLJIIWOTGZ-UHFFFAOYSA-N n-(hydroxymethyl)acetamide Chemical compound CC(=O)NCO HWJHZLJIIWOTGZ-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000005806 ruta Nutrition 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66818—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Definitions
- the present invention provides a FinFET structure including:
- the etch stop layer 106 is removed.
- the etch stop layer 106 can be removed by wet etching and/or dry etching.
- the wet etching process includes the use of a hydrogen-oxygen containing solution such as ammonium hydroxide, deionized water, or other suitable etchant solution; the dry etching process includes, for example, plasma etching or the like.
- the semiconductor structure after the etch stop layer 106 is removed is as shown in FIG. 8.
- FIGS. 9 and 10 respectively schematically show the semiconductor structure along the corresponding FIG. A cross-sectional view perpendicular to the channel and a top view of the semiconductor structure. It can be seen that after thinning, the thickness of the channel portion is significantly smaller than the initial thickness.
- a village bottom 101 is provided; a fin 102 is formed on the bottom of the village, the width of the fin 102 is larger than the expected channel width; Etching stop layer 106; performing shallow trench isolation; forming a dummy gate stack over the trench to form source and drain regions; depositing an interlayer dielectric layer to planarize, exposing the dummy gate stack; removing the dummy gate stack Exposing the channel portion; thinning the channel along the sides of the channel perpendicular to the channel side surface until the desired width is obtained; removing the etch stop layer 106; sequentially depositing the gate dielectric material, the work function adjusting material And gate metal material.
- a FinFET device having a thick source/drain region and a thin channel region can be obtained without epitaxial growth of the source and drain regions, compared with the prior art. Compared, the device performance is effectively improved, and the shape and structure of the source and drain regions are standardized, which facilitates the process of the later ILD and the process complexity.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
L'invention porte sur un FET à ailette et un procédé de fabrication de ce dernier. Le procédé comprend : la fourniture d'un substrat (101) ; la formation d'une ailette (102) sur le substrat (101), la largeur de l'ailette (102) étant supérieure à une largeur prédéterminée d'un canal ; la réalisation d'une isolation de tranchée peu profonde ; la formation d'une pile de pseudo-grille (200) au-dessus du canal, et la formation d'une région de source/drain ; le dépôt d'une couche de diélectrique intercouche (105), la réalisation d'une planarisation, et la présentation de la pile de pseudo-grille (200) ; le retrait de la pile de pseudo-grille (200) pour présenter une partie de canal ; la formation d'une couche d'arrêt de gravure (106) sur le dessus du canal ; l'amincissement du canal le long de deux côtés du canal dans une direction perpendiculaire à une surface sur un côté du canal jusqu'à une épaisseur souhaitée ; et le retrait de la couche d'arrêt de gravure (106). Le procédé inhibe efficacement un effet de canal court d'un dispositif, réduit une capacité parasite de source/drain du dispositif, améliore les performances du dispositif et réduit la complexité de traitement.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310478725.7 | 2013-10-14 | ||
| CN201310478725.7A CN104576385A (zh) | 2013-10-14 | 2013-10-14 | 一种FinFET结构及其制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015054913A1 true WO2015054913A1 (fr) | 2015-04-23 |
Family
ID=52827602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2013/085533 WO2015054913A1 (fr) | 2013-10-14 | 2013-10-21 | Structure de fet à ailette et son procédé de fabrication |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104576385A (fr) |
| WO (1) | WO2015054913A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180018947A (ko) * | 2016-08-11 | 2018-02-22 | 삼성전자주식회사 | 콘택 구조체를 포함하는 반도체 소자 |
| US9953881B2 (en) | 2015-07-20 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a FinFET device |
| CN112635481A (zh) * | 2020-12-22 | 2021-04-09 | 长江存储科技有限责任公司 | 三维nand存储器及其制备方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698198A (zh) * | 2017-10-23 | 2019-04-30 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法 |
| CN108470769A (zh) * | 2018-03-14 | 2018-08-31 | 上海华力集成电路制造有限公司 | 鳍式晶体管及其制造方法 |
| CN108470766A (zh) * | 2018-03-14 | 2018-08-31 | 上海华力集成电路制造有限公司 | 全包覆栅极晶体管及其制造方法 |
| WO2022016463A1 (fr) * | 2020-07-23 | 2022-01-27 | 华为技术有限公司 | Transistor à effet de champ à ailette et procédé de préparation |
| CN114068396B (zh) * | 2020-07-31 | 2024-03-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| CN112864251A (zh) * | 2021-02-04 | 2021-05-28 | 上海华力集成电路制造有限公司 | 鳍式晶体管及其制造方法 |
| WO2023035508A1 (fr) * | 2021-09-07 | 2023-03-16 | 上海集成电路装备材料产业创新中心有限公司 | Dispositif à semi-conducteurs de type à ailette et son procédé de préparation |
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|---|---|---|---|---|
| US20050208715A1 (en) * | 2004-03-17 | 2005-09-22 | Hyeoung-Won Seo | Method of fabricating fin field effect transistor using isotropic etching technique |
| CN1771589A (zh) * | 2003-04-03 | 2006-05-10 | 先进微装置公司 | 形成FinFET装置中的栅极以及薄化该FinFET装置的沟道区中的鳍的方法 |
| CN1961413A (zh) * | 2004-06-28 | 2007-05-09 | 英特尔公司 | 形成半导体布线和最终器件的方法 |
| US20100044784A1 (en) * | 2004-02-24 | 2010-02-25 | Samsung Electronics Co., Ltd. | Vertical Channel Fin Field-Effect Transistors Having Increased Source/Drain Contact Area and Methods for Fabricating the Same |
| CN101853882A (zh) * | 2009-04-01 | 2010-10-06 | 台湾积体电路制造股份有限公司 | 具有改进的开关电流比的高迁移率多面栅晶体管 |
| CN103165447A (zh) * | 2011-12-08 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其制作方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039281B (zh) * | 2011-12-22 | 2021-06-18 | 英特尔公司 | 具有颈状半导体主体的半导体器件以及形成不同宽度的半导体主体的方法 |
-
2013
- 2013-10-14 CN CN201310478725.7A patent/CN104576385A/zh active Pending
- 2013-10-21 WO PCT/CN2013/085533 patent/WO2015054913A1/fr active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1771589A (zh) * | 2003-04-03 | 2006-05-10 | 先进微装置公司 | 形成FinFET装置中的栅极以及薄化该FinFET装置的沟道区中的鳍的方法 |
| US20100044784A1 (en) * | 2004-02-24 | 2010-02-25 | Samsung Electronics Co., Ltd. | Vertical Channel Fin Field-Effect Transistors Having Increased Source/Drain Contact Area and Methods for Fabricating the Same |
| US20050208715A1 (en) * | 2004-03-17 | 2005-09-22 | Hyeoung-Won Seo | Method of fabricating fin field effect transistor using isotropic etching technique |
| CN1961413A (zh) * | 2004-06-28 | 2007-05-09 | 英特尔公司 | 形成半导体布线和最终器件的方法 |
| CN101853882A (zh) * | 2009-04-01 | 2010-10-06 | 台湾积体电路制造股份有限公司 | 具有改进的开关电流比的高迁移率多面栅晶体管 |
| CN103165447A (zh) * | 2011-12-08 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其制作方法 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9953881B2 (en) | 2015-07-20 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a FinFET device |
| US10522416B2 (en) | 2015-07-20 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET device having oxide region between vertical fin structures |
| US11410887B2 (en) | 2015-07-20 | 2022-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET device having oxide region between vertical fin structures |
| US11894275B2 (en) | 2015-07-20 | 2024-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET device having oxide region between vertical fin structures |
| KR20180018947A (ko) * | 2016-08-11 | 2018-02-22 | 삼성전자주식회사 | 콘택 구조체를 포함하는 반도체 소자 |
| KR102524806B1 (ko) | 2016-08-11 | 2023-04-25 | 삼성전자주식회사 | 콘택 구조체를 포함하는 반도체 소자 |
| US11798850B2 (en) | 2016-08-11 | 2023-10-24 | Samsung Electronics Co., Ltd. | Semiconductor device including contact structure |
| CN112635481A (zh) * | 2020-12-22 | 2021-04-09 | 长江存储科技有限责任公司 | 三维nand存储器及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576385A (zh) | 2015-04-29 |
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