WO2015054925A1 - Structure finfet et son procédé de fabrication - Google Patents
Structure finfet et son procédé de fabrication Download PDFInfo
- Publication number
- WO2015054925A1 WO2015054925A1 PCT/CN2013/085620 CN2013085620W WO2015054925A1 WO 2015054925 A1 WO2015054925 A1 WO 2015054925A1 CN 2013085620 W CN2013085620 W CN 2013085620W WO 2015054925 A1 WO2015054925 A1 WO 2015054925A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- source
- region
- diffusion barrier
- drain
- drain extension
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 77
- 239000010410 layer Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 239000011229 interlayer Substances 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 52
- 239000012535 impurity Substances 0.000 claims description 35
- 238000005468 ion implantation Methods 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000002347 injection Methods 0.000 abstract description 10
- 239000007924 injection Substances 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 230000008569 process Effects 0.000 description 19
- 238000009826 distribution Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000001629 suppression Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 241000849798 Nita Species 0.000 description 1
- 235000003976 Ruta Nutrition 0.000 description 1
- 240000005746 Ruta graveolens Species 0.000 description 1
- 229910004491 TaAlN Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 235000005806 ruta Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
Definitions
- the impurity forming the source/drain extension region is boron
- the impurity forming the diffusion barrier is carbon, and the implantation dose is 1.5el5cm" 2 ⁇ 7.5el5ecm" 2 o
- the present invention contemplates fabrication of a semiconductor fin 200 located above a village floor 100.
- both the village bottom 100 and the fins 200 are composed of silicon.
- the fin 200 is formed by epitaxially growing a semiconductor layer on the surface of the substrate 100 and etching the semiconductor layer.
- the epitaxial growth method may be molecular beam epitaxy (MBE) or other methods, and the etching method may be dry etching. Etch or dry/wet etching.
- the fin 200 has a height of 100 to 150 nm.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
La présente invention concerne un procédé de fabrication d'un FinFET, qui comprend les étapes suivantes : a. fournir un substrat (100), une ailette (200) et un empilement (500) de pseudo-grille; b. réaliser une injection d'ions sur la structure semi-conductrice, puis former une région (202) d'extension de source/drain; c. réaliser une injection d'ions sur la structure semi-conductrice, puis former une région (203) de blocage de diffusion, dans laquelle une position d'une valeur de concentration de pic dans la région (203) de blocage de diffusion est cohérente avec la région (202) d'extension de source/drain, c'est-à-dire qu'une erreur dans une direction de la profondeur d'une source/drain ne dépasse pas 5 nm; d. former des parois latérales (505) sur les deux côtés de l'empilement (500) de pseudo-grille; e. former une région de source/drain dans le substrat sur les deux côtés de la paroi latérale et réaliser un recuit, puis former une couche (450) diélectrique intermédiaire; et f. retirer l'empilement (500) de pseudo-grille afin de former une vacance de pseudo-grille, puis déposer une couche (600) d'empilement de grille dans la vacance de pseudo-grille. Le procédé visant à empêcher une diffusion non uniforme dans une région dopée de source/drain selon la présente invention améliore efficacement les performances du dispositif sans augmenter la complexité de traitement.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310478709.8A CN104576384A (zh) | 2013-10-14 | 2013-10-14 | 一种finfet结构及其制造方法 |
| CN201310478709.8 | 2013-10-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015054925A1 true WO2015054925A1 (fr) | 2015-04-23 |
Family
ID=52827606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2013/085620 WO2015054925A1 (fr) | 2013-10-14 | 2013-10-22 | Structure finfet et son procédé de fabrication |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104576384A (fr) |
| WO (1) | WO2015054925A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102552949B1 (ko) * | 2016-09-02 | 2023-07-06 | 삼성전자주식회사 | 반도체 장치 |
| EP3748689A1 (fr) * | 2019-06-06 | 2020-12-09 | Infineon Technologies Dresden GmbH & Co . KG | Dispositif à semi-conducteur et son procédé de production |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057118A (ja) * | 2000-08-09 | 2002-02-22 | Toshiba Corp | 半導体装置とその製造方法 |
| CN1527368A (zh) * | 2003-03-04 | 2004-09-08 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| CN101202305A (zh) * | 2006-12-13 | 2008-06-18 | 恩益禧电子股份有限公司 | 具有改进的源极和漏极的半导体器件及其制造方法 |
| WO2009040707A2 (fr) * | 2007-09-27 | 2009-04-02 | Nxp B.V. | Procédé de fabrication d'un transistor à effet de champ à ailettes |
| US20110147812A1 (en) * | 2009-12-23 | 2011-06-23 | Steigerwald Joseph M | Polish to remove topography in sacrificial gate layer prior to gate patterning |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8441000B2 (en) * | 2006-02-01 | 2013-05-14 | International Business Machines Corporation | Heterojunction tunneling field effect transistors, and methods for fabricating the same |
-
2013
- 2013-10-14 CN CN201310478709.8A patent/CN104576384A/zh active Pending
- 2013-10-22 WO PCT/CN2013/085620 patent/WO2015054925A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057118A (ja) * | 2000-08-09 | 2002-02-22 | Toshiba Corp | 半導体装置とその製造方法 |
| CN1527368A (zh) * | 2003-03-04 | 2004-09-08 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| CN101202305A (zh) * | 2006-12-13 | 2008-06-18 | 恩益禧电子股份有限公司 | 具有改进的源极和漏极的半导体器件及其制造方法 |
| WO2009040707A2 (fr) * | 2007-09-27 | 2009-04-02 | Nxp B.V. | Procédé de fabrication d'un transistor à effet de champ à ailettes |
| US20110147812A1 (en) * | 2009-12-23 | 2011-06-23 | Steigerwald Joseph M | Polish to remove topography in sacrificial gate layer prior to gate patterning |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576384A (zh) | 2015-04-29 |
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