CN104507685A

CN104507685A - Transfer device and substrate treatment apparatus

Info

Publication number: CN104507685A
Application number: CN201380040811.8A
Authority: CN
Inventors: 铃木智也
Original assignee: Nikon Corp
Current assignee: Nikon Corp
Priority date: 2012-08-06
Filing date: 2013-08-02
Publication date: 2015-04-08
Anticipated expiration: 2033-08-02
Also published as: JP6287839B2; JP6481784B2; CN107253394B; JP2019096890A; CN107253394A; CN104507685B; JP6665953B2; JP6950767B2; JP2018082214A; JP2020145419A; JPWO2014024797A1; WO2014024797A1

Abstract

A transfer device is provided with: a plate holding part for holding a transfer plate having a porous plate formed from a porous material with a predetermined thickness and a transfer pattern layer formed on one surface side of the porous plate; an object holding part for holding an object to which the pattern layer of the transfer plate can be transferred in close contact with or in proximity to one surface of the transfer plate; and a fluid supply part for supplying a fluid with a predetermined pressure from the other surface side to the one surface side of the porous plate.

Description

Transfer device and substrate board treatment

Technical field

The present invention relates to transfer device and substrate board treatment.

The application is CLAIM OF PRIORITY based on No. 2012-173983, the Japanese Patent Application of applying on August 6th, 2012, and quotes its content at this.

Background technology

As the display element forming the display unit such as display equipment, be known to such as liquid crystal display cells, organic electroluminescent (organic EL) element, the electrophoresis element etc. that uses in Electronic Paper.As one of gimmick making said elements, be known to the gimmick (for example, referring to patent document 1) being such as called as roll-to-roll (roll to roll) mode (following, to be only designated as " roll-type ").

Roll-type gimmick is that the substrate of a sheet of roller by being wound in substrate supply side is sent, and the roller utilizing substrate to reclaim side batches while conveying substrate to the substrate sent, during substrate is sent to and is taken up, substrate forms the pattern (pattern) of display circuit, drive circuit etc. successively.In recent years, the demand of such as large-scale display equipment etc. is a lot, thus requires that the broad range on substrate forms the technology of pattern efficiently.As one of such technology, be known to the transfer printing (turning attached method) such as the patterned layer being previously formed in transfer printing board being transferred to substrate.

Patent document 1: No. 2006/100868th, International Publication

But, in transfer printing, when by patterned layer to substrate transfer printing time, a part for pattern likely residues in transfer printing board.

Summary of the invention

The object of embodiment involved in the present invention is, provides a kind of transfer device and the substrate board treatment that patterned layer can be suppressed when transfer printing to residue in transfer printing board.

The transfer device of an embodiment involved in the present invention possesses: version maintaining part, it keeps transfer printing board, and this transfer printing board has the patterned layer of the transfer printing of the side, face of the porous scutum formed by the porous material of specific thickness and the side being formed at this porous scutum; Object maintaining part, it to touch with the face of the side making this object and transfer printing board or close mode keeps turning attached object for the patterned layer of transfer printing board; And fluid supply unit, the fluid of its side, face from face side direction one side of the opposing party of porous scutum supply authorized pressure.

The substrate board treatment of an embodiment involved in the present invention possesses: substrate delivery section, and it is carried being formed as banded substrate; And multiple processing substrate portion, they process the substrate carried by aforesaid substrate delivery section, use above-mentioned transfer device as processing substrate portion.

The device manufacturing method of an embodiment involved in the present invention is on the substrate of flexibility, manufacture the method comprising the electronic equipment of thin film transistor (TFT), described device manufacturing method comprises: the first operation, in this first operation, the side, face of one side of the porous scutum formed at the porous material by specific thickness, forms the electrode layer, semiconductor layer, the lit-par-lit structure body two-layer arbitrarily in insulating barrier that form above-mentioned thin film transistor (TFT); Second operation, in this second operation, making the side, face of a side of the above-mentioned porous scutum being formed with above-mentioned lit-par-lit structure body, to touch with the surface of aforesaid substrate or under close state, from the fluid of side, the face supply authorized pressure of the face side direction one side of the opposing party of above-mentioned porous scutum, the above-mentioned lit-par-lit structure body on above-mentioned porous scutum is needed on the surface of aforesaid substrate; And the 3rd operation, in the 3rd operation, on the above-mentioned surface of lit-par-lit structure body on surface or the surface of aforesaid substrate that are transferred to aforesaid substrate, formed and form the remaining layer of above-mentioned thin film transistor (TFT) or the wiring layer with above-mentioned Electrode connection.

According to embodiment involved in the present invention, when can be provided in transfer printing, patterned layer is suppressed to residue in transfer device and the substrate board treatment of transfer printing board.

Accompanying drawing explanation

Fig. 1 is the integrally-built stereogram of the transfer device that the first embodiment involved in the present invention is shown.

Fig. 2 is the sectional view of the structure of the Porous sheet material that present embodiment is shown.

Fig. 3 is the stereogram of the structure of the jet roller that present embodiment is shown.

Fig. 4 is the stereogram of the internal structure of the jet roller that present embodiment is shown.

Fig. 5 is the partial sectional view of an example of the transfer printing action that present embodiment is shown.

Fig. 6 is the partial sectional view of an example of the transfer printing action that present embodiment is shown.

Fig. 7 is the partial sectional view of an example of the transfer printing action that present embodiment is shown.

Fig. 8 A is the sectional view of the variation of the jet roller illustrated in present embodiment.

Fig. 8 B is the sectional view of the variation of the jet roller illustrated in present embodiment.

Fig. 9 is the integrally-built figure of the device fabrication system that the second embodiment involved in the present invention is shown.

Figure 10 is the sectional view of other structure that Porous sheet material involved in the present invention is shown.

Figure 11 is the sectional view be described the transfer printing of the multilayer graph pattern layer utilizing Porous sheet material involved in the present invention to carry out.

Figure 12 A is the figure of the example that the circuit utilizing the device manufacturing method of the 3rd embodiment involved in the present invention to be formed is shown.

Figure 12 B is the figure of the example that the circuit utilizing the device manufacturing method of the 3rd embodiment involved in the present invention to be formed is shown.

Figure 12 C is the figure of the example that the circuit utilizing the device manufacturing method of the 3rd embodiment involved in the present invention to be formed is shown.

Figure 13 A is the figure of an example of the circuit formation process of the device manufacturing method that the 3rd embodiment involved in the present invention is shown.

Figure 13 B is the figure of an example of the circuit formation process of the device manufacturing method that the 3rd embodiment involved in the present invention is shown.

Figure 13 C is the figure of an example of the circuit formation process of the device manufacturing method that the 3rd embodiment involved in the present invention is shown.

Figure 14 A is the figure of an example of the circuit formation process of the device manufacturing method that the 3rd embodiment involved in the present invention is shown.

Figure 14 B is the figure of an example of the circuit formation process of the device manufacturing method that the 3rd embodiment involved in the present invention is shown.

Figure 14 C is the figure of an example of the circuit formation process of the device manufacturing method that the 3rd embodiment involved in the present invention is shown.

Detailed description of the invention

[the first embodiment]

First embodiment involved in the present invention is described.

Fig. 1 is the stereogram of the structure of the transfer device 100 that present embodiment is shown.

As shown in Figure 1, transfer device 100 uses have flexibility and be formed as the endless belt-shaped Porous sheet material Ts as transfer printing board by porous material, the patterned layer of the outer peripheral face Ta being formed at this Porous sheet material Ts is needed on the device of the substrate P of the film-form as transfer printing object.Transfer device 100 has the sheet material maintaining part (version maintaining part) 10 keeping Porous sheet material Ts, the gas supply part (fluid supply unit) 30 keeping the board holder (object maintaining part) 20 of substrate P and the inner peripheral surface Tb side direction outer peripheral face Ta side supply gas from Porous sheet material Ts.In addition, substrate P can adopt the resin-made membrane such as PET (PET), PEN (PEN), plastic sheet, the very thin glass plate that can bend, be substrate, the so-called flexible base board that the paper, cloth etc. of the thin-film sheet of foil-like or the absorption of being processed into suppression liquid have flexibility by stainless steel calendering.

In the present embodiment, be especially conceived to the cheap this point of fee of material, and adopt resin-made membrane, plastic sheet as substrate P.

Here, before each structure that transfer device 100 is described, first the structure of the Porous sheet material Ts used in present embodiment is explained.Fig. 2 is the sectional view of the structure that Porous sheet material Ts is shown.

As shown in Figure 2, Porous sheet material Ts has porous layer 11, substrate metal layer 12 (covering part) and electrodeposited coating 13 (covering part).

Porous layer 11 adopts the porous materials such as such as polyimides and is formed as the thickness of such as 20 μm ~ about 50 μm.Porous layer 11 can make gas pass through from its inside.Second 11b of porous layer 11 is equivalent to the inner peripheral surface Tb of Porous sheet material Ts.

This Porous polyimide film is such as be disclosed in the document of No. WO2010/038873 at international publication number.

Substrate metal layer 12 is formed as the pattern form specified at the first surface 11a of porous layer 11.The pattern form of substrate metal layer 12 becomes the shape relative to the patterned layer complementation for being transferred to substrate P.The pattern of substrate metal layer 12 such as by formation such as vapour deposition methods, and by a part of capping of the first surface 11a of porous layer 11.

Made electrodeposited coating 13 be laminated in substrate metal layer 12 by galvanoplastic.The surperficial 13a of electrodeposited coating 13 is equivalent to outer peripheral face (top layer) Ta of Porous sheet material Ts.Electrodeposited coating 13 has the pattern identical with substrate metal layer 12.Such as with the stipulated time, the Porous sheet material Ts had by depicting the substrate metal layer 12 of pattern be impregnated in electroplate liquid, electroless plating or metallide are carried out to it, thus, form electrodeposited coating 13 with required thickness.

Like this, a part of the first surface 11a of porous layer 11 is by the pattern capping of substrate metal layer 12 and electrodeposited coating 13.On the other hand, in the first surface 11a of porous layer 11, be not provided with the region of substrate metal layer 12 and electrodeposited coating 13, result defines the pattern of exposed division 14.That fills the patterned layer formed for being transferred to substrate P to this exposed division 14 is transferred material, carries out below describing to its detailed content.

Therefore, Porous sheet material Ts carries out transfer printing by the exposed division 14 caved in relative to substrate metal layer 12 and electrodeposited coating 13, thus, play the function same with the intaglio plate in printing.

When second 11b making gas from porous layer 11 passes through towards first surface 11a, this gas is stopped by substrate metal layer 12 and electrodeposited coating 13 and sprays from the exposed division 14 of first surface 11a.

This Porous sheet material (resin molding, film etc.) can heat resistance be utilized, the resin-based porous film of the aramid fiber that dimensional stability etc. are higher, the sintered porous matter formed body of ultra-high molecular weight polyethylene powder is cut and the ultra-high molecular weight polyethylene porous film made, the tetrafluoroethylene resin multiple aperture plasma membrane etc. of the excellents such as lyophobicity heat resistance resistance to chemical reagents, but, for the first surface 11a of porous layer 11, preferably there is the pore size less than the minimum dimension of the fine pattern of substrate metal layer 12, and the good material of flatness.

In addition, Porous sheet material also can utilize the surface fluorination multiple aperture plasma membrane by fluorine gas, the surface of the multiple aperture plasma membrane be made up of synthetic resin being carried out to fluorination treatment.

Next, each structure of transfer device 100 is described.

As shown in Figure 1, sheet material maintaining part 10 has roller R1 and roller R2, and they are for applying the tension force of regulation to Porous sheet material Ts and carrying this Porous sheet material Ts.At least one roller in roller R1 and roller R2 is set to rotate by not shown drive division.By making this roller rotate, the Porous sheet material Ts of ring-type can rotate to a direction.

As shown in Figure 1, board holder 20 has the impression cylinder DR for conveying substrate P.Impression cylinder DR is such as formed as the shape that cylindric, cylindric etc. outer peripheral face DRa forms barrel surface, and its periphery is covered by the elastomeric material of suitable thickness, resin material.Substrate P is transferred with the state of the outer peripheral face DRa being wound in impression cylinder DR.Impression cylinder DR be set to can by not shown rotary driving part circumferentially the rotating in a circumferential direction of face DRa.The outer peripheral face Ta that impression cylinder DR is arranged at substrate P and the Porous sheet material Ts making to be wound in outer peripheral face DRa touches the position of (or close).

In addition, jockey pulley TR1, TR2 are set to, and the part making the constant length on the length direction of Porous sheet material Ts (throughput direction) is stably touched with the outer peripheral face DRa substrate P being wound in impression cylinder DR.

Gas supply part 30 is configured at the inner side of endless belt-shaped Porous sheet material Ts.Gas supply part 30 has: jet roller ABR, and Porous sheet material Ts is pressed on substrate P and to this Porous sheet material Ts supply gas by it; And gas supply part 35, it can to above-mentioned jet roller ABR supply gas.

Fig. 3 is the stereogram of the structure that gas supply part 30 is shown.

As shown in Figure 3, jet roller ABR has: Cylindorical rod (the metallicity axle of tubulose) 31, and it is formed as cylindric; Bearing portion 32, the both ends of its axis direction in this Cylindorical rod 31 are configured with one respectively; Cylindric Porous pipe 33, it adopts porous material to be formed as cylindric, and is supported as can in the outer sideway swivel of Cylindorical rod 31 by bearing portion 32; And magnetic fluid 34, it is arranged between the outer peripheral face of Cylindorical rod 31 and the inner peripheral surface of Porous pipe 33.

Porous pipe 33 is such as shaped to wall thickness by firing porous ceramic material and is a few millimeter and the tubular with the internal-and external diameter of regulation.Porous pipe 33 can make gas-pressurized pass from inner circumferential surface to outer peripheral face via countless micro hole (pore).The minimum dimension (live width etc.) of the pattern form of the exposed division 14 formed according to the first surface 11a at Porous sheet material Ts, sets the average-size in hole, density.

Fig. 4 is the stereogram that the appearance after being removed by the Porous pipe 33 of the cylindrical shape shown in Fig. 3 is shown, Cylindorical rod 31 has hollow bulb 31a.This hollow bulb 31a is such as connected with gas supply part 35 via gas supplying path 35a such as pipe arrangements.Cylindorical rod 31 has hollow bulb 31a and the through opening portion 31b (blowing unit) in outside.Opening portion 31b is constructed as follows ejiction opening: on the direction that the axis (or rotation centerline of Porous pipe 33) of Cylindorical rod 31 extends, socket (slot) shape is formed as with the length corresponding with the width of Porous sheet material Ts, and the gas ejection will supplied from gas supply part 35 via gas supplying path 35a.

If spray the gas after pressurization from the opening portion 31b of Cylindorical rod 31, then the part that this gas is opposed with opening portion 31b from the inner peripheral surface of Porous pipe 33 is passed to the outer peripheral face of Porous pipe 33.Now, although ejection degree is because of the wall thickness of Porous pipe 33, the diameter in hole, the density in hole and different, gas is ejected from the outer peripheral face of Porous pipe 33 with roughly the same pressure distribution.

The pressure of this ejection gas is applied in second 11b of Porous sheet material Ts, and, from the gas-pressurized that the porous layer 11 of Porous sheet material Ts passes through, to be filled in first surface 11a side exposed division 14 be transferred the power that patterned layer that material formed applies this patterned layer is peeled off from first surface 11a.

In Fig. 1 before this, the opening portion 31b of the Cylindorical rod 31 shown in Fig. 3, Fig. 4 is towards impression cylinder DR.Therefore, the patterned layer that material formed that is transferred being filled in the exposed division 14 of the first surface 11a side of Porous sheet material Ts is peeled off from first surface 11a, and is carried out transfer printing by pressing on the surface of substrate P with brute force.

Now, the transfer printing power (crimp force) that patterned layer that material formed presses on substrate P that is transferred of Porous sheet material Ts side is depended on as exerted oneself: by the chucking power of impression cylinder DR and Porous pipe 33 pairs of substrate P and Porous sheet material Ts; The back pressure that ejection second the 11b side of gas to Porous sheet material Ts presses; And ejection gas makes to be transferred the peeling force that material peels off from exposed division 14.

In above structure, Porous pipe 33 supports as can rotating in a circumferential direction along Cylindorical rod 31 by bearing portion 32.A Porous pipe 33 complete cycle scope is in the circumferential formed by porous material, and therefore, the gas-pressurized from the opening portion 31b of Cylindorical rod 31 can pass through from all sites of the complete cycle scope the circumference of Porous pipe 33.Second 11b of Porous sheet material Ts and the outer peripheral face 33a of Porous pipe 33 touches.Porous pipe 33 can rotate around Cylindorical rod 31 by bearing portion 32.Therefore, Porous pipe 33 such as can be made drivenly to rotate in the mobile corresponding mode with Porous sheet material Ts, Porous pipe 33 maybe can be made drivenly to rotate in the mode corresponding with the rotation being driven in rotation the impression cylinder DR that portion's (motor etc.) drives.

But, magnetic fluid 34 shown in Fig. 3, Fig. 4 fills up being formed at the minim gap between the outer peripheral face of Cylindorical rod 31 and the inner peripheral surface of Porous pipe 33 (such as 1 millimeter ~ several millimeters), and its Main Function is the clearance portion preventing the gas-pressurized sprayed from opening portion 31b from moving into the outer peripheral face of Cylindorical rod 31 and the inner peripheral surface of Porous pipe 33.Therefore, magnetic fluid 34 plays function as the bubble-tight seal improved between opening portion 31b and the inner peripheral surface of Porous pipe 33.

The magnet (permanent magnet, electromagnet etc.) that magnetic fluid 34 is buried underground by the outer peripheral face at Cylindorical rod 31 catches.Particularly at the periphery of the opening portion 31b of the outer peripheral face of Cylindorical rod 31, in order to make magnetic fluid not trickle down in the 31b of opening portion, the kicker magnet (permanent magnet of terres rares) arranged in the mode of being surrounded by opening portion 31b is set.

In addition to the foregoing structure, as shown in Figure 1, transfer device 100 has patterned layer forming portion PH, and this patterned layer forming portion PH is such as forming patterned layer at the exposed division 14 of the outer peripheral face Ta being formed at Porous sheet material Ts.Patterned layer forming portion PH adopts the functional material of pie graph pattern layer, the conductive ink such as comprising nano metal particles, the ultraviolet hardening resin comprising carbon nanocoils, dry time crystallization and to form aqueous, the gelatinous functional material printing (filling) such as the organic matter of semiconductor, the solvent of oxide first-class to the printing of the exposed division 14 of Porous sheet material Ts.In this case, the head of the ink-jetting style that print head preferably can be aimed at exposed division 14 and functional material is dripped, but the version (lithographic plate or cylinder version) used in screen painting, intaglio printing, letterpress, hectographic printing etc. also can be used as print head.

In addition, in the present embodiment, as shown in Figure 2, the substrate metal layer 12 and the electrodeposited coating 13 that are formed at the outer peripheral face Ta of Porous sheet material Ts form barrier rib layer (protuberance), and the exposed division 14 around it forms recess.Therefore, for patterned layer forming portion PH, following coating mechanism can be had, that is: the region supplying exposed division 14 to be formed on Porous sheet material Ts, similarly coating functions material or optionally coating functions material, then, by the functional material removing residued in the barrier rib layer of substrate metal layer 12 and electrodeposited coating 13, and functional material is residued in exposed division 14.

In addition, patterned layer forming portion PH can arrange multiple in the mode arranged along the throughput direction of Porous sheet material Ts.

In addition, transfer device 100 has supporting device PLT, and the inner peripheral surface Tb of this supporting device PLT to the part being formed patterned layer (being filled to the layer of exposed division 14) in Porous sheet material Ts by patterned layer forming portion PH supports.Supporting device PLT can adopt such as to utilize and be formed as the air-cushion type supporting member (holder) that plane bearing-surface supports inner peripheral surface Tb in a non-contact manner, the going barrel etc. reeled to a part of Porous sheet material Ts.

Next, the action of the transfer device 100 with said structure is described.

First, for transfer device 100, in patterned layer forming portion PH, as shown in Figure 5, under the state making supporting device PLT support Porous sheet material Ts, what exposed division 14 filling to this Porous sheet material Ts specified is transferred material (aqueous or gelatinous functional material), is formed thus and is transferred patterned layer 15.

Now, the bottom (the first surface 11a of porous layer 11) of the exposed division 14 that the functional material that formation is transferred patterned layer 15 is filled into, be preferably formed to the molecular configuration, the i.e. functional material that there is lyophobicity relative to functional material to be difficult to enter in the hole of porous layer 11, and the state that adhesion is bad.For this reason, the chemical treatment utilizing the surface modification of the fluorine-based bottom by exposed division 14 (the first surface 11a of porous layer 11) such can be implemented, such as in order to not be filled in the hole of porous layer 11 by the solution of SAM (Self Assemble Monolayer: the self-assembled monolayer) material with lyophobicity, spray deposition etc. can be utilized to apply.

Next, transfer device 100 makes Porous sheet material Ts move by making roller R1 and roller R2 rotate, and, by making impression cylinder DR rotate, substrate P is moved, thus, the patterned layer 15 that is transferred of the first surface 11a (Ta) being formed at Porous sheet material Ts is contacted (crimping) with the transfer printing subject area in substrate P.Meanwhile, gas-pressurized is sprayed from the opening portion 31b of the Cylindorical rod 31 forming jet roller ABR to second 11b (Tb) of Porous sheet material Ts.

In this condition, as shown in Figure 6, transfer device 100 from jet roller ABR to the inner peripheral surface Tb of Porous sheet material Ts with regulation pressure feed gas.The region that air-flow is being formed with substrate metal layer 12 and electrodeposited coating 13 being supplied to the inside of porous layer 11 from inner peripheral surface Tb is stopped, therefore, pressure is applied in exposed division 14.Utilize this pressure (peeling force) and the patterned layer 15 that is transferred being formed at exposed division 14 is pressed to substrate P side, making to be transferred patterned layer 15 and engage with substrate P (turning attached).

Continue roller R1 and roller R2 is rotated, and impression cylinder DR rotated, thus, as shown in Figure 7, be configured at exposed division 14 be transferred the state that patterned layer 15 is transferred to substrate P under, Porous sheet material Ts and substrate P are carried.By repeatedly carrying out this action, and the patterned layer 15 that is transferred be formed on Porous sheet material Ts is transferred in substrate P continuously.

In the above embodiment, in order to improve the surface of substrate P and form the adhesion being transferred the functional material of patterned layer 15, preferably in advance by surfaction, or the film that improve adhesion is pre-formed.

Further, peel off well to make to be transferred patterned layer 15 from exposed division 14, there is the guiding mechanism changed in the circumferential width that can arrange the opening portion 31b of the Cylindorical rod 31 that can make ejection gas-pressurized, maybe can change the opening shape of opening portion 31b itself.

Fig. 8 A and 8B shows above-mentioned this variation.Fig. 8 A shows the opposite disposed situation that can make the circumferential width of opening that the plate 31w changed occurs near the peripheral part of the opening portion 31b of Cylindorical rod 31.Plate 31w is configured to move up in the week of Cylindorical rod 31, thus can adjust the circumferential width in the region on the inner peripheral surface of the Porous pipe 33 of injected gas-pressurized.

Fig. 8 B shows following example: the ejiction opening of the gas-pressurized being formed at the outer peripheral face of Cylindorical rod 31 is set to the little opening 31h arranged discretely in the axial direction, replaces continuous print socket shape in the axial direction with this.The groove 31g that each little opening 31h and the inner peripheral surface at Cylindorical rod 31 extend configuration is in the axial direction communicated with.As shown in this Fig. 8 B, if form ejiction opening by multiple little opening 31h, then can also embody following advantage: the region that can reduce the magnetic fluid 34 surrounding above-mentioned little opening 31h, thus the magnet Mg such as permanent magnet can be made to reduce.

As shown in above-mentioned Fig. 8 A and 8B, the opening for gas-pressurized ejection is reduced, and the flow velocity of the gas that the inner peripheral surface to Porous pipe 33 can be made spray becomes greatly, can also increase the power making to be transferred patterned layer 15 and peel off from exposed division 14.

Therefore, when by Porous sheet material Ts be transferred patterned layer 15 to the transfer printing of substrate P side time, the outer peripheral face Ta of Porous sheet material Ts and the surface of substrate P can be made not to touch, but be separated with separating small gap (such as several μm ~ tens of μm).If can Porous sheet material Ts and substrate P be made not to touch but carrying out under close state turning attached like this, then turn attached before easily with micron order, relative positioning is carried out to Porous sheet material Ts and substrate P, the patterned layer that new patterned layer can also be made to aim at be formed in substrate P and overlap with it.

As mentioned above, the transfer device 100 of present embodiment possesses: sheet material maintaining part 10, it keeps Porous sheet material Ts, wherein, what described Porous sheet material Ts had the porous layer 11 formed by the porous material of specific thickness and the first surface 11a side being formed at porous layer 11 is transferred patterned layer 15; Board holder 20, for can for for the substrate P being transferred patterned layer 15 turns attached (predetermined turn attached) of this Porous sheet material Ts, described board holder 20 is remained to be touched with the outer peripheral face Ta of Porous sheet material Ts or close; And gas supply part 30, it supplies the gas of authorized pressure from second 11b of porous layer 11 to first surface 11a, therefore, utilize the pressure of the gas supplied via Porous sheet material Ts, the patterned layer 15 that is transferred being configured at the outer peripheral face Ta of Porous sheet material Ts is pressed to substrate P.Thereby, it is possible to suppress patterned layer 15 to residue in Porous sheet material Ts when transfer printing.

[the second embodiment]

Second embodiment involved in the present invention is described.

Fig. 9 shows the overall structure of the device fabrication system (substrate board treatment) 1 of the transfer device 100 applying above-mentioned first embodiment.

As shown in Figure 9, the manufacturing line of present embodiment is provided with: treating apparatus U1 in earlier stage, it implements process in the early stage (surfaction etc.) of regulation to the substrate P of the strip being wound in donor rollers FR1; Transfer device U2, it carries out pattern transfer printing to the substrate P after process in early stage; And aftertreatment device U3, it implements follow-up process to the substrate P after pattern transfer printing.

Transfer device U2 adopts the transfer device 100 of above-mentioned first embodiment.Except illustrate in the above-described first embodiment sheet material maintaining part 10, board holder 20, except gas supply part 30, transfer device U2 also has: patterning device 40, it is for forming pattern on the surface of endless belt-shaped Porous sheet material Ts; Cleaning device 50 (maintenance department), it cleans the Porous sheet material Ts that the pattern on Porous sheet material Ts is transferred after device U2 is transferred to substrate P; Drying device 60 (maintenance department), it makes the Porous sheet material Ts after cleaning dry; And substrate treating apparatus 70 (maintenance department), the base treatment of regulation is implemented on its surface to dried Porous sheet material Ts.

Be provided with in patterning device 40: multiple printing head (printing head PH1, printing head PH2 and printing head PH3), ink material is coated on the surface (exposed division 14) of the Porous sheet material Ts2 after base treatment by them by mode of printing, ink-jetting style etc., form the pattern of various electrode section, wiring portion etc. of TFT, organic EL thus; And supporting device PLT, it is corresponding with each printing head (PH1, PH2, PH3), and is the plane air-cushion type keeper supported the back side of Porous sheet material Ts2 or the going barrel etc. reeled to a part of Porous sheet material Ts2.

The substrate P being wound in donor rollers FR1 is sent into towards treating apparatus U1 in early stage with fixing speed in X direction by the driven roller DR1 clamped.Treating apparatus U1 in early stage face Pa down in the surface and figure of substrate P is formed and makes the transfer printing of pattern (fixing) firmly basalis.Above-mentioned basalis is formed: his-and-hers watches aspect carries out the method for upgrading (forming the face of activate) by the surperficial irradiating electron beam Isoenergetical line to substrate P by following method etc.; And the method making the material for the pattern of transfer printing be attached at the adhesive phase of substrate P is securely piled up compared with unfertile land.

For the substrate P after process in early stage, air diverts bar (air turn bar) ATB is utilized to change throughput direction in a non-contact manner, this substrate P is set up in these parts according to the order of the roller R1 in transfer device U2, air diverts bar ATB, impression cylinder DR, air diverts bar ATB, roller R2, air diverts bar ATB, and it is carried to ensuing aftertreatment device U3.

Rotary speed, the moment of torsion of pair roller R1 and roller R2 control, to keep the tension force of regulation and in the conveying direction substrate P to be wound in impression cylinder DR.The peripheral part of impression cylinder DR is made up of metal or vulcanie etc., and its outer peripheral face is formed as the higher cylindrical shape of pure circularity.

And be provided with in transfer device U2: jockey pulley TR1 and jockey pulley TR2, they touch with the substrate P of the downside being wound in impression cylinder DR for making the patterned Porous sheet material Ts1 sent here from patterning device 40; And jet roller ABR.For jockey pulley TR1, jockey pulley TR2 and jet roller ABR, the position in their Z-direction can both be adjusted by actuator Act.

As illustrated in the above-described first embodiment, jet roller ABR possesses following function, that is: when Porous sheet material Ts1 touches (crimping) with substrate P in the lower portion of impression cylinder DR, from the rear side ejection Compressed Gas of Porous sheet material Ts1, the patterned layer 15 that is transferred of the upper surface being formed at Porous sheet material Ts1 is ideally peeled off.

Make the Porous sheet material Ts after being transferred patterned layer 15 stripping pass through from roller R10, roller R11 and turn back by transfer device U2, this Porous sheet material Ts is carried to the groove that washes in cleaning device 50, utilize the cleaning fluid sprayed from the washer jet etc. of high pressure to clean it, then utilize pure water to carry out rinsing washing process.Then, Porous sheet material Ts is transported in drying device 60, utilizes hot blast, is made by the mode of infrared radiation Porous sheet material Ts dry, fully to remove the moisture entered in Porous.

Porous sheet material Ts (with substrate metal layer 12 and electrodeposited coating 13) after dry process is transported to substrate treating apparatus 70, again carries out required substrate fabrication to form pattern.In this base treatment, following character is given to substrate, that is: the eyelet of the exposed division 14 of Porous sheet material can not be made to block (guarantee aeration), make the character that the material being transferred patterned layer 15 being formed at exposed division 14 is easily easily peeled off, such as, it is made to have lyophobicity to a certain degree relative to pattern material.As an example, the SAM material etc. that can illustrate illustrating before this is optionally coated on the exposed division 14 of Porous sheet material.

Porous sheet material Ts2 after base treatment turns back by roller R12 and roller R13, and is again delivered to patterning device 40.

Between roller R12 and roller R13, be provided with the tension adjustment mechanism based on air diverts bar ATB, utilize actuator Act that air diverts bar ATB is moved in X direction, thus adjust the tension force of endless belt-shaped Porous sheet material Ts entirety.

As mentioned above, the device fabrication system 1 of present embodiment possesses: board holder 20 (substrate delivery section), and it is formed as banded substrate P for carrying; And multiple processing substrate portion (in earlier stage treating apparatus U1, transfer device U2 and aftertreatment device U3), they process the substrate P of being carried by aforesaid substrate maintaining part 20, transfer device U2 adopts the transfer device 100 of the first embodiment involved in the present invention, therefore, it is possible to suppress to be transferred patterned layer 15 to residue in Porous sheet material Ts when transfer printing.Thereby, it is possible to obtain the higher and device fabrication system 1 that yield rate is higher of processing accuracy.

Technical scope of the present invention is not limited to above-mentioned embodiment, can suitably change without departing from the scope of spirit of the present invention.

Such as, in the above-described first embodiment, as the structure of Porous sheet material Ts, being listed below structure is that example is illustrated: be formed with substrate metal layer 12 at the first surface 11a of porous layer 11 by vapour deposition method, and electrodeposited coating 13 is formed on this substrate metal layer 12, but, be not limited thereto.Such as shown in Figure 10, also can be configured to, form vapor-deposited film 16 at the first surface 11a of porous layer 11, then, forming the pattern of exposed division 14 by etching vapor-deposited film 16.In this case, the surperficial 16a of vapor-deposited film 16 is equivalent to the outer peripheral face Ta of Porous sheet material Ts.

In addition, in the above-described embodiment, as the fluid supplied to Porous sheet material Ts, enumerating gas is that example is illustrated, but is not limited thereto.Such as hydrophobic functional material (ink etc.) will be had for being transferred patterned layer 15 and under being filled in the situation in the exposed division 14 of Porous sheet material Ts etc., also can being configured to use the liquid such as pure water as fluid.

In addition, in the above-described embodiment, as porous scutum, enumerate and use the structure of Porous sheet material Ts to be illustrated for example, but be not limited thereto.The surface that such as also can be configured to the Porous pipe 33 of the jet roller ABR shown in Fig. 3 directly forms patterned layer (barrier rib layer that substrate metal layer 12 and electrodeposited coating 13 are formed and be transferred patterned layer 15), for each patterned layer, this Porous pipe 33 is directly abutted with substrate P.In this case, Porous pipe 33, by being formed with the lamellar porous scutum of the flexibility of the curvature bending of regulation, using the face of the opposite side of this lamellar porous scutum as inner side, and is set to the state of the outer peripheral face being wound in Cylindorical rod 31 by Porous pipe 33.

In addition, in the above-described embodiment, whole the structure arranging porous material being set forth in Porous sheet material Ts is that example is illustrated, but is not limited thereto, and also can be configured to only at the area configurations porous material formed for patterned layer.

In addition, in the above-described embodiment, enumerating from jet roller ABR to the structure of Porous sheet material Ts supply gas is that example is illustrated, but can be configured to, on this basis, jet roller ABR also possesses the suction unit that can attract Porous sheet material Ts.Specifically, enumerating the structure shown in Fig. 3 is that example is described, and can enumerate the structure etc. be connected with the hollow bulb 31a of Cylindorical rod 31 by vavuum pump etc.

But in the above embodiment, citing shows the situation of transfer printing one deck patterned layer 15 in substrate P, but, as shown in figure 11, two-layer above patterned layer 15A also can be formed.

In fig. 11, above the porous layer 11 of Porous sheet material Ts, such as, utilize coincidence exposure technique and the optical lithographies such as photoetching, form the first patterned layer 16M based on films such as metal, oxide, nitride, and stacked second patterned layer 16N thereon.

At the exposed division 14 of such Porous sheet material Ts, turn attached by forming the functional material being transferred patterned layer 15 to substrate P side by the mode of coating or evaporation, thus the patterned layer 15A of multi-ply construction can be formed.

In addition, patterned layer 16N, 16M that the porous layer 11 of Porous sheet material Ts touches the multi-ply construction of formation can be formed by the mode of following two-stage etching, that is: the layer of same material is made to pile up with same thickness, then, apply the first mask and carry out the first etching, this first mask is used for, by above-mentioned accumulation horizon removing till the first surface 11a arriving porous layer 11, then, being applied for the second mask of the formation second layer and carrying out the second etching.

[the 3rd embodiment]

Next, with reference to Figure 12 A ~ 14C, the 3rd embodiment involved in the present invention is described.In the present embodiment, as an example, using the image element circuit portion of organic EL (AMOLED) display of active matrix mode as manufacturing object, its formation method is described.The image element circuit portion of displayer is such as formed as the such circuit structure of Figure 12 A, has: signal of video signal bus Sy, and it is for supplying the signal corresponding with the brightness of signal of video signal; Scanning bus Sh, it is for supplying the sweep signal (synchronised clock) of selection level scan line; Power bus Vdd, it is for applying positive supply voltage to image element circuit portion; And power bus Vss, it is for applying the supply voltage (or earthing potential) born.

For each pixel (sub-pixel of RGB), the first film transistor TR1 at least arranging the on/off switching luminescent layer OLED is (following, be set to TFT-TR1) and the second thin film transistor (TFT) TR2 (below, being set to TFT-TR2) these two transistors of the electric current corresponding with the brightness of signal of video signal are supplied to luminescent layer OLED.The source electrode S of TFT-TR1 is connected with signal of video signal bus Sy, and the gate electrode G of TFT-TR1 is connected with scanning bus Sh.Further, the drain electrode D of gate electrode G and the TFT-TR1 of TFT-TR2 connects, and the drain electrode D of TFT-TR2 is connected with power bus Vdd, and the source electrode S of TFT-TR2 is connected with the anode-side of luminescent layer OLED.The cathode side of luminescent layer OLED is connected with power bus Vss, between the gate electrode G (the drain electrode D of TFT-TR1) and power bus Vss of TFT-TR2, is connected with the capacitor CP of the fluorescent lifetime for keeping luminescent layer OLED.

An example of planar configuration when being formed at by the circuit structure of this Figure 12 A in the substrate P that illustrates in each embodiment is before this shown in Figure 12 B.Sandwich by the insulating barrier Iso shown in circle at the cross section of signal of video signal bus Sy, scanning bus Sh, power bus Vdd (Vss).The semiconductor layer Sc forming TFT-TR1, TFT-TR2 is formed at lower side (substrate P side) in the present embodiment, this semiconductor layer Sc is formed drain electrode D and source electrode S, this drain electrode D and source electrode S are formed the insulating barrier Iso forming gate insulating film, and then, this insulating barrier Iso forms gate electrode G.Figure 12 C illustrates and in Figure 12 B, carries out crosscut to the drain electrode D of TFT-TR1 and source electrode S and carry out the C-C ' of crosscut to the cross-sectional configuration of looking to the drain electrode D of TFT-TR2.

As Figure 12 C, be formed on the surface of substrate P integratedly to the supporting course MR of the insulating properties that semiconductor layer Sc, the drain electrode D of each TFT, source electrode S support, this supporting course MR is laminated with insulating barrier Iso, the gate electrode G as gate insulating film or a part of bus.In the present embodiment, by the supporting course MR that sandwiched is such, the transfer printing of the middle Porous sheet material Ts illustrated such as use the second embodiment before this can be applied.

Figure 13 A illustrates and on the Porous sheet material Ts that Fig. 5 or Figure 10 is before this such, forms supporting course MR and by its transfer printing (crimping) in the appearance of substrate P.Supporting course MR using be set to source electrode S, the drain electrode D of the major part comprised as TFT-TR1 and TFT-TR2, semiconductor layer Sc suitable planar dimension (such as, 50 μm × 25 μm) mode, in exposed division that the porous layer 11 being formed at Porous sheet material Ts exposes 14 (with reference to Fig. 5 or Figure 10).In addition, comprise source electrode S, drain electrode D, the aggregate thickness (hundreds of nm ~ several μm) of substrate metal layer 12 that the thickness of supporting course MR of semiconductor layer Sc is approximately the upper surface (11a) being laminated in porous layer 11 and electrodeposited coating 13.

For the supporting course MR that Figure 13 A is such, as shown in Figure 13 B, Figure 13 C, first, in the first stage, on the first surface 11a of the porous layer 11 in the exposed division 14 of Porous sheet material Ts, form source electrode S and the drain electrode D of each TFT be made up of lower resistance material (metal film, CNT etc.).Figure 13 B is the partial sectional view of the Porous sheet material Ts comprising exposed division 14, and Figure 13 C is the top view of exposed division 14.The width of the clearance G p that source electrode S is opposed with drain electrode D is called channel length, critically processes to make the various characteristics of TFT converge on required scope.

Surperficial 11a as the porous layer 11 in exposed division 14 (region of the window-like of being surrounded by the spaced walls of electrodeposited coating 13) critically locates and forms the method for source electrode S and drain electrode D, can adopt with the following method, that is: use the photoetching process (comprising exposure process, video picture operation, the etching work procedure based on energy line) of photoresist; Replace photoresist and adopt to make the lyophily on surface because of Ultraviolet radiation, auxiliary (photo asist) method of photo of photonasty functional material that lyophobicity changes (electroless plating etc. without the need to video picture and etching); Or also utilize the ink comprising conductive nanometer particle directly to describe the print process etc. of each electrode by ink-jet printer.When the width of correct management clearance G p from the depicting pattern stage, be applicable to adopting photoetching process, photo auxiliary law.But, on the surperficial 11a of porous layer 11, such as form wire (rectangle) pattern being connected with drain electrode D by source electrode S after electrode, when can use utilize the hot spot of laser beam to cut the operation of (cut-out) to the part being equivalent to clearance G p, utilize print process also can with enough precision formed clearance G p.

When forming source electrode S and drain electrode D as Figure 13 B, 13C, in order to the adhesion of the surperficial 11a not making electrode S, D and porous layer 11 is too high or too low, select and determine the average-size in the material of porous layer 11, the hole of surperficial 11a, and implementing the pretreatment (activate etc. based on UV irradiates) of surperficial 11a as required.

Next, in second stage, as shown in Figure 14 A, 14B, in order to the clearance G p between the source electrode S of each TFT and drain electrode D is covered, the semi-conducting material (organic semiconductor, oxide semiconductor, CNT etc.) of coating solution shape, and form semiconductor layer Sc by suitable crystalline orientation process.Figure 14 A is the top view of exposed division 14, and Figure 14 B is the partial sectional view of the Porous sheet material Ts comprising exposed division 14.As long as the forming range of semiconductor layer Sc is in reliably by the state that clearance G p covers, from the viewpoint of precision, preferably utilize the print process based on ink-jet printer etc.

Generally when drip or coating solution shape semi-conducting material and make semiconductor layer, due to the cause of crystallization, need high temperature to a certain degree.Such as when using based on the substrate of the flexibility of PET resin as substrate P, its glass transition temperature is approximately about 100 °, if be set to the temperature of more than this temperature, then can cause distortion (contraction) extremely.In the present embodiment, as an example, adopt the multiple aperture plasma membrane of polyimides as porous layer 11, thus the high-temperature process of 200 ° ~ about 250 ° can be carried out.As shown in Figure 14 A, 14B, utilizing the stage of the ink droplet coating semiconductor layer Sc sprayed, electrode S, D of metal level 12, electrodeposited coating (metal) 13 and metal system is only formed at Porous sheet material Ts, therefore, the drop of semiconductor layer Sc can be made under the high temperature of 200 ° ~ about 250 ° to realize crystallization (orientation) change, the raising of TFT performance can be expected.In addition, the option that can be used as the material of semiconductor layer Sc also increases to some extent.In addition, if replace polyimides by pottery, then can carry out the process of higher temperature to the material of porous layer 11.

Next, in the phase III, as Figure 14 A, 14B, be formed with the entirety of exposed division 14 (recess) of source electrode S, drain electrode D, semiconductor layer Sc, formed solution material, the such as ultraviolet hardening resin etc. of the insulating properties of supporting course MR with the coating of same thickness.When carrying out this coating, ink-jet printer can be utilized.In addition, when being only high lyophoby state by the surface set of the electrodeposited coating 13 of the surrounding of exposed division 14, also can by spray deposition, infusion process and the solution material of insulating properties is filled in exposed division 14.When the material of supporting course MR is ultraviolet hardening resin, then it is made to be hardened to suitable hardness to Porous sheet material Ts irradiation ultraviolet radiation.When the material of supporting course MR is other solution material, by the irradiation of infrared ray, microwave or the heating of heater, it is made moderately to harden the solvent composition removing in solution material.

By above first stage ~ process of phase III, Porous sheet material Ts forms supporting course MR with the state that Figure 13 A is such, therefore, as illustrated in each embodiment before this, as long as to 11b side, the back side supply gas-pressurized of Porous sheet material Ts, by supporting course MR transfer printing (crimping) assigned position in substrate P.

If be needed in substrate P by supporting course MR, then according to the cross-sectional configuration of Figure 12 C before this, be formed as the state that source electrode S and drain electrode D exposes at the upper surface of supporting course MR.Therefore, if on above-mentioned source electrode S and drain electrode D, utilize conductive ink that various bus Sy, Sh, Vdd, gate electrode G are formed in stacked mode by print processes such as ink-jets, then can guarantee to conduct.

When the image element circuit as Figure 12 B, 12C, on supporting course MR in substrate P, to be covered by semiconductor layer Sc and the size (area) that the end of source electrode S and drain electrode D can not be covered, form the insulating barrier Iso as gate insulating film.By print process, the spray deposition such as picture auxiliary law, the ink-jet applying the solution material as insulating barrier Iso in the part being lyophily by upgrading of the photonasty functional material and the material utilizing ultraviolet to be lyophily using the partly upgraded corresponding with insulating barrier Iso that apply lyophobicity on supporting course MR or the combination of flooding (immersing) method, form above-mentioned insulating barrier Iso.

After the insulating barrier Iso as gate insulating film is formed, on insulating barrier Iso, the upper surface of supporting course MR or the surface of substrate P, by print processes such as ink-jets, utilize non-electrolytic plating method of photo auxiliary law etc. and form gate electrode G, various bus Sy, Sh, Vdd, Vss.In the stage of formation insulating barrier Iso before this, if the photonasty functional material of the surface coating lyophobicity to supporting course MR, then as Figure 12 C, need the lyophobicity (based on fluorine molecule) that the end surface of the drain electrode D of the TFT-TR1 of the conductive ink of the stacked gate electrode G as TFT-TR2 keeps higher.Therefore, the ultraviolet corresponding with the pattern form of gate electrode G, various bus Sy, Sh, Vdd, Vss is irradiated on the surface in advance to supporting course MR, substrate P, is lyophily by the lyophobicity upgrading of this part.

In this case, as shown in Figure 12 B, being positioned at undermost is bus Vdd, the side of being located thereon be bus Sy, and then being positioned at above this bus Sy is bus Sh.Therefore, after the insulating barrier Iso as gate insulating film is formed, the wire portion formed at first by conductive ink becomes gate electrode G and the bus Vdd of TFT-TR2.Therefore, each surfaction of supporting course MR and substrate P is lyophily by the shape corresponding according to the gate electrode G and bus Vdd with TFT-TR2 and irradiation ultraviolet radiation.There is plating and the amido etc. of proper energy only exposes in the surface portion by this ultraviolet irradiation after upgrading (removing fluorine molecule), after Ultraviolet radiation, substrate P be impregnated in electroless plating liquid, thus form the distribution corresponding with the gate electrode G of TFT-TR2 and bus Vdd.Thus, the gate electrode G of drain electrode D and the TFT-TR2 of TFT-TR1 is electrically connected, and the drain electrode D of TFT-TR2 is electrically connected with bus Vdd.

Next, on bus Vdd, form insulating barrier Iso at the cross section of bus Sy and bus Sh.This also can implement only adopting the print processes such as ink-jet or adopt in the wet type operation of photo auxiliary law and print process simultaneously.Then, bus Sy is formed by print process or based on the auxiliary non-electrolytic plating method of photo etc.Thus, the source electrode S of TFT-TR1 is electrically connected with bus Sy.Next, the part of intersecting with bus Sh on bus Sy forms insulating barrier Iso, and then, the gate electrode G of bus Sh and TFT-TR1 is formed by print process or based on the auxiliary non-electrolytic plating method of photo etc.

As mentioned above, in the present embodiment, formed at Porous sheet material Ts integratedly and form the source electrode S of TFT and the lit-par-lit structure body of drain electrode D and semiconductor layer Sc, therefore, the temperature conditions that can be used in the crystallization of the semiconductor layer Sc of TFT relaxes, can high temperature be realized, although be in wet type operation, also can improve the performance (electronics degree of excursion, on/off ratio etc.) of TFT.

In addition, as indicated in fig. 12 c, it is poor that the source electrode S exposed on the surface of supporting course MR, drain electrode D have the ladder corresponding to the thickness of supporting course MR relative to the surface of substrate P.Therefore, be positioned at the various bus Sy of the both sides on the surface of substrate P and the surface of supporting course MR, Sh, Vdd (Vss) are formed to cross over the mode of the end difference of the periphery of supporting course MR.If the end difference of the periphery of supporting course MR is in subvertical state, then crosses over the various bus Sy of this end difference, Sh, Vdd (Vss) easily break and cannot successfully be formed.

Therefore, as Figure 14 B, for be formed at Porous sheet material Ts exposed division 14 electrodeposited coating 13 edge (side of spaced walls) for, make it be formed as the taper portion SL expanded laterally when observing from the inner side of exposed division 14 (window-like) in advance.Like this, as shown in Figure 14 C, the edge part SL ' being needed on the periphery of the supporting course MR in substrate P tilts to the inner side of supporting course MR, thus, cross over the various bus Sy of the edge part SL ' of this inclination, the broken string of Sh, Vdd (Vss) suppressed.

In addition, in the present embodiment, TFT is formed by the mode of top gate type, but, even if the TFT of bottom gate type, the lit-par-lit structure of electrode (source electrode and drain D) and the lit-par-lit structure of semiconductor layer, semiconductor layer and the insulating barrier forming TFT or the lit-par-lit structure of electrode (grid G) and insulating barrier can be formed too in the exposed division 14 of Porous sheet material Ts, and above-mentioned structure can be needed on substrate P side.

Generally, TFT is by separating clearance G p (channel length) opposed the first electrode layer, semiconductor layer, gate insulator as source electrode and drain electrode, forming as the lit-par-lit structure body of the second electrode lay of the grid covered by clearance G p.In the present embodiment, in above-mentioned layer, first electrode layer (source electrode S and drain electrode D) and semiconductor layer (Sc) this be two-layerly formed in the exposed division 14 of Porous sheet material Ts as lit-par-lit structure body together with supporting course MR, but, also can using the first electrode layer, semiconductor layer, gate insulator (Iso) these three layers together with supporting course MR as lit-par-lit structure body.In this case, an initial part only in the exposed division 14 of Porous sheet material Ts forms gate insulator (Iso), to cross over above this gate insulator and porous layer 11 in exposed division 14 first surface 11a and form the first electrode layer (source electrode S and drain electrode D), and then, above this first electrode layer and converge on gate insulator (Iso) inner side scope formed semiconductor layer (Sc).In addition, when the TFT of bottom gate type, on first surface 11a in the exposed division 14 of Porous sheet material Ts, initial formation semiconductor layer (Sc), crystallization is carried out by modes such as heating, then, with the size covered by this semiconductor layer, the lit-par-lit structure body being formed with the bilayer of gate insulator (Iso) thereon can be realized.In this case, the assigned position of gate electrode G in advance in substrate P is formed, and gate insulator is transferred on this gate electrode G with the lit-par-lit structure body of semiconductor layer together with supporting course MR.Like this, by arranging supporting course MR, can to make in the electrode layer of formation thin film transistor (TFT) (TFT), semiconductor layer, insulating barrier at least two-layer is formed in advance as lit-par-lit structure body on Porous sheet material Ts, thus can well by it to substrate P transfer printing.

The Porous sheet material Ts used in above each embodiment can be by different to average pore size, thickness or hole rate two kinds of structures that porous film is laminated.Such as can form following multi-ply construction, that is: the first porous layer that average pore size is the thinner thickness (such as 20 μm) of less than 5 μm is set in the face side of the Porous sheet material Ts formed for the tectosome such as TFT, wiring layer, the second porous layer that average pore size is the thicker thickness (such as 100 μm) of more than 10 μm is set in the quilt cover side of Porous sheet material Ts.

The explanation of Reference numeral

U2,100 ... transfer device; 1 ... device fabrication system; Ts ... Porous sheet material; Ta ... outer peripheral face; Tb ... inner peripheral surface; P ... substrate; DR ... impression cylinder; ABR ... jet roller; PH ... patterned layer forming portion; PLT ... supporting device; 10 ... sheet material maintaining part; 11 ... porous layer; 11a ... first surface; 11b ... second; 12 ... substrate metal layer; 13 ... electrodeposited coating; 13a ... surface; 14 ... exposed division; 15 ... be transferred patterned layer; 16 ... vapor-deposited film; 16a ... surface; 20 ... board holder; 30 ... gas supply part; 31 ... Cylindorical rod; 31a ... hollow bulb; 31b ... opening portion; 33 ... Porous pipe; 35 ... gas supply part; 40 ... patterning device; 50 ... cleaning device; 60 ... drying device.

Claims

1. a transfer device, is characterized in that, possesses:

Version maintaining part, it keeps transfer printing board, and this transfer printing board has the patterned layer of the porous scutum formed by the porous material of specific thickness and the transfer printing formed in the side, face of a side of this porous scutum;

Object maintaining part, it is to turning attached object to make the face of the one of this object and described transfer printing board touch or close mode keeps for the described patterned layer of described transfer printing board; And

Fluid supply unit, the fluid of its side, face from the face side direction one of the opposing party of described porous scutum supply authorized pressure.

2. transfer device according to claim 1, is characterized in that,

Described fluid is gas.

3. transfer device according to claim 1 and 2, is characterized in that,

Described porous scutum is formed as the tubular with outer peripheral face and inner peripheral surface.

4. transfer device according to claim 3, is characterized in that,

Described patterned layer is formed at the outer peripheral face of the porous scutum of described tubular.

5. transfer device according to claim 4, is characterized in that,

Described fluid supply unit can supply described fluid via the inside of described porous scutum to described outer peripheral face from the inner peripheral surface of the porous scutum of described tubular.

6. the transfer device according to any one of Claims 1 to 5, is characterized in that,

Described patterned layer is arranged at the plurality of positions on the face of a side of described porous scutum,

Described fluid supply unit can supply described fluid to the patterned layer of described plurality of positions respectively.

7. the transfer device according to any one of claim 1 ~ 6, is characterized in that,

Described fluid supply unit has blowing unit, this blowing unit be configured at the opposing party of described porous scutum side, face and for spraying described fluid,

Described transfer device also possesses drive division, and this drive division can make at least one party in described porous scutum and described blowing unit move, and carries out relative movement to make described blowing unit along the face of the opposing party of described porous scutum.

8. the transfer device according to any one of claim 1 ~ 7, is characterized in that,

Described transfer device also possesses suction unit, and this suction unit applies negative pressure from the inside of described porous scutum to the side, face of a side of described porous scutum.

9. the transfer device according to any one of claim 1 ~ 8, is characterized in that,

Described transfer printing board has covering part, the mode that this covering part is exposed with the part of the shape making the described patterned layer formed on the face of the side at described porous scutum, is covered in the face of a side of described porous scutum.

10. the transfer device according to any one of claim 1 ~ 9, is characterized in that,

Described transfer device also possesses maintenance department, and this maintenance department saves the surface state that described patterned layer is transferred to the described porous scutum after described object from damage.

11. transfer devices according to any one of claim 1 ~ 10, is characterized in that,

Described porous scutum is can with the thin plate of flexibility of the curvature bending of regulation,

Described transfer printing board is wound in the outer peripheral face of roller for inner side with the face of the opposing party of described porous scutum.

12. transfer devices according to any one of claim 1 ~ 10, is characterized in that,

Described porous scutum is flexible Porous sheet material, and described transfer printing board is configured to endless belt-shaped.

13. 1 kinds of substrate board treatments, is characterized in that possessing:

Substrate delivery section, it is carried being formed as banded substrate; And

Multiple processing substrate portion, they process the described substrate carried by described substrate delivery section,

The transfer device of use according to any one of claim 1 ~ 12 is as described processing substrate portion.

14. 1 kinds of device manufacturing methods, it is on the substrate of flexibility, manufacture the method comprising the electronic equipment of thin film transistor (TFT),

The feature of described device manufacturing method is, comprising:

First operation, in this first operation, the side, face of a side of the porous scutum formed at the porous material by specific thickness, forms the electrode layer, semiconductor layer, the lit-par-lit structure body two-layer arbitrarily in insulating barrier that form described thin film transistor (TFT);

Second operation, in this second operation, making the side, face of a side of the described porous scutum being formed with described lit-par-lit structure body, to touch with the surface of described substrate or under close state, from the fluid of side, the face supply authorized pressure of the face side direction one of the opposing party of described porous scutum, the described lit-par-lit structure body on described porous scutum is needed on the surface of described substrate; And

3rd operation, in the 3rd operation, on the surface of described lit-par-lit structure body on surface or the surface of described substrate that are transferred to described substrate, is formed and forms the remaining layer of described thin film transistor (TFT) or the wiring layer with described Electrode connection.

15. device manufacturing methods according to claim 14, is characterized in that,

Described lit-par-lit structure body comprises the source electrode of described thin film transistor (TFT) and the electrode layer of drain electrode and semiconductor layer.

16. device manufacturing methods according to claim 15, is characterized in that,

Described first operation comprises:

First stage, in this first stage, form the electrode layer of described source electrode and drain electrode in the side, face of a side of described porous scutum;

Second stage, in this second stage, in the scope that the clearance portion between described source electrode and drain electrode is covered, stacked described semiconductor layer; And

Phase III, in this phase III, in the side, face of a side of described porous scutum, form the supporting course that the electrode layer of source electrode and drain electrode described in the large young pathbreaker that specifies and described semiconductor layer surround.

17. device manufacturing methods according to claim 16, is characterized in that,

In the second operation, the lit-par-lit structure body of the described electrode layer that the side, face for the side at described porous scutum is formed and described semiconductor layer, is needed on the surface of described substrate together with described supporting course by it.