JP6481784B2 - Device manufacturing method - Google Patents

Description

The present invention relates to a device manufacturing method.
This application claims priority based on Japanese Patent Application No. 2012-173983 for which it applied on August 6, 2012, and uses the content here.

  As display elements constituting display devices such as display devices, for example, liquid crystal display elements, organic electroluminescence (organic EL) elements, electrophoretic elements used for electronic paper, and the like are known. As one of methods for manufacturing these elements, for example, a method called a roll-to-roll method (hereinafter simply referred to as “roll method”) is known (for example, refer to Patent Document 1).

  In the roll method, a single sheet-like substrate wound around a substrate supply side roller is sent out, the substrate is transported while being wound up by a substrate recovery side roller, and the substrate is sent out after being sent out. In this manner, a pattern such as a display circuit or a driver circuit is sequentially formed on a substrate until it is formed. In recent years, for example, there is a large demand for large display devices, and a technique for efficiently forming a pattern over a wide area on a substrate is required. As one of such techniques, for example, a transfer method (transfer method) in which a pattern layer previously formed on a transfer plate is transferred to a substrate is known.

International Publication No. 2006/100868

  However, in the transfer method, when the pattern layer is transferred to the substrate, a part of the pattern may remain on the transfer plate.

  The aspect which concerns on this invention aims at providing the device manufacturing method which can suppress that a pattern layer remains in a transcription | transfer plate at the time of transcription | transfer.

  A device manufacturing method according to an aspect of the present invention is a method of manufacturing an electronic device including a thin film transistor on a flexible substrate, and any two of an electrode layer, a semiconductor layer, and an insulating layer constituting the thin film transistor. A first step of forming a laminated structure of layers on one surface side of a porous plate made of a porous material having a predetermined thickness; and one of the porous plates on which the laminated structure is formed In a state where the surface side and the surface of the substrate are in close contact or close to each other, a predetermined pressure is applied from the ejection portion disposed on the other surface side of the porous plate toward the one surface side of the porous plate. While supplying a fluid, moving at least one of the porous plate and the ejection portion so that the ejection portion relatively moves along the other surface of the porous plate, Above laminated structure A second step of transferring to the surface of the substrate; and the surface of the laminated structure transferred to the surface of the substrate, or the surface of the substrate, connected to the remaining layers constituting the thin film transistor or the electrode. Forming a wiring layer.

  According to the aspect of the present invention, it is possible to provide a transfer apparatus and a substrate processing apparatus that suppress the pattern layer from remaining on the transfer plate during transfer.

1 is a perspective view showing an overall configuration of a transfer apparatus according to a first embodiment of the present invention. Sectional drawing which shows the structure of the porous sheet of this embodiment. The perspective view which shows the structure of the gas ejection roller of this embodiment. The perspective view which shows the internal structure of the gas ejection roller of this embodiment. FIG. 6 is a partial cross-sectional view illustrating an example of a transfer operation according to the present embodiment. FIG. 6 is a partial cross-sectional view illustrating an example of a transfer operation according to the present embodiment. FIG. 6 is a partial cross-sectional view illustrating an example of a transfer operation according to the present embodiment. Sectional drawing which shows the modification of the gas ejection roller in this embodiment. Sectional drawing which shows the modification of the gas ejection roller in this embodiment. The figure which shows the whole structure of the device manufacturing system of 2nd embodiment which concerns on this invention. Sectional drawing which shows the other structure of the porous sheet which concerns on this invention. Sectional drawing explaining transfer of the multistage pattern layer by the porous sheet which concerns on this invention. The figure which shows an example of the circuit formed by the device manufacturing method of 3rd embodiment which concerns on this invention. The figure which shows an example of the circuit formed by the device manufacturing method of 3rd embodiment which concerns on this invention. The figure which shows an example of the circuit formed by the device manufacturing method of 3rd embodiment which concerns on this invention. The figure which shows an example of the circuit formation process by the device manufacturing method of 3rd embodiment which concerns on this invention. The figure which shows an example of the circuit formation process by the device manufacturing method of 3rd embodiment which concerns on this invention. The figure which shows an example of the circuit formation process by the device manufacturing method of 3rd embodiment which concerns on this invention. The figure which shows an example of the circuit formation process by the device manufacturing method of 3rd embodiment which concerns on this invention. The figure which shows an example of the circuit formation process by the device manufacturing method of 3rd embodiment which concerns on this invention. The figure which shows an example of the circuit formation process by the device manufacturing method of 3rd embodiment which concerns on this invention.

[First embodiment]
A first embodiment according to the present invention will be described.
FIG. 1 is a perspective view illustrating a configuration of a transfer apparatus 100 according to the present embodiment.
As shown in FIG. 1, the transfer apparatus 100 uses a porous sheet Ts as a transfer plate formed in an endless belt shape with flexibility and a porous material, and uses an outer peripheral surface Ta of the porous sheet Ts. Is a device for transferring the pattern layer formed on the film-like substrate P as an object to be transferred. The transfer apparatus 100 includes a sheet holding unit (plate holding unit) 10 that holds the porous sheet Ts, a substrate holding unit (target holding unit) 20 that holds the substrate P, and the inner peripheral surface Tb side of the porous sheet Ts. The gas supply part (fluid supply part) 30 which supplies gas toward the outer peripheral surface Ta side is provided. As the substrate P, a resin film such as PET (polyethylene terephthalate) or PEN (polyethylene naphthalate), a plastic sheet, an ultrathin bendable glass plate, a foil sheet obtained by rolling stainless steel into a foil, or a liquid It is possible to use a flexible substrate such as paper or cloth processed so as to suppress the absorption of so-called flexible substrate.
In the present embodiment, a resin film or a plastic sheet is used as the substrate P, particularly paying attention to the low material cost.

Here, prior to the description of each configuration of the transfer apparatus 100, the configuration of the porous sheet Ts used in the present embodiment will be described. FIG. 2 is a cross-sectional view showing the configuration of the porous sheet Ts.
As shown in FIG. 2, the porous sheet Ts includes a porous layer 11, a base metal layer 12 (covering portion), and a plating layer 13 (covering portion).

The porous layer 11 is formed to have a film thickness of, for example, about 20 μm to 50 μm using a porous material such as polyimide. The porous layer 11 can allow gas to pass through. The second surface 11b of the porous layer 11 corresponds to the inner peripheral surface Tb of the porous sheet Ts.
Such a porous polyimide membrane is disclosed, for example, in International Publication No. WO2010 / 038873.

  The base metal layer 12 is formed on the first surface 11a of the porous layer 11 so as to have a predetermined pattern shape. The pattern shape by the base metal layer 12 is complementary to the pattern layer to be transferred to the substrate P. The pattern by the base metal layer 12 is formed, for example, by vapor deposition or the like, and closes a part of the first surface 11a of the porous layer 11.

  The plating layer 13 is laminated on the base metal layer 12 by a plating method. The surface 13a of the plating layer 13 corresponds to the outer peripheral surface (surface layer) Ta of the porous sheet Ts. The plating layer 13 has the same pattern as the base metal layer 12. The plated layer 13 is formed with a desired thickness by, for example, immersing a porous sheet Ts having a patterned base metal layer 12 in a plating solution for a predetermined time and performing electroless or electrolytic plating.

  Thus, the first surface 11 a of the porous layer 11 is partially blocked by the pattern of the base metal layer 12 and the plating layer 13. On the other hand, in the first surface 11 a of the porous layer 11, a pattern by the exposed portion 14 is formed in a region where the base metal layer 12 and the plating layer 13 are not provided. As will be described in detail later, the exposed portion 14 is filled with a material to be transferred that becomes a pattern layer to be transferred to the substrate P.

  Accordingly, the porous sheet Ts functions in the same manner as an intaglio plate in printing because it is transferred by the exposed portion 14 that is recessed with respect to the base metal layer 12 and the plating layer 13.

  When a gas is passed from the second surface 11b of the porous layer 11 to the first surface 11a, the gas is blocked by the base metal layer 12 and the plating layer 13 and ejected from the exposed portion 14 of the first surface 11a.

  This type of porous sheet (resin film, film, etc.) is made by cutting an aramid resin-based porous film with high heat resistance and dimensional stability, and a sintered porous molded body of ultrahigh molecular weight polyethylene powder. An ultra-high molecular weight polyethylene porous film, a tetrafluoroethylene resin porous film excellent in properties such as liquid repellency, heat resistance, and chemical resistance can be used. The surface 11a preferably has a pore size smaller than the minimum dimension of the fine pattern of the base metal layer 12 and good flatness.

  Further, as the porous sheet, a surface fluorinated porous film in which the surface of the porous film made of a synthetic resin is fluorinated by treatment with fluorine gas may be used.

Next, the description of each component of the transfer apparatus 100 will be given.
As illustrated in FIG. 1, the sheet holding unit 10 includes a roller R1 and a roller R2 that convey the porous sheet Ts while applying a predetermined tension to the porous sheet Ts. At least one of the roller R1 and the roller R2 is rotatably provided by a driving unit (not shown). By rotating the roller, the endless porous sheet Ts can be rotated in one direction.

  As shown in FIG. 1, the substrate holding unit 20 includes an impression drum DR that transports the substrate P. The impression drum DR is formed in a shape in which the outer peripheral surface DRa is a cylindrical surface, such as a cylindrical shape or a columnar shape, and the outer periphery is covered with a rubber material or a resin material having an appropriate thickness. The board | substrate P is conveyed in the state wound by outer peripheral surface DRa of the impression drum DR. The impression drum DR is provided so as to be rotatable in the circumferential direction of the outer peripheral surface DRa by a rotation driving unit (not shown). The impression drum DR is provided at a position where the substrate P wound around the outer peripheral surface DRa is in close contact with (or close to) the outer peripheral surface Ta of the porous sheet Ts.

  Further, the tension rollers TR1 and TR2 are arranged so that a certain length of the porous sheet Ts is in close contact with the substrate P wound around the outer peripheral surface DRa of the impression drum DR with respect to the longitudinal direction (feeding direction) of the porous sheet Ts. Provided.

  The gas supply part 30 is arrange | positioned inside the endless belt-like porous sheet Ts. The gas supply unit 30 includes a gas ejection roller ABR that presses the porous sheet Ts against the substrate P and supplies gas to the porous sheet Ts, and a gas supply unit that can supply gas to the gas ejection roller ABR. 35.

FIG. 3 is a perspective view illustrating a configuration of the gas supply unit 30.
As shown in FIG. 3, the gas ejection roller ABR includes a cylindrical shaft (tubular metallic shaft) 31 formed in a cylindrical shape, and bearings arranged one by one at both ends in the axial direction of the cylindrical shaft 31. A cylindrical porous tube 33 that is formed in a cylindrical shape using a porous material and is rotatably supported by the bearing portion 32 outside the cylindrical shaft 31; and an outer peripheral surface of the cylindrical shaft 31; And a magnetic fluid 34 provided between the inner peripheral surface of the porous tube 33.

  The porous tube 33 is formed by, for example, molding a porous ceramic material into a cylindrical shape having a predetermined inner and outer diameter with a thickness of about several millimeters. The porous tube 33 can allow pressurized gas to pass through an infinite number of minute porous (pores) from the inner peripheral surface toward the outer peripheral surface. The average dimension and density of the porous are set according to the minimum dimension (line width or the like) of the pattern shape by the exposed portion 14 formed on the first surface 11a of the porous sheet Ts.

  FIG. 4 is a perspective view showing a state in which the cylindrical porous tube 33 shown in FIG. 3 is removed, and the cylindrical shaft 31 has a hollow portion 31a. The said hollow part 31a is connected to the gas supply part 35 via gas supply paths 35a, such as piping, for example. The cylindrical shaft 31 has an opening 31b (a jet part) penetrating the hollow part 31a and the outside. The opening 31b is formed in a slot shape with a length corresponding to the width of the porous sheet Ts in the direction in which the axis of the cylindrical shaft 31 (or the rotation center line of the porous tube 33) extends, and via the gas supply path 35a. Thus, it becomes a jet outlet for jetting the gas supplied from the gas supply section 35.

  When pressurized gas is ejected from the opening 31 b of the cylindrical shaft 31, the gas passes from the portion of the inner peripheral surface of the porous tube 33 facing the opening 31 b toward the outer peripheral surface of the porous tube 33. . At that time, although the degree varies depending on the thickness of the porous tube 33 and the diameter and density of the porous material, gas is ejected from the outer peripheral surface of the porous tube 33 with a substantially uniform pressure distribution.

  The pressure of the ejected gas is applied to the second surface 11b of the porous sheet Ts, and the pressurized gas that has passed through the porous layer 11 of the porous sheet Ts fills the exposed portion 14 on the first surface 11a side. A force for peeling from the first surface 11a is applied to the pattern layer made of the material to be transferred.

  In FIG. 1, the opening 31b of the cylindrical shaft 31 shown in FIGS. 3 and 4 is directed toward the impression drum DR. Therefore, the pattern layer made of the material to be transferred filled in the exposed portion 14 on the first surface 11a side of the porous sheet Ts is peeled off from the first surface 11a and strongly pressed against the surface of the substrate P to be transferred. .

  At this time, the transfer force (crimping force) for pressing the pattern layer made of the material to be transferred on the porous sheet Ts side against the substrate P is the holding force between the substrate P and the porous sheet Ts by the impression drum DR and the porous tube 33. The back pressure that the ejected gas presses against the second surface 11b side of the porous sheet Ts and the peeling force from the exposed portion 14 of the material to be transferred by the ejected gas are determined.

  In the above configuration, the bearing portion 32 supports the porous tube 33 so as to be rotatable in the circumferential direction of the cylindrical shaft 31. Since the porous tube 33 is formed of a porous material over a circumference of the circumferential direction, the pressurized gas from the opening 31b of the cylindrical shaft 31 can pass over the circumference of the circumference. The second surface 11 b of the porous sheet Ts is in close contact with the outer peripheral surface 33 a of the porous tube 33. The porous tube 33 can be rotated around the cylindrical shaft 31 by the bearing portion 32. For this reason, for example, the porous tube 33 is rotated in accordance with the movement of the porous sheet Ts, or is rotated in accordance with the rotation of the impression drum DR driven by a rotation drive unit (motor or the like). It is possible to

  By the way, the magnetic fluid 34 shown in FIGS. 3 and 4 is filled in a slight gap (for example, 1 to several millimeters) formed between the outer peripheral surface of the cylindrical shaft 31 and the inner peripheral surface of the porous tube 33. However, the main action is to prevent the pressurized gas ejected from the opening 31 b from entering the gap between the outer peripheral surface of the cylindrical shaft 31 and the inner peripheral surface of the porous tube 33. Therefore, the magnetic fluid 34 functions as a seal that enhances the airtightness between the opening 31 b and the inner peripheral surface of the porous tube 33.

  The magnetic fluid 34 is captured by a magnetic generator (permanent magnet, electromagnet, etc.) embedded in the outer peripheral surface of the cylindrical shaft 31. In particular, around the opening 31b on the outer peripheral surface of the cylindrical shaft 31, there is a strong magnetism generator (rare earth permanent magnet) arranged so as to surround the opening 31b so that the magnetic fluid does not fall into the opening 31b. Is provided.

  In addition to the above configuration, as illustrated in FIG. 1, the transfer device 100 includes a pattern layer forming portion PH that forms a pattern layer on the exposed portion 14 formed on the outer peripheral surface Ta of the porous sheet Ts, for example. As the pattern layer forming part PH, functional materials constituting the pattern layer, for example, conductive ink containing nano metal particles, ultraviolet curable resin containing carbon nanowires, organic substances and oxides that crystallize when dried and become semiconductors A print head that prints (fills) a liquid or gel-like functional material such as a solvent on the exposed portion 14 of the porous sheet Ts is used. In the case of the present embodiment, an ink jet head that can drop the functional material with the exposed portion 14 being aimed at is suitable as the print head, but is used in screen printing, gravure printing, letterpress printing, offset printing, and the like. (Lithographic plate or cylinder) can also be used as the head.

  In the present embodiment, as shown in FIG. 2, the base metal layer 12 and the plating layer 13 formed on the outer peripheral surface Ta of the porous sheet Ts serve as a partition layer (convex portion), and the surrounding exposed portion 14 is formed. It becomes a recess. Therefore, after the functional material is uniformly or selectively applied to the region where the exposed portion 14 on the porous sheet Ts is formed as the pattern layer forming portion PH, the base metal layer 12 and the plating layer 13 are used. It may have a coating mechanism that removes the functional material remaining on the partition wall layer and leaves the functional material in the exposed portion 14.

  Note that a plurality of pattern layer forming portions PH may be provided so as to be aligned in the conveyance direction of the porous sheet Ts.

  Further, the transfer device 100 includes a support mechanism PLT that supports an inner peripheral surface Tb of a portion of the porous sheet Ts where a pattern layer (a layer filled in the exposed portion 14) is formed by the pattern layer forming portion PH. As the support mechanism PLT, for example, an air pad type holder that supports the inner peripheral surface Tb in a non-contact manner by a flat support surface, a rotating drum around which a part of the porous sheet Ts is wound, or the like can be used. .

Next, the operation of the transfer apparatus 100 having the above configuration will be described.
First, in the pattern layer forming portion PH, the transfer device 100 has a predetermined relationship with respect to the exposed portion 14 of the porous sheet Ts in a state where the porous sheet Ts is supported by the support mechanism PLT as shown in FIG. A transferred material (liquid or gel functional material) is filled to form the transferred pattern layer 15.

  At that time, the bottom portion of the exposed portion 14 (the first surface 11a of the porous layer 11) filled with the functional material to be the transferred pattern layer 15 has a molecular structure that has liquid repellency with respect to the functional material. That is, it is desirable that the functional material is difficult to enter the porous layer 11 and has poor adhesion. For this purpose, a chemical treatment that modifies the surface of the bottom of the exposed portion 14 (the first surface 11a of the porous layer 11) with a fluorine group, for example, a solution of a SAM (Self Assemble Monolayer) material having liquid repellency. Application may be performed by a mist deposition method or the like so as not to fill the porous layer 11.

  Next, the transfer device 100 rotates the roller R1 and the roller R2 to move the porous sheet Ts, and also rotates the impression drum DR to move the substrate P, thereby moving the first surface of the porous sheet Ts. The transferred pattern layer 15 formed on 11a (Ta) and the transfer target region on the substrate P are brought into contact (pressure bonding). In addition, the pressurized gas is ejected from the opening 31b of the cylindrical shaft 31 constituting the gas ejection roller ABR toward the second surface 11b (Tb) of the porous sheet Ts.

  In this state, as illustrated in FIG. 6, the transfer device 100 supplies gas from the gas ejection roller ABR to the inner peripheral surface Tb of the porous sheet Ts at a predetermined pressure. Since the gas flow supplied from the inner peripheral surface Tb to the inside of the porous layer 11 is blocked in the region where the base metal layer 12 and the plating layer 13 are formed, pressure is applied to the exposed portion 14. . By this pressure (peeling force), the transferred pattern layer 15 formed on the exposed portion 14 is pressed toward the substrate P, and the transferred pattern layer 15 is bonded (transferred) to the substrate P.

  Subsequently, by rotating the roller R1 and the roller R2 and rotating the impression drum DR, the transferred pattern layer 15 arranged on the exposed portion 14 is transferred to the substrate P as shown in FIG. Thus, the porous sheet Ts and the substrate P are conveyed. By repeating this operation, the transferred pattern layer 15 formed on the porous sheet Ts is continuously transferred onto the substrate P.

  In the above embodiment, the surface of the substrate P is modified in advance or a thin film that improves the adhesion is formed in order to improve the adhesion with the functional material constituting the transferred pattern layer 15. It is desirable to keep it.

  Further, in order to satisfactorily peel off the transferred pattern layer 15 from the exposed portion 14, an adjustment mechanism for changing the circumferential width of the opening portion 31b of the cylindrical shaft 31 through which the pressurized gas is jetted is provided, or the opening portion 31b. The opening shape itself may be changed.

  8A and 8B show a modification example as described above. FIG. 8A shows a case where a blade plate 31 w that makes the width in the circumferential direction of the opening variable is provided in the vicinity of the outer periphery of the opening 31 b of the cylindrical shaft 31. The blade plate 31w is configured to be movable in the circumferential direction of the cylindrical shaft 31, and can adjust the circumferential width of the region on the inner circumferential surface of the porous tube 33 to which the pressurized gas is sprayed.

  FIG. 8B shows an example in which the outlets of the pressurized gas formed on the outer peripheral surface of the cylindrical shaft 31 are made into small openings 31h that are discretely arranged in the axial direction instead of being made into a continuous slot shape in the axial direction. . Each of the small openings 31 h communicates with a groove 31 g that extends in the axial direction on the inner peripheral surface of the cylindrical shaft 31. As shown in FIG. 8B, when the jet outlet is constituted by a plurality of small openings 31h, the area of the magnetic fluid 34 surrounding these small openings 31h can be reduced, and there is also an advantage that the magnet generator Mg such as a permanent magnet can be reduced. .

  As shown in FIGS. 8A and 8B, the opening through which the pressurized gas is ejected is narrowed down, and the flow velocity of the gas ejected toward the inner peripheral surface of the porous tube 33 is increased. It is also possible to increase the force for peeling the film from the exposed portion 14.

  Therefore, when transferring the transferred pattern layer 15 of the porous sheet Ts to the substrate P side, a minute gap (for example, several μm to 10 μm) is obtained without bringing the outer peripheral surface Ta of the porous sheet Ts and the surface of the substrate P into close contact. It may be separated with a few μm). Thus, if transfer can be performed in a state where the porous sheet Ts and the substrate P are close to each other without being in close contact, the porous sheet Ts and the substrate P are relatively positioned on the micron order immediately before the transfer. Thus, it becomes possible to align and superimpose a new pattern layer on the pattern layer already formed on the substrate P.

  As described above, the transfer device 100 according to this embodiment includes the porous layer 11 formed of a porous material having a predetermined thickness, and the transferred pattern layer 15 formed on the first surface 11a side of the porous layer 11. The outer peripheral surface of the porous sheet Ts is a sheet holding portion 10 that holds the porous sheet Ts having the substrate P and the substrate P to which the transferred pattern layer 15 of the porous sheet Ts can be transferred (scheduled to be transferred). Since the substrate holding unit 20 that is held in close contact with or close to Ta and the gas supply unit 30 that supplies a gas of a predetermined pressure from the second surface 11b of the porous layer 11 toward the first surface 11a, the porous layer 11 is porous. The transferred pattern layer 15 disposed on the outer peripheral surface Ta of the porous sheet Ts is pushed out to the substrate P by the pressure of the gas supplied through the sheet Ts. Thereby, it can suppress that the pattern layer 15 remains in the porous sheet Ts at the time of transcription | transfer.

[Second Embodiment]
A second embodiment according to the present invention will be described.
FIG. 9 shows an overall configuration of a device manufacturing system (substrate processing apparatus) 1 to which the transfer apparatus 100 of the first embodiment is applied.
As shown in FIG. 9, in the production line of the present embodiment, a pretreatment device U1 that performs a predetermined pretreatment (surface modification or the like) on the long substrate P wound around the supply roller FR1, was pretreated. A transfer device U2 that performs pattern transfer on the substrate P and a post-processing device U3 that performs subsequent processing on the substrate P on which the pattern has been transferred are provided.

  As the transfer device U2, the transfer device 100 of the first embodiment is used. The transfer device U2 forms a pattern for forming a pattern on the surface of the endless belt-like porous sheet Ts in addition to the sheet holding unit 10, the substrate holding unit 20, and the gas supply unit 30 described in the first embodiment. Device 40, cleaning device 50 (maintenance unit) for cleaning porous sheet Ts after the pattern on porous sheet Ts is transferred to substrate P by transfer device U2, and drying device for drying porous sheet Ts after cleaning 60 (maintenance unit), and a substrate processing device 70 (maintenance unit) that performs predetermined substrate processing on the surface of the porous sheet Ts after drying.

  In the pattern forming apparatus 40, the surface of the porous sheet Ts2 subjected to the base treatment (exposed part 14) is patterned with various electrode parts and wiring parts for TFT and organic EL by a printing method or an ink jet method. A plurality of print head parts (print head part PH1, print head part PH2 and print head part PH3) to be applied and formed, and the back surface of porous sheet Ts2 corresponding to each print head part (PH1, PH2, PH3) A support mechanism PLT such as a flat air pad holder to support or a rotating drum around which the porous sheet Ts2 is partially wound is provided.

  The substrate P wound around the supply roller FR1 is sent to the pretreatment device U1 at a predetermined speed in the X direction by the nipped drive roller DR1. The pretreatment device U1 forms a base layer on the surface of the substrate P, that is, a downward surface Pa in the figure, such that pattern transfer (fixing) is strong. The underlayer is formed by irradiating the surface of the substrate P with an energy beam such as an electron beam to form a modified surface layer (an activated surface), and the pattern material to be transferred is firmly attached to the substrate P. It is formed by a method of depositing a thin binder layer to arrive.

  The pre-processed substrate P changes its conveying direction in a non-contact manner by the air turn bar ATB, and in the order of the roller R1, the air turn bar ATB, the impression drum DR, the air turn bar ATB, the roller R2, and the air turn bar ATB in the transfer device U2. It is passed over and transported to the next post-processing device U3.

  The rotation speed and torque of the roller R1 and the roller R2 are controlled so that the substrate P is wound around the impression drum DR while maintaining a predetermined tension in the transport direction. The outer peripheral portion of the impression drum DR is made of metal or hard rubber, and the outer peripheral surface is formed in a cylindrical shape with high roundness.

  Further, in the transfer device U2, a tension roller TR1 and a tension roller TR2 for bringing the patterned porous sheet Ts1 sent from the pattern forming device 40 into close contact with the substrate P wound around the lower side of the impression drum DR. And a gas ejection roller ABR. The tension roller TR1, the tension roller TR2, and the gas ejection roller ABR can all be adjusted in position in the Z direction by an actuator Act.

  As described in the first embodiment, the gas ejection roller ABR is disposed on the back side of the porous sheet Ts1 when the porous sheet Ts1 and the substrate P are in close contact (pressure contact) at the lower portion of the impression drum DR. Squeezed gas is ejected from the surface, and the transferred pattern layer 15 formed on the upper surface of the porous sheet Ts1 is neatly peeled off.

  The porous sheet Ts from which the transferred pattern layer 15 has been peeled off by the transfer device U2 is folded back through the rollers R10 and R11, sent to the wet cleaning tank in the cleaning device 50, and sprayed from a high-pressure cleaning nozzle or the like. The cleaning liquid is then cleaned, and then rinsed with pure water. Thereafter, the porous sheet Ts is sent into the drying device 60 and dried by warm air or infrared irradiation so that moisture taken into the porous material is sufficiently removed.

The dried porous sheet Ts (with the base metal layer 12 and the plating layer 13) is sent to the base processing apparatus 70, and the base preparation necessary for pattern formation is performed again. In the base treatment, a property that the material of the transferred pattern layer 15 formed on the exposed portion 14 is easy to peel without clogging the exposed portion 14 of the porous sheet (while maintaining air permeability), for example, The pattern material has a certain property of having a certain level of liquid repellency. As an example thereof, the SAM material exemplified above may be selectively applied to the exposed portion 14 of the porous sheet.
The porous sheet Ts2 subjected to the base treatment is folded back by the roller R12 and the roller R13 and is sent to the pattern forming apparatus 40 again.

  A tension adjusting mechanism using an air turn bar ATB is provided between the roller R12 and the roller R13, and the tension of the entire endless belt-like porous sheet Ts is adjusted by moving the air turn bar ATB in the X direction by the actuator Act. Is done.

  As described above, the device manufacturing system 1 according to the present embodiment has the substrate holding unit 20 (substrate transfer unit) that transfers the substrate P formed in a band shape and the substrate P transferred by the substrate holding unit 20. A plurality of substrate processing units (a pre-processing device U1, a transfer device U2, and a post-processing device U3) that perform processing, and the transfer device U2 according to the first embodiment of the present invention is used as the transfer device U2. Sometimes, the transferred pattern layer 15 can be prevented from remaining on the porous sheet Ts. Thereby, the device manufacturing system 1 with high processing accuracy and high yield can be obtained.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, in the first embodiment, as the configuration of the porous sheet Ts, the base metal layer 12 is formed on the first surface 11a of the porous layer 11 by the vapor deposition method, and the plating layer 13 is formed thereon. However, the present invention is not limited to this. For example, as shown in FIG. 10, the vapor deposition film 16 may be formed on the first surface 11 a of the porous layer 11, and then the vapor deposition film 16 may be etched to form a pattern by the exposed portion 14. In this case, the surface 16a of the vapor deposition film 16 corresponds to the outer peripheral surface Ta of the porous sheet Ts.

  Moreover, in the said embodiment, although gas was mentioned as an example and demonstrated as a fluid supplied to the porous sheet Ts, it is not restricted to this. For example, when a functional material (ink or the like) having water repellency is filled in the exposed portion 14 of the porous sheet Ts as the transferred pattern layer 15, a liquid such as pure water may be used as the fluid. good.

  Moreover, in the said embodiment, although the structure using the porous sheet Ts was mentioned as an example and demonstrated as a porous board, it is not restricted to this. For example, a pattern layer (a partition layer formed by the base metal layer 12 and the plating layer 13 and the transferred pattern layer 15) is directly formed on the surface of the porous tube 33 of the gas ejection roller ABR shown in FIG. 3, and the porous tube 33 is patterned. A configuration may be adopted in which the layers are brought into direct contact with the substrate P. In this case, the porous tube 33 is formed of a flexible thin plate-like porous plate that can be bent with a predetermined curvature, and the other surface of the thin plate-like porous plate is on the inner surface of the cylindrical shaft 31. It is provided in a rolled state.

  Moreover, in the said embodiment, although demonstrated taking the example of the structure by which the porous material was provided in the whole surface of the porous sheet Ts, it is not restricted to this, It is porous only in the area | region in which a pattern layer is formed. A configuration in which a quality material is disposed may be employed.

  Moreover, in the said embodiment, although demonstrated taking the example of the structure which supplies gas from the gas ejection roller ABR to the porous sheet Ts, in addition to this, the gas ejection roller ABR can attract | suck the porous sheet Ts. It is good also as a structure further provided with a suction part. Specifically, when the configuration shown in FIG. 3 is described as an example, a configuration in which a vacuum pump or the like is connected to the hollow portion 31a of the cylindrical shaft 31 may be mentioned.

  By the way, in the above embodiment, the case where the one-step pattern layer 15 is transferred onto the substrate P is exemplified, but as shown in FIG. 11, two or more steps of the pattern layer 15A can be formed.

  In FIG. 11, on the porous layer 11 of the porous sheet Ts, for example, a first pattern made of a film of metal, oxide, nitride, or the like using an overlay exposure technique such as photolithography and a photoetching technique. A layer 16M is formed, and a second pattern layer 16N is stacked thereon.

  When a functional material that becomes the transferred pattern layer 15 is applied or vapor-deposited on the exposed portion 14 of the porous sheet Ts and transferred to the substrate P side, a pattern layer 15A having a multistage structure can be formed. it can.

  The multi-layer pattern layers 16N and 16M formed in close contact with the porous layer 11 of the porous sheet Ts are formed by depositing the same material layer thickly and uniformly, and then depositing the deposited layer as the first layer of the porous layer 11. The first etching is performed by applying the first mask for removing the surface 11a, and then the second etching is performed by applying the second mask for removing as the second step. May be.

[Third embodiment]
Next, a third embodiment according to the present invention will be described with reference to FIGS. In the present embodiment, as an example, a pixel circuit portion of an active matrix type organic EL (AMOLED) display is a manufacturing object, and a formation method thereof will be described. The pixel circuit portion of the AMOLED display has a circuit configuration as shown in FIG. 12A, for example, and a video signal bus line Sy to which a signal corresponding to the luminance of the video signal is supplied, and a scanning signal for selecting a horizontal scanning line (synchronization). A scanning bus line Sh supplied with a clock), a power supply bus line Vdd that supplies a positive power supply voltage to the pixel circuit portion, and a power supply bus line Vss that supplies a negative power supply voltage (or ground potential).

  Each pixel (RGB sub-pixel) is supplied with a first thin film transistor TR1 (hereinafter referred to as TFT-TR1) that switches On / Off of the light emitting layer OLED, and a current corresponding to the luminance of the video signal to the light emitting layer OLED. At least two second thin film transistors TR2 (hereinafter referred to as TFT-TR2) to be supplied are provided. The source electrode S of the TFT-TR1 is connected to the video signal bus line Sy, and the gate electrode G of the TFT-TR1 is connected to the scanning bus line Sh. Further, the gate electrode G of the TFT-TR2 is connected to the drain electrode D of the TFT-TR1, the drain electrode D of the TFT-TR2 is connected to the power supply bus line Vdd, and the source electrode S of the TFT-TR2 is the anode of the light emitting layer OLED. Connected to the side. The cathode side of the light emitting layer OLED is connected to the power supply bus line Vss, and the light emission time of the light emitting layer OLED is held between the gate electrode G of the TFT-TR2 (drain electrode D of TFT-TR1) and the power supply bus line Vss. For this purpose, a capacitor CP is connected.

  FIG. 12B shows an example of a planar arrangement in the case where the circuit configuration as shown in FIG. 12A is formed on the substrate P described in the previous embodiments. A round insulating layer Iso is sandwiched between intersections of the video signal bus line Sy, the scanning bus line Sh, and the power supply bus line Vdd (Vss). The semiconductor layer Sc constituting the TFT-TR1 and TFT-TR2 is formed on the lowermost side (substrate P side) in this embodiment, and the drain electrode D and the source electrode S are formed thereon, and the gate insulation is formed thereon. An insulating layer Iso that becomes a film is formed, and a gate electrode G is further formed thereon. FIG. 12C shows a cross-sectional structure taken along line C-C ′ in FIG. 12B across the drain electrode D and the source electrode S of the TFT-TR1 and across the drain electrode D of the TFT-TR2.

  As shown in FIG. 12C, an insulating support layer MR that integrally supports the semiconductor layer Sc, the drain electrode D, and the source electrode S of each TFT is formed on the surface of the substrate P, and on the support layer MR. The insulating layer Iso as the gate insulating film, the gate electrode G, or some bus lines are stacked. In this embodiment, the transfer method using the porous sheet Ts described in the second embodiment and the like can be applied by interposing such a support layer MR.

  FIG. 13A shows a state in which the support layer MR is formed on the porous sheet Ts as shown in FIG. 5 or FIG. 10 and transferred (bonded) to the substrate P. The support layer MR has an appropriate planar dimension (for example, 50 μm × 25 μm) including the source electrode S, the drain electrode D, and the semiconductor layer Sc, which are the main parts of the TFT-TR1 and TFT-TR2, and the porous sheet Ts. The porous layer 11 is formed in the exposed portion 14 (see FIG. 5 or 10) where the porous layer 11 is exposed. Further, the thickness of the support layer MR including the source electrode S, the drain electrode D, and the semiconductor layer Sc is about the total thickness of the base metal layer 12 and the plating layer 13 laminated on the upper surface (11a) of the porous layer 11 ( Hundreds of nanometers to several micrometers).

  As shown in FIGS. 13B and 13C, the support layer MR as shown in FIG. 13A is first formed on the first surface 11a of the porous layer 11 in the exposed portion 14 of the porous sheet Ts as a first step. A source electrode S and a drain electrode D of each TFT are formed of a resistance material (metal film, carbon nanotube, etc.). FIG. 13B is a partial cross-sectional view of the porous sheet Ts including the exposed portion 14, and FIG. 13C is a plan view of the exposed portion 14. The width of the gap Gp opposed to the source electrode S and the drain electrode D is also called a channel length, and is precisely processed in order to keep various characteristics of the TFT within a desired range.

  As a method of precisely positioning and forming the source electrode S and the drain electrode D on the surface 11a of the porous layer 11 in the exposed portion 14 (a window-shaped region surrounded by the partition wall by the plating layer 13), a photoresist is used. Lithography method (including exposure process using energy rays, development process, etching process), photo using photosensitive functional material that changes surface lyophilicity and liquid repellency by UV irradiation instead of photoresist An assist method (such as electroless plating that does not require development and etching) or a printing method in which each electrode is directly drawn with ink containing conductive nanoparticles using an ink jet printer can be used. In order to accurately manage the width of the gap Gp from the patterning stage, a lithography method or a photo assist method is suitable. However, for example, after forming the electrode as one linear (rectangular) pattern in which the source electrode S and the drain electrode D are connected on the surface 11 a of the porous layer 11, a portion corresponding to the gap Gp is applied to the laser beam. If a process of cutting (cutting) with a spot can be used, the gap Gp can be formed with sufficient accuracy even by a printing method.

  When the source electrode S and the drain electrode D are formed as shown in FIGS. 13B and 13C, the adhesion between the electrodes S and D and the surface 11a of the porous layer 11 is neither excessively increased nor excessively decreased. As described above, the material of the porous layer 11 and the average porous size of the surface 11a are selected, and the surface 11a is pretreated (activated by UV irradiation or the like) as necessary.

  Next, as a second stage, as shown in FIGS. 14A and 14B, a solution-like semiconductor material (organic semiconductor, oxide semiconductor) is formed so as to cover the gap Gp between the source electrode S and the drain electrode D of each TFT. , Carbon nanotubes, etc.) are applied, and the semiconductor layer Sc is formed by an appropriate crystal orientation treatment. FIG. 14A is a plan view of the exposed portion 14, and FIG. 14B is a partial cross-sectional view of the porous sheet Ts including the exposed portion 14. The semiconductor layer Sc may be formed in a range that reliably covers the gap Gp, and it is preferable to use a printing method using an inkjet printer or the like in terms of accuracy.

  In general, when a semiconductor layer is formed by dropping or coating a solution-like semiconductor material, a certain high temperature is required for crystallization. For example, when a flexible substrate made of a PET resin is used as the substrate P, its glass transition temperature is about 100 °, and extreme deformation (shrinkage) occurs when a temperature higher than that is applied. In this embodiment, as an example, by using a porous film made of polyimide as the porous layer 11, a high temperature treatment of about 200 ° to 250 ° becomes possible. As shown in FIGS. 14A and 14B, at the stage where the semiconductor layer Sc is applied with inkjet droplets, the porous sheet Ts has a metal layer 12, a plating layer (metal) 13, and metal-based electrodes S and D. Therefore, the droplets of the semiconductor layer Sc can be crystallized (oriented) at a high temperature of about 200 ° to 250 °, and an improvement in TFT performance can be expected. Moreover, the choice of the material which can be utilized as the semiconductor layer Sc also spreads. If the material of the porous layer 11 is ceramic instead of polyimide, a higher temperature treatment is possible.

  Next, as a third step, an insulating solution material that becomes the support layer MR is formed on the entire exposed portion 14 (concave portion) where the source electrode S, the drain electrode D, and the semiconductor layer Sc are formed as shown in FIGS. 14A and 14B. For example, an ultraviolet curable resin or the like is applied with a uniform thickness. An ink jet printer can also be used for this application. If only the surface of the plating layer 13 around the exposed portion 14 can be set in a highly liquid repellent state, an insulating solution material is filled in the exposed portion 14 by a mist deposition method or a dip method. May be. When the material of the support layer MR is an ultraviolet curable resin, thereafter, the porous sheet Ts is irradiated with ultraviolet rays and cured to an appropriate hardness. In the case of other solution materials, the solvent component in the solution material is removed and cured appropriately by irradiation with infrared rays or microwaves or heating with a heater.

  Since the support layer MR is formed on the porous sheet Ts in the state shown in FIG. 13A by the first to third stages, as described in the previous embodiments, the porous sheet Ts. A pressurized gas may be supplied to the back surface 11b side of the substrate, and the support layer MR may be transferred (pressed) to a predetermined position on the substrate P.

  When the support layer MR is transferred onto the substrate P, the source electrode S and the drain electrode D are exposed on the upper surface of the support layer MR, as is apparent from the cross-sectional structure of FIG. 12C. Therefore, when various bus lines Sy, Sh, Vdd, and gate electrodes G are laminated on the source electrode S and the drain electrode D by a conductive ink by a printing method such as inkjet, electrical continuity is ensured. Will be.

  In the case of the pixel circuit as shown in FIGS. 12B and 12C, the support layer MR on the substrate P is covered with the semiconductor layer Sc and has dimensions (area) that do not cover the ends of the source electrode S and the drain electrode D. Then, an insulating layer Iso that becomes a gate insulating film is formed. This insulating layer Iso is applied with a liquid-repellent photosensitive functional material on the support layer MR, and the portion corresponding to the insulating layer Iso is modified to be lyophilic with a photo assist method in which the portion corresponding to the insulating layer Iso is modified to be lyophilic. It is formed by a combination of a printing method such as an ink jet method, a mist deposition method, or a dip (immersion) method in which a solution material to be the insulating layer Iso is applied to the finished portion.

  After the formation of the insulating layer Iso that becomes the gate insulating film, the gate electrode G and various bus lines Sy, Sh, Vdd, and Vss are printed on the upper surface of the insulating layer Iso, the support layer MR, or the surface of the substrate P by a printing method such as inkjet. It is formed by an electroless plating method using a photo assist method. When a liquid-repellent photosensitive functional material is applied to the surface of the support layer MR in the step of forming the insulating layer Iso, the conductive ink that becomes the gate electrode G of the TFT-TR2 as shown in FIG. 12C. The surface of the end portion of the drain electrode D of the TFT-TR1 to be stacked has high liquid repellency (due to fluorine molecules). Therefore, the surface of the support layer MR and the substrate P is irradiated with ultraviolet rays corresponding to the pattern shapes of the gate electrode G and various bus lines Sy, Sh, Vdd, and Vss to change the liquid repellency of the portion to lyophilic. Keep it quality.

  In the case of this embodiment, as shown in FIG. 12B, the bus line Vdd is positioned at the lowest layer, the bus line Sy is positioned above it, and the bus line Sh is positioned above it. ing. Therefore, after the formation of the insulating layer Iso that becomes the gate insulating film, the conductive wire portion formed first by the conductive ink becomes the gate electrode G and the bus line Vdd of the TFT-TR2. Therefore, the surfaces of the support layer MR and the substrate P are modified to be lyophilic by irradiating ultraviolet rays in a shape corresponding to the gate electrode G of the TFT-TR2 and the bus line Vdd. When the amine group having plating reducing ability is exposed only on the surface portion modified (excluded by fluorine molecules) by the ultraviolet irradiation, the substrate P is immersed in the electroless plating solution after the ultraviolet irradiation, so that the TFT A wiring corresponding to the gate electrode G of -TR2 and the bus line Vdd is formed. Thereby, the drain electrode D of the TFT-TR1 is electrically connected to the gate electrode G of the TFT-TR2, and the drain electrode D of the TFT-TR2 is electrically connected to the bus line Vdd.

  Next, an insulating layer Iso is formed on the bus line Vdd at the intersection of the bus line Sy and the bus line Sh. This can also be performed by a wet process using only a printing method such as inkjet or a combination of a photo assist method and a printing method. Thereafter, the bus line Sy is formed by an electroless plating method or the like by a printing method or photo assist. As a result, the source electrode S of the TFT-TR1 is electrically connected to the bus line Sy. Next, an insulating layer Iso is formed on the bus line Sy at the intersection with the bus line Sh, and then the bus line Sh and the gate electrode G of the TFT-TR1 are electrolessly plated by a printing method or photo assist. Etc. are formed.

  As described above, in the present embodiment, the stacked structure of the source electrode S, the drain electrode D, and the semiconductor layer Sc constituting the TFT is integrally formed on the porous sheet Ts. The temperature conditions for crystallization can be relaxed and the temperature can be increased, and the performance (electron mobility, On / Off ratio, etc.) of the TFT can be improved while being a wet process.

  As shown in FIG. 12C, the source electrode S and the drain electrode D exposed on the surface of the support layer MR have a level difference corresponding to the thickness of the support layer MR with respect to the surface of the substrate P. Therefore, the various bus lines Sy, Sh, Vdd (Vss) located on both the surface of the substrate P and the surface of the support layer MR are formed so as to straddle the stepped portion around the support layer MR. When the stepped portion around the support layer MR is nearly vertical, various bus lines Sy, Sh, Vdd (Vss) straddling the stepped portion are not formed well and are easily disconnected.

  Therefore, as shown in FIG. 14B, the edge (side surface of the partition wall) of the exposed portion 14 formed on the porous sheet Ts spreads outward when viewed from the inside of the exposed portion 14 (window shape). The tapered portion SL is used. Thus, as shown in FIG. 14C, the edge portion SL ′ around the support layer MR transferred onto the substrate P is inclined toward the inside of the support layer MR, and the inclined edge portion SL is inclined. Disconnection of various bus lines Sy, Sh, and Vdd (Vss) straddling 'is suppressed.

In this embodiment, the TFT is configured as a top gate type. However, even in the case of a bottom gate type TFT, the electrodes (source and drain) constituting the TFT are similarly formed in the exposed portion 14 of the porous sheet Ts. D) and a laminated structure of a semiconductor layer, a laminated structure of a semiconductor layer and an insulating layer, or a laminated structure of an electrode (gate G) and an insulating layer can be integrally formed and transferred to the substrate P side.
In general, a TFT is a stack of a first electrode layer serving as a source and a drain facing each other with a gap Gp (channel length), a semiconductor layer, a gate insulating layer, and a second electrode layer serving as a gate covering the gap Gp. Consists of structures. In this embodiment, among these layers, two layers of the first electrode layer (the source electrode S and the drain electrode D) and the semiconductor layer (Sc) are used as a laminated structure together with the support layer MR, and the porous sheet Ts. Although formed in the exposed portion 14, a three-layer structure including the first electrode layer, the semiconductor layer, and the gate insulating layer (Iso) may be formed together with the support layer MR. In that case, a gate insulating layer (Iso) is first formed only in a part of the exposed portion 14 of the porous sheet Ts, and over the first surface 11 a of the porous layer 11 in the exposed portion 14. The first electrode layer (source electrode S and drain electrode D) is formed, and further the semiconductor layer (Sc) is formed on the inner side of the gate insulating layer (Iso). In the case of a bottom gate type TFT, a semiconductor layer (Sc) is first formed on the first surface 11a in the exposed portion 14 of the porous sheet Ts, and after crystallization by heating or the like, A two-layer structure in which the gate insulating layer (Iso) is formed thereover so as to cover the semiconductor layer can be obtained. In this case, the gate electrode G is formed in advance at a predetermined position on the substrate P, and the stacked structure of the gate insulating layer and the semiconductor layer is transferred onto the gate electrode G together with the support layer MR. Thus, by providing the support layer MR, at least two of the electrode layer, the semiconductor layer, and the insulating layer constituting the thin film transistor (TFT) are formed in advance on the porous sheet Ts as a laminated structure, Good transfer to the substrate P is possible.

  The porous sheet Ts used in each of the above embodiments may have a structure in which two types of porous films having different average pore diameters, film thicknesses, or porosity are laminated. For example, a first porous layer having an average pore diameter of 5 μm or less and a thin film thickness (for example, 20 μm) is provided on the surface side of the porous sheet Ts on which structures such as TFTs and wiring layers are formed, and the porous sheet Ts A multilayer structure in which a second porous layer having an average pore diameter of 10 μm or more and a relatively thick film thickness (for example, 100 μm) is provided on the back surface side of the substrate.

  U2, 100: Transfer device 1 ... Device manufacturing system Ts ... Porous sheet Ta ... Outer peripheral surface Tb ... Inner peripheral surface P ... Substrate DR ... Impression drum ABR ... Gas ejection roller PH ... Pattern layer forming part PLT ... Support mechanism 10 ... Sheet holding part 11 ... Porous layer 11a ... First side 11b ... Second side 12 ... Underlying metal layer 13 ... Plating layer 13a ... Surface 14 ... Exposed part 15 ... Transfer pattern layer 16 ... Deposition film 16a ... Surface 20 ... Substrate Holding unit 30 ... Gas supply unit 31 ... Cylindrical shaft 31a ... Hollow portion 31b ... Opening 33 ... Porous tube 35 ... Gas supply unit 40 ... Pattern forming device 50 ... Cleaning device 60 ... Drying device

Claims (4)

A method of manufacturing an electronic device comprising a thin film transistor on a flexible substrate, comprising:
A laminated structure of any two layers of an electrode layer, a semiconductor layer, and an insulating layer constituting the thin film transistor is formed on one surface side of a porous plate formed of a porous material having a predetermined thickness. 1 process,
In a state where the one surface side of the porous plate on which the laminated structure is formed and the surface of the substrate are in close contact or close to each other, the ejection portion disposed on the other surface side of the porous plate While supplying a fluid having a predetermined pressure toward the one surface side of the porous plate, the porous plate and the porous plate are arranged so that the ejection portion relatively moves along the other surface of the porous plate. A second step of transferring at least one of the ejection portions and transferring the laminated structure on the porous plate to the surface of the substrate;
A third step of forming a remaining layer constituting the thin film transistor or a wiring layer connected to the electrode on the surface of the multilayer structure transferred to the surface of the substrate or on the surface of the substrate;
A device manufacturing method including: The device manufacturing method according to claim 1,
The stacked structure includes source and drain electrode layers of the thin film transistor and a semiconductor layer.
Device manufacturing method. A device manufacturing method according to claim 2,
The first step includes
A first step of forming the source and drain electrode layers on one side of the porous plate;
A second step of laminating the semiconductor layer in a range that covers the gap between the source and drain;
Forming a support layer surrounding the source and drain electrode layers and the semiconductor layer with a predetermined size on one side of the porous plate;
including,
Device manufacturing method. The device manufacturing method according to claim 3,
In the second step, the laminated structure of the electrode layer and the semiconductor layer formed on one surface side of the porous plate is transferred to the surface of the substrate together with the support layer.
Device manufacturing method.

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