CN104427781B - The manufacturing method of resin mask layer detergent composition and circuit substrate - Google Patents
The manufacturing method of resin mask layer detergent composition and circuit substrate Download PDFInfo
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- CN104427781B CN104427781B CN201410458834.7A CN201410458834A CN104427781B CN 104427781 B CN104427781 B CN 104427781B CN 201410458834 A CN201410458834 A CN 201410458834A CN 104427781 B CN104427781 B CN 104427781B
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- 239000000203 mixture Substances 0.000 title claims abstract description 156
- 239000003599 detergent Substances 0.000 title claims abstract description 147
- 239000000758 substrate Substances 0.000 title claims abstract description 139
- 229920005989 resin Polymers 0.000 title claims abstract description 116
- 239000011347 resin Substances 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 71
- 239000004615 ingredient Substances 0.000 claims abstract description 160
- 229910000679 solder Inorganic materials 0.000 claims abstract description 112
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 35
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 34
- 239000002253 acid Substances 0.000 claims abstract description 24
- 150000003863 ammonium salts Chemical class 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 213
- 230000008569 process Effects 0.000 claims description 183
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 68
- 229910052799 carbon Inorganic materials 0.000 claims description 68
- 238000005406 washing Methods 0.000 claims description 49
- 150000001412 amines Chemical class 0.000 claims description 47
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 45
- 125000000217 alkyl group Chemical group 0.000 claims description 40
- -1 that is Chemical compound 0.000 claims description 38
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 18
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 14
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 13
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- 125000004103 aminoalkyl group Chemical group 0.000 claims description 9
- 238000011049 filling Methods 0.000 claims description 7
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 4
- 125000005529 alkyleneoxy group Chemical group 0.000 claims description 3
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 2
- 239000004254 Ammonium phosphate Substances 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- 239000001099 ammonium carbonate Substances 0.000 claims description 2
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 2
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 2
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims description 2
- 235000019289 ammonium phosphates Nutrition 0.000 claims description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 2
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 2
- NHJPVZLSLOHJDM-UHFFFAOYSA-N azane;butanedioic acid Chemical compound [NH4+].[NH4+].[O-]C(=O)CCC([O-])=O NHJPVZLSLOHJDM-UHFFFAOYSA-N 0.000 claims description 2
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 21
- 230000007797 corrosion Effects 0.000 abstract description 21
- 230000005764 inhibitory process Effects 0.000 abstract description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 67
- 238000012360 testing method Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 17
- 230000002401 inhibitory effect Effects 0.000 description 16
- 239000002585 base Substances 0.000 description 15
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 12
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 238000001035 drying Methods 0.000 description 10
- 238000001802 infusion Methods 0.000 description 10
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 8
- 238000007598 dipping method Methods 0.000 description 8
- 238000005476 soldering Methods 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- SZNYYWIUQFZLLT-UHFFFAOYSA-N 2-methyl-1-(2-methylpropoxy)propane Chemical compound CC(C)COCC(C)C SZNYYWIUQFZLLT-UHFFFAOYSA-N 0.000 description 4
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 4
- 239000012752 auxiliary agent Substances 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 238000005342 ion exchange Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- UDGSVBYJWHOHNN-UHFFFAOYSA-N n',n'-diethylethane-1,2-diamine Chemical compound CCN(CC)CCN UDGSVBYJWHOHNN-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 description 4
- 238000004904 shortening Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 4
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 229940035423 ethyl ether Drugs 0.000 description 3
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000000399 optical microscopy Methods 0.000 description 3
- DJFBJKSMACBYBD-UHFFFAOYSA-N phosphane;hydrate Chemical group O.P DJFBJKSMACBYBD-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- LJDSTRZHPWMDPG-UHFFFAOYSA-N 2-(butylamino)ethanol Chemical compound CCCCNCCO LJDSTRZHPWMDPG-UHFFFAOYSA-N 0.000 description 2
- IUXYVKZUDNLISR-UHFFFAOYSA-N 2-(tert-butylamino)ethanol Chemical compound CC(C)(C)NCCO IUXYVKZUDNLISR-UHFFFAOYSA-N 0.000 description 2
- JZQLRTAGAUZWRH-UHFFFAOYSA-N 2-aminoethanol;hydrate Chemical compound [OH-].[NH3+]CCO JZQLRTAGAUZWRH-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000003973 alkyl amines Chemical class 0.000 description 2
- 125000005210 alkyl ammonium group Chemical group 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 125000003368 amide group Chemical group 0.000 description 2
- 150000008378 aryl ethers Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 2
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- YOMFVLRTMZWACQ-UHFFFAOYSA-N ethyltrimethylammonium Chemical compound CC[N+](C)(C)C YOMFVLRTMZWACQ-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- SDPBQTFSSSPDBS-UHFFFAOYSA-N pentan-1-amine;hydrate Chemical compound [OH-].CCCCC[NH3+] SDPBQTFSSSPDBS-UHFFFAOYSA-N 0.000 description 2
- DPBLXKKOBLCELK-UHFFFAOYSA-O pentylazanium Chemical compound CCCCC[NH3+] DPBLXKKOBLCELK-UHFFFAOYSA-O 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 150000000177 1,2,3-triazoles Chemical class 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical class CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- HXQHRUJXQJEGER-UHFFFAOYSA-N 1-methylbenzotriazole Chemical compound C1=CC=C2N(C)N=NC2=C1 HXQHRUJXQJEGER-UHFFFAOYSA-N 0.000 description 1
- IWSZDQRGNFLMJS-UHFFFAOYSA-N 2-(dibutylamino)ethanol Chemical compound CCCCN(CCO)CCCC IWSZDQRGNFLMJS-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- MTJGVAJYTOXFJH-UHFFFAOYSA-N 3-aminonaphthalene-1,5-disulfonic acid Chemical compound C1=CC=C(S(O)(=O)=O)C2=CC(N)=CC(S(O)(=O)=O)=C21 MTJGVAJYTOXFJH-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
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- 238000004364 calculation method Methods 0.000 description 1
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- OGFYIDCVDSATDC-UHFFFAOYSA-N silver silver Chemical compound [Ag].[Ag] OGFYIDCVDSATDC-UHFFFAOYSA-N 0.000 description 1
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- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- DTIFFPXSSXFQCJ-UHFFFAOYSA-N tetrahexylazanium Chemical compound CCCCCC[N+](CCCCCC)(CCCCCC)CCCCCC DTIFFPXSSXFQCJ-UHFFFAOYSA-N 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/645—Mixtures of compounds all of which are cationic
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The residual that the present invention provides resin mask layer (resin film) reduces the manufacturing method of the resin mask layer detergent composition being improved with the inhibition of solder corrosion and the circuit substrate for having used the composition.In a kind of mode, the resin mask layer detergent composition of manufacture for circuit substrate is in 100 mass parts of detergent composition, containing more than 0.5 mass parts of quaternary ammonium hydroxide (ingredient A) and 3.0 below the mass, pacify (ingredient B) 3.0 mass parts or more and 14.0 below the mass containing water solubility, containing more than acid or its 0.3 mass parts of ammonium salt (ingredient C) and 2.5 below the mass, containing more than 50.0 mass parts of water (ingredient D) and 95.0 below the mass.
Description
Technical field
The present invention relates to the manufacturing methods of resin mask layer detergent composition and circuit substrate.
Background technique
In recent years, the requirement of the installation about electronic component to printed wiring board or ceramic substrate, densification exists
Increase year by year, as the mode for meeting the requirement, bare die (bare chip) mounting means is of concern.In bare die installation side
In formula, exist instead of realizing that chip is installed with the previous face-up being electrically connected that substrate is routed by wire bonding, and it is wide
The general tendency using the face-down realized by metal coupling installation.Face-down is carried out according to by metal coupling
The i.e. so-called metal coupling method of installation can be expected to form low resistance connection between electronic component.
In patent document 1, as the stripper of photoresist, disclose by containing specific quaternary ammonium hydroxide, water-soluble
Property amine and hydroxyl amine aqueous solution formed stripper.
In patent document 2, disclose that can to wash the solder auxiliary agent containing benzylalcohol, amine compounds and water and dry film simultaneously anti-
Lose the dual-purpose detergent of agent.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2002-62668 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2007-224165 bulletin
Summary of the invention
Problems to be solved by the invention
In metal coupling method, be desirable to convex block formed and the removing of the resins mask layers (resin film) such as the dry film that uses
Rate is improved.This is because if being difficult to carry out good electronics in substrate surface remaining resin mask layer (resin film)
Component installation.
If heating the circuit substrate with resin mask layer for convex block formation, resin mask layer occurs because of heat
Molecular weight.The detergent of the photoresist (resin mask layer) of patent document 1 exists for the tree after molecular weight
The insufficient situation of the washing performance of rouge mask layer.In addition, insufficient for the anticorrosion of solder.In patent document 2, it is expected that
The washing performance of solder auxiliary agent and dry film photoresist further increases.
Therefore, in a scheme of the invention, provide it is a kind of it is heat-treated after resin mask layer (resin film) it is residual
The resin mask layer detergent composition that the inhibition for staying reduction and solder to corrode is improved.
Means for solving the problems
In a scheme of the invention, it is related to a kind of resin mask layer detergent composition, the resin mask layer is with washing
Agent composition is washed in 100 mass parts of detergent composition, contains 0.5 matter of quaternary ammonium hydroxide (ingredient A) shown in following formula (I)s
Part or more and 3.0 below the mass is measured, containing more than 3.0 mass parts of water-soluble amine (ingredient B) and 10.0 below the mass, is contained
More than acid or its 0.3 mass parts of ammonium salt (ingredient C) and 2.5 below the mass, containing more than 50.0 mass parts of water (ingredient D) and
95.0 below the mass.
(in formula, R1、R2、R3It is respectively identical or different, it is the alkyl of carbon number 1~4, R4For the alkyl or carbon number of carbon number 1~4
1~4 hydroxyl substituted alkyl group.)
In another scheme of the invention, be related to include following processes (1)~(5) circuit substrate manufacturing method.
Process (1): in the process that the substrate surface for being provided with weld part forms resin mask layer.
Process (2): the process of opening portion is formed in a manner of exposing the weld part in the resin mask layer.
Process (3): in the process of opening portion filling solder projection forming material.
Process (4): heating melts the solder projection forming material, and solder projection is thus made to be fixed on the weld part
Fixed process.
Process (5): using resin mask layer detergent composition of the present invention to substrate obtained in process (4)
The process washed.
The effect of invention
The manufacturing method of resin mask layer detergent composition and circuit substrate according to the present invention, using dry
The resins such as film mask layer (resin film) is when the weld part (for example, electrode etc.) of circuit substrate is fixed by solder projection, Ke Yijian
The inhibition of the promotion of the removing of resin mask layer (resin film) after caring for the heat treatment (reflow) of solder projection and solder corrosion,
And can be realized can make solder connection reliability improve such effect.
Detailed description of the invention
Fig. 1 is the outline process for indicating one or more embodiments of manufacturing method of circuit substrate of the present invention
Explanatory diagram.
Fig. 2 is using FE-SEM to the base that will be equipped with solder in the detergent composition of embodiment 10 and comparative example 1
Plate impregnates the solder surface of 20 minutes front and backs in 50 DEG C to observe an example for having free from corrosion photo.
Specific embodiment
A scheme of the invention is completed based on following opinion, that is, is being formed using resin mask means in weld part
After solder projection, when being removed to heat-treated resin mask layer, by using containing quaternary ammonium hydroxide (ingredient A),
The detergent composition of water-soluble amine (ingredient B), acid or its ammonium salt (ingredient C) and water (ingredient D) can be removed effectively because adding
Heat becomes difficult to the resin mask layer of removing, and then is able to suppress solder corrosion, and thus, it is possible to improve solder connection reliability.
That is, a scheme of the invention is related to a kind of resin mask layer detergent composition (hereinafter also referred to " present invention
The detergent composition "), which contains in 100 mass parts of detergent composition
More than 0.5 mass parts of quaternary ammonium hydroxide (ingredient A) shown in following formula (I)s and 3 below the mass, contain water-soluble amine (ingredient
B) more than 3 mass parts and 10 below the mass, containing it is more than acid or its 0.3 mass parts of ammonium salt (ingredient C) and 2.5 mass parts with
Under, containing more than 50 mass parts of water (ingredient D) and 95 below the mass.
(in formula, R1、R2、R3It is respectively identical or different, it is the alkyl of carbon number 1~4, R4For the alkyl or carbon number of carbon number 1~4
1~4 hydroxyl substituted alkyl group.)
In detergent composition of the present invention, although improving the mechanism of action of the removability of resin mask layer not
It is clear, but it is speculated as following mechanism.It is believed that: for quaternary ammonium hydroxide (ingredient A) and water-soluble amine (ingredient B), utilize
Alkali composition has occurred the resin of molecular weight and covers to cut off due to the sour component contained in soldering paste, the solder flux auxiliary component or heating
Mould (etchant resist), thus carries out low molecule quantization.In addition, it is believed that water-soluble amine (ingredient B) and water (ingredient D) are impregnated in low point
In etchant resist after son quantization, removing can be dissolved.Although in addition, deducing tin (Sn) dissolution of the main component as solder
Dissolution is inhibited to react in strong alkali aqueous solution, but because of acid or its ammonium salt (ingredient C).
(ingredient A)
Ingredient A, that is, quaternary phosphonium hydroxides in one or more embodiments, as detergent composition of the present invention
Ammonium can exemplify the salt etc. formed by cation and hydroxide.In addition, in one or more embodiments, as cation,
Tetramethyl amine, tetraethyl ammonium, four (n- or i-) propyl ammoniums, four (n- or i-) butyl ammoniums, four pentyl ammonium, four hexyls can be enumerated
The tetraalkylammonium cations such as ammonium, trimethylethyl ammonium (carbon number of alkyl is 1~6), in addition, trimethyl (2- hydroxyl can be enumerated
Ethyl) alkyl ammonium cation (carbon number of alkyl is 1~6) with hydroxy alkyl such as ammonium and triethyl group (2- hydroxyethyl) ammonium.
Wherein, from the viewpoint of improving resin mask layer removability and inhibiting the corrosion of solder, preferably tetramethyl-ammonium.As hydrogen-oxygen
Change quaternary ammonium, specifically, tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydrogen can be enumerated
Amine-oxides, four pentyl ammonium hydroxide, four hexyl ammonium hydroxide ammonium, trimethylethyl ammonium hydroxide, trimethyl (2- hydroxyethyl)
Ammonium hydroxide, triethyl group (2- hydroxyethyl) ammonium hydroxide etc..Wherein, rotten from raising resin mask layer removability and inhibition solder
From the perspective of erosion, preferred tetramethylammonium hydroxide.In one or more embodiments, detergent combination of the present invention
Object contains one or more ingredient A.
About ingredient A, that is, quaternary ammonium hydroxide content in detergent composition of the present invention, combined in detergent
It is 0.5 mass parts or more in 100 mass parts of object, from the viewpoint of improving resin mask layer removability and inhibiting solder corrosion,
It is more than preferably 0.7 mass parts.In addition, from the same viewpoint, in 100 mass parts of detergent composition, as ingredient A
The content of quaternary ammonium hydroxide be 3.0 below the mass that preferably 2.0 below the mass, and more preferably 1.5 below the mass.
(ingredient B)
In one or more embodiments, as ingredient B, that is, water-soluble amine of detergent composition of the present invention,
Alkylamine, alkanolamine, polyamines, ring type amine etc. can be enumerated, from the corrosion for improving resin mask layer removability and inhibition solder
Viewpoint is set out, preferably alkanolamine.In one or more embodiments, as alkanolamine, monoethanolamine, N- ethyl second can be illustrated
Hydramine, N- n-butylethanolamine, N, N- diethyl ethylene diamine, N, N- dibutylethanolamine, N- tert-butyl ethanol amine, N- methyl second
Hydramine etc..Wherein, from the viewpoint of improving resin mask layer removability and inhibiting the corrosion of solder, preferred monoethanolamine.?
In one or more embodiments, detergent composition of the present invention contains one or more ingredient B.
In one or more embodiments, amine compounds shown in the preferably following formula (II)s of water-soluble amine as ingredient B
Object.
(in formula, R5For hydrogen atom, hydroxyl, the alkyl of carbon number 1~6, the hydroxy alkyl of carbon number 1~6 or carbon number 1~6
Aminoalkyl, R6、R7It is respectively identical or different, it is the hydroxy alkyl or carbon number of hydrogen atom, the alkyl of carbon number 1~6, carbon number 1~6
1~6 aminoalkyl, R5、R6、R7It is not simultaneously hydrogen atom.)
The R of above-mentioned formula (II)5Preferably hydrogen atom, the alkyl of carbon number 1~6, the hydroxy alkyl of carbon number 1~6 or carbon number 1
~6 aminoalkyl.
As the concrete example of amine compounds shown in above-mentioned formula (II), the preferably acid ionization constant in 25 DEG C of aqueous solution
The amine compounds that pKa is 9.0 or more, can exemplify monoethanolamine (pKa=9.55), N, N- diethyl ethylene diamine (pKa=
9.87), N- methylethanolamine (pKa=9.95), ethyl amido alcohol (pKa=9.9) etc. have amine, the propane diamine of hydroxy alkyl
(pKa=10.6) etc. with the amine of aminoalkyl.Wherein, from the sight for the corrosion for improving resin mask layer removability and inhibition solder
Point sets out, preferably N- methylethanolamine, propane diamine, more preferable N- methylethanolamine.
About ingredient B, that is, water-soluble amine content of detergent composition of the present invention, in detergent composition 100
It is 3.0 mass parts or more in mass parts, from the viewpoint of improving resin mask layer removability and inhibiting solder corrosion, preferably
More than 4.0 mass parts.In addition, the content of the water-soluble amine as ingredient B is in 100 mass parts of detergent composition
14.0 below the mass, and from the same viewpoint, preferably 12.0 below the mass, and more preferably 10.0 below the mass,
Further preferably 8.0 below the mass, still more preferably for 7.0 below the mass.
(ingredient C)
It is acid or its ammonium salt as the ingredient C in detergent composition of the present invention, organic acid and nothing can be enumerated
Machine is sour or its ammonium salt is as organic acid can enumerate formic acid, acetic acid, oxalic acid, succinic acid and citric acid, as inorganic acid, can arrange
Enumerate carbonic acid, sulfuric acid, nitric acid and phosphoric acid.The ammonium salt of acid can be the hydrochlorate of ammonia.In one or more embodiments, the present invention
The detergent composition contains one or more ingredient C.As ingredient C, specifically, it is preferable that selected from by ammonium formate,
1 kind in the group that ammonium acetate, ammonium oxalate, ammonium succinate, ammonium citrate, ammonium carbonate, ammonium sulfate, ammonium nitrate and ammonium phosphate are constituted
Above compound.
It is acid or the content of its ammonium salt about the ingredient C in detergent composition of the present invention, is combined in detergent
In 100 mass parts of object, it is more than preferably 0.3 mass parts, from the viewpoint of the corrosion for inhibiting solder, preferably 0.6 mass parts
More than, more than more preferably 0.8 mass parts, more than further preferably 0.9 mass parts.In addition, the content of acid or its ammonium salt exists
In 100 mass parts of detergent composition, below the mass for 2.5, from the viewpoint of sufficiently washing resin mask layer, preferably
1.5 below the mass.
(ingredient D)
As ingredient D, that is, water in detergent composition of the present invention, ion exchange water, ultrapure water etc. can be enumerated
Inhibit the water of ionic substance.About the content of the water in detergent composition, in 100 mass parts of detergent composition,
More than 50.0 mass parts, from the viewpoint of sufficiently washing resin mask layer, more than preferably 70.0 mass parts, more preferably
More than 75.0 mass parts, more than further preferably 80.0 mass parts, in addition, the content about the water in detergent composition,
In 100 mass parts of detergent composition, below the mass for 95.0, from the viewpoint of the corrosion for inhibiting solder, preferably
93.0 below the mass.
〔pH〕
It is of the present invention to wash from the viewpoint of sufficiently washing resin mask layer in one or more embodiments
The pH for washing agent composition is preferably 10.0 or more, more preferably 10.5 or more, from the viewpoint of inhibiting solder corrosion, preferably
14 hereinafter, more preferably 13.5 hereinafter, further preferably 13.0 or less.PH can for example be come with the content of (A)~(C) ingredient
It is adjusted.
(other ingredients: organic solvent)
In one or more embodiments, from the viewpoint of the dissolubility of resin mask, washing of the present invention
Agent composition can contain organic solvent.In one or more embodiments, as organic solvent, diethylene glycol first can be enumerated
Base ether, buiyl diglycol, dimethyl sulfoxide.Go out from the viewpoint for the corrosion for improving resin mask layer removability and inhibition solder
It sends out, the organic solvent in detergent composition of the present invention is in 100 mass parts of detergent composition, preferably 0 mass
Part or more, more than more preferably 0.4 mass parts, more than further preferably 0.8 mass parts, from the same viewpoint, preferably
Below the mass for 35.0, more preferably 20.0 below the mass, and further preferably 10.0 below the mass.
(other ingredients: nitrogen-containing heterocycle aromatic compound)
In one or more embodiments, from the viewpoint of the corrosion for inhibiting solder, detergent of the present invention
Composition can contain nitrogen-containing heterocycle aromatic compound.In one or more embodiments, as nitrogen-containing heterocycle aromatic series
Object is closed, 1H- benzotriazole, 1- methyl-1 H- benzotriazole, 1,2,3-triazoles can be enumerated.From raising resin mask layer removability
And from the perspective of inhibiting the corrosion of solder, the nitrogen-containing heterocycle aromatic compound in detergent composition of the present invention exists
It is more than preferably 0.01 mass parts, more than more preferably 0.02 mass parts, further excellent in 100 mass parts of detergent composition
0.03 mass parts or more are selected as, from the same viewpoint, preferably 1 below the mass, and more preferably 0.8 below the mass,
Further preferably 0.5 below the mass.
(preparation method of detergent composition)
That is, detergent composition of the present invention can be formed in detergent in one or more embodiments
Cooperate in 100 mass parts of composition 0.5 mass parts of quaternary ammonium hydroxide (ingredient A) shown in following formula (I)s or more and 3 mass parts with
Under, more than 3 mass parts of water-soluble amine (ingredient B) and 10 below the mass, it is more than acid or its 0.3 mass parts of ammonium salt (ingredient C) and
2.5 below the mass, it is more than 50 mass parts of water (ingredient D) and 95 below the mass made of resin mask layer combined with detergent
Object.
(in formula, R1、R2、R3It is respectively identical or different, it is the alkyl of carbon number 1~4, R4For the alkyl or carbon number of carbon number 1~4
1~4 hydroxyl substituted alkyl group.)
In the one or more embodiments not being limited, detergent composition of the present invention can pass through by
Above-mentioned ingredient A~D is prepared in above-mentioned content range with the uniform mixing of row is merged into.It should be noted that of the invention
Detergent composition can be prepared into the concentrate for reducing the amount of water of ingredient D.From the viewpoint of conveying and storage, wash
The concentrate for washing agent composition is preferably concentrated into 3 times or more, from the viewpoint of being stablized production and preservation, is preferably concentrated into 10 times
Below.The detergent composition that concentrate is made can be diluted to the arbitrary concentration in the scope of the present invention when in use to make
With.
[manufacturing method of circuit substrate]
In one or more embodiments, detergent composition of the present invention can be used for being formed solder projection
In the manufacture of circuit substrate.That is, a scheme of the invention be related to include using detergent composition of the present invention come into
The manufacturing method (hereinafter also referred to " manufacturing method of the present invention ") of the circuit substrate of the process of row washing.
Based on Fig. 1, one or more embodiments of manufacturing method of the present invention are illustrated.Fig. 1 is to indicate
The outline specification figure of one or more embodiments of manufacturing method of the present invention.As shown in Fig. 1 (a), in substrate 1
Surface formed and solder mask 3 (insulating layer) and be firmly fixed.There is electricity exposing from the opening portion 7 for be formed in solder mask 3
The surface of the substrate 1 of pole 2, a part of electrode 2 is removed by exposing, and resin mask layer 4 is formed using etchant resist.It connects
, as shown in Fig. 1 (b), solder projection forming material 5 is coated on the surface of substrate 1.It is formed alternatively, can replace solder projection
Material, and solder ball is configured in the opening portion 7.Then, it is heated, as shown in Fig. 1 (c), makes solder in the electrode 2
Surface be precipitated, formed solder projection 6.In addition, being removed as shown in Fig. 1 (d) using detergent composition of the present invention
Resin mask layer 4, to obtain the circuit substrate 1 for being formed with solder projection 6.It should be noted that implementing in one or more
In mode, as needed, as shown in Fig. 1 (e), implement the planarization of solder projection 6.
Therefore, in one or more embodiments, manufacturing method of the present invention be include following process (1)~
(5) manufacturing method of circuit substrate.
Process (1): in the process that the substrate surface for being provided with weld part forms resin mask layer.
Process (2): the process of opening portion is formed in a manner of exposing the weld part in the resin mask layer.
Process (3): in the process of opening portion filling solder projection forming material.
Process (4): heating melts the solder projection forming material, and solder projection is thus made to be fixed on the weld part
Process.
Process (5): the work that substrate obtained in process (4) is washed using detergent composition of the present invention
Sequence.
[process (1)]
Process (1) is the process for forming resin mask layer in the substrate surface for being provided with weld part.One or more real
It applies in mode, for the substrate for being provided with weld part, the electricity for being provided with the weld part that should form solder projection can be enumerated
Base board, in one or more embodiments, the weld part is electrode portion.In one or more embodiments, such as Fig. 1
(a) shown in, the surface that the substrate can enumerate substrate 1 is covered by solder mask 3, and electrode portion 2 is exposed to the form on surface,
And solder mask 3 is firmly fixed at the surface of substrate 1.In the one or more embodiments not being limited, as resistance
Film 3 is welded, the resin of epoxy, acrylic acid series, polyimides system etc. can be used.In addition, for solder mask 3, in order to expose
Electrode portion 2, and opening portion can be formed before process (2), or can also reveal simultaneously or after which with process (2)
Out electrode portion 2 and form opening portion.
In one or more embodiments, as the resin material for forming resin mask layer, from the uniform thick film of formation
From the perspective of, it is preferable to use membranaceous photoresist, more preferable etchant resist.General substance can be used in etchant resist.
In one or more embodiments, about the thickness of resin mask layer, from order to be formed using solder is precipitated
From the perspective of solder amount of precipitation required for convex block, preferably 10 μm or more, more preferably 30 μm or more.In addition, at one
Or in multiple embodiments, about the thickness of resin mask layer, from the viewpoint of making resin mask layer be cured to bottom, preferably
It is 300 μm or less, more preferably 150 μm or less.
[process (2)]
Process (2) is that opening is formed in a manner of exposing the weld part in the resin mask layer formed in process (1)
The process in portion.In one or more embodiments, the formation of opening portion can be carried out by exposure, development treatment.In addition,
In one or more embodiments, process (2) simultaneously or sequentially can form opening for solder mask by exposure, development treatment
Oral area.The one or more embodiment as shown in Fig. 1 (a), resistance is formed on the surface of circuit substrate 1 using process (2)
Film 3 and resin mask layer 4 are welded, can obtain exposing from the opening portion 7 for being formed in these solder masks 3 and resin mask layer 4
The substrate of electrode portion 2.
[process (3)]
Process (3) is the process of the opening portion filling solder projection forming material formed in process (2).At one or more
In a embodiment, solder projection forming material is soldering paste, for example, can be filled with paste print process.In addition, at one or
In multiple embodiments, solder projection forming material is solder ball, for example, can use ball carries method to be filled.
In one or more embodiments, as soldering paste, the gold of (a) containing tin powder and lead, copper, silver etc. can be enumerated
Belong to soldering paste made of salt or (b) contains tin powder and be selected from least one of silver ion and copper ion and be selected from aryl phosphine
Soldering paste made of the complex compound of at least one of class, alkyl phosphine and azole.It can also be by the metal salt of above-mentioned (a) and (b)
Complex compound be used in mixed way.It should be noted that so-called tin powder, contains other than metallic tin powder, such as also
The Xi of silver-silver system tin alloy powder or tin-copper system tin alloy powder containing copper etc..As the metal salt, can enumerate
Organic carboxylate, organic sulfonate etc. out.
Solder alloy contained by solder projection forming material is typically the solder alloy of tinbase matter, but for example indium system closes
The non-tin system solder alloy such as gold can also be used in the present invention.Although previous general tin-lead eutectic weldering also can be used
Expect the particle of alloy, but it is preferable to use the particles of leadless welding alloy.As preferred leadless welding alloy, Xi-silver can be illustrated
System, tin-copper system, tin-silver-copper system etc..It is (% is quality %) as follows if enumerating representative composition example:
Sn: surplus, Ag:0.3%, Cu:0.5%
Sn: surplus, Ag:3.5%, Cu:0.7%
Sn: surplus, Ag:3.5%
Sn: surplus, Cu:0.7%.
In soldering paste, solder flux auxiliary component and solvent can also be mixed.As solder flux auxiliary component, it usually can be used and be used for
The substance of the solder materials such as tin-lead system, Xi-silver system, tin-copper system, as solvent, as long as being capable of other in dissolved composition
Ingredient, adjust viscosity, concentration substance, be not particularly limited.One or more implementation as shown in Fig. 1 (b)
Mode is such, using process (3), solder mask 3 and resin mask layer 4 is formed on the surface of circuit substrate 1, in addition, can obtain
Opening portion filling in the electrode portion 2 on the surface of circuit substrate 1 or the circuit substrate 1 configured with solder forming material 5.
[process (4)]
Process (4) is the solder projection forming material heating to filling in process (3), makes its melting, thus makes solder convex
The process that block is fixed on the weld part.In one or more embodiments, heating temperature is 200 DEG C or more, it is contemplated that electricity
The heat resistance of base board can enumerate 200 DEG C~260 DEG C.The liquidus temperature of solder projection forming material be usually 200 DEG C with
On, in other one or more embodiments, heating temperature be the liquidus temperature of the solder projection forming material with
On, it is contemplated that the heat resistance of circuit substrate can enumerate the liquidus temperature or more and 260 DEG C or less.Heating time according to
Composition of solder projection forming material etc. and determine, in one or more embodiments, preferably 30 seconds~10 minutes or so,
More preferably 1 minute~5 minutes or so.From the viewpoint of the productivity of circuit substrate, preferably pass through primary heat treatment
Fix convex block.One or more embodiment as shown in Fig. 1 (c), using process (4) circuit substrate 1 table
Face forms solder mask 3 and resin mask layer 4, in addition, can obtain being formed with weldering in the electrode portion 2 on the surface of circuit substrate 1
Expect the substrate of convex block 6.
[process (5)]
Process (5) is to be washed using detergent composition of the present invention to substrate obtained in process (4)
Process.In one or more embodiments, as the method for washing substrate with detergent composition, ultrasonic wave can be enumerated and washed
Wash method, spray-on process, dipping suspension system, infusion process, the various washing methods of wipe method.It is adapted to the type of circuit substrate, can be incited somebody to action
These methods are independent or appropriately combined.From the viewpoint of the viewpoint and washing performance that inhibit the influence to circuit substrate, preferably spray
Mist method, dipping suspension system or infusion process.
From the viewpoint of sufficiently washing resin mask layer, temperature when washing in process (5) is preferably 25 DEG C or more,
More preferably 40 DEG C or more.In addition, preferably 90 DEG C hereinafter, more preferable 80 DEG C or less from the viewpoint of the evaporation for inhibiting moisture.
In addition, from the viewpoint of sufficiently washing resin mask layer, pH when washing in process (5) is preferably 10.0 or more, more excellent
Be selected as 11.0 or more, further preferably 12.0 or more, and preferably 14.0 hereinafter, more preferably 13.5 hereinafter, further it is excellent
It is selected as 13.0 or less.
It is wash time in process (5) preferably 1 minute or more, more excellent from the viewpoint of sufficiently washing resin mask layer
Select 3 minutes or more, further preferred 5 minutes or more, from the viewpoint of the manufacturing time for shortening circuit substrate, preferably 30 minutes
Below, more preferably 20 minutes or less.
Removed from by circuit substrate the dirt remained in solubilized on circuit substrate in detergent composition and/or
From the perspective of the ingredient of detergent composition, for process (5), after carrying out washing treatment, further preferably carry out at rinsing
It manages (hereinafter also referred to process (5a))., it is preferable to use water or alcohol in rinsing processing.PH in rinsing processing is preferably near neutral
(for example, pH6.0~8.0 or pH6.5~7.5) carry out.In turn, residual in order to remove in carrying out washing treatment or rinsing after treatment
It is stored in the moisture of surface of circuit substrate, (hereinafter also referred to process (5b)) is preferably dried.
As the method for rinsing processing, it is various that infusion process, ultrasonic washing method, dipping suspension system, spray-on process can be enumerated
Method.From the viewpoint of rinsability, preferably spray-on process and infusion process, more preferably and with spray-on process and infusion process.From rinsability
From the perspective of, the temperature for rinsing processing is preferably 25 DEG C or more, more preferably 40 DEG C or more, in addition, from the steaming for inhibiting moisture
From the perspective of hair, preferably 90 DEG C hereinafter, more preferable 80 DEG C or less.From the viewpoint of rinsability, the time for rinsing processing is excellent
Select 3 minutes or more, more preferable 5 minutes or more, from the viewpoint of the manufacturing time for shortening circuit substrate, preferably 30 minutes with
Under, more preferable 20 minutes or less.
In addition, can enumerate and for example be done using baking oven or fan drying machine as the drying means in drying process
Dry method, from the viewpoint of drying property, preferably 80 DEG C or more of drying temperature, from the sight for inhibiting the influence to circuit substrate
Point sets out, and is preferably heated to 120 DEG C hereinafter, more preferable 100 DEG C or less.
[process (6)]
In one or more embodiments, from obtain with higher removal rate remove resin mask layer after, be formed with weldering
From the perspective of the circuit substrate for expecting convex block, manufacturing method of the present invention preferably includes following processes (6).
Process (6): being using containing dimethyl sulfoxide (DMSO) (ingredient S), glycol ethers (ingredient T), water-soluble at 25 DEG C
The detergent group of amine and/or quaternary ammonium hydroxide (ingredient U) and water (ingredient V) that acid ionization constant pKa in liquid is 9.0 or more
Close object, the process washed to substrate obtained in process (5).
By carrying out process (6), it is available with high removal rate remove it is after resin mask layer, be formed with solder projection
Circuit substrate.That is, embodiment one or more as shown in Fig. 1 (d), using process (6) circuit substrate 1 table
Solder projection 6 is formed in the electrode portion 2 in face and obtains removing from the solder mask 3 on the surface of circuit substrate 1 with high removal rate sets
Substrate after rouge mask layer.
In process (6), as the method for the substrate obtained in detergent composition washing procedure (5), excess of export can be enumerated
Sonic washing method, spray-on process, dipping suspension system, infusion process, the various washing methods of wipe method.It is adapted to the type of circuit substrate,
These methods can be used independent or appropriately combinedly to be washed to resin barrier layer.From the shadow inhibited to circuit substrate
From the perspective of loud viewpoint and washing performance, preferably spray-on process, dipping suspension system or infusion process.
From the viewpoint of sufficiently washing resin mask layer, temperature when washing in process (6) is preferably 25 DEG C or more,
More preferably 40 DEG C or more, in addition, from the viewpoint of the evaporation for inhibiting moisture, preferably 90 DEG C or less, more preferable 80 DEG C or less.
In addition, in one or more embodiments, from the viewpoint of sufficiently washing resin mask layer, when washing in process (6)
PH be preferably 11 or more, more preferably 12 or more.
From the viewpoint of sufficiently washing resin mask layer, the wash time in process (6) preferably 1 minute or more is more excellent
Select 3 minutes or more, further preferred 5 minutes or more, from the viewpoint of the manufacturing time for shortening circuit substrate, preferably 30 minutes
Hereinafter, more preferable 20 minutes or less.
[detergent composition of process (6)]
Detergent composition used in process (6) contain dimethyl sulfoxide (DMSO) (ingredient S), glycol ethers (ingredient T),
The amine and/or quaternary ammonium hydroxide (ingredient U) and water (ingredient that acid ionization constant pKa in 25 DEG C of aqueous solution is 9.0 or more
V).The detergent composition can be by by dimethyl sulfoxide (ingredient S), glycol ethers (ingredient T), above-mentioned amine and/or quaternary phosphonium hydroxides
Ammonium (ingredient U) and water (ingredient V) are for example mixed at 25 DEG C and are prepared.Contain dimethyl sulfoxide alternatively, it is also possible to previously prepared
The concentrated solution of (ingredient S), glycol ethers (ingredient T) and above-mentioned amine and/or quaternary ammonium hydroxide (ingredient U), then it is dilute with water (ingredient V)
Release and the detergent composition of process (6) be made be subject to using.
(ingredient S)
Ingredient S is dimethyl sulfoxide (DMSO).From the viewpoint of sufficiently washing resin mask layer, the detergent combination
The content of dimethyl sulfoxide in object is in 100 mass parts of detergent composition, more than preferably 10.0 mass parts, more preferably
It is more than 30.0 mass parts, it is more than further preferably 35.0 mass parts, still more preferably for 39.0 mass parts more than.In addition,
From the same viewpoint, in 100 mass parts of detergent composition, preferably 50.0 below the mass, more preferably 43.0 matter
Measure part or less.
(ingredient T)
Ingredient T is glycol ethers.In one or more embodiments, glycol shown in the preferably following formula (III)s of ingredient T
Ether.
R8O(AO)nR9 (III)
(in formula, R8It is the alkyl of carbon number 1~6 or the aryl of carbon number 6~15, R9It is the alkyl of hydrogen atom or carbon number 1~6,
AO is the alkylene oxygroup of carbon number 2 or 3, and n is average addition molal quantity and is 1~4.)
In addition, ingredient T is the alkyl ether or aryl ether of (poly-) alkylene glycol in one or more embodiments.As
(poly-) alkylene glycol can enumerate ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, propylene glycol, dipropylene glycol, 3 the third two
Alcohol.As alkyl ether, monomethyl ether, single ethylether, single propyl ether, single-butyl ether, single isobutyl ether, single hexyl can be enumerated
Ether, dimethyl ether, Anaesthetie Ether, butyl methyl ether, ethyl propyl ether, butyl ethyl ether, dipropyl ether, dibutyl ethers.As
Aryl ether can enumerate single phenyl ether, single-benzyl ether.From the viewpoint of sufficiently washing resin mask layer, the preferred second two of ingredient T
Alcohol, diethylene glycol, the monomethyl ether of triethylene glycol, single ethylether, single-butyl ether, single isobutyl ether, single-benzyl ether, it is specific and
Speech, preferably diethylene glycol monobutyl ether, triethylene glycol monobutyl base ether and ethylene glycol single-benzyl ether, more preferable diethylene glycol mono butyl base
Ether.Ingredient T can be individual compound shown in above-mentioned formula (III), be also possible to be made of multiple compounds.
From the viewpoint of sufficiently washing resin mask layer, the content of the ingredient T in detergent composition is in detergent group
It closes in 100 mass parts of object, more than preferably 30.0 mass parts, more than more preferably 35.0 mass parts.In addition, from same viewpoint
It sets out, the content of ingredient T is in 100 mass parts of detergent composition, and preferably 70.0 below the mass, more preferably 50.0 matter
Part is measured hereinafter, further preferably 43.0 below the mass.
From the viewpoint of the removability of resin mask layer, the mass ratio ((S)/(T)) of ingredient S and ingredient T are preferably
0.15 or more, more preferably 0.30 or more, further preferably 0.50 or more, and preferably 2.00 hereinafter, more preferably
1.50 hereinafter, further preferably 1.20 or less.
(ingredient U)
Ingredient U is the amine and/or quaternary ammonium hydroxide that the acid ionization constant pKa in 25 DEG C of aqueous solution is 9.0 or more.Just
For ingredient U, from the viewpoint of inhibiting solder corrosion, preferably amine, from the viewpoint of being sufficiently washed resin mask layer,
Preferably quaternary ammonium hydroxide.In one or more embodiments, ingredient U is water-soluble shown in following formula (IV)s and at 25 DEG C
Acid ionization constant pKa in liquid is quaternary ammonium hydroxide shown in 9.0 or more amine, and/or following formula (V)s.PKa is recorded in example
As " a chemical brief guide basis piece (chemistry just compile by list basis) " ((it is kind that ball is compiled to Bian Wanshan Co., Ltd., Japanization association by Japanization association
Co., Ltd.)) etc..PKa is preferably 9.5 or more, and more preferably 9.8 or more, and preferably 12.0 hereinafter, more preferably 11.5
Hereinafter, further preferably 11.0 or less.
(R10)3N (IV)
(in formula, R10Respectively it is identical or different, be hydrogen atom, the alkyl of carbon number 1~6, carbon number 1~6 hydroxy alkyl or
The aminoalkyl of carbon number 1~6,3 R10It is not simultaneously hydrogen atom.)
[(R11)3-N-R12]+OH- (V)
(wherein, in formula, R11Indicate the alkyl of carbon number 1~3, R12Indicate 1~3 alkyl or the hydroxyl alkane of carbon number 1~3
Base.)
The amine compounds for being 9.0 or more as the acid ionization constant pKa shown in above-mentioned formula (IV) in 25 DEG C of aqueous solution
The concrete example of object can exemplify monoethanolamine (pKa=9.55), N, N- diethyl ethylene diamine (pKa=9.87), N- methyl ethanol
Amine (pKa=9.95), ethyl amido alcohol (pKa=9.9) etc. have the tool such as amine, propane diamine (pKa=10.6) of hydroxy alkyl
There is the amine of aminoalkyl.Wherein, from the viewpoint of removing resin mask, preferably N- methylethanolamine, propane diamine, more preferable N-
Methylethanolamine.It is believed that the amine for being 9.0 or more by using pKa, thus using alkali to the low molecular weight of resin mask layer
Change is worked.
As quaternary ammonium hydroxide shown in above-mentioned formula (V), the salt formed by cation below and hydroxide can be illustrated
Deng.In addition, tetramethyl as such as tetraalkylammonium cation (carbon number of alkyl is 1~6) can be enumerated as the cation
Base ammonium, tetraethyl ammonium, four (n- or i-) propyl ammoniums, four (n- or i-) butyl ammoniums, four pentyl ammonium, tetrahexyl ammonium, trimethylethyl
Ammonium, in addition, trimethyl (2- hydroxyl as the alkyl ammonium cation (carbon number of alkyl is 1~6) with hydroxy alkyl can be enumerated
Base ethyl) ammonium and triethyl group (2- hydroxyethyl) ammonium etc..Wherein, preferred tetramethyl-ammonium.As quaternary ammonium hydroxide, specifically,
Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, four pentyl hydrogen can be enumerated
Amine-oxides, four hexyl ammonium hydroxide ammonium, trimethylethyl ammonium hydroxide, trimethyl (2- hydroxyethyl) ammonium hydroxide, triethyl group
(2- hydroxyethyl) ammonium hydroxide object etc..Wherein, from the viewpoint of removing resin mask, preferred tetramethylammonium hydroxide.
From the viewpoint of the removability of resin mask layer, the content of the ingredient U in detergent composition is in detergent group
It closes in 100 mass parts of object, it is more than preferably 0.5 mass parts, it is more than more preferably 1.0 mass parts, further preferably 3.0 mass
Part or more, also, in 100 mass parts of detergent composition, preferably 20.0 below the mass, more preferably 15.0 mass parts
Below.
(ingredient V)
Ingredient V is water, and preferred ion exchanged water, ultrapure water etc. inhibit the water of ionic substance.From resin mask layer
From the perspective of removability, the content of the ingredient V in detergent composition is in 100 mass parts of detergent composition, preferably
More than 3.0 mass parts, more than more preferably 8.0 mass parts, more than further preferably 12.0 mass parts, and in detergent group
It closes in 100 mass parts of object, preferably 20.0 below the mass, and more preferably 18.0 below the mass.
From the viewpoint of the removability of resin mask layer, the mass ratio ((U)/(V)) of ingredient U and ingredient V are preferably 0.1
More than, more preferably 0.2 or more, and preferably 1.5 or less, more preferably 0.9 hereinafter, further preferably 0.6 or less.
It is the total amount of ingredient S and ingredient T, total with ingredient U and ingredient V from the viewpoint of the removability of resin mask layer
The mass ratio [((S)+(T))/((U)+(V))] of amount is preferably 1.0 or more, and more preferably 2.0 or more, also, preferably 10.0
Hereinafter, more preferably 5.0 or less.
〔pH〕
In one or more embodiments, from the viewpoint of sufficiently washing resin mask layer, detergent composition
PH is preferably 11 or more, and more preferably 12 or more.The content of amine and/or quaternary ammonium hydroxide that pH can use ingredient U is subject to
Adjustment.
From by removed on circuit substrate the dirt remained in solubilized on circuit substrate in detergent composition and/or
From the perspective of the ingredient of detergent composition, it is (following further preferably to carry out rinsing processing after carrying out washing treatment for process (6)
Also referred to as process (6a))., it is preferable to use water or alcohol in rinsing processing.Rinsing processing in pH preferably near neutral (for example,
PH6.0~8.0 or pH6.5~7.5) it carries out.In turn, in carrying out washing treatment or rinsing after treatment, electricity is remained in order to remove
The moisture of roadbed plate surface, and it is preferred that (hereinafter also referred to process (6b)) is dried.
As the method for rinsing processing, it is various that infusion process, ultrasonic washing method, dipping suspension system, spray-on process can be enumerated
Method.From the viewpoint of rinsability, preferably spray-on process and infusion process, more preferably and with spray-on process and infusion process.From rinsability
From the perspective of, the temperature for rinsing processing is preferably 25 DEG C or more, and more preferably 40 DEG C or more, in addition, from the steaming for inhibiting moisture
From the perspective of hair, preferably 90 DEG C hereinafter, more preferable 80 DEG C or less.From the viewpoint of rinsability, the time for rinsing processing is excellent
Select 3 minutes or more, more preferable 5 minutes or more, from the viewpoint of the manufacturing time for shortening circuit substrate, preferably 30 minutes with
Under, more preferable 20 minutes or less.
In addition, can enumerate as the drying means in drying process for example, being dried with baking oven or fan drying machine
Method, from the viewpoint of drying property, drying temperature is preferably 80 DEG C or more, from the sight for inhibiting influence to circuit substrate
Point sets out, and is preferably heated to 120 DEG C hereinafter, more preferably 100 DEG C or less.
[engagement of electronic component]
In one or more embodiments, the manufacturing method of circuit substrate of the present invention also includes following process,
That is, loading electronic component on the substrate obtained in the process (5), it is heated to the liquidus temperature 260 of the solder projection
DEG C temperature below, engages the weld part of electronic component with the weld part of substrate, thus obtains the base for being bonded to electronic component
Plate.According to the embodiment, the circuit substrate for being bonded to electronic component can be produced.
[the removing method of resin mask layer]
In other schemes, the present invention, which is formed from the circuit substrate of resin mask layer, removes the resin mask layer
Method, that is, the method for being related to including the steps that washing the substrate with detergent composition of the present invention.For removing
It, can be as described above for the specific composition of agent composition and detergent composition and washing methods using them.
[kit]
Other other schemes of the invention are the manufacturing methods of circuit substrate of the present invention and/or for this hair
Kit in the removing method of the bright resin mask layer, wherein contain institute of the present invention in the state of being related to before cooperation
The kit of at least one kind of ingredient in the ingredient A~D for the detergent composition stated.With regard to detergent composition of the present invention
Specific composition and using for these washing methods, can be as described above.
About above-mentioned embodiment, the present invention further discloses groups described in one or more embodiments below
Close object, manufacturing method or purposes.
It<1>include the manufacturing method of following processes (1)~(5) circuit substrate.
Process (1): in the process that the substrate surface for being provided with weld part forms resin mask layer.
Process (2): the process of opening portion is formed in a manner of exposing the weld part in the resin mask layer.
Process (3): in the process of opening portion filling solder projection forming material.
Process (4): heating melts the solder projection forming material, and solder projection is thus fixed on the weld part
Process.
Process (5): the process that substrate obtained in process (4) is washed using detergent composition, wherein described
Detergent composition contains quaternary ammonium hydroxide (ingredient A) 0.5 shown in following formula (I)s in 100 mass parts of detergent composition
More than mass parts and 3.0 below the mass, containing more than 3.0 mass parts of water-soluble amine (ingredient B) and 14.0 below the mass, contain
Have acid or its 0.3 mass parts of ammonium salt (ingredient C) or more and 2.5 below the mass, containing more than 50.0 mass parts of water (ingredient D) and
95.0 below the mass.
(in formula, R1、R2、R3It is respectively identical or different, it is the alkyl of carbon number 1~4, R4For the alkyl or carbon number of carbon number 1~4
1~4 hydroxyl substituted alkyl group.)
<2>manufacturing method of the circuit substrate according to<1>, wherein the quaternary ammonium hydroxide as the ingredient A is selected from
By tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, four pentyl ammonium hydroxide,
Four hexyl ammonium hydroxide ammonium, trimethylethyl ammonium hydroxide, trimethyl (2- hydroxyethyl) ammonium hydroxide, triethyl group (2- hydroxyl
Ethyl) group that is constituted of ammonium hydroxide and their combination.
<3>manufacturing method of the circuit substrate according to<1>or<2>, wherein the quaternary phosphonium hydroxides as the ingredient A
The content of ammonium is 0.5 mass parts or more, more than preferably 0.7 mass parts, and/or is in 100 mass parts of detergent composition
3.0 below the mass, and preferably 2.0 below the mass, and more preferably 1.5 below the mass.
<4>manufacturing method of the circuit substrate according to any one of<1>~<3>, wherein as the ingredient B's
Water-soluble amine is selected from the group being made of alkylamine, alkanolamine, polyamines, ring type amine and their combination, preferably alkanolamine, institute
Alkanolamine is stated to be selected from by monoethanolamine, N- ehtylethanolamine, N- n-butylethanolamine, N, N- diethyl ethylene diamine, N, bis- fourth of N-
The group that ethylethanolamine, N- tert-butyl ethanol amine, N- methylethanolamine and their combination are constituted, preferably monoethanolamine.
<5>manufacturing method of the circuit substrate according to any one of<1>~<4>, wherein as the ingredient B's
Water-soluble amine is amine shown in following formula (II)s.
<6>manufacturing method of the circuit substrate according to any one of<1>~<5>, wherein as the ingredient B's
The content of water-soluble amine is 3.0 mass parts or more in 100 mass parts of detergent composition, it is more than preferably 4.0 mass parts,
And/or below the mass for 14.0, preferably 12.0 below the mass, and more preferably 10.0 below the mass, further preferably
Below the mass for 8.0, still more preferably for 7.0 below the mass.
<7>manufacturing method of the circuit substrate according to any one of<1>~<6>, wherein as the ingredient C's
Acid or its ammonium salt content in 100 mass parts of detergent composition, be 0.3 mass parts more than, preferably 0.6 mass parts with
On, more than more preferably 0.8 mass parts, more than further preferably 0.9 mass parts, and below the mass for 2.5, preferably
1.5 below the mass.
<8>manufacturing method of the circuit substrate according to any one of<1>~<7>, wherein as the ingredient D's
The content of water is 50.0 mass parts or more in 100 mass parts of detergent composition, more than preferably 70.0 mass parts, more excellent
It is selected as 75.0 mass parts or more, it is more than further preferably 80.0 mass parts, and/or, it is 95.0 below the mass, preferably
93.0 below the mass.
<9>manufacturing method of the circuit substrate according to any one of<1>~<8>, wherein in the process (4)
Heating temperature is preferably 200 DEG C or more, and/or preferably 260 DEG C or less.
<10>manufacturing method of the circuit substrate according to any one of<1>~<9>, wherein in the process (4)
Heating temperature is preferably the liquidus temperature of the solder projection forming material or more and 260 DEG C of temperature below.
<11>manufacturing method of the circuit substrate according to any one of<1>~<10>, wherein in the process (5)
Washing when pH be preferably 10.0 or more, more preferably 11.0 or more, further preferably 12.0 or more, and/or, preferably
14.0 hereinafter, more preferably 13.5 hereinafter, further preferably 13.0 or less.
<12>manufacturing method of the circuit substrate according to any one of<1>~<11>, wherein in the process (5)
Washing when temperature be preferably 25 DEG C or more, more preferably 40 DEG C or more, and/or, preferably 90 DEG C or less, be more preferably 80
DEG C or less.
<13>manufacturing method of the circuit substrate according to any one of<1>~<12>, wherein process (5) further includes
Rinsing processing (process (5a)) is carried out after carrying out washing treatment and/or is dried (process (5b)).
<14>manufacturing method of the circuit substrate according to any one of<1>~<13>, further includes following processes
(6)。
Process (6): using containing dimethyl sulfoxide (DMSO) (ingredient S), glycol ethers (ingredient T), in 25 DEG C of aqueous solutions
In acid ionization constant pKa be 9.0 or more amine and/or quaternary ammonium hydroxide (ingredient U) and water (ingredient V) detergent combination
Object, the process that substrate obtained in process (5) is washed.
<15>manufacturing method of the circuit substrate according to<14>, wherein two in the detergent composition of process (6)
Alcohol ether (ingredient T) is glycol ethers shown in following formula (III)s.
R8O(AO)nR9 (III)
(in formula, R8It is the alkyl of carbon number 1~6 or the aryl of carbon number 6~15, R9It is the alkyl of hydrogen atom or carbon number 1~6,
AO is the alkylene oxygroup of carbon number 2 or 3, and n is average addition molal quantity and is 1~4.)
<16>manufacturing method of the circuit substrate according to<14>or<15>, wherein the detergent group of the process (6)
The amine and/or quaternary ammonium hydroxide (ingredient U) closed in object is hydrogen shown in amine shown in following formula (IV)s, and/or following formula (V)s
Aoxidize quaternary ammonium.
(R10)3N (IV)
(in formula, R10Respectively it is identical or different, be hydrogen atom, the alkyl of carbon number 1~6, carbon number 1~6 hydroxy alkyl or
The aminoalkyl of carbon number 1~6,3 R10It is not simultaneously hydrogen atom.)
[(R11)3-N-R12]+OH- (V)
(in formula, R11It is respectively identical or different, it is alkyl, the R of carbon number 1~312For 1~3 alkyl or the hydroxyl of carbon number 1~3
Base alkyl.)
<17>manufacturing method of the circuit substrate according to any one of<14>~<16>, wherein the process (6)
Detergent composition relative to 100 mass parts of detergent composition, containing 10.0 mass parts of dimethyl sulfoxide (ingredient S) with
It is more than upper, preferably 30.0 mass parts, it is more than more preferably 35.0 mass parts, it is more than further preferably 39.0 mass parts and/
Or 50.0 below the mass, preferably 43.0 below the mass, containing it is more than 30.0 mass parts of glycol ethers (ingredient T), be preferably
More than 35.0 mass parts and/or 70.0 below the mass, preferably 50.0 below the mass, more preferably 43.0 mass parts with
Under, containing more than 0.5 mass parts of amine and/or quaternary ammonium hydroxide (ingredient U), preferably more than 1.0 mass parts, more preferably 3.0
More than mass parts and/or 20.0 below the mass, preferably 15.0 below the mass, containing 3.0 mass parts of water (ingredient V) with
It is more than upper, preferably 8.0 mass parts, more than more preferably 12.0 mass parts and/or 20.0 below the mass, preferably 18.0 matter
Measure part or less.
<18>manufacturing method of the circuit substrate according to any one of<14>~<17>, wherein the process (6)
The mass ratio [(S)/(T)] of dimethyl sulfoxide (ingredient S) in detergent composition and glycol ethers (ingredient T) is 0.15 or more,
Preferably 0.30 or more, be more preferably 0.50 or more, and/or, 2.00 or less, preferably 1.50 or less, more preferably 1.20 with
Under.
<19>manufacturing method of the circuit substrate according to any one of<14>~<18>, wherein the process (6)
The acid ionization constant pKa of amine and/or quaternary ammonium hydroxide (ingredient U) in 25 DEG C of aqueous solution in detergent composition is preferably
9.5 or more, be more preferably 9.8 or more, and/or, preferably 12.0 or less, more preferably 11.5 or less, further preferably
11.0 or less.
<20>manufacturing method of the circuit substrate according to any one of<14>~<19>, wherein the process (6)
The content of amine and/or quaternary ammonium hydroxide (ingredient U) in detergent composition is in 100 mass parts of detergent composition
More than 0.5 mass parts, preferably more than 1.0 mass parts, more than more preferably 3.0 mass parts and/or 20.0 below the mass, it is excellent
It is selected as 15.0 below the mass.
<21>manufacturing method of the circuit substrate according to any one of<14>~<20>, wherein the process (6)
The content of water (ingredient V) in detergent composition is 3.0 mass parts or more, is preferably 8.0 mass parts or more, is more preferably
It is more than 12.0 mass parts, and/or, it is 20.0 below the mass, preferably 18.0 below the mass.
<22>manufacturing method of the circuit substrate according to any one of<14>~<21>, wherein ingredient U and ingredient V
Mass ratio ((U)/(V)) be preferably 0.1 or more, more preferably 0.2 or more, and/or, preferably 1.5 or less, more preferably
0.9 hereinafter, further preferably 0.6 or less.
<23>manufacturing method of the circuit substrate according to any one of<14>~<22>, wherein ingredient S and ingredient T
Total amount, be preferably 1.0 or more with the mass ratio [((S)+(T))/((U)+(V))] of the total amount of ingredient U and ingredient V, more preferably
It is 2.0 or more, and/or, preferably 10.0 or less, more preferably 5.0 or less.
<24>manufacturing method according to any one of<14>~<23>, wherein the detergent of the process (6) combines
The pH of object is preferably 11 or more, more preferably 12 or more.
<25>manufacturing method of the circuit substrate according to any one of<14>~<24>, wherein in the process (5)
It include the process for rinsing processing between the process (6).
<26>a kind of detergent composition, wherein in 100 mass parts of detergent composition,
Containing more than 0.5 mass parts of quaternary ammonium hydroxide (ingredient A) shown in following formula (I)s and 3.0 below the mass,
Containing more than 3.0 mass parts of water-soluble amine (ingredient B) and 14.0 below the mass,
Containing more than acid or its 0.3 mass parts of ammonium salt (ingredient C) and 2.5 below the mass,
Containing more than 50.0 mass parts of water (ingredient D) and 95.0 below the mass.
(in formula, R1、R2、R3It is respectively identical or different, it is the alkyl of carbon number 1~4, R4For the alkyl or carbon number of carbon number 1~4
1~4 hydroxyl substituted alkyl group.)
<27>application of detergent composition described in a kind of<26>, as electricity described in any one of<1>~<25>
Detergent composition in the process (5) of the manufacturing method of base board.
<28>a kind of detergent composition, containing dimethyl sulfoxide (DMSO) (ingredient S), glycol ethers (ingredient T), 25
DEG C aqueous solution in acid ionization constant pKa be 9.0 or more amine and/or quaternary ammonium hydroxide (ingredient U) and water (ingredient V).
<29>application of detergent composition described in a kind of<28>, as electricity described in any one of<11>~<25>
Detergent composition in the process (6) of the manufacturing method of base board.
<30>a kind of washing methods of circuit substrate comprising use detergent composition described in<26>or<28>to electricity
The step of base board is washed.
<31>a kind of kit is the kit for manufacturing method described in any one of<14>~<25>, packet
It is combined containing detergent described in<28>used in detergent composition described in<26>used in process (5) and process (6)
Object.
<32>application of the detergent composition as the detergent in circuit substrate manufacture described in a kind of<26>.
[embodiment]
Embodiment below is for the purpose of illustration of the invention, in any sense also that the present invention is limited
Intention.In embodiment, % is exactly quality % as long as no specifying.
<Examples 1 to 30 and comparative example 1~12>
Using following resin mask layer detergent compositions, circuit substrate, manufacture is formed with the circuit of solder projection
Substrate.
[preparation of resin mask layer detergent composition]
With 1 mass parts of tetramethylammonium hydroxide, 5 mass parts of monoethanolamine, 1 mass parts of ammonium formate, buiyl diglycol
12 mass parts, 4 mass parts of dimethyl sulfoxide, 77 mass parts of water (total 100 mass parts) are cooperated, they are uniformly mixed,
Thus the resin mask layer detergent composition of embodiment 1 is prepared.PH is 10.9.It should be noted that pH is at 25 DEG C
The pH of grinding Liquid composition can be measured using pH meter, be the number being impregnated into electrode after grinding Liquid composition after forty minutes
It is worth (similarly hereinafter).
It is same with embodiment 1 instead of the composition of the resin mask layer detergent composition of embodiment 1 shown in table 1 and table 2
Sample prepares the resin mask layer detergent composition of embodiment 2~30, comparative example 1~12.
[circuit substrate]
The circuit substrate used in the formation of solder projection is the glass ring of 300 μm of thickness, size 15mm × 15mm
Oxygen substrate.For the substrate, electrode of every 1 chip with 50 μm of spacing with 3600 25 μm of diameter of copper surface.Base
The surrounding them of plate surface is higher than the solder mask that the height of electrode is 15 μm and surrounds.
[manufacture for being formed with the circuit substrate of solder projection]
In Examples 1 to 30 and comparative example 1~12, solder is formed with to manufacture according to following processes (1)~process (5b)
The circuit substrate of convex block.
Process (1) attaches etchant resist (Du Pont: WB- on the solder mask (sun ink: AUS410) for being formed in circuit substrate
5030) resin mask layer, is formd.
Process (2) is formed in the resin mask layer and solder mask on the electrode of circuit substrate using exposure, development treatment
Opening portion.
Process (3) is coated with commercially available soldering paste, and ((thousand live metal industry system, solder to Eco solder M705-GRN360-K2-V
Mixture, the liquidus temperature of metal (Sn-3Ag-0.5Cu) and solder flux auxiliary agent (mixture of rosin acid, additive and solvent)
217℃)。
Process (4) heats 1 minute on 250 DEG C of hot plate, makes its reflow, and it is convex that solder is formed on the electrode of circuit substrate
Block.The circuit substrate is cut into 1cm square, test block is made.
200ml of the process (5) in the resin mask layer detergent composition for being put into 100g for being held in temperature 60 C
Beaker in, the test block of above-mentioned 1cm square is impregnated 3 minutes, is washed, test block is taken out from beaker.
Process (5a) impregnates test block 5 minutes in the ion exchange water for being held in temperature 60 C, is rinsed, and takes out
Test block.
Process (5b) is 15 minutes dry at 85 DEG C of temperature with air-supply low-temperature drier by test block.
About the removability of the resin mask layer in the test block of Examples 1 to 30 and comparative example 1~12, with following items
Part is evaluated.The results are shown in tables 2.
<evaluation of resin mask removability>
Test block after observing the manufacture of (multiplying power: 900 times) circuit substrate with optical microscopy, by the test of 1cm square
5 visuals field are selected in part, and the area of the resin mask remained on substrate is calculated with the area estimation mode of optical microscopy,
Calculate Washing ratio.It is as follows for the optical microscopy in the calculation method of removal rate, measurement.Examples 1 to 30 and compare
Example 1~12 is evaluated with the position other than convex block periphery.It should be noted that the position other than convex block periphery is difficult to wash,
So being the position for being easy to show difference.
Removal rate=(the resin mask residue area on the substrate after the gross area-washing in 5 visuals field) 5 visuals field ÷
The gross area × 100
Mensuration machine: KEYENCE Digital microscope VHX-2000
<dissolubility of tin>
It, will be with the pure medicine of light in the resin mask layer of Examples 1 to 30 and comparative example 1~12 in detergent composition 20g
Tin (granular) 1.8g of industry system is impregnated when stirring 20 minutes at 50 DEG C, measures the tin dissolved out in detergent compositions
Concentration.The concentration of tin is higher, then it represents that solder corrosivity is higher.
The concentration mensuration of tin carries out by the following method.
For detergent composition, measured with ICP apparatus for analyzing luminosity (PerkinElmer corporation, Optima5300)
The luminous intensity of tin quantifies Sn etch quantity.
Table 1
As shown in table 2, if using the resin mask layer detergent composition of Examples 1 to 30 in process (5),
Compared with comparative example 1~12, it can wash well and remove resin mask layer, and can inhibit the corrosion of solder.
<solder SEM observation>
In the resin mask layer detergent composition of embodiment 10 and comparative example 1, thousand will be equipped with and live metal industry
The substrate of the solder (Sn-3Ag-0.5Cu, diameter 80um) of system impregnates 20 minutes at 50 DEG C.Utilize FE-SEM (Hitachi
HighTech system, S-4000) solder surface of cleaning compositions dipping front and back is amplified to 900 times, observe that whether there is or not pitting corrosions
Deng corrosion.It is as shown in Figure 2 to observe photo.In the case where impregnating in embodiment 10, the variation of solder surface is not seen.Comparative example 1
In the case where middle dipping, solder surface observes pitting corrosion.
<embodiment 31~48 and comparative example 13~26>
[manufacture for being formed with the circuit substrate of solder projection]
Using embodiment 24 resin mask layer detergent composition (embodiment 31~39, comparative example 13~19) and
The resin mask layer of embodiment 9 is with detergent composition (embodiment 40~48, comparative example 20~26), according to following processes (1)
~process (6b) has manufactured the circuit substrate for being formed with solder projection.It should be noted that used in the formation of solder projection
Circuit substrate uses substrate same as described above.
Process (1) attaches etchant resist (Du Pont: WB- on the solder mask (sun ink: AUS410) for being formed in circuit substrate
5030) resin mask layer, is formed.
Process (2) is formed in the resin mask layer and solder mask on the electrode of circuit substrate using exposure, development treatment
Opening portion.
Process (3) is coated with commercially available soldering paste, and ((thousand live made of metal, solder metal to Eco solder M705-GRN360-K2-V
(Sn-3Ag-0.5Cu) with mixture, the liquidus temperature 217 of solder flux auxiliary agent (mixture of rosin acid, additive and solvent)
℃)。
Process (4) heats 1 minute on 250 DEG C of hot plate, makes its reflow, and it is convex that solder is formed on the electrode of circuit substrate
Block.The circuit substrate is cut into 1cm square, test block is made.
Process (5) is burnt in the 200ml for being put into 100g resin mask layer detergent composition for being held in temperature 60 C
In cup, the test block of above-mentioned 1cm square is impregnated 1 minute and washed, test block is taken out from beaker.
Process (5a) impregnates test block 5 minutes in the ion exchange water for being held in temperature 60 C, is rinsed, and takes out
Test block.
Process (5b) is 15 minutes dry at 85 DEG C of temperature with air-supply low-temperature drier by test block.
Process (6), will be above-mentioned in the 200ml beaker for being put into 100g detergent composition for being held in temperature 60 C
The test block of 1cm square is impregnated 1 minute and is washed, and test block is taken out from beaker.
Process (6a) impregnates test block 5 minutes in the ion exchange water for being held in temperature 60 C, is rinsed, and takes out
Test block.
Process (6b) is 15 minutes dry at 85 DEG C of temperature with air-supply low-temperature drier by test block.
[preparation of the detergent composition of process (6)]
With 40 mass parts of dimethyl sulfoxide, 40 mass parts of diethylene glycol monobutyl ether, 5 mass parts of tetramethylammonium hydroxide and
15 mass parts of water (total 100 mass parts) are cooperated, and by uniformly mixing them, prepare the process (6) of embodiment 31
Detergent composition.In addition, the detergent composition about embodiment 32~48 and the process (6) of comparative example 13~26, is removed
Cooperated other than each ingredient according to composition described in table 3 and 4 with defined mass parts, is equally prepared with embodiment 31.
It should be noted that embodiment 31~39 (table 3) and embodiment 40~48 (table 4) are washing for process (6) of same composition respectively
Agent composition is washed, comparative example 13~19 (table 3) and comparative example 20~26 (table 4) are the washing of the process (6) of same composition respectively
Agent composition.The pH of the detergent composition is shown in table 3 and 4.The column pH " > 14 " refers to the case where pH is more than 14 in these tables.
About the removability of the resin mask layer in the test block of embodiment 31~48 and comparative example 13~26, with it is above-mentioned
Same condition is evaluated.The results are shown in tables 3 and 4.
As shown in table 3 and 4, if using the detergent composition of embodiment 31~48 in process (6), with comparative example 13
~26 compare, and can wash well and remove resin mask layer.
Claims (13)
1. a kind of manufacturing method of circuit substrate comprising following process (1)~(5),
Process (1): be provided with weld part substrate surface formed resin mask layer process,
Process (2): the process for forming opening portion in a manner of exposing the weld part in the resin mask layer,
Process (3): the opening portion filling solder projection forming material process,
Process (4): heating melts the solder projection forming material, and solder projection is thus made to be fixed on the work of the weld part
Sequence,
Process (5): it is more than 10.0 and 14.0 or less, carried out using detergent composition to substrate obtained in process (4) in pH
Washing process, wherein the detergent composition is in 100 mass parts of detergent composition, containing shown in following formula (I)s
Quaternary ammonium hydroxide, that is, 0.5 mass parts of ingredient A more than and 3.0 below the mass, contain water-soluble amine, that is, 3.0 mass of ingredient B
Part or more and 14.0 below the mass, more than ammonium salt, that is, 0.3 mass parts of ingredient C containing acid and 2.5 below the mass, contain
More than water, that is, 50.0 mass parts of ingredient D and 95.0 below the mass,
In formula (I), R1、R2、R3It is respectively identical or different, it is the alkyl of carbon number 1~4, R4For carbon number 1~4 alkyl or carbon number 1~
4 hydroxyl substituted alkyl group.
2. the manufacturing method of circuit substrate according to claim 1, wherein
Ammonium salt, that is, ingredient C of the acid be selected from by ammonium formate, ammonium acetate, ammonium oxalate, ammonium succinate, ammonium citrate, ammonium carbonate,
One or more of the group that ammonium sulfate, ammonium nitrate and ammonium phosphate are constituted.
3. the manufacturing method of circuit substrate according to claim 1, wherein
The water-soluble amine, that is, ingredient B is amine shown in following formula (II)s,
In formula (II), R5For the ammonia of hydrogen atom, hydroxyl, the alkyl of carbon number 1~6, the hydroxy alkyl of carbon number 1~6 or carbon number 1~6
Base alkyl, R6、R7It is respectively identical or different, it is hydrogen atom, the alkyl of carbon number 1~6, the hydroxy alkyl of carbon number 1~6 or carbon number 1
~6 aminoalkyl, R5、R6、R7It is not simultaneously hydrogen atom.
4. the manufacturing method of circuit substrate according to claim 1, wherein
Heating temperature in the process (4) is 200 DEG C or more and 260 DEG C or less.
5. the manufacturing method of circuit substrate according to claim 1, wherein
Heating temperature in the process (4) is the liquidus temperature of the solder projection forming material or more and 260 DEG C or less
Temperature.
6. the manufacturing method of circuit substrate described according to claim 1 ~ any one of 5 further includes following processes (6),
Process (6): the work that substrate obtained in process (5) is washed using the detergent composition containing following compositions
Sequence, the ingredient are ingredient S: dimethyl sulfoxide, that is, DMSO, ingredient T: the acidolysis in glycol ethers, U:25 DEG C of ingredient of aqueous solution
From the constant pKa amine for being 9.0 or more and/or quaternary ammonium hydroxide and ingredient V: water.
7. the manufacturing method of circuit substrate according to claim 6, wherein
Glycol ethers, that is, ingredient T in the detergent composition of process (6) is glycol ethers shown in following formula (III)s,
R8O(AO)nR9 (III)
In formula (III), R8For the alkyl of carbon number 1~6 or the aryl of carbon number 6~15, R9For hydrogen atom or the alkyl of carbon number 1~6,
AO is the alkylene oxygroup of carbon number 2 or 3, and n is average addition molal quantity and is 1~4.
8. the manufacturing method of circuit substrate according to claim 6, wherein
Amine and/or quaternary ammonium hydroxide, that is, ingredient U in the detergent composition of process (6) be amine shown in following formula (IV)s and/
Or quaternary ammonium hydroxide shown in following formula (V)s,
(R10)3N (IV)
In formula (IV), R10It is respectively identical or different, it is the hydroxy alkyl or carbon of hydrogen atom, the alkyl of carbon number 1~6, carbon number 1~6
The aminoalkyl of number 1~6,3 R10It is not simultaneously hydrogen atom,
[(R11)3-N-R12]+OH- (V)
In formula (V), R11It is respectively identical or different, it is the alkyl of carbon number 1~3, R12For the alkyl or carbon number 1~3 of carbon number 1~3
Hydroxy alkyl.
9. the manufacturing method of circuit substrate according to claim 6, wherein
In the detergent composition of process (6), relative to 100 mass parts of detergent composition, contain
More than dimethyl sulfoxide, that is, 10.0 mass parts of ingredient S and 50.0 below the mass,
More than glycol ethers, that is, 30.0 mass parts of ingredient T and 70.0 below the mass,
It is more than amine and/or quaternary ammonium hydroxide, that is, 0.5 mass parts of ingredient U and 20.0 below the mass and
More than water, that is, 3.0 mass parts of ingredient V and 20.0 below the mass.
10. the manufacturing method of circuit substrate according to claim 6, wherein
Dimethyl sulfoxide, that is, ingredient S and glycol ethers, that is, ingredient T mass ratio in the detergent composition of process (6) is with S/T table
It is shown as 0.15 or more and 2.00 or less.
11. the manufacturing method of circuit substrate according to claim 6, wherein
It include the process for rinsing processing between the process (5) and the process (6).
12. a kind of detergent composition, pH be more than 10.0 and 14.0 hereinafter,
Its in 100 mass parts of detergent composition,
Containing more than quaternary ammonium hydroxide shown in following formula (I)s, that is, 0.5 mass parts of ingredient A and 3.0 below the mass,
Containing more than water-soluble amine, that is, 3.0 mass parts of ingredient B and 14.0 below the mass,
More than ammonium salt, that is, 0.3 mass parts of ingredient C containing acid and 2.5 below the mass,
Containing more than water, that is, 50.0 mass parts of ingredient D and 95.0 below the mass,
In formula (I), R1、R2、R3It is respectively identical or different, it is alkyl, the R of carbon number 1~44For carbon number 1~4 alkyl or carbon number 1~
4 hydroxyl substituted alkyl group.
13. a kind of application of the detergent composition described in claim 12 as the detergent in circuit substrate manufacture.
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| CN201910364110.9A CN110225667B (en) | 2013-09-11 | 2014-09-10 | Detergent composition for resin mask layer and method for manufacturing circuit board |
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| KR (1) | KR102257405B1 (en) |
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| JP6808714B2 (en) * | 2015-08-03 | 2021-01-06 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | Cleaning composition |
| JP6670100B2 (en) * | 2015-12-25 | 2020-03-18 | 花王株式会社 | Cleaning composition for removing resin mask |
| JP6824719B2 (en) * | 2015-12-28 | 2021-02-03 | 花王株式会社 | Cleaning agent composition for removing negative resin mask |
| JP2017119782A (en) * | 2015-12-28 | 2017-07-06 | 花王株式会社 | Detergent composition for water-soluble flux |
| TWI685718B (en) * | 2016-06-20 | 2020-02-21 | 日商三菱製紙股份有限公司 | Method for forming solder resist pattern |
| JP6860276B2 (en) | 2016-09-09 | 2021-04-14 | 花王株式会社 | Cleaning agent composition for peeling resin mask |
| JP6924690B2 (en) * | 2017-12-21 | 2021-08-25 | 花王株式会社 | Resin mask peeling cleaning method |
| US10948826B2 (en) * | 2018-03-07 | 2021-03-16 | Versum Materials Us, Llc | Photoresist stripper |
| JP7036212B2 (en) * | 2018-04-26 | 2022-03-15 | 栗田工業株式会社 | Stabilization of compositions containing quaternary trialkyl alkanolamine hydroxides |
| KR102029127B1 (en) * | 2019-02-08 | 2019-10-07 | 영창케미칼 주식회사 | A new method for forming a silicon or silicon compound pattern in a semiconductor manufacturing process |
| CN114008539A (en) * | 2019-06-27 | 2022-02-01 | 花王株式会社 | Cleaning method |
| CN112764330B (en) * | 2021-01-08 | 2022-08-02 | 绵阳艾萨斯电子材料有限公司 | PFA photoresist regeneration stripping liquid and preparation method and application thereof |
| CN113437204A (en) * | 2021-05-18 | 2021-09-24 | 深圳市隆利科技股份有限公司 | Lamp panel preparation method |
| CN115475797B (en) * | 2022-09-30 | 2024-04-05 | 肇庆绿宝石电子科技股份有限公司 | Laminated capacitor and manufacturing method thereof, carrier strip cleaning liquid and preparation method thereof |
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Also Published As
| Publication number | Publication date |
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| JP6412377B2 (en) | 2018-10-24 |
| TW201516143A (en) | 2015-05-01 |
| CN104427781A (en) | 2015-03-18 |
| CN110225667A (en) | 2019-09-10 |
| CN110225667B (en) | 2023-01-10 |
| TWI647303B (en) | 2019-01-11 |
| KR20150030175A (en) | 2015-03-19 |
| JP2015079244A (en) | 2015-04-23 |
| KR102257405B1 (en) | 2021-05-27 |
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