CN102981379A - Cleaning agent composition for photoresist - Google Patents
Cleaning agent composition for photoresist Download PDFInfo
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- CN102981379A CN102981379A CN2012105540613A CN201210554061A CN102981379A CN 102981379 A CN102981379 A CN 102981379A CN 2012105540613 A CN2012105540613 A CN 2012105540613A CN 201210554061 A CN201210554061 A CN 201210554061A CN 102981379 A CN102981379 A CN 102981379A
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- photoresist
- aryl ether
- alkyl diol
- agent composition
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Abstract
The invention discloses a cleaning agent composition for a photoresist, which is composed of the following components in parts by weight: 5-15 parts of quaternary ammonium hydroxide, 10-15 parts of alkyl diol aryl ether, 11-15 parts of dimethyl sulfoxide, 5-16 parts of hexa-isopropylene glycol monophenyl ether, 4-13 parts of alkyl diol aryl ether, 2-8 parts of trihexyl citrate, 3-5 parts of chromic anhydride, 2-6 parts of copper oxide, 1-5 parts of titanium oxide, 3-7 parts of silicic acid, 4-9 parts of trichlorotrifluoroethane, 10-20 parts of methanol, and 20-25 parts of water. The cleaning agent composition for a photoresist disclosed by the invention has a cleaning capacity for the negative photoresist with a high crosslinking degree.
Description
Technical field
The present invention relates to a kind of cleansing composition.
Background technology
At present, cleansing composition mainly is comprised of highly basic, polar organic solvent and/or water etc., by immersing semiconductor wafer in the clean-out system or utilizing clean-out system flushing semiconductor wafer, removes the photoresist on the semiconductor wafer.
In order to improve hydrolysis and/or the dissolving power of the photoresist residue that clean-out system produces photoresist and/or etching, the water in the chemical is essential sometimes.But when liquid water content is too high, the removal scarce capacity of the photoresist residue that clean-out system produces photoresist and/or etching, and easily cause the corrosion of wafer pattern and base material.
The clean-out system that is comprised of hydramine and organic polar solvent has been proposed among the US4617251.Semiconductor wafer is immersed in this clean-out system, under 95 ℃, remove the positive photoresist on the wafer.But do not contain water in this clean-out system, and its cleansing power to negative photoresist is not enough.
In sum, existing clean-out system is not enough to the cleansing power of the higher photoresist of thickness, and perhaps the corrosivity to semiconductor wafer pattern and base material is stronger, has larger defective.
Summary of the invention
The invention provides a kind of to the photoresist cleansing power strong and lower to semiconductor wafer pattern and base material corrosivity, as to be beneficial to environmental protection cleansing composition.
The present invention solves the problems of the technologies described above the technical scheme that adopts: a kind of photoresist cleansing composition, component by following weight portion forms, quaternary ammonium hydroxide 5-15 part, alkyl diol aryl ether 10-15 part, dimethyl sulfoxide (DMSO) 11-15 part, six contracting Isopropanediol list phenyl ether 5-16 parts, alkyl diol aryl ether 4-13 part, THC 2-8 part, chromic anhybride 3-5 part, cupric oxide 2-6 part, titanium dioxide 1-5 part, silicic acid oil 3-7 part, trichorotrifluoroethane 4-9 part, methyl alcohol 10-20 part, 20-25 part.
Photoresist cleansing composition of the present invention can use (between 20～85 ℃) in wider temperature range.Cleaning method can be with reference to following steps: the semiconductor wafer that will contain photoresist immerses in the cleansing composition, utilizes constant temperature oscillator slowly to vibrate under 20～85 ℃, then dries up with high pure nitrogen after the deionized water washing.
Positive progressive effect of the present invention is:
Cleansing composition among the present invention has cleansing power to the negative photoresist of photoresist especially high-crosslinking-degree.
Embodiment
Embodiment 1
A kind of photoresist cleansing composition, component by following weight portion forms, 5 parts of quaternary ammonium hydroxides, 10 parts of alkyl diol aryl ether, 11 parts of dimethyl sulfoxide (DMSO)s, six 5 parts of contracting Isopropanediol list phenyl ethers, 4 parts of alkyl diol aryl ether, 2 parts of THCs, 3 parts of chromic anhybrides, 2 parts of cupric oxide, 1 part of titanium dioxide, 3 parts of silicic acid oil, 4 parts of trichorotrifluoroethanes, 10 parts, 20 parts of methyl alcohol.
Embodiment 2
A kind of photoresist cleansing composition, component by following weight portion forms, 15 parts of quaternary ammonium hydroxides, 15 parts of alkyl diol aryl ether, 15 parts of dimethyl sulfoxide (DMSO)s, six 16 parts of contracting Isopropanediol list phenyl ethers, 13 parts of alkyl diol aryl ether, 8 parts of THCs, 5 parts of chromic anhybrides, 6 parts of cupric oxide, 5 parts of titanium dioxide, 7 parts of silicic acid oil, 9 parts of trichorotrifluoroethanes, 20 parts, 25 parts of methyl alcohol.
Embodiment 3
A kind of photoresist cleansing composition, component by following weight portion forms, 8 parts of quaternary ammonium hydroxides, 13 parts of alkyl diol aryl ether, 14 parts of dimethyl sulfoxide (DMSO)s, six 9 parts of contracting Isopropanediol list phenyl ethers, 6 parts of alkyl diol aryl ether, 5 parts of THCs, 4 parts of chromic anhybrides, 3 parts of cupric oxide, 2 parts of titanium dioxide, 5 parts of silicic acid oil, 7 parts of trichorotrifluoroethanes, 15 parts, 22 parts of methyl alcohol.
Claims (1)
1. photoresist cleansing composition, it is characterized in that: the component by following weight portion forms, quaternary ammonium hydroxide 5-15 part, alkyl diol aryl ether 10-15 part, dimethyl sulfoxide (DMSO) 11-15 part, six contracting Isopropanediol list phenyl ether 5-16 parts, alkyl diol aryl ether 4-13 part, THC 2-8 part, chromic anhybride 3-5 part, cupric oxide 2-6 part, titanium dioxide 1-5 part, silicic acid oil 3-7 part, trichorotrifluoroethane 4-9 part, methyl alcohol 10-20 part, 20-25 part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105540613A CN102981379A (en) | 2012-12-19 | 2012-12-19 | Cleaning agent composition for photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105540613A CN102981379A (en) | 2012-12-19 | 2012-12-19 | Cleaning agent composition for photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102981379A true CN102981379A (en) | 2013-03-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105540613A Pending CN102981379A (en) | 2012-12-19 | 2012-12-19 | Cleaning agent composition for photoresist |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102981379A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110225667A (en) * | 2013-09-11 | 2019-09-10 | 花王株式会社 | The manufacturing method of resin mask layer detergent composition and circuit substrate |
| CN110824858A (en) * | 2018-08-14 | 2020-02-21 | 台湾积体电路制造股份有限公司 | Method for photolithography, method for manufacturing integrated circuit, and cleaning solution |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85105959A (en) * | 1984-07-25 | 1987-03-04 | 日本达克乐沙蒙陸股份有限公司 | The fluid composition that process metal surfaces is used |
| CN101339368A (en) * | 2007-07-06 | 2009-01-07 | 安集微电子（上海）有限公司 | Photoresist cleaning agent |
| CN102117022A (en) * | 2009-12-30 | 2011-07-06 | 安集微电子（上海）有限公司 | Photoresist detergent composition |
-
2012
- 2012-12-19 CN CN2012105540613A patent/CN102981379A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85105959A (en) * | 1984-07-25 | 1987-03-04 | 日本达克乐沙蒙陸股份有限公司 | The fluid composition that process metal surfaces is used |
| CN101339368A (en) * | 2007-07-06 | 2009-01-07 | 安集微电子（上海）有限公司 | Photoresist cleaning agent |
| CN102117022A (en) * | 2009-12-30 | 2011-07-06 | 安集微电子（上海）有限公司 | Photoresist detergent composition |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110225667A (en) * | 2013-09-11 | 2019-09-10 | 花王株式会社 | The manufacturing method of resin mask layer detergent composition and circuit substrate |
| CN110225667B (en) * | 2013-09-11 | 2023-01-10 | 花王株式会社 | Detergent composition for resin mask layer and method for manufacturing circuit board |
| CN110824858A (en) * | 2018-08-14 | 2020-02-21 | 台湾积体电路制造股份有限公司 | Method for photolithography, method for manufacturing integrated circuit, and cleaning solution |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130320 |