CN115475797B - Laminated capacitor and manufacturing method thereof, carrier strip cleaning liquid and preparation method thereof - Google Patents
Laminated capacitor and manufacturing method thereof, carrier strip cleaning liquid and preparation method thereof Download PDFInfo
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- CN115475797B CN115475797B CN202211213670.2A CN202211213670A CN115475797B CN 115475797 B CN115475797 B CN 115475797B CN 202211213670 A CN202211213670 A CN 202211213670A CN 115475797 B CN115475797 B CN 115475797B
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- 239000003990 capacitor Substances 0.000 title claims abstract description 117
- 238000004140 cleaning Methods 0.000 title claims abstract description 99
- 239000007788 liquid Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 68
- 239000002253 acid Substances 0.000 claims abstract description 61
- 239000000654 additive Substances 0.000 claims abstract description 49
- 230000000996 additive effect Effects 0.000 claims abstract description 49
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 35
- 238000003466 welding Methods 0.000 claims abstract description 29
- 238000012360 testing method Methods 0.000 claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 claims abstract description 23
- 238000005520 cutting process Methods 0.000 claims abstract description 18
- 230000032683 aging Effects 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 235000012431 wafers Nutrition 0.000 claims description 73
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 36
- -1 polyoxyethylene Polymers 0.000 claims description 26
- 125000000687 hydroquinonyl group Chemical class C1(O)=C(C=C(O)C=C1)* 0.000 claims description 24
- 229910019142 PO4 Inorganic materials 0.000 claims description 21
- 239000010452 phosphate Substances 0.000 claims description 21
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 18
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 16
- 125000004432 carbon atom Chemical group C* 0.000 claims description 16
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 16
- 239000000194 fatty acid Substances 0.000 claims description 16
- 229930195729 fatty acid Natural products 0.000 claims description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 229920000728 polyester Polymers 0.000 claims description 14
- 239000004593 Epoxy Substances 0.000 claims description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 13
- 229910017604 nitric acid Inorganic materials 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 150000002148 esters Chemical class 0.000 claims description 10
- 125000005313 fatty acid group Chemical group 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 2
- 239000011888 foil Substances 0.000 abstract description 32
- 229910052782 aluminium Inorganic materials 0.000 abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 48
- 238000003756 stirring Methods 0.000 description 31
- 239000000203 mixture Substances 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000012797 qualification Methods 0.000 description 9
- 238000005488 sandblasting Methods 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 150000003014 phosphoric acid esters Chemical class 0.000 description 5
- 150000004665 fatty acids Chemical class 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000006004 Quartz sand Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Abstract
The invention discloses a laminated capacitor and a manufacturing method thereof, a carrier strip cleaning solution and a preparation method thereof. The manufacturing method comprises the following steps: step1, preparing a carrier strip cleaning solution: the carrier strip cleaning liquid comprises the following raw materials in percentage by weight: 5 to 14 weight percent of inorganic strong acid, 75 to 84.2 weight percent of main solvent, 5 to 10 weight percent of auxiliary solvent, 0.3 to 2.5 weight percent of nonionic surfactant and 0.5 to 3.5 weight percent of additive; step2, cleaning the carrier strip; step3, welding the wafer; step4, stacking; step5, cutting: cutting off the anode end of the stacked body from the carrier strip to obtain a plurality of capacitor core groups; step6, connecting lead frames; step7, packaging and aging testing. The invention adopts the capacitor carrier strip cleaning liquid, which not only can effectively remove attachments on the carrier strip, improve the binding force between the foil (wafer anode end) and the carrier strip, reduce the shedding rate and the cost of the aluminum foil, and improve the service life of the carrier strip; in addition, the position of the foil welded to the carrier strip is accurate, so that the offset degree of the foil in the stacking process is reduced.
Description
Technical Field
The invention relates to the technical field of capacitors, in particular to a laminated capacitor, a manufacturing method thereof, a carrier strip cleaning solution and a preparation method thereof.
Background
The chip capacitor has extremely low Equivalent Series Resistance (ESR), good frequency and temperature characteristics and good ripple current resistance characteristics because the conductive plastic with extremely high conductivity is used as the electrolyte, and the conductivity is nearly ten thousand times that of the traditional liquid electrolyte. In addition, the chip capacitor has the performance advantages of large unit capacitance, environmental protection, safety and reliability.
The wafer capacitor plays an important role in solving the problems of small and thin size, lead removal, wider temperature range adaptation, and the like. In the manufacturing process of the wafer capacitor, the aluminum foil is welded on the carrier strip to finish the subsequent working sections, such as aluminum foil repair, conductive polymer coverage, conductive paste coverage, stacking and the like. In these sections, there are factors such as friction, vibration, touch, high pressure air, etc., and if the binding force between the foil and the carrier strip is insufficient, the foil will fall off. According to statistics, the shedding rate of the aluminum foil is about 7.6-20.9%, and huge resource waste is caused.
Therefore, how to reduce the peeling rate of the aluminum foil is an urgent technical problem to be solved in the process of manufacturing the wafer capacitor.
In the prior art, when the problem that an aluminum foil (namely an anode end) falls in the manufacturing process of a wafer capacitor is solved, a sand blasting process is mainly adopted for cleaning, wherein the sand blasting process is to accelerate abrasive materials such as steel grit, alumina, quartz sand, silicon carbide and the like under the action of high-pressure air and then spray the accelerated abrasive materials onto a carrier strip, and impurities, pollutants and attachments on the carrier strip are removed by utilizing the high-speed shearing force of the abrasive materials.
However, when the present inventors implemented the above-described technical means, it was found that: in the prior art, a sand blasting process is adopted to remove attachments on the carrier strips, and although the shedding rate of the aluminum foil can be reduced, the reduction amplitude is not obvious. The removal effect is not obvious because more dust pollution exists in the sand blasting process and the dust pollutes the carrier strip again; the problem of nozzle blockage occurs in the sand blasting process, so that the uniformity of removing attachments on the carrier strip is not ideal; furthermore, the cost of blasting is high. In addition, when the attachments on the carrier tapes are not completely removed, the positions of the foils welded to the carrier tapes deviate, so that the deviation degree of the stacking process is increased; the effective flow channel of the insulating glue is reduced during packaging, so that the extrusion impact of the insulating glue on the capacitor is increased, and the leakage current qualification rate of the capacitor is reduced.
Disclosure of Invention
The embodiment of the invention aims to solve the technical problem of providing a laminated capacitor, a manufacturing method thereof, a carrier strip cleaning solution and a preparation method thereof.
In order to solve the technical problems, the invention adopts the following technical scheme:
in a first aspect, a method of manufacturing a stacked capacitor includes the steps of:
step1, preparing a carrier strip cleaning solution: the carrier strip cleaning liquid comprises the following raw materials in percentage by weight: 5 to 14 weight percent of inorganic strong acid, 75 to 84.2 weight percent of main solvent, 5 to 10 weight percent of auxiliary solvent, 0.3 to 2.5 weight percent of nonionic surfactant and 0.5 to 3.5 weight percent of additive;
step2, cleaning the carrier strip: immersing the carrier strip into carrier strip cleaning liquid for cleaning, then cleaning by deionized water, and drying after cleaning;
step3, welding the wafer: welding anode ends of a plurality of wafers on one cleaned carrier strip at intervals of preset width to obtain a plurality of groups of carrier strip groups welded with the wafers;
step4, stacking: stacking a plurality of groups of carrier bar groups to form a stacked body, wherein the positions of the upper carrier bar and the lower carrier bar are aligned, the anode ends of the upper wafer and the lower wafer are aligned, and the cathode ends of the upper wafer and the lower wafer are aligned and bonded by adopting a conductive adhesive;
step5, cutting: cutting off the anode end of the stacked body from the carrier strip to obtain a plurality of capacitor core groups;
step6, connecting lead frames;
step7, packaging and aging testing.
As a preferred embodiment of the method for producing a multilayer capacitor according to the present invention, the strong inorganic acid is at least one selected from the group consisting of concentrated nitric acid having a concentration of 68wt% and concentrated sulfuric acid having a concentration of 78 wt%.
As a preferred embodiment of the method for producing a multilayer capacitor according to the present invention, the nonionic surfactant is selected from polyoxyethylene fatty acid esters having 12 to 18 carbon atoms.
As a preferred embodiment of the method for manufacturing a multilayer capacitor provided by the invention, the additive is at least one selected from hydroquinone derivatives, high phosphate polyesters, and epoxy phosphate esters.
In Step2, the temperature of the carrier bar cleaning solution is selected from 55 ℃ to 90 ℃, the time for immersing the carrier bar in the carrier bar cleaning solution is selected from 5 minutes to 60 minutes, and the deionized water cleaning is performed by running water.
In a second aspect, a multilayer capacitor is produced by any of the above-described production methods.
In a third aspect, a capacitor carrier strip cleaning solution is prepared from the following raw materials in percentage by weight: 5 to 14 weight percent of inorganic strong acid, 75 to 84.2 weight percent of main solvent, 5 to 10 weight percent of auxiliary solvent, 0.3 to 2.5 weight percent of nonionic surfactant and 0.5 to 3.5 weight percent of additive.
As a preferred embodiment of the capacitor carrier strip cleaning solution, the inorganic strong acid is at least one selected from concentrated nitric acid with a concentration of 68wt% and concentrated sulfuric acid with a concentration of 78 wt%.
As a preferred embodiment of the capacitor carrier strip cleaning solution of the present invention, the primary solvent is selected from water; the auxiliary solvent is selected from ethanol.
As a preferred embodiment of the capacitor carrier bar cleaning liquid of the present invention, the nonionic surfactant is selected from polyoxyethylene fatty acid esters having 12 to 18 carbon atoms.
As a preferred embodiment of the capacitor carrier strip cleaning liquid, the additive is at least one selected from hydroquinone derivatives, high phosphate polyesters and epoxy phosphate esters.
As a preferred embodiment of the capacitor carrier strip cleaning solution of the present invention, the Gao Linsuan ester polyester has an acid value of 45 to 65mgKOH/g.
The fourth aspect is a method for preparing the capacitor carrier strip cleaning solution, which is characterized by comprising the following steps:
(1) Preparing a first solution: adding inorganic strong acid into the main solvent under the stirring state, and continuing stirring after the inorganic strong acid is added;
(2) Preparing a second solution: adding an additive and a nonionic surfactant into the auxiliary solvent, and stirring after the addition;
(3) And (3) adding the second solution prepared in the step (2) into the first solution prepared in the step (1), and stirring after adding.
As a preferred embodiment of the preparation method of the capacitor carrier strip cleaning solution, the stirring time in the step (1) is 5-10 minutes.
As a preferred embodiment of the preparation method of the capacitor carrier strip cleaning solution, the stirring time in the step (2) is 5-15 minutes.
As a preferred embodiment of the preparation method of the capacitor carrier strip cleaning solution, the stirring time in the step (3) is 5-10 minutes.
Compared with the prior art, the embodiment of the invention has the following main beneficial effects:
the capacitor carrier bar cleaning liquid adopted by the invention not only can effectively remove attachments on the carrier bar, improve the binding force between the foil (wafer anode end) and the carrier bar, reduce the shedding rate and the cost of the aluminum foil, and prolong the service life of the carrier bar; in addition, the position of the foil welded on the carrier strip is accurate, so that the offset degree of the foil in the stacking process is reduced; the effective circulation channel of the insulating glue is increased during packaging, and the extrusion impact of the insulating glue on the capacitor is reduced, so that the leakage current qualification rate of the capacitor is improved.
Detailed Description
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs; the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention; the terms "comprising" and "having" and any variations thereof in the description and claims are intended to cover a non-exclusive inclusion. The terms first, second and the like in the description and in the claims, are used for distinguishing between different objects and not for describing a particular sequential order.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the invention. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
The present invention will be described in detail with reference to the following examples, which are only preferred embodiments of the present invention and are not limiting thereof.
Example 1
A method of manufacturing a stacked capacitor comprising the steps of:
step1, preparing a carrier strip cleaning solution: the carrier strip cleaning liquid comprises the following raw materials in percentage by weight: 5wt% of inorganic strong acid, 84.2wt% of main solvent, 10wt% of auxiliary solvent, 0.3wt% of nonionic surfactant and 0.5wt% of additive. Wherein the inorganic strong acid is selected from concentrated nitric acid with the concentration of 68 weight percent; the primary solvent is selected from water; the auxiliary solvent is selected from ethanol; the nonionic surfactant is selected from polyoxyethylene fatty acid esters containing 12 carbon atoms; the additive is selected from hydroquinone derivatives and high phosphate polyesters (preferably having an acid value of 55 mgKOH/g).
The preparation method of the capacitor carrier strip cleaning liquid comprises the following steps:
(1) Preparing a first solution: adding 68wt% concentrated inorganic strong acid into the main solvent water under stirring, and continuing stirring for 5 minutes after the inorganic strong acid is added; wherein, the weight percentage of water is 84.2wt% and the weight percentage of inorganic strong acid is 5wt%.
(2) Preparing a second solution: adding hydroquinone derivative additive, high phosphate ester polyester (acid value: 55 mgKOH/g) additive and polyoxyethylene fatty acid ester nonionic surfactant containing 12 carbon atoms into ethanol as auxiliary solvent, and stirring for 5 min; wherein, the weight percentage of ethanol is 10 percent, the weight percentage of the additive hydroquinone derivative is 0.2 percent, the weight percentage of the additive high phosphate polyester (acid value: 55 mgKOH/g) is 0.3 percent, and the weight percentage of the nonionic surfactant is 0.3 percent.
(3) And (3) adding the second solution prepared in the step (2) into the first solution prepared in the step (1), and stirring for 5 minutes after the addition.
Step2, cleaning the carrier strip: the capacitor carrier strip is immersed in Step1 carrier strip cleaning solution, cleaned for 60 minutes at 55 ℃, then cleaned by flowing deionized water, and dried for 15 minutes at 120 ℃ after the cleaning is completed.
Step3, welding the wafer: welding anode ends of a plurality of wafers on one cleaned carrier strip at intervals of preset width to obtain a plurality of groups of carrier strip groups welded with the wafers; each carrier bar group comprises a carrier bar and a plurality of wafers welded on the carrier bar.
Step4, stacking: stacking a plurality of groups of carrier bar groups to form a stacked body, wherein the positions of the upper carrier bar and the lower carrier bar are aligned, the anode ends of the upper wafer and the lower wafer are aligned, and the cathode ends of the upper wafer and the lower wafer are aligned and bonded by adopting a conductive adhesive; after stacking, high-temperature curing is carried out for a certain time; the conductive adhesive is selected from a mixture of conductive metal and resin; the elevated temperature is selected from 180 ℃ and the time is selected from 10 minutes.
Step5, cutting: cutting off the anode end of the stacked body from the carrier strip to obtain a plurality of capacitor core groups;
step6, lead frame connection: welding the anode end of the cut-off capacitor core group to the anode of the frame, electrically bonding the cathode end of the cut-off capacitor core group to the cathode of the frame, and then performing high-temperature curing for a certain time; the electrically bonding material is selected from a mixture of conductive metal and resin, the high temperature is selected from 180 ℃, and the certain time is selected from 10 minutes.
Step7, packaging and aging test:
insulating packaging the capacitor core group fixed on the lead frame, wherein the material of the insulating packaging is selected from a mixture of silicon dioxide and resin; and carrying out aging test on the packaged capacitor.
And (3) molding test: and bending the anode lead and the cathode lead of the aged capacitor to the bottom of the capacitor, and testing the electrical property of the formed capacitor.
Comparative example one
The carrier strip cleaning technology in the first embodiment is replaced by adopting the sand blasting technology, and the carrier strip after sand blasting is used for welding the aluminum foil in the manufacturing process of the wafer capacitor and counting the falling rate of the aluminum foil and the leakage current qualification rate of the capacitor.
Example two
A method of manufacturing a stacked capacitor comprising the steps of:
step1, preparing a carrier strip cleaning solution: the carrier strip cleaning liquid comprises the following raw materials in percentage by weight: 14wt% of inorganic strong acid, 75wt% of main solvent, 5wt% of auxiliary solvent, 2.5wt% of nonionic surfactant and 3.5wt% of additive. Wherein the inorganic strong acid is selected from concentrated sulfuric acid with concentration of 78 wt%; the primary solvent is selected from water; the auxiliary solvent is selected from ethanol; the nonionic surfactant is selected from fatty acid polyoxyethylene esters containing 18 carbon atoms; the additive is selected from hydroquinone derivatives and epoxy phosphate esters.
The preparation method of the capacitor carrier strip cleaning liquid comprises the following steps:
(1) Preparing a first solution: adding inorganic strong acid of concentrated sulfuric acid with concentration of 78wt% into main solvent water under stirring, and continuing stirring for 10 minutes after the inorganic strong acid is added; wherein, the weight percentage of water is 75wt% and the weight percentage of inorganic strong acid is 14wt%.
(2) Preparing a second solution: adding a hydroquinone derivative additive, an epoxy phosphate additive and a fatty acid polyoxyethylene ester nonionic surfactant containing 18 carbon atoms into an auxiliary solvent ethanol, and stirring for 15 minutes after the addition; wherein the weight percentage of ethanol is 5wt%, the weight percentage of the additive hydroquinone derivative is 1.5wt%, the weight percentage of the additive epoxy phosphate is 2wt%, and the weight percentage of the nonionic surfactant is 2.5wt%.
(3) And (3) adding the second solution prepared in the step (2) into the first solution prepared in the step (1), and stirring for 10 minutes after the addition.
Step2, cleaning the carrier strip: the capacitor carrier strip is immersed in Step1 carrier strip cleaning solution, cleaned for 15 minutes at 85 ℃, then cleaned by flowing deionized water, and dried for 15 minutes at 120 ℃ after the cleaning is completed.
Step3, welding the wafer: welding anode ends of a plurality of wafers on one cleaned carrier strip at intervals of preset width to obtain a plurality of groups of carrier strip groups welded with the wafers; each carrier bar group comprises a carrier bar and a plurality of wafers welded on the carrier bar.
Step4, stacking: stacking a plurality of groups of carrier bar groups to form a stacked body, wherein the positions of the upper carrier bar and the lower carrier bar are aligned, the anode ends of the upper wafer and the lower wafer are aligned, and the cathode ends of the upper wafer and the lower wafer are aligned and bonded by adopting a conductive adhesive; after stacking, high-temperature curing is carried out for a certain time; the conductive adhesive is selected from a mixture of conductive metal and resin; the elevated temperature is selected from 150 ℃ and the time is selected from 15 minutes.
Step5, cutting: cutting off the anode end of the stacked body from the carrier strip to obtain a plurality of capacitor core groups;
step6, lead frame connection: welding the anode end of the cut-off capacitor core group to the anode of the frame, electrically bonding the cathode end of the cut-off capacitor core group to the cathode of the frame, and then performing high-temperature curing for a certain time; the electrically bonding material is selected from a mixture of conductive metal and resin, the high temperature is selected from 180 ℃, and the certain time is selected from 10 minutes.
Step7, packaging and aging test:
insulating packaging the capacitor core group fixed on the lead frame, wherein the material of the insulating packaging is selected from a mixture of silicon dioxide and resin; and carrying out aging test on the packaged capacitor.
And (3) molding test: and bending the anode lead and the cathode lead of the aged capacitor to the bottom of the capacitor, and testing the electrical property of the formed capacitor.
Comparative example two
And cleaning the carrier strip by adopting a cleaning solution, wherein the cleaning solution consists of inorganic strong acid, a main solvent and an auxiliary solvent. Wherein the inorganic strong acid is concentrated sulfuric acid with the concentration of 78wt% and the weight percentage is 14wt%; the main solvent is water, and the weight percentage is 75 percent; the auxiliary solvent is ethanol, and the weight percentage is 11 percent. The cleaning solution is used for cleaning the carrier strip, and the cleaned carrier strip is used for welding the aluminum foil in the manufacturing process of the wafer capacitor and counting the falling rate of the aluminum foil and the leakage current qualification rate of the capacitor.
Example III
A method of manufacturing a stacked capacitor comprising the steps of:
step1, preparing a carrier strip cleaning solution: the carrier strip cleaning liquid comprises the following raw materials in percentage by weight: 9.5wt% of inorganic strong acid, 79.6wt% of main solvent, 7.5wt% of auxiliary solvent, 1.4wt% of nonionic surfactant and 2wt% of additive. Wherein the inorganic strong acid is selected from concentrated nitric acid with a concentration of 68 weight percent and concentrated sulfuric acid with a concentration of 78 weight percent; the primary solvent is selected from water; the auxiliary solvent is selected from ethanol; the nonionic surfactant is selected from fatty acid polyoxyethylene esters containing 15 carbon atoms; the additive is selected from hydroquinone derivatives and high phosphate polyesters (acid value: 50 mgKOH/g).
The preparation method of the capacitor carrier strip cleaning liquid comprises the following steps:
(1) Preparing a first solution: adding two inorganic strong acids, namely concentrated nitric acid with the concentration of 68 weight percent and concentrated sulfuric acid with the concentration of 78 weight percent, into main solvent water under the stirring state, and continuously stirring for 7.5 minutes after the inorganic strong acid is added; wherein, the weight percentage of water is 79.6wt%, the weight percentage of concentrated nitric acid with the concentration of 68wt% of inorganic strong acid is 2.5wt%, and the weight percentage of concentrated sulfuric acid with the concentration of 70wt% of inorganic strong acid is 7wt%.
(2) Preparing a second solution: adding hydroquinone derivative, high phosphate ester polyester (acid value: 50 mgKOH/g) additive and fatty acid polyoxyethylene ester nonionic surfactant containing 15 carbon atoms into auxiliary solvent ethanol, and stirring for 10 min; wherein, the weight percentage of ethanol is 7.5wt%, the weight percentage of the additive hydroquinone derivative is 1wt%, the weight percentage of the additive high phosphate polyester (acid value: 50 mgKOH/g) is 1wt%, and the weight percentage of the nonionic surfactant is 1.4wt%.
(3) And (3) adding the second solution prepared in the step (2) into the first solution prepared in the step (1), and stirring for 8 minutes after the addition.
Step2, cleaning the carrier strip: the capacitor carrier strip is immersed in Step1 carrier strip cleaning solution, cleaned for 30 minutes at 60 ℃, then cleaned by flowing deionized water, and dried for 15 minutes at 120 ℃ after the cleaning is completed.
Step3, welding the wafer: welding anode ends of a plurality of wafers on one cleaned carrier strip at intervals of preset width to obtain a plurality of groups of carrier strip groups welded with the wafers; each carrier bar group comprises a carrier bar and a plurality of wafers welded on the carrier bar.
Step4, stacking: stacking a plurality of groups of carrier bar groups to form a stacked body, wherein the positions of the upper carrier bar and the lower carrier bar are aligned, the anode ends of the upper wafer and the lower wafer are aligned, and the cathode ends of the upper wafer and the lower wafer are aligned and bonded by adopting a conductive adhesive; after stacking, high-temperature curing is carried out for a certain time; the conductive adhesive is selected from a mixture of conductive metal and resin; the elevated temperature is selected from 180 ℃ and the time is selected from 10 minutes.
Step5, cutting: cutting off the anode end of the stacked body from the carrier strip to obtain a plurality of capacitor core groups;
step6, lead frame connection: welding the anode end of the cut-off capacitor core group to the anode of the frame, electrically bonding the cathode end of the cut-off capacitor core group to the cathode of the frame, and then performing high-temperature curing for a certain time; the electrically bonding material is selected from a mixture of conductive metal and resin, the high temperature is selected from 150 ℃, and the certain time is selected from 20 minutes.
Step7, packaging and aging test:
insulating packaging the capacitor core group fixed on the lead frame, wherein the material of the insulating packaging is selected from a mixture of silicon dioxide and resin; and carrying out aging test on the packaged capacitor.
And (3) molding test: and bending the anode lead and the cathode lead of the aged capacitor to the bottom of the capacitor, and testing the electrical property of the formed capacitor.
Comparative example three
The carrier strip is cleaned by adopting cleaning liquid, and the cleaning liquid consists of inorganic strong acid, a main solvent, an auxiliary solvent and a nonionic surfactant. Wherein the weight percentage of the concentrated nitric acid with the concentration of 68 percent by weight of the inorganic strong acid is 2.5 percent by weight, and the weight percentage of the concentrated sulfuric acid with the concentration of 78 percent by weight of the inorganic strong acid is 7 percent by weight; the main solvent is water, and the weight percentage is 79.6 percent; the auxiliary solvent is ethanol, and the weight percentage is 7.5 percent; the nonionic surfactant is polyoxyethylene fatty acid ester containing 15 carbon atoms, and the weight percentage is 3.4 percent; the cleaning solution is used for cleaning the carrier strip, and the cleaned carrier strip is used for welding the aluminum foil in the manufacturing process of the wafer capacitor and counting the falling rate of the aluminum foil and the leakage current qualification rate of the capacitor.
Example IV
A method of manufacturing a stacked capacitor comprising the steps of:
step1, preparing a carrier strip cleaning solution: the carrier strip cleaning liquid comprises the following raw materials in percentage by weight: 7wt% of inorganic strong acid, 81wt% of main solvent, 9wt% of auxiliary solvent, 2wt% of nonionic surfactant and 1wt% of additive. Wherein the inorganic strong acid is selected from concentrated nitric acid with the concentration of 68 weight percent; the primary solvent is selected from water; the auxiliary solvent is selected from ethanol; the nonionic surfactant is selected from fatty acid polyoxyethylene esters containing 13 carbon atoms; the additive is selected from hydroquinone derivatives and epoxy phosphate esters.
The preparation method of the capacitor carrier strip cleaning liquid comprises the following steps:
(1) Preparing a first solution: adding 68wt% concentrated inorganic strong acid into the main solvent water under stirring, and continuing stirring for 6.5 minutes after the inorganic strong acid is added; wherein the weight percentage of water is 81wt% and the weight percentage of inorganic strong acid is 7wt%.
(2) Preparing a second solution: adding hydroquinone derivative, epoxy phosphate additive and fatty acid polyoxyethylene ester nonionic surfactant containing 13 carbon atoms into the auxiliary solvent ethanol, and stirring for 7.5 minutes; wherein the weight percentage of ethanol is 9wt%, the weight percentage of the additive hydroquinone derivative and the epoxy phosphate is 1wt%, and the weight percentage of the nonionic surfactant is 2wt%.
(3) And (3) adding the second solution prepared in the step (2) into the first solution prepared in the step (1), and stirring for 5 minutes after the addition.
Step2, cleaning the carrier strip: the capacitor carrier strip is immersed in Step1 carrier strip cleaning solution, cleaned for 40 minutes at 70 ℃, then cleaned by flowing deionized water, and dried for 15 minutes at 120 ℃ after cleaning.
Step3, welding the wafer: welding anode ends of a plurality of wafers on one cleaned carrier strip at intervals of preset width to obtain a plurality of groups of carrier strip groups welded with the wafers; each carrier bar group comprises a carrier bar and a plurality of wafers welded on the carrier bar.
Step4, stacking: stacking a plurality of groups of carrier bar groups to form a stacked body, wherein the positions of the upper carrier bar and the lower carrier bar are aligned, the anode ends of the upper wafer and the lower wafer are aligned, and the cathode ends of the upper wafer and the lower wafer are aligned and bonded by adopting a conductive adhesive; after stacking, high-temperature curing is carried out for a certain time; the conductive adhesive is selected from a mixture of conductive metal and resin; the elevated temperature is selected from 100 ℃ and the time is selected from 30 minutes.
Step5, cutting: cutting off the anode end of the stacked body from the carrier strip to obtain a plurality of capacitor core groups;
step6, lead frame connection: welding the anode end of the cut-off capacitor core group to the anode of the frame, electrically bonding the cathode end of the cut-off capacitor core group to the cathode of the frame, and then performing high-temperature curing for a certain time; the electrically bonding material is selected from a mixture of conductive metal and resin, the high temperature is selected from 180 ℃, and the certain time is selected from 10 minutes.
Step7, packaging and aging test:
insulating packaging the capacitor core group fixed on the lead frame, wherein the material of the insulating packaging is selected from a mixture of silicon dioxide and resin; and carrying out aging test on the packaged capacitor.
And (3) molding test: and bending the anode lead and the cathode lead of the aged capacitor to the bottom of the capacitor, and testing the electrical property of the formed capacitor.
Comparative example four
The carrier strip is cleaned by adopting cleaning liquid, and the cleaning liquid consists of inorganic strong acid, a main solvent, an auxiliary solvent and an additive. Wherein the inorganic strong acid is concentrated nitric acid with the concentration of 68 weight percent and the weight percent is 7 weight percent; the main solvent is water, and the weight percentage is 81 percent; the auxiliary solvent is ethanol, and the weight percentage is 9 percent; the additive is selected from hydroquinone derivatives, and the weight percentage is 3 percent; the cleaning solution is used for cleaning the carrier strip, and the cleaned carrier strip is used for welding the aluminum foil in the manufacturing process of the wafer capacitor and counting the falling rate of the aluminum foil and the leakage current qualification rate of the capacitor.
Example five
A method of manufacturing a stacked capacitor comprising the steps of:
step1, preparing a carrier strip cleaning solution: the carrier strip cleaning liquid comprises the following raw materials in percentage by weight: 11.5wt% of inorganic strong acid, 78.2wt% of main solvent, 6.5wt% of auxiliary solvent, 0.8wt% of nonionic surfactant and 3wt% of additive. Wherein the inorganic strong acid is selected from concentrated sulfuric acid with concentration of 78 wt%; the primary solvent is selected from water; the auxiliary solvent is selected from ethanol; the nonionic surfactant is selected from fatty acid polyoxyethylene esters containing 17 carbon atoms; the additive is selected from hydroquinone derivatives and epoxy phosphate esters.
The preparation method of the capacitor carrier strip cleaning liquid comprises the following steps:
(1) Preparing a first solution: adding inorganic strong acid of concentrated sulfuric acid with concentration of 78wt% into main solvent water under stirring, and continuing stirring for 9 minutes after the inorganic strong acid is added; wherein, the weight percentage of water is 78.2wt% and the weight percentage of inorganic strong acid is 11.5wt%.
(2) Preparing a second solution: adding a hydroquinone derivative additive, an epoxy phosphate additive and a fatty acid polyoxyethylene ester nonionic surfactant containing 17 carbon atoms into an auxiliary solvent ethanol, and stirring for 12.5 minutes; wherein the weight percentage of ethanol is 6.5wt%, the weight percentage of the additive hydroquinone derivative is 1.5wt%, the weight percentage of the additive epoxy phosphate is 1.5wt%, and the weight percentage of the nonionic surfactant is 0.8wt%.
(3) And (3) adding the second solution prepared in the step (2) into the first solution prepared in the step (1), and stirring for 5 minutes after the addition.
Step2, cleaning the carrier strip: the capacitor carrier strip is immersed in Step1 carrier strip cleaning solution, cleaned for 5 minutes at 90 ℃, then cleaned by flowing deionized water, and dried for 15 minutes at 120 ℃ after the cleaning is completed.
Step3, welding the wafer: welding anode ends of a plurality of wafers on one cleaned carrier strip at intervals of preset width to obtain a plurality of groups of carrier strip groups welded with the wafers; each carrier bar group comprises a carrier bar and a plurality of wafers welded on the carrier bar.
Step4, stacking: stacking a plurality of groups of carrier bar groups to form a stacked body, wherein the positions of the upper carrier bar and the lower carrier bar are aligned, the anode ends of the upper wafer and the lower wafer are aligned, and the cathode ends of the upper wafer and the lower wafer are aligned and bonded by adopting a conductive adhesive; after stacking, high-temperature curing is carried out for a certain time; the conductive adhesive is selected from a mixture of conductive metal and resin; the elevated temperature is selected from 200 ℃ and the time is selected from 5 minutes.
Step5, cutting: cutting off the anode end of the stacked body from the carrier strip to obtain a plurality of capacitor core groups;
step6, lead frame connection: welding the anode end of the cut-off capacitor core group to the anode of the frame, electrically bonding the cathode end of the cut-off capacitor core group to the cathode of the frame, and then performing high-temperature curing for a certain time; the electrically bonding material is selected from a mixture of conductive metal and resin, the high temperature is selected from 180 ℃, and the certain time is selected from 10 minutes.
Step7, packaging and aging test:
insulating packaging the capacitor core group fixed on the lead frame, wherein the material of the insulating packaging is selected from a mixture of silicon dioxide and resin; and carrying out aging test on the packaged capacitor.
And (3) molding test: and bending the anode lead and the cathode lead of the aged capacitor to the bottom of the capacitor, and testing the electrical property of the formed capacitor.
Comparative example five
The carrier strip is cleaned by adopting cleaning liquid, and the cleaning liquid consists of inorganic strong acid, a main solvent, an auxiliary solvent and an additive. Wherein the inorganic strong acid is concentrated sulfuric acid with the concentration of 78 weight percent and the weight percent is 11.5 weight percent; the main solvent is water, and the weight percentage is 78.2 percent; the auxiliary solvent is ethanol, and the weight percentage is 6.5 percent; 1.5 weight percent of hydroquinone derivative as an additive and 2.3 weight percent of epoxy phosphate as an additive; the cleaning solution is used for cleaning the carrier strip, and the cleaned carrier strip is used for welding the aluminum foil in the manufacturing process of the wafer capacitor and counting the falling rate of the aluminum foil and the leakage current qualification rate of the capacitor.
Example six
A method of manufacturing a stacked capacitor comprising the steps of:
step1, preparing a carrier strip cleaning solution: the carrier strip cleaning liquid comprises the following raw materials in percentage by weight: 9.5wt% of inorganic strong acid, 81.2wt% of main solvent, 6.5wt% of auxiliary solvent, 0.8wt% of nonionic surfactant and 2wt% of additive. Wherein the inorganic strong acid is selected from concentrated nitric acid with a concentration of 68 weight percent and concentrated sulfuric acid with a concentration of 78 weight percent; the primary solvent is selected from water; the auxiliary solvent is selected from ethanol; the nonionic surfactant is selected from polyoxyethylene fatty acid esters containing 12 carbon atoms; the additive is selected from hydroquinone derivatives and high phosphate polyesters (acid value: 45 mgKOH/g).
The preparation method of the capacitor carrier strip cleaning liquid comprises the following steps:
(1) Preparing a first solution: adding two inorganic strong acids, namely concentrated nitric acid with the concentration of 68 weight percent and concentrated sulfuric acid with the concentration of 78 weight percent, into main solvent water under the stirring state, and continuing stirring for 9 minutes after the inorganic strong acid is added; wherein the weight percentage of water is 81.2wt%, and the weight percentage of inorganic strong acid is 2.5wt% and 7wt% respectively.
(2) Preparing a second solution: adding hydroquinone derivative additive, high phosphate ester polyester (acid value: 45 mgKOH/g) additive and polyoxyethylene fatty acid ester nonionic surfactant containing 12 carbon atoms into ethanol as auxiliary solvent, and stirring for 7.5 min; wherein, the weight percentage of ethanol is 6.5wt%, the weight percentage of the additive hydroquinone derivative is 1wt%, the weight percentage of the additive high phosphate polyester (acid value: 45 mgKOH/g) is 1wt%, and the weight percentage of the nonionic surfactant is 0.8wt%.
(3) And (3) adding the second solution prepared in the step (2) into the first solution prepared in the step (1), and stirring for 7 minutes after the addition.
Step2, cleaning the carrier strip: the capacitor carrier strip is immersed in Step1 carrier strip cleaning solution, cleaned for 20 minutes at 80 ℃, then cleaned by flowing deionized water, and dried for 15 minutes at 120 ℃ after cleaning.
Step3, welding the wafer: welding anode ends of a plurality of wafers on one cleaned carrier strip at intervals of preset width to obtain a plurality of groups of carrier strip groups welded with the wafers; each carrier bar group comprises a carrier bar and a plurality of wafers welded on the carrier bar.
Step4, stacking: stacking a plurality of groups of carrier bar groups to form a stacked body, wherein the positions of the upper carrier bar and the lower carrier bar are aligned, the anode ends of the upper wafer and the lower wafer are aligned, and the cathode ends of the upper wafer and the lower wafer are aligned and bonded by adopting a conductive adhesive; after stacking, high-temperature curing is carried out for a certain time; the conductive adhesive is selected from a mixture of conductive metal and resin; the elevated temperature is selected from 180 ℃ and the time is selected from 10 minutes.
Step5, cutting: cutting off the anode end of the stacked body from the carrier strip to obtain a plurality of capacitor core groups;
step6, lead frame connection: welding the anode end of the cut-off capacitor core group to the anode of the frame, electrically bonding the cathode end of the cut-off capacitor core group to the cathode of the frame, and then performing high-temperature curing for a certain time; the electrically bonding material is selected from a mixture of conductive metal and resin, the high temperature is selected from 160 ℃, and the certain time is selected from 15 minutes.
Step7, packaging and aging test:
insulating packaging the capacitor core group fixed on the lead frame, wherein the material of the insulating packaging is selected from a mixture of silicon dioxide and resin; and carrying out aging test on the packaged capacitor.
And (3) molding test: and bending the anode lead and the cathode lead of the aged capacitor to the bottom of the capacitor, and testing the electrical property of the formed capacitor.
Comparative example six
The carrier strip is cleaned by adopting cleaning liquid, and the cleaning liquid consists of inorganic strong acid, a main solvent, an auxiliary solvent and an additive. Wherein the inorganic strong acid is selected from concentrated nitric acid with the concentration of 68wt% and concentrated sulfuric acid with the concentration of 78wt%, and the weight percentages are respectively 2.5wt% and 7wt%; the main solvent is water, and the weight percentage is 81.2 percent; the auxiliary solvent is ethanol, and the weight percentage is 6.5 percent; the weight percentage of the hydroquinone derivative as an additive is 1 percent by weight, and the weight percentage of the high phosphate polyester (acid value: 45 mgKOH/g) as an additive is 1.8 percent by weight; the cleaning solution is used for cleaning the carrier strip, and the cleaned carrier strip is used for welding the aluminum foil in the manufacturing process of the wafer capacitor and counting the falling rate of the aluminum foil and the leakage current qualification rate of the capacitor.
Comparative example seven
The procedure of example six was followed except that a polyethylene glycol type nonionic surfactant was used.
The technical effect comparison data of the above examples one to six and comparative examples one to seventh are shown in the following table:
| scheme for the production of a semiconductor device | Shedding rate of aluminum foil | Cost reduction | Number of times of carrier strip use | Leakage current yield/% |
| Example 1 | 1.8％ | 11.2％ | 12000 times | 97.3％ |
| Comparative example one | 10.6％ | 0.0％ | 7000 times | 91.8％ |
| Example two | 1.6％ | 10.3％ | 12500 times | 97.6％ |
| Comparative example two | 12.3％ | 0.0％ | 6800 times | 93.2％ |
| Example III | 0.9％ | 12.3％ | 12000 times | 98.5％ |
| Comparative example three | 9.7％ | 0.0％ | 7600 times | 92.8％ |
| Example IV | 1.5％ | 9.8％ | 13500 times | 98.9％ |
| Comparative example four | 8.8％ | 0.0％ | 7500 times | 92.7％ |
| Example five | 1.2％ | 10.1％ | 11500 times | 97.7％ |
| Comparative example five | 9.3％ | 0.0％ | 7000 times | 90.3％ |
| Example six | 0.7％ | 10.6％ | 13000 times | 98.3％ |
| Comparative example six | 9.4％ | 0.0％ | 7500 times | 93.1％ |
| Example seven | 8.9％ | 0.8％ | 7600 times | 92.7％ |
As can be seen from the table, the falling rate, cost, number of times of carrier bar use and leak current qualification rate of the aluminum foil foils of examples one to seven are obviously superior to those of comparative examples one to six.
It should be apparent that the embodiments described above are only some, but not all, embodiments of the invention and do not limit the scope of the invention. This invention may be embodied in many different forms, but rather, embodiments are provided in order to provide a thorough and complete understanding of the present disclosure. Although the invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing description, or equivalents may be substituted for elements thereof. All equivalent structures made by the content of the specification of the invention are directly or indirectly applied to other related technical fields, and are also within the scope of the invention.
Claims (3)
1. A method of manufacturing a multilayer capacitor, comprising the steps of:
step1, preparing a carrier strip cleaning solution: the carrier strip cleaning liquid comprises the following raw materials in percentage by weight: 5-14 wt% of inorganic strong acid, 75-84.2 wt% of main solvent, 5-10 wt% of auxiliary solvent, 0.3-2.5 wt% of nonionic surfactant and 0.5-3.5 wt% of additive; wherein the nonionic surfactant is selected from fatty acid polyoxyethylene esters containing 12-18 carbon atoms; the additive is at least one selected from hydroquinone derivatives, high phosphate polyester and epoxy phosphate; the inorganic strong acid is at least one of concentrated nitric acid with the concentration of 68 weight percent and concentrated sulfuric acid with the concentration of 78 weight percent;
step2, cleaning the carrier strip: immersing the carrier strip into carrier strip cleaning liquid for cleaning, then cleaning by deionized water, and drying after cleaning;
step3, welding the wafer: welding anode ends of a plurality of wafers on one cleaned carrier strip at intervals of preset width to obtain a plurality of groups of carrier strip groups welded with the wafers;
step4, stacking: stacking a plurality of groups of carrier bar groups to form a stacked body, wherein the positions of the upper carrier bar and the lower carrier bar are aligned, the anode ends of the upper wafer and the lower wafer are aligned, and the cathode ends of the upper wafer and the lower wafer are aligned and bonded by adopting a conductive adhesive;
step5, cutting: cutting off the anode end of the stacked body from the carrier strip to obtain a plurality of capacitor core groups;
step6, connecting lead frames;
step7, packaging and aging testing.
2. The method of manufacturing a stacked capacitor as claimed in claim 1, wherein in Step2, the carrier strip cleaning liquid is at a temperature selected from 55 ℃ to 90 ℃, the carrier strip is immersed in the carrier strip cleaning liquid for a period selected from 5 minutes to 60 minutes, and the deionized water cleaning is performed by running water.
3. A laminated capacitor, characterized in that it is manufactured by the manufacturing method according to any one of claims 1-2.
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| CN111283799A (en) * | 2018-12-07 | 2020-06-16 | 万润科技股份有限公司 | Cutter cleaning method and device and cutting equipment |
| CN110684602A (en) * | 2019-09-19 | 2020-01-14 | 江华飞信达科技有限公司 | LCD substrate cleaning agent and use method thereof |
| CN112331480A (en) * | 2020-11-06 | 2021-02-05 | 湖南容电电子科技有限公司 | Preparation method of multifunctional laminated aluminum electrolytic capacitor |
| CN112466869A (en) * | 2020-12-31 | 2021-03-09 | 江阴长电先进封装有限公司 | Packaging structure and packaging method of stacked wafers |
| CN114203563A (en) * | 2021-12-08 | 2022-03-18 | 通富微电子股份有限公司 | Multilayer stack memory packaging method and packaging structure |
| CN115064385A (en) * | 2022-04-18 | 2022-09-16 | 肇庆绿宝石电子科技股份有限公司 | Manufacturing method of chip capacitor, polymerization solution and polymerization method |
| CN114899010A (en) * | 2022-06-06 | 2022-08-12 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Capacitor and manufacturing method thereof |
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