CN104425678A - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
- Publication number
- CN104425678A CN104425678A CN201310383354.4A CN201310383354A CN104425678A CN 104425678 A CN104425678 A CN 104425678A CN 201310383354 A CN201310383354 A CN 201310383354A CN 104425678 A CN104425678 A CN 104425678A
- Authority
- CN
- China
- Prior art keywords
- fluorescent powder
- emitting diode
- packaging plastic
- light
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 58
- 238000004806 packaging method and process Methods 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000004033 plastic Substances 0.000 claims description 40
- 238000009826 distribution Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 238000007711 solidification Methods 0.000 claims description 8
- 230000008023 solidification Effects 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000002223 garnet Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract 8
- 230000001070 adhesive effect Effects 0.000 abstract 8
- 230000005389 magnetism Effects 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Provided is a manufacturing method for light emitting diodes (LED). The method comprises the following steps: a first step, providing an LED chip and packaging adhesive, the packaging adhesive being internally uniformly mixed with a plurality of fluorescent powders with magnetism, the packaging adhesive covering on the LED chip to form a packaging layer covering the LED chip; a second step, providing at least a magnet, before the packaging adhesive covering on the LED chip is solidified, placing at least a magnet correspondingly close to the external of the packaging adhesive, so that the plurality of fluorescent powder particles with magnetism are attracted to preset positions in the packaging adhesive through the magnetic force of the magnet, then solidifying the packaging adhesive, so that the fluorescent powder particles are concentratedly distributed in the preset positions in the packaging adhesive to form a fluorescent powder layer. The invention also relates to a light emitting diode manufactured by the above manufacturing method.
Description
Technical field
The present invention relates to a kind of light-emitting diode (LED) and manufacture method thereof.
Background technology
Using light-emitting diode (Light Emitting Diode, LED) as the light fixture of light source than traditional incandescent lamp power consumption minimizing ninety percent, not only energy-conservation but also environmental protection.The LED of prior art generally includes a LED chip and encapsulates an encapsulated layer of this LED chip.For improving the characteristics of luminescence of LED chip, usually fluorescent material can be set in the led.Fluorescent material can be blended in packaging plastic material before a packaging plastic, and can deposit due to the fluorescent material be suspended in during packaging plastic material solidification in packaging plastic material, thus cause the fluorescent material skewness in the packaging plastic after solidifying, thus affect the final light-out effect of LED.
Summary of the invention
In view of this, be necessary in fact to provide a kind of LED and the manufacture method thereof that effectively can prevent fluorescent material generation deposition.
A kind of manufacture method of light-emitting diode (LED), comprises the steps:
Step one, provides LED chip and packaging plastic, is evenly mixed with the magnetic fluorescent powder grain of multiple tool in this packaging plastic, is covered by packaging plastic and puts on LED chip to form the encapsulated layer of this LED chip coated;
Step 2, at least one magnet is provided, before covering the packaging plastic solidification of putting on LED chip, this at least one magnet correspondence is placed near this packaging plastic outside, make the magnetic fluorescent powder grain of described multiple tool by magnet by being drawn onto preposition in this packaging plastic under magneticaction, solidify described packaging plastic again, thus fluorescent powder grain integrated distribution this preposition in packaging plastic forms a phosphor powder layer.
A kind of light-emitting diode manufactured by above-mentioned manufacture method, comprise a LED chip, encapsulate an encapsulated layer of this LED chip and be arranged on the multiple fluorescent powder grains in this encapsulated layer, described fluorescent powder grain has magnetic, and the magnetic fluorescent powder grain of these tools integrated distribution in this encapsulated layer forms a phosphor powder layer.
In LED of the present invention, by the distribution of Magnetic control fluorescent powder grain, make fluorescent powder grain concentrate on the diverse location of encapsulated layer as required, prevent fluorescent powder grain to be deposited on bottom packaging plastic before packaging plastic solidification, ensure that LED has preferably light-out effect.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the LED of first embodiment of the invention.
Fig. 2 is the structural representation of a fluorescent powder grain in Fig. 1.
Fig. 3 and Fig. 4 is the schematic diagram of the manufacture method of the LED shown in Fig. 1.
Fig. 5 is the schematic diagram of the LED of second embodiment of the invention.
Fig. 6 is the schematic diagram of the manufacture method of the LED shown in Fig. 5.
Fig. 7 is the schematic diagram of the LED of third embodiment of the invention.
Fig. 8 is the schematic diagram of the manufacture method of the LED shown in Fig. 7.
Main element symbol description
| LED | 100、100a、100b |
| LED chip | 10 |
| Encapsulated layer | 20 |
| End face | 22 |
| Fluorescent powder grain | 30 |
| Band magnetic core | 32 |
| Fluorescence coating shell | 34 |
| Magnet | 40 |
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
As shown in Figure 1, be the LED 100 of first embodiment of the invention, they multiple fluorescent powder grains 30 comprising a LED chip 10, encapsulate an encapsulated layer 20 of this LED chip 10 and be arranged in this encapsulated layer 20.The plurality of fluorescent powder grain 30 has magnetic, and under the influence of a magnetic field, the magnetic fluorescent powder grain 30 of the plurality of tool integrated distribution in this encapsulated layer 20 forms a phosphor powder layer.
Referring to Fig. 2, this LED chip 10 is positioned at bottom this encapsulated layer 20, and the end face 22 of this encapsulated layer 20 is as the exiting surface of this LED 100.This encapsulated layer 20 is made up of silica gel (silicone) or epoxy resin (epoxy resin).Each fluorescent powder grain 30 is spherical in shape, comprises a fluorescence coating shell 34 of a band magnetic core 32 and this band magnetic core 32 coated.The material of this band magnetic core 32 is tri-iron tetroxide (Fe3O4).The material of this fluorescence coating shell 34 can be the compound of garnet (garnet) structure.In the present embodiment, the plurality of fluorescent powder grain 30 integrated distribution is in the bottom of this encapsulated layer 20.
Fig. 3 and Fig. 4 is the schematic diagram of the manufacture method of the LED 100 shown in Fig. 1.The manufacture method of this LED 100 comprises the steps:
Step one, provides LED chip 10 and packaging plastic, is evenly mixed with the magnetic fluorescent powder grain 30 of multiple tool in this packaging plastic, by packaging plastic point on this LED chip 10 to form the encapsulated layer 20 of this LED chip 10 coated;
Step 2, one magnet 40 is provided, before packaging plastic solidification, this magnet 40 is placed in bottom this packaging plastic, the magnetic fluorescent powder grain 30 of the plurality of tool is drawn onto bottom packaging plastic by this magnet 40, thus fluorescent powder grain 30 integrated distribution form a phosphor powder layer bottom packaging plastic.
As shown in Figure 5, be the LED 100a of second embodiment of the invention, they multiple fluorescent powder grains 30 comprising a LED chip 10, encapsulate an encapsulated layer 20 of this LED chip 10 and be arranged in this encapsulated layer 20.The plurality of fluorescent powder grain 30 has magnetic, and under the influence of a magnetic field, the magnetic fluorescent powder grain 30 of the plurality of tool integrated distribution in this encapsulated layer 20 forms a phosphor powder layer.
The difference of the LED 100a of the second embodiment and the LED 100 of the first embodiment is only: in a second embodiment, and the plurality of fluorescent powder grain 30 integrated distribution is at the top of this encapsulated layer 20 and near the exiting surface of LED 100a.
Fig. 6 is the schematic diagram of the manufacture method of the LED 100a shown in Fig. 5.In the manufacture method of this LED 100a and the first embodiment, the difference of the manufacture method of LED 100 is step 2, and the step 2 of the manufacture method of this LED 100a is:
Step 2, one magnet 40 is provided, before packaging plastic solidification, this magnet 40 is placed in this packaging plastic top, make the magnetic fluorescent powder grain 30 of the plurality of tool be drawn onto packaging plastic top by this magnet 40, thus fluorescent powder grain 30 integrated distribution form a phosphor powder layer at packaging plastic top.
As shown in Figure 7, be the LED 100b of third embodiment of the invention, they multiple fluorescent powder grains 30 comprising a LED chip 10, encapsulate an encapsulated layer 20 of this LED chip 10 and be arranged in this encapsulated layer 20.The plurality of fluorescent powder grain 30 has magnetic, and under the influence of a magnetic field, the magnetic fluorescent powder grain 30 of the plurality of tool integrated distribution in this encapsulated layer 20 forms a phosphor powder layer.
The difference of the LED 100b of the 3rd embodiment and the LED 100 of the first embodiment is only: in the third embodiment, and the plurality of fluorescent powder grain 30 integrated distribution is in the middle of this encapsulated layer 20.
Fig. 8 is the schematic diagram of the manufacture method of the LED 100b shown in Fig. 7.In the manufacture method of this LED 100b and the first embodiment, the difference of the manufacture method of LED 100 is step 2, and the step 2 of the manufacture method of this LED 100b is:
Step 2, two magnets 40 are provided, this two magnet 40 has identical magnetic force, before packaging plastic solidification, this two magnet 40 is placed in respectively top and the bottom of this packaging plastic, the magnetic fluorescent powder grain 30 of the plurality of tool is drawn onto in the middle of packaging plastic by this magnet 40, thus fluorescent powder grain 30 integrated distribution form a phosphor powder layer in the middle of packaging plastic.
In LED of the present invention, by the distribution of Magnetic control fluorescent powder grain 30, make fluorescent powder grain 30 concentrate on the diverse location of encapsulated layer 20 as required, prevent fluorescent powder grain 30 to be deposited on bottom packaging plastic before packaging plastic solidification, ensure that LED has preferably light-out effect.
Claims (9)
1. a manufacture method for light-emitting diode (LED), comprises the steps:
Step one, provides LED chip and packaging plastic, is evenly mixed with the magnetic fluorescent powder grain of multiple tool in this packaging plastic, is covered by packaging plastic and puts on LED chip to form the encapsulated layer of this LED chip coated;
Step 2, at least one magnet is provided, before covering the packaging plastic solidification of putting on LED chip, this at least one magnet correspondence is placed near this packaging plastic outside, make the magnetic fluorescent powder grain of described multiple tool by magnet by being drawn onto preposition in this packaging plastic under magneticaction, solidify described packaging plastic again, thus fluorescent powder grain integrated distribution this preposition in packaging plastic forms a phosphor powder layer.
2. the light-emitting diode manufactured by manufacture method according to claim 1, comprise a LED chip, encapsulate an encapsulated layer of this LED chip and be arranged on the multiple fluorescent powder grains in this encapsulated layer, it is characterized in that: described fluorescent powder grain has magnetic, the magnetic fluorescent powder grain of these tools integrated distribution in this encapsulated layer forms a phosphor powder layer.
3. light-emitting diode as claimed in claim 2, is characterized in that: each fluorescent powder grain is spherical in shape, comprises a fluorescence coating shell of a band magnetic core and this band magnetic core coated.
4. light-emitting diode as claimed in claim 3, is characterized in that: the material of this band magnetic core is tri-iron tetroxide.
5. light-emitting diode as claimed in claim 3, is characterized in that: the material of this fluorescence coating shell is the compound of garnet structure.
6. light-emitting diode as claimed in claim 2, is characterized in that: the plurality of fluorescent powder grain integrated distribution is in the bottom of this encapsulated layer.
7. light-emitting diode as claimed in claim 2, is characterized in that: the plurality of fluorescent powder grain integrated distribution is at the top of this encapsulated layer and near the exiting surface of this LED.
8. light-emitting diode as claimed in claim 2, is characterized in that: the plurality of fluorescent powder grain integrated distribution is in the middle of this encapsulated layer.
9. light-emitting diode as claimed in claim 2, is characterized in that: this encapsulated layer is made up of silica gel or epoxy resin.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310383354.4A CN104425678A (en) | 2013-08-29 | 2013-08-29 | Light emitting diode and manufacturing method thereof |
| TW102138348A TW201515284A (en) | 2013-08-29 | 2013-10-23 | LED and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310383354.4A CN104425678A (en) | 2013-08-29 | 2013-08-29 | Light emitting diode and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104425678A true CN104425678A (en) | 2015-03-18 |
Family
ID=52974132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310383354.4A Pending CN104425678A (en) | 2013-08-29 | 2013-08-29 | Light emitting diode and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104425678A (en) |
| TW (1) | TW201515284A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910426A (en) * | 2017-11-14 | 2018-04-13 | 广东金源照明科技股份有限公司 | A kind of magnetic fluorescence powder composite material and its flat coating method |
| CN108417696A (en) * | 2018-02-01 | 2018-08-17 | 广州硅能照明有限公司 | A kind of fluorescent powder painting method |
| CN108493318A (en) * | 2018-02-01 | 2018-09-04 | 广州硅能照明有限公司 | A kind of magnetic-particle and its LED component of making |
| CN109659298A (en) * | 2018-12-21 | 2019-04-19 | 鸿利智汇集团股份有限公司 | A kind of heavy powder magnetism light source and its technique |
| CN110797449A (en) * | 2019-11-05 | 2020-02-14 | 鸿利智汇集团股份有限公司 | LED package and packaging method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110108753A (en) * | 2010-03-29 | 2011-10-06 | 서울반도체 주식회사 | Phosphor blends and light emitting diode package having the phosphor blends and method for fabricating the same |
| CN102468405A (en) * | 2010-11-18 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulating structure and manufacturing method thereof |
| KR101290507B1 (en) * | 2012-06-04 | 2013-07-26 | 한국광기술원 | Method for fabricating light emitting diode package comprising magnetic phosphor and light emitting diode fabricated thereby |
-
2013
- 2013-08-29 CN CN201310383354.4A patent/CN104425678A/en active Pending
- 2013-10-23 TW TW102138348A patent/TW201515284A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110108753A (en) * | 2010-03-29 | 2011-10-06 | 서울반도체 주식회사 | Phosphor blends and light emitting diode package having the phosphor blends and method for fabricating the same |
| CN102468405A (en) * | 2010-11-18 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulating structure and manufacturing method thereof |
| KR101290507B1 (en) * | 2012-06-04 | 2013-07-26 | 한국광기술원 | Method for fabricating light emitting diode package comprising magnetic phosphor and light emitting diode fabricated thereby |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910426A (en) * | 2017-11-14 | 2018-04-13 | 广东金源照明科技股份有限公司 | A kind of magnetic fluorescence powder composite material and its flat coating method |
| WO2019095463A1 (en) * | 2017-11-14 | 2019-05-23 | 广东金源照明科技股份有限公司 | Magnetic fluorescent powder composite and plane coating method therefor |
| CN107910426B (en) * | 2017-11-14 | 2020-01-03 | 广东金源照明科技股份有限公司 | Magnetic fluorescent powder composite material and plane coating method thereof |
| CN108417696A (en) * | 2018-02-01 | 2018-08-17 | 广州硅能照明有限公司 | A kind of fluorescent powder painting method |
| CN108493318A (en) * | 2018-02-01 | 2018-09-04 | 广州硅能照明有限公司 | A kind of magnetic-particle and its LED component of making |
| CN109659298A (en) * | 2018-12-21 | 2019-04-19 | 鸿利智汇集团股份有限公司 | A kind of heavy powder magnetism light source and its technique |
| CN110797449A (en) * | 2019-11-05 | 2020-02-14 | 鸿利智汇集团股份有限公司 | LED package and packaging method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201515284A (en) | 2015-04-16 |
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Application publication date: 20150318 |